Deposition apparatus

Abstract

The present disclosure discloses a deposition apparatus comprising: a stage; and a nozzle assembly disposed on the stage and including an electrode portion extending in the first direction and a nozzle portion disposed below the electrode portion. A channel is defined in the electrode portion, the channel including: a main channel defined on an upper surface of the electrode portion and extending in a downward direction; a first channel extending in a first direction from a lower portion of the main channel; a first connection channel extending in a downward direction from a 1-1 region and a 1-2 region adjacent to opposing sides of the first channel that face each other in the first direction; and a second passage extending in the first direction from a lower portion of the first connection passage, and a nozzle portion disposed below the second passage.

Description

TECHNICAL FIELD

[0001] Embodiments of the disclosure described herein relate to a deposition apparatus. BACKGROUND

[0002] Display apparatuses such as televisions, monitors, smartphones, and tablets that provide images to users include display panels that display images. Various display panels such as liquid crystal display panels, organic light emitting display panels, electrowetting display panels, and electrophoretic display panels are being developed as display panels.

[0003] Processes for manufacturing display panels include a plasma enhanced chemical vapor deposition process and a plasma enhanced atomic layer deposition process that deposit a process gas into a plasma state by applying a high voltage while the process gas is sprayed to a surface of a target substrate. SUMMARY

[0004] Embodiments of the disclosure provide a deposition apparatus that can deposit a thin film having a uniform thickness on a substrate.

[0005] According to an embodiment, a deposition apparatus includes a stage, a nozzle assembly disposed on the stage and including an electrode portion extending in a first direction and a nozzle portion disposed under the electrode portion. A passage is defined in the electrode portion. The passage includes a main passage defined on an upper surface of the electrode portion and extending in a downward direction, a first passage extending from a lower portion of the main passage in the first direction, a first connection passage extending from a 1-1 area and a 1-2 area adjacent to opposite sides of the first passage in the first direction in the downward direction, and a second passage extending from a lower portion of the first connection passage in the first direction, and the nozzle portion is disposed under the second passage.

[0006] According to an embodiment, a deposition apparatus includes a stage, a housing portion disposed on the stage and including a main body in which a housing groove is defined and a support plate disposed on a lower surface of the main body, a nozzle assembly extending in a first direction and disposed in the housing groove, and a gas supply portion disposed on an upper surface of the housing portion, and opposite sides of the nozzle assembly opposite to each other in the first direction are disposed in support grooves defined in the support plate. BRIEF DESCRIPTION OF DRAWINGS

[0007] The above and other features of the disclosure will become more apparent by describing in detail embodiments thereof with reference to the attached drawings.

[0008] Figure 1 is a perspective view of a deposition apparatus according to an embodiment of the disclosure.

[0009] Figure 2 is Figure 1exploded perspective view of the gas injection portion shown in

[0010] Figure 3 is Figure 2 exploded perspective view of the nozzle assembly shown in

[0011] Figure 4 is a cross-sectional view of an electrode portion and a nozzle portion according to an embodiment of the present disclosure.

[0012] Figure 5 is a cross-sectional view of an electrode portion and a nozzle portion according to an embodiment of the present disclosure.

[0013] Figure 6A is a cross-sectional view of a portion corresponding to line IV-IV’ shown in Figure 2

[0014] Figure 6B is a cross-sectional view of a portion corresponding to line V-V’ shown in Figure 2

[0015] Figure 7 is Figure 3 exploded perspective view of the first insulating portion shown in

[0016] Figure 8 is Figure 2 perspective view of a portion of the housing portion and the gas supply portion shown in

[0017] Figure 9 is Figure 2 perspective view of the gas supply portion, the housing portion, and the nozzle assembly shown in

[0018] Figure 10A is Figure 9 side view of the gas injection portion shown in

[0019] Figure 10B is a side view of a gas injection portion according to an embodiment of the present disclosure.

[0020] Figure 11 is a view showing a process of deposition on a substrate by using a deposition apparatus according to an embodiment of the present disclosure.

[0021] Figure 12A , Figure 12B and Figure 12C are views schematically showing an atomic layer deposition method.

[0022] Figure 13A and Figure 13B are cross-sectional views of a nozzle assembly according to an embodiment of the present disclosure. DETAILED DESCRIPTION

[0023] ​​In the present specification, when it is referred to that a component (or a region, a layer, a part, etc.) is "disposed on" another component, "connected to" another component, or "coupled to" another component, it means that the former component can be directly disposed on, directly connected to, or directly coupled to the latter component, or a third component can be disposed between the components.

[0024] The same reference numerals are used to designate the same components throughout the drawings. Also, in the drawings, the thickness, the ratio, and the size of components are exaggerated for effective description of the technical content. The term "and / or" includes one or more combinations that can be defined by the related components.

[0025] Also, in describing various components, terms such as first and second can be used, but the present disclosure is not limited by these terms. The terms are used only to distinguish components. For example, a first component can be named a second component, and similarly, a second component can also be named a first component without departing from the scope of the present disclosure. Singular expressions include plural expressions unless it is clearly described in the context to be exempted.

[0026] Also, terms such as "under", "below", "on", and "above" are used to describe the association between components shown in the drawings. These terms are relative concepts and are described with respect to the direction indicated in the drawings.

[0027] When terms such as "include" and / or "comprise" are used in the specification, it should be understood that they designate the existence of the above-mentioned features, numbers, steps, operations, components, parts, and / or combinations thereof, and do not exclude the existence or addition of one or more other numbers, steps, operations, components, parts, and / or combinations thereof.

[0028] Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this disclosure belongs. It will also be understood that terms such as those defined in a generally used dictionary should be interpreted as having a meaning that is consistent with their meaning in the context of the specification and related art, and should not be interpreted in an idealized or overly formal sense, unless otherwise defined herein.

[0029] Hereinafter, embodiments of the present disclosure will be described with reference to the accompanying drawings.

[0030] Figure 1 is a perspective view of a deposition apparatus DA according to an embodiment of the present disclosure. Figure 2 is Figure 1 is an exploded perspective view of a gas injection portion GEP shown in FIG. 1.

[0031] Referring to Figure 1, the deposition apparatus DA can include a stage STG and a gas ejection portion GEP (see Figure 2 ). Although not shown, the deposition apparatus DA can be housed in a chamber (not shown).

[0032] The stage STG can have a rectangular parallelepiped shape. An upper surface of the stage STG can be parallel to a plane defined by a first direction DR1 and a second direction DR2 intersecting the first direction DR1. However, this is exemplary, and the shape of the stage STG is not limited thereto.

[0033] Hereinafter, a direction substantially perpendicular to the plane defined by the first direction DR1 and the second direction DR2 is defined as a third direction DR3. Further, in the present specification, “when viewed on the plane” can be defined as a state of being observed from the third direction DR3.

[0034] The stage STG can support the substrate SUB. The substrate SUB can be reciprocated in the second direction DR2 and a direction opposite to the second direction DR2 below the gas ejection portion GEP (see Figure 2 ). To move the substrate SUB, the stage STG can be implemented as a movable stage.

[0035] Referring to Figure 1 and Figure 2 , the gas ejection portion GEP can be provided on the substrate SUB. The gas ejection portion GEP can include an accommodation portion AP, a gas supply portion GSP, and a plurality of nozzle assemblies NOA. As an example, the accommodation portion AP can have a rectangular parallelepiped shape, but the shape of the accommodation portion AP is not limited thereto. Although not shown in Figure 2 , an accommodation groove AGR (see Figure 8 ) for accommodating the nozzle assembly NOA can be defined on a lower surface of the accommodation portion AP. The accommodation groove AGR (see Figure 8 ) will be described in detail below.

[0036] The gas supply portion GSP can be provided on an upper surface of the accommodation portion AP. The gas supply portion GSP can have a rectangular parallelepiped shape extending longer in the second direction DR2 than in the first direction DR1. The gas supply portion GSP can include a plurality of gas supply pipes IOP. The gas supply pipes IOP can be arranged in the second direction DR2. Although not shown, the gas supply pipes IOP can be connected to the nozzle assembly NOA. The gas supply portion GSP can supply the nozzle assembly NOA with a gas received from the outside. This will be described in detail with reference to Figure 9 and Figure 10A .

[0037] The nozzle assembly NOA can be provided in the accommodation groove AGR (seeFigure 8 The nozzle assembly NOA can extend in a first direction DR1 and can be arranged in a second direction DR2. A length of the nozzle assembly NOA in the first direction DR1 can correspond to a length of the substrate SUB in the first direction DR1.

[0038] The nozzle assembly NOA receiving the gas from the gas supply portion GSP can be fixed on the substrate SUB by the accommodation portion AP and can spray the gas onto the substrate SUB. The nozzle assembly NOA can form a thin film on the substrate SUB by an atomic layer deposition (ALD) process of spraying the gas. In order of the second direction DR2, odd-numbered nozzle assemblies NOA can spray a reactant gas. Even-numbered nozzle assemblies NOA can spray a source gas. The reactant gas can react with the source gas on the substrate SUB. Reference will be made to Figure 12A to Figure 12C The atomic layer deposition process is described in detail.

[0039] Figure 3 is an exploded perspective view of the nozzle assembly NOA shown in Figure 2 Figure 4 is a cross-sectional view of a portion corresponding to line IV-IV’ shown in Figure 5 is a cross-sectional view of a portion corresponding to line V-V’ shown in Figure 6A is an exploded perspective view of the first insulation portion IN1 shown in Figure 2 Figure 6B is a cross-sectional view of a portion corresponding to line VI-VI’ shown in Figure 2 Figure 7 is an exploded perspective view of the nozzle assembly NOA shown in Figure 3

[0040] As an example, Figure 4 and Figure 5 is a cross-sectional view of a portion corresponding to line VI-VI’ shown in Figure 3

[0041] For ease of description, any one of the nozzle assemblies NOA of Figure 2 will be described.

[0042] Referring to Figure 3 and Figure 4 , the nozzle assembly NOA can include an electrode portion FR, a nozzle portion NOP, a first insulation portion IN1, a second insulation portion IN2, and a cover portion CV. The electrode portion FR can extend in a first direction DR1.

[0043] ​​​​​The electrode portion FR can include a first portion PT1 and a second portion PT2. The first portion PT1 can have a rectangular parallelepiped shape extending in the first direction DR1, but the shape of the first portion PT1 is not limited thereto.

[0044] The second portion PT2 can be disposed on the first portion PT1. The second portion PT2 can be disposed on the upper surface of the first portion PT1. The second portion PT2 can overlap the center of the first portion PT1. The second portion PT2 can have a cylindrical shape, but the shape of the second portion PT2 is not limited thereto.

[0045] Referring to Figure 4 , Figure 6A and Figure 6B , the main passage MPS, the first passage PSG1, the plurality of first connection passages CSG1, and the second passage PSG2 can be included in the inside of the electrode portion FR. The main passage MPS can be defined by the second portion PT2. The main passage MPS can extend in the third direction DR3.

[0046] The first passage PSG1, the first connection passage CSG1, and the second passage PSG2 can be defined in the first portion PT1. The first passage PSG1 can extend in the first direction DR1 under the main passage MPS. Here, the meaning of "extending in the first direction DR1" is defined as being able to extend not only in the first direction DR1 but also in the direction opposite to the first direction DR1.

[0047] In the first passage PSG1, a 1-1 area A1-1 and a 1-2 area A1-2 can be defined. The 1-1 area A1-1 and the 1-2 area A1-2 can be defined as areas adjacent to opposite sides of the first passage PSG1 opposite to each other in the first direction DR1. The 1-1 area A1-1 and the 1-2 area A1-2 can be disposed between the center of the first passage PSG1 and the opposite sides of the first passage PSG1 opposite to each other in the first direction DR1.

[0048] The first connection passage CSG1 can extend in the third direction DR3 in the 1-1 area A1-1 and the 1-2 area A1-2. The first connection passage CSG1 can extend in a downward direction (for example, a direction opposite to the third direction DR3) in the 1-1 area A1-1 and the 1-2 area A1-2. The first connection passage CSG1 can be disposed between the center of the electrode portion FR and the opposite sides of the electrode portion FR opposite to each other in the first direction DR1. The first connection passage CSG1 can be disposed adjacent to the opposite sides of the first passage PSG1 opposite to each other in the first direction DR1. The first passage PSG1 and the first connection passage CSG1 can be continuously defined in the third direction DR3.

[0049] The second channel PSG2 may extend below the first connecting channel CSG1 in the first direction DR1. The second channel PSG2 may be defined as continuous with the first connecting channel CSG1 in the third direction DR3.

[0050] like Figure 6A As shown, in regions 1-1A1-1 and 1-2A1-2, the first channel PSG1 and the second channel PSG2 can be connected to each other via the first connecting channel CSG1. Figure 6B As shown, in regions other than the first region A1-1 and the second region A1-2, the first channel PSG1 and the second channel PSG2 can be separated from each other.

[0051] The nozzle portion (NOP) may be disposed below the electrode portion (FR). The nozzle portion (NOP) and the electrode portion (FR) may be substantially integrally formed, but are not limited thereto. A plurality of nozzle channels (NSCs) may be defined within the nozzle portion (NOP). The nozzle channels (NSCs) may be defined on the third direction (DR3) as continuous with the second channel (PSG2). In an embodiment, the plurality of nozzle channels (NSCs) defined within the nozzle portion (NOP) may extend from the second channel (PSG2) in a downward direction (e.g., opposite to the third direction (DR3)).

[0052] When gas is introduced into the electrode section FR through the main channel MPS, the gas can diffuse along the first channel PSG1 to the first connection channel CSG1. The gas diffused into the first connection channel CSG1 can diffuse into the second channel PSG2. The gas diffused into the second channel PSG2 can be sprayed onto the substrate SUB through the nozzle channel NSC.

[0053] The electrode section FR can form gas into a plasma state. For example, when an RF power supply (not shown) is turned on and a high voltage is applied to the electrode section FR, the gas supplied to the first channel PSG1, the first connecting channel CSG1, and the second channel PSG2 can be excited into a plasma state. The gas excited into a plasma state can be injected into the substrate SUB through the nozzle channel NSC.

[0054] When substrate SUB (see) Figure 1As the nozzle assembly NOA becomes larger, the length of the nozzle assembly NOA in the first direction DR1 can increase. As the length of the nozzle assembly NOA increases, the length of the electrode portion FR in the first direction DR1 and the length of the nozzle portion NOP in the first direction DR1 can increase. When the gas supplied to the first passage PSG1 is injected onto the substrate SUB through the nozzle passage NSC, the gas can not sufficiently spread to opposite sides of the electrode portion FR opposite each other in the first direction DR1. Thus, because the gas is not uniformly injected onto the substrate SUB, the thickness of a thin film deposited on the substrate SUB can not be uniform.

[0055] However, in the electrode portion FR according to the embodiment of the disclosure, the gas can be supplied to the second passage PSG2 through the first connection passage CSG1 adjacent to the opposite side of the first passage PSG1, and the gas can spread to opposite sides of the second passage PSG2 opposite each other in the first direction DR1. Thus, the gas can be uniformly injected onto the substrate SUB through the nozzle passage NSC. Thus, the thickness of a thin film deposited on the substrate SUB can be uniform.

[0056] A description of components identical to those described above among components shown in the accompanying drawings described above will be omitted or simplified. Figure 5

[0057] Referring to Figure 5 , Figure 5 The electrode portion FRa and the nozzle portion NOPa shown in FIG. 10 can extend longer in the first direction DR1 than the electrode portion FR and the nozzle portion NOP shown in FIG. 1. By the electrode portion FRa and the nozzle portion NOPa shown in FIG. 10, a larger area of the substrate SUB can be deposited on than by the electrode portion FR and the nozzle portion NOP shown in FIG. 1. Figure 4 Figure 5 The substrate SUB on which the electrode portion FRa and the nozzle portion NOPa shown in FIG. 10 are deposited can have a larger area than the substrate SUB on which the electrode portion FR and the nozzle portion NOP shown in FIG. 1 are deposited. Figure 4

[0058] A plurality of 2-1 areas A2-1 and a plurality of 2-2 areas A2-2 can be defined in the second passage PSG2. The 2-1 areas A2-1 and the 2-2 areas A2-2 can be defined as areas disposed on the outer sides of the center of the second passage PSG2. The 2-1 areas A2-1 and the 2-2 areas A2-2 can be disposed between the opposite sides of the second passage PSG2 opposite each other in the first direction DR1 and the center of the second passage PSG2.

[0059] The 2-1 areas A2-1 can be disposed on the left side of the center of the second passage PSG2 when viewed from the second direction DR2. As an example, Figure 5 ​​​Two second-2 regions A2-2 are shown in FIG. 2, but the number of second-2 regions A2-2 is not limited thereto.

[0060] The second-2 regions A2-2 can be disposed on the right side of the center of the second passages PSG2 when viewed in the second direction DR2. As an example, Figure 5 Two second-2 regions A2-2 are shown in FIG. 2, but the number of second-2 regions A2-2 is not limited thereto.

[0061] The second connection passages CSG2 and the third passages PSG3 can also be defined in the inside of the electrode portion FRa. The second connection passages CSG2 can extend in the third direction DR3 in the second-1 regions A2-1 and the second-2 regions A2-2. The second connection passages CSG2 can extend in a downward direction (e.g., a direction opposite to the third direction DR3) in the second-1 regions A2-1 and the second-2 regions A2-2. The second connection passages CSG2 can be disposed between the center of the electrode portion FRa and opposite sides of the electrode portion FRa opposite to each other in the first direction DR1. The second connection passages CSG2 can be defined to be continuous to the second passages PSG2 in the third direction DR3. As an example, two second connection passages CSG2 are respectively disposed on the left and right sides of the second passages PSG2, but the number of second connection passages CSG2 is not limited thereto.

[0062] The third passages PSG3 can extend in the first direction DR1 under the second connection passages CSG2. The third passages PSG3 can be defined to be continuous to the second connection passages CSG2 in the third direction DR3.

[0063] When the gas is supplied through the main passages MPS, the gas can be diffused to the first passages PSG1, the first connection passages CSG1, and the second passages PSG2. The gas diffused to the second passages PSG2 can be diffused to the third passages PSG3 through the second connection passages CSG2. The gas diffused to the third passages PSG3 can be injected to the substrate SUB through the nozzle passages NSC.

[0064] When the second connection passages CSG2 and the third passages PSG3 are defined, the gas can be diffused to opposite sides of the electrode portion FRa opposite to each other in the first direction DR1 even when the area of the substrate SUB increases. Accordingly, the gas can be uniformly injected to the substrate SUB through the nozzle passages NSC. Accordingly, the thickness of a thin film deposited on the substrate SUB can be uniform.

[0065] REFERENCE Figure 3 AND Figure 6AThe first insulation portion IN1 can be disposed at opposite sides of the nozzle portion NOP opposite each other in the second direction DR2 when viewed in the first direction DR1. The first insulation portion IN1 can include an insulating material. As an example, the first insulation portion IN1 can include ceramic, but the material of the first insulation portion IN1 is not limited thereto.

[0066] The first insulation portion IN1 can include a plurality of bar portions BP, a plurality of protrusions PT, a plurality of block portions BL, and a plurality of support portions SPP. The bar portions BP can extend in the first direction DR1 and can be disposed to be spaced apart from each other in the second direction DR2. The nozzle portion NOP can be disposed between the bar portions BP when viewed in the first direction DR1. As an example, the bar portions BP can have a portion shape of a rectangular shape, but the shape of the bar portions BP is not limited thereto.

[0067] The protrusions PT can extend in the second direction DR2 from sides of the bar portions BP facing each other. The protrusions PT can extend toward the nozzle portion NOP.

[0068] The grooves GR can be defined on opposite sides of the nozzle portion NOP opposite each other in the second direction DR2. The grooves GR can extend in the first direction DR1. The grooves GR can have a shape corresponding to a portion of a rectangular shape when viewed in the first direction DR1.

[0069] The protrusions PT can be disposed in the grooves GR. The protrusions PT can have a shape corresponding to the grooves GR. Essentially, the protrusions PT can fit into the grooves GR. Upper surfaces of the protrusions PT can support the nozzle portion NOP and the electrode portion FR. Accordingly, the bar portions BP can be fixed to the nozzle portion NOP and the electrode portion FR disposed on the nozzle portion NOP.

[0070] Referring to Figure 3 and Figure 7 The block portions BL can be arranged in the first direction DR1. The block portions BL can have an "L" shape when viewed in the second direction DR2, but the shape of the block portions BL is not limited thereto. An upper surface UP of the block portions BL can have a step. The upper surface UP of the block portions BL can include a first plane PL1 and a second plane PL2. A height of the second plane PL2 can be higher than a height of the first plane PL1.

[0071] Opposite sides of the nozzle portion NOP opposite each other in the first direction DR1 can be disposed on the upper surface UP of the block portions BL. The nozzle portion NOP can be disposed on the first plane PL1. The block portions BL can support the opposite sides of the nozzle portion NOP opposite each other in the first direction DR1.

[0072] The block portion BL can be coupled to opposite sides of the stem portion BP opposite to each other in the first direction DR1. The block portion BL and the stem portion BP can be coupled to each other so as to be detachable / separable from each other.

[0073] When the length of the electrode portion FR and the length of the nozzle portion NOP increase, the length of the first insulating portion IN1 can also increase. Then, when the block portion BL and the stem portion BP are integrally formed, it can not be easy to manufacture the first insulating portion IN1. In addition, when the range (e.g., length) of the substrate SUB (see Figure 1 ) changes, it can be necessary to change the first insulating portion IN1 having a length corresponding to the range of the changed substrate SUB (see Figure 1 ).

[0074] However, because the block portion BL and the stem portion BP are separately manufactured, it is only necessary to increase the length of the stem portion BP to make it easy to manufacture the first insulating portion IN1. In addition, even when the range of the substrate SUB (see Figure 1 ) changes, it is possible to perform the deposition process on various sizes of the substrate SUB by replacing the original stem portion BP with the stem portion BP having a length corresponding to the range of the changed substrate SUB (see Figure 1 ).

[0075] The support portion SPP can be provided on the lower surface of the block portion BL. The support portion SPP can be adjacently provided with one of the opposite sides among the opposite sides of the block portion BL opposite to each other in the first direction DR1. The dimension of the support portion SPP in the first direction DR1 can be smaller than the dimension of the block portion BL in the first direction DR1. Basically, the support portion SPP can extend in the third direction DR3 on the lower surface of the block portion BL. Basically, the support portion SPP can extend downward (e.g., in a direction opposite to the third direction DR3) from the lower surface of the block portion BL. Basically, the support portion SPP and the block portion BL can be integrally formed.

[0076] The support portion SPP can be provided on the support plate SPT (see Figure 8 ) to be described later to fix the nozzle portion NOP and the electrode portion FR to the accommodation portion AP. This will be described in detail with reference to Figure 8 and Figure 9 .

[0077] Reference is made to Figure 3 , Figure 6A and Figure 6BThe second insulating portion IN2 can be disposed on the first insulating portion IN1. The second insulating portion IN2 can be disposed on the upper surface of the stem portion BP. A portion of the second insulating portion IN2 can be disposed on the upper surface UP of the block portion BL. The second insulating portion IN2 can be disposed on the electrode portion FR. The second insulating portion IN2 can cover the electrode portion FR.

[0078] The second insulating portion IN2 can include an insulating material. As an example, the second insulating portion IN2 can include polytetrafluoroethylene, but the material of the second insulating portion IN2 is not limited thereto.

[0079] The second insulating portion IN2 can include an insulating portion INS and a plurality of dummy portions SPR. The insulating portion INS can be disposed on the upper surface of the stem portion BP. The insulating portion INS can cover the upper surface of the electrode portion FR and opposite side surfaces of the electrode portion FR opposite to each other in the second direction DR2. The upper surface of the electrode portion FR and the opposite side surfaces of the electrode portion FR can not be exposed to the outside from the insulating portion INS.

[0080] Because the electrode portion FR is surrounded by the first insulating portion IN1 and the second insulating portion IN2, it can not be electrically connected to the cap portion CV having 0 electric potential. Accordingly, the electrode portion FR can stably excite a gas into a plasma state.

[0081] The first opening OP1 can be defined on the upper surface of the insulating portion INS. The first opening OP1 can be defined at the center of the upper surface of the insulating portion INS. The first opening OP1 can overlap the second portion PT2. When the insulating portion INS covers the first portion PT1, the second portion PT2 can be disposed in the first opening OP1. The inner surface of the insulating portion INS defining the first opening OP1 can cover the second portion PT2.

[0082] The dummy portions SPR can be disposed on opposite sides of the insulating portion INS opposite to each other in the first direction DR1. The dummy portions SPR can extend from the insulating portion INS. When the insulating portion INS is disposed on the upper surface of the stem portion BP, the dummy portions SPR can be disposed on the second plane PL2 of the block portion BL. Accordingly, the dummy portions SPR can be supported by the second plane PL2.

[0083] The cap portion CV can cover the first insulating portion IN1 and the second insulating portion IN2. The first insulating portion IN1 and the second insulating portion IN2 can be disposed in the inside of the cap portion CV. The electric potential of the cap portion CV can be 0. That is, the cap portion CV can be grounded.

[0084] The cover portion CV may include a cover body CVB and a cover protrusion CVP. The cover body CVB may cover a first insulating portion IN1 and a second insulating portion IN2. The cover protrusion CVP may be disposed on the upper surface of the cover body CVB. The cover protrusion CVP may be disposed at the center of the upper surface of the cover body CVB.

[0085] The second opening OP2 can be defined on the upper surface of the cover protrusion CVP. As an example, the second opening OP2 can have a partial cylindrical shape. When the cover body CVB covers the first insulating portion IN1 and the second insulating portion IN2, the second portion PT2 can be disposed in the second opening OP2. The outer surface of the second portion PT2 can be covered by the cover protrusion CVP.

[0086] Figure 8 yes Figure 2 A perspective view of the containment section AP and the gas supply section GSP shown. Figure 9 yes Figure 2 The diagram shows a perspective view of the gas supply section GSP, the containment section AP, and the nozzle assembly NOA. Figure 10A yes Figure 9 The side view of the gas injection section GEP shown. Figure 10B This is a side view of the gas injection section GEP according to an embodiment of the present disclosure.

[0087] As an example, Figure 8 and Figure 9 It is shown that... Figure 2 A three-dimensional view of the cross-section corresponding to line III-III' shown.

[0088] As an example, Figure 8 This is a perspective view showing the nozzle assembly NOA not being placed in the receiving groove AGR of the receiving part AP, and... Figure 9 This is a perspective view of the nozzle assembly (NOA) being positioned within the receiving groove (AGR) of the receiving portion (AP).

[0089] When referring to the accompanying drawings described above, details will be omitted or simplified. Figure 8 to Figure 10B The description of the components shown that are the same as those described above.

[0090] refer to Figure 8 The receiving portion AP may include a main body BD and multiple support plates SPT. The receiving groove AGR may be defined within the main body BD. The receiving groove AGR may have a shape corresponding to a rectangular portion.

[0091] The support plate SPT can be disposed on the lower surface of the main body BD. The support plates SPT can extend in the second direction DR2 and can be spaced apart from each other in the first direction DR1. As an example, the support plates SPT can be parallel to the plane defined by the first direction DR1 and the second direction DR2.

[0092] Multiple support grooves SGR can be defined on the upper surface of the support plate SPT. The support grooves SGR defined in the support plate SPT can be arranged in the second direction DR2. The support grooves SGR defined in different support plates SPT can be arranged to correspond to each other in the first direction DR1.

[0093] refer to Figure 9 and Figure 10A ,exist Figure 9 and Figure 10A The present invention describes a nozzle assembly NOA disposed in a receiving groove AGR, but the present disclosure is not limited thereto, and multiple nozzle assemblies NOA may be disposed in the receiving groove AGR.

[0094] The nozzle assembly NOA can be disposed in the receiving groove AGR. The nozzle assembly NOA can be disposed on the support plate SPT. The opposing sides of the nozzle assemblies NOA in the first direction DR1 can be disposed on the upper surface of the support plate SPT. The support plate SPT can support the nozzle assembly NOA.

[0095] The support portion SPP of the nozzle assembly NOA can be disposed in the support groove SGR. The support groove SGR can have a shape corresponding to the support portion SPP. Therefore, the nozzle assembly NOA can be connected to the receiving portion AP.

[0096] Because the support portion SPP is positioned on the support groove SGR, the nozzle assembly NOA can be fixed in a predetermined location. Therefore, the nozzle assembly NOA can precisely inject gas onto the substrate SUB, thereby improving the deposition reliability of the substrate SUB.

[0097] refer to Figure 10B The receiving portion AP may also include multiple dummy plates DPL. The dummy plates DPL can be disposed within the support groove SGR. The dummy plates DPL can have a specific thickness. The nozzle assembly NOA can be disposed on the upper surface of the dummy plates DPL. Because the nozzle assembly NOA is disposed on the upper surface of the dummy plates DPL, the height of the lower surface of the nozzle assembly NOA can be increased. By providing multiple dummy plates DPL in the support groove SGR, the nozzle assembly NOA and the substrate SUB (see [reference]) can be easily adjusted. Figure 1 The distance between them.

[0098] refer to Figure 10AWhen the nozzle assembly NOA is disposed in the accommodation groove AGR, the gas supply portion GSP can supply gas to the nozzle assembly NOA. The cover protrusion CVP can be connected to the gas supply pipe IOP. The gas supply pipe IOP can be connected to the second portion PT2 (see Figure 3 ) disposed in the second opening OP2 (see Figure 3 ). The gas supply pipe IOP can be connected to the main passage MPS (see Figure 4 ). The gas supply pipe IOP can supply gas to the main passage MPS (see Figure 4 ).

[0099] Although not shown, a plurality of gas supply pipes IOP can be provided to correspond to the number of nozzle assemblies NOA, and each of the gas supply pipes IOP can be connected to a corresponding one of the nozzle assemblies NOA to supply gas.

[0100] Figure 11 is a view illustrating a process of deposition on a substrate SUB by using a deposition apparatus DA according to an embodiment of the disclosure. Figure 12A to Figure 12C is a view schematically illustrating an atomic layer deposition method.

[0101] As an example, Figure 11 is a cross-sectional view of a portion corresponding to the line I-I' shown in Figure 1 .

[0102] As an example, Figure 12A to Figure 12C may be a process of forming a gate oxide dielectric film by an atomic layer deposition method.

[0103] For convenience of description, the support plate SPT (see Figure 8 ) and the cover protrusion CVP (see Figure 8 ) of the accommodation portion AP (see Figure 3 ) are omitted.

[0104] When referring to the above-described drawings, the description of the same components among the components shown in Figure 11 to Figure 12C as those described above will be omitted or simplified.

[0105] Referring to Figure 11 , the substrate SUB disposed on the stage STG can be a substrate of a display device. The gas ejection portion GEP can be disposed on the substrate SUB. Gas can be ejected onto the substrate SUB in a state in which the gas ejection portion GEP is fixed. While the stage STG and the substrate SUB reciprocate in the second direction and a direction opposite to the second direction DR2, gas can be deposited on the upper surface of the substrate SUB. The gas can be deposited on the substrate SUB in units of atomic layers. The deposition process will be described in detail below.

[0106] Referring toFigure 12A The precursor PCS can be sprayed in a gas form onto the substrate SUB. The precursor PCS can be defined as a source gas. As an example, the precursor PCS can include Al(CH3)3. The precursor PCS can be adsorbed onto the substrate SUB. As an example, 2 Al(CH3)3, which is a molecule of Al(CH3)3, can be adsorbed onto the substrate SUB.

[0107] Only one layer of the precursor PCS can be adsorbed onto the substrate SUB. Even when Al(CH3)3 is continuously supplied as the precursor PCS, only one layer can be accumulated on the substrate SUB. This state can be defined as a self-limiting reaction. The remaining precursor PCS, which is not adsorbed onto the substrate SUB and is left, can be discharged to the outside.

[0108] Referring to Figure 12B The reactant RCT can be sprayed in a gas form onto the substrate SUB. The reactant RCT can be defined as a reaction gas. As an example, the reactant RCT can be H2O. Three H2O molecules can be supplied onto the substrate SUB. The reactant RCT can perform a chemical substitution reaction with the precursor PCS. As an example, H2O can perform a chemical substitution reaction with Al(CH3)3.

[0109] As with the precursor PCS, H2O as the reactant RCT is continuously supplied so that only one layer can be adsorbed / substituted. The remaining reactant RCT can be discharged to the outside.

[0110] Referring to Figure 12C One atomic layer ATL can be formed on the substrate SUB due to the chemical substitution reaction between the reactant RCT and the precursor PCS. As an example, H2O reacts with Al(CH3)3, and only Al2O3 is formed as a monolayer on the substrate SUB, and the gas GS (e.g., CH4) remaining after the substitution reaction can be discharged to the outside.

[0111] Referring to Figure 11 The plurality of nozzle assemblies NOA can spray a source gas or a reaction gas. Although seven nozzle assemblies NOA are shown, the number of nozzle assemblies NOA is not limited thereto.

[0112] In order, in the second direction DR2, the gas sprayed from the nozzle assembly NOA disposed in odd numbers and the gas sprayed from the nozzle assembly NOA disposed in even numbers can be different from each other.

[0113] The nozzle assembly NOA disposed in even numbers can spray a precursor PCS in a gas form of Figure 12A The nozzle assembly NOA disposed in odd numbers can spray a reactant RCT in a gas form of Figure 12B The nozzle assembly NOA disposed in odd numbers can spray a reactant RCT in a gas form of

[0114] As an example, when the substrate SUB moves in the second direction DR2, the kth nozzle assembly NOA can spray a source gas to deposit a precursor PCS (see Figure 12A ) on the substrate SUB, and then the (k+1)th nozzle assembly NOA can spray a reaction gas to laminate a reactant RCT (see Figure 12A ) on the precursor PCS (see Figure 12B ). "k" can be an even number of 2 or more. When the substrate SUB moves once in the second direction DR2, the deposition process can be performed three times in the order of the second direction DR2 by the nozzle assemblies NOA except for the first nozzle assembly NOA.

[0115] In the order of the direction opposite to the second direction DR2, the nth nozzle assembly NOA can spray a source gas, and the (n+1)th nozzle assembly NOA can spray a reaction gas. "n" can be an even number of 2 or more. When the substrate SUB moves once in the direction opposite to the second direction DR2, the deposition process can be performed three times in the order of the direction opposite to the second direction DR2 by the nozzle assemblies NOA except for the first nozzle assembly NOA. That is, when the substrate SUB reciprocates once in the second direction DR2 and the direction opposite to the second direction DR2, six deposition processes can be performed.

[0116] When the gas is sprayed onto the substrate SUB, the ratio of the amount of gas deposited on the substrate SUB to the amount of gas sprayed from the nozzle assembly NOA can be limited regardless of the width of the nozzle assembly NOA in the second direction DR2. Therefore, when an atomic layer ATL (see Figure 12C ) is to be deposited to a certain thickness, the stage STG and the substrate SUB can reciprocate multiple times, and the deposition process time can be prolonged.

[0117] In the case of the deposition apparatus DA according to the embodiment of the disclosure, the width of the nozzle assembly NOA in the second direction DR2 can be reduced. As the width of the nozzle assembly NOA is reduced, the number of nozzle assemblies NOA disposed in the accommodation groove AGR can be increased. Therefore, when the substrate SUB reciprocates once, the number of deposition processes can be increased, and the number of reciprocations of the substrate SUB can be reduced. Therefore, the time taken to deposit an atomic layer ATL having a certain thickness on the substrate SUB can be shortened.

[0118] However, this is exemplary, and the nozzle assemblies NOA disposed with odd numbers can spray a source gas, and the nozzle assemblies NOA disposed with even numbers can spray a reaction gas.

[0119] A plurality of discharge portions (e.g., discharge grooves VGR) can be further defined on the lower surface of the accommodation portion AP (seeFigure 11 The discharge groove VGR can be provided on the nozzle assembly NOA. The discharge groove VGR can extend from the upper portion of the accommodation groove AGR in the third direction DR3. The discharge groove VGR and the accommodation groove AGR can be continuously defined in the third direction DR3.

[0120] When the gas is ejected from the nozzle assembly NOA, the discharge groove VGR can discharge the gas to the outside. When the discharge groove VGR discharges the gas to the outside, it can be possible to prevent the source gas ejected from the even-numbered nozzle assembly NOA from flowing to the odd-numbered nozzle assembly NOA, or it can be possible to prevent the reaction gas ejected from the odd-numbered nozzle assembly NOA from flowing to the even-numbered nozzle assembly NOA.

[0121] Although not shown, a curtain gas ejection portion can be further provided between the nozzle assemblies NOA. The gas ejected from the curtain gas ejection portion can include an inert gas such as argon or nitrogen that does not react with the source gas and the reaction gas. The gas ejected from the curtain gas ejection portion can block the source gas or the reaction gas from flowing to the outside.

[0122] Figure 13A and Figure 13B is a cross-sectional view of the nozzle assembly NOA according to an embodiment of the disclosure.

[0123] As an example, Figure 13A and Figure 13B is a cross-sectional view of a portion corresponding to line II-II' shown in Figure 2 When referring to the above-described drawings, a description of the same components as those described above among the portions shown in

[0124] will be omitted or simplified. Figure 13A to Figure 13B Referring to

[0125] and Figure 13A , the electrode portions FR, FRa and the nozzle portions NOP, NOPa can be respectively provided on the upper surfaces of the block portions BLa. Opposite sides of the nozzle portions NOP opposite to each other in the first direction DR1 can be provided on the first planes PL1 of the block portions BLa. Figure 13B The block portions BLa can cover the opposite side surfaces of the nozzle portions NOP opposite to each other in the first direction DR1. The block portions BLa can cover the opposite side surfaces of the electrode portions FR opposite to each other in the first direction DR1 and a portion of the upper surfaces of the electrode portions FR. The block portions BLa can cover the main passages MPS (see

[0126] Figure 4 ).

[0127] ​The nozzle assembly NOA can further include a gas supply passage (e.g., a gas supply pipe IOPa). The gas supply pipe IOPa can be disposed in the inside of any one of the block portions BLa. As an example, in Figure 13A and Figure 13B , the gas supply pipe IOPa can be disposed in the inside of the block portion BLa disposed on the left side thereof. Then, the gas supply portion GSP (see Figure 2 ) can be omitted.

[0128] The gas supply pipe IOPa can extend in the third direction DR3 and the first direction DR1. For example, when viewed from the second direction DR2, the gas supply pipe IOPa can have an inverted "L" shape. The gas supply pipe IOPa can be connected to the main passage MPS to deliver a gas supplied from the outside to the main passage MPS.

[0129] Because the nozzle assembly NOA includes the gas supply pipe IOPa, the gas supply portion GSP (see Figure 2 ) can be omitted, and thus the structure of the gas injection portion GEP can be simplified. Accordingly, the nozzle assembly NOA can be easily managed.

[0130] According to embodiments of the present disclosure, a gas supplied to the first passage PSG1 is supplied to the second passage PSG2 through the first connection passage CSG1 adjacent to the opposite side of the first passage PSG1, and the gas can be diffused to the opposite sides of the second passage PSG2 opposite to each other in the first direction DR1. Accordingly, the gas can be uniformly injected onto the substrate SUB. Thus, the thickness of the deposition of the thin film on the substrate SUB can be uniform.

[0131] Although the present disclosure has been described with reference to embodiments, it will be appreciated by those of ordinary skill in the art that various modifications and changes can be made thereto without departing from the spirit and technical scope of the present disclosure, which can be covered by the appended claims. Accordingly, the technical scope of the present disclosure should not be limited to the detailed description of the specification, but be determined by the claims.

Claims

1. A deposition apparatus comprising: a stage; and a nozzle assembly disposed on the stage and including an electrode portion extending in a first direction and a nozzle portion disposed below the electrode portion, wherein a passage is defined in the electrode portion, wherein the passage includes: a main passage defined on an upper surface of the electrode portion and extending in a downward direction; a first passage extending from a lower portion of the main passage in the first direction; a first connection passage extending from 1-1 and 1-2 regions adjacent to opposite sides of the first passage opposite to each other in the first direction in the downward direction; and a second passage extending from a lower portion of the first connection passage in the first direction, and wherein the nozzle portion is disposed below the second passage.

2. The deposition apparatus of claim 1, wherein, The 1-1 and 1-2 regions are disposed between the opposite sides of the first passage opposite to each other in the first direction and a center of the first passage.

3. The deposition apparatus of claim 2, wherein, A plurality of nozzle passages defined in the nozzle portion extend from the second passage in the downward direction.

4. The deposition apparatus of claim 2, wherein, The passage further includes: a second connection passage extending from 2-1 and 2-2 regions adjacent to opposite sides of the second passage opposite to each other in the first direction in the downward direction; and a third passage extending from the second connection passage in the first direction, and wherein a plurality of nozzle passages defined in the nozzle portion extend from the third passage in the downward direction.

5. The deposition apparatus of claim 4, wherein, The 2-1 and 2-2 regions are disposed between the opposite sides of the second passage opposite to each other in the first direction and a center of the second passage.

6. The deposition apparatus of claim 1, wherein, The nozzle assembly includes: a first insulation portion extending in the first direction and disposed on opposite sides of the nozzle portion opposite to each other in a second direction crossing the first direction; and a second insulation portion disposed on the first insulation portion and covering the electrode portion, wherein the first insulation portion includes: a plurality of rod portions extending in the first direction and spaced apart from each other in the second direction; and a protrusion extending from sides of the plurality of rod portions facing each other, and wherein the protrusion is disposed in a groove defined on the opposite sides of the nozzle portion opposite to each other in the second direction.

7. The deposition apparatus of claim 6, wherein, The first insulation portion further includes: a plurality of block portions disposed on opposite sides of the plurality of rod portions opposite to each other in the first direction; and a plurality of support portions extending downward from lower surfaces of the plurality of block portions.

8. The deposition apparatus of claim 7, wherein, The block portions and the rod portions are coupled to each other to be separable from each other. 9.The deposition apparatus of claim 7, further comprising: a housing portion disposed on the stage and including a main body and a plurality of support plates, wherein the main body defines a housing groove housing the nozzle assembly, and the plurality of support plates are disposed on a lower surface of the main body, the plurality of support plates extending in the second direction and spaced apart from each other in the first direction.

10. The deposition apparatus of claim 9, wherein, opposite sides of the nozzle assembly to each other in the first direction are disposed on an upper surface of the plurality of support plates, and wherein the plurality of support portions are disposed in a plurality of support grooves defined on the upper surface of the plurality of support plates.

11. The deposition apparatus of claim 10, wherein, The accommodation portion further includes: a plurality of dummy plates disposed in the plurality of support grooves, and wherein the plurality of support portions are disposed on an upper surface of the plurality of dummy plates.

12. The deposition apparatus of claim 9, wherein, An exhaust portion is further defined in the accommodation portion, and the exhaust portion is disposed at an upper portion of the accommodation groove, and the exhaust portion and the accommodation groove are defined in the downward direction intersecting a plane defined by the first direction and the second direction.

13. The deposition apparatus of claim 7, wherein, A gas supply passage is defined in the plurality of block portions, and the main passage extends from the gas supply passage in the downward direction.

14. The deposition apparatus of claim 6, wherein, The nozzle assembly further includes: a cap portion covering the first insulating portion and the second insulating portion.

15. The deposition apparatus of claim 1, wherein, A plurality of nozzle assemblies are disposed, and the plurality of nozzle assemblies are arranged in a second direction intersecting the first direction, and wherein gas sprayed from nozzle assemblies disposed with odd numbers is different from gas sprayed from nozzle assemblies disposed with even numbers.

16. The deposition apparatus of claim 1, further comprising: a gas supply portion disposed on the nozzle assembly and including a gas supply pipe, wherein the gas supply pipe and the nozzle assembly are connected to each other.

17. A deposition apparatus comprising: a stage; an accommodation portion disposed on the stage and including a main body and a support plate, wherein an accommodation groove is defined in the main body, and the support plate is disposed on a lower surface of the main body; a nozzle assembly extending in a first direction and disposed in the accommodation groove; and a gas supply portion disposed on an upper surface of the accommodation portion, wherein opposite sides of the nozzle assembly to each other in the first direction are disposed in support grooves defined in the support plate.

18. The deposition apparatus of claim 17, wherein, The nozzle assembly includes: an electrode portion, wherein a passage is defined in an interior of the electrode portion; a nozzle portion disposed below the electrode portion; a first insulating portion disposed in a recess defined on opposite surfaces of the nozzle portion to each other in a second direction intersecting the first direction; and a second insulating portion disposed on the first insulating portion and covering the electrode portion.

19. The deposition apparatus of claim 18, wherein, The passage includes: a main passage connected to the gas supply portion; a first passage extending from a lower portion of the main passage in the first direction; a second passage disposed below the first passage and extending in the first direction; and a first connection passage extending from 1-1 and 1-2 regions adjacent to opposite sides of the first passage to each other in the first direction in a downward direction and connected to the first passage and the second passage.

20. The deposition apparatus of claim 19, wherein, A nozzle passage defined in the nozzle portion extends from the second passage in the downward direction.

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