A method and system for preparing a sapphire-coated atomic gas cell

Abstract

The application relates to a preparation method and system of a sapphire-coated atom gas chamber, wherein the preparation method comprises the following steps: S1, placing a cleaned atom gas chamber on a heating base of a reaction chamber, and filling displacement gas into the reaction chamber to discharge residual gas therein; S2, filling aluminum source gas into the reaction chamber, and chemically adsorbing on the wall surface of the atom gas chamber to form a first film layer; S3, filling displacement gas into the reaction chamber to discharge residual aluminum source gas therein; S4, filling oxide gas into the reaction chamber to oxidize the first film layer and convert into an aluminum oxide film layer; S5, filling displacement gas into the reaction chamber to discharge residual oxide gas therein; and S6, repeating steps S2 to S5 to form an aluminum oxide film layer with a preset number of layers and a preset thickness on the wall surface of the atom gas chamber, so as to form the atom gas chamber with the sapphire-coated film. The application can enhance the shielding resistance of the alkali metal atom gas chamber and improve the electromagnetic wave precision measurement performance of the atom gas chamber.

Description

TECHNICAL FIELD

[0001] The present application relates to the field of quantum precision measurement, and in particular to a preparation method and system for a sapphire-coated atomic cell. BACKGROUND

[0002] Precision measurement technology based on quantum effects is widely used in physical parameter measurement systems such as time, electric field, magnetic field, and gravitational field. Currently, atomic clocks, atomic electric field meters, atomic magnetometers, quantum gravimeters, and other high-precision measurement devices have been successfully developed, greatly promoting the development of civil field technologies. For example, in the field of atomic electric field meters, electromagnetic information is obtained by using external electromagnetic waves to disturb the energy level of Rydberg atoms. The electric field measurement probe has the characteristics of size independence, high measurement sensitivity, and wide frequency band. In particular, for kHz signal measurement, the probe size can be reduced by 4-5 orders of magnitude compared to conventional antennas, and the sensitivity is expected to break through the thermal noise limit, which is very suitable for small-sized and high-sensitivity submarine communication applications and has great research value. Among them, the alkali metal atomic cell is the core physical device of the quantum precision measurement system. It is filled with alkali metal atomic vapor inside and can realize the preparation of highly excited atoms by laser driving, thereby realizing high-precision measurement of multiple magnetic fields, electric fields, optical fields, and gravitational fields, and supporting research work in the quantum field. In the field of electric field measurement, the atomic cell is the core physical element for electromagnetic sensing. Its packaging shell is usually made of high-boron silicon, quartz, and other materials, and is filled with alkali metal (such as cesium, rubidium) gas. When receiving low-frequency signals such as kHz and MHz, the adsorption effect between the inner wall of the cell and the atoms will have a static shielding effect on the signal, severely limiting the improvement of its receiving sensitivity. Currently, using sapphire material (Al2O3) to prepare the atomic cell is an effective way to solve the shielding effect of low-frequency signals, but due to the limitations of sapphire shell material preparation and packaging process, the atomic cell using sapphire material is still difficult to be widely applied. SUMMARY

[0003] The technical problem to be solved by the present application is to provide a preparation method and system for a sapphire-coated atomic cell.

[0004] To achieve the above-mentioned application purposes, the present application provides a preparation method for a sapphire-coated atomic cell, comprising the following steps:

[0005] S1. Place the cleaned atomic cell on the heating base of the reaction chamber, and fill the reaction chamber with displacement gas to remove the residual gas therein;

[0006] S2. Fill the reaction chamber with aluminum source gas, and based on atomic layer deposition technology, chemical adsorption occurs on the wall surface of the atomic cell to form a first film layer;

[0007] S3. Filling the reaction chamber with replacement gas to remove residual aluminum source gas therein;

[0008] S4. Filling the reaction chamber with oxide gas to oxidize the first film layer and convert it into an aluminum oxide film layer;

[0009] S5. Filling the reaction chamber with replacement gas to remove residual oxide gas therein;

[0010] S6. Repeating steps S2 to S5 to form aluminum oxide film layers of a preset number of layers and a preset thickness on the wall of the atomic chamber to form a sapphire-coated atomic chamber.

[0011] According to one aspect of the present application, further comprising:

[0012] S7. Taking out the atomic chamber and performing alkali metal charging.

[0013] According to one aspect of the present application, in step S1, the step of placing the cleaned atomic chamber on a heating base of the reaction chamber, the working temperature of the heating base is 250-300°C.

[0014] The gas inlet of the atomic chamber is arranged perpendicular to the gas inlet direction of the reaction chamber.

[0015] According to one aspect of the present application, in step S2, the step of filling the reaction chamber with aluminum source gas, an alternating pulse gas inlet mode is used to fill the reaction chamber with aluminum source gas; wherein the alternating pulse gas inlet mode used has a pulse gas inlet time greater than or equal to 10 min.

[0016] According to one aspect of the present application, in step S4, the step of filling the reaction chamber with oxide gas to oxidize the first film layer and convert it into an aluminum oxide film layer, the thickness of the aluminum oxide film layer is 0.1-0.2 nm.

[0017] According to one aspect of the present application, in step S7, the step of taking out the atomic chamber and performing alkali metal charging, comprising:

[0018] S71. Connecting an alkali metal source and at least one atomic chamber to the same gas charging pipeline;

[0019] S72. Based on the gas charging pipeline, vacuumizing the atomic chamber, and placing the atomic chamber, the alkali metal source, and at least part of the gas charging pipeline in a heating oven;

[0020] S73. opening the sealing structure between the alkali metal source and the gas-filled pipeline, and starting the heating oven to perform coating heating according to a preset heating scheme; wherein the preset heating scheme is: increasing the temperature from room temperature to 200 DEG C, the temperature increasing time is 1h, maintaining 200 DEG C for 2h, and decreasing the temperature from 200 DEG C to room temperature, the temperature decreasing time is 1h;

[0021] S74. after the heating oven completes the heating according to the preset heating scheme, removing the heating oven, and taking down the atomic gas chamber from the gas-filled pipeline after sealing the atomic gas chamber, completing the alkali metal charging of the atomic gas chamber.

[0022] According to an aspect of the present application, in step S72, the vacuum degree in the step of vacuumizing the atomic gas chamber based on the gas-filled pipeline is preferably higher than 10 -5 Pa.

[0023] According to an aspect of the present application, the atomic gas chamber is a high borosilicate glass gas chamber or a quartz material gas chamber;

[0024] The aluminum source gas is trimethylaluminum gas;

[0025] The oxide gas is deionized water vapor;

[0026] The alkali metal of the alkali metal source is cesium metal or rubidium metal.

[0027] To achieve the above-mentioned purposes, the present application provides a system applied to the preparation method of the sapphire coating atomic gas chamber, comprising: a coating unit;

[0028] The coating unit comprises: a reaction chamber with a heating base, a first pipeline connected with the reaction chamber, an aluminum source device, an oxide source device and a displacement gas source device connected with the first pipeline;

[0029] The reaction chamber comprises: a regular and hollow reaction chamber body, and a first aperture plate and a second aperture plate arranged at opposite ends of the reaction chamber body, respectively;

[0030] One end of the first pipeline is connected with the position where the first aperture plate is arranged on the reaction chamber body;

[0031] The first aperture plate has a plurality of first through holes penetrating through the body, and the diameters of some of the first through holes on the first aperture plate are different;

[0032] The second aperture plate has a plurality of second through holes penetrating through the body, and the diameters of some of the second through holes on the second aperture plate are different.

[0033] According to an aspect of the present application, further comprising: an alkali metal charging unit;

[0034] The alkali metal filling unit comprises a gas filling pipe, an alkali metal source, a heating oven and a vacuum pumping unit.

[0035] The gas filling pipe is partially arranged in the heating oven.

[0036] The alkali metal source is connected with the part of the gas filling pipe arranged in the heating oven.

[0037] The vacuum pumping unit is connected with the end of the gas filling pipe arranged outside the heating oven.

[0038] The heating oven comprises a hollow upper cover and a bottom plate.

[0039] The upper cover and the bottom plate are arranged openably and closably.

[0040] According to one scheme of the present application, the alkali metal atom gas chamber can effectively enhance the shielding resistance, and improve the electromagnetic wave precision measurement performance.

[0041] According to one scheme of the present application, the ALD atom gas chamber coating method based on the heterogeneous chamber flow field homogenization technology can precisely control the precursor gas flow rate and flow by using the porous baffle, and can realize the great improvement of the sapphire coating efficiency of the inner wall of the atom gas chamber by setting the working temperature of the heating base at 250-300 DEG C, so as to support the preparation of the low-cost, high-performance shielding-resistant atom gas chamber and the high-sensitivity measurement of the low-frequency electromagnetic signal, and promote the great development of the quantum precision measurement technology such as magnetic force measurement, electric field measurement and gravity field measurement.

[0042] According to one scheme of the present application, the porous baffle hole diameter is set as an unequal radius circular hole array, the precursor gas flow rate and flow can be precisely controlled, the gas can be extremely efficiently entered into the narrow entrance and the non-planar atom gas chamber, and the coating process is completed.

[0043] According to one scheme of the present application, the special designed non-uniform aperture array porous baffle is used to precisely control the precursor gas flow rate and flow, and improve the chemical adsorption capacity and medium film forming efficiency of the inner wall of the atom gas chamber.

[0044] According to one scheme of the present application, the sapphire coated atom gas chamber prepared by the scheme has the advantages of low cost, high shielding resistance and high sensitivity measurement of low-frequency electromagnetic signal. BRIEF DESCRIPTION OF DRAWINGS

[0045] Figure 1 The step block diagram of the preparation method of the sapphire coated atom gas chamber is an embodiment of the present application;

[0046] Figure 2 The structure block diagram of the coating unit is an embodiment of the present application;

[0047] Figure 3 A structure diagram of a first orifice plate according to an embodiment of the present application;

[0048] Figure 4 A simulation result diagram of a first orifice plate according to an embodiment of the present application, wherein, Figure 4 (a) is a gas pressure simulation result diagram of a first through-hole 112a of the first orifice plate 112, Figure 4 (b) is a gas flow rate simulation result diagram of the first through-hole 112a of the first orifice plate 112;

[0049] Figure 5 A combined configuration diagram of a first orifice plate according to an embodiment of the present application;

[0050] Figure 6 A structure diagram of a through-hole structure according to an embodiment of the present application;

[0051] Figure 7 A cross-sectional view of a through-hole structure according to an embodiment of the present application;

[0052] Figure 8 A structure diagram of a first ring-shaped elastic member and a second ring-shaped elastic member combination according to an embodiment of the present application;

[0053] Figure 9 A structure diagram of a first ring-shaped elastic member and a second ring-shaped elastic member combination according to another embodiment of the present application;

[0054] Figure 10 A structure diagram of a first ring-shaped elastic member according to an embodiment of the present application;

[0055] Figure 11 A structure diagram of a second ring-shaped elastic member according to an embodiment of the present application;

[0056] Figure 12 A structure diagram of a second orifice plate according to an embodiment of the present application;

[0057] Figure 13 A structure diagram of an alkali metal charging unit according to an embodiment of the present application.

[0058] In the drawings: 1 - coating unit, 11 - reaction chamber, 12 - first pipeline, 13 - aluminum source device, 14 - oxide source device, 15 - displacement gas source device, 111 - reaction chamber main body, 112 - first aperture plate, 113 - second aperture plate, 121 - horizontal pipeline part, 122 - vertical pipeline part, 112a - first through hole, 1121 - aperture plate main body, 1122 - through hole structure member, 1121a - structure member mounting position, 1122a - structure member outer cylinder body, 1122b - first annular elastic member, 1122c - second annular elastic member, 1122d - aperture diameter adjusting member, 1122b1 - first connecting ring, 1122b2 - first elastic plate, 1122c1 - second connecting ring, 1122c2 - second elastic plate, 113a - second through hole, 2 - alkali metal filling unit, 21 - filling pipeline, 22 - alkali metal source, 23 - heating oven, 231 - upper cover, 232 - bottom plate. DETAILED DESCRIPTION

[0059] In order to more clearly illustrate the technical solutions of the embodiments of the present application or the prior art, the drawings needed in the embodiments will be briefly introduced below. Obviously, the drawings in the following description are only some embodiments of the present application, and other drawings can also be obtained by those skilled in the art without creative labor based on these drawings.

[0060] In the description of the embodiments of the present application, the terms "longitudinal", "transverse", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer" express the orientation or positional relationship based on the orientation or positional relationship shown in the relevant drawings, which is only for the convenience of describing the present application and simplifying the description, and does not indicate or imply that the device or element referred to must have a particular orientation, be constructed and operated in a particular orientation, therefore the above terms cannot be understood as a limitation of the present application.

[0061] The present application will be described in detail below in conjunction with the drawings and specific embodiments, which cannot be described one by one here, but the embodiments of the present application are not limited to the following embodiments.

[0062] As Figure 1As shown, according to an embodiment of the present application, a method for preparing a sapphire-coated atom chamber, the present application utilizes atomic layer deposition (ALD) technology to prepare a sapphire material gas-phase precursor, which is injected into the atom chamber in an alternating pulse manner. The flow rate of each gas-phase precursor is regulated so that the sapphire material gas-phase precursor and the wall surface (mainly the inner wall) of the atom chamber generate an orderly, surface self-saturation chemical reaction. After the heating treatment in the reaction process, the sapphire material is stably attached. Then, the alkali metal atom is filled through a high-vacuum system, and after quantitative filling, the atom chamber is packaged, and the sapphire-coated atom chamber is finally prepared. Specifically, the method comprises the following steps:

[0063] S1. Place the cleaned atom chamber on the heating base of the reaction chamber, and fill the reaction chamber with displacement gas to discharge the residual gas therein;

[0064] S2. Fill the reaction chamber with an aluminum source gas, and based on the atomic layer deposition technology, chemical adsorption occurs on the wall surface of the atom chamber to form a first film layer;

[0065] S3. Fill the reaction chamber with displacement gas to discharge the residual aluminum source gas therein;

[0066] S4. Fill the reaction chamber with an oxide gas to oxidize the first film layer and convert it into an aluminum oxide film layer;

[0067] S5. Fill the reaction chamber with displacement gas to discharge the residual oxide gas therein;

[0068] S6. Repeat steps S2 to S5 to form an aluminum oxide film layer with a preset number of layers and a preset thickness on the wall surface of the atom chamber to form a sapphire-coated atom chamber.

[0069] According to an embodiment of the present application, the method for preparing a sapphire-coated atom chamber further comprises:

[0070] S7. Take out the atom chamber and fill it with alkali metal.

[0071] According to an embodiment of the present application, in step S1, the cleaned atom chamber is placed on the heating base of the reaction chamber. The atom chamber to be coated is cleaned with acetone, methanol, deionized water, etc. to ensure that the surface reaches a preset cleanliness, and then placed on the heating base of the reaction chamber after being dried and cleaned with a nitrogen gun. In this embodiment, the internal space of the reaction chamber is a pre-cleaned super-clean room to ensure that the wall surface of the atom chamber to be coated remains clean during the coating process.

[0072] In the embodiment, the atomic gas chamber can adopt a glass structure with an air inlet pipeline, which is usually made of high borosilicate or quartz, and is used to fill the alkali metal atomic gas after the film plating is completed.

[0073] Further, in step S1, the step of placing the cleaned atomic gas chamber on the heating base of the reaction chamber, the working temperature of the heating base is set to 250-300°C; based on the heating effect of the heating base, it provides effective guarantee for the stable and reliable adhesion of the sapphire material in the film plating process, so that the finished product effect of the present application is more optimal.

[0074] In the embodiment, when the atomic gas chamber is installed on the heating base, the air inlet of the atomic gas chamber is arranged perpendicular to the air inlet direction of the reaction chamber. Through the above arrangement, the air inlet direction of the atomic gas chamber is perpendicular to the air inlet direction of the reaction chamber, so as to fully avoid the direct flushing of the reaction chamber air to the inside of the atomic gas chamber. Thus, the gas flow can be uniformly filled into the atomic gas chamber in a diffusing manner to achieve the effect of uniform distribution on the surface of the atomic gas chamber. In addition, based on the above manner, the replacement speed of the previous gas in the reaction chamber is faster, and then the complete replacement of the previous gas in the reaction chamber is realized to achieve sufficient filling of the atomic gas chamber, which is more beneficial to avoid the influence of the previous gas.

[0075] Further, in step S1, the step of filling the replacement gas into the reaction chamber to discharge the residual gas therein, the replacement gas filled can adopt high-purity nitrogen, wherein the gas flow rate of the replacement gas is controlled to 300sccm for about 30 seconds, thereby realizing the complete removal of the residual gas in the reaction chamber, so that the entire reaction chamber is filled with replacement gas, and the influence of the residual gas on the subsequent film plating process can be effectively avoided, and the surface quality of the plated film layer is ensured.

[0076] According to an embodiment of the present application, in step S2, the step of filling the aluminum source gas into the reaction chamber, the aluminum source gas is filled into the reaction chamber by using an alternating pulse air inlet mode; wherein the aluminum source is trimethylaluminum (TMA, Al(CH3)3). In the embodiment, the aluminum source gas is filled at the same time as the replacement gas is input, so that the trimethylaluminum is input into the reaction chamber under the action of the replacement gas, and correspondingly, the aluminum source gas can be chemically adsorbed on the wall surface of the atomic gas chamber to form a single-sided first film layer (i.e. trimethylaluminum film layer). In the embodiment, in order to facilitate the aluminum source gas to be fully input into the atomic gas chamber, the inlet position of the atomic gas chamber can be arranged opposite to the input port of the aluminum source gas to achieve the effect of accurately filling the atomic gas chamber.

[0077] In the embodiment, in the step S2 of filling the reaction chamber with the aluminum source gas, the time of each pulse is greater than or equal to 10 min in the alternate pulse gas feeding mode. The above setting can effectively ensure the sufficient reaction of the reaction gas with the inner wall of the atomic gas chamber, so that the generated film layer is more compact and stable, and the performance of the atomic gas chamber is more favorable.

[0078] According to an embodiment of the present application, in the step S3 of filling the reaction chamber with the displacement gas to discharge the residual aluminum source gas in the reaction chamber, after the quantitative delivery of the aluminum source gas into the reaction chamber is completed, the delivery valve of the aluminum source gas is closed and the continuous input of the displacement gas is still maintained, so that the residual aluminum source gas in the reaction chamber can be discharged under the action of the displacement gas.

[0079] According to an embodiment of the present application, in the step S4 of filling the reaction chamber with the oxide gas to oxidize the first film layer and convert it into the aluminum oxide film layer, the thickness of the aluminum oxide film layer is 0.1 nm to 0.2 nm. In the embodiment, the oxide gas can use deionized water vapor (H2O), which is simultaneously fed with the displacement gas to be brought into the reaction chamber under the action of the displacement gas, so that the oxide gas can form a corresponding oxidation atmosphere around the first film layer to convert the first film layer into the aluminum oxide film layer under the action of the oxide gas.

[0080] According to an embodiment of the present application, in the step S5 of filling the reaction chamber with the displacement gas to discharge the residual oxide gas in the reaction chamber, after the quantitative delivery of the oxide gas into the reaction chamber is completed, the delivery valve of the oxide gas is closed and the continuous input of the displacement gas is still maintained, so that the residual oxide gas in the reaction chamber can be discharged under the action of the displacement gas.

[0081] According to an embodiment of the present application, in the step S6 of repeating the steps S2 to S5 to form the aluminum oxide film layers with the preset number of layers and the preset thickness on the wall surface of the atomic gas chamber, the preset number of layers on the wall surface of the atomic gas chamber can be determined according to the actual performance requirement, which will not be described herein. The preset thickness of each aluminum oxide film layer is also determined based on the actual performance requirement, wherein the plating time is increased to achieve the thicker preset thickness. Through the above setting, the actual plating thickness of each aluminum oxide film layer can be determined by the corresponding plating time, so that the present scheme can flexibly control the plating time according to different actual needs to achieve the plating of aluminum oxide film layers with any number of layers, which has excellent adaptability and scalability.

[0082] According to an embodiment of the present application, in the step S7 of taking out the atomic gas chamber and performing the alkali metal plating, the step includes:

[0083] S71. Connecting the alkali metal source and the at least one atomic cell to the same charging pipeline; wherein the alkali metal source is a glass structure with a gas outlet pipe, and the corresponding alkali metal is encapsulated in the alkali metal source in a pre-encapsulated manner, and the alkali metal in the alkali metal source is cesium metal (Cs) or rubidium metal (Rb). In this embodiment, a glass round pipe is used to fuse the closed end of the charging pipeline and the alkali metal source, and a movable iron block can be pre-arranged in the glass round pipe. Then, the iron block is lifted by a magnet outside the glass round pipe, and the magnet is removed to allow the iron block to freely fall in the glass round pipe to break the seal of the alkali metal source, thereby achieving the connection between the alkali metal source and the charging pipeline.

[0084] Correspondingly, the atomic cell is also connected to the charging pipeline by fusion; wherein the atomic cell is arranged along the length direction of the charging pipeline, so that different numbers of atomic cells can be connected based on the length of the charging pipeline.

[0085] S72. Vacuumizing the atomic cell based on the charging pipeline, and placing the atomic cell, the alkali metal source and at least part of the charging pipeline in a heating oven; in this embodiment, a vacuumizing device is used to remove the residual gas in the charging pipeline and the atomic cell, so that the vacuum degree of the connected charging pipeline and atomic cell is better than 10 -5 Pa.

[0086] S73. Opening the seal structure between the alkali metal source and the charging pipeline, and starting the heating oven to perform coating heating according to a preset heating scheme; in this embodiment, the seal structure is the closed port of the alkali metal source, so that the opening of the seal structure can be realized by the action of the magnet based on the movable iron block between the alkali metal source and the charging pipeline. In this embodiment, the heating schedule of the preset heating scheme is: from room temperature to 200°C, with a heating time of 1h; then maintain the temperature at 200°C for 2h; finally, from 200°C to room temperature, with a cooling time of 1h. In this embodiment, the heating process and the cooling process can be realized by linear processes respectively, so that the charging process is realized in a balanced manner, which is more beneficial to ensure the charging effect.

[0087] S74. After the heating oven completes the heating based on the preset heating scheme, remove the heating oven, and take down the atomic cell from the charging pipeline after sealing the atomic cell, to complete the alkali metal charging of the atomic cell.

[0088] As Figure 2As shown, according to an embodiment of the present application, the present application provides a system applied to the aforementioned method for preparing a sapphire-coated atom chamber, comprising: a coating unit 1; wherein the coating unit 1 functions to realize the formation of sapphire coating on the wall surface of the atom chamber; specifically, the coating unit 1 comprises: a reaction chamber 11 with a heating base, a first pipeline 12 connected with the reaction chamber 11, an aluminum source device 13, an oxide source device 14 and a displacement gas source device 15 connected with the first pipeline 12; in this embodiment, the reaction chamber 11 comprises: a regular and hollow reaction chamber body 111, and a first aperture plate 112 and a second aperture plate 113 respectively arranged at the opposite ends of the reaction chamber body 111; wherein the reaction chamber body 111 can be arranged as a hollow regular box body, and the whole can be arranged as a stainless steel box body to ensure that it has sufficient corrosion resistance and can effectively avoid the influence on the coating process. In addition, in order to facilitate the arrangement and installation of each structure, a box door that can be opened and closed can be arranged on the reaction chamber body 111, thereby facilitating the installation and disassembly of the atom chamber.

[0089] In this embodiment, the aluminum source device 13 is loaded with an aluminum source (i.e. trimethylaluminum (TMA) or the like); the oxide source device 14 is loaded with deionized water vapor; and the displacement gas source device 15 is loaded with high-purity nitrogen.

[0090] In this embodiment, the box walls at the opposite ends of the reaction chamber body 111 are provided with aperture plate mounting positions for arranging the first aperture plate 112 and the second aperture plate 113, wherein the first aperture plate 112 and the second aperture plate 113 are respectively detachably connected or fixedly connected with the aperture plate mounting positions, and a sealing member can be further used for sealing at the connection position to ensure the air tightness of the mounting position. In addition, the aperture plate mounting positions provided at the opposite ends of the reaction chamber body 111 are coaxially arranged, thereby enabling the first aperture plate 112 and the second aperture plate 113 to be coaxially arranged.

[0091] In this embodiment, one end of the first pipeline 12 is connected with the position where the first aperture plate 112 is arranged on the reaction chamber body 111; thereby the flow control of the conveying gas can be realized through the first aperture plate 112.

[0092] In the embodiment, the first pipeline 12 comprises a horizontal pipeline portion 121 and a vertical pipeline portion 122, wherein the horizontal pipeline portion 121 and the vertical pipeline portion 122 are connected in perpendicular to each other at the end portions, the end of the horizontal pipeline portion 121 away from the vertical pipeline portion 122 is connected with the first orifice plate 112, the end of the vertical pipeline portion 122 away from the horizontal pipeline portion 121 is closed, and the vertical pipeline portion 122 extends downward. In the embodiment, the position where the horizontal pipeline portion 121 and the vertical pipeline portion 122 are connected is connected in a circular arc transition manner to sufficiently ensure the smooth turning of the airflow direction, which is beneficial to improving the airflow conveying stability of the present application. In the embodiment, the first pipeline 12 is a circular cross-section pipeline and is made of stainless steel, so as to ensure that the first pipeline 12 has sufficient material stability to ensure the plating effect of the present application.

[0093] Further, to ensure the flexibility of the on-off control between the first pipeline 12 and the reaction chamber 11, a high-vacuum connection valve can be additionally installed on the horizontal pipeline portion 121 to realize the on-off control of the first pipeline 12.

[0094] In the embodiment, the aluminum source device 13, the oxide source device 14 and the replacement gas source device 15 are respectively connected with the vertical pipeline portion 122, wherein the aluminum source device 13, the oxide source device 14 and the replacement gas source device 15 are sequentially arranged from top to bottom, and the positions where the aluminum source device 13, the oxide source device 14 and the replacement gas source device 15 are connected with the vertical pipeline portion 122 are respectively provided with high-vacuum valves to realize the individual control of each gas source. In addition, the quantitative control of the output gas flow can also be realized based on the opening control of the high-vacuum valves. In the embodiment, the high-vacuum valves used can be electromagnetic control valves, which can make the control more accurate and sensitive, so that the film layer plating process of the present application is more accurate, and thus the plating film quality and precision formed are more optimal.

[0095] As Figure 3As shown, in the present embodiment, the first orifice plate 112 has a plurality of first through holes 112a penetrating through the body of the first orifice plate 112, and the aperture of the first through holes 112a on the first orifice plate 112 is different; wherein the first orifice plate 112 can be provided as a circular plate, and the aperture of the first through holes 112a in the first orifice plate 112 can be provided as three kinds, specifically, the first through holes 112a with the largest aperture can be provided as one, and it is arranged at the center position of the first orifice plate 112; the first through holes 112a with the second aperture can be provided as a plurality, and it can be arranged equidistantly along the circumference of the first orifice plate 112 around the first through holes 112a with the largest aperture, so as to realize the surrounding of the first through holes 112a with the second aperture to the first through holes 112a with the largest aperture; the first through holes 112a with the smallest aperture can be provided as a plurality, and it can be arranged equidistantly along the circumference of the first orifice plate 112 around the first through holes 112a with the second aperture, so as to realize the surrounding of the first through holes 112a with the smallest aperture to the first through holes 112a with the second aperture; further, due to the different opening areas of the first through holes 112a with three kinds of apertures, and then, from the center to the edge of the first orifice plate 112, the number of the first through holes 112a with different apertures can be realized gradually increasing, so as to realize the flexible control of the gas flow by the different first through holes 112a. Of course, the aperture of the first through holes 112a in the first orifice plate 112 can also be provided as four kinds, five kinds or more kinds, so as to realize the distribution of the first through holes 112a with different sizes, and along the direction from the center to the outer edge of the first orifice plate 112, the first through holes 112a are arranged based on the law of decreasing diameter and increasing number, so that the first orifice plate 112 of the present scheme has excellent flow control effect.

[0096] In the present embodiment, the first through holes 112a with the second aperture realize the annular equidistant array with the first circular ring; the first through holes 112a with the smallest aperture realize the annular equidistant array with the second circular ring; wherein the interval between the first circular ring and the center of the first through holes 112a with the largest aperture is the first interval, the interval between the first circular ring and the second circular ring is the second interval, and the first interval and the second interval are equal or provided as different. In the present embodiment, the first through holes 112a with the second aperture can be provided as 4, 6, 8 or more, and the first through holes 112a with the smallest aperture can be provided as 10, 12, 14, 16 or more.

[0097] In the present embodiment, the diameter of the first through hole 112a is at least 1 mm.

[0098] In the present embodiment, the distribution mode of the first orifice plate 112 and the first through holes 112a thereon is obtained based on the following steps; wherein taking the first through holes 112a with three kinds of apertures as an example, the specific steps include:

[0099] Carrying out fluid mechanics modeling simulation:

[0100] A three-dimensional model of the first aperture plate 112 is constructed, wherein two concentric circular rings are constructed on the first aperture plate 112, i.e. a first circular ring for arranging the first through holes 112a of the second aperture and a second circular ring for arranging the first through holes 112a of the minimum aperture; further, the first through holes 112a are arranged at the center position of the first aperture plate 112, the circumferential direction of the first circular ring and the circumferential direction of the second circular ring, respectively; specifically, the first through hole 112a at the center position is 1, the first through holes 112a on the first circular ring are 8, and the first through holes 112a on the third circular ring are 16. The initial diameter of each first through hole 112a is set to 1mm.

[0101] Gas flow analysis is performed:

[0102] The atomic gas chamber is placed in the collinear direction of the first aperture plate 112, the gas inlet of the atomic gas chamber is directed towards the first aperture plate 112 and is 100mm away from it, and the gas flow at the gas inlet is observed.

[0103] Optimization of the diameter of the first through hole 112a, the diameter of the first circular ring and the diameter of the second circular ring is performed:

[0104] The diameter of each first through hole 112a is kept unchanged, the diameters of the first circular ring and the second circular ring are sequentially combined and traversed within the range of 1mm-5mm, the gas flow at the gas inlet of the atomic gas chamber is measured, and after reaching the maximum value, the determination of the diameters of the first circular ring and the second circular ring is completed.

[0105] The diameters of the first through hole 112a at the center position of the first aperture plate 112, the first through hole 112a on the first circular ring and the first through hole 112a on the second circular ring are sequentially combined and traversed within the range of 1mm-5mm while keeping the diameters of the first circular ring and the second circular ring unchanged, the gas flow at the gas inlet of the atomic gas chamber is measured, and after reaching the maximum value, the determination of the diameter of the first through hole 112a is completed.

[0106] The simulation results after completing the gas flow analysis are shown in Figure 4 .

[0107] The first aperture plate 112 is prepared and tested:

[0108] The first aperture plate 112 is prepared and installed at the corresponding position of the reaction chamber 11 for nitrogen flow testing, the effect is judged by the flow meter, if the flow does not reach the preset condition, the previous arrangement is re-executed to optimize the arrangement position and distribution rule of the first through holes 112a thereon, so as to further optimize the first aperture plate 112.

[0109] As shown in Figure 5As shown, in order to facilitate the test preparation of the first aperture plate 112, the first aperture plate 112 is arranged in a combined configuration to facilitate the efficiency in the repeated test process. Specifically, the first aperture plate 112 includes: an aperture plate body 1121 and a plurality of adjustable-aperture through-hole structural members 1122; wherein the aperture plate body 1121 is provided with a plurality of structural member mounting positions 1121a penetrating the body, and the distribution mode of the structural member mounting positions 1121a is set based on the distribution law determined in the modeling simulation process; wherein the size of each structural member mounting position 1121a is consistent to facilitate the machining consistency and reusability of the aperture plate body 1121, and to meet the repeated use under the condition of the same aperture distribution mode but different aperture distribution, thereby effectively improving the use convenience of the present scheme.

[0110] In the present embodiment, the aperture plate body 1121 can be made of stainless steel.

[0111] Further, the through-hole structural member 1122 has a hollow part to form the first through-hole 112a, and the radial size of the hollow part is adjustable, thereby realizing the accurate adjustment of the output port diameter of the first through-hole 112a, and realizing the accurate fine adjustment of the possible difference between the actual effect and the simulation effect, and realizing the precise control of the precursor gas flow rate and the stable and uniform distribution of the precursor gas input. Figure 6 and Figure 7As shown, in the embodiment, the through-hole structure 1122 comprises a structure outer cylinder 1122a, a first annular elastic member 1122b, a second annular elastic member 1122c and a hole diameter adjusting member 1122d; wherein the structure outer cylinder 1122a is a hollow cylinder with both ends open, and the structure outer cylinder 1122a, the first annular elastic member 1122b and the second annular elastic member 1122c are connected in sequence from outside to inside in the radial direction of the through-hole structure 1122; wherein the end of the structure outer cylinder 1122a facing the first pipeline 12 is defined as the inlet end, and the end of the structure outer cylinder 1122a away from the first pipeline 12 is defined as the outlet end, and then the first end of the first annular elastic member 1122b is fixed coaxially inside the inlet end of the structure outer cylinder 1122a, and the first end of the second annular elastic member 1122c is fixed coaxially inside the first end of the first annular elastic member 1122b; further, the second end of the first annular elastic member 1122b is radially spaced from the outlet end of the structure outer cylinder 1122a, and thus the hole diameter adjusting member 1122d can be arranged between the second end of the first annular elastic member 1122b and the outlet end of the structure outer cylinder 1122a. In the embodiment, the hole diameter adjusting member 1122d is in a ring structure, and the structure outer cylinder 1122a and the hole diameter adjusting member 1122d are connected by threads, and thus based on the abutting of the inside of the hole diameter adjusting member 1122d and the outside of the first annular elastic member 1122b, the position of the hole diameter adjusting member 1122d can be adjusted along the direction from the outlet end to the inlet end of the structure outer cylinder 1122a, so that the second end of the first annular elastic member 1122b is pressed against the second end of the second annular elastic member 1122c radially inward, thereby reducing the outlet diameter of the first through-hole 112a composed of the combination of the second end of the first annular elastic member 1122b and the second end of the second annular elastic member 1122c, and vice versa, by rotating the hole diameter adjusting member 1122d to move in the opposite direction, the outlet diameter of the first through-hole 112a can be controlled to be larger, and based on this control mode, the outlet diameter of the first through-hole 112a can be more flexibly and accurately controlled to achieve precise control of the flow and match the simulation effect.

[0112] In the embodiment, the outer side of the structural member outer cylinder 1122a can be set as a cylindrical surface or a conical surface, and the inner side of the structural member outer cylinder 1122a is a cylindrical surface to facilitate the installation of each structure. When the outer side of the structural member outer cylinder 1122a is set as a straight cylinder, the outer side is connected to the structural member installation site 1121a by a matching connection structure (such as a thread). When the outer side of the structural member outer cylinder 1122a is set as a conical cylinder, the inner side of the structural member installation site 1121a is also a conical surface, and the structural member outer cylinder 1122a is self-positioned and installed based on the matching of the outer side and the inner side of the structural member installation site 1121a, which facilitates the accurate installation of the through-hole structural member 1122 and ensures the air tightness of the installation position, and also facilitates the disassembly when replacing.

[0113] In the embodiment, when the outer side of the structural member outer cylinder 1122a is set as a conical cylinder, the inlet end of the structural member outer cylinder 1122a is a large-diameter end, which determines the installation direction of the through-hole structural member 1122 and makes it more stable in use, effectively avoiding disengagement caused by airflow.

[0114] In the embodiment, at the inlet end of the structural member outer cylinder 1122a, an annular connecting piece for installing the end of the first annular elastic member 1122b is arranged on the inner side of the inlet end to facilitate the installation of the first annular elastic member 1122b. The annular connecting piece and the first annular elastic member 1122b can be coaxially connected by nesting installation, and can be fixed by welding, bonding, or the like at the connection position. Of course, to position and abut the first annular elastic member 1122b and the second annular elastic member 1122c in the axial direction, the inner annular surface of the annular connecting piece can be set as a stepped surface to achieve the positioning effect based on the stepped structure, and the height of the step is the same as the total thickness of the first annular elastic member 1122b and the second annular elastic member 1122c to achieve flush at the connection position.

[0115] As shown in Figure 7 In the embodiment, the first end of the second annular elastic member 1122c and the first end of the first annular elastic member 1122b are also installed in a nested manner, and are fixed by welding or bonding at the installation position to effectively ensure the tightness of the installation.

[0116] In the embodiment, the structural member outer cylinder 1122a, the first annular elastic member 1122b, the second annular elastic member 1122c, and the aperture adjusting member 1122d are all made of stainless steel to ensure the stability of their material properties.

[0117] In combination with Figure 7 and Figure 8As shown, according to an embodiment of the present application, the first annular elastic member 1122b comprises: a first connecting ring 1122b1 arranged at the first end of the first annular elastic member 1122b, and a first elastic plate 1122b2 arranged on the first connecting ring 1122b1; wherein the first elastic plate 1122b2 is a long strip plate with a circular arc cross section, and a plurality of first elastic plates 1122b2 are arranged at equal intervals along the circumferential direction of the first connecting ring 1122b1. In this embodiment, the radial thickness of the first elastic plate 1122b2 gradually increases in the direction close to the first connecting ring 1122b1, and the radial inner side of the first elastic plate 1122b2 is a cylindrical surface portion with the same diameter as the inner ring surface of the first connecting ring 1122b1, and the radial outer side of the first elastic plate 1122b2 is a conical surface portion of a truncated cone.

[0118] In combination Figure 7 and Figure 8 As shown, according to an embodiment of the present application, the second annular elastic member 1122c comprises: a second connecting ring 1122c1 arranged at the first end of the second annular elastic member 1122c, and a second elastic plate 1122c2 arranged on the second connecting ring 1122c1; wherein the second elastic plate 1122c2 is a long strip plate with a circular arc cross section, and a plurality of second elastic plates 1122c2 are arranged at equal intervals along the circumferential direction of the second connecting ring 1122c1. In this embodiment, the radial thickness of the second elastic plate 1122c2 is consistent in the direction close to the second connecting ring 1122c1, and thus the radial inner side of the second elastic plate 1122c2 is a cylindrical surface portion with the same diameter as the inner ring surface of the second connecting ring 1122c1, and the radial outer side of the second elastic plate 1122c2 is a cylindrical surface portion parallel to the radial inner side of the second elastic plate 1122c2.

[0119] In combination Figure 7 and Figure 8As shown, according to an embodiment of the present application, when the second elastic plate 1122c2 and the first annular elastic member 1122b are nested with each other, the second elastic plate 1122c2 and the first elastic plate 1122b2 are arranged in a staggered manner, so that the second elastic plate 1122c2 blocks the space between adjacent first elastic plates 1122b2, and the first elastic plate 1122b2 can also block the space between adjacent second elastic plates 1122c2. Thus, by fixing the first end of the first annular elastic member 1122b and the first end of the second annular elastic member 1122c to each other, a side wall closed annular cylinder can be formed. Since the first elastic plate 1122b2 and the second elastic plate 1122c2 only have abutting contact, during the axial movement of the aperture adjusting member 1122d along the first annular elastic member 1122b, the first elastic plate 1122b2 can be compressed and pressed by the abutting action based on the change in the radial thickness of the first elastic plate 1122b2. Thus, based on the force transmission of the first elastic plate 1122b2, the second elastic plate 1122c2 can be elastically compressed, and the size of the outlet opening of the structure member outer cylinder 1122a can be continuously and flexibly adjusted.

[0120] In combination Figure 7 and Figure 8 As shown, according to an embodiment of the present application, on the second annular elastic member 1122c, and in the direction away from the second connecting ring 1122c1, the space between adjacent second elastic plates 1122c2 can gradually increase. Thus, by arranging the larger space, it is effectively ensured that there is enough space for movement between adjacent second elastic plates 1122c2 when the outlet opening diameter is reduced, so as to effectively avoid interference between them.

[0121] In this embodiment, in order to avoid the influence of the step position caused by the direct stacking of the first elastic plate 1122b2 and the second elastic plate 1122c2 on the aperture size precision, the thickness of the second elastic plate 1122c2 can be reduced to improve the aperture size precision, so as to achieve accurate and effective flow control. Moreover, by reducing the thickness of the second elastic plate 1122c2, the second elastic plate 1122c2 can have better elasticity and be more easily driven by the first elastic plate 1122b2, thereby effectively improving the convenience of the driving and adjusting process.

[0122] In combination Figure 9 , Figure 10 and Figure 11As shown, in another embodiment, in order to reduce the influence of the thickness of the second elastic plate 1122c2 on the caliber size accuracy, a receiving groove for receiving the second elastic plate 1122c2 can also be arranged on the adjacent first elastic plate 1122b2, so that the second elastic plate 1122c2 can be arranged in the receiving groove to shield the interval between the adjacent first elastic plates 1122b2, and the mechanical seal between the mutual connecting positions can also be realized based on the mutual cooperation between the mechanical structures in this way of adopting the concave cavities to be stacked on each other, so as to effectively ensure the overall sealing performance of the first annular elastic member 1122b and the second annular elastic member 1122c when the caliber changes.

[0123] In the embodiment, in order to avoid the mutual interference between the structures during the caliber change, a certain gap can be arranged at the mutually cooperating positions to realize that it has a sufficient caliber change range, for example, the interval between the adjacent receiving grooves on the same first elastic plate 1122b2 is smaller than the interval between the adjacent second elastic plates 1122c2, so as to facilitate the movement of the second elastic plate 1122c2.

[0124] In this way, the thickness of the second elastic plate 1122c2 can be more flexibly adjusted to realize the flexible adjustment of the elasticity, so that the present scheme has better use flexibility.

[0125] As shown in the drawings, Figure 7 According to an embodiment of the present application, the caliber adjusting member 1122d can be arranged as an annular structure, the inner ring surface of which can be arranged as a conical surface, and the end with the smallest diameter of the inner ring surface can realize the control of the maximum caliber of the combination of the first annular elastic member 1122b and the second annular elastic member 1122c, and then based on the abutting of the end with the smallest diameter of the inner ring surface of the caliber adjusting member 1122d and the outer surface of the first annular elastic member 1122b, the caliber of the combination of the first annular elastic member 1122b and the second annular elastic member 1122c can be controlled as the caliber adjusting member 1122d moves.

[0126] As shown in the drawings, Figure 12As shown, in the present embodiment, the second aperture plate 113 has a plurality of second through holes 113a penetrating through the body of the second aperture plate 113, and the aperture diameters of the second through holes 113a on the second aperture plate 113 are different. In the present embodiment, the second aperture plate 113 can be configured as a circular plate, and the aperture diameters of the second through holes 113a in the second aperture plate 113 can be configured as three types. Specifically, the second through holes 113a with the largest aperture diameter can be configured as one, and arranged at the center of the second aperture plate 113. The second through holes 113a with the second aperture diameter can be configured as a plurality, and arranged at equal intervals along the circumference of the second aperture plate 113 around the second through holes 113a with the largest aperture diameter, so as to realize the surrounding of the second through holes 113a with the second aperture diameter to the second through holes 113a with the largest aperture diameter. The second through holes 113a with the smallest aperture diameter can be configured as a plurality, and arranged at equal intervals along the circumference of the second aperture plate 113 around the second through holes 113a with the second aperture diameter, so as to realize the surrounding of the second through holes 113a with the smallest aperture diameter to the second through holes 113a with the second aperture diameter. Further, due to the different opening areas of the second through holes 113a with the three types of aperture diameters, the number of the second through holes 113a with different aperture diameters can be gradually increased from the center to the edge of the second aperture plate 113, so as to realize the flexible control of the gas flow by the different second through holes 113a.

[0127] In the present embodiment, the second through holes 113a with the second aperture diameter are arranged in a circular ring to realize a circular array at equal intervals, and the second through holes 113a with the smallest aperture diameter are arranged in a second circular ring to realize a circular array at equal intervals. In the present embodiment, the first circular ring and the center of the second through holes 113a with the largest aperture diameter are spaced apart by a first interval, and the first circular ring and the second circular ring are spaced apart by a second interval. The first interval and the second interval can be equal or different.

[0128] In the present embodiment, the diameter of the second through holes 113a is at least 1 mm.

[0129] In the present embodiment, the second aperture plate 113 is obtained based on the following steps; which includes:

[0130] Carrying out fluid mechanics modeling simulation:

[0131] A three-dimensional model of the second aperture plate 113 is constructed, wherein two concentric circles are constructed on the second aperture plate 113, that is, a first circular ring for arranging the second through holes 113a of the second aperture, and a second circular ring for arranging the second through holes 113a of the minimum aperture; further, the second through holes 113a are arranged at the center position of the second aperture plate 113, the circumferential direction of the first circular ring, and the circumferential direction of the second circular ring, respectively; specifically, the second through hole 113a at the center position is 1, the second through hole 113a on the first circular ring is 8, and the second through hole 113a on the third circular ring is 16. The initial diameter of each second through hole 113a is set to 1mm.

[0132] Gas flow analysis is performed:

[0133] Place the atomic gas chamber in the collinear direction of the second aperture plate 113, with the gas inlet of the atomic gas chamber facing the second aperture plate 113 and being 100mm away from it, and observe the gas flow at the gas inlet.

[0134] Optimization of the diameter of the second through hole 113a, the diameter of the first circular ring, and the diameter of the second circular ring is performed:

[0135] Ensure that the diameter of each second through hole 113a remains unchanged, and the diameters of the first circular ring and the second circular ring are sequentially combined and traversed within the range of 1mm to 5mm, the gas flow at the gas inlet of the atomic gas chamber is measured, and after reaching the maximum value, the determination of the diameters of the first circular ring and the second circular ring is completed.

[0136] Ensure that the diameters of the first circular ring and the second circular ring remain unchanged, and the diameters of the second through hole 113a at the center position of the second aperture plate 113, the second through hole 113a on the first circular ring, and the second through hole 113a on the second circular ring are sequentially combined and traversed within the range of 1mm to 5mm, the gas flow at the gas inlet of the atomic gas chamber is measured, and after reaching the maximum value, the determination of the diameter of the second through hole 113a is completed.

[0137] When the parameters are set the same as the first aperture plate 112 described above, the simulation results after gas flow analysis are as shown in Figure 4 .

[0138] The second aperture plate 113 is prepared and experiments are performed:

[0139] The second aperture plate 113 is prepared and installed at the corresponding position of the reaction chamber 11 for nitrogen flow testing, the effect is judged by the flow meter, if the flow does not reach the preset condition, the previous arrangement is re-executed to optimize the arrangement position and distribution rule of the second through hole 113a thereon, to further optimize the second aperture plate 113.

[0140] In the embodiment, the second through holes 113a in the second aperture plate 113 are at least partially open during the plating process of the atom chamber, so that the controlled discharge of the gas during the process of filling the gas into the reaction chamber can be achieved through the open openings, effectively ensuring the sufficient plating of the atom chamber wall surface.

[0141] In the embodiment, the heating base provided in the reaction chamber 11 can be an electric heating base, and thus the controlled heating can be achieved, so that the accurate control of the temperature can be achieved, greatly ensuring the high stability and high precision during the plating process of the film layer.

[0142] It should be noted that the second aperture plate 113 also adopts the same combined configuration as the first aperture plate 112, which will not be described here.

[0143] Through the above arrangement, based on the simulation and test, the diameters of the circular holes at different positions of the first aperture plate 112 and the second aperture plate 113 before and after optimization are different, so that the peripheral transmission gas is gathered to the center, thereby improving the gas flow at the gas filling port of the atom chamber, and increasing the plating efficiency and reliability. In order to simplify the design, the first aperture plate 112 and the second aperture plate 113 are arranged to be the same specification, and the shape and the distribution of the diameters of the circular holes of the first aperture plate 112 and the second aperture plate 113 can be adjusted according to the needs and the idea of the present application, so as to realize the plating of the atom chamber in different forms.

[0144] As shown in Figure 13 According to an embodiment of the present application, the system for preparing the sapphire plating atom chamber of the present application further comprises an alkali metal filling unit 2; wherein the alkali metal filling unit 2 comprises a gas filling pipeline 21, an alkali metal source 22, a heating oven 23 and a vacuum pumping unit. In the embodiment, in order to facilitate the reliable connection with the alkali metal source 22 and the atom chamber plated with the film layer, the gas filling pipeline 21 can be arranged as a glass pipeline, so that the glass pipeline is fused with each other, greatly ensuring the reliability and convenience of the connection. In addition, the reliable sealing of the atom chamber after the filling of the alkali metal can also be realized.

[0145] Further, the gas filling pipeline 21 is partially arranged in the heating oven 23, and the alkali metal source 22 is connected with the part of the gas filling pipeline 21 in the heating oven 23; thus, the fusion of the alkali metal source 22 and the atom chamber to the gas filling pipeline 21 in the heating oven 23 can be conveniently realized, and the overall heating after the connection can be conveniently realized, greatly improving the use convenience of the present application.

[0146] Further, the vacuum pumping unit is connected with the end part of the gas filling pipeline 21 outside the heating oven 23; thus, the discharge of the residual air inside before the filling of the alkali metal can be conveniently realized, so as to effectively ensure the high-purity filling effect of the present application.

[0147] like Figure 13 As shown, according to one embodiment of the present invention, the heating oven 23 includes a hollow upper cover 231 and a bottom plate 232; wherein the upper cover 231 and the bottom plate 232 are closable. In this embodiment, the heating oven 23 can be configured as a rectangular structure, wherein the upper cover 231 is a hollow rectangular box body with an opening at the lower end, and the bottom plate 232 is a rectangular plate that matches the lower opening of the upper cover 231; wherein both the upper cover 231 and the bottom plate 232 are provided with heaters to achieve controlled heating. In this embodiment, a linear groove is provided on one side of the upper cover 231, which allows the air filling pipe 21 to pass through the linear groove of the upper cover 231 to facilitate the vertical movement of the upper cover 231.

[0148] The above description is merely an example of a specific solution of the present invention. For any devices and structures not described in detail herein, it should be understood that they are implemented using common devices and methods already available in the art.

[0149] The above description is merely one embodiment of the present invention and is not intended to limit the invention. Various modifications and variations can be made to the invention by those skilled in the art. Any modifications, equivalent substitutions, or improvements made within the spirit and principles of the present invention should be included within the scope of protection of the present invention.

Claims

1. A method for preparing a sapphire-coated atomic gas cell, characterized in that, The method comprises the following steps: S1. placing the cleaned atom chamber on the heating base of the reaction chamber, and filling the reaction chamber with replacement gas to remove residual gas therein; S2. filling the reaction chamber with aluminum source gas, and chemisorbing on the wall surface of the atom chamber based on atomic layer deposition technology to form a first film layer; S3. filling the reaction chamber with replacement gas to remove residual aluminum source gas therein; S4. filling the reaction chamber with oxide gas to oxidize the first film layer and convert it into an aluminum oxide film layer; S5. filling the reaction chamber with replacement gas to remove residual oxide gas therein; S6. repeating steps S2 to S5 to form an aluminum oxide film layer with a preset number of layers and a preset thickness on the wall surface of the atom chamber to form a sapphire-coated atom chamber; The film-coating unit (1) for implementing the above film-coating method comprises a reaction chamber (11) with a heating base, a first pipeline (12) connected to the reaction chamber (11), an aluminum source device (13), an oxide source device (14), and a replacement gas source device (15) connected to the first pipeline (12); The reaction chamber (11) comprises a regular and hollow reaction chamber body (111), a first aperture plate (112) and a second aperture plate (113) arranged at opposite ends of the reaction chamber body (111), respectively; One end of the first pipeline (12) is connected to the position where the first aperture plate (112) is arranged on the reaction chamber body (111); The first aperture plate (112) has a plurality of first through holes (112a) penetrating through the body thereof, and the first through holes (112a) have a plurality of hole diameters, and the first through holes (112a) are arranged in a direction from the center to the edge of the first aperture plate (112) based on the rule of decreasing diameter and increasing number; The second aperture plate (113) has a plurality of second through holes (113a) penetrating through the body thereof, and the second through holes (113a) have a plurality of hole diameters, and the second through holes (113a) are arranged in a direction from the center to the edge of the second aperture plate (113) based on the rule of decreasing diameter and increasing number; Based on the hole diameters at different positions of the first aperture plate (112) and the second aperture plate (113), the peripheral transmission gas is gathered towards the center, and the gas flow at the gas inlet of the atom chamber is improved.

2. The method for preparing a sapphire-coated atomic gas chamber according to claim 1, wherein, Further comprising: S7. taking out the atom chamber and performing alkali metal charging.

3. The method for preparing a sapphire-coated atomic gas cell according to claim 2, wherein, In step S1, the step of placing the cleaned atom chamber on the heating base of the reaction chamber, the working temperature of the heating base is 250-300°C; The gas inlet of the atom chamber is arranged perpendicular to the gas inlet direction of the reaction chamber.

4. The method for preparing a sapphire-coated atomic gas chamber according to claim 3, wherein, In step S2, the step of filling the reaction chamber with aluminum source gas, an alternating pulse gas inlet mode is used to fill the reaction chamber with aluminum source gas; wherein in the used alternating pulse gas inlet mode, the pulse gas inlet time is greater than or equal to 10 min.

5. The method for preparing a sapphire-coated atomic gas chamber according to claim 4, wherein, In step S4, the step of filling the reaction chamber with oxide gas to oxidize the first film layer and convert it into an aluminum oxide film layer, the thickness of the aluminum oxide film layer is 0.1-0.2 nm.

6. The method for preparing a sapphire-coated atomic gas chamber according to claim 5, wherein, In step S7, the step of taking out the atomic gas chamber and alkali metal charging includes: S71. connecting an alkali metal source and at least one of the atomic gas chambers to the same charging pipeline; S72. vacuumizing the atomic gas chamber based on the charging pipeline, and setting the atomic gas chamber, the alkali metal source and at least part of the charging pipeline in a heating oven; S73. opening the sealing structure between the alkali metal source and the charging pipeline, and starting the heating oven to perform cladding heating in a preset heating scheme; wherein the preset heating scheme is: from room temperature to 200°C, 1h for heating, 2h for maintaining at 200°C, and from 200°C to room temperature, 1h for cooling; S74. after the heating oven completes heating based on the preset heating scheme, removing the heating oven, and taking out the atomic gas chamber from the charging pipeline after sealing, to complete the alkali metal charging of the atomic gas chamber.

7. The method for preparing a sapphire-coated atomic gas cell according to claim 6, wherein, In step S72, based on the step of evacuating the atomic gas chamber by the gas filling pipe, the degree of vacuum of the evacuated vacuum degree is superior to 10 -5 Pa.

8. The method for preparing a sapphire-coated atomic gas cell according to claim 7, wherein, The atomic gas chamber is a high-boron-silicon glass gas chamber or a quartz material gas chamber; The aluminum source gas is trimethylaluminum gas; The oxide gas is deionized water vapor; The alkali metal of the alkali metal source is cesium metal or rubidium metal.

9. A system for use in a method of manufacturing a sapphire-coated atomic gas cell according to any one of claims 1 to 8, characterized in that, It includes: A coating unit (1); The coating unit (1) includes: a reaction chamber (11) with a heating base, a first pipeline (12) connected with the reaction chamber (11), an aluminum source device (13), an oxide source device (14) and a displacement gas source device (15) connected with the first pipeline (12); The reaction chamber (11) includes: a regular and hollow reaction chamber body (111), a first aperture plate (112) and a second aperture plate (113) respectively arranged at opposite ends of the reaction chamber body (111); One end of the first pipeline (12) is connected with the position where the first aperture plate (112) is arranged on the reaction chamber body (111); The first aperture plate (112) has a plurality of first through holes (112a) penetrating through the body, and the first through holes (112a) have a plurality of hole diameters, and the first through holes (112a) arranged from the center to the edge of the first aperture plate (112) are arranged based on the law that the diameter decreases and the number increases; The second aperture plate (113) has a plurality of second through holes (113a) penetrating through the body, and the second through holes (113a) have a plurality of hole diameters, and the second through holes (113a) arranged from the center to the edge of the second aperture plate (113) are arranged based on the law that the diameter decreases and the number increases; Based on the hole diameters at different positions of the first aperture plate (112) and the second aperture plate (113), the peripheral transmission gas is gathered to the center, and the gas flow at the gas charging port of the atomic gas chamber is improved.

10. The system for the preparation method of a sapphire-coated atomic gas chamber according to claim 9, wherein, It also includes: An alkali metal charging unit (2); The alkali metal charging unit (2) includes: a charging pipeline (21), an alkali metal source (22), a heating oven (23) and a vacuumizing unit; The charging pipeline (21) is partially arranged in the heating oven (23); The alkali metal source (22) is connected with the part of the charging pipeline (21) in the heating oven (23); The vacuumizing unit is connected with the end of the air filling pipeline (21) outside the heating oven (23); The heating oven (23) comprises a hollow upper cover (231) and a bottom plate (232); The upper cover (231) and the bottom plate (232) are openably arranged.

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