Double-sided heat dissipation power device
By employing double-sided heat dissipation power devices in the TO-247 package structure and utilizing the stacked packaging of AMB board and high thermal conductivity insulation layer, the problems of poor heat dissipation and high stray inductance are solved, achieving a synergistic effect of high-efficiency heat dissipation and low stray inductance, thus improving the performance of power devices.
Patent Information
- Application Number
- CN202511760894.9
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-11-27
- Publication Date
- 2026-02-17
AI Technical Summary
The TO-247 package structure has poor heat dissipation, resulting in low power density per transistor, and the stray inductance caused by the bonding wires increases the switching losses of the power module.
The device employs a double-sided heat dissipation power device structure, including a first AMB board and a second AMB board. The chip and pins are packaged by stacking copper layers and insulating layers to form a double-sided heat dissipation path. The heat dissipation efficiency is improved by using a silicon nitride insulating layer with high thermal conductivity. At the same time, the parasitic capacitance of the bonding wires is avoided, and the current path is shortened to reduce stray inductance.
It improves heat dissipation efficiency, reduces stray inductance, enhances the heat dissipation efficiency and switching characteristics of power devices, and increases power density.
Smart Images
Figure CN121548302A_ABST
Abstract
Description
Technical Field
[0001] This invention relates to the field of power device technology, and more particularly to double-sided heat dissipation power devices. Background Technology
[0002] like Figure 1 and Figure 2 As shown, the TO-247 package structure typically includes a copper base plate and a chip 3 and functional pins 4 soldered onto the copper base plate. The chip 3 can be an IGBT chip 3 or a SiC chip 3. The chip 3 and functional pins 4 are bonded together by aluminum bonding wires. The molding compound encapsulates the chip 3, aluminum bonding wires 6 and pins 4.
[0003] When using the TO-247 package structure, an additional insulating pad needs to be added to the bottom of the copper base plate before soldering the insulating pad to the heat sink 5. However, the thermal conductivity of the insulating pad is currently very low, around 3W / mk, resulting in poor heat dissipation and thus a low power density per tube.
[0004] Meanwhile, the numerous bonding wires introduce stray inductance, increasing the switching losses of the power module and affecting the performance of the power devices.
[0005] It should be noted that the information disclosed in the background section above is only used to enhance the understanding of the background of this disclosure, and therefore may include information that does not constitute prior art known to those skilled in the art. Summary of the Invention
[0006] To address the shortcomings of existing technologies, this invention discloses a double-sided heat dissipation power device to solve the problems of poor heat dissipation effect and low single-tube power density in the TO-247 package structure when connected to the heat sink 5 via an insulating pad.
[0007] The technical solution adopted in this invention is as follows: A double-sided heat dissipation power device includes: a first AMB board, which includes a first upper copper layer, a first insulating layer, and a first lower copper layer arranged sequentially from top to bottom; a second AMB board disposed below the first AMB board, which includes a second upper copper layer, a second insulating layer, and a second lower copper layer arranged sequentially from top to bottom, with a notch at the upper end of the second upper copper layer; a chip and pins respectively disposed within the notch, wherein the upper end of the chip is electrically connected to the first end of a portion of the pins through a copper area on the first lower copper layer, and the lower end of the chip is electrically connected to the first end of another portion of the pins through a copper area on the second upper copper layer, and the second end of the pins extends out from the side of the first AMB board and the second AMB board.
[0008] A further technical solution is that the notch includes a first notch and a second notch formed on the upper end of the second upper copper layer. The side of the first notch is connected to the external space of the second AMB board. The pin is disposed in the first notch, and the upper end of the pin is flush with the upper end of the second upper copper layer. The second notch is located inside the first notch and the outside of the second notch is connected to the first notch. The chip is disposed in the second notch, and the upper end of the chip is flush with the upper end of the second upper copper layer.
[0009] A further technical solution is that the chip has a gate, a power source, and a drive source on the front side, and a drain on the back side. The pins include a G pin, a GS pin, an S pin, and a D pin. A first copper region, a second copper region, a third copper region, and a fourth copper region are disposed on the first lower copper layer. The first copper region, the second copper region, the third copper region, and the fourth copper region are mutually insulated. The gate of the chip is electrically connected to the first end of the G pin through the first copper region. The power source of the chip is electrically connected to the first end of the S pin through the second copper region. The drive source of the chip is electrically connected to the first end of the GS pin through the third copper region. The first end of the D pin is connected to the fourth copper region.
[0010] A further technical solution is as follows: a fifth copper region, a sixth copper region, a seventh copper region, and an eighth copper region are disposed on the second upper copper layer, and the fifth copper region, the sixth copper region, the seventh copper region, and the eighth copper region are mutually insulated; the fifth copper region, the sixth copper region, and the seventh copper region are located within the first notch; the lower end of the first end of the G pin is connected to the fifth copper region; the lower end of the first end of the GS pin is connected to the sixth copper region; the lower end of the first end of the S pin is connected to the seventh copper region; the eighth copper region is located within the first notch and the second notch; the chip is disposed on the upper end of the eighth copper region; the drain of the chip is connected to the first end of the D pin through the eighth copper region.
[0011] A further technical solution is that the upper and lower ends of the first end of the pin are soldered to the corresponding copper area; the upper and lower ends of the chip are respectively soldered to the corresponding copper area.
[0012] A further technical solution is that the first lower copper layer is soldered to the upper end of the second upper copper layer.
[0013] A further technical solution is that a first screw hole is vertically formed through the first upper copper layer, the first insulating layer, and the first lower copper layer on the first AMB board, and a second screw hole is vertically formed through the second upper copper layer, the second insulating layer, and the second lower copper layer on the second AMB board. The first screw hole and the second screw hole have the same inner diameter and are coaxially arranged.
[0014] A further technical solution is that the chip is a TO-247 packaged chip.
[0015] A further technical solution is that the first insulating layer and the second insulating layer are made of silicon nitride material.
[0016] A further technical solution is that the double-sided heat dissipation power device also includes a heat sink, which is disposed at the lower end of the second AMB board.
[0017] The beneficial effects of the embodiments of the present invention are as follows: (i) The double-sided heat dissipation power device of the present invention is constructed by stacking a first AMB board and a second AMB board, and then placing the chip and pins between the first AMB board and the second AMB board. The chip is electrically connected to the pins through the copper area on the first AMB board and the second AMB board, thus completing the chip packaging. The heat generated by the chip can be transferred sequentially through the first lower copper layer, the first insulating layer and the first upper copper layer of the first AMB board, and can also be dissipated through the second upper copper layer, the second insulating layer and the second lower copper layer of the second AMB board, forming a double-sided heat dissipation path and improving heat dissipation efficiency.
[0018] (ii) Further welding the chip to the copper area on the first AMB board and the second AMB board avoids the parasitic capacitance problem of the bonding wire, shortens the vertical path of current input and output, reduces the current loop area, effectively reduces stray inductance, reduces switching losses, and improves the switching characteristics of power devices.
[0019] The power density of packaged power devices is improved through the combined effect of high heat dissipation efficiency and low stray inductance. Attached Figure Description
[0020] Figure 1 This is a top view of a power device in the prior art.
[0021] Figure 2 This is a front view schematic diagram of a power device in the prior art.
[0022] Figure 3 This is a front view of the double-sided heat dissipation power device of the present invention.
[0023] Figure 4 This is a top view of the second AMB board in the double-sided heat dissipation power device of the present invention.
[0024] Figure 5 This is a top view of the first AMB board in the double-sided heat dissipation power device of the present invention.
[0025] Figure 6 This is a top view of the double-sided heat dissipation power device of the present invention.
[0026] Figure 7 This is a front view of the double-sided heat dissipation power device of the present invention after the heat sink is installed.
[0027] In the picture: 1. First AMB board; 11. First upper copper layer; 12. First insulating layer; 13. First lower copper layer; 131. First copper area; 132. Second copper area; 133. Third copper area; 134. Fourth copper area; 14. First screw hole; 2. Second AMB board; 21. Second upper copper layer; 211. Fifth copper area; 212. Sixth copper area; 213. Seventh copper area; 214. Eighth copper area; 215. First notch; 216. Second notch; 22. Second insulating layer; 23. Second lower copper layer; 24. Second screw hole; 3. Chip; 31. Gate; 32. Power source; 33. Driver source; 4. Pin; 41. G pin; 42. GS pin; 43. S pin; 44. D pin; 5. Heat sink; 6. Aluminum bonding wire. Detailed Implementation
[0028] To further illustrate the technical means and effects of the present invention in achieving its intended purpose, the following detailed description of the specific implementation methods, structures, features, and effects of the present invention, in conjunction with the accompanying drawings and preferred embodiments, is provided below.
[0029] Example: This embodiment discloses a double-sided heat dissipation power device.
[0030] The double-sided heat dissipation power device includes a first AMB board 1, a second AMB board 2, a chip 3, and pins 4.
[0031] like Figure 3 As shown, the first AMB board 1 includes a first upper copper layer 11, a first insulating layer 12, and a first lower copper layer 13 arranged sequentially from top to bottom. The second AMB board 2 is disposed below the first AMB board 1. The second AMB board 2 includes a second upper copper layer 21, a second insulating layer 22, and a second lower copper layer 23 arranged sequentially from top to bottom. A notch is formed at the upper end of the second upper copper layer 21. For example, the first lower copper layer 13 is soldered to the upper end of the second upper copper layer 21. The first insulating layer 12 and the second insulating layer 22 are made of silicon nitride material with a thermal conductivity of 85 W / (m·K), which is much higher than the thermal conductivity of the insulating gasket (3 W / (m·K)).
[0032] like Figure 3 As shown, chip 3 and pin 4 are respectively disposed in the notch. The upper end of chip 3 is electrically connected to the first end of a portion of pin 4 through the copper area on the first lower copper layer 13. The lower end of chip 3 is electrically connected to the first end of another portion of pin 4 through the copper area on the second upper copper layer 21. The second end of pin 4 extends out of the side of the first AMB board 1 and the second AMB board 2.
[0033] like Figure 4As shown, for example, chip 3 is a TO-247 packaged chip 3. Chip 3 has a gate 31, a power source 32, and a drive source 33 on its front side, and a drain (not shown) on its back side. Pins 4 include a G pin 41, a GS pin 42, an S pin 43, and a D pin 44. Notches include a first notch 215 and a second notch 216 formed on the upper end of the second upper copper layer 21. The side of the first notch 215 communicates with the external space of the second AMB board 2. Pins 4 are disposed within the first notch 215, and the upper end of pins 4 is flush with the upper end of the second upper copper layer 21. The second notch 216 is located inside the first notch 215 and its outer side communicates with the first notch 215. Chip 3 is disposed within the second notch 216, and the upper end of chip 3 is flush with the upper end of the second upper copper layer 21.
[0034] like Figure 5 and Figure 6 As shown, further, a first copper region 131, a second copper region 132, a third copper region 133, and a fourth copper region 134 are disposed on the first lower copper layer 13. The first copper region 131, the second copper region 132, the third copper region 133, and the fourth copper region 134 are insulated from each other. The gate 31 of the chip 3 is electrically connected to the first end of the G pin 41 through the first copper region 131. The power source 32 of the chip 3 is electrically connected to the first end of the S pin 43 through the second copper region 132. The drive source 33 of the chip 3 is electrically connected to the first end of the GS pin 42 through the third copper region 133. The drain of the chip 3 is connected to the first end of the D pin 44 through the second upper copper layer 21. The first end of the D pin 44 is connected to the fourth copper region 134.
[0035] like Figure 4 and Figure 6 As shown, further, a fifth copper region 211, a sixth copper region 212, a seventh copper region 213, and an eighth copper region 214 are disposed on the second upper copper layer 21. These copper regions 211, 212, 213, and 214 are mutually insulated. The fifth, sixth, and seventh copper regions 211, 212, and 213 are located within the first notch 215. The lower end of the first end of the G pin 41 is connected to the fifth copper region 211, the lower end of the first end of the GS pin 42 is connected to the sixth copper region 212, and the lower end of the first end of the S pin 43 is connected to the seventh copper region 213. The eighth copper region 214 is located within the first notch 215 and the second notch 216. The chip 3 is disposed on the upper end of the eighth copper region 214, and the drain of the chip 3 is connected to the first end of the D pin 44 through the eighth copper region 214. For example, the upper and lower ends of the first end of the pin 4 are soldered to the corresponding copper regions. The upper and lower ends of the chip 3 are respectively soldered to the corresponding copper regions.
[0036] like Figure 3As shown, further, a first screw hole 14 is vertically formed through the first upper copper layer 11, the first insulating layer 12, and the first lower copper layer 13 on the first AMB board 1, and a second screw hole 24 is vertically formed through the second upper copper layer 21, the second insulating layer 22, and the second lower copper layer 23 on the second AMB board 2. The first screw hole 14 and the second screw hole 24 have the same inner diameter and are coaxially arranged, which facilitates the fixing and alignment of the first AMB board 1 and the second AMB board 2, and ensures the yield of power devices.
[0037] like Figure 7 As shown, the double-sided heat dissipation power device further includes a heat sink 5, which is disposed at the lower end of the second AMB board 2. Specifically, the heat sink 5 is welded to the second lower copper layer 23. Since the second lower copper layer 23 is insulated from the internal current loop, the second lower copper layer 23 can be directly welded or fixed to the heat sink 5, and the insulation layer has a high thermal conductivity, which greatly improves the heat dissipation efficiency and saves costs.
[0038] In this embodiment, by stacking the first AMB board 1 and the second AMB board 2, and then placing the chip 3 and pins 4 between the first AMB board 1 and the second AMB board 2, the chip 3 is electrically connected to the pins 4 through the copper areas on the first AMB board 1 and the second AMB board 2, thus completing the packaging of the chip 3. The heat generated by the chip 3 can be transferred sequentially through the first lower copper layer 13, the first insulating layer 12 and the first upper copper layer 11 of the first AMB board 1, and can also be dissipated through the second upper copper layer 21, the second insulating layer 22 and the second lower copper layer 23 of the second AMB board 2, forming a double-sided heat dissipation path and improving heat dissipation efficiency.
[0039] Meanwhile, chip 3 is soldered to the copper areas on the first AMB board 1 and the second AMB board 2, avoiding the parasitic capacitance problem of the bonding wires. The input path is from the copper area of the second upper copper layer 21 to chip 3, and the output path is from the copper area of the first lower copper layer 13 to chip 3. The vertical path is only the thickness of chip 3 itself and the solder, which shortens the vertical path of current input and output, reduces the current loop area, effectively reduces stray inductance, reduces switching losses, and improves the switching characteristics of power devices.
[0040] The power density of packaged power devices is improved through the combined effect of high heat dissipation efficiency and low stray inductance.
[0041] The above description is merely a preferred embodiment of the present invention and is not intended to limit the present invention in any way. Although the present invention has been disclosed above with reference to preferred embodiments, it is not intended to limit the present invention. Any person skilled in the art can make some modifications or alterations to the above-disclosed technical content to create equivalent embodiments without departing from the scope of the present invention. Any simple modifications, equivalent changes and alterations made to the above embodiments based on the technical essence of the present invention without departing from the scope of the present invention shall still fall within the scope of the present invention.
Claims
1. A double-sided heat dissipating power device, characterized in that, The double-sided heat dissipation power device comprises: a first AMB plate comprising a first upper copper layer, a first insulating layer and a first lower copper layer arranged in sequence from top to bottom; a second AMB plate arranged at the lower end of the first AMB plate, comprising a second upper copper layer, a second insulating layer and a second lower copper layer arranged in sequence from top to bottom, and a notch being formed at the upper end of the second upper copper layer; a chip and pins arranged in the notch respectively, the upper end of the chip being electrically connected to the first end of a part of the pins through the copper area on the first lower copper layer, the lower end of the chip being electrically connected to the first end of another part of the pins through the copper area on the second upper copper layer, and the second end of the pins extending out of the side of the first AMB plate and the second AMB plate.
2. The double-sided heat dissipation power device of claim 1, wherein: The notch comprises a first notch and a second notch, the first notch being formed at the upper end of the second upper copper layer and the side of the first notch being in communication with the external space of the second AMB plate, the pins being arranged in the first notch, and the upper end of the pins being flush with the upper end of the second upper copper layer; the second notch being located inside the first notch and the external side of the second notch being in communication with the first notch, and the chip being arranged in the second notch, and the upper end of the chip being flush with the upper end of the second upper copper layer.
3. The double-sided heat dissipation power device of claim 1, wherein: The front of the chip has a gate, a power source and a driving source, the back of the chip has a drain, the pins comprise G pins, GS pins, S pins and D pins, the first lower copper layer has a first copper area, a second copper area, a third copper area and a fourth copper area arranged thereon, the first copper area, the second copper area, the third copper area and the fourth copper area being insulated from each other, the gate of the chip being electrically connected to the first end of the G pins through the first copper area, the power source of the chip being electrically connected to the first end of the S pins through the second copper area, the driving source of the chip being electrically connected to the first end of the GS pins through the third copper area, and the first end of the D pins being connected to the fourth copper area.
4. The double-sided heat dissipation power device of claim 3, wherein: The second upper copper layer has a fifth copper area, a sixth copper area, a seventh copper area and an eighth copper area arranged thereon, the fifth copper area, the sixth copper area, the seventh copper area and the eighth copper area being insulated from each other; the fifth copper area, the sixth copper area and the seventh copper area being located in the first notch, the lower end of the first end of the G pins being connected to the fifth copper area, the lower end of the first end of the GS pins being connected to the sixth copper area, and the lower end of the first end of the S pins being connected to the seventh copper area; the eighth copper area being located in the first notch and the second notch, the chip being arranged at the upper end of the eighth copper area, and the drain of the chip being connected to the first end of the D pins through the eighth copper area.
5. The double-sided heat dissipation power device of claim 4, wherein: The upper end and the lower end of the first end of the pins are welded to the corresponding copper areas, and the upper end and the lower end of the chip are welded to the corresponding copper areas.
6. The double-sided heat dissipation power device of claim 1, wherein: The first lower copper layer is welded to the upper end of the second upper copper layer.
7. The double-sided heat dissipation power device of claim 1, wherein: A first screw hole vertically penetrating the first upper copper layer, the first insulating layer and the first lower copper layer is formed on the first AMB plate, and a second screw hole vertically penetrating the second upper copper layer, the second insulating layer and the second lower copper layer is formed on the second AMB plate, the inner diameters of the first screw hole and the second screw hole are the same, and the first screw hole and the second screw hole are coaxially arranged.
8. The double-sided heat dissipation power device of claim 1, wherein: The chip is a TO-247 packaged chip.
9. The double-sided heat dissipation power device of claim 1, wherein: The first insulating layer and the second insulating layer are made of silicon nitride material.
10. The double-sided heat dissipation power device of claim 1, wherein, The double-sided heat dissipation power device further comprises a heat sink arranged at the lower end of the second AMB plate.