Heating control method and device of high-temperature reaction kettle, electronic equipment and storage medium

Abstract

The embodiment of the invention discloses a heating control method and device for a high-temperature reaction kettle, electronic equipment and a storage medium, and the method comprises the steps: obtaining a first type target parameter corresponding to a to-be-heated material in a target heating section, and carrying out the PID control of the high-temperature reaction kettle according to the first type target parameter, when it is detected that the current temperature of the high-temperature reaction kettle reaches a control switching threshold value corresponding to the target heating section, the first type of target parameters are switched into second type of target parameters, and PID control is conducted on the high-temperature reaction kettle according to the second type of target parameters. Therefore, according to the scheme, the heating process of the high-temperature reaction kettle is decomposed into two different stages on the basis of performing segmented control according to the heating process of the to-be-heated material, and different types of target parameters are set for each stage to perform PID control on the high-temperature reaction kettle, so that the problems of too fast short-term temperature rise and temperature overshoot can be effectively solved; therefore, the high-temperature reaction kettle can be more accurately heated and controlled.

Description

Technical Field

[0001] This application relates to the field of automated heating control technology, and more specifically, to a heating control method and related apparatus for a high-temperature reactor. Background Technology

[0002] High-temperature reactors are widely used in material sintering, chemical synthesis and other applications, and the stability of their heating process directly affects product quality.

[0003] Currently, the traditional method for heating high-temperature reactors involves setting a target temperature and time, and then applying PID (Proportional-Integral-Derivative) control based on these parameters. However, the sole objective of traditional PID control is to bring the current temperature as close to a fixed target temperature as quickly as possible. The feedback variable in PID control is only a single type of control parameter, which can easily lead to excessively rapid temperature rise or temperature overshoot in the high-temperature reactor within a short period, resulting in poor accuracy in heating control. Summary of the Invention

[0004] The embodiments of this application provide a heating control method and apparatus, electronic equipment, and storage medium for a high-temperature reactor, in order to solve the problem of poor heating control accuracy in high-temperature reactors.

[0005] According to one aspect of the embodiments of this application, a heating control method for a high-temperature reactor is provided, comprising: acquiring a first type of target parameter corresponding to a target heating segment of a material to be heated; wherein the target heating segment is used to represent a process stage divided according to a preset heating process during the heating of the material to be heated, and different target heating segments correspond to different target heating temperatures and target heating durations; performing PID control on the high-temperature reactor according to the first type of target parameter, and detecting the current temperature of the high-temperature reactor in real time; when it is detected that the current temperature of the high-temperature reactor reaches the control switching threshold corresponding to the target heating segment, switching the first type of target parameter to a second type of target parameter; and performing PID control on the high-temperature reactor according to the second type of target parameter.

[0006] In another exemplary embodiment, the first type of target parameter includes a target heating rate. The step of performing PID control on the high-temperature reactor based on the first type of target parameter includes: obtaining the target heating temperature and target heating duration corresponding to the material to be heated in the target heating section; determining an initial heating rate based on the target heating temperature and the target heating duration, and performing PID control on the high-temperature reactor based on the initial heating rate; correcting the current heating rate of the high-temperature reactor every preset time period to obtain a target heating rate; and performing PID control on the high-temperature reactor based on the target heating rate.

[0007] In another exemplary embodiment, the step of correcting the current heating rate of the high-temperature reactor at preset time intervals to obtain a target heating rate includes: obtaining the current temperature difference between the target heating temperature and the current temperature; obtaining the remaining heating time of the material to be heated in the target heating section; and calculating the target heating rate based on the current temperature difference and the remaining heating time.

[0008] In another exemplary embodiment, the step of performing PID control on the high-temperature reactor based on the initial heating rate includes: acquiring a first temperature detection value at a first moment and a second temperature detection value at a second moment; wherein the second moment is the moment preceding the first moment; calculating the current heating rate based on the first temperature detection value, the second temperature detection value, and the sampling time interval; if the current heating rate is less than the initial heating rate, controlling the heating power of the high-temperature reactor to increase, thereby increasing the heating rate of the high-temperature reactor; if the current heating rate is greater than the initial heating rate, controlling the heating power of the high-temperature reactor to decrease, thereby decreasing the heating rate of the high-temperature reactor.

[0009] In another exemplary embodiment, the first type of target parameter includes a target heating rate, and the second type of target parameter includes a target heating temperature. The step of switching the first type of target parameter to the second type of target parameter when the current temperature of the high-temperature reactor reaches the control switching threshold corresponding to the target heating section includes: obtaining the control parameter switching weight corresponding to the material to be heated; performing a weighted calculation on the target heating temperature according to the control parameter switching weight to obtain the control switching threshold; and switching the target heating rate to the target heating temperature when the current temperature of the high-temperature reactor reaches the control switching threshold.

[0010] In another exemplary embodiment, obtaining the control parameter switching weight corresponding to the material to be heated includes: obtaining material property parameters of the material to be heated, wherein the material property parameters include one or more of specific heat capacity, thermal conductivity, and thermal stability threshold; querying a preset weight mapping table according to the material property parameters to obtain the control parameter switching weight corresponding to the material to be heated; wherein the preset weight mapping table stores the correspondence between the material property parameters and the preset weight mapping table.

[0011] In another exemplary embodiment, after performing PID control on the high-temperature reactor according to the second type of target parameters, the method further includes: if the heating time of the high-temperature reactor reaches the target heating time corresponding to the target heating segment, and the target heating segment is not the final heating segment of the material to be heated in the heating process, then obtaining the first type of target parameters and the second type of target parameters of the next heating segment adjacent to the target heating segment; and performing PID control on the high-temperature reactor according to the first type of target parameters and the second type of target parameters of the next heating segment.

[0012] According to one aspect of the embodiments of this application, a heating control device for a high-temperature reactor is provided, comprising: an acquisition module configured to acquire a first type of target parameter corresponding to a target heating section of a material to be heated; wherein the target heating section is used to represent a temperature range segment divided according to a preset heating process during the heating of the material to be heated, and different target heating sections correspond to different temperature range segments; a first control module configured to perform PID control on the high-temperature reactor according to the first type of target parameter and to detect the current temperature of the high-temperature reactor in real time; a switching module configured to switch the first type of target parameter to a second type of target parameter when the current temperature of the high-temperature reactor is detected to reach the control switching threshold corresponding to the target heating section; and a second control module configured to perform PID control on the high-temperature reactor according to the second type of target parameter.

[0013] According to one aspect of the present application, an electronic device is provided, comprising: one or more processors; and a storage device for storing one or more programs, which, when executed by the one or more processors, cause the electronic device to implement the heating control method for a high-temperature reactor as described above.

[0014] According to one aspect of the embodiments of this application, a computer-readable storage medium is provided, on which computer-readable instructions are stored, which, when executed by a computer processor, cause the computer to perform the heating control method for a high-temperature reactor as described above.

[0015] In the technical solution provided by the embodiments of this application, by obtaining the first type of target parameters corresponding to the target heating section of the material to be heated, PID control is performed on the high-temperature reactor based on the first type of target parameters. When it is detected that the current temperature of the high-temperature reactor reaches the control switching threshold corresponding to the target heating section, the first type of target parameters are switched to the second type of target parameters, and PID control is performed on the high-temperature reactor based on the second type of target parameters. In this way, based on the segmented control according to the heating process of the material to be heated, this solution further decomposes the heating process of the high-temperature reactor into two different stages, and sets different types of target parameters for each stage to perform PID control on the high-temperature reactor. This can effectively solve the problems of rapid short-term heating and temperature overshoot, thereby enabling more accurate heating control of the high-temperature reactor.

[0016] It should be understood that the above general description and the following detailed description are exemplary and explanatory only, and do not limit this application. Attached Figure Description

[0017] The accompanying drawings, which are incorporated in and form part of this specification, illustrate embodiments consistent with this application and, together with the description, serve to explain the principles of this application. It is obvious that the drawings described below are merely some embodiments of this application, and those skilled in the art can obtain other drawings based on these drawings without any inventive effort. In the drawings: Figure 1 This is a schematic diagram of an implementation environment related to the heating control method of a high-temperature reactor shown in an exemplary embodiment of this application; Figure 2 This is a flowchart illustrating a heating control method for a high-temperature reactor, as shown in an exemplary embodiment of this application; Figure 3 This is a schematic diagram illustrating the application of PID control in an exemplary embodiment of this application; Figure 4 This is a flowchart illustrating a method for PID control of a high-temperature reactor based on a first type of target parameter, as shown in an exemplary embodiment of this application. Figure 5 This is a flowchart illustrating a heating control method for a high-temperature reactor, as shown in another exemplary embodiment of this application; Figure 6 This is a flowchart illustrating a method for correcting the current heating rate, as shown in an exemplary embodiment of this application. Figure 7 This is a flowchart illustrating a method for switching target parameters of PID control, as shown in an exemplary embodiment of this application; Figure 8This is a schematic diagram illustrating a PID control temperature-time curve in an exemplary embodiment of this application; Figure 9 This is a flowchart illustrating a heating control method for a high-temperature reactor, as shown in another exemplary embodiment of this application. Figure 10 This is a schematic diagram of the structure of a heating control device for a high-temperature reactor, as shown in an exemplary embodiment of this application. Figure 11 A schematic diagram of the structure of a computer system suitable for implementing the electronic device of the present application is shown. Detailed Implementation

[0018] Exemplary embodiments will now be described in detail, examples of which are illustrated in the accompanying drawings. When the following description relates to the drawings, unless otherwise indicated, the same numbers in different drawings denote the same or similar elements. The embodiments described in the following exemplary embodiments do not represent all embodiments identical to those described in this application. Rather, they are merely examples of apparatuses and methods identical to some aspects of this application as detailed in the appended claims.

[0019] The block diagrams shown in the accompanying drawings are merely functional entities and do not necessarily correspond to physically independent entities. That is, these functional entities can be implemented as application programs, in one or more hardware modules or integrated circuits, or in different models and / or processor devices and / or microcontroller devices.

[0020] The flowcharts shown in the accompanying drawings are merely illustrative and do not necessarily include all content and operations / steps, nor do they necessarily have to be performed in the described order. For example, some operations / steps can be broken down, while others can be combined or partially combined; therefore, the actual execution order may change depending on the specific circumstances.

[0021] It should be noted that "multiple" as mentioned in this application refers to two or more. "And / or" describes the relationship between related objects, indicating that three relationships can exist. For example, A and / or B can represent: A alone, A and B simultaneously, or B alone. The character " / " generally indicates that the preceding and following related objects have an "or" relationship.

[0022] The following is a description and explanation of the technical terms and background technology involved in this application: High-temperature reactors are closed chemical reaction devices specifically designed for high-temperature environments, widely used in materials sintering, chemical synthesis, and other applications. For example, materials sintering involves holding the material to be heated at a high temperature (but below its melting point) for a period of time, allowing atomic migration to bond the powder particles and obtain a dense, high-strength solid material. High-temperature reactors are primarily used in sintering processes requiring special atmosphere protection or pressure. Chemical synthesis uses water or other organic solvents as the reaction medium, creating a high-temperature, high-pressure environment (above the solvent's normal boiling point) within the reactor. Under these conditions, the physicochemical properties of the solvent (such as viscosity, diffusion coefficient, and dielectric constant) change significantly, making it a highly effective reaction medium.

[0023] In traditional technologies, the heating control of high-temperature reactors involves setting a target temperature and a target time, and then using PID control based on these parameters. However, the sole objective of PID control in traditional methods is to bring the current temperature as close to a fixed target temperature as quickly as possible. The feedback variable in PID control is only a single type of control parameter, which can easily lead to the high-temperature reactor heating up too quickly or overshooting in a short period, resulting in poor heating control accuracy.

[0024] Based on this, this application proposes a heating control method and device, electronic equipment, and storage medium for a high-temperature reactor to solve the problem of poor heating control accuracy in high-temperature reactors.

[0025] To facilitate understanding of the heating control method for the high-temperature reactor provided in the embodiments of this application, the following is combined with... Figure 1 The illustrated implementation environment describes a heating control scenario for a high-temperature reactor. The heating control method for a high-temperature reactor provided in this application embodiment can be applied to scenarios such as... Figure 1 In the illustrated implementation environment, the environment includes a terminal 110 and a high-temperature reactor 120. The terminal 110 and the high-temperature reactor 120 can communicate via a network, which can be a wired or wireless network. Therefore, the terminal 110 and the high-temperature reactor 120 can be directly or indirectly connected via wired or wireless communication. For example, the terminal 110 can be indirectly connected to the high-temperature reactor 120 via a wireless access point, or the terminal 110 can be directly connected to the high-temperature reactor 120 via the Internet; this application does not impose any limitations on this.

[0026] Among them, terminal 110 may be, but is not limited to, mobile phones, tablets, wearable devices (such as watches, bracelets, smart helmets, etc.), in-vehicle devices, smart home devices, augmented reality (AR) / virtual reality (VR) devices, laptops, ultra-mobile personal computers (UMPCs), netbooks, personal digital assistants (PDAs), etc.

[0027] A temperature sensor can be installed in the high-temperature reactor 120. The high-temperature reactor 120 uses a temperature sensor, such as a thermocouple or platinum resistance thermometer, to detect the current temperature of the material to be heated in real time.

[0028] The heating control method for the high-temperature reactor provided in the embodiments of this application will be described in detail below.

[0029] Please continue reading. Figure 2 , Figure 2 This is a flowchart illustrating a heating control method for a high-temperature reactor, as shown in an exemplary embodiment of this application. This method can be applied to... Figure 1 The implementation environment shown can be, for example, by Figure 1 The method can be executed by terminal 110 or high-temperature reactor 120 in the illustrated implementation environment, or by both terminal 110 and high-temperature reactor 120; this is not a limitation. Of course, this method can also be applied to other implementation environments and executed by terminals or high-temperature reactors in other implementation environments, or by both terminals or high-temperature reactors in other implementation environments; this embodiment does not limit this as well.

[0030] like Figure 2 As shown, in an exemplary embodiment, the heating control method for a high-temperature reactor includes at least steps S210 to S240, which are described in detail below: Step S210: Obtain the first type of target parameters corresponding to the material to be heated in the target heating section.

[0031] In this embodiment, the target heating segment represents the process stage divided according to a preset heating process for the material to be heated. Different target heating segments correspond to different target heating temperatures and target heating durations. The first type of target parameter can be used to represent the heating rate of the high-temperature reactor.

[0032] In some embodiments, the heating process of the material to be heated can be divided into different heating zones according to the heating process of the material to be heated, with each heating zone corresponding to multiple different heating segments. For example, each heating zone corresponds to 9 heating segments, for a total of 27 heating segments. In this way, by controlling the heating process of the high-temperature reactor in segments, the problem of excessively rapid temperature rise in a short period of time can be avoided, thereby improving the accuracy of heating control of the high-temperature reactor.

[0033] For example, as shown in Table 1 below, Table 1 is an example table of heating sections of a heating zone illustrated in an exemplary embodiment of this application.

[0034]

[0035] Table 1

[0036] As shown in Table 1, the target heating temperature for target heating section 1 is 100℃, and the target heating time is 80 min. Heating control of the high-temperature reactor is based on the target heating temperature and target heating time for target heating section 1, ensuring that the high-temperature reactor reaches the target heating temperature of 100℃ at a uniform rate within the target heating time of 80 min. The target heating temperature for target heating section 2 is 250℃, and the target heating time is 120 min. After target heating section 1 ends, heating control of the high-temperature reactor continues based on the corresponding parameters of target heating section 2, ensuring that the high-temperature reactor reaches the target heating temperature of 100℃ at a uniform rate within the target heating time of 80 min. The target heating temperature is uniformly increased to 250℃ within a 120-minute heating period. The target heating temperature for target heating section 3 is 400℃, and the target heating time is 120 minutes. After target heating section 2 ends, the high-temperature reactor is heated and controlled according to the corresponding parameters of target heating section 3, so that the high-temperature reactor is uniformly heated to 400℃ within a 120-minute heating period. And so on. According to the parameters corresponding to each target heating section, the high-temperature reactor is heated and controlled in sequence, so that the high-temperature reactor is heated uniformly during the heating process.

[0037] Step S220: Perform PID control on the high-temperature reactor according to the first type of target parameters, and monitor the current temperature of the high-temperature reactor in real time.

[0038] In this embodiment, by using the first type of target parameter as the target value for PID control, the heating power of the high-temperature reactor is dynamically adjusted during the heating process in the target heating section. This ensures that the heating process closely matches the first type of target parameter, resulting in uniform heating and avoiding overshoot or lag. Simultaneously, by real-time monitoring of the current temperature of the high-temperature reactor, the current temperature can be collected in real time, forming a closed-loop control system to promptly correct temperature deviations caused by environmental interference, thus ensuring heating stability.

[0039] In some embodiments, combined with Figure 3 As shown, Figure 3 This is a schematic diagram illustrating the application of PID control in an exemplary embodiment of this application. Figure 3 In PID control, proportional (P) control, integral (I) control, and derivative (D) control are used. Proportional (P) control increases the PID controller's output when the actual output power is lower than the desired value, thus increasing the system's output power; conversely, it decreases the output when the actual output power is higher than the desired value, thus reducing the system's output power. Integral (I) control records past deviations through the integral term and fine-tunes the PID controller's output over time to eliminate steady-state errors. Derivative (D) control adjusts the PID controller's output through the derivative term to predict and reduce future deviations. A signal is output to the actuator through this combination of three parts. The actuator controls the heating of the high-temperature reactor, and a detection module monitors the reactor's current temperature in real time to achieve closed-loop feedback. This allows for smoother and more precise adjustment of the output power to adapt to different load changes and system disturbances.

[0040] For example, the system output function of PID control can be expressed as:

[0041] in, Used to represent the output power of the PID controller at time t. Used to represent error, that is, the difference between the expected value and the actual value at time t. Used to represent proportional gain Used to represent integral gain. Used to represent differential gain Used to represent the integral of the error, that is, the accumulation of past errors. It is used to represent the reciprocal of the error, that is, the rate of change of the error.

[0042] For example, the proportional term The output is adjusted directly based on the current error; a large error results in a large output, and a small error results in a small output. The proportional term helps in quickly responding to errors. The integral term... Considering all past errors, if the error persists, the integral term will gradually increase the output to eliminate this persistent error. The integral term helps eliminate steady-state error. Differential term. The output is adjusted based on the rate of change of the error. If the rate of change is large, the derivative term will reduce the output to slow down the rate of change. The derivative term helps predict future errors and make adjustments in advance, thereby improving stability and response speed. As shown above, the output of the PID controller is the sum of these three parts. By adjusting the proportional gain, integral gain, and derivative gain, system performance can be optimized, and stability and response speed can be improved.

[0043] Step S230: When the current temperature of the high-temperature reactor is detected to have reached the control switching threshold corresponding to the target heating section, the first type of target parameter is switched to the second type of target parameter.

[0044] It is understandable that by switching the first type of target parameter to the second type of target parameter when the current temperature of the high-temperature reactor reaches the control switching threshold, the parameter switching can avoid temperature overshoot caused by inertia in the later stage of heating, and at the same time provide a buffer for subsequent stabilization of temperature or adjustment rate.

[0045] In some embodiments, the control switching threshold can be set to a critical value close to the target heating temperature, such as 90% of the target heating temperature.

[0046] Step S240: Perform PID control on the high-temperature reactor according to the second type of target parameters.

[0047] In this embodiment, the high-temperature reactor is first controlled by PID using a first type of target parameter. When the current temperature of the high-temperature reactor reaches the control switching threshold, the first type of target parameter is switched to a second type of target parameter for PID control. This can adapt to the control requirements of different stages. In some embodiments, the first type of target parameter can be the heating rate (i.e., the temperature change rate), and the second type of target parameter can be the temperature. In this way, by using the temperature change rate as a feedback quantity, the heating rate is controlled in real time, avoiding the rate fluctuations caused by traditional heating control that only focuses on temperature deviation. This ensures that the temperature rises at a uniform rate throughout the heating section and improves the accuracy of heating control.

[0048] In some embodiments, combined with Figure 4 As shown, Figure 4 This is a flowchart illustrating an exemplary embodiment of the present application of a method for PID control of a high-temperature reactor based on a first type of target parameter, which includes at least steps S410 to S440, detailed below: Step S410: Obtain the target heating temperature and target heating time of the material to be heated in the target heating section.

[0049] Step S420: Determine the initial heating rate based on the target heating temperature and target heating time, and perform PID control on the high-temperature reactor based on the initial heating rate.

[0050] In some embodiments, the initial heating rate can be determined based on the target heating temperature and the target heating duration in the following ways: Through calculation To obtain the initial heating rate; where, Used to indicate the initial heating rate Used to indicate the target heating temperature of the target heating section. Used to indicate the initial temperature of the target heating section. Used to indicate the target heating time.

[0051] For example, if the target heating temperature of the material to be heated in target heating section 4 is 600℃, the target heating time is 120 minutes, the unit sampling time is 10 seconds, and the initial temperature of each target heating section is the target heating temperature of the previous heating section, then the initial temperature could be 400℃. This can be calculated... We can obtain:

[0052] The initial heating rate is 0.028℃ / s.

[0053] In other embodiments, combined with Figure 5 As shown, Figure 5 This is a flowchart illustrating a heating control method for a high-temperature reactor, as shown in another exemplary embodiment of this application. After step S420, the method further includes steps S510 to S540, which are described in detail below: Step S510: Obtain the first temperature detection value at the first moment and the second temperature detection value at the second moment; wherein, the second moment is the moment preceding the first moment.

[0054] Step S520: Calculate the current heating rate based on the first temperature detection value, the second temperature detection value, and the sampling time interval.

[0055] In some embodiments, after obtaining the initial heating rate, the high-temperature reactor is subjected to PID control according to the initial heating rate. When the PID is first invoked, for example, if the current temperature is 405°C, the PID is calculated... We can obtain:

[0056] in, Used to represent the heating rate at time x, i.e., the current heating rate. This is used to represent the temperature reading at time x, i.e., the first temperature reading. This is used to represent the temperature detection value at time x-1, i.e., the second temperature detection value. The sampling time interval used to represent a unit of time, in some embodiments, .

[0057] In step S530, if the current heating rate is less than the initial heating rate, the heating power of the high-temperature reactor is increased to improve the heating rate of the high-temperature reactor.

[0058] In step S540, if the current heating rate is greater than the initial heating rate, the heating power of the high-temperature reactor is reduced to decrease the heating rate of the high-temperature reactor.

[0059] In this embodiment, during the heating process of the high-temperature reactor, heat loss may increase and the heating rate may be low due to factors such as decreased ambient temperature, aging of the reactor's insulation layer, and increased heat absorption by the materials. This embodiment addresses these dynamic changes quickly through power compensation, maintaining heating stability and enhancing the system's anti-interference capability. Simultaneously, if the current heating rate exceeds the initial standard, the heating power is reduced to decrease heat input, preventing premature reaching of the target temperature or overheating in the later stages of heating. This ensures both uniform heating and precise temperature control.

[0060] Step S430: The current heating rate of the high-temperature reactor is corrected every preset time interval to obtain the target heating rate.

[0061] In this embodiment, due to the influence of the working environment of the high-temperature reactor and other interference factors in the system, various interference factors exist during the heating process, such as changes in reactor heat dissipation, fluctuations in power supply voltage, and differences in the heat absorption characteristics of materials. Relying solely on the initial heating rate is prone to cumulative deviations. The dynamic correction in this embodiment can offset these interferences, ensuring that the heating rate always matches the process requirements and achieving uniform heating. Simultaneously, this periodic dynamic correction mechanism enables the control system to have automatic calibration capabilities, handling different operating conditions (such as different batches of materials and different ambient temperatures) without manual intervention, reducing reliance on operational experience and improving the versatility and stability of the solution.

[0062] In some embodiments, combined with Figure 6 As shown, Figure 6 This is a flowchart illustrating a method for correcting the current heating rate, as shown in an exemplary embodiment of this application, which includes at least steps S610 to S630, detailed below: Step S610: Obtain the current temperature difference between the target heating temperature and the current temperature.

[0063] Step S620: Obtain the remaining heating time of the material to be heated in the target heating section.

[0064] Step S630: Calculate the target heating rate based on the current temperature difference and the remaining heating time.

[0065] In this embodiment, the target heating rate is calculated by using the current temperature difference and the remaining heating time. This ensures that the corrected heating rate can just make up for the temperature difference within the remaining time, thus avoiding overheating due to excessively high rates and solving the problem of insufficient rates to meet the target, achieving precise completion of the heating phase.

[0066] For example, the formula for correcting the current heating rate can be expressed as follows:

[0067] in, Used to represent the corrected target heating rate. Used to indicate the target heating temperature of the target heating section. Used to indicate the target heating time of the target heating section. Used to represent the temperature reading at time x, i.e., the current temperature. Used to indicate the number of times PID control is invoked. The sampling time interval used to represent a unit of time, in some embodiments, . This can be expressed as the total duration from the start of heating of the target heating segment to time x. Used to indicate the remaining heating time.

[0068] For example, under the dynamic correction mechanism in the embodiments of this application, whenever Record once. The current heating rate is then corrected to obtain the target heating rate. Used to represent a preset time period. Used to indicate the number of times the PID control was called in the previous record.

[0069] Step S440: Perform PID control on the high-temperature reactor according to the target heating rate.

[0070] It is understandable that if PID control is based solely on the deviation between the current temperature and the target temperature, it may result in uneven heating rates during the heating process, affecting the consistency of the heating effect and ultimately causing the temperature change curve to appear stepped. However, in this embodiment, by using the target heating rate as the feedback quantity for PID control and dynamically adjusting the control target in conjunction with the remaining time in the heating section, the heating rate is controlled in real time. This avoids rate fluctuations caused by focusing only on temperature deviations, ensuring a uniform temperature rise throughout the heating section and improving the consistency of processes such as material sintering.

[0071] In other embodiments, the first type of target parameter includes a target heating rate, and the second type of target parameter includes a target heating temperature. When the current temperature of the high-temperature reactor is detected to have reached the control switching threshold corresponding to the target heating section, the target heating rate is switched to the target heating temperature. In this way, by switching the target parameter of the PID control when approaching the target heating temperature, temperature overshoot can be avoided, ensuring that the temperature remains stable near the target heating temperature.

[0072] For example, combined Figure 7 As shown, Figure 7 This is a flowchart illustrating a method for switching target parameters of PID control according to an exemplary embodiment of this application, which includes at least steps S710 to S730, detailed below: Step S710: Obtain the control parameter switching weights corresponding to the material to be heated.

[0073] In some embodiments, obtaining the control parameter switching weights corresponding to the material to be heated includes: obtaining material property parameters of the material to be heated, including one or more of specific heat capacity, thermal conductivity, and thermal stability threshold; querying a preset weight mapping table based on the material property parameters to obtain the control parameter switching weights corresponding to the material to be heated; wherein the preset weight mapping table stores the correspondence between the material property parameters and the preset weight mapping table. In this way, by associating the switching weights with the material property parameters, the subsequently calculated control switching thresholds can match the thermal characteristics of different materials (e.g., high thermal conductivity materials are prone to overshooting upon temperature rise and require earlier parameter switching; low thermal stability materials need to avoid high-temperature dwell times, and the switching thresholds need to be closer to the target temperature), solving the problem that fixed switching thresholds are difficult to adapt to different types of materials and improving adaptability.

[0074] For example, the material to be heated is an alumina ceramic blank, whose corresponding material property parameters include a specific heat capacity of 0.88 kJ / (kg). ℃), thermal conductivity 30W / (m K), thermal stability threshold 1250℃, according to the material property parameters, query the preset weight mapping table to obtain the control parameter switching weight corresponding to the material to be heated is 0.97.

[0075] For example, the material to be heated is polypropylene granules, whose corresponding material property parameters include a specific heat capacity of 1.9 kJ / (kg). ℃), thermal conductivity 0.2 W / (m K), thermal stability threshold 170℃, according to the material property parameters, query the preset weight mapping table to obtain the control parameter switching weight corresponding to the material to be heated, which is 0.95.

[0076] For example, the material to be heated is stainless steel powder, and its corresponding material property parameters include a specific heat capacity of 0.5 kJ / (kg). ℃), thermal conductivity 15W / (m K), thermal stability threshold 1400℃, according to the material property parameters, query the preset weight mapping table to obtain the control parameter switching weight corresponding to the material to be heated is 0.98.

[0077] Step S720: The target heating temperature is weighted and calculated according to the control parameter switching weight to obtain the control switching threshold.

[0078] For example, if the control parameter switching weight of the material to be heated is 0.9, and the target heating temperature corresponding to the target heating section is 600℃, then the control switching threshold obtained by weighted calculation is 540℃.

[0079] In other embodiments, if a matching control parameter switching weight is found in the preset weight mapping table, that weight is directly retrieved; if no matching control parameter switching weight is found, a base weight value is calculated based on specific heat capacity and thermal conductivity, and then corrected using a thermal stability threshold to obtain the control parameter switching weight. This allows for direct retrieval of weights for common system scenarios, avoiding complex real-time calculations each time, significantly reducing computational overhead and shortening response time. For unknown, new, or atypical operating conditions, the system does not simply report an error or use default values, but instead initiates an adaptive calculation process based on a physical model. This enables the system to handle situations not fully covered in the design phase, significantly improving robustness.

[0080] Step S730: When the current temperature of the high-temperature reactor is detected to have reached the control switching threshold, the target heating rate is switched to the target heating temperature.

[0081] In this embodiment, when the current temperature reaches the switching threshold (close to the target temperature but not yet the target), the PID control setpoint is switched from the target heating rate to the target heating temperature, thus reducing the heating power increase rate in advance and avoiding temperature overshoot caused by heating inertia. Simultaneously, after the switch, the PID control logic shifts from pursuing rate to maintaining temperature. By dynamically adjusting the heating power, it compensates for temperature fluctuations caused by environmental heat dissipation and changes in material heat absorption, ensuring a smooth transition from the heating phase to the holding phase and preventing sudden temperature increases or decreases.

[0082] In some embodiments, such as Figure 8 As shown, Figure 8 This is a schematic diagram of a PID control temperature-time curve shown in an exemplary embodiment of this application. Figure 8The system includes a first temperature rise curve and a second temperature rise curve. The first temperature rise curve is the constant-temperature PID control curve used in traditional technologies, while the second temperature rise curve is the uniform-rate heating PID control curve used in this application, and also the ideal temperature change curve for the high-temperature reactor. In this application, by first performing PID control based on the first target type parameter, i.e., the heating rate, and then dynamically correcting the target value of the PID control based on the remaining heating time, the system can adaptively adjust the control strategy according to the actual heating situation, effectively suppressing the influence of interference and parameter fluctuations, and significantly improving heating control accuracy. Furthermore, it does not require changing the existing heating process parameter settings on-site, and can directly adapt to heating processes of different materials, reducing upgrade costs and operational barriers, facilitating rapid promotion and application. Then, a switching mechanism is designed when the temperature approaches the target heating temperature to avoid temperature overshoot and ensure control safety. Compared to the temperature-based PID control method used in traditional technologies, the heating rate-based PID control method in this application has higher control accuracy, ensuring that the reactor is always near the ideal heating curve, avoiding the need to maintain a constant temperature in a relatively high-temperature zone due to excessively rapid heating, thus significantly reducing the energy consumption of the heating device.

[0083] In other embodiments, after performing PID control on the high-temperature reactor according to the second type of target parameters, the method further includes: if the heating time of the high-temperature reactor reaches the target heating time corresponding to the target heating segment, and the target heating segment is not the final heating segment of the material to be heated in the heating process, then the first type of target parameters and the second type of target parameters of the next heating segment adjacent to the target heating segment are obtained, and the high-temperature reactor is subjected to PID control according to the first type of target parameters and the second type of target parameters of the next heating segment.

[0084] In this embodiment, the heating time is used as the core judgment condition to ensure that the process requirements of the current heating segment are fully met before proceeding to the next segment, avoiding insufficient material reaction caused by entering the next heating segment before the current process is completed. Simultaneously, it prevents accidental triggering of the next segment switch at the end of the process, ensuring that the overall heating process is executed according to the preset process sequence and avoiding confusion in multi-segment control logic. This avoids thermal shock caused by temperature fluctuations during switching, ensuring sufficient material reaction in each heating segment, achieving fully automated continuous execution of the entire process, reducing manual intervention, improving production efficiency, and reducing batch variations.

[0085] It should be noted that the steps in this embodiment are consistent with the corresponding steps in the foregoing embodiments. Therefore, for a detailed description of these steps, please refer to the description in the foregoing embodiments. This embodiment will not repeat them here.

[0086] Combination Figure 9 As shown, Figure 9This is a flowchart illustrating a heating control method for a high-temperature reactor, as shown in another exemplary embodiment of this application. It includes at least steps S910 to S990, detailed below: Step S910: Obtain the target heating temperature and target heating time of the material to be heated in the target heating section.

[0087] Step S920: Determine the initial heating rate based on the target heating temperature and target heating time, and perform PID control on the high-temperature reactor based on the initial heating rate.

[0088] Step S930: Determine whether the target heating time has been reached; if not, proceed to step S940; if yes, proceed to step S990.

[0089] Step S940: Determine whether the current temperature of the high-temperature reactor has reached the control switching threshold; if not, proceed to step S950; if yes, proceed to step S980.

[0090] Step S950: Determine whether the dynamic correction interval of the heating rate has reached the preset time period; if not, proceed to step S960; if yes, proceed to step S970.

[0091] In step S960, continue PID control of the high-temperature reactor based on the current heating rate. Then return to step S950.

[0092] In step S970, the current heating rate of the high-temperature reactor is corrected to obtain the target heating rate, and PID control of the high-temperature reactor is performed based on the target heating rate. Then, the process returns to step S930.

[0093] In step S980, the target heating rate is switched to the target heating temperature, and PID control is applied to the high-temperature reactor based on the target heating temperature. Then, the process returns to step S930.

[0094] Step S990: Switch to the next target heating section and continue heating control until heating ends.

[0095] In this embodiment, by using the heating rate as a feedback quantity for PID control of the high-temperature reactor, the heating rate can be controlled in real time, avoiding rate fluctuations caused by traditional heating control that only focuses on temperature deviations. This ensures a uniform temperature rise throughout the heating section and improves the accuracy of heating control. Simultaneously, the heating rate is dynamically corrected at preset time intervals during PID control, allowing the system to adaptively adjust the control strategy based on the actual heating situation. This effectively suppresses the effects of interference and parameter fluctuations, significantly improving heating control accuracy and achieving uniform heating. Finally, when approaching the target heating temperature, the target parameter of the PID control is switched from the target heating rate to the target heating temperature, preventing temperature overshoot and ensuring the temperature remains stable near the target heating temperature. This effectively solves the problems of excessively rapid short-term heating and temperature overshoot, thus enabling more accurate heating control of the high-temperature reactor.

[0096] It should be noted that the steps in this embodiment are consistent with the corresponding steps in the foregoing embodiments. Therefore, for a detailed description of these steps, please refer to the description in the foregoing embodiments. This embodiment will not repeat them here.

[0097] Combination Figure 10 As shown, Figure 10 This is a structural diagram of a heating control device for a high-temperature reactor, illustrating an exemplary embodiment of this application. Figure 10 As shown, the exemplary high-temperature reactor heating control device includes: an acquisition module 1010, a first control module 1020, a switching module 1030, and a second control module 1040. The acquisition module 1010 is configured to acquire first-type target parameters corresponding to the material to be heated in the target heating section; wherein, the target heating section represents the process stage divided according to a preset heating process during the heating of the material to be heated, and different target heating sections correspond to different target heating temperatures and target heating durations; the first control module 1020 is configured to perform PID control on the high-temperature reactor according to the first-type target parameters and to detect the current temperature of the high-temperature reactor in real time; the switching module 1030 is configured to switch the first-type target parameters to second-type target parameters when the current temperature of the high-temperature reactor is detected to reach the control switching threshold corresponding to the target heating section; the second control module 1040 is configured to perform PID control on the high-temperature reactor according to the second-type target parameters.

[0098] In another exemplary embodiment, the first type of target parameter includes a target heating rate. The first control module 1020 is configured to perform PID control on the high-temperature reactor according to the first type of target parameter in the following manner: acquiring the target heating temperature and target heating time corresponding to the material to be heated in the target heating section; determining an initial heating rate according to the target heating temperature and target heating time, and performing PID control on the high-temperature reactor according to the initial heating rate; correcting the current heating rate of the high-temperature reactor every preset time period to obtain the target heating rate; and performing PID control on the high-temperature reactor according to the target heating rate.

[0099] In another exemplary embodiment, the first control module 1020 is further configured to correct the current heating rate of the high-temperature reactor at preset time intervals to obtain a target heating rate by: obtaining the current temperature difference between the target heating temperature and the current temperature; obtaining the remaining heating time of the material to be heated in the target heating section; and calculating the target heating rate based on the current temperature difference and the remaining heating time.

[0100] In another exemplary embodiment, the first control module 1020 is further configured to perform PID control on the high-temperature reactor based on the initial heating rate in the following manner: acquiring a first temperature detection value at a first moment and a second temperature detection value at a second moment; wherein the second moment is the moment preceding the first moment; calculating the current heating rate based on the first temperature detection value, the second temperature detection value, and the sampling time interval; if the current heating rate is less than the initial heating rate, controlling the heating power of the high-temperature reactor to increase, thereby increasing the heating rate of the high-temperature reactor; if the current heating rate is greater than the initial heating rate, controlling the heating power of the high-temperature reactor to decrease, thereby decreasing the heating rate of the high-temperature reactor.

[0101] In another exemplary embodiment, the first type of target parameter includes a target heating rate, and the second type of target parameter includes a target heating temperature. The switching module 1030 is configured to switch the first type of target parameter to the second type of target parameter when the current temperature of the high-temperature reactor is detected to reach the control switching threshold corresponding to the target heating section, including: obtaining the control parameter switching weight corresponding to the material to be heated; performing a weighted calculation on the target heating temperature according to the control parameter switching weight to obtain the control switching threshold; and switching the target heating rate to the target heating temperature when the current temperature of the high-temperature reactor is detected to reach the control switching threshold.

[0102] In another exemplary embodiment, the switching module 1030 is further configured to obtain the control parameter switching weights corresponding to the material to be heated by: obtaining the material property parameters of the material to be heated, including one or more of specific heat capacity, thermal conductivity, and thermal stability threshold; querying a preset weight mapping table according to the material property parameters to obtain the control parameter switching weights corresponding to the material to be heated; wherein the preset weight mapping table stores the correspondence between the material property parameters and the preset weight mapping table.

[0103] In another exemplary embodiment, after performing PID control on the high-temperature reactor according to the second type of target parameters, the method further includes: if the heating time of the high-temperature reactor reaches the target heating time corresponding to the target heating segment, and the target heating segment is not the final heating segment of the material to be heated in the heating process, then the first type of target parameters and the second type of target parameters of the next heating segment adjacent to the target heating segment are obtained; and the high-temperature reactor is subjected to PID control according to the first type of target parameters and the second type of target parameters of the next heating segment.

[0104] It should be noted that the heating control device for the high-temperature reactor provided in the above embodiments and the heating control method for the high-temperature reactor provided in the above embodiments belong to the same concept. The specific operation methods of each module and unit have been described in detail in the method embodiments and will not be repeated here. In practical applications, the heating control device for the high-temperature reactor provided in the above embodiments can be assigned to different functional modules as needed, that is, the internal structure of the device can be divided into different functional modules to complete all or part of the functions described above. This is not a limitation.

[0105] Embodiments of this application also provide an electronic device, including: one or more processors; and a storage device for storing one or more programs, which, when executed by the one or more processors, cause the electronic device to implement the heating control method for the high-temperature reactor provided in the above embodiments.

[0106] Figure 11 A schematic diagram of a computer system suitable for implementing the embodiments of this application is shown. It should be noted that... Figure 11 The computer system 1100 of the electronic device shown is merely an example and should not impose any limitation on the functionality and scope of use of the embodiments of this application.

[0107] like Figure 11As shown, the computer system 1100 includes a Central Processing Unit (CPU) 1101, which can perform various appropriate actions and processes based on programs stored in Read-Only Memory (ROM) 1102 or programs loaded from storage portion 1108 into Random Access Memory (RAM) 1103, such as performing the methods described in the above embodiments. Various programs and data required for system operation are also stored in RAM 1103. The CPU 1101, ROM 1102, and RAM 1103 are interconnected via bus 1104. An Input / Output (I / O) interface 1105 is also connected to bus 1104.

[0108] The following components are connected to I / O interface 1105: an input section 1106 including a keyboard, mouse, etc.; an output section 1107 including a cathode ray tube (CRT), liquid crystal display (LCD), etc., and speakers, etc.; a storage section 1108 including a hard disk, etc.; and a communication section 1109 including a model interface card such as a LAN (Local Area Network) card, modem, etc. The communication section 1109 performs communication processing via a model such as the Internet. A drive 1110 is also connected to I / O interface 1105 as needed. Removable media 1111, such as a disk, optical disk, magneto-optical disk, semiconductor memory, etc., are installed on drive 1110 as needed so that computer programs read from them can be installed into storage section 1108 as needed.

[0109] Specifically, according to embodiments of this application, the processes described above with reference to the flowcharts can be implemented as computer software programs. For example, embodiments of this application include a computer program product comprising a computer program carried on a computer-readable medium, the computer program including a computer program for performing the methods shown in the flowcharts. In such embodiments, the computer program can be downloaded and installed from the model via communication section 1109, and / or installed from removable medium 1111. When the computer program is executed by central processing unit (CPU) 1101, it performs various functions defined in the system of this application.

[0110] It should be noted that the computer-readable medium shown in the embodiments of this application can be a computer-readable signal medium or a computer-readable storage medium, or any combination of the two. A computer-readable storage medium can be, for example, an electrical, magnetic, optical, electromagnetic, infrared, or semiconductor system, apparatus, or device, or any combination thereof. More specific examples of a computer-readable storage medium may include, but are not limited to: an electrical connection having one or more wires, a portable computer disk, a hard disk, random access memory (RAM), read-only memory (ROM), erasable programmable read-only memory (EPROM), flash memory, optical fiber, portable compact disc read-only memory (CD-ROM), optical storage device, magnetic storage device, or any suitable combination thereof. In this application, a computer-readable signal medium may include a data signal propagated in baseband or as part of a carrier wave, carrying a computer-readable computer program. Such propagated data signals can take various forms, including but not limited to electromagnetic signals, optical signals, or any suitable combination thereof. Computer-readable signal media can also be any computer-readable medium other than computer-readable storage media, which can send, propagate, or transmit a program for use by or in connection with an instruction execution system, apparatus, or device. The computer program contained on the computer-readable medium can be transmitted using any suitable medium, including but not limited to wireless, wired, etc., or any suitable combination thereof.

[0111] Another aspect of this application provides a computer-readable storage medium storing a computer program that, when executed by a processor, implements the heating control method for a high-temperature reactor as described above. This computer-readable storage medium may be included in the electronic device described in the above embodiments, or it may exist independently and not incorporated into the electronic device.

[0112] Another aspect of this application provides a computer program product or computer program including computer instructions stored in a computer-readable storage medium. A processor of a computer device reads the computer instructions from the computer-readable storage medium and executes the computer instructions, causing the computer device to perform the heating control method for the high-temperature reactor provided in the various embodiments described above.

[0113] The above description is merely a preferred exemplary embodiment of this application and is not intended to limit the implementation of this application. Those skilled in the art can easily make corresponding modifications or alterations based on the main concept and spirit of this application. Therefore, the scope of protection of this application should be determined by the scope of protection claimed in the claims.

[0114] It is understood that in the specific embodiments of this application, data related to high-temperature reactors and materials to be heated are involved. When the above embodiments of this application are applied to specific products or technologies, user permission or consent is required, and the collection, use and processing of related data must comply with the relevant laws, regulations and standards of the relevant countries and regions.

Claims

1. A heating control method for a high-temperature reactor, characterized in that, include: Obtain the first type of target parameters corresponding to the target heating section of the material to be heated; wherein, the target heating section is used to represent the process stage divided according to the preset heating process during the heating process of the material to be heated, and different target heating sections correspond to different target heating temperatures and target heating durations; The high-temperature reactor is subjected to PID control based on the first type of target parameters, and the current temperature of the high-temperature reactor is detected in real time. When the current temperature of the high-temperature reactor is detected to have reached the control switching threshold corresponding to the target heating section, the first type of target parameter is switched to the second type of target parameter; The high-temperature reactor is subjected to PID control based on the second type of target parameters.

2. The method according to claim 1, characterized in that, The first type of target parameter includes a target heating rate, and the step of performing PID control on the high-temperature reactor based on the first type of target parameter includes: Obtain the target heating temperature and target heating duration of the material to be heated in the target heating section; The initial heating rate is determined based on the target heating temperature and the target heating time, and the high-temperature reactor is subjected to PID control based on the initial heating rate. The current heating rate of the high-temperature reactor is corrected at preset time intervals to obtain the target heating rate; The high-temperature reactor is subjected to PID control based on the target heating rate.

3. The method according to claim 2, characterized in that, The step of correcting the current heating rate of the high-temperature reactor at preset time intervals to obtain the target heating rate includes: Obtain the current temperature difference between the target heating temperature and the current temperature; Obtain the remaining heating time of the material to be heated in the target heating section; The target heating rate is obtained by calculating based on the current temperature difference and the remaining heating time.

4. The method according to claim 2, characterized in that, The step of performing PID control on the high-temperature reactor based on the initial heating rate includes: Obtain the first temperature detection value at the first moment and the second temperature detection value at the second moment; wherein, the second moment is the moment preceding the first moment; The current heating rate is calculated based on the first temperature detection value, the second temperature detection value, and the sampling time interval. If the current heating rate is less than the initial heating rate, the heating power of the high-temperature reactor is increased to improve the heating rate of the high-temperature reactor. If the current heating rate is greater than the initial heating rate, the heating power of the high-temperature reactor is reduced to decrease the heating rate of the high-temperature reactor.

5. The method according to claim 1, characterized in that, The first type of target parameter includes a target heating rate, and the second type of target parameter includes a target heating temperature. The step of switching the first type of target parameter to the second type of target parameter when the current temperature of the high-temperature reactor reaches the control switching threshold corresponding to the target heating section includes: Obtain the switching weights of the control parameters corresponding to the material to be heated; The target heating temperature is weighted and calculated based on the control parameter switching weights to obtain the control switching threshold. When the current temperature of the high-temperature reactor is detected to reach the control switching threshold, the target heating rate is switched to the target heating temperature.

6. The method according to claim 5, characterized in that, The step of obtaining the control parameter switching weights corresponding to the material to be heated includes: Obtain the material property parameters of the material to be heated, wherein the material property parameters include one or more of specific heat capacity, thermal conductivity, and thermal stability threshold; The control parameter switching weights corresponding to the material to be heated are obtained by querying a preset weight mapping table based on the material property parameters; wherein, the preset weight mapping table stores the correspondence between the material property parameters and the preset weight mapping table.

7. The method according to claim 1, characterized in that, After performing PID control on the high-temperature reactor according to the second type of target parameters, the method further includes: If the heating time of the high-temperature reactor reaches the target heating time corresponding to the target heating section, and the target heating section is not the final heating section of the material to be heated in the heating process, then the first type of target parameter and the second type of target parameter of the next heating section adjacent to the target heating section are obtained. The high-temperature reactor is subjected to PID control based on the first type of target parameters and the second type of target parameters of the next heating section.

8. A heating control device for a high-temperature reactor, characterized in that, include: The acquisition module is configured to acquire a first type of target parameters corresponding to the target heating section of the material to be heated; wherein, the target heating section is used to represent the process stage divided according to the preset heating process during the heating of the material to be heated, and different target heating sections correspond to different target heating temperatures and target heating durations; The first control module is configured to perform PID control on the high-temperature reactor according to the first type of target parameters, and to detect the current temperature of the high-temperature reactor in real time. The switching module is configured to switch the first type of target parameter to the second type of target parameter when it detects that the current temperature of the high-temperature reactor has reached the control switching threshold corresponding to the target heating section; The second control module is configured to perform PID control on the high-temperature reactor based on the second type of target parameters.

9. An electronic device, characterized in that, include: One or more processors; A storage device for storing one or more programs, which, when executed by one or more processors, cause the electronic device to implement the heating control method for a high-temperature reactor as described in any one of claims 1 to 7.

10. A computer-readable storage medium, characterized in that, It stores computer-readable instructions, which, when executed by the processor of a computer, cause the computer to perform the heating control method of the high-temperature reactor according to any one of claims 1 to 7.

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