Gas supply system, and process equipment and process method of semiconductor device

Abstract

The invention discloses a gas supply system, process equipment of a semiconductor device and a process method of the semiconductor device. The gas supply system comprises a gas storage tank used for storing a gaseous reaction source, and a valve is arranged below the gas storage tank; and the baking oven is located above the spraying plate, the gas storage tank is stored in the baking oven, and a mirror surface structure is arranged on the inner wall of the baking oven and used for reflecting heat radiated to the inner wall back to the gas storage tank so as to heat the gaseous reaction source. According to the invention, the reaction distance can be shortened to the greatest extent, and the pressure drop of the reaction source in the transmission process is reduced, so that the injection capacity in the technological process is improved, the filling effect of the deep groove is improved, the condensation condition of a transmission inflection point and a heating dead zone can be avoided, and the thermal stability of the whole gas supply system is improved.

Description

Technical Field

[0001] This invention relates to the technical field of semiconductor manufacturing, specifically to a gas supply device, a semiconductor device process equipment, a semiconductor device process method, and a computer-readable storage medium. Background Technology

[0002] Currently, in deep trench thin film deposition processes, the gas reservoir is often located far from the process chamber. During this long-distance gas transport from the reservoir to the process chamber, the gas loses energy due to overcoming flow resistance and inertia, resulting in a pressure drop. This ultimately manifests as a reduced ejection capability upon entering the process chamber. Reduced ejection capability of the reaction source during the process prevents it from reaching the bottom of the trench on the substrate, leading to incomplete trench filling, failure to form the target thin film structure, and consequently, reduced product yield, decreased reliability, and even device failure.

[0003] Furthermore, the entire reaction environment also affects the process outcome. In existing technologies, heating tape is typically used to wrap the process piping for heat transfer. However, at bends in the piping and in unwrapped dead zones, the ambient temperature is unstable, easily causing condensation of the reaction source, leading to particulate contamination and affecting the process results. Moreover, in some process requirements, all gases need to be preheated. Therefore, wrapping all process piping with heating tape would require numerous heating paths, occupying a large space, and also causing pressure drop issues at the reaction source due to excessively long piping, hindering the achievement of good deep trench filling and affecting film formation consistency.

[0004] In order to solve the above-mentioned problems in the prior art, there is an urgent need in the field for an improved gas supply system that can shorten the reaction distance to the greatest extent, reduce the pressure drop of the reaction source during the transmission process, thereby improving the injection capability in the process, enhancing the filling effect of deep trenches, and also avoiding condensation at the transmission inflection point and heating dead zone, thus improving the thermal stability of the entire gas supply system. Summary of the Invention

[0005] The following provides a brief overview of one or more aspects to offer a basic understanding of them. This overview is not an exhaustive summary of all conceived aspects, nor is it intended to identify key or decisive elements of all aspects, nor to define the scope of any or all aspects. Its sole purpose is to present some concepts of one or more aspects in a simplified form as a prelude to the more detailed descriptions that follow.

[0006] To overcome the aforementioned deficiencies in the prior art, the present invention provides a gas supply system, a semiconductor device process equipment, a semiconductor device process method, and a computer-readable storage medium, which can minimize the reaction distance, reduce the pressure drop of the reaction source during the transmission process, thereby improving the jetting capability in the process, enhancing the filling effect of deep trenches, and also avoiding condensation at transmission inflection points and heating dead zones, thus improving the thermal stability of the entire gas supply system.

[0007] Specifically, the gas supply system provided by the first aspect of the present invention includes: a gas storage tank for storing a gaseous reaction source, the outlet of which is provided with a valve; and a baking oven located above a spray plate, wherein the gas storage tank is stored inside the oven, and the inner wall of the baking oven is provided with a mirror structure for reflecting the heat radiated to the inner wall back to the gas storage tank to heat the gaseous reaction source.

[0008] Furthermore, the semiconductor device process equipment provided according to the second aspect of the present invention includes: a process chamber having a spray plate disposed above its interior, and a substrate to be processed placed below the spray plate, wherein the substrate surface has trenches; and the gas supply system provided according to the first aspect of the present invention, located above the spray plate, for spraying a gaseous reaction source onto the substrate so that it reaches the bottom of the trench and fills the trench.

[0009] Furthermore, the process method for the semiconductor device provided in the third aspect of the present invention is implemented via the process equipment for the semiconductor device provided in the second aspect of the present invention. The process method includes the following steps: introducing a carrier gas into a gas supply system in the process equipment for the semiconductor device, so that it carries a gaseous reaction source in a target gas storage tank into a process chamber at a first flow rate; and in response to the completion of the introduction of the gaseous reaction source, introducing a guide gas into the gas supply system, so that it flows unidirectionally in a manifold at a second flow rate until the trench filling process is completed.

[0010] Furthermore, according to a fourth aspect of the present invention, a computer-readable storage medium is provided having computer instructions stored thereon. When the computer instructions are executed by a processor, a process method for implementing the semiconductor device described above according to the third aspect of the present invention is implemented. Attached Figure Description

[0011] The above-described features and advantages of the present invention will be better understood after reading the following detailed description of embodiments of the present disclosure in conjunction with the accompanying drawings. In the drawings, components are not necessarily drawn to scale, and components having similar related characteristics or features may have the same or similar reference numerals.

[0012] Figure 1AA schematic diagram of the external structure of a gas supply system provided according to some embodiments of the present invention is shown.

[0013] Figure 1B A schematic diagram of the internal structure of an oven according to some embodiments of the present invention is shown.

[0014] Figure 2 A cross-sectional structural schematic diagram of a gas supply system provided according to some embodiments of the present invention is shown.

[0015] Figure 3 A schematic diagram of the structure of a plurality of gas storage tanks provided according to some embodiments of the present invention is shown.

[0016] Figure 4A A schematic diagram of the structure of a plurality of gas storage tanks provided according to other embodiments of the present invention is shown.

[0017] Figure 4B A schematic diagram of the structure of a plurality of gas storage tanks provided according to other embodiments of the present invention is shown.

[0018] Figure 5 A top view of a gas supply system provided according to some embodiments of the present invention is shown.

[0019] Figure 6 A flowchart of a process method for a semiconductor device according to some embodiments of the present invention is shown.

[0020] Figure label:

[0021] 100 gas supply system;

[0022] 110 baking oven;

[0023] 112 Inner wall;

[0024] 113 casing;

[0025] 114 Vacuum gap layer;

[0026] 115 thermal insulation material;

[0027] 120 spray plate;

[0028] 130 mirror structure;

[0029] 140 gas storage tanks;

[0030] 141 Valve;

[0031] 210 manifold;

[0032] 211 heating rod;

[0033] 310 First intake pipe;

[0034] 320 second air intake pipe;

[0035] 510 First set of gas storage tanks;

[0036] 311, 411 First Gas Storage Tank;

[0037] 312, 412 Second Gas Storage Tanks;

[0038] 413 Gas storage tank with minimum feeding volume;

[0039] 414 sealing components;

[0040] 520 Second set of gas storage tanks;

[0041] 530 Third Group of Gas Storage Tanks;

[0042] 540 Fourth Group of Gas Storage Tanks;

[0043] Steps S610~S620 Detailed Implementation

[0044] The following specific embodiments illustrate the implementation of the present invention. Those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. Although the description of the present invention is presented in conjunction with preferred embodiments, this does not mean that the features of the invention are limited to these embodiments. On the contrary, the purpose of describing the invention in conjunction with embodiments is to cover other options or modifications that may be derived based on the claims of the present invention. To provide a thorough understanding of the invention, many specific details will be included in the following description. The invention may also be implemented without using these details. Furthermore, to avoid confusion or obscuring the focus of the invention, some specific details will be omitted in the description.

[0045] In the description of this invention, it should be noted that, unless otherwise explicitly specified and limited, the terms "installation," "connection," and "linking" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection of two components. Those skilled in the art can understand the specific meaning of the above terms in this invention based on the specific circumstances.

[0046] Furthermore, the terms "upper," "lower," "left," "right," "top," "bottom," "horizontal," and "vertical" used in the following description should be understood as the orientations shown in the relevant paragraphs and accompanying drawings. These relative terms are for illustrative purposes only and do not imply that the described apparatus must be manufactured or operated in a specific orientation, and therefore should not be construed as limiting the invention.

[0047] It is understood that although terms such as "first," "second," and "third" may be used herein to describe various components, regions, layers, and / or parts, these components, regions, layers, and / or parts should not be limited by these terms, and these terms are only used to distinguish different components, regions, layers, and / or parts. Therefore, the first components, regions, layers, and / or parts discussed below may be referred to as second components, regions, layers, and / or parts without departing from some embodiments of the present invention.

[0048] As mentioned above, during the long-distance transport of gas from the gas storage tank to the process chamber, the pressure decreases, ultimately resulting in a reduced jetting capability upon entering the process chamber. This reduced jetting capability of the reaction source during the process prevents it from reaching the bottom of the substrate trenches, leading to incomplete trench filling, reduced product yield, decreased reliability, and even device failure. Furthermore, in existing technologies, bends in the process piping and dead zones not covered by heating bands cause unstable ambient temperatures, easily leading to condensation of the reaction source, resulting in particulate contamination and affecting film formation consistency.

[0049] To address the aforementioned problems in the prior art, this invention provides a gas supply system, a semiconductor device manufacturing apparatus, a semiconductor device manufacturing method, and a computer-readable storage medium, which can minimize the reaction distance, reduce the pressure drop of the reaction source during transmission, thereby improving the jetting capability during the manufacturing process, enhancing the filling effect of deep trenches, and also avoiding condensation at transmission inflection points and heating dead zones, thus improving the thermal stability of the entire gas supply system.

[0050] In some non-limiting embodiments, the gas supply system provided in the first aspect of the present invention can be configured in the process equipment of the semiconductor device provided in the second aspect of the present invention, and used to implement the process method of the semiconductor device provided in the third aspect of the present invention.

[0051] Specifically, in some non-limiting embodiments, the computer-readable storage medium described above in the fourth aspect of the present invention stores a computer program product thereon. The computer program product includes computer instructions. A processor is connected to the memory and configured to execute the computer instructions included in the computer program product to implement a process method for a semiconductor device as provided in the third aspect of the present invention.

[0052] The working principle of the above-described gas supply system will be described below with reference to embodiments of semiconductor device process equipment and methods. Those skilled in the art will understand that these embodiments of semiconductor device process equipment and methods are merely non-limiting implementations provided by the present invention, intended to clearly demonstrate the main concepts of the invention and provide specific solutions convenient for public implementation, rather than limiting all operating modes or functions of the gas supply system. Similarly, this gas supply system is also only one non-limiting implementation provided by the present invention, and does not limit all operating modes or functions of these semiconductor device process equipment, or the implementing entities and execution order of each step in the semiconductor device process methods.

[0053] Please refer to the following first. Figure 1A , Figure 1A A schematic diagram of the external structure of a gas supply system provided according to some embodiments of the present invention is shown.

[0054] like Figure 1A As shown, in some embodiments of the present invention, the process equipment for semiconductor devices may mainly include a process chamber and a gas supply system 100.

[0055] Specifically, the process chamber can adapt to the timing requirements of various thin film fabrication processes such as plasma-enhanced chemical vapor deposition (PECVD), atomic layer deposition (ALD), and metal-organic chemical vapor deposition (MOCVD), and can be configured with corresponding structures and accessories, which are not limited here. A spray plate 120 is located above the interior of the process chamber (not shown in the attached diagram) to uniformly introduce gaseous reaction sources from above, facilitating uniform thin film growth on the upper surface of the reaction object. The substrate to be processed is placed below the spray plate 120 as the reaction object, and the surface of the substrate has trenches.

[0056] As shown in Figure 1, the gas supply system 100 is positioned above the spray plate 120 and is used to spray the gaseous reaction source onto the substrate surface so that it reaches the bottom of the trench and fills the trench. In this embodiment, by placing the gas supply system 100 directly above the spray plate 120, the transmission distance and reaction distance of the gaseous reaction source can be shortened to the extreme, thereby effectively reducing the impact of gas pressure drop caused by the long gas pipeline and improving the impact of transmission pressure drop on the process film thickness.

[0057] Furthermore, please refer to [the relevant documentation / reference]. Figure 1B and Figure 2 , Figure 1B A schematic diagram of the internal structure of an oven according to some embodiments of the present invention is shown. Figure 2 A cross-sectional structural schematic diagram of a gas supply system provided according to some embodiments of the present invention is shown.

[0058] like Figure 1B and Figure 2 As shown, in some embodiments, the gas supply system 100 may include a gas storage tank 140 and an oven 110. The oven 110 is located above the spray plate 120. The gas storage tank 140 is placed inside the oven 110 and is used to store the gaseous reaction source. The outlet end of the gas storage tank 140 is provided with a valve 141 to control the opening and closing of the gaseous reaction source supply.

[0059] Continue as Figure 1B As shown, the inner wall 112 of the baking oven 110 is equipped with a heating wire 111. When the heating wire 111 is energized, the thermal effect of the current raises its temperature. The high-temperature heating wire 111 continuously emits infrared thermal radiation (the main form of thermal radiation). The radiant energy acts directly on the surface of the gas storage tank 140, is absorbed by the reaction source inside, and is converted into internal energy, thus directly heating the reaction source. In addition, the air around the heating wire 111 is heated, its density decreases, and it flows upward. Cool air is replenished near the heating wire 111 and continuously heated, thus forming a circulating convection, which helps to drive the overall temperature inside the baking oven 110 to rise evenly.

[0060] In addition, combined Figure 1B and Figure 2 As shown, the inner wall 112 of the baking oven 110 can be equipped with a mirror structure 130 to reflect the heat radiated onto the inner wall 112 back onto the gas storage tank 140, thereby uniformly heating the gaseous reaction source inside the gas storage tank 140. Inside the baking oven 110, heat transfer is essentially the transfer of electromagnetic radiation waves. The mirror structure 130 prevents the absorption of electromagnetic waves and reflects them back in their original direction of propagation, thus reducing the outward transfer of heat.

[0061] Specifically, the mirror structure 130 has a highly conductive metal surface layer containing a large number of free electrons. When electromagnetic waves irradiate the highly conductive metal surface, these electrons vibrate rapidly under the electric field of the electromagnetic waves, generating reverse electromagnetic waves that cancel out the incident thermal radiation electromagnetic waves. This prevents the electromagnetic waves from penetrating the metal layer and being absorbed by the metal. At this point, these inaccessible and unabsorbable electromagnetic waves are simply reflected back, resulting in mirror reflection. Furthermore, the surface of the mirror structure 130 is smooth, with a roughness much smaller than the wavelength of the thermal radiation electromagnetic waves. Therefore, the electromagnetic waves are reflected along a fixed direction, maximizing the return of heat and improving reflection efficiency.

[0062] In some preferred embodiments, the upper surface, lower surface, and four sides of the inner wall 112 of the baking oven 110 can be provided with mirror structures 130 to reflect all the heat radiated to the sides of the inner wall 112 back to the gas storage tank 140. In this embodiment, the uniformity of heating of the gas storage tank 140 inside the baking oven 110 can be further improved, thereby increasing the overall heating efficiency.

[0063] Continue as Figure 2 As shown, in some embodiments, the baking oven 110 is provided with a manifold 210. The manifold 210 is located at the bottom of the baking oven 110 and is used to connect several gas storage tanks 140 in series to meet the gas consumption requirements of the target process.

[0064] Specifically, in Figure 2 In the illustrated embodiment, the gas storage tank 140 and the valve 141 located at its outlet end can be integrated and mounted on the manifold 210. The manifold 210 sits directly on the spray plate 120, thereby minimizing the reaction distance. Furthermore, the manifold 210 can be equipped with an independent heating rod 211 and a temperature-sensing thermocouple, allowing it to be heated individually, which helps to specifically ensure that the gaseous reaction source does not condense during the process of being transported from the oven 110 to the spray plate 120.

[0065] Next, we can combine Figure 3 Common understanding Figure 3 A schematic diagram of the structure of a plurality of gas storage tanks provided according to some embodiments of the present invention is shown.

[0066] like Figure 3 As shown, in some optional embodiments, the manifold 210 may be connected in series with a first gas storage tank 311 and a second gas storage tank 312. The first gas storage tank 311 and the second gas storage tank 312 may serve as a group of gas storage tanks. The combined supply volume of a group of gas storage tanks (i.e., the sum of the gaseous reaction sources) may be used as the gas supply for the target process to meet the different gas consumption requirements of multiple target processes.

[0067] Furthermore, in some optional embodiments, the feeding volumes of the multiple gas storage tanks 140 connected in series can be the same or different. For example... Figure 3 As shown, manifold 210 is connected in series with a first gas storage tank 311 and a second gas storage tank 312, both with the same feeding volume. Figure 4A As shown, manifold 210 connects a first gas storage tank 411 and a second gas storage tank 412 with different feed volumes. Through manifold 210, gas storage tanks with different feed volumes can be connected in series arbitrarily based on the gas consumption requirements of the target process. By changing the feed volume and / or number of the connected gas storage tanks, it is possible to adjust process parameters such as pressure and concentration without altering the heating mechanical structure and channels, making the adjustment of process pressure and flow window more convenient.

[0068] In addition, such as Figure 4BAs shown, in some alternative embodiments, when the gas demand is less than the minimum supply volume of the gas storage tank 413, the remaining series ports on the manifold 210, excluding the minimum supply volume gas storage tank 413, can be blind-blocked via the sealing member 414. The blind-blocking operation of the sealing member 414 on the series ports is equivalent to connecting a gas storage tank without a supply volume in series at the remaining series ports, thereby enabling the gas supply system 100 to meet the gas supply demand for small gas volumes.

[0069] via the above Figure 3 , Figure 4A and Figure 4B The illustrated embodiment allows for flexible expansion of the overall gas supply capacity of the gas supply system 100 by connecting multiple gas storage tanks of different supply volumes in series on the manifold 210, thereby meeting the process requirements for large gas consumption and demand. Furthermore, the process requirements for small gas consumption and demand can be met by blind-blocking the excess series ports in the manifold 210 via the sealing member 414. Therefore, the gas supply system 100 provided by the present invention facilitates convenient and rapid adjustment of the window for process gas usage.

[0070] Further, please see Figure 5 , Figure 5 A top view of a gas supply system provided according to some embodiments of the present invention is shown.

[0071] In some embodiments, the baking oven 110 includes multiple sets of gas storage tanks with the same or different feeding volumes. Figure 5 In the illustrated embodiment, the baking oven 110 may include four groups of gas storage tanks with different feeding volumes, namely, a first group of gas storage tanks 510, a second group of gas storage tanks 520, a third group of gas storage tanks 530, and a fourth group of gas storage tanks 540. Taking the first group of gas storage tanks 510 as an example, it may include several gas storage tanks with the same or different feeding volumes. Further details are omitted here. Furthermore, there are no limitations on the feeding volume or the number of gas storage tanks in each group.

[0072] Optionally, the baking oven 110 may include multiple sets of gas storage tanks with different feeding volumes, and the feeding volume of each set of gas storage tanks can correspond to the gas consumption requirements of different target processes. Therefore, when a specific target process is carried out in the process chamber, the corresponding set of gas storage tanks with different feeding volumes can be opened directly to achieve rapid supply of the target amount of gaseous reaction source.

[0073] In existing technologies, to meet the gas consumption requirements of different processes, it is necessary not only to add or reduce the number of gas storage tanks, but also to modify heating components such as heating belts when changing a single gas storage tank. This modification process is complex and requires changing a large number of parts. In the aforementioned... Figures 3-5The embodiments shown not only allow for rapid selection and timely supply of gaseous reaction source quantities according to different process requirements, resulting in a large process window, but also eliminate the need to modify the heating mechanical structure and channels through a baking-style overall heating method.

[0074] Continue back Figure 3 In some embodiments, the gas supply system 100 may include a first air inlet pipe 310. The first air inlet pipe 310 may be connected via a manifold 210 to gas storage tanks within each group to introduce carrier gas into the storage tanks and carry the gaseous reaction source towards the spray plate 120 at a first flow rate. Figure 3 As shown by the airflow arrow in the illustrated embodiment, the carrier gas can be transmitted through the first air inlet pipe 310 to the first gas storage tank 311 connected in series, and then flow through the second gas storage tank 312 connected in series with the first gas storage tank 311, and finally carry the gaseous reaction source to the spray plate 120 through the open valve 141.

[0075] Furthermore, during the high-speed injection of the gaseous reaction source into the cavity via the gas storage tank, backflow of the reaction source may occur, which could cause pipeline contamination. In response, Figure 3 In the illustrated embodiment, the air supply system 100 may include a second air intake pipe 320. (In conjunction with...) Figure 3 and Figure 5 It is understood that the second inlet pipe 320 can be connected to the manifold 210 to introduce a guide gas into the manifold 210, allowing the guide gas to flow unidirectionally towards the spray plate 120 within the manifold 210 at a second flow rate. Optionally, the guide gas can be an inert gas with stable chemical properties that will not interfere with the process reaction. For example, the guide gas can include, but is not limited to, argon. Throughout the entire trench filling process of the substrate, the guide gas can be continuously introduced into the second inlet pipe 320, so that there is a continuous trickle of gas flowing towards the spray plate 120 within the manifold 210, thereby avoiding backflow of the gaseous reaction source.

[0076] Optionally, such as Figure 3 As shown, the orifice diameter of the air outlet in valve 141 can be set to 0.25 mm, thereby enabling the guiding gas to flow in a trickle-like manner.

[0077] In some optional embodiments, during the trench filling process described above, the first flow velocity of the carrier gas can be greater than the second flow velocity of the guide gas. A higher carrier gas flow velocity allows the gaseous reaction source to be rapidly loaded into the process chamber, thereby increasing the injection capability of the gaseous reaction source into the chamber and helping it reach the bottom of the trench, achieving a better filling effect for deep trenches. Furthermore, after the gaseous reaction source has been introduced, the guide gas is continuously introduced into the manifold 210 at a lower flow rate. This not only avoids backflow of the gaseous reaction source but also prevents a large amount of guide gas from being introduced into the process chamber in a short time, thus avoiding pressure fluctuations within the chamber.

[0078] In the embodiments provided by this invention, the entire gas supply system 100 adopts an oven-style heating method, which can minimize the distance between various components. By integrating various air intake pipes, transmission pipes, and gas storage tanks onto the entire manifold, each independent unit does not need separate heating, resulting in a more compact overall structure. The oven-style heating method enables centralized heating of all pipes and gas supply components, thereby reducing heating channels and occupying less space.

[0079] Furthermore, we can return to Figure 1B As shown, in some preferred embodiments, a vacuum gap layer 114 may be provided between the inner wall 112 and the outer shell 113 of the oven 110. The vacuum gap layer 114 can block heat conduction from the inner wall 112 to the outer shell 113, thereby reducing heat loss and improving overall heating efficiency. Specifically, in oven-type heating methods, the main pathways of heat loss include heat conduction from the oven wall to the external environment and heat convection from the oven wall to the external air. Both of these heat dissipation methods require a medium (solid medium and gaseous medium), and the vacuum gap layer 114 can effectively cut off both of these media. Since there is no space layer of gas molecules and atoms in the vacuum gap layer 114, there is no continuous medium-transmitted heat vibration, thus cutting off the heat transfer channel of the solid medium. Furthermore, since there are no gas molecules in the vacuum gap layer 114, airflow cannot be formed, therefore the heat convection transfer path can also be completely blocked.

[0080] In addition, such as Figure 2 As shown, an insulating material 115, such as insulating cotton, can also be provided on the outside of the outer shell of the oven 110. By wrapping the outer shell 113 with the insulating material, heat conduction from inside the outer shell 113 to the outside can be blocked, thereby further reducing heat loss inside the oven 110. Through the aforementioned vacuum gap layer 114 and insulating material 115, heat loss inside the oven 110 is blocked by a double layer of heat insulation, thereby improving the heating efficiency of the entire gas supply system 100 and making the entire gas supply system 100 more evenly heated, thus helping to effectively avoid dead zones and cold spots.

[0081] This concludes the basic description of the process equipment for the semiconductor device provided in one aspect of the present invention, and the gas supply system 100 configured therein. The entire gas supply system 100 adopts a heating method of individual heating of manifold 210 and overall baking, which can effectively avoid condensation at pipe bends and heating dead zones, thus making the thermal stability of the entire gas supply system 100 better.

[0082] Next, the working principle of the above-mentioned gas supply system 100 will be further explained in conjunction with the semiconductor device process method provided by another aspect of the present invention. Figure 6 A flowchart of a process method for a semiconductor device according to some embodiments of the present invention is shown.

[0083] like Figure 6 As shown, in some embodiments of the present invention, the semiconductor device manufacturing process can be implemented via the aforementioned semiconductor device manufacturing equipment. The semiconductor device manufacturing process mainly includes steps S610 and S620.

[0084] First, step S610 can be executed to introduce carrier gas into the gas supply system in the semiconductor device process equipment, so that it carries the gaseous reaction source in the target gas storage tank into the process chamber at a first flow rate to perform the trench filling process for the substrate.

[0085] Specifically, combined Figure 3 It is understood that in some embodiments, carrier gas can be introduced into the gas storage tank via the first air inlet pipe 310, and the gaseous reaction source can be carried towards the spray plate 120 at a first flow rate. Furthermore, the first flow rate corresponding to the carrier gas flow rate can be set to a large value to quickly load the gaseous reaction source into the process chamber, thereby increasing the spraying capability of the gaseous reaction source into the chamber, which helps the gaseous reaction source reach the bottom of the trench and achieve a better filling effect for the deep trench.

[0086] Then, step S620 can be executed, in response to the completion of the gaseous reaction source introduction action, a guide gas is introduced into the gas supply system, so that it flows unidirectionally in the manifold at a second flow rate until the trench filling process is completed.

[0087] Specifically, in some embodiments, the trench filling process can be an atomic layer deposition process, which includes four steps: introducing a first reaction source, purging a first reaction source, introducing a second reaction source, and purging a second reaction source. Therefore, after completing the first or second reaction source introduction step corresponding to step S610, a guide gas can be introduced into the manifold 210 through the second inlet pipe 320, allowing the guide gas to flow unidirectionally towards the spray plate 120 within the manifold 210 at a second flow rate. Throughout the entire trench filling process of the substrate, the guide gas can be continuously introduced into the second inlet pipe 320, ensuring a continuous trickle of gas flowing towards the spray plate 120 within the manifold 210, thereby preventing backflow of the gaseous reaction source.

[0088] Optionally, the second flow rate corresponding to the guide gas flow rate can be set to a relatively small value, which can not only avoid the backflow of the gaseous reaction source, but also prevent the guide gas from being introduced into the process chamber in a short time in large quantities, thus causing pressure fluctuations in the chamber.

[0089] In some other embodiments, the first flow rate and the second flow rate described above may also be set to be the same, or other different magnitudes.

[0090] In summary, the present invention provides a gas supply system, a semiconductor device process equipment, a semiconductor device process method, and a computer-readable storage medium, which can minimize the reaction distance, reduce the pressure drop of the reaction source during the transmission process, thereby improving the jetting capability in the process, enhancing the filling effect of deep trenches, and avoiding condensation at transmission inflection points and heating dead zones, thus improving the thermal stability of the entire gas supply system.

[0091] Although the methods described above are illustrated and depicted as a series of actions for the sake of simplicity, it should be understood and appreciated that these methods are not limited by the order of the actions, as some actions may occur in a different order and / or concurrently with other actions from the illustrations and descriptions herein or not illustrated and described herein but which may be understood by those skilled in the art, according to one or more embodiments.

[0092] Those skilled in the art will further appreciate that the various illustrative logic blocks, modules, circuits, and algorithm steps described in conjunction with the embodiments disclosed herein can be implemented as electronic hardware, computer software, or a combination of both. To clearly illustrate this interchangeability between hardware and software, the various illustrative components, blocks, modules, circuits, and steps are described above in a generalized manner in terms of their functionality. Whether such functionality is implemented as hardware or software depends on the specific application and the design constraints imposed on the overall system. Those skilled in the art may implement the described functionality in different ways for each specific application, but such implementation decisions should not be construed as departing from the scope of the invention.

[0093] The various illustrative logic modules and circuits described in conjunction with the embodiments disclosed herein may be implemented or performed using a general-purpose processor, a digital signal processor (DSP), an application-specific integrated circuit (ASIC), a field-programmable gate array (FPGA) or other programmable logic device, discrete gate or transistor logic, discrete hardware components, or any combination thereof designed to perform the functions described herein. The general-purpose processor may be a microprocessor, but in alternatives, it may be any conventional processor, controller, microcontroller, or state machine. The processor may also be implemented as a combination of computing devices, such as a combination of a DSP and a microprocessor, multiple microprocessors, one or more microprocessors cooperating with a DSP core, or any other such configuration.

[0094] The steps of the methods or algorithms described in conjunction with the embodiments disclosed herein may be embodied directly in hardware, in a software module executed by a processor, or in a combination of both. The software module may reside in RAM memory, flash memory, ROM memory, EPROM memory, EEPROM memory, registers, hard disk, removable disk, CD-ROM, or any other form of storage medium known in the art. An exemplary storage medium is coupled to a processor such that the processor can read and write information to / from the storage medium. In an alternative, the storage medium may be integrated into the processor. The processor and storage medium may reside in an ASIC. The ASIC may reside in a user terminal. In an alternative, the processor and storage medium may reside as discrete components in the user terminal.

[0095] In one or more exemplary embodiments, the described functionality may be implemented in hardware, software, firmware, or any combination thereof. If implemented in software as a computer program product, the functionality may be stored or transmitted as one or more instructions or code on or through a computer-readable medium. A computer-readable medium includes both computer storage media and communication media, encompassing any medium that facilitates the transfer of a computer program from one location to another. A storage medium may be any available medium accessible to a computer. By way of example and not limitation, such a computer-readable medium may include RAM, ROM, EEPROM, CD-ROM or other optical disc storage, disk storage or other magnetic storage devices, or any other medium that can be used to carry or store desired program code in the form of instructions or data structures and is accessible to a computer. Any connection is also legitimately referred to as a computer-readable medium. For example, if the software is transmitted from a website, server, or other remote source using coaxial cable, fiber optic cable, twisted pair, digital subscriber line (DSL), or wireless technologies such as infrared, radio, and microwave, then the coaxial cable, fiber optic cable, twisted pair, DSL, or wireless technologies such as infrared, radio, and microwave are included in the definition of a medium. As used in this article, disk and disc include compact discs (CDs), laser discs, optical discs, digital multi-purpose discs (DVDs), floppy disks, and Blu-ray discs. Disks typically reproduce data magnetically, while discs reproduce data optically using lasers. Combinations of these should also be included within the scope of computer-readable media.

[0096] The prior description of this disclosure is provided to enable any person skilled in the art to make or use this disclosure. Various modifications to this disclosure will be apparent to those skilled in the art, and the general principles defined herein may be applied to other variations without departing from the spirit or scope of this disclosure. Therefore, this disclosure is not intended to be limited to the examples and designs described herein, but should be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A gas supply system, characterized in that, include: A gas storage tank, used to store a gaseous reaction source, has a valve at its outlet; and A baking oven is located above a spray plate, and the gas storage tank is stored inside it. The inner wall of the baking oven is equipped with a mirror structure to reflect the heat radiated to the inner wall back to the gas storage tank to heat the gaseous reaction source.

2. The gas supply system as described in claim 1, characterized in that, The baking oven is equipped with a manifold located at the bottom of the oven, which is used to connect several gas storage tanks in series to meet the gas consumption requirements of the target process.

3. The gas supply system as described in claim 2, characterized in that, The baking oven includes several groups of gas storage tanks with different supply volumes. The supply volumes of the gas storage tanks in each group may be the same or different. When the gas demand is less than that of the gas storage tank with the minimum supply volume, the excess serial ports on the manifold are blindly blocked.

4. The gas supply system as described in claim 3, characterized in that, It includes a first air inlet pipe, which is connected to the gas storage tanks in each group via the manifold to introduce carrier gas into the gas storage tanks and carry the gaseous reaction source to the spray plate at a first flow rate.

5. The gas supply system as described in claim 4, characterized in that, It also includes a second air inlet pipe, which is connected to the manifold to introduce guide gas into the manifold, so that the guide gas flows unidirectionally toward the spray plate in the manifold at a second flow rate.

6. The gas supply system as described in claim 1, characterized in that, A vacuum gap layer is provided between the inner wall of the oven and its outer shell to prevent heat from the inner wall from being conducted to the outer shell.

7. The gas supply system as described in claim 6, characterized in that, The outer shell is provided with thermal insulation material to prevent heat from being conducted from inside the shell to the outside.

8. A semiconductor device manufacturing apparatus, characterized in that, include: The process chamber has a spray plate at the top inside, and a substrate to be processed is placed below the spray plate. The substrate has grooves on its surface. as well as The gas supply system as described in any one of claims 1 to 7 is located above the spray plate and is used to spray a gaseous reaction source onto the substrate so that it reaches the bottom of the trench and fills the trench.

9. A process method for a semiconductor device, characterized in that, Implemented via the process equipment for the semiconductor device as described in claim 8, the process method includes the following steps: A carrier gas is introduced into the gas supply system of the semiconductor device's process equipment, carrying the gaseous reaction source from the target gas storage tank into the process chamber at a first flow rate; and In response to the completion of the gaseous reaction source introduction action, a guide gas is introduced into the gas supply system, causing it to flow unidirectionally in the manifold at a second flow rate until the trench filling process is completed.

10. A computer-readable storage medium storing computer instructions thereon, characterized in that, When the computer instructions are executed by the processor, the process method of the semiconductor device as described in claim 9 is implemented.

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