High-transmittance transparent conductive circuit and preparation method thereof

Abstract

The invention discloses a high-transmittance transparent conductive circuit and a preparation method thereof, the high-transmittance transparent conductive circuit comprises an electrode layer, two substrate layers and at least one anti-reflection layer; the electrode layer comprises a conductive circuit; the two base material layers are located at the upper end and the lower end of the electrode layer respectively. The at least one anti-reflection layer is located on the outer side of the at least one base material layer; and the anti-reflection layer is used for interfering the phase of the reflected light of the incident base material layer so as to reduce the reflectivity of the light. The invention has the advantages of interfering the phase of the reflected light of the incident substrate layer, reducing the intensity of the reflected light and improving the light transmittance.

Description

TECHNICAL FIELD

[0001] The present application belongs to the technical field of transparent conductive circuit products, and particularly relates to a high-transmittance transparent conductive circuit and a preparation method thereof. BACKGROUND

[0002] In application, a transparent conductive circuit product needs to prepare a conductive circuit on a transparent substrate. The preparation of the conductive circuit layer causes a reduction in transmittance, which affects the use effect. Especially when the demand for transparent conductive products is towards high electrical conductivity, the product manufacturing needs to increase the conductive cross-sectional area of the conductive material to improve the electrical conductivity, thereby causing further reduction in transmittance (the current general transmittance is 84% to 87%). In order to protect the transmittance, a high-transmittance transparent conductive circuit and a preparation method thereof are provided. SUMMARY

[0003] The present application aims to at least solve one of the technical problems existing in the prior art.

[0004] To this end, the present application provides a high-transmittance transparent conductive circuit and a preparation method thereof. The high-transmittance transparent conductive circuit has a phase of interfering reflected light of the incident substrate layer, reduces the reflected light intensity, and has the advantage of improving the transmittance.

[0005] The high-transmittance transparent conductive circuit according to an embodiment of the present application comprises: an electrode layer, two substrate layers and at least one antireflection layer; the electrode layer comprises a conductive circuit; the two substrate layers are respectively located at the upper and lower ends of the electrode layer; at least one antireflection layer is located on the outer side of at least one substrate layer; the antireflection layer is used to interfere with the phase of the reflected light of the incident substrate layer, so as to reduce the reflectivity of the light.

[0006] According to an embodiment of the present application, the antireflection layer comprises a high-refractive-index material layer and a low-refractive-index material layer, and the high-refractive-index material layer and the low-refractive-index material layer are stacked along the thickness direction of the conductive circuit.

[0007] According to an embodiment of the present application, the antireflection layer comprises at least one group of high-refractive-index material layers and low-refractive-index material layers; the high-refractive-index material layer is close to the substrate layer, and the low-refractive-index material layer is away from the substrate layer.

[0008] According to an embodiment of the present application, the material of the high-refractive-index material layer is one of ; preferably, the material of the high-refractive-index material layer is .

[0009] According to an embodiment of the present application, the material of the low-refractive-index material layer is one of ; preferably, the material of the low-refractive-index material layer is .

[0010] According to one embodiment of the present application, the antireflection layer comprises two groups of high refractive index material layers and low refractive index material layers, and the two groups of high refractive index material layers and low refractive index material layers are arranged alternately.

[0011] According to one embodiment of the present application, the conductive circuit is a high aspect ratio structure.

[0012] According to one embodiment of the present application, the electrode layer further comprises an antireflection layer and an oxidation resistance layer, and the antireflection layer and the oxidation resistance layer are arranged on the surface of the conductive circuit in sequence.

[0013] According to one embodiment of the present application, the electrode layer further comprises an adhesion layer, and the adhesion layer is arranged on the outer side of the conductive circuit to improve the connection firmness of the conductive circuit.

[0014] A preparation method of a high-transmittance transparent conductive circuit, used for preparing the high-transmittance transparent conductive circuit, comprises the following steps: S1. Preparing a high refractive index material layer and a low refractive index material layer on one side of at least one substrate layer in sequence; S2. Preparing an electrode layer on the other side of the substrate layer provided with the antireflection layer; S3. Arranging another substrate layer on the other side of the electrode layer.

[0015] The present application has the advantages that the antireflection layer is arranged on the outer side of the substrate to interfere with the phase of the reflected light of the substrate layer, improve the Neffel reflection light caused by the refractive index difference of the two materials when the light penetrates the interface between the two materials, reduce the penetration, form destructive interference between the multiple reflected lights when the incident light passes through the multiple interfaces, and effectively improve the light transmittance.

[0016] Other features and advantages of the present application will be described in the following description, and some will become apparent from the description, or will be understood from the practice of the present application.

[0017] In order to make the above-mentioned purposes, features and advantages of the present application more obvious and easy to understand, the following preferred embodiments are described in detail below, and the accompanying drawings are described as follows. BRIEF DESCRIPTION OF DRAWINGS

[0018] The above and / or additional aspects and advantages of the present application will become apparent and be readily appreciated from the following description, taken in conjunction with the following drawings in which: Figure 1 is a schematic diagram of the main structure of the present application; Figure 2 is a schematic diagram of the structure of the third embodiment of the present application; Figure 3 is a schematic diagram of the structure of the first embodiment of the present application; Figure 4 is a structural schematic diagram of embodiment two of the present application; Figure 5 is a transmittance and wavelength relationship diagram of embodiment one of the present application; Figure 6 is a transmittance and wavelength relationship diagram of embodiment two of the present application; Figure 7 is a transmittance and wavelength relationship diagram of embodiment three of the present application; Figure 8 is a transmittance and wavelength relationship diagram of a product not using the structure of the present application; Reference signs: 101, first anti-reflection layer; 1011, high refractive index material layer; 1012, low refractive index material layer; 102, first substrate layer; 103, electrode layer; 1031, organic structure layer; 1032, adhesion layer; 1033, sputtering layer; 1034, conductive circuit; 1035, anti-reflection layer; 1036, anti-oxidation layer; 104, optical glue layer; 105, second substrate layer; 106, second anti-reflection layer. DETAILED DESCRIPTION

[0019] Embodiments of the present application are described in detail below with reference to the accompanying drawings, examples of which are shown in the drawings, wherein the same or similar notations represent the same or similar elements or elements having the same or similar functions throughout. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain the present application, and cannot be understood as a limitation of the present application.

[0020] In the description of the present application, it should be understood that the terms "center", "longitudinal", "transverse", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential" and the like indicate the orientation or positional relationship based on the orientation or positional relationship shown in the drawings, and are only for the convenience of describing the present application and simplifying the description, and do not indicate or imply that the device or element referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as a limitation of the present application. In addition, the features defined as "first", "second" can explicitly or implicitly include one or more of the features. In the description of the present application, unless otherwise stated, the meaning of "a plurality of" is two or more.

[0021] In the description of this invention, it should be noted that, unless otherwise explicitly specified and limited, the terms "installation," "connection," and "linking" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection of two components. Those skilled in the art can understand the specific meaning of the above terms in this invention based on the specific circumstances.

[0022] The following describes in detail, with reference to the accompanying drawings, a high-transmittance transparent conductive circuit and its preparation method according to an embodiment of the present invention.

[0023] like Figures 1-8 As shown, a high-transmittance transparent conductive circuit according to an embodiment of the present invention includes: an electrode layer 103, two substrate layers, and at least one antireflection layer; the two substrate layers are a first substrate layer 102 and a second substrate layer 105, respectively; the electrode layer 103 includes conductive lines 1034; the first substrate layer 102 and the second substrate layer 105 are respectively located at the upper and lower ends of the electrode layer 103; at least one antireflection layer is located outside the at least one substrate layer. When there is one antireflection layer, the antireflection layer is located outside the first substrate layer 102 or the second substrate layer 105, that is, on the side away from the electrode layer 103; when there are two antireflection layers, the two antireflection layers are a first antireflection layer 101 and a second antireflection layer 106, respectively, and the first antireflection layer 101 and the second antireflection layer 106 are respectively located on the opposite sides of the first substrate layer 102 and the second substrate layer 105; the antireflection layer is used to interfere with the phase of the reflected light incident on the substrate layer to reduce the reflectivity of the light.

[0024] In this embodiment, by adding an antireflection layer, the phase of the reflected light incident on the substrate layer is interfered with, which improves the reduced transmittance caused by the Nefertory reflection (4%-6%) due to the difference in refractive index between the two materials when the light passes through the interface of the two materials (which can be understood as air and the substrate layer). This causes destructive interference between the multiple reflected lights generated when the incident light passes through the multi-layer interface, thereby reducing the intensity of the reflected light and effectively improving the transmittance to over 91%, thus enhancing the user experience.

[0025] The antireflective layer includes a high refractive index material layer 1011 and a low refractive index material layer 1012. The high refractive index material layer 1011 and the low refractive index material layer 1012 are stacked along the thickness direction of the conductive circuit, that is, the high refractive index material layer 1011 is close to the substrate layer and the low refractive index material layer 1012 is close to the air.

[0026] The antireflective layer includes at least one set of high refractive index material layer 1011 and low refractive index material layer 1012; the high refractive index material layer 1011 is close to the substrate layer, and the low refractive index material layer 1012 is far away from the substrate layer.

[0027] Preferably, the antireflection layer comprises two groups of high refractive index material layers 1011 and low refractive index material layers 1012, as shown in the following figure. Figures 2-4 As shown, the two groups of high refractive index material layers 1011 and low refractive index material layers 1012 are arranged alternately.

[0028] In this embodiment, the antireflection layer is formed by a multilayer structure stacked by high refractive index material layers 1011 and low refractive index material layers 1012 in an alternating manner. By using the principle of light wave interference, the intensity of reflected light is reduced by selecting specific refractive index materials (high / low) and controlling the thickness of each layer (less than half of the wavelength of incident light), so that destructive interference is formed between multiple reflected lights generated when the incident light passes through the multilayer interface.

[0029] The material of the high refractive index material layer 1011 is one of the following materials: TiO2, ZrO2, HfO2, Nb2O5, Ta2O5, SiO2, Al2O3, MgF2, CaF2, LaF3, YF3, CeF3, PrF3, NdF3, SmF3, EuF3, GdF3, TbF3, DyF3, HoF3, ErF3, TmF3, YbF3, LuF3, and BiF3. Preferably, the material of the high refractive index material layer 1011 is one of the following materials: TiO2, ZrO2, HfO2, Nb2O5, Ta2O5, SiO2, Al2O3, MgF2, CaF2, LaF3, YF3, CeF3, PrF3, NdF3, SmF3, EuF3, GdF3, TbF3, DyF3, HoF3, ErF3, TmF3, YbF3, LuF3, and BiF3. .

[0030] The material of the low refractive index material layer 1012 is one of the following materials: TiO2, ZrO2, HfO2, Nb2O5, Ta2O5, SiO2, Al2O3, MgF2, CaF2, LaF3, YF3, CeF3, PrF3, NdF3, SmF3, EuF3, GdF3, TbF3, DyF3, HoF3, ErF3, TmF3, YbF3, LuF3, and BiF3. Preferably, the material of the low refractive index material layer 1012 is one of the following materials: TiO2, ZrO2, HfO2, Nb2O5, Ta2O5, SiO2, Al2O3, MgF2, CaF2, LaF3, YF3, CeF3, PrF3, NdF3, SmF3, EuF3, GdF3, TbF3, DyF3, HoF3, ErF3, TmF3, YbF3, LuF3, and BiF3. .

[0031] The material of the first substrate layer 102 is one or more of the following materials: polyethylene terephthalate (PET), polyamide (PA), polyimide (PI), transparent polyimide (CPI), polymethyl methacrylate (PMMA), polycarbonate (PC), polyethylene naphthalate (PEN), optical glass, and high polymer material film. Preferably, the material of the first substrate layer 102 is polyethylene terephthalate (PET) or optical glass.

[0032] The material of the second substrate layer 105 is polycarbonate, cyclic olefin copolymer (COC), cyclic olefin polymer (COP), polymethyl methacrylate, and optical glass. Preferably, the material of the second substrate layer 105 is polycarbonate.

[0033] The conductive circuit 1034 is a high aspect ratio structure. That is, by increasing the depth of the conductive circuit 1034, the cross-sectional area of the conductive circuit 1034 is increased, which meets the demand for high conductivity while reducing or ensuring the opening rate in the light transmission direction. That is, from the front view, the width of the conductive circuit 1034 is reduced or maintained, so that the gap area between the conductive circuits 1034 is reduced or unchanged, thereby ensuring the light transmission area.

[0034] The electrode layer 103 further comprises an antireflection layer 1035 and an oxidation-resistant layer 1036, and the conductive circuit 1034 is recessed in the organic structure layer 1031, and the antireflection layer 1035 and the oxidation-resistant layer 1036 are arranged on the surface of the conductive circuit 1034 in sequence.

[0035] A method for preparing a high-transmittance transparent conductive circuit, for preparing the high-transmittance transparent conductive circuit as described above, comprising the following steps: S1. Preparing a high-refractive material layer 1011 and a low-refractive material layer 1012 on one side of at least one substrate layer in sequence; S2. Preparing an electrode layer 103 on the other side of a substrate layer provided with an anti-reflection layer; S3. Providing another substrate layer on the other side of the electrode layer 103.

[0036] Embodiment 1 As shown in Figure 3 , 5 , the high-transmittance transparent conductive circuit comprises: a first anti-reflection layer 101, a first substrate layer 102, an electrode layer 103, an optical adhesive layer 104, a second substrate layer 105, and a second anti-reflection layer 106; the first anti-reflection layer 101, the first substrate layer 102, the electrode layer 103, the optical adhesive layer 104, the second substrate layer 105, and the second anti-reflection layer 106 are arranged in sequence; and the electrode layer 103 further comprises an organic structure layer 1031, an adhesion layer 1032, a sputtering layer 1033, an anti-reflection layer 1035, and an anti-oxidation layer 1036.

[0037] The material of the organic structure layer 1031 is a mixture of one or more of perfluoropolyether block polyurethane acrylate, polyurethane, acrylate, polyethylene terephthalate, polyurethane acrylate, epoxy acrylate, vinyl ether epoxy resin, silicone, and prepolymer material, and is preferably acrylate or polyethylene terephthalate.

[0038] The material of the adhesion layer 1032 is a metal / non-metal oxide or nitride formed by one or more of nickel, chromium, copper, vanadium, titanium, and cobalt, and is preferably a nickel-chromium composite.

[0039] The material of the sputtering layer 1033 is formed by one of copper, silver, nickel, or a composite material thereof, and is preferably copper; The material of the conductive circuit 1034 is formed by one of copper, silver, nickel, or a composite material thereof, and is preferably copper; The material of the anti-reflection layer 1035 is a metal / non-metal oxide or nitride formed by one or more of nickel, chromium, copper, vanadium, and cobalt, and is preferably a copper-selenium composite or copper oxide; The material of the anti-oxidation layer 1036 is formed by one of benzotriazole, methyl benzotriazole, 1,2,4-triazole, 2-acetylamino-5-mercapto-1,3,4-thiadiazole, or a compound antioxidant thereof, and is preferably benzotriazole or methyl benzotriazole; The optical adhesive layer 104 is made of polyurethane acrylate, polyacrylic resin, or silicone resin, preferably polyurethane acrylate; The fabrication steps of this high-transmittance transparent conductive circuit are as follows: S01. Activate both sides of the first substrate layer 102 using a vacuum plasma surface treatment method; the process conditions are: power of 1-2KW, argon gas flow rate of 100-300sccm, and temperature of 100-180℃; the material of the first substrate layer 102 is polyethylene terephthalate; the thickness of the first substrate layer 102 is 12.5-500um, preferably 25-125um; S1. The substrate layer 102 is sequentially sputtered and deposited using a vacuum magnetron sputtering method on one side, with the material being... Furthermore, the high refractive index material layer 1011 with a refractive index of 2.4%-2.6% and the material being... A low-refractive-index material layer 1012 with a refractive index of 1.4%-1.5% is then repeatedly sputtered and deposited to deposit a material of... Furthermore, the high refractive index material layer 1011 with a refractive index of 2.4%-2.6% and the material being... The high-refractive-index material layer 1011 has a refractive index of 1.4%-1.5% and a low-refractive-index material layer 1012. The process conditions for the high-refractive-index material layer 1011 are: power of 0.8-1.5 kW, argon gas flow rate of 100-300 sccm, and time of 25-40 sec. The process conditions for the low-refractive-index material layer 1012 are: power of 0.4-1.2 kW, argon gas flow rate of 100-300 sccm, and time of 20-40 sec. The thickness of the high-refractive-index material layer 1011 is 20-200 nm, preferably 30-140 nm; the thickness of the low-refractive-index material layer 1012 is 20-100 nm, preferably 40-90 nm. S2. An electrode layer 103 is fabricated on the other side of a substrate layer on which an antireflection layer has been prepared: S21. On the other side of the first substrate layer 102, an organic structural layer material is coated using a syringe quantitative coating method; the organic structural layer material is polyacrylic resin; the process conditions are: syringe 23G, coating speed 1M / min, adhesive supply 5-10mL / min. S22. Using a mold with micron-sized protrusions, pressure is applied to cover the organic structure layer material, and ultraviolet light is used to cure and form the organic structure layer 1031; the process conditions are: pressure 3Kgf / cm², wavelength 365nm, time 25sec. S23. The mold is separated from the cured organic structure layer 1031 to form a groove on the organic structure layer 1031; the process conditions are: tension 1 kg, speed 2 M / min, angle 45; the thickness of the organic structure layer 1031 is 2-10 um, preferably 3-5 um; S24. A nickel-chromium compound is sputter-deposited on the surface of the groove by a vacuum magnetron sputtering method to form an adhesion layer 1032; the process conditions are: power 0.6-1.2 KW, argon gas flow rate 100-300 sccm, time 15-25 sec; the thickness of the adhesion layer 1032 is 10-100 nm, preferably 30-50 nm; S25. Copper is deposited on the adhesion layer 1032 by a vacuum magnetron sputtering method to form a sputtering layer 1033; the process conditions are: power 3-10 KW, argon gas flow rate 100-300 sccm, time 30-60 sec; the thickness of the sputtering layer 1033 is 5-100 nm, preferably 15-50 nm; S26. Copper is electroplated on the sputtering layer 1033 by a wet electroplating method to form a conductive circuit 1034; the process conditions are: voltage 2-6 V, current 200-420 A, electroplating time 10-15 min; the thickness of the conductive circuit 1034 is 1-10 um, preferably 2-5 um; S27. The surface of the organic structure layer 1031 is etched by a wet etching method to remove the adhesion layer 1032, the sputtering layer 1033 and the conductive circuit 1034 outside the groove; the process conditions are: pH 0-1, temperature 30-40 °C, etching time 10-15 min; S28. A selenium-copper compound is electroless plated on the conductive circuit 1034 by a wet electroless plating method to form an anti-reflection layer 1035; the process conditions are: pH 5-7, temperature 20-30 °C, etching time 50-90 sec; the thickness of the anti-reflection layer 1035 is 10-100 nm, preferably 20-60 nm; S29. Benzotriazole is electroless plated on the anti-reflection layer 1035 by a wet electroless plating method to form an anti-oxidation layer 1036; the process conditions are: pH 5-7, temperature 20-30 °C, etching time 50-90 sec; the thickness of the anti-oxidation layer 1036 is 10-100 nm, preferably 20-60 nm; S3. Another substrate layer is provided on the other side of the electrode layer 103: S31. Coating polyurethane acrylate on the upper surface of the organic structure layer 1031 by using slit coating method to form optical adhesive layer 104, and the optical adhesive layer 104 covers the antioxidant layer 1036; the process conditions are: coating speed 1M / min, glue supply amount 10-25mL / min; the thickness of the optical adhesive layer 104 is 100-300nm, preferably 150-250nm; S32. Attaching the second substrate layer 105 to the optical adhesive layer 104; the material of the second substrate layer 105 is polycarbonate; the process conditions are: attaching speed 2M / min; S33. Using the method of S1, depositing high refractive index material layer 1011 with a material of and a refractive index of 2.4%-2.6% and low refractive index material layer 1012 with a material of and a refractive index of 1.4%-1.5% on the second substrate layer 105; then repeating and sequentially sputtering and depositing high refractive index material layer 1011 with a material of and a refractive index of 2.4%-2.6% and low refractive index material layer 1012 with a material of and a refractive index of 1.4%-1.5%.

[0040] The high-transmittance transparent conductive circuit prepared by the above method can make the transmittance of visible light with a wavelength of 380-780nm be above 91%.

[0041] Example Two As shown in Figure 4 , 6 the difference between Example One and Example Two is that the optical adhesive layer 104 fills the electrode layer 103 to connect the first substrate layer 102 and the second substrate layer 105; and the optical adhesive layer 104 replaces the organic structure layer 1031.

[0042] The preparation steps of the high-transmittance transparent conductive circuit are different from Example One, which are as follows: Using steps S211-S219 to replace steps S21-S31, specifically: S211. Using vacuum magnetron sputtering method, sputtering and depositing nickel-chromium composite on the other side of the first substrate layer 102 to form the adhesion layer 1032; the process conditions are: power 0.6-1.2KW, argon gas flow rate 100-300sccm, time 15-25sec; S212. Using vacuum magnetron sputtering method to deposit copper on the adhesion layer 1032 to form the sputtering layer 1033; the process conditions are: power 3-10KW, argon gas flow rate 100-300sccm, time 30-60sec; S213. Attach the UV light sensitive adhesive film on the sputtered layer 1033 by vacuum lamination method; process conditions: pressure 0.1-0.3 kg / cm2, temperature 100-120 °C, time 10-20 sec; S214. Perform UV light pattern exposure on the UV light sensitive adhesive film, and then perform wet development to form the exposed opening structure adhesive layer outside the conductive circuit 1034; process conditions: UV light wavelength 365 nm, exposure energy 40-100 mJ, development pressure 0.5-1.0 kg / cm2, development temperature 23-24 °C, time 25-50 sec; S215. Deposit the conductive circuit 1034 of copper by wet plating method, and then remove the remaining UV light sensitive adhesive layer by wet stripping; process conditions: voltage 2-6 V, current 200-420 A, plating time 10-15 min, stripping pressure 0.8-1.2 kg / cm2, stripping time 90-120 sec; S216. Remove the exposed adhesive layer 1032 and sputtered layer 1033 between the conductive circuit 1034 structure by wet etching; process conditions: pH 0-0.1, temperature 30-40 °C, time 120-200 sec; S217. Deposit selenium copper compound on the surface of the conductive circuit 1034 by wet plating to form the anti-reflection layer 1035; process conditions: pH 5-7, temperature 20-30 °C, etching time 50-90 sec; S218. Deposit benzotriazole on the surface of the anti-reflection layer 1035 by wet plating to form the anti-oxidation layer 1036; process conditions: pH 5-7, temperature 20-30 °C, etching time 50-90 sec; S219. Apply polyurethane acrylate on the anti-oxidation layer 1036 and the first substrate layer 102 by slot coating method to form the optical adhesive layer 104; process conditions: coating speed 1 M / min, adhesive supply amount 10-25 mL / min; The high-transmittance transparent conductive circuit prepared by the above method has a transmittance of visible light with a wavelength of 380-780 nm of above 91%.

[0043] Example Three As shown in Figure 2 , 7 the difference between this example and Example One is that the electrode layer 103 does not include the adhesive layer 1032 and the sputtered layer 1033. The difference between the preparation steps of the high-transmittance transparent conductive circuit of this example and Example One is that: Step S2111 is used to replace steps S24-S27, specifically: S2111, a copper material is coated in the groove by using a doctor blade method to form a conductive circuit 1034; the process conditions are: a doctor blade speed of 1M / min, a pressure of 500gf, and a doctor blade hardness of 50-60 degrees.

[0044] The high-transmittance transparent conductive circuit prepared by the above method can make the transmittance of visible light with a wavelength of 380-780nm be above 91%.

[0045] In the description of the present specification, the description of the terms "one embodiment", "some embodiments", "exemplary embodiment", "example", "specific example", or "some examples" means that the specific features, structures, materials or characteristics described in connection with the embodiment or example are included in at least one embodiment or example of the present application. In the present specification, the exemplary description of the above terms does not necessarily mean the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described can be combined in any one or more embodiments or examples in a suitable manner.

[0046] Although the embodiments of the present application have been shown and described, those of ordinary skill in the art can understand that various changes, modifications, replacements and variations can be made to the embodiments without departing from the principles and spirit of the present application, and the scope of the present application is defined by the claims and their equivalents.

Claims

1. A high-transmittance transparent conductive circuit, characterized in that, include: Electrode layer (103), the electrode layer (103) includes conductive lines (1034); Two substrate layers are located at the upper and lower ends of the electrode layer (103), respectively. At least one antireflective layer, wherein at least one of the antireflective layers is located outside at least one substrate layer; The antireflection layer is used to interfere with the phase of the reflected light incident on the substrate layer, thereby reducing the reflectivity of the light.

2. The high-transmittance transparent conductive circuit according to claim 1, characterized in that, The antireflective layer includes a high refractive index material layer (1011) and a low refractive index material layer (1012), which are stacked along the thickness direction of the conductive circuit.

3. The high-transmittance transparent conductive circuit according to claim 2, characterized in that, The antireflective layer includes at least one set of high refractive index material layer (1011) and low refractive index material layer (1012); the high refractive index material layer (1011) is close to the substrate layer, and the low refractive index material layer (1012) is far away from the substrate layer.

4. The high-transmittance transparent conductive circuit according to claim 2, characterized in that, The high refractive index material layer (1011) is made of the following material: One of them.

5. The high-transmittance transparent conductive circuit according to claim 2, characterized in that, The material of the low-refractive-index layer (1012) is... One of them.

6. The high-transmittance transparent conductive circuit according to claim 5, characterized in that, The antireflective layer includes two sets of high refractive index material layers (1011) and low refractive index material layers (1012), which are interleaved.

7. The high-transmittance transparent conductive circuit according to claim 1, characterized in that, The conductive line (1034) has a high aspect ratio structure.

8. The high-transmittance transparent conductive circuit according to claim 7, characterized in that, The electrode layer (103) further includes an anti-reflection layer (1035) and an anti-oxidation layer (1036), which are sequentially disposed on the surface of the conductive line (1034).

9. The high-transmittance transparent conductive circuit according to claim 8, characterized in that, The electrode layer (103) also includes an adhesion layer (1032) located on the outside of the conductive line (1034) to improve the connection strength of the conductive line (1034).

10. A method for fabricating a high-transmittance transparent conductive circuit, used to fabricate the high-transmittance transparent conductive circuit as described in any one of claims 1-9, characterized in that, Includes the following steps: S1. A high refractive index material layer (1011) and a low refractive index material layer (1012) are sequentially prepared on one side of at least one substrate layer. S2. An electrode layer is prepared on the other side of a substrate layer with an antireflection layer (103). S3. Place another substrate layer on the other side of the electrode layer (103).

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