Vapor phase growth apparatus and film formation method

Abstract

The invention provides a vapor phase growth apparatus and a film forming method, which can restrain reduction of film forming precision of a film formed on a surface of a wafer. A vapor phase growth apparatus according to an embodiment includes a susceptor that supports a wafer and a ring-shaped wafer guide that surrounds the wafer. The susceptor has a wafer support portion that supports the wafer from the lower side, a guide support portion that supports the wafer guide from the lower side, and an inner portion that is located radially inward of the wafer support portion. The upper surface of the inner side portion is located below the wafer contact surface of the wafer support portion. The wafer contact surface is positioned above the guide contact surface of the guide support portion. In the film formation process, the control unit measures the temperature of a portion of the wafer overlapping the wafer support portion by the first temperature sensor, and measures the temperature of a portion of the wafer overlapping the inner side portion by the second temperature sensor. And controls the first heating unit and the second heating unit on the basis of the measurement result of the first temperature sensor and the measurement result of the second temperature sensor.

Description

[0001] This application is based on Japanese Patent Application No. 2024-149832 (Filing Date: August 30, 2024) and claims priority thereto. This application incorporates the entire contents of the above-mentioned application by reference. TECHNICAL FIELD

[0002] Embodiments of the present application relate to a vapor phase growth apparatus and a film forming method. BACKGROUND

[0003] A vapor phase growth apparatus for forming a film on a surface of a wafer is known. In a film forming process in which a film is formed on a surface of a wafer in such a vapor phase growth apparatus, a susceptor on which the wafer is placed is rotated while being heated. In such a film forming process, for example, due to a wafer shift, an outer edge of the wafer enters between a ring-shaped wafer guide that surrounds the outer edge of the wafer and the susceptor, a deviation in temperature of the heated wafer becomes large, and the like, a deviation in thickness of the film formed on the wafer becomes large, a deviation in carrier concentration of the film formed on the wafer becomes large, and the like, and the film formation accuracy of the film formed on the wafer can decrease. SUMMARY

[0004] Embodiments provide a vapor phase growth apparatus and a film forming method that can suppress a decrease in film formation accuracy of a film formed on a surface of a wafer.

[0005] The gas phase growth apparatus of the embodiment is a gas phase growth apparatus for forming a film on a face of a wafer. The gas phase growth apparatus of the embodiment has: a susceptor that supports the wafer from a lower side; a drive section that rotates the susceptor around a rotation axis extending in a vertical direction; a ring-shaped wafer guide that is supported by the susceptor from the lower side and surrounds an outer edge of the wafer; a first temperature sensor and a second temperature sensor that can measure a temperature of the wafer; a first heating section and a second heating section that can heat the susceptor; and a control section that controls the first heating section and the second heating section. The susceptor has: a wafer supporting section that supports the wafer from the lower side; a guide supporting section that supports the wafer guide from the lower side at a position that is located outward of the wafer supporting section in a radial direction around the rotation axis; and an inner section that is located at a position that is located inward of the wafer supporting section in the radial direction. The wafer supporting section has a wafer contact surface that contacts the wafer. An upper surface of the inner section is located at a position that is lower than the wafer contact surface. The guide supporting section has a guide contact surface that contacts the wafer guide. The wafer contact surface is located at a position that is higher than the guide contact surface. The first heating section is located at a position that is outward of the second heating section in the radial direction. In film formation processing for forming a film on a face of the wafer, the control section measures a temperature of a portion of the wafer that overlaps the wafer supporting section as viewed in the vertical direction by the first temperature sensor, measures a temperature of a portion of the wafer that overlaps the inner section as viewed in the vertical direction by the second temperature sensor, and controls the first heating section and the second heating section based on the measurement results of the first temperature sensor and the second temperature sensor. BRIEF DESCRIPTION OF DRAWINGS

[0006] Figure 1 is a cross-sectional view that shows a gas phase growth apparatus of a first embodiment.

[0007] Figure 2 is a cross-sectional view that shows a portion of the gas phase growth apparatus of the first embodiment.

[0008] Figure 3 is a view that shows a portion of the gas phase growth apparatus of the first embodiment as viewed from an upper side.

[0009] Figure 4 is a cross-sectional view that shows a portion of the gas phase growth apparatus of the first embodiment when a wafer is being transported.

[0010] Figure 5 is a block diagram that shows a portion of the gas phase growth apparatus of the first embodiment.

[0011] Figure 6is a flowchart showing an example of a sequence of a film formation method using the vapor phase growth apparatus of Embodiment 1 to form a film on a surface of a wafer.

[0012] Figure 7 is a cross-sectional view showing a part of the vapor phase growth apparatus of Embodiment 2.

[0013] Figure 8 is a cross-sectional view showing a part of the vapor phase growth apparatus of Embodiment 3.

[0014] Figure 9 is a cross-sectional view showing a state in which a wafer is deformed in a film formation process using the vapor phase growth apparatus of Embodiment 3.

[0015] Symbol explanation:

[0016] 10, 110, 210: vapor phase growth apparatus; 30, 230: susceptor; 32: movable portion; 34, 134, 234: wafer support portion; 34c: first recessed portion; 34s, 234s: wafer contact surface; 35, 135, 235: guide support portion; 35s, 235s: guide contact surface; 36: inner portion; 36s: upper surface; 40, 240: wafer guide; 51: first heating portion; 52: second heating portion; 60: drive portion; 71: first temperature sensor; 72: second temperature sensor; 90: control portion; 234e: inclined surface; 239: second recessed portion; 239s: bottom surface; R: rotation axis; W: wafer; Z: vertical direction. DETAILED DESCRIPTION

[0017] Hereinafter, a vapor phase growth apparatus and a film formation method according to an embodiment will be described with reference to the drawings. In the drawings, a Z axis indicating a vertical direction is appropriately shown. A side (+Z side) toward which an arrow of the Z axis direction is directed is an upper side in the vertical direction, and a side (-Z side) opposite to the side toward which the arrow of the Z axis is directed is a lower side in the vertical direction. In the following description, the vertical direction will be referred to as "vertical direction Z", the upper side in the vertical direction Z will be simply referred to as "upper side", and the lower side in the vertical direction Z will be simply referred to as "lower side". Furthermore, in the drawings, a rotation axis R extending along the vertical direction Z is appropriately shown. The rotation axis R is an imaginary line. In the following description, unless otherwise specified, a radial direction with the rotation axis R as the center will be simply referred to as "radial direction", and a circumferential direction around the rotation axis R will be simply referred to as "circumferential direction".

[0018] (Embodiment 1)

[0019] Figure 1 is a cross-sectional view showing the vapor phase growth apparatus 10 of Embodiment 1. Figure 2 is a cross-sectional view showing a part of the vapor phase growth apparatus 10 of Embodiment 1. Figure 3is a view of a portion of the vapor-phase growth apparatus 10 of the first embodiment as viewed from the upper side. In addition, in Figure 3 the outer shape of the wafer W is indicated by a double-dot chain line. Figure 1 to Figure 3 The vapor-phase growth apparatus 10 illustrated is an apparatus for forming a film on a surface of a wafer W. In the vapor-phase growth apparatus 10, for example, an epitaxial film is formed on the surface of the wafer W by a CVD (Chemical Vapor Deposition) method. The film formed on the surface of the wafer W is, for example, a film composed of silicon carbide (SiC), that is, a SiC film. The film formed on the surface of the wafer W can also be a film composed of another material such as Si. The wafer W is formed of silicon carbide (SiC), for example. The wafer W can also be formed of another material such as silicon (Si). As illustrated in Figure 3 the wafer W is a substantially circular plate. A portion of the outer edge of the wafer W is a straight-line-shaped orientation flat portion Wd. The orientation flat portion Wd indicates, for example, a crystal orientation of a material constituting the wafer W. The other portion of the outer edge of the wafer W is in a circular arc shape. The wafer W is disposed in the vapor-phase growth apparatus 10 in a state in which a film formation surface Wa faces the upper side and a back surface Wb opposite to the surface Wa faces the lower side.

[0020] As illustrated in Figure 1 the vapor-phase growth apparatus 10 includes a chamber 20, a supply pipe 24, a susceptor 30, a wafer guide 40, a first heating portion 51, a second heating portion 52, a third heating portion 53, a drive portion 60, a first temperature sensor 71, and a second temperature sensor 72.

[0021] The chamber 20 houses the supply pipe 24, the susceptor 30, the wafer guide 40, the first heating portion 51, the second heating portion 52, the third heating portion 53, and the drive portion 60 inside. The chamber 20 is made of, for example, a metal such as stainless steel (SUS). The chamber 20 is a cylindrical shape extending along the vertical direction Z. A supply port 21 is formed in a top plate of the chamber 20. A discharge port 22 is formed in a bottom portion of the chamber 20. A gas G containing a raw material gas for forming a film on the wafer W is supplied from the supply port 21 to the inside of the chamber 20. A window portion 23 is formed in the top plate of the chamber 20. The window portion 23 is a portion through which infrared rays can be transmitted. The window portion 23 is located radially outward of the supply port 21, that is, radially farther from the rotation axis R than the supply port 21.

[0022] The supply pipe 24 is a cylindrical shape extending along the vertical direction Z. The supply pipe 24 is open at both the upper side and the lower side. The gas G supplied from the supply port 21 to the inside of the chamber 20 flows downward in the inside of the supply pipe 24. The gas G flowing downward in the inside of the supply pipe 24 is supplied to the wafer W placed on the susceptor 30. Excess gas G among the gas G supplied to the inside of the chamber 20 is discharged to the outside of the chamber 20 from the discharge port 22.

[0023] An epitaxial film is formed on the surface of wafer W by reacting a raw material gas contained in gas G on the surface of wafer W. The raw material gas is, for example, a gas containing Si-based gases and C-based gases. Examples of Si-based gases include silane (SiH4), dichlorosilane (SiH2Cl2), trichlorosilane (SiHCl3), and tetrachlorosilane (SiCl4). Examples of C-based gases include propane (C3H8). In the first embodiment, the raw material gas is, for example, a gas containing silane (SiH4) and propane (C3H8).

[0024] In the first embodiment, a working gas other than the raw material gas is also supplied into the chamber 20 from the supply port 21. Examples of such working gases include impurity gases, carrier gases, and hydrogen chloride (HCl) gas. Examples of impurity gases include N-type impurity gases such as nitrogen and P-type impurity gases such as TMA (trimethylaluminum). The carrier gas is, for example, argon or hydrogen. More specifically, the carrier gas used when the wafer W is placed into the vapor phase growth apparatus 10 and mounted on the substrate 30, and when the wafer W after film deposition is removed from the substrate 30 and moved out of the vapor phase growth apparatus 10, is argon. The carrier gas used during film deposition is hydrogen.

[0025] The base 30 is a support member that supports the wafer W from below. The base 30 is supported from below by the drive unit 60. Figure 2 As shown, the base 30 has a base body 31 and a movable portion 32. The base body 31 supports the wafer W from below. In the first embodiment, the base body 31 is annular around the rotation axis R. The base body 31 has an inner annular portion 33, a wafer support portion 34, and a guide support portion 35. Figure 3 As shown, the inner annular portion 33 is an annular shape surrounding the rotation axis R. In the first embodiment, the radial inner edge of the inner annular portion 33 is the radial inner edge of the base body 31.

[0026] The wafer support portion 34 is located radially outward from the inner annular portion 33. The wafer support portion 34 is the portion that supports the wafer W from below. The wafer support portion 34 is annular, surrounding the rotation axis R. The radially inner edge of the wafer support portion 34 is connected to the radially outer edge of the inner annular portion 33. In the first embodiment, the wafer support portion 34 has an arcuate portion 34a and a straight portion 34b. The arcuate portion 34a is the portion of the wafer support portion 34 that extends in an arcuate shape centered on the rotation axis R when viewed from the vertical direction Z. The central angle of the arcuate portion 34a is, for example, approximately 320°. The central angle of the arcuate portion 34a is not particularly limited. The straight portion 34b is the portion of the wafer support portion 34 that extends in a straight line when viewed from the vertical direction Z. The straight portion 34b connects one end of the arcuate portion 34a to the other end. The straight portion 34b is supported from below on the portion located radially inside the radial outer edge of the wafer W, specifically the portion located radially inside the orientation plane portion Wd. The arc portion 34a is supported from below on the portion located radially inside the radial outer edge of the wafer W, excluding the portion located radially inside the orientation plane portion Wd.

[0027] The wafer support portion 34 has a plurality of first recesses 34c recessed downward from the upper surface of the wafer support portion 34. The plurality of first recesses 34c are spaced apart circumferentially about the rotation axis R when viewed from the vertical direction Z. The plurality of first recesses 34c extend radially. In the first embodiment, the plurality of first recesses 34c penetrate the wafer support portion 34 radially. The upper surface of the wafer support portion 34 is interrupted by the plurality of first recesses 34c in the direction in which the wafer support portion 34 extends when viewed from the vertical direction Z. Figure 2 As shown, in the first embodiment, the bottom surface of the first recess 34c is located above the surface above the guide support portion 35, that is, above the guide contact surface 35s described later.

[0028] The wafer support portion 34 has a wafer contact surface 34s that contacts the wafer W. The wafer contact surface 34s is an upward-facing surface. The wafer contact surface 34s is the upper surface of the wafer support portion 34. The wafer contact surface 34s is located above the upper surface of the inner annular portion 33. For example... Figure 3 As shown, in the first embodiment, multiple wafer contact surfaces 34s are arranged at intervals around the rotation axis R when viewed from the vertical direction Z. Each of the multiple wafer contact surfaces 34s is an upper surface of a wafer support portion 34 that is divided into multiple first recesses 34c. In the first embodiment, each wafer contact surface 34s is a flat surface orthogonal to the vertical direction Z. In the first embodiment, the circumferential dimension of each wafer contact surface 34s decreases towards the radially inward direction. Alternatively, without forming multiple first recesses 34c, the wafer support portion 34 may have a single annular wafer contact surface 34s surrounding the rotation axis R.

[0029] The guide support portion 35 is located radially outward from the wafer support portion 34. In the first embodiment, the guide support portion 35 is annular around the rotation axis R. More specifically, the guide support portion 35 is approximately annular about the rotation axis R. The guide support portion 35 is the portion that supports the wafer guide 40 from below. Figure 2 As shown, in the first embodiment, the radially inner edge of the guide support portion 35 is connected to the radially outer edge of the wafer support portion 34. The guide support portion 35 has a guide contact surface 35s that contacts the wafer guide 40. The guide contact surface 35s is the portion of the upper surface of the wafer support portion 34 that contacts the wafer guide 40. In the first embodiment, the guide contact surface 35s is a plane orthogonal to the vertical direction Z. The guide contact surface 35s is located lower than each wafer contact surface 34s. In other words, each wafer contact surface 34s is located higher than the guide contact surface 35s. The guide contact surface 35s is located higher than the upper surface of the inner annular portion 33. Figure 3 As shown, in the first embodiment, the guide contact surface 35s is annular surrounding the rotation axis R. More specifically, the guide contact surface 35s is approximately annular with the rotation axis R as its center.

[0030] The movable part 32 is separate from the base body 31. The movable part 32 is disposed radially inside the inner annular part 33 of the base body 31. The movable part 32 engages with the radially inner side of the inner annular part 33 of the base body 31. In the first embodiment, an inner part 36 is formed by the movable part 32 and the inner annular part 33, located radially inside the wafer support part 34. The upper surface 36s of the inner part 36 is formed by the upper surface of the movable part 32 and the upper surface of the inner annular part 33. The upper surface 36s of the inner part 36 is located below the wafer contact surface 34s. The upper surface 36s of the inner part 36 is located below the guide contact surface 35s. When the wafer W is placed on the base 30, the back surface Wb of the wafer W is configured to move upward from the upper surface 36s of the inner part 36. A gap is provided between the wafer W in the vertical direction Z and the upper surface 36s of the inner side 36.

[0031] The movable part 32 is able to move in the vertical direction Z. Figure 4 This is a cross-sectional view showing a portion of the vapor phase growth apparatus 10 during wafer W transport. (Example) Figure 4As shown, during wafer W transport, the movable part 32 moves to a position higher than the inner annular part 33. In the first embodiment, the movable part 32 is moved in the vertical direction Z by the lifting part 80. The lifting part 80 has a plurality of movable pins 81 located below the movable part 32. The lifting part 80 moves the plurality of movable pins 81 upward, pushing the movable part 32 upward from below by the plurality of movable pins 81, thereby moving the movable part 32 upward. The plurality of movable pins 81 move to a position higher than the second heating part 52 through the gap provided in the second heating part 52, pushing the movable part 32 upward.

[0032] When the wafer W is transported onto the base 30, the wafer W, transported by the transport section 100, is placed on the movable section 32, which is located above the inner annular section 33. In this state, when the movable section 32 is moved downwards by the lifting section 80, the radially outer portion of the wafer W is supported from below by the wafer support section 34, placing the wafer W on the base 30. When the wafer W is transported from the base 30, the movable section 32 rises, lifting the wafer W to a position above the wafer support section 34 and the wafer guide 40. In this state, the wafer W is transported from the movable section 32 by the transport section 100.

[0033] The wafer guide 40 is supported from below by the base 30. The wafer guide 40 is annular in shape surrounding the rotation axis R. More specifically, as... Figure 3 As shown, the wafer guide 40 is annular about the axis of rotation R. The wafer guide 40 surrounds the outer edge of the wafer W. The wafer guide 40 is, for example, a plate with its surface facing the vertical direction Z. The wafer guide 40 is, for example, made of poly-SiC. The wafer guide 40 can also be made of graphite. In this case, a SiC coating can also be formed on the surface of the wafer guide 40.

[0034] like Figure 2 As shown, the wafer guide 40 is supported from below by the guide support portion 35. The lower surface of the wafer guide 40 contacts the guide contact surface 35s. In the first embodiment, the radially inner edge of the wafer guide 40 is located radially outer than the radially inner edge of the upper surface of the guide support portion 35. The lower surface of the wafer guide 40 is located lower than the wafer contact surface 34s. The upper surface of the wafer guide 40 is located higher than the upper surface of the wafer W placed on the wafer support portion 34, i.e., surface Wa. The upper end of the radially inner surface of the wafer guide 40 is located higher than the wafer contact surface 34s. That is, the wafer contact surface 34s is located lower than the upper end of the inner circumferential surface of the wafer guide 40.

[0035] Alternatively, a recessed portion in the vertical direction Z can be formed on one of the wafer guide 40 and the guide support portion 35, and a protruding portion in the vertical direction Z that fits into the recess can be formed on the other of the wafer guide 40 and the guide support portion 35. With this configuration, radial offset of the wafer guide 40 relative to the guide support portion 35 is suppressed.

[0036] like Figure 1 As shown, the drive unit 60 rotates the base 30 about a rotation axis R extending in the vertical direction Z. The drive unit 60 has a base holding part 61 and a power unit 62. The base holding part 61 is a cylindrical shape with an upward opening. The base 30 is held at the upper end of the base holding part 61. The base holding part 61 is located inside the chamber 20. The lower end of the base holding part 61 is located outside the chamber 20 via a hole formed in the bottom of the chamber 20. The power unit 62 rotates the base holding part 61 about the rotation axis R. The power unit 62 is, for example, a motor. The power unit 62 is connected to the lower end of the base holding part 61. Alternatively, the power unit 62 may also have a motor and a reduction gear connected to the motor. In this case, the rotation of the motor is transmitted to the base holding part 61 via the reduction gear. The power unit 62 is located outside the chamber 20, for example.

[0037] The first heating element 51 and the second heating element 52 are capable of heating the base 30. By heating the base 30 through the first heating element 51 and the second heating element 52, the wafer W and the wafer guide 40, which are in contact with the base 30, are heated. Figure 2 As shown, in the first embodiment, the first heating element 51 and the second heating element 52 are located on the lower side of the base 30. The first heating element 51 and the second heating element 52 apply heat H to the base 30 from below, thereby heating the base 30. The first heating element 51 and the second heating element 52 are located inside the base holding part 61 in the drive part 60. The first heating element 51 and the second heating element 52 are resistance heating type heaters. The first heating element 51 and the second heating element 52 are, for example, constructed of heating wires extending along a plane orthogonal to the vertical direction Z. The first heating element 51 and the second heating element 52 can have any structure as long as they can heat an object.

[0038] The first heating element 51 is located radially outward from the second heating element 52. The first heating element 51 surrounds the second heating element 52 radially outward. The first heating element 51 is located below the wafer support 34 and the guide support 35. At least a portion of the first heating element 51 overlaps with the wafer support 34 when viewed from the vertical direction Z. In the first embodiment, the radially inner edge of the first heating element 51 overlaps with the radially outer portion of the wafer support 34 when viewed from the vertical direction Z. The portion of the first heating element 51 located radially outward from the wafer support 34 overlaps with the guide support 35 when viewed from the vertical direction Z. The radially outer portion of the first heating element 51 overlaps with the wafer guide 40 when viewed from the vertical direction Z.

[0039] The second heating element 52 is located radially inward from the first heating element 51. The second heating element 52 is located below the inner portion 36. At least a portion of the second heating element 52 overlaps with the inner portion 36 when viewed from the vertical direction Z. In the first embodiment, the second heating element 52 is substantially entirely overlapped with the inner portion 36 when viewed from the vertical direction Z. The radially outer edge of the second heating element 52 is located below the inner annular portion 33. The portion of the second heating element 52 other than the radially outer edge is located below the movable portion 32.

[0040] like Figure 1 As shown, the third heating section 53 is annular, surrounding the supply pipe 24. In the first embodiment, the vapor phase growth apparatus 10 includes three third heating sections 53. The three third heating sections 53 are arranged at intervals in the vertical direction Z. Each third heating section 53 heats the gas G passing through the inside of the supply pipe 24. This increases the temperature of the gas G reaching the wafer W. Consequently, the deposition rate of the SiC film formed on the surface of the wafer W can be increased. Furthermore, the number of third heating sections 53 in the vapor phase growth apparatus 10 can be two or less, or four or more. The third heating section 53 is, for example, a resistance heater made of a heating wire. The third heating section 53 can have any structure as long as it can heat the object.

[0041] The first temperature sensor 71 and the second temperature sensor 72 are temperature sensors capable of measuring the temperature of the wafer W. In the first embodiment, the first temperature sensor 71 and the second temperature sensor 72 are radiation thermometers. The first temperature sensor 71 and the second temperature sensor 72 are located outside the chamber 20. The first temperature sensor 71 and the second temperature sensor 72 are located above the window 23. The first temperature sensor 71 and the second temperature sensor 72 measure the temperature of the wafer W by receiving infrared light emitted from the wafer W through the window 23. The first temperature sensor 71 and the second temperature sensor 72 can, for example, adjust their radial position.

[0042] likeFigure 2 As shown, the first temperature sensor 71 can measure the temperature of the portion of the wafer W that overlaps with the wafer support 34 when viewed from the vertical direction Z. The second temperature sensor 72 can measure the temperature of the portion of the wafer W that overlaps with the inner portion 36 when viewed from the vertical direction Z. In the first embodiment, the second temperature sensor 72 can measure the temperature of the portion of the wafer W located radially inward from the outer radial edge of the movable portion 32 and radially outward from the rotation axis R. The second temperature sensor 72 can also measure the temperature of the portion of the wafer W located radially inward from the radial center between the inner radial edge of the wafer support 34 and the rotation axis R.

[0043] Furthermore, in this specification, the phrase "a temperature sensor capable of measuring the temperature of a certain portion of the wafer" simply means that the temperature sensor can be positioned at a location capable of measuring the temperature of that portion of the wafer. In the first embodiment, the first temperature sensor 71 is movably positioned at a location capable of measuring the temperature of the portion of the wafer W that overlaps with the wafer support portion 34 when viewed from the vertical direction Z. The second temperature sensor 72 is movably positioned at a location capable of measuring the temperature of the portion of the wafer W that overlaps with the inner portion 36 when viewed from the vertical direction Z.

[0044] Figure 5 This is a block diagram showing a portion of the vapor phase growth apparatus 10. (Example) Figure 5 As shown, the vapor phase growth apparatus 10 includes a control unit 90. The control unit 90 controls various parts of the vapor phase growth apparatus 10. The control unit 90 controls the first heating unit 51, the second heating unit 52, the third heating unit 53, the drive unit 60, the lifting unit 80, and the conveying unit 100.

[0045] Figure 6 This is a flowchart illustrating an example of the sequence of a film formation method using a vapor phase growth apparatus 10 to form a film on the surface of a wafer W. For example... Figure 6 As shown, the control unit 90 places the wafer W on the base 30 (step S110). In step S110, the control unit 90 transports the wafer W through the transport unit 100, placing the wafer W on the base 30. Figure 4 The movable part 32 is shown in its upward position. The control unit 90 controls the lifting unit 80 to move the movable part 32 downward, placing the wafer W on the movable part 32 onto the wafer support part 34. Thus, the wafer W is placed on the base 30.

[0046] After the wafer W is placed on the substrate 30, the control unit 90 performs a film formation process (step S120) to form a film on the surface of the wafer W. That is, the film formation method of the first embodiment includes a film formation process to form a film on the surface of the wafer W. In the film formation process, the control unit 90 rotates the wafer W about the rotation axis R (step S121) and heats the wafer W (step S122). In the film formation process, the control unit 90 rotates the substrate 30 about the rotation axis R via the drive unit 60, thereby rotating the wafer W about the rotation axis R. In the film formation process, the control unit 90 heats the substrate 30 via the first heating unit 51 and the second heating unit 52, thereby heating the wafer W. The rotation and heating of the wafer W are performed until the film formation process is completed.

[0047] In the film formation process, the control unit 90 controls the temperature of the wafer W (step S123). In step S123, as... Figure 2 As shown, the control unit 90 measures the temperature of the portion of the wafer W that overlaps with the wafer support portion 34 when viewed from the vertical direction Z using the first temperature sensor 71. In step S123, the control unit 90 measures the temperature of the portion of the wafer W that overlaps with the inner portion 36 when viewed from the vertical direction Z using the second temperature sensor 72. In the first embodiment, in step S123, the control unit 90 measures the temperature of the portion of the wafer W located radially inward from the outer radial edge of the movable portion 32 and radially outward from the rotation axis R using the second temperature sensor 72. In step S123, the control unit 90 measures the temperature of the portion of the wafer W located radially inward from the radial center between the inner radial edge of the wafer support portion 34 and the rotation axis R using the second temperature sensor 72.

[0048] In step S123, the control unit 90 controls the first heating unit 51 and the second heating unit 52 based on the measurement results of the first temperature sensor 71 and the second temperature sensor 72. That is, the film formation process in the film formation method of the first embodiment includes controlling the first heating unit 51 and the second heating unit 52 based on the measurement results of the first temperature sensor 71 and the second temperature sensor 72.

[0049] In the first embodiment, in step S123, the control unit 90 controls the first heating unit 51 and the second heating unit 52 to ensure that the difference between the temperature measured by the first temperature sensor 71 and the temperature measured by the second temperature sensor 72 is below a predetermined value. That is, the film formation process in the film formation method of the first embodiment includes controlling the first heating unit 51 and the second heating unit 52 to ensure that the difference between the temperature measured by the first temperature sensor 71 and the temperature measured by the second temperature sensor 72 is below a predetermined value. This predetermined value is, for example, 10°C. This predetermined value may be lower than 10°C or higher than 10°C. The control unit 90 controls the first heating unit 51 and the second heating unit 52 to ensure that the temperature of the wafer W measured by the first temperature sensor 71 and the temperature of the wafer W measured by the second temperature sensor 72 are, for example, above 1500°C and below 1650°C. The first target temperature, set to a target value for the temperature of the wafer W measured by the first temperature sensor 71, and the second target temperature, set to a target value for the temperature of the wafer W measured by the second temperature sensor 72, are set within a temperature range of, for example, above 1500°C and below 1650°C. The first target temperature is, for example, 1600°C. The second target temperature is, for example, 1610°C.

[0050] In the film formation process, the control unit 90 directs gas G, containing raw material gas, into the chamber 20 from the supply port 21, supplying gas G to the wafer W (step S124). During the film formation process, the control unit 90 performs gas flow control to regulate the flow rate of gas G and pressure control within the chamber 20. By supplying raw material gas to the surface Wa of the heated wafer W, a SiC film is formed on the surface Wa of the wafer W. By continuously supplying the raw material gas to the wafer W for a predetermined time, a SiC film of the desired thickness is formed on the surface Wa of the wafer W. By supplying raw material gas to the surface Wa of the wafer W while rotating the wafer W around the rotation axis R via the drive unit 60, the amount of raw material gas supplied within the surface Wa of the wafer W and the deviation of the raw material gas can be reduced. Therefore, the uniformity of the film thickness formed on the wafer W can be improved. During the film formation process, the control unit 90 heats the gas G in the supply tube 24 via the third heating unit 53. When the film-forming process is finished, the control unit 90 stops the drive unit 60 and each heating unit, and stops the supply of gas G into the chamber 20.

[0051] Furthermore, step S123, which controls the temperature of the wafer W, is continuously performed, for example, during the film formation process. Step S123 may also be performed at predetermined intervals. Step S121, which rotates the wafer W, may also begin after the wafer W has been heated to a predetermined temperature and before the gas G is supplied.

[0052] After the film formation process is completed, the control unit 90 removes the wafer W from the vapor phase growth apparatus 10 (step S130). In step S130, the control unit 90 lifts the wafer W by raising the movable part 32 via the lifting part 80. The control unit 90 then transports the lifted wafer W via the transport part 100.

[0053] In conventional vapor deposition apparatuses, during film formation, wafer W sometimes shifts, with its outer edge entering the space between the wafer guide and the substrate. In this case, no film forms on the outer edge portion of the wafer W that enters this space, resulting in thickness variations and reduced film formation accuracy. Furthermore, during wafer transport, the wafer W may become snagged on the wafer guide, causing defects during transport. The film formation accuracy includes the uniformity of film thickness and the uniformity of carrier concentration.

[0054] To address the aforementioned problems, according to the first embodiment, the vapor phase growth apparatus 10 is a vapor phase growth apparatus for forming a film on the surface of a wafer W. The vapor phase growth apparatus 10 includes: a base 30 supporting the wafer W from below; a drive unit 60 that rotates the base 30 about a rotation axis R extending in the vertical direction Z; an annular wafer guide 40 supported from below by the base 30 and surrounding the outer edge of the wafer W; a first temperature sensor 71 and a second temperature sensor 72 capable of measuring the temperature of the wafer W; a first heating unit 51 and a second heating unit 52 capable of heating the base 30; and a control unit 90 that controls the first heating unit 51 and the second heating unit 52. The base 30 includes: a wafer support 34 supporting the wafer W from below; a guide support 35 located radially outward of the wafer support 34 about the rotation axis R, supporting the wafer guide 40 from below; and an inner portion 36 located radially inward of the wafer support 34. The wafer support portion 34 has a wafer contact surface 34s that contacts the wafer W. The upper surface 36s of the inner portion 36 is located below the wafer contact surface 34s. The guide support portion 35 has a guide contact surface 35s that contacts the wafer guide 40. The wafer contact surface 34s is located above the guide contact surface 35s. Therefore, when supported from below by the base 30, the back surface Wb of the wafer W is positioned above both the guide contact surface 35s and the lower surface of the wafer guide 40. Therefore, during the film deposition process, even if the wafer W moves radially outward, it is possible to prevent the wafer W from entering between the base 30 and the wafer guide 40. As a result, it is possible to prevent the film from failing to form at the outer edge of the wafer W. Consequently, it is possible to prevent a decrease in the film deposition accuracy of the film formed on the surface of the wafer W. Furthermore, during wafer W transport, it is possible to prevent the outer edge of the wafer W from hooking onto the wafer guide 40. Therefore, it is possible to prevent defects from occurring during wafer W transport.

[0055] Since the wafer contact surface 34s is located higher than the guide contact surface 35s, if the vertical Z-direction position of the upper surface 36s remains unchanged, the distance between the wafer contact surface 34s in the vertical Z-direction and the upper surface 36s of the inner portion 36 increases compared to the case where the wafer contact surface 34s and the guide contact surface 35s are positioned at the same vertical Z-direction. Therefore, the increased distance between the wafer W and the upper surface 36s of the inner portion 36 makes it difficult to transfer heat from the base 30 to the portion of the wafer W located above the inner portion 36. On the other hand, the portion of the wafer W that contacts the wafer contact surface 34s contacts the base 30, making it easier to transfer heat from the base 30. Consequently, the temperature difference between the radially inner portion and the radially outer portion of the wafer W tends to increase. If the temperature difference within the wafer W increases, the deviation in the thickness of the film formed on the surface of the wafer W and the deviation in the carrier concentration of the film may increase. Furthermore, if the surface Wa of the wafer W is etched before the film deposition process, a larger temperature difference within the wafer W surface may lead to a larger deviation in the etching amount. In this case, the thickness of the film formed on the surface Wa of the wafer W may further deviate. Therefore, even if the wafer W is prevented from entering between the wafer guide 40 and the substrate 30, the film deposition accuracy of the film formed on the wafer may be reduced. Moreover, a larger temperature difference within the wafer W surface may also cause crystal defects, i.e., dislocations, to occur on the wafer W.

[0056] To address the aforementioned problems, according to the first embodiment, the first heating section 51 is located radially outward from the second heating section 52. During the film formation process of forming a film on the surface of the wafer W, the control unit 90 measures the temperature of the portion of the wafer W that overlaps with the wafer support section 34 when viewed from the vertical direction Z using the first temperature sensor 71, and measures the temperature of the portion of the wafer W that overlaps with the inner side section 36 when viewed from the vertical direction Z using the second temperature sensor 72. Based on the measurement results of the first temperature sensor 71 and the second temperature sensor 72, the control unit 90 controls the first heating section 51 and the second heating section 52. In other words, the film formation process in the film formation method using the vapor phase growth apparatus 10 to form a film on the surface of a wafer W includes: measuring the temperature of the portion of the wafer W that overlaps with the wafer support 34 when viewed from the vertical direction Z using a first temperature sensor 71; measuring the temperature of the portion of the wafer W that overlaps with the inner side portion 36 when viewed from the vertical direction Z using a second temperature sensor 72; and controlling the first heating unit 51 and the second heating unit 52 based on the measurement results of the first temperature sensor 71 and the second temperature sensor 72. Therefore, the control unit 90 can measure the temperatures of the portions of the wafer W where the temperature tends to be high (i.e., the portion overlapping with the wafer support 34 in the vertical direction Z) and the portions of the wafer W where the temperature tends to be low (i.e., the portion overlapping with the inner side portion 36 in the vertical direction Z) using the first temperature sensor 71 and the second temperature sensor 72, respectively. Thus, the control unit 90 can adjust the output of the first heating unit 51 and the second heating unit 52 to prevent the temperature difference within the surface of the wafer W from increasing. Specifically, the control unit 90 controls, for example, the outputs of the first heating unit 51 and the second heating unit 52, to set the temperature of the portion of the wafer W overlapping the wafer support 34 in the vertical direction Z to 1600°C and the temperature of the portion of the wafer W overlapping the inner side portion 36 in the vertical direction Z to 1610°C. This allows for easy temperature rise of the portion of the wafer W overlapping the inner side portion 36 in the vertical direction Z, and prevents the temperature of the portion of the wafer W overlapping the wafer support 34 in the vertical direction Z from becoming excessively high. Consequently, it suppresses the increase in temperature difference within the wafer W surface. Therefore, it suppresses deviations in the thickness and carrier concentration of the film formed on the surface Wa of the wafer W. Therefore, even with a structure where the wafer contact surface 34s is located above the guide contact surface 35s, it suppresses the reduction in film formation accuracy on the surface of the wafer W. Furthermore, by suppressing the increase in temperature difference within the wafer W surface, it suppresses the formation of crystal defects on the wafer W.

[0057] As described above, according to the first embodiment, it is possible to suppress the wafer W from entering between the substrate 30 and the wafer guide 40, and to suppress the increase in temperature difference within the wafer W surface. Therefore, it is possible to more appropriately suppress the reduction in film deposition accuracy of the film formed on the surface of the wafer W. In addition, it is also possible to suppress the occurrence of defects during wafer W transport and the formation of crystallization defects on the wafer W.

[0058] Furthermore, since the wafer contact surface 34s is located above the guide contact surface 35s, even if reaction products (deposits) accumulate on the portion of the guide contact surface 35s that is radially inward compared to the radial inner edge of the wafer guide 40 during the film deposition process, it is possible to suppress the contact between these reaction products and the back surface Wb of the wafer W supported by the wafer contact surface 34s. Thus, it is possible to suppress the adhesion of reaction products to the back surface Wb of the wafer W.

[0059] According to the first embodiment, in the film formation process, the control unit 90 controls the first heating unit 51 and the second heating unit 52 to ensure that the difference between the temperature measured by the first temperature sensor 71 and the temperature measured by the second temperature sensor 72 is below a predetermined value. In other words, the film formation process includes controlling the first heating unit 51 and the second heating unit 52 to ensure that the difference between the temperature measured by the first temperature sensor 71 and the temperature measured by the second temperature sensor 72 is below a predetermined value. Therefore, it is easy to keep the temperature difference within the wafer W surface below a predetermined value, and it is possible to more appropriately suppress the increase of the temperature difference within the wafer W surface. Consequently, it is possible to further suppress the reduction of film formation accuracy on the surface of the wafer W.

[0060] According to the first embodiment, the wafer contact surface 34s is located below the upper end of the inner peripheral surface of the wafer guide 40. Therefore, it is possible to prevent the back surface Wb of the wafer W, which contacts the wafer contact surface 34s, from being located above the upper end of the inner peripheral surface of the wafer guide 40. As a result, even if the wafer W moves radially outward during the film deposition process, it is possible to prevent the wafer W from resting on the upper side of the wafer guide 40 and to prevent the wafer W from flying radially outward from the wafer support portion 34.

[0061] According to the first embodiment, the upper surface 36s of the inner portion 36 is located lower than the guide contact surface 35s. Therefore, even when the wafer W flexes downwards, contact between the back surface Wb of the wafer W and the upper surface 36s of the inner portion 36 can be suppressed, and the portion of the wafer W supported by the wafer support portion 34 can be prevented from floating. In this case, the distance between the wafer W and the upper surface 36s of the inner portion 36 becomes larger, and the temperature of the portion of the wafer W located above the inner portion 36 is more likely to decrease. However, as described above, by controlling the temperature with the control unit 90, the increase in the temperature difference within the wafer W surface can be suppressed. That is, in the configuration where the upper surface 36s of the inner portion 36 is located lower than the guide contact surface 35s, the effect of suppressing the increase in the temperature difference within the wafer W surface can be obtained more effectively.

[0062] According to the first embodiment, the inner portion 36 has a movable portion 32 that can move in the vertical direction Z. During the film deposition process, the control unit 90 measures the temperature of the portion of the wafer W located radially inward from the radial outer edge of the movable portion 32 and radially outward from the rotation axis R using the second temperature sensor 72. In other words, the film deposition process includes measuring the temperature of the portion of the wafer W located radially inward from the radial outer edge of the movable portion 32 and radially outward from the rotation axis R using the second temperature sensor 72. Therefore, compared to measuring the temperature of the portion of the wafer W located radially outward from the movable portion 32 using the second temperature sensor 72, it is possible to measure the temperature of the portion of the wafer W that moves further radially inward from the wafer support portion 34 using the second temperature sensor 72. The temperature of the wafer W tends to decrease as it moves radially inward from the wafer support portion 34. Therefore, the control unit 90 measures the temperature of the portion of the wafer W further radially inward from the wafer support 34 using the second temperature sensor 72, and controls the first heating unit 51 and the second heating unit 52, thereby further suppressing the increase of the temperature difference within the wafer W surface. Furthermore, the second temperature sensor 72 can measure the temperature of the portion of the wafer W located radially outward from the rotation axis R, thereby enabling circumferential temperature measurement throughout the radially inward portion of the wafer W. Therefore, compared to measuring the temperature of the center of the wafer W through which only the rotation axis R passes using the second temperature sensor 72, it is easier to measure the temperature of the wafer W more appropriately, and the increase of the temperature difference within the wafer W surface can be more appropriately suppressed.

[0063] According to the first embodiment, at least a portion of the first heating section 51 overlaps with the wafer support section 34 when viewed from the vertical direction Z. Therefore, by changing the output of the first heating section 51, the temperature of the wafer support section 34 can be easily adjusted. As a result, the temperature of the portion of the wafer W supported by the wafer support section 34 can be adjusted more easily.

[0064] According to the first embodiment, at least a portion of the second heating section 52 overlaps with the inner portion 36 when viewed from the vertical direction Z. Therefore, by changing the output of the second heating section 52, the temperature of the inner portion 36 can be easily adjusted. As a result, the temperature of the portion of the wafer W located above the inner portion 36 can be adjusted more easily.

[0065] According to the first embodiment, the wafer support portion 34 has a plurality of first recesses 34c recessed downward from the upper side of the wafer support portion 34, and is annular around the rotation axis R. The plurality of first recesses 34c are spaced apart circumferentially around the rotation axis R when viewed from the vertical direction Z. Because the wafer support portion 34 is annular, it is easier to support the wafer W more stably from below. Furthermore, by forming a plurality of first recesses 34c, the contact area between the wafer support portion 34 and the wafer W can be reduced. This makes it difficult for heat to be transferred from the wafer support portion 34 to the wafer W, further suppressing the temperature of the portion of the wafer W supported by the wafer support portion 34 from becoming too high. Furthermore, when the wafer W is mounted on the wafer support portion 34, gas in the space between the wafer W and the inner portion 36 is easily released to the outside via the plurality of first recesses 34c. Therefore, it is easy to place the wafer W on the annular wafer support 34, and it is possible to suppress the radial and rotational positional displacement of the wafer W when it is placed.

[0066] Hereinafter, embodiments different from the embodiments described above will be described. In the following descriptions of each embodiment, for configurations identical to those described earlier in the preceding paragraphs of the preceding embodiments, descriptions are sometimes omitted by appropriately using the same symbols, etc. Furthermore, for parts corresponding to each component of the configuration described earlier in the preceding paragraphs of the preceding embodiments, the same names are used, but different symbols are used. Differences from the above configurations will be described, while points identical to the above configurations will sometimes be omitted. In addition, for configurations omitted in the following embodiments, configurations identical to those described earlier in the preceding paragraphs of the preceding embodiments can be used, provided there is no contradiction.

[0067] (Second Implementation)

[0068] Figure 7 This is a cross-sectional view showing a portion of the vapor phase growth apparatus 110 according to the second embodiment. (Example) Figure 7 As shown, in the second embodiment, the base body 131 is formed by two components, a first component 131a and a second component 131b. The shape of the base body 131 formed by the two components, the first component 131a and the second component 131b, is the same as the shape of the base body 31 of the first embodiment, which is integrally formed.

[0069] The first component 131a and the second component 131b are annular around the rotation axis R. More specifically, the first component 131a and the second component 131b are approximately annular about the rotation axis R. The second component 131b is located above the first component 131a. The lower surface of the second component 131b contacts the upper surface of the first component 131a. The second component 131b is fixed to the first component 131a. The inner diameter of the second component 131b is larger than the inner diameter of the first component 131a. The radial inner edge of the first component 131a is located radially inward than the radial inner edge of the second component 131b. The portion of the first component 131a located radially inward than the radial inner edge of the second component 131b is an inner annular portion 33. The second component 131b includes a wafer support portion 134 having a wafer contact surface 34s and a guide support portion 135 having a guide contact surface 35s. The other configurations of the vapor phase growth apparatus 110 are the same as those of the vapor phase growth apparatus 10 in the first embodiment.

[0070] (Third Implementation)

[0071] Figure 8 This is a cross-sectional view showing a portion of the vapor phase growth apparatus 210 according to the third embodiment. (e.g.) Figure 8 As shown, in the base body 231 of the third embodiment, the wafer contact surface 234s of the wafer support portion 234 has a plane 234d and an inclined surface 234e. The plane 234d is the radially outer portion of the wafer contact surface 234s. The plane 234d is a flat surface orthogonal to the vertical direction Z. The inclined surface 234e is the radially inner portion of the wafer contact surface 234s. The inclined surface 234e is located on the lower side as it tends towards the radially inner side. The radially outer end of the inclined surface 234e is connected to the radially inner end of the plane 234d. In a cross-section orthogonal to the circumferential direction, the inclined surface 234e extends radially inward and downward at an inclined angle from the radially inner end of the plane 234d. The inclined surface 234e is connected to the radially inner surface of the wafer support portion 234. More specifically, the radially inner end of the inclined surface 234e is connected to the upper end of the radially inner surface of the wafer support portion 234. The radial dimension of the inclined surface 234e is larger than the radial dimension of the plane 234d. Alternatively, the radial dimension of the inclined surface 234e can be the same as or smaller than the radial dimension of the plane 234d. Although not shown in the figure, the wafer contact surfaces 234s are the same as in the first embodiment, with a plurality of them spaced apart in the circumferential direction.

[0072] Figure 9 This is a cross-sectional view showing the state in which the wafer W has deformed during the film formation process using the vapor phase growth apparatus 210 of the third embodiment. Figure 9As shown, during the film formation process, sometimes the wafer W deflects due to its own weight, etc., and in a cross-section along the rotation axis R, the wafer W bends into a downwardly convex shape. In this case, the radially outer portion of the wafer W supported from the lower side by the wafer support portion 234 has a shape that is located on the upper side as it tends to be radially outward. When the wafer W deforms into Figure 9 In that shape, the portion of the back surface Wb of the wafer W that contacts the wafer support 234 contacts the inclined surface 234e.

[0073] The base 230 has a connecting portion 238 located radially between the wafer support portion 234 and the guide support portion 235. The connecting portion 238 is annular, surrounding the rotation axis R. More specifically, the connecting portion 238 is annular, centered on the rotation axis R. The connecting portion 238 connects the radially outer edge of the wafer support portion 234 to the radially inner edge of the guide support portion 235. The upper surface of the connecting portion 238 is located lower than the wafer contact surface 234s of the wafer support portion 234 and the guide contact surface 235s of the guide support portion 235. Therefore, the base 230 has a downwardly recessed second recess 239 between the radially spaced wafer support portion 234 and guide support portion 235. The second recess 239 is annular, surrounding the rotation axis R. More specifically, the second recess 239 is annular, centered on the rotation axis R. The bottom surface 239s of the second recess 239 is located below the wafer contact surface 234s and the guide contact surface 235s. The bottom surface 239s of the second recess 239 is located below the bottom surface of the first recess 34c. The bottom surface 239s of the second recess 239 is the upper surface of the connecting portion 238.

[0074] The radial width of the wafer support portion 234 is greater than the radial width of the second recess 239. In other words, the radial distance between the inner radial end of the wafer support portion 234 and the outer radial end of the wafer support portion 234 is greater than the radial distance between the inner radial end of the second recess 239 and the outer radial end of the second recess 239.

[0075] In the third embodiment, the radial inner edge of the guide support portion 235 is located radially outer than the radial inner edge of the wafer guide 240. The radial inner edge of the guide contact surface 235s is located radially outer than the radial inner edge of the wafer guide 240. The other configurations of the base 230 are the same as those of the base 30 in the first embodiment. Alternatively, the base 230 may also be composed of two components as in the second embodiment.

[0076] In the third embodiment, the upper surface of the wafer guide 240 has a wafer guide inclined surface 241. The wafer guide inclined surface 241 is a radially inner portion of the upper surface of the wafer guide 240. The radially inner edge of the wafer guide inclined surface 241 is the radially inner edge of the upper surface of the wafer guide 240. The radially inner edge of the wafer guide inclined surface 241 is connected to the upper end of the radially inner side surface of the wafer guide 240. The wafer guide inclined surface 241 is located on the upper side as it tends to be radially outward. The wafer guide inclined surface 241 is annular around the rotation axis R. More specifically, when viewed from the vertical direction Z, the wafer guide inclined surface 241 is annular about the rotation axis R. By providing the wafer guide inclined surface 241, the gas G that flows radially outward after being blown onto the surface Wa of the wafer W from the upper side can be easily guided radially outward through the wafer guide inclined surface 241. As a result, the flow of gas G in the film deposition process can be adjusted. The radially inner end of the wafer guide 240 and the radially outer portion of the bottom surface 239s of the second recess 239 are spaced apart in the vertical direction Z. The other configurations of the wafer guide 240 are the same as those of the wafer guide 40 in the first embodiment.

[0077] In the film formation process of the third embodiment, the control unit 90 measures the temperature of the portion of the wafer W that overlaps with the inclined surface 234e when viewed from the vertical direction Z using the first temperature sensor 71. That is, in the film formation method of the third embodiment, the film formation process includes measuring the temperature of the portion of the wafer W that overlaps with the inclined surface 234e when viewed from the vertical direction Z using the first temperature sensor 71. Other controls of the control unit 90 are the same as those in the first embodiment. Other configurations of the vapor phase growth apparatus 210 are the same as those of the vapor phase growth apparatus 10 in the first embodiment.

[0078] According to the third embodiment, the wafer contact surface 234s has an inclined surface 234e that is located on the lower side as it tends towards the radially inward side. Therefore, in such... Figure 9 In the event that the wafer W is deformed, the back surface Wb of the wafer W can come into contact with the inclined surface 234e. Therefore, in such a case... Figure 9 In the event of deformation of the wafer W, it is easier to increase the contact area between the wafer W and the wafer support 234, and the wafer W can be stably supported from below by the wafer support 234. Furthermore, according to the third embodiment, during the film deposition process, the control unit 90 measures the temperature of the portion of the wafer W that overlaps with the inclined surface 234e when viewed from the vertical direction Z using the first temperature sensor 71. In other words, the film deposition process includes measuring the temperature of the portion of the wafer W that overlaps with the inclined surface 234e when viewed from the vertical direction Z using the first temperature sensor 71. Therefore, in such cases… Figure 9When the wafer W is deformed and its back surface Wb comes into contact with the inclined surface 234e, the temperature of the contact portion of the wafer W that is in contact with the inclined surface 234e, where the temperature is most likely to rise, can be measured by the first temperature sensor 71. Therefore, by controlling each heating element based on the measurement results of the first temperature sensor 71, the increase in temperature difference within the wafer W surface can be further suppressed. Consequently, the reduction in film deposition accuracy of the film formed on the surface of the wafer W can be further suppressed.

[0079] According to the third embodiment, the base 230 has a second recess 239 recessed downwards between the wafer support portion 234 and the guide support portion 235 in the radial direction. The bottom surface 239s of the second recess 239 is located lower than the guide contact surface 235s. Therefore, compared with the case where the second recess 239 is not provided, the portion of the upper surface of the base 230 located radially outside the wafer support portion 234 can be positioned away from the wafer W in the downward direction. As a result, the temperature of the radially outer edge of the wafer W can be suppressed from rising. Therefore, the temperature difference within the wafer W can be further suppressed. Furthermore, in the film deposition process, when reaction products (deposits) are deposited between the radially wafer contact surface 234s and the guide contact surface 235s in the upper surface of the base 230, the reaction products are deposited on the bottom surface 239s located lower than the guide contact surface 235s. This further suppresses the contact between the reaction products accumulated on the bottom surface 239s and the back surface Wb of the wafer W. Consequently, it further suppresses the adhesion of reaction products to the back surface Wb of the wafer W.

[0080] According to the third embodiment, the radial distance between the inner radial end of the wafer support portion 234 and the outer radial end of the wafer support portion 234 is greater than the radial distance between the inner radial end of the second recess 239 and the outer radial end of the second recess 239. Therefore, it is easy to increase the radial width of the wafer support portion 234, and the wafer W can be stably supported by the wafer support portion 234. In addition, it is possible to increase the radial width of the area where the wafer W overlaps with the wafer support portion 234 when viewed from the vertical direction Z, so that the temperature of the portion of the wafer W that overlaps with the wafer support portion 234 in the vertical direction Z can be easily measured by the first temperature sensor 71.

[0081] According to at least one embodiment described above, the vapor phase growth apparatus is a vapor phase growth apparatus for forming a film on the surface of a wafer. The vapor phase growth apparatus of the embodiment includes: a base supporting a wafer from below; a drive unit that rotates the base about a rotation axis extending in the vertical direction; an annular wafer guide supported from below by the base and surrounding the outer edge of the wafer; a first temperature sensor and a second temperature sensor capable of measuring the temperature of the wafer; a first heating unit and a second heating unit capable of heating the base; and a control unit that controls the first heating unit and the second heating unit. The base includes: a wafer support supporting the wafer from below; a guide support located radially outward of the wafer support about the rotation axis, supporting the wafer guide from below; and an inner portion located radially inward of the wafer support. The wafer support has a wafer contact surface that contacts the wafer. The upper surface of the inner portion is located lower than the wafer contact surface. The guide support has a guide contact surface that contacts the wafer guide. The wafer contact surface is located above the guide contact surface. The first heating section is located radially outward of the second heating section. In the film formation process of forming a film on the wafer surface, the control unit measures the temperature of the portion of the wafer that overlaps with the wafer support when viewed from the vertical direction using a first temperature sensor, and measures the temperature of the portion of the wafer that overlaps with the inner portion when viewed from the vertical direction using a second temperature sensor. Based on the measurement results of the first and second temperature sensors, the control unit controls the first and second heating sections. As described above, it is possible to suppress the wafer from entering between the substrate and the wafer guide, and to suppress the increase of the temperature difference within the wafer. Therefore, it is possible to appropriately suppress the reduction of film formation accuracy on the wafer surface.

[0082] In the film deposition process, if the control unit controls the first heating unit and the second heating unit based on the measurement results of the first temperature sensor and the second temperature sensor, then the control of the first heating unit and the second heating unit can be performed in any way. If the wafer contact surface is located above the guide contact surface, it can be positioned at the same vertical position as the upper end of the radially inner end of the wafer guide, or it can be positioned above the upper end of the radially inner end of the wafer guide. If the upper surface of the inner portion located radially inner than the wafer support is located below the wafer contact surface, it can be positioned at the same vertical position as the guide contact surface, or it can be positioned above the guide contact surface. Multiple wafer supports can also be provided at intervals around the rotation axis. The first temperature sensor and the second temperature sensor can be any type of temperature sensor if they are capable of measuring the temperature of the wafer. If the first heating unit is located radially outer than the second heating unit, then the configuration of the first heating unit and the second heating unit can be performed in any way. The inner side of the base may also not have a movable part that can move in the vertical direction.

[0083] The vapor phase growth apparatus and film formation method of the embodiments include the following appendix.

[0084] (Postscript 1)

[0085] A vapor phase growth apparatus for forming a film on the surface of a wafer, comprising:

[0086] The base supports the aforementioned wafer from below;

[0087] The drive unit causes the base to rotate about a rotation axis extending in the vertical direction;

[0088] An annular wafer guide, supported from below by the aforementioned base, surrounds the outer edge of the wafer;

[0089] The first and second temperature sensors are capable of measuring the temperature of the aforementioned wafer;

[0090] The first heating section and the second heating section are capable of heating the aforementioned base; and

[0091] The control unit controls the first heating unit and the second heating unit.

[0092] The aforementioned base has:

[0093] A wafer support portion supports the wafer from below;

[0094] The guide support portion, located radially outward from the wafer support portion about the aforementioned axis of rotation, supports the wafer guide from below; and

[0095] The inner portion is located radially inward from the wafer support portion.

[0096] The aforementioned wafer support portion has a wafer contact surface that contacts the aforementioned wafer.

[0097] The upper surface of the aforementioned inner portion is located below the aforementioned wafer contact surface.

[0098] The aforementioned guide support portion has a guide contact surface that contacts the aforementioned wafer guide.

[0099] The aforementioned chip contact surface is located above the aforementioned guide contact surface.

[0100] The first heating element is located radially outer of the second heating element.

[0101] In the film formation process of forming a film on the surface of the aforementioned wafer, the aforementioned control unit is,

[0102] The temperature of the portion of the wafer that overlaps with the wafer support portion when viewed from a vertical direction is measured using the first temperature sensor described above.

[0103] The temperature of the portion of the wafer that overlaps with the inner side when viewed from the vertical direction is measured using the second temperature sensor described above.

[0104] The first heating element and the second heating element are controlled based on the measurement results of the first temperature sensor and the second temperature sensor.

[0105] (Postscript 2)

[0106] In the vapor phase growth apparatus described in Appendix 1,

[0107] In the above film-forming process, the control unit controls the first heating unit and the second heating unit so that the difference between the temperature measured by the first temperature sensor and the temperature measured by the second temperature sensor is below a predetermined value.

[0108] (Note 3)

[0109] In the vapor phase growth apparatus described in Appendix 1 or Appendix 2,

[0110] The aforementioned wafer contact surface is located below the upper end of the inner peripheral surface of the aforementioned wafer guide.

[0111] (Postscript 4)

[0112] In any of the vapor phase growth apparatuses described in Appendix 1 to Appendix 3,

[0113] The upper surface of the inner part is located below the contact surface of the guide.

[0114] (Note 5)

[0115] In any of the vapor phase growth apparatuses described in Appendix 1 to Appendix 4,

[0116] The aforementioned inner portion has a movable part capable of moving in the vertical direction.

[0117] In the above-described film formation process, the control unit measures the temperature of the portion of the wafer located on the radially inner side of the outer edge of the movable part and on the radially outer side of the rotation axis using the second temperature sensor.

[0118] (Note 6)

[0119] In any of the vapor phase growth apparatuses described in Appendix 1 to Appendix 5,

[0120] At least a portion of the first heating part overlaps with the wafer support part when viewed from the vertical direction.

[0121] (Note 7)

[0122] In any of the vapor phase growth apparatuses described in Appendix 1 to Appendix 6,

[0123] At least a portion of the second heating part mentioned above overlaps with the inner part mentioned above when viewed from the vertical direction.

[0124] (Note 8)

[0125] In any of the vapor phase growth apparatuses described in Appendix 1 to Appendix 7,

[0126] The aforementioned wafer contact surface has an inclined surface, which is located on the lower side as it tends towards the radial inward side.

[0127] In the above film formation process, the control unit measures the temperature of the portion of the wafer that overlaps with the inclined surface when viewed from the vertical direction using the first temperature sensor.

[0128] (Note 9)

[0129] In any of the vapor phase growth apparatuses described in Appendix 1 to Appendix 8,

[0130] The aforementioned wafer support portion has a plurality of first recesses recessed downward from the upper side of the wafer support portion, and are annular in shape surrounding the aforementioned rotation axis.

[0131] When viewed from the vertical direction, the aforementioned plurality of first recesses are arranged at intervals around the aforementioned axis of rotation.

[0132] (Postscript 10)

[0133] In any of the vapor phase growth apparatuses described in Appendix 1 to Appendix 9,

[0134] The base has a second recess that is recessed downwards between the wafer support portion and the guide support portion in the radial direction.

[0135] The bottom surface of the second recess is located below the contact surface of the guide member.

[0136] (Postscript 11)

[0137] In the vapor phase growth apparatus described in Appendix 10,

[0138] The radial distance between the inner radial end of the wafer support portion and the outer radial end of the wafer support portion is greater than the radial distance between the inner radial end of the second recess and the outer radial end of the second recess.

[0139] (Postscript 12)

[0140] A film formation method involves forming a film on the surface of a wafer using a vapor phase growth apparatus, wherein...

[0141] The above-described film formation method includes a film formation process for forming a film on the surface of the above-described wafer.

[0142] The above-mentioned vapor phase growth apparatus includes:

[0143] The base supports the aforementioned wafer from below;

[0144] The drive unit causes the base to rotate about a rotation axis extending in the vertical direction;

[0145] An annular wafer guide, supported from below by the aforementioned base, surrounds the outer edge of the wafer;

[0146] The first temperature sensor and the second temperature sensor are capable of measuring the temperature of the aforementioned wafer; and

[0147] The first heating unit and the second heating unit are capable of heating the aforementioned base.

[0148] The aforementioned base has:

[0149] A wafer support portion supports the wafer from below;

[0150] The guide support portion, located radially outward from the wafer support portion about the aforementioned axis of rotation, supports the wafer guide from below; and

[0151] The inner portion is located radially inward from the wafer support portion.

[0152] The aforementioned wafer support portion has a wafer contact surface that contacts the aforementioned wafer.

[0153] The upper surface of the aforementioned inner portion is located below the aforementioned wafer contact surface.

[0154] The aforementioned guide support portion has a guide contact surface that contacts the aforementioned wafer guide.

[0155] The aforementioned chip contact surface is located above the aforementioned guide contact surface.

[0156] The first heating element is located radially outer of the second heating element.

[0157] The above film-forming treatment includes:

[0158] The temperature of the portion of the wafer that overlaps with the wafer support portion when viewed from the vertical direction is measured using the first temperature sensor described above.

[0159] The temperature of the portion of the wafer that overlaps with the inner side when viewed from a vertical direction is measured using the second temperature sensor described above; and

[0160] The first heating element and the second heating element are controlled based on the measurement results of the first temperature sensor and the second temperature sensor.

[0161] (Postscript 13)

[0162] In the film-forming method described in Appendix 12,

[0163] The above-mentioned film-forming process includes controlling the first heating unit and the second heating unit so that the difference between the temperature measured by the first temperature sensor and the temperature measured by the second temperature sensor is below a predetermined value.

[0164] (Postscript 14)

[0165] In the film-forming methods described in Appendix 12 or Appendix 13,

[0166] The aforementioned inner portion has a movable part capable of moving in the vertical direction.

[0167] The above-mentioned film formation process includes: measuring the temperature of the portion of the wafer located on the radial side inside the radial side of the movable part and on the radial side outside the radial side of the rotation axis by the second temperature sensor.

[0168] (Postscript 15)

[0169] In any of the film-forming methods described in Notes 12 to 14,

[0170] The aforementioned wafer contact surface has an inclined surface, which is located on the lower side as it tends towards the radial inward side.

[0171] The above film formation process includes: measuring the temperature of the portion of the wafer that overlaps with the inclined surface when viewed from the vertical direction using the first temperature sensor.

[0172] Several embodiments of the present invention have been described, but these embodiments are provided by way of example and are not intended to limit the scope of the invention. These embodiments can be implemented in various other ways, and various omissions, substitutions, and modifications can be made without departing from the spirit of the invention. These embodiments and their variations are included in the scope and spirit of the invention, and are also included in the scope of the invention described in the patent claims and its equivalents.

Claims

1. A vapor phase growth apparatus for forming a film on a surface of a wafer, comprising: a susceptor supporting the wafer from a lower side; a drive section rotating the susceptor about a rotation axis extending in a vertical direction; a ring-shaped wafer guide supported by the susceptor from the lower side and surrounding an outer edge of the wafer; a first temperature sensor and a second temperature sensor capable of measuring a temperature of the wafer; a first heating section and a second heating section capable of heating the susceptor; and a control section controlling the first heating section and the second heating section, wherein the susceptor has: a wafer supporting section supporting the wafer from the lower side; a guide supporting section supporting the wafer guide from the lower side at a position radially outward of the wafer supporting section with the rotation axis as a center; and an inner section at a position radially inward of the wafer supporting section, wherein the wafer supporting section has a wafer contact surface in contact with the wafer, wherein an upper surface of the inner section is at a position lower than the wafer contact surface, wherein the guide supporting section has a guide contact surface in contact with the wafer guide, wherein the wafer contact surface is at a position higher than the guide contact surface, wherein the first heating section is at a position radially outward of the second heating section, wherein in a film formation process for forming a film on a surface of the wafer, the control section: measures a temperature of a portion of the wafer overlapping with the wafer supporting section as viewed in the vertical direction by the first temperature sensor, measures a temperature of a portion of the wafer overlapping with the inner section as viewed in the vertical direction by the second temperature sensor, and controls the first heating section and the second heating section based on the measurement results of the first temperature sensor and the second temperature sensor.

2. The vapor phase growth apparatus according to claim 1, wherein in the film formation process, the control section controls the first heating section and the second heating section so that a difference between the temperature measured by the first temperature sensor and the temperature measured by the second temperature sensor is equal to or less than a predetermined value.

3. The vapor phase growth apparatus according to claim 1, wherein the wafer contact surface is at a position lower than an upper end portion of an inner peripheral surface of the wafer guide as viewed in the vertical direction.

4. The vapor phase growth apparatus according to claim 1, wherein the upper surface of the inner section is at a position lower than the guide contact surface.

5. The vapor phase growth apparatus according to claim 1, wherein the inner section has a movable section movable in the vertical direction, wherein in the film formation process, the control section measures a temperature of a portion of the wafer located radially inward of an outer edge of the movable section and radially outward of the rotation axis by the second temperature sensor.

6. The vapor phase growth apparatus according to any one of claims 1 to 5, wherein at least a portion of the first heating section overlaps with the wafer supporting section as viewed in the vertical direction.

7. The vapor phase growth apparatus according to any one of claims 1 to 5, wherein ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ At least a portion of the second heating section overlaps with the inner section when viewed in the vertical direction.

8. The vapor-phase growth apparatus according to any one of claims 1 to 5, wherein The wafer contact surface has an inclined surface that is located on the lower side as it approaches the inner side in the radial direction, In the film formation process, the control section measures the temperature of a portion of the wafer that overlaps with the inclined surface when viewed in the vertical direction, by the first temperature sensor.

9. The vapor-phase growth apparatus according to any one of claims 1 to 5, wherein The wafer support section has a plurality of first recesses that are recessed from the surface on the upper side of the wafer support section toward the lower side, and is annular that surrounds the rotation axis, The plurality of first recesses are arranged at intervals in the circumferential direction around the rotation axis when viewed in the vertical direction.

10. The vapor-phase growth apparatus according to any one of claims 1 to 5, wherein The susceptor has a second recess that is recessed toward the lower side between the wafer support section and the guide support section in the radial direction, The bottom surface of the second recess is located at a position that is lower than the guide contact surface.

11. The vapor-phase growth apparatus according to claim 10, wherein The radial distance between the inner end portion of the wafer support section in the radial direction and the outer end portion of the wafer support section in the radial direction is greater than the radial distance between the inner end portion of the second recess in the radial direction and the outer end portion of the second recess in the radial direction.

12. A film formation method of forming a film on a surface of a wafer using a vapor-phase growth apparatus, wherein The film formation method includes a film formation process of forming a film on the surface of the wafer, The vapor-phase growth apparatus includes: a susceptor that supports the wafer from the lower side; a drive section that rotates the susceptor around a rotation axis that extends in the vertical direction; an annular wafer guide that is supported by the susceptor from the lower side and surrounds the outer edge of the wafer; a first temperature sensor and a second temperature sensor that can measure the temperature of the wafer; and a first heating section and a second heating section that can heat the susceptor, The susceptor includes: a wafer support section that supports the wafer from the lower side; a guide support section that supports the wafer guide from the lower side at a position that is located on the outer side in the radial direction with the rotation axis as the center, relative to the wafer support section; and an inner section that is located at a position that is on the inner side in the radial direction relative to the wafer support section, The wafer support section has a wafer contact surface that contacts the wafer, The upper surface of the inner section is located at a position that is lower than the wafer contact surface, The guide support section has a guide contact surface that contacts the wafer guide, The wafer contact surface is located at a position that is on the upper side relative to the guide contact surface, The first heating section is located at a position that is on the outer side in the radial direction relative to the second heating section, The film formation process includes: measuring the temperature of a portion of the wafer that overlaps with the wafer support section when viewed in the vertical direction, by the first temperature sensor; measuring the temperature of a portion of the wafer that overlaps with the inner section when viewed in the vertical direction, by the second temperature sensor; and The first heating section and the second heating section are controlled based on the measurement result of the first temperature sensor and the measurement result of the second temperature sensor.

13. The film forming method according to claim 12, wherein The film forming process includes controlling the first heating section and the second heating section so that a difference between the temperature measured by the first temperature sensor and the temperature measured by the second temperature sensor is equal to or less than a predetermined value.

14. The film forming method according to claim 12 or 13, wherein The inner section has a movable section that is movable in the vertical direction, The film forming process includes measuring, by the second temperature sensor, a temperature of a portion of the wafer that is located inward of the outer edge of the movable section in the radial direction and outward of the rotation axis in the radial direction.

15. The film forming method according to claim 12 or 13, wherein The wafer contact surface has an inclined surface that is located on the lower side as it approaches the inner side in the radial direction, The film forming process includes measuring, by the first temperature sensor, a temperature of a portion of the wafer that overlaps the inclined surface when viewed in the vertical direction.

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