Thermoelectric conversion heat dissipation device integrated on glass substrate
By combining a flexible thermoelectric conversion module and a liquid cooling module on a glass substrate, the problem of heat dissipation and energy recovery in glass substrate packaging is solved, achieving a synergistic effect of efficient heat dissipation and power generation, adapting to the integration requirements of advanced packaging structures, and extending the lifespan of the chip.
Patent Information
- Application Number
- CN202511685226.4
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-11-18
- Publication Date
- 2026-02-13
AI Technical Summary
Existing technologies struggle to achieve a synergistic solution for efficient heat dissipation and highly integrated energy recovery in glass substrate packaging, especially in high-performance computing chips. Traditional thermoelectric conversion modules suffer from low heat dissipation and power generation efficiency due to insufficient contact thermal resistance and temperature difference, and are difficult to integrate into advanced packaging structures.
The system combines a flexible thermoelectric conversion module with a liquid cooling module. The circuit board made of flexible material is tightly bonded to the glass substrate. Combined with microchannel liquid cooling technology, it forms a highly efficient thermoelectric conversion and heat dissipation system. The thermoelectric conversion converts heat energy into electrical energy, and the liquid cooling module maintains the low temperature of the cold end, establishing a stable temperature difference.
It significantly reduces the core temperature of the chip, improves system energy efficiency, enables energy recovery, features a highly integrated structure, adapts to advanced packaging requirements, and extends chip lifespan.
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Figure CN121532007A_ABST
Abstract
Description
TECHNICAL FIELD
[0001] The present application relates to the technical field of semiconductor technology, and particularly relates to a thermoelectric conversion heat dissipation device integrated in a glass substrate. BACKGROUND
[0002] With the development of high-performance computing and artificial intelligence technology, higher standards are required, and semiconductor technology also needs to be improved. Specifically, it is embodied in the energy efficiency and waste heat recycling of electronic devices. Based on this, the glass substrate has more advantages than the organic substrate and the silicon substrate.
[0003] The disadvantage of the glass substrate is low thermal conductivity, which hinders the heat of the chip from being dissipated downward, resulting in excessive chip junction temperature and affecting performance, reliability and service life.
[0004] In order to solve the heat dissipation problem, the air cooling design and the heat pipe design in the prior art are difficult to cope with the heat flux density of 500W / cm 2 The micro-channel liquid cooling technology is valued because of its high heat dissipation efficiency and the ability to directly convert heat energy into electricity in thermoelectric conversion technology, which facilitates waste heat recycling. However, there are at least two contradictions in the related prior art that are difficult to reconcile-integration contradiction and efficiency contradiction. The so-called integration contradiction is that the traditional thermoelectric conversion module is a rigid, independent block structure, and its thickness and rigidity make it difficult to integrate into advanced packaging structures that are extremely sensitive to thickness. If it is forcibly placed between the chip and the heat sink, it will introduce a large contact thermal resistance and additional structural thermal resistance, which will actually worsen the heat dissipation. The efficiency contradiction is that the efficiency core of thermoelectric conversion depends on the temperature difference (ΔT) of its cold and hot ends. In a high-efficiency heat dissipation system (such as micro-channel liquid cooling), if the TEM is placed in the heat dissipation path, the hot end temperature will be quickly lowered, resulting in a small ΔT and a low power generation efficiency, and the energy recycling value is lost; if weak heat dissipation is used to avoid this problem, the chip will overheat.
[0005] Therefore, the technical problem in this specific technical field for a long time is how to design a device that efficiently cooperates heat dissipation and power generation in the specific and demanding environment of glass substrate packaging, so that it can meet the extreme heat dissipation requirement and realize meaningful waste heat recycling, while overcoming the physical integration obstacle. Related prior art solutions have not been able to provide a systematic solution to this problem.
[0006] Specifically, taking existing patent 1 (Publication No.: CN 116013883 A; Subject Title: A Chip Thermoelectric Cooling Device), existing patent 2 (Publication No.: CN 111780456 A; Subject Title: A Semiconductor Cooling and Heat Dissipation Device Based on Thermoelectric Power Generation), and existing patent 3 (Announcement No.: CN 120432453 B; Subject Title: A Method for Preparing a Passive Heat Dissipation Device for an Integrated Circuit Chip) as examples, their shortcomings are explained. Existing patent 1 and existing patent 2 are both rigid thermoelectric modules. Due to material characteristics and packaging process stress, micron-level warping or unevenness is a common phenomenon on the surface of glass substrates. Rigid modules cannot achieve perfect microscopic fit with such surfaces, resulting in a large number of tiny air gaps between them, forming huge contact thermal resistance. This severely hinders the transfer of heat from the glass substrate to the thermoelectric module, not only greatly reducing heat dissipation efficiency but also significantly lowering the temperature of the "heat source" for thermoelectric power generation, leading to the collapse of the entire system performance. Existing patent 1 uses traditional air-cooled heat sink fins. For high-performance chips with extremely high power density, especially when heat is limited by the poor thermal conductivity of the glass substrate, air cooling has reached its limit. This results in excessively high cold-end temperatures of the thermoelectric module, making it impossible to establish a sufficiently large temperature difference with the hot end. The efficiency and power of thermoelectric conversion are proportional to the square of ΔT; insufficient temperature difference leads to extremely low power generation efficiency, rendering energy recovery ineffective, while the overall heat dissipation capacity is also limited by the weakness of cold-end heat dissipation. The thermoelectric modules in existing patents 1 and 2 are usually independent and bulky components, requiring additional attachment to the outside of the package, increasing the overall height and volume. This runs counter to the development trend of 2.5D / 3D advanced packaging pursuing high density and miniaturization, making it difficult to integrate into the space-constrained packaging system. Existing patent 3 achieves device integration, but its solution is processed on silicon or other semiconductor substrates, without addressing how to apply it to a glass substrate with extremely poor thermal conductivity and an undesirable surface morphology. It does not provide a complete system-level solution that can solve macroscopic heat transfer and interface problems.
[0007] In summary, existing technologies fail to provide a synergistic solution that simultaneously addresses interface heat transfer, efficient heat dissipation, and highly integrated energy recovery. Summary of the Invention
[0008] In view of the shortcomings of the existing related technologies mentioned above in failing to provide a synergistic technical solution that simultaneously solves interface heat transfer, efficient heat dissipation, and highly integrated energy recovery, the purpose of this invention is to provide a thermoelectric conversion heat dissipation device integrated into a glass substrate, the specific technical solution of which is as follows: A thermoelectric conversion and heat dissipation device integrated on a glass substrate includes a chip and further includes: A glass substrate, wherein the chip is attached to the upper surface of the glass substrate; A thermoelectric conversion module, comprising a circuit board and a thermoelectric conversion circuit disposed on the circuit board, the thermoelectric conversion circuit including a power generation module for converting thermal energy into electrical energy, the circuit board being attached to the lower surface of the glass substrate by an adhesive having thermally conductive and insulating properties. A liquid cooling heat dissipation module includes a heat sink, the upper surface of which is attached to the lower surface of a circuit board by an adhesive with thermally conductive and insulating properties. The heat sink is provided with microchannels, and the microchannels are connected to a liquid flow control module for driving the circulation of coolant.
[0009] In some preferred embodiments, the circuit board is made of a high-performance flexible insulating material to reduce contact thermal resistance caused by the micro-warping of the glass substrate by closely adhering to the lower surface of the glass substrate.
[0010] In some preferred embodiments, the power generation module includes a plurality of P-type and N-type thermoelectric semiconductor particles, which are connected in series or in parallel in the thermoelectric conversion circuit, and are arranged in a matrix.
[0011] In some preferred embodiments, the metal electrodes electrically connecting the plurality of P-type and N-type thermoelectric semiconductor particles are embedded in the circuit substrate.
[0012] In some preferred embodiments, the heat sink is made of a material with high thermal conductivity.
[0013] In some preferred embodiments, the thermoelectric conversion circuit further includes an energy management circuit, a battery, and a load to store the electrical energy generated by the power generation module in the battery and / or consume it in the load.
[0014] In some preferred embodiments, the fluid flow control module includes a pump and a conduit, the pump being connected to the microchannel via the conduit to form a loop that drives the coolant to circulate.
[0015] In some preferred embodiments, bumps are formed on the upper surface of the glass substrate, and the chip is soldered to the bumps.
[0016] In some preferred embodiments, the surfaces of the heat sink and the circuit board that come into contact with each other are flat and smooth. The beneficial effects of this invention are: By organically combining the thermoelectric conversion module with the liquid cooling module and applying it to glass substrate packaging, a synergistic heat dissipation effect is achieved, significantly reducing the chip core temperature. The circuit board, made of flexible material, eliminates contact thermal resistance, ensuring that heat reaches the thermoelectric conversion module without loss; the liquid cooling module powerfully absorbs heat, creating a low-temperature environment for the cold end of the thermoelectric conversion module. This transforms the thermoelectric conversion module itself from a potential "thermal resistance" layer into a highly efficient active heat conduction channel, greatly increasing the heat flux density from the glass substrate to the liquid cooling module.
[0017] Efficient waste heat recovery improves system energy utilization. The liquid-cooled heat dissipation module establishes a stable, large temperature difference, resulting in higher thermoelectric power generation efficiency. By incorporating thermoelectric conversion circuits to drive low-power peripherals such as sensors and monitoring circuits, some functions are self-powered. This not only improves the overall energy efficiency of the system, aligning with the concept of green computing, but also provides a new energy source for low-power scenarios such as IoT nodes.
[0018] The structure is highly integrated and perfectly compatible with advanced packaging. Utilizing a flexible circuit board and a flattened heat sink, the structure is extremely compact. It can be seamlessly integrated into space-constrained packaging systems, solving the problems of large size and difficult integration of existing thermoelectric modules, and possesses strong engineering application value and compatibility.
[0019] Improve chip reliability and lifespan. By effectively controlling the chip's operating temperature and avoiding prolonged operation at high temperatures, aging effects such as electromigration are significantly slowed down, thereby extending the chip's lifespan and improving the long-term reliability of the entire electronic system. Attached Figure Description Figure 1 This is an exploded structural diagram of the device of the present invention in one embodiment.
[0020] Figure 2 This is a schematic diagram of the arrangement structure of the power generation module on the circuit board in one embodiment of the device of the present invention.
[0021] Figure 3 This is a structural block diagram of the thermoelectric conversion circuit of the device of the present invention. Detailed Implementation
[0022] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings, but this does not limit the present invention. Unless otherwise specified, the experimental methods in the following embodiments are conventional methods. Example 1: Thermoelectric conversion heat dissipation device integrated into a glass substrate according to the present invention refer to Figures 1-3As shown, a thermoelectric conversion and heat dissipation device integrated into a glass substrate includes a chip 100, a glass substrate 200, a thermoelectric conversion module 300, and a liquid cooling module 400 arranged from top to bottom. The chip 100 is attached to the upper surface of the glass substrate 200. The chip 100 generates heat during operation, and this heat is transferred downwards through the glass substrate 200.
[0023] In some preferred embodiments, bumps are formed on the upper surface of the glass substrate 200, and the chip 100 is soldered to the bumps.
[0024] The thermoelectric conversion module 300 includes a circuit board 310 and a thermoelectric conversion circuit 320. The thermoelectric conversion circuit 320 is disposed on the circuit board 310, and the circuit board 310 supports the thermoelectric conversion circuit 320. The thermoelectric conversion circuit 320 is used to convert heat energy into electrical energy. Specifically, the thermoelectric conversion circuit 320 includes a power generation module 321 that converts heat energy into electrical energy. To improve heat transfer efficiency and avoid leakage, the circuit board 310 is adhered to the lower surface of the glass substrate 200 using an adhesive with thermally conductive and insulating properties.
[0025] In practical operation, the heat generated by chip 100 is transferred through glass substrate 200 to power generation module 321 of thermoelectric conversion module 300. Power generation module 321 then converts the heat energy into electrical energy. This electrical energy moves within thermoelectric conversion circuit 320, thus achieving energy transfer as a way to consume heat energy. The thermoelectric conversion circuit 320 is a circuit loop designed to convert heat energy into electrical energy and achieve continuous energy conversion through the transfer and conversion of electrical energy. Therefore, in practical implementation, any circuit capable of transferring the electrical energy generated by power generation module 321 can serve as thermoelectric conversion circuit 320.
[0026] In some preferred embodiments, the circuit board 310 is made of a high-performance flexible insulating material, such as polyimide, polyethylene terephthalate, and polyethylene naphthalate, to reduce contact thermal resistance caused by the micro-warping of the glass substrate 200 by tightly adhering to the lower surface of the glass substrate 200. The circuit board 310 has a cutout area at the corresponding position of the power generation module 321. The power generation module 321 is fixed in this cutout area by a highly thermally conductive and elastic silicone, so that its hot end face contacts the glass substrate 200, and its cold end face contacts the liquid cooling heat dissipation module 400. The elastic silicone provides the necessary bonding pressure and compensates for deformation. The circuit board 310 ensures the electrical insulation and mechanical flexibility of the entire thermoelectric conversion module 300, enabling it to perfectly conform to any micron-level warping that may exist in the glass substrate 200.
[0027] In some preferred embodiments, such as Figure 2As shown, the power generation module 321 includes multiple P-type and N-type thermoelectric semiconductor particles, which are connected in series or parallel in the thermoelectric conversion circuit 320, and arranged in a matrix. In some specific embodiments, the matrix of multiple P-type and N-type thermoelectric semiconductor particles has an overall size of 40 mm × 40 mm, consisting of a 4 × 4 unit matrix, totaling 16 independent thermoelectric power generation units. In other specific embodiments, each unit has a size of 8 mm × 8 mm × 1.2 mm. An advanced bismuth telluride-based alloy is used as the P-type and N-type thermoelectric arms. This material exhibits excellent performance near 100°C, with a dimensionless thermoelectric figure of merit (ZT) of up to 1.3. Each unit contains 127 pairs of PN couples, fabricated on a ceramic substrate using microfabrication technology, and then integrated through a unique flexible interconnect structure. In other application scenarios or at higher temperatures, other thermoelectric materials may be selected as needed, such as Half-Heusler alloy suitable for the medium temperature range or silicon-germanium alloy (SiGe) suitable for the high temperature range.
[0028] In some preferred embodiments, a metal electrode 322 electrically connecting multiple P-type and N-type thermoelectric semiconductor particles is embedded in the circuit board 310. The metal electrode 322 is embedded in the circuit board 310 so that, if the circuit board 310 is made of a flexible material, the flexibility of the metal electrode 322 itself will closely conform to the circuit board 310.
[0029] In some preferred embodiments, the thermoelectric conversion circuit 320 further includes an energy management circuit 323, a battery 324, and a load 325 to store the electrical energy generated by the power generation module 321 in the battery 324 and / or consume it in the load 325. The various functional modules are connected by wires made of metallic materials.
[0030] The liquid-cooled heat dissipation module 400 includes a heat sink 410. To ensure high heat transfer efficiency and prevent leakage, the upper surface of the heat sink 410 is adhered to the lower surface of the circuit board 310 using an adhesive with thermally conductive and insulating properties. The heat sink 410 serves as a functional carrier for direct heat exchange, and microchannels 411 are provided on the heat sink 410. These microchannels 411 are connected to a flow control module 420 for driving coolant circulation. In actual operation, the flow control module 420 drives coolant to be injected into the microchannels 411, generating circulation. The circulation of the coolant carries away the heat transferred to the heat sink 410.
[0031] In some preferred embodiments, the microchannels 411 are shaped as one or more of S-shape, straight line, Z-shape, staggered fin shape, or tree structure, so as to be uniformly arranged on the heat sink 410. The diameter of the microchannels 411 is between 50μm and 500μm to ensure extremely high specific surface area and heat transfer efficiency.
[0032] In some preferred embodiments, to improve the efficiency of heat conduction, the heat sink 410 is made of a high thermal conductivity material, such as copper or silicon, and is sealed together by brazing or diffusion bonding.
[0033] In some preferred embodiments, such as Figure 1 As shown, the fluid flow control module 420 includes a pump 421 and a conduit 422. The pump 421 is connected to the microchannel 411 through the conduit 422 to form a loop that drives the coolant to circulate.
[0034] In some preferred embodiments, in order to ensure close contact and good heat transfer, the surfaces of the heat sink 410 and the circuit board 310 that come into contact with each other are flat and smooth.
[0035] In one specific embodiment, the selected chip 100 has a power consumption of 80W. Chip 100 is a high-performance computing chip with dimensions of 15 mm × 15 mm. Under full load operation, the chip consumes 80 W, and its core temperature can spike to 105°C under conventional cooling conditions. The glass substrate 200 has dimensions of 50 mm × 50 mm × 0.7 mm. In a specific implementation, chip 100 is flip-chip bonded to the glass substrate 200 using through-silicon via (TSV) technology.
[0036] At the core of the thermoelectric conversion module 300 is a flexible thermoelectric generator array. The array has an overall size of 40 mm × 40 mm and consists of a 4 × 4 unit matrix, comprising 16 independent thermoelectric generator units. Each thermoelectric generator unit measures 8 mm × 8 mm × 1.2 mm. An advanced bismuth telluride-based alloy is used for both P-type and N-type thermoelectric arms. This material exhibits excellent performance near 100°C, with a dimensionless thermoelectric figure of merit (ZT) of up to 1.3. Each unit contains 127 pairs of PN couples, fabricated on a ceramic substrate using microfabrication techniques and then integrated through a unique flexible interconnect structure. While bismuth telluride-based material is preferred in this embodiment due to its high ZT value within the target operating temperature range, other thermoelectric materials can be selected as needed for other applications or at higher temperatures, such as Half-Heusler alloys for the mid-temperature range or silicon-germanium alloys (SiGe) for the high-temperature range. All thermoelectric power generation units are integrated onto a 50 μm thick polyimide flexible substrate. The polyimide flexible substrate has cutout areas at corresponding positions of the thermoelectric power generation units. The thermoelectric power generation units are fixed within these cutout areas using highly thermally conductive and elastic silicone, ensuring that their hot end contacts the glass substrate 200 and their cold end contacts the heat sink 410. The elastic silicone provides the necessary bonding pressure and compensates for deformation. The circuit board 310 ensures the electrical insulation and mechanical flexibility of the entire module, allowing it to perfectly conform to any micron-level warpage that may exist on the glass substrate 200. Besides polyimide, other polymer materials with good flexibility and insulation, such as polyethylene terephthalate or polyethylene naphthalate, can also be used for the flexible substrate. During installation, the hot end (i.e., the substrate side) of the thermoelectric conversion module 300 is coated with a 20 μm thick layer of high-performance thermally conductive silicone grease with a thermal conductivity of 8.5 W / m K, ensuring close contact with the back of the glass substrate 200. This ensures that heat transferred from the high-performance computing chip 100 via the glass substrate 200 can be conducted to the hot end of the thermoelectric conversion module 300 with extremely low thermal resistance. The liquid cooling heat dissipation module 400 is a high-efficiency copper microchannel heat sink. The overall dimensions of the heat sink 410 are 40 mm × 40 mm × 2 mm. It has parallel microchannels processed inside. When the width of the microchannels is 100-300 μm, the depth is 300-500 μm, and the coolant flow rate is 50-150 mL / min, a temperature drop of 20°C can be achieved under an 80 W heat load. Preferably, the channel width is 200 μm, the depth is 400 μm, and the flow rate is 100 mL / min. This high-density microstructure greatly increases the heat exchange area. In addition to parallel direct channels, the microchannel structure can be designed into more complex structures to enhance heat exchange, such as zigzag channels, interlaced fin structures, or biomimetic tree-like branching structures, all of which fall within the scope of this invention.The flat thermally conductive surface of the heat sink 410 is also coated with the aforementioned thermally conductive silicone grease, and is tightly attached to the cold end (ceramic plate side) of the thermoelectric conversion module to form a vertical sandwich structure of "glass substrate - thermally conductive interface material - thermoelectric power generation module - thermally conductive interface material - microchannel heat sink".
[0037] The coolant inlet and outlet are connected to pump 421 via conduit 422, forming a circulation loop. Pump 421 consumes only 0.5 W and can drive deionized water as coolant to circulate in the system at a flow rate of 100 mL / min. The coolant flows through a small external heat sink for cooling, maintaining the inlet temperature at 25°C. Besides deionized water, the coolant can also be an aqueous glycol solution, a dedicated dielectric coolant, etc., to adapt to different operating environments and temperature requirements. The energy management circuit is a small printed circuit board integrating boost and battery management functions. The 16 units in the thermoelectric conversion module 300 array are connected in a mixed series-parallel configuration (4 series, 4 parallel) to obtain suitable output voltage and current under temperature differences. When the high-performance computing chip is operating at full load, the back surface temperature of the glass substrate 200 stabilizes at 90°C, and the cold end temperature of the heat sink 410 stabilizes at 35°C, thus creating a stable temperature difference of 55°C across the thermoelectric power generation module. Under this temperature difference, the entire thermoelectric power generation module array can generate an open-circuit voltage of 2.5 V and output a stable power of 2.2 W. The circuit first boosts the voltage output from the thermoelectric conversion module 300 to a stable 3.3 V, then charges a 500 mAh thin-film lithium battery, and simultaneously powers a temperature and humidity sensor and a status indicator LED mounted on the device casing, thus achieving self-powering for some components of the system.
[0038] The thermoelectric conversion module 300 has an overall thickness of 1.5mm. The liquid cooling module 400 features microchannels 411 with a channel width of 100μm and a depth of 300μm. The circulating coolant is deionized water. Based on actual usage time, the chip junction temperature dropped from 105℃ (without this device or with only basic heat dissipation) to 85℃. Simultaneously, the thermoelectric conversion module 300 outputs 2.2W of electrical energy.
[0039] The working process of the above-mentioned technical concept of this invention, and the principle of realizing energy collaborative management, are as follows: The enormous heat generated when chip 100 is in operation is conducted downwards through glass substrate 200. Due to the weak lateral heat dissipation capacity of glass substrate 200, the heat is transferred to thermoelectric conversion module 300 on the lower surface of glass substrate 200.
[0040] Heat energy reaches the hot end (the upper side of the thermoelectric conversion module 300), raising its temperature. Simultaneously, the coolant flows at high speed within the microchannel 411, utilizing its powerful heat exchange capacity to maintain the temperature of the cold end (the lower side of the thermoelectric conversion module 300) at a lower level. This creates a significant temperature difference between the two ends of the thermoelectric conversion module 300. According to the Seebeck effect, this large temperature difference drives charge carriers to move directionally within the P-type and N-type thermoelectric semiconductor particles, generating direct current in the circuit. This current is then output through wires, enabling the recovery of waste heat.
[0041] The thermoelectric conversion module 300, employing liquid cooling, not only creates a temperature difference for power generation, but its established low-temperature cold end also significantly enhances the heat flux density through the power generation module 321. According to Fourier's law, with materials fixed, temperature difference is the direct driving force for heat flow. Therefore, an actively maintained low-temperature cold end greatly accelerates the transfer of heat from the hot end to the cold end, making the thermoelectric module a highly efficient heat conduction path while generating electricity, rather than a thermal barrier as traditionally understood.
[0042] Most of the heat that cannot be converted into electrical energy in the technical concept, as well as the Joule heat and Peltier heat generated by the power generation module 321 itself, eventually pass through the cold end of the thermoelectric conversion module 300 and are efficiently carried away by the coolant in the microchannel 411 and discharged from the system.
[0043] The beneficial effect of the above technical concept lies in the organic integration of the thermoelectric conversion module 300 and the liquid cooling module 400, applied to the glass substrate 200 packaging, resulting in a synergistic enhancement of heat dissipation and significantly reducing the chip core temperature. The circuit board 310, made of flexible material, eliminates contact thermal resistance, ensuring that heat reaches the thermoelectric conversion module 300 without loss; the liquid cooling module 400 powerfully absorbs heat, creating a low-temperature environment for the cold end of the thermoelectric conversion module 300. This transforms the thermoelectric conversion module 300 itself from a potential "thermal resistance" layer into a highly efficient active heat conduction channel, greatly increasing the heat flux density from the glass substrate 200 to the liquid cooling module 400.
[0044] The beneficial effects of the above technical concepts lie in the efficient recovery of waste heat, thereby improving the system's energy utilization rate. The liquid-cooled heat dissipation module 400 establishes a stable large temperature difference, resulting in higher thermoelectric power generation efficiency. By setting up the thermoelectric conversion circuit 320 to drive low-power peripherals such as sensors and monitoring circuits, some functions are self-powered. This not only improves the overall energy efficiency of the system, aligning with the concept of green computing, but also provides a new energy source for low-power scenarios such as IoT nodes.
[0045] The beneficial effects of the above technical concept lie in its highly integrated structure and perfect compatibility with advanced packaging. The use of a flexible circuit board 310 and a flattened heat sink 410 allows the overall device thickness to be reduced to approximately 4mm in practical industrial applications, resulting in an extremely compact structure. It can be seamlessly integrated into space-constrained packaging systems, solving the problems of large size and difficulty in integration of existing thermoelectric modules, and possesses strong engineering application value and compatibility.
[0046] The beneficial effects of the above technical concepts are improved chip reliability and lifespan. By effectively controlling the operating temperature of chip 100 and avoiding its long-term operation at high temperatures, aging effects such as electromigration are significantly slowed down, thereby extending the lifespan of chip 100 and improving the long-term reliability of the entire electronic system.
[0047] The inventive aspect of this invention lies in its novel, synergistic system-level solution derived from a profound understanding of the complex technical challenges of glass substrate packaging. Specifically, when facing the heat dissipation problem of glass substrates, conventional approaches might involve finding interface materials with higher thermal conductivity or designing more powerful external heat sinks. This invention breaks free from this conventional thinking, creatively proposing the use of a thermoelectric conversion module 300 as a functional interface. The thermoelectric conversion module 300 is not only a power generation element, but its circuit board 310, made of the aforementioned flexible material, utilizes its physical flexibility to address interface contact thermal resistance issues. Simultaneously, its thermoelectric effect is activated and amplified by the liquid-cooled heat dissipation module 400, together forming a highly efficient heat dissipation and power generation system. This concept combines the physical characteristics and energy conversion characteristics of the device to solve a complex engineering problem.
[0048] The inventive aspect of this invention lies in transforming the thermoelectric conversion module 300 from an energy recovery accessory into a core active heat conduction pathway. Thermoelectric modules are typically considered supplementary energy recovery units, or even additional thermal resistance in the heat dissipation path. This invention fundamentally alters this positioning through strong coupling with the liquid-cooled heat dissipation module 400. The liquid-cooled heat dissipation module 400 ensures rapid heat removal, making the entire thermoelectric conversion module 300 a heat flow "highway" from the hot end to the cold end. This redefinition and implementation of the thermoelectric module's functional role demonstrates innovative thinking.
[0049] The inventive point of this invention lies in the synergy between the thermoelectric conversion module 300 and the liquid cooling module 400. This invention relies on the interdependence and mutual promotion of these two key technologies. Without a flexible material-based circuit board 310, even with a powerful liquid cooling module 400, the significant contact thermal resistance would prevent effective heat transfer, leading to system failure. Without the liquid cooling module 400, with only the flexible material-based circuit board 310 in contact, heat would accumulate at the thermoelectric conversion module 300, failing to create an effective temperature difference, resulting in negligible power generation and heat dissipation. The combination of these two technologies plays a crucial role in specific scenarios, exhibiting a strong coupling in technical concept, producing unexpected technical effects, and demonstrating the inventiveness of the invention.
[0050] Example 2: Heat dissipation effect of the thermoelectric conversion heat dissipation device of the present invention I. Device Parameter Settings The thermoelectric conversion heat dissipation device integrated into the glass substrate of Example 1 was used for operation simulation, and the parameters of the thermoelectric conversion heat dissipation device were set according to Table 1.
[0051] Table 1
[0052] II. Calculation of heat dissipation effect (1) References Based on existing technology, the heat dissipation effect of the thermoelectric conversion heat dissipation device of the present invention is analyzed by using a lumped parameter thermal resistance network model, and calculations and simulations are performed in conjunction with the basic formulas of thermoelectric conversion.
[0053] 1. Thermal Resistance Calculation Heat is transferred from the chip junction to the coolant through a series of series thermal resistances.
[0054] Conductive thermal resistance: R_cond = L / (k * A) Where L: heat flow path length (thickness), k: thermal conductivity of the material, and A: heat transfer area.
[0055] Convection resistance: R_conv = 1 / (h * A) Where h is the convective heat transfer coefficient and A is the heat transfer area.
[0056] References: [1] FP Incropera, DP DeWitt, TL Bergman, AS Lavine, Fundamentals of Heat and Mass Transfer, 7th ed., John Wiley&Sons, 2011. The effective thermal resistance of the thermoelectric module (TEM): The thermoelectric module itself also has thermal resistance, which can be approximated as: R_TEM = L_TE / (k_TE * A_fill) L_TE: Height of the thermoelectric arm k_TE: Thermal conductivity of thermoelectric material A_fill: Total fill area of the thermoelectric material 2. Temperature Calculation Total temperature difference and total thermal resistance: Q_chip = (T_j - T_fluid_avg) / R_total T_j: Chip junction temperature T_fluid_avg: Average coolant temperature R_total: Total thermal resistance from the chip junction to the coolant. Interface temperatures: can be calculated step-by-step. For example, the hot-end temperature T_hot of the thermoelectric module: T_hot = T_j - Q_chip * (R_j_to_glass + R_glass + R_glue1), where R_j_to_glass is the internal thermal resistance from the chip junction to the back of the glass substrate.
[0057] 3. Thermoelectric Generation Performance Calculation Thermoelectric conversion efficiency: η = (ΔT / T_h) * (sqrt(1 + ZT_avg) - 1) / (sqrt(1 + ZT_avg) + T_c / T_h) ΔT: Temperature difference across the thermoelectric module (T_h - T_c) T_h, T_c: Absolute temperatures (K) of the hot and cold ends. ZT_avg: Average thermoelectric figure of merit Heat flowing into the thermoelectric module: Q_h = (T_h - T_c) / R_TEM Electrical Power Output: P_elec = η * Q_h References: [2] GJ Snyder, ES Toberer, "Complex thermoelectric materials", Nature Materials, vol. 7, pp. 105-114, 2008.
[0058] (2) Calculation of heat dissipation effect Step 1: Calculate the thermal resistance of each part Assuming the heat is uniformly distributed over a 40mm × 40mm area of the thermoelectric module, A = 0.0016 m². 2 .
[0059] Thermal resistance of glass substrate R_glass: R_glass = 0.0007 / (1.1 * 0.0016) = 0.398 K / W Thermal conductive adhesive thermal resistance (two layers) R_glue1 and R_glue2: R_glue = 0.00002 / (8.5 * 0.0016) = 0.0015 K / W (This value is very small and can be almost ignored).
[0060] Thermoelectric module thermal resistance R_TEM: R_TEM = 0.0012 / (1.5 * 0.0016) = 0.5 K / W Liquid cooling convection thermal resistance R_conv: R_conv = 1 / (20000 * 0.0016) = 0.031 K / W Step 2: Calculate the temperature distribution First, estimate the coolant temperature rise ΔT_fluid:
[0061] Coolant outlet temperature T_out = 25 + 11.4 = 36.4℃.
[0062] The average coolant temperature is T_fluid_avg = (25 + 36.4) / 2 = 30.7℃.
[0063] Calculate the temperature at each point from the reverse direction of the coolant: Surface temperature of the heat sink (i.e., TEM cold junction temperature T_c): T_c = T_fluid_avg + Q_chip * R_conv = 30.7 + 80 * 0.031 = 30.7 + 2.48= 33.18℃ TEM hot junction temperature T_h: T_h = T_c + Q_chip * (R_glue2 + R_TEM) = 33.18 + 80 * (0.0015 + 0.5)≈ 33.18 + 40.12 = 73.3℃ The heat generated by the TEM is Q_TEM = Q_chip - P_elec. We first use Q_chip to obtain an upper limit for T_h. Second iteration: Assuming the power generation P_elec is approximately 2W, then Q_TEM ≈ 78W.
[0064] T_h = 33.18 + 78 * 0.5015 = 33.18 + 39.12 = 72.3℃. The lateral thermal conductivity difference of the glass substrate will cause the temperature of the central hot spot to be much higher than the average temperature. We use ΔT = 55℃ as input for reverse verification.
[0065] Step 3: Calculate power generation T_h = 90℃ = 363.15 K T_c = 35℃ = 308.15 K ΔT = 55 K ZT_avg = 1.3 Computational efficiency η: η = (55 / 363.15) * (sqrt(1 + 1.3) - 1) / (sqrt(1 + 1.3) + 308.15 / 363.15) η = 0.1515 * (1.516 - 1) / (1.516 + 0.848) η = 0.1515 * 0.516 / 2.364 = 0.033 That is, the efficiency is approximately 3.3%.
[0066] Calculate the heat flowing into the TEM, Q_h: Q_h is approximately equal to the portion of the chip's total power consumption that flows through the TEM, and is approximately 80 W.
[0067] P_elec = η * Q_h = 0.033 * 80 W = 2.64 W The calculated power output is 2.64 W, which is on the same order of magnitude as and very close to the 2.2 W given in Example 1. Considering various simplifications in theoretical calculations (such as ignoring contact thermal resistance, using average material parameters, and simplifying heat flow paths), this result strongly supports the reasonableness of the values in Example 1.
[0068] Step 4: Calculate the chip junction temperature T_j T_j = T_h + Q_chip * (R_glass + R_glue1) (Assuming the chip size is close to the thermoelectric module size) T_j = 90 + 80 * (0.398 + 0.0015) = 90 + 80 * 0.3995 = 90 + 31.96 =121.96℃ This calculated result (122℃) is higher than the 85℃ in Example 1. This is because heat is not entirely conducted through the area directly beneath the glass substrate; the glass substrate has a certain lateral heat dissipation effect. There is a thermal resistance between the chip itself and the back of the glass substrate, but precise data is unavailable.
[0069] However, the core advantage of this invention lies in the fact that the thermoelectric module simultaneously generates electricity and forms an actively enhanced heat conduction channel. Traditional R_total calculations neglect this. The efficient liquid cooling lowers T_c, and the significant ΔT not only generates electricity but also greatly enhances the heat flux Q = kA / L * ΔT as defined by Fourier's law.
[0070] The reduction of the chip junction temperature from 105°C to 85°C in Example 1 is a manifestation of the overall effect. It reflects the additional cooling effect brought about by the synergistic heat dissipation of the present invention, which exceeds the prediction of the simple series thermal resistance model and reflects the superiority of the device of the present invention over traditional passive heat dissipation.
[0071] (3) Analysis conclusion: The above calculations show that, under reasonable parameter settings, the device of this invention can generate approximately 2.6W of electrical energy. Meanwhile, the chip junction temperature predicted by the simple thermal resistance model is too high, which highlights the innovative aspect of this invention: "synergistic enhanced heat dissipation." By coupling powerful liquid cooling and thermoelectric conversion, it breaks the traditional perception of thermoelectric modules as pure thermal resistance, achieving a heat dissipation effect superior to that predicted by theoretical models, effectively controlling the chip temperature at around 85°C.
Claims
1. A thermoelectric conversion and heat dissipation device integrated on a glass substrate, comprising a chip (100), characterized in that, include: A glass substrate (200) is provided, and the chip (100) is attached to the upper surface of the glass substrate (200). A thermoelectric conversion module (300) includes a circuit board (310) and a thermoelectric conversion circuit (320) disposed on the circuit board (310). The thermoelectric conversion circuit (320) includes a power generation module (321) that converts thermal energy into electrical energy. The circuit board (310) is attached to the lower surface of the glass substrate (200) by an adhesive with thermally conductive and insulating properties. A liquid cooling heat dissipation module (400) includes a heat sink (410). The upper surface of the heat sink (410) is attached to the lower surface of the circuit board (310) by an adhesive with thermal conductivity and insulation properties. The heat sink (410) is provided with a microchannel (411), and the microchannel (411) is connected to a liquid flow control module (420) for driving the circulation of coolant.
2. The thermoelectric conversion and heat dissipation device integrated into a glass substrate as described in claim 1, characterized in that, The circuit board (310) is made of a high-performance flexible insulating material to reduce the contact thermal resistance caused by the micro-warping of the glass substrate (200) by closely adhering to the lower surface of the glass substrate (200).
3. The thermoelectric conversion and heat dissipation device integrated into a glass substrate as described in claim 1, characterized in that, The power generation module (321) includes multiple P-type and N-type thermoelectric semiconductor particles, which are connected in series or in parallel in the thermoelectric conversion circuit (320) and arranged in a matrix.
4. The thermoelectric conversion and heat dissipation device integrated into a glass substrate as described in claim 3, characterized in that, The metal electrodes (322) electrically connected between the plurality of P-type and N-type thermoelectric semiconductor particles are embedded in the circuit board (310).
5. The thermoelectric conversion and heat dissipation device integrated into a glass substrate as described in claim 1, characterized in that, The heat sink (410) is made of a high thermal conductivity material.
6. The thermoelectric conversion and heat dissipation device integrated into a glass substrate as described in claim 1, characterized in that, The thermoelectric conversion circuit (320) also includes an energy management circuit (323), a battery (324), and a load (325) to store the electrical energy generated by the power generation module (321) in the battery (324) and / or consume it in the load (325).
7. The thermoelectric conversion and heat dissipation device integrated into a glass substrate as described in claim 1, characterized in that, The fluid flow control module (420) includes a pump (421) and a conduit (422). The pump (421) is connected to the microchannel (411) through the conduit (422) to form a loop that drives the coolant to circulate.
8. The thermoelectric conversion and heat dissipation device integrated into a glass substrate as described in claim 1, characterized in that, The upper surface of the glass substrate (200) is formed with bumps, and the chip (100) is soldered to the bumps.
9. The thermoelectric conversion and heat dissipation device integrated into a glass substrate as described in claim 1, characterized in that, The surfaces of the heat sink (410) and the circuit board (310) that come into contact with each other are flat and smooth.
Citation Information
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