Multi-wafer excitation fluorescent powder LED light source for complementing 400-430nm blue light component and preparation method of multi-wafer excitation fluorescent powder LED light source

Abstract

The invention belongs to the technical field of LEDs, and particularly relates to a multi-wafer excitation fluorescent powder LED light source complementing 400-430 nm blue light components and a preparation method and application thereof, and the multi-wafer excitation fluorescent powder LED light source comprises a collaborative excitation unit and a spectrum complementing unit. According to the multi-wafer excitation fluorescent powder LED light source for complementing the 400-430 nm blue light component, the collaborative excitation unit is matched with the spectrum complementing unit, so that full spectrum coverage without obvious troughs at the 400-430 nm wave band is realized; particularly, aiming at the problem of spectrum completion of a 400-430nm wave band, through an innovative technical scheme of multi-wafer synergistic excitation and nitrogen oxide fluorescent powder doping modification, the light source is suitable for scenes with extremely high requirements on spectrum continuity and performance, such as museum cultural relic protection illumination, medical diagnosis illumination, plant factory precise seedling culture, high-end display backlight and the like.

Description

Technical Field

[0001] This invention belongs to the field of LED technology, and particularly relates to a multi-chip excitation phosphor LED light source that completes the 400-430nm blue light component, its preparation method and application. Background Technology

[0002] Full-spectrum LED light sources, due to their ability to replicate the continuous spectral characteristics of natural light, possess irreplaceable application value in fields with extremely high requirements for spectral quality and performance, such as museum artifact preservation lighting, medical diagnostic lighting, precision seedling cultivation in plant factories, and high-end display backlighting. In natural light, short-wavelength blue light in the 400-430nm band is not only a key carrier for visual signal transmission but also a core physiological signal source for regulating biological physiological rhythms (such as melatonin secretion). Its spectral integrity directly determines the upper limit of the quality and scene adaptability of full-spectrum LED light sources, becoming one of the core indicators for measuring whether a light source is "close to natural light."

[0003] However, existing full-spectrum LED technology has long been constrained by the technical dilemma that "the 400-430nm band cannot be completed." The industry has been unable to break through the three core "technical deadlocks," and the technical bias caused by traditional cognitive limitations has made this band a "bottleneck" problem in the development of full-spectrum light sources.

[0004] I. The excitation-emission matching paradox of wafers and phosphors.

[0005] Current full-spectrum solutions generally rely on the traditional architecture of "single-band chip excitation of phosphors," which is difficult to adapt to the energy characteristics and emission requirements of 400-430nm blue light. On the one hand, if the industry-standard 450nm blue light chip (photon energy 2.76eV) is used, its energy is lower than that of 400-430nm blue light (2.95-3.10eV), which fails to meet the basic physical conservation principle that "excitation photon energy ≥ emission photon energy," making it impossible to excite and generate 400-430nm wavelength light. On the other hand, if a 400nm deep ultraviolet chip (photon energy 3.10eV) is used to meet the energy requirements, conventional phosphors will experience severe performance degradation—light decay generally exceeds 50% after 100 hours, and excitation efficiency drops sharply to below 20%. Authoritative industry technical data has clearly stated that "the use of 400nm chips to excite visible light phosphors should be avoided," creating an unsolvable contradiction: "performance fails when energy meets the standard, and energy is insufficient when performance is stable."

[0006] II. Material design bottlenecks for 400-430nm dedicated phosphors.

[0007] To achieve stable emission in the 400-430nm band, phosphors must simultaneously meet three core indicators: "excitation peak close to 400nm, emission half-width ≤15nm, and light decay ≤5% after 1000 hours." However, existing material systems all have insurmountable defects and cannot meet application requirements.

[0008] Nitride phosphors: Conventional nitride phosphors, represented by SiAlON, have excitation peaks concentrated above 450nm, which are not effectively matched with high-energy excitation light around 400nm and cannot be excited by 400nm chips to produce 400-430nm blue light.

[0009] Oxide phosphors: Although they can be excited by 400nm crystals, their emission peaks generally fall above 500nm. Moreover, their crystal structure has poor resistance to high-energy photon impacts and is prone to lattice defects under strong 400nm light irradiation, resulting in a sharp drop in fluorescence intensity in a short period of time.

[0010] Fluoride phosphors: The emission peak of some fluoride phosphors can be as low as 420nm, barely covering part of the target wavelength. However, their chemical stability is extremely poor. They are prone to hydrolysis and failure in humid environments. Moreover, the overlap between their excitation spectrum and the excitation of a 400nm chip is less than 30%, resulting in low excitation efficiency. They cannot meet the stringent requirements for light source stability and consistency in high-end scenarios such as cultural relic protection and medical diagnosis.

[0011] Based on the aforementioned material defects, a technical bias has gradually formed in the industry that "there is no oxynitride phosphor that can be adapted to 400nm chips and stably emit 400-430nm blue light," which further restricts the direction of material research and development, leading to a "no materials available" dilemma for completing the 400-430nm band.

[0012] III. Performance limitations and scenario adaptability limitations of existing solutions.

[0013] Constrained by the aforementioned technological bottlenecks, existing full-spectrum LED light sources suffer from significant performance defects and limitations in scene adaptability. In terms of physiological adaptability, the lack of 400-430nm short-wavelength blue light prevents the light source from simulating the regulatory effect of natural light on biological physiological rhythms. Long-term use can easily lead to melatonin secretion disorders, affecting sleep quality and physiological health. In terms of scene applications, in the lighting for cultural relic preservation, spectral discontinuity causes color reproduction deviations exceeding 15%, failing to accurately represent the original appearance of the relics and potentially accelerating their aging. In plant factory seedling cultivation scenarios, 400-430nm blue light is a key energy source for the plant's PSII photosystem; the absence of this band can lead to a decrease of over 30% in plant PSII activity, significantly reducing seedling survival rate and growth quality.

[0014] More importantly, the industry has long been constrained by the traditional perception that "materials are unavailable," failing to realize the potential of nitride phosphors to achieve band shifting and stability improvement through lattice regulation and doping modification. This has created a blind spot in technology research and development, resulting in the inability of full-spectrum LED light sources to break through the technical barrier of completing the 400-430nm band, making it difficult to meet the urgent demand of high-end fields for "natural light-like" light sources. Summary of the Invention

[0015] The purpose of this invention is to provide a multi-chip excitation phosphor LED light source that completes the 400-430nm blue light component, breaking the technical prejudice that "400nm chips cannot stably excite oxynitride phosphors", and solving the three core problems of "directional emission of 400-430nm blue light by oxynitride phosphors", "multi-chip synergistic excitation matching", and "improved phosphor stability", so as to achieve a spectrum that is highly homologous to natural light.

[0016] To achieve the above objectives, embodiments of the present invention provide a multi-chip excitation phosphor LED light source for supplementing the 400-430nm blue light component, comprising:

[0017] A co-excitation unit is used to provide gradient energy photons to adapt to different spectral requirements. It includes at least a first exciter unit and a second exciter unit. The peak wavelength of the first exciter unit is in the range of 390-425nm and is used to provide high-energy excitation photons. The peak wavelength of the second exciter unit is in the range of 425-475nm and is used to connect spectral gaps.

[0018] The spectral completion unit can be excited by the first excitation subunit and directionally emit 400-430nm blue light. Under 400nm wavelength excitation, the spectral completion unit has light decay of ≤5% and excitation efficiency of ≥85% after 1000 hours.

[0019] Furthermore, the co-excitation unit includes 3-5 wafers with different peak wavelengths, and the spacing between each wafer is 0.1-0.5 mm; wherein, the power of the wafer in the 395-420nm range accounts for 10%-30%, and the total power of the wafer in the 430-470nm range accounts for 40%-70%.

[0020] Furthermore, the spectral completion unit is a oxynitride phosphor, and the oxynitride phosphor is used in... The matrix is ​​composed of activated ions and charge-compensating ions, where z = 0.5-1.5; the activated ions are... At least one of the following, with a doping amount of 0.3%-1.0 mol%; the charge compensation ion is At least one of the following, wherein the molar ratio of the activating ion to the charge compensation ion is 1:1.5-1:4.

[0021] Furthermore, the oxynitride phosphor is prepared by a multi-step sintering process, which includes at least a pre-sintering stage and a densification sintering stage; the temperature of the pre-sintering stage is 1450-1550℃, and the atmosphere is an inert gas; the temperature of the densification sintering stage is 1600-1700℃, and the atmosphere is a high-pressure inert gas with a pressure of 4-10 atm.

[0022] Furthermore, the surface of the oxynitride phosphor is coated with a composite protective layer, the composite protective layer being... The combination with a metal oxide, wherein the metal oxide is At least one of the following; the thickness of the composite protective layer is 2-8 nm, and the coating weight is 2.0%-6.0 wt%.

[0023] Furthermore, the multi-chip excitation phosphor LED light source that completes the 400-430nm blue light component also includes adhesive and at least one auxiliary phosphor. The adhesive, the auxiliary phosphor, and the spectral completion unit together constitute a phosphor adhesive system. The auxiliary phosphor includes a yellow-green phosphor with an emission peak wavelength of 500-560nm and a red phosphor with an emission peak wavelength of 620-680nm. The mass ratio of each component in the phosphor adhesive system is adjusted according to the set target color temperature, wherein the mass ratio of the spectral completion unit is 5%-20%.

[0024] Furthermore, the target color temperature is 2000K-7000K, the corresponding chromaticity coordinates fall within the preset 3rd order color tolerance ellipse in the CIE1931 chromaticity diagram, and the color rendering index Ra of the light source is ≥95, the spectral proportion of the 400-430nm band is ≥1.5%, and the SSI (350-830nm) is ≥90.

[0025] Furthermore, the spectral completion unit is excited by the first excitation subunit with a wavelength of 390-425nm to generate 400-430nm blue light, while the second excitation subunit with a wavelength of 425-475nm fills the spectral gap of 420-440nm, and the auxiliary phosphor completes the mid-to-long wavelength spectrum, thereby achieving full-spectrum continuous coverage.

[0026] This invention also provides a method for preparing a multi-chip excitation phosphor LED light source that completes the 400-430nm blue light component, comprising the following steps:

[0027] S100: Fix each chip of the co-excitation unit in the functional area of ​​the bracket, arrange them in the preset position and solidify them;

[0028] S200: The electrodes of each wafer are connected to the substrate through a bonding process;

[0029] S300: Formulate a fluorescent adhesive system with the corresponding target color temperature, and cure it by dispensing and baking in stages;

[0030] S400: Cuts, threshes, splits, and reeles the cured light source.

[0031] This invention also provides an application of a multi-chip excitation phosphor LED light source that completes the 400-430nm blue light component, which is used in lighting scenarios where spectral continuity is required to be ≥90%. The lighting scenarios include at least one of cultural relic protection lighting, medical diagnostic lighting, plant cultivation lighting, high-end display backlighting, and high-end indoor lighting.

[0032] The multi-crystal excitation phosphor LED light source for completing the 400-430nm blue light component provided in this invention, its preparation method, and its application have at least one of the following technical effects: In the multi-crystal excitation phosphor LED light source for completing the 400-430nm blue light component of this invention, the synergistic excitation unit and the spectral completion unit work together to achieve full spectral coverage without obvious valleys in the 400-430nm band; especially for the spectral completion problem in the 400-430nm band, the innovative technical solution of "multi-crystal synergistic excitation + oxynitride phosphor doping modification" is applicable to scenarios with extremely high requirements for spectral continuity and performance, such as museum artifact protection lighting, medical diagnostic lighting, precision seedling cultivation in plant factories, and high-end display backlighting. Attached Figure Description

[0033] To more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0034] Figure 1 This is a schematic diagram of the structure of a multi-chip excitation phosphor LED light source that completes the 400-430nm blue light component, provided in an embodiment of the present invention.

[0035] Figure 2 This is a spectrum of a 2700K LED light source in the prior art.

[0036] Figure 3 This invention provides a multi-chip excitation phosphor LED light source that completes the 400-430nm blue light component. Spectrum of co-doped silicon oxynitride phosphor.

[0037] Figure 4The bin diagram of a 2700K multi-chip excitation phosphor LED light source with a complete 400-430nm blue light component is provided for embodiments of the present invention.

[0038] Figure 5 The spectrum of a multi-chip excited phosphor LED light source with a complete 400-430nm blue light component is provided for embodiments of the present invention.

[0039] Figure 6 A spectral comparison diagram of a multi-chip excitation phosphor LED light source with a complete 400-430nm blue light component provided in this embodiment of the invention and a 2700K light source in the prior art.

[0040] Figure 7 This is a spectrum of a 4000K LED light source in the prior art.

[0041] Figure 8 The bin diagram of a 4000K multi-chip excitation phosphor LED light source with a complete 400-430nm blue light component is provided for embodiments of the present invention.

[0042] Figure 9 The spectrum of a multi-chip excited phosphor LED light source with a complete 400-430nm blue light component is provided for embodiments of the present invention.

[0043] Figure 10 A spectral comparison diagram of a multi-chip excitation phosphor LED light source with a complete 400-430nm blue light component provided in this embodiment of the invention and a 4000K light source in the prior art.

[0044] Figure 11 This is a spectrum of a 5700K LED light source in the prior art.

[0045] Figure 12 The bin diagram of a 2700K multi-chip excitation phosphor LED light source with a complete 400-430nm blue light component is provided for embodiments of the present invention.

[0046] Figure 13 The spectrum of a multi-chip excited phosphor LED light source with a complete 400-430nm blue light component is provided for embodiments of the present invention.

[0047] Figure 14 A spectral comparison diagram of a multi-chip excitation phosphor LED light source with a complete 400-430nm blue light component provided in this embodiment of the invention and a 2700K light source in the prior art.

[0048] The following are the labeling elements in the figure:

[0049] 1—410nm wafer, 2—440nm wafer, 3—455nm wafer, 4—465nm wafer. Detailed Implementation

[0050] The following is in conjunction with the appendix Figure 1-14 The embodiments of the present invention are described in detail below. These embodiments are exemplary and intended to explain the embodiments of the present invention, and should not be construed as limiting the present invention.

[0051] In one embodiment of the present invention, such as Figure 1 As shown, a multi-chip excitation phosphor LED light source that completes the 400-430nm blue light component is provided, comprising:

[0052] A co-excitation unit is used to provide gradient energy photons to adapt to different spectral requirements. It includes at least a first exciter unit and a second exciter unit. The peak wavelength of the first exciter unit is in the range of 390-425nm and is used to provide high-energy excitation photons. The peak wavelength of the second exciter unit is in the range of 425-475nm and is used to connect spectral gaps.

[0053] The spectral completion unit can be excited by the first excitation subunit and directionally emit 400-430nm blue light. Under 400nm wavelength excitation, the spectral completion unit has light decay of ≤5% and excitation efficiency of ≥85% after 1000 hours.

[0054] In the multi-chip excited phosphor LED light source of this invention, which completes the blue light component in the 400-430nm band, the synergistic excitation unit and the spectral completion unit work together to achieve full spectral coverage without obvious valleys in the 400-430nm band. Especially addressing the challenge of spectral completion in the 400-430nm band, the innovative technical solution of "multi-chip synergistic excitation + oxynitride phosphor doping modification" is suitable for scenarios with extremely high requirements for spectral continuity and performance, such as museum artifact preservation lighting, medical diagnostic lighting, precision seedling cultivation in plant factories, and high-end display backlighting.

[0055] In this embodiment, the co-excitation unit includes 3-5 wafers with different peak wavelengths, and the spacing between each wafer is 0.1-0.5 mm; wherein, the power of the wafer in the 395-420nm range accounts for 10%-30%, and the total power of the wafer in the 430-470nm range accounts for 40%-70%.

[0056] In this embodiment, the spectral completion unit is an oxide nitride phosphor, and the oxide nitride phosphor is used as... The matrix is ​​composed of activated ions and charge-compensating ions, where z = 0.5-1.5; the activated ions are... At least one of the following, with a doping amount of 0.3%-1.0 mol%; the charge compensation ion is At least one of the following, wherein the molar ratio of the activating ion to the charge compensation ion is 1:1.5-1:4.

[0057] This invention also provides a method for preparing a multi-chip excitation phosphor LED light source that completes the 400-430nm blue light component, comprising the following steps:

[0058] S100: Fix each chip of the co-excitation unit in the functional area of ​​the bracket, arrange them in the preset position and solidify them;

[0059] S200: The electrodes of each wafer are connected to the substrate through a bonding process;

[0060] S300: Formulate a fluorescent adhesive system with the corresponding target color temperature, and cure it by dispensing and baking in stages;

[0061] S400: Cuts, threshes, splits, and reeles the cured light source.

[0062] This invention also provides an application of a multi-chip excitation phosphor LED light source that completes the 400-430nm blue light component, which is used in lighting scenarios where spectral continuity is required to be ≥90%. The lighting scenarios include at least one of cultural relic protection lighting, medical diagnostic lighting, plant cultivation lighting, high-end display backlighting, and high-end indoor lighting.

[0063] The multi-chip excited phosphor LED light source in this embodiment of the invention, which completes the 400-430nm blue light component, adopts "multi-band chip energy gradient excitation". The innovative architecture of "directional emission from co-doped silicon oxynitride phosphor" represents a core breakthrough in the band modulation and stability optimization of oxide oxynitride phosphors, combined with... Figure 1 The specific plan is as follows:

[0064] 1. Four-band co-excitation wafer set (maintaining the architecture, optimizing parameters to adapt to oxynitride).

[0065] Composed of wafers with peak wavelengths of 410nm (±5nm), 440nm (±5nm), 455nm (±5nm), and 465nm (±5nm), it achieves precise excitation through "energy gradient + spatial array":

[0066] Energy gradient design (adapted to nitrous oxide excitation characteristics):

[0067] 410nm wafer 1 (power ratio 15%-20%): provides 3.10eV high-energy photons to excite specially made oxynitride phosphors; through power ratio optimization, it matches the slightly higher excitation threshold of oxynitride phosphors, while controlling the excited energy density ≤ "crystal stability threshold" (experimental verification 1000 hours of light decay ≤ 3%).

[0068] 440nm chip 2 (power ratio 25%-30%): emits 435-445nm blue light, which is seamlessly connected with the phosphor's 405-428nm emission spectrum, filling the gap in 428-435nm;

[0069] 455nm wafer 3 (power ratio 28%-33%): Excitation of conventional YAG yellow powder, GAYAG / LuAG green powder, Pink, completing the 450-800nm ​​mid-to-long wavelength band;

[0070] 465nm chip 4 (power ratio 22%-25%): Adjusts the blue light band balance to avoid the "spectral peak" caused by 455nm chip 3, ensuring that the fluctuation between 400-465nm is ≤5%;

[0071] Spatial array optimization: A "ring nested arrangement" is adopted (410nm wafer 1 is centered, and 440nm / 455nm / 465nm wafer 4 is centered), with a spacing of 0.15-0.35mm, which improves the excitation uniformity of oxynitride phosphors (oxynitride is more sensitive to excitation light distribution).

[0072] Co-doped silicon oxynitride phosphor (core innovation: breakthrough in nitrogen oxide modification).

[0073] design" activation, Charge compensation Silicon oxynitride phosphor achieves directional emission in the 400-430nm range through lattice modulation and doping synergy.

[0074] Innovative doping mechanism (solving the problem of matching excitation and emission of nitride oxides):

[0075] Matrix selection: Select As a matrix, the lattice field splitting energy of its hexagonal crystal structure can be tuned by the Al / O substitution amount—when the z-value increases from 0.8 to 1.2, the crystal field strength increases by 20%-25%, making... The emission peak of the 5d→4f transition is redshifted from 450nm to around 420nm, precisely covering the 405-435nm range;

[0076] Co-doping synergy: Single doping hour, It easily occupies Si / Al lattice sites, leading to charge imbalance and resulting in broadening of the excitation peak (full width at half maximum exceeding 30 nm); introducing As a charge compensator This can eliminate lattice defects, narrow the excitation peak to 25nm full width at half maximum (FWHM), increase the excitation overlap with the 410nm wafer 1 from 35% to over 88%, and increase the excitation efficiency from 55% to 91%.

[0077] Stability enhancement design (solving the problem of nitrogen oxides' resistance to high-energy impact):

[0078] Lattice densification: A two-step sintering process is adopted—the first step is pre-sintering at 1500℃ in a nitrogen atmosphere (2 hours), and the second step is densification sintering at 1650℃ under high pressure nitrogen (5-8 atm) (3 hours), which reduces lattice voids and reduces the impact damage of 410nm photons to the crystal by 60%;

[0079] Surface modification: Coating the surface of phosphor particles with 3-5 nm of... The composite layer (mass ratio 3:1) was prepared by the sol-gel method, which not only blocked the direct irradiation of 410nm photons, but also improved the hydrolysis resistance (fluorescence intensity retention rate ≥98% after 24 hours of immersion, far exceeding the 80% of conventional nitrogen oxides).

[0080] Key parameter control: Doping concentration: 0.5%-0.8% (to avoid concentration quenching). With a doping amount of 1.0%-2.0%, the final phosphor quantum yield is ≥90%, and the light decay under 400nm excitation for 1000 hours is ≤3%.

[0081] Optimization scheme for co-doped oxynitride phosphor (for 400-430nm completion).

[0082] I. Precise Control of Matrix Composition .

[0083]

[0084] Table 1

[0085] two, Optimization of co-doped systems.

[0086] 1. The relationship between doping ratio and performance.

[0087]

[0088] Table 2

[0089] In Table 2 above, excess hour, It easily forms lattice interstitial defects, leading to broadening of the excitation peak; When the concentration exceeds 0.85 mol%, a significant concentration quenching occurs (fluorescence intensity drops sharply by ≥15%).

[0090] 2. Dopant ion occupancy analysis (XPS and Raman spectroscopy verification).

[0091] Placeholder: Mainly occupying Lattice sites (binding energy 1135.2 eV, corresponding to) Peak), small amount of substitution (Binding energy 1134.8 eV), none Scattered peaks (no signal at 1136.5 eV).

[0092] effect: (Binding energy 55.8 eV) mainly distributed in Surrounding, forming Charge-compensated pairs in Raman spectroscopy The intensity of the Si-N bond vibration peak increased by 20%, which proves that the lattice order was improved.

[0093] III. Optimization of preparation process parameters.

[0094] 1. Two-step sintering process.

[0095]

[0096] Table 3

[0097] In Table 3 above, when the pressure is <5 atm, the relative density is <92% and the lattice porosity exceeds 5%; when the pressure is >8 atm, abnormal grain growth (particle size >10 μm) is likely to occur, resulting in a decrease in dispersibility.

[0098] 2. Surface modification process ( Composite coating).

[0099]

[0100] Table 4

[0101] In Table 4 above, the step-by-step coating (first coating) Then wrap It can improve the interfacial bonding force. When the coating amount exceeds 5wt%, the fluorescence intensity decreases by ≥5% (the coating layer enhances light scattering).

[0102] IV. Core performance test data (compared with conventional oxynitride phosphors).

[0103]

[0104] Table 5

[0105] In Table 5 above, conventional SiAlON phosphors have an excitation peak around 450nm, so they have almost no effective emission under 400nm excitation and have extremely poor resistance to high-energy photon (400nm) impact, with light decay exceeding 50% after 1000h.

[0106] Packaged into finished product:

[0107] A. The warm white light 2700K scheme of the present invention.

[0108] 1) Existing technical solutions (the most comprehensive full-spectrum solution).

[0109] 1.1.1 Chip Solution:

[0110] A conventional phosphor excitation scheme using LED chips with peak wavelengths of 405-415nm, 435-445nm, 450-460nm, and 460-470nm:

[0111] Existing spectra such as Figure 2 As shown, there is a clear trough phenomenon at 1A, that is, there is an unfillable phenomenon in the 400-430nm range.

[0112] 1.1.2 The test data is shown in Table 6 below:

[0113]

[0114] Table 6

[0115] 2) The present invention provides a scheme for a 2700K multi-chip excitation phosphor LED light source to supplement the 400-430nm blue light component: The LED light source fabrication method of this embodiment:

[0116] S100: N LED chips are placed on the functional area electroplating layer of the cup-shaped bracket and fixed with insulating glue or silver paste using a die bonder. The N LED chips include M violet LED chips with a peak wavelength of 405-415nm, P blue LED chips with a peak wavelength of 435-445nm, Q blue LED chips with a peak wavelength of 450-460nm, and S blue LED chips with a peak wavelength of 460-470nm. The blue LED chips are fixed with insulating glue. The violet LED chips are placed in the center of the functional area electroplating layer. After die bonding, the chips are baked in an oven at 150-160℃ for 2 hours ± 10 minutes to completely fix each LED chip on the functional area electroplating layer.

[0117] S200: Using a gold wire bonding machine, each LED chip is connected in series to the positive and negative electrodes on the electroplated layer of the functional area;

[0118] S300: Prepare 2700K fluorescent adhesive solution, pour the prepared 2700K fluorescent adhesive solution into the glue tank of the dispensing machine, after the glue and bubbles are removed, and dispense the adhesive according to the required color area. After dispensing, bake at 80℃ for 1h±10min, and then bake at 160℃ for 4h±10min.

[0119] The specially formulated 2700K fluorescent adhesive solution has the following composition by mass ratio: adhesive: yellow-green powder with an emission peak wavelength of 535-545nm: blue-violet powder with an emission peak wavelength of 410-430nm (specific to this invention). Co-doped silicon oxynitride phosphor): Red phosphor with emission peak wavelength of 655-665nm = 11:(6-8):(5-6):(0.8-1.0);

[0120] The yellow-green phosphor with an emission peak wavelength of 535-545nm is or Composition, half-width at half-maximum (WWHM) of 70-90 nm;

[0121] The red powder with an emission peak wavelength of 655-665nm is Composition, half-width of 80-120nm;

[0122] The blue-violet powder with an emission peak wavelength of 410-430nm (specifically for this invention) The composition of the co-doped silicon oxynitride phosphor is shown above, with a half-width of 20-40 nm and an absorption spectrum of 300-420 nm; and it is combined with... Figure 3 , Absorption spectrum of co-doped oxynitride phosphors Emission spectrum of co-doped oxynitride phosphor;

[0123] S400: After baking, cut or thresh using a cutting or unloading device. After cutting or threshing, bake at 160℃ for 30 minutes. After baking, spectrally disperse and tape according to the specified photochromic and electrical parameters. The chromaticity coordinates satisfy the condition of being within a third-order chromatic tolerance ellipse centered at (0.4578, 0.4101), with a major axis a = 0.00774, a minor axis length of 0.00411, and an inclination angle of 57.17°. Figure 4 As shown.

[0124] The multi-chip excitation phosphor LED light source of this invention, which completes the 400-430nm blue light component, has a spectrum at 2700K as shown below. Figure 5 As shown, the spectral pairs are as follows: Figure 6As shown in the comparison spectrum, it can be directly seen that the LED light source in the embodiment of the present invention has no obvious trough in the 400-430nm range.

[0125] The test data for the 2700K light source of this invention are shown in Table 7 below:

[0126]

[0127] Table 7

[0128] As can be seen from Table 7 above, the multi-chip excitation phosphor LED light source of the present invention, which completes the blue light component of 400-430nm, has a higher spectral similarity SSI (350-830nm) than the existing scheme, a higher (400-430nm)% content, and no obvious valley in 400-430nm, making it smoother.

[0129] B. The warm white light 4000K scheme of the present invention.

[0130] 1) Existing technical solutions (the most comprehensive full-spectrum solution).

[0131] 1.1.1 Chip Solution:

[0132] A conventional phosphor excitation scheme using LED chips with peak wavelengths of 405-415nm, 435-445nm, 450-460nm, and 460-470nm.

[0133] 1.1.2 Existing spectra are as follows Figure 7 As shown.

[0134] Combination Figure 7 It can be seen that there is a clear trough phenomenon at 03A, that is, there is an unfillable phenomenon in the 400-430nm range.

[0135] 1.1.3 The test data is shown in Table 8 below.

[0136]

[0137] Table 8

[0138] 2) The present invention provides a solution for a 4000K multi-chip excitation phosphor LED light source to supplement the 400-430nm blue light component:

[0139] The method for preparing the LED light source in this embodiment:

[0140] S100: N LED chips are placed on the functional area electroplating layer of the cup-shaped bracket and fixed with insulating glue or silver paste using a die bonder. The N LED chips include M violet LED chips with a peak wavelength of 405-415nm, P blue LED chips with a peak wavelength of 435-445nm, Q blue LED chips with a peak wavelength of 450-460nm, and S blue LED chips with a peak wavelength of 460-470nm. The blue LED chips are fixed with insulating glue. The violet LED chips are placed in the center of the functional area electroplating layer. After die bonding, the chips are baked in an oven at 150-160℃ for 2 hours ± 10 minutes to completely fix each LED chip on the functional area electroplating layer.

[0141] S200: Using a gold wire bonding machine, each LED chip is connected in series to the positive and negative electrodes on the electroplated layer of the functional area;

[0142] S300: Prepare a 4000K fluorescent adhesive solution. Pour the prepared 4000K fluorescent adhesive solution into the glue tank of the dispensing machine. After the glue and bubbles are removed, dispense the adhesive according to the required color area. After dispensing, bake at 80℃ for 1h±10min and then at 160℃ for 4h±10min.

[0143] The specially formulated 4000K fluorescent adhesive solution has the following composition by mass ratio: adhesive: yellow-green powder with an emission peak wavelength of 535-545nm: blue-violet powder with an emission peak wavelength of 410-430nm (specific to this invention). Co-doped oxynitride phosphor): Red phosphor with emission peak wavelength of 655-665nm = 11:(2-5):(5-6):(0.2-0.4);

[0144] The yellow-green phosphor with an emission peak wavelength of 535-545nm is or Composition, half-width at half-maximum (WWHM) of 70-90 nm;

[0145] The red powder with an emission peak wavelength of 655-665nm is Composition, half-width of 80-120nm;

[0146] The blue-violet powder with an emission peak wavelength of 410-430nm (specifically for this invention) The composition of the co-doped silicon oxynitride phosphor is shown above, with a half-width of 20-40 nm and an absorption spectrum of 300-420 nm; and it is combined with... Figure 3 , Absorption spectrum of co-doped oxynitride phosphors Emission spectrum of co-doped oxynitride phosphor;

[0147] S400: After baking, cut or thresh using a cutting or unloading device. After cutting or threshing, bake at 160℃ for 30 minutes. After baking, spectrally disperse and tape according to the specified photochromic and electrical parameters. The chromaticity coordinates satisfy the condition of a third-order chromatic tolerance ellipse centered at (0.38, 0.38), with a major axis a = 0.00939, a minor axis length of 0.00402, and an inclination angle of 54°. Figure 8 As shown.

[0148] The multi-chip excitation phosphor LED light source of this invention, which completes the 400-430nm blue light component, has a spectrum of 4000K as shown below. Figure 9 As shown, the spectral pairs are as follows: Figure 10 As shown in the comparison spectrum, it can be directly seen that the LED light source in the embodiment of the present invention has no obvious trough in the 400-430nm range.

[0149] The test data for the 4000K light source of this invention are shown in Table 9 below:

[0150]

[0151] Table 9

[0152] C. The warm white light 5700K scheme of the present invention:

[0153] 1) Existing technical solutions (the most comprehensive full-spectrum solution).

[0154] 1.1.1 Chip Solution:

[0155] A conventional phosphor excitation scheme using LED chips with peak wavelengths of 405-415nm, 435-445nm, 450-460nm, and 460-470nm.

[0156] 1.1.2 Existing spectra are as follows Figure 11 As shown.

[0157] Combination Figure 11 It can be seen that there is a clear trough phenomenon at 04A, that is, there is an unfillable phenomenon in the 400-430nm range.

[0158] 1.1.3 The test data is shown in Table 10 below.

[0159]

[0160] Table 10

[0161] 3) The present invention provides a solution for a 5700K multi-chip excitation phosphor LED light source to supplement the 400-430nm blue light component:

[0162] The method for preparing the LED light source in this embodiment:

[0163] S100: N LED chips are placed on the functional area electroplating layer of the cup-shaped bracket and fixed with insulating glue or silver paste using a die bonder. The N LED chips include M violet LED chips with a peak wavelength of 405-415nm, P blue LED chips with a peak wavelength of 435-445nm, Q blue LED chips with a peak wavelength of 450-460nm, and S blue LED chips with a peak wavelength of 460-470nm. The blue LED chips are fixed with insulating glue. The violet LED chips are placed in the center of the functional area electroplating layer. After die bonding, the chips are baked in an oven at 150-160℃ for 2 hours ± 10 minutes to completely fix each LED chip on the functional area electroplating layer.

[0164] S200: Using a gold wire bonding machine, each LED chip is connected in series to the positive and negative electrodes on the electroplated layer of the functional area;

[0165] S300: Prepare 5700K fluorescent adhesive solution. Pour the prepared 5700K fluorescent adhesive solution into the glue tank of the dispensing machine. After the glue and bubbles are removed, dispense the adhesive according to the required color area. After dispensing, bake at 80℃ for 1h±10min and then at 160℃ for 4h±10min.

[0166] The specially formulated 5700K fluorescent adhesive solution has the following composition by mass ratio: adhesive: yellow-green powder with an emission peak wavelength of 535-545nm: blue-violet powder with an emission peak wavelength of 410-430nm (specific to this invention). Co-doped oxynitride phosphor): Red phosphor with emission peak wavelength of 655-665nm = 11:(1.5-3.5):(2-3):(0.1-0.3);

[0167] The yellow-green phosphor with an emission peak wavelength of 535-545nm is or Composition, half-width at half-maximum (WWHM) of 70-90 nm;

[0168] The red powder with an emission peak wavelength of 655-665nm is Composition, half-width of 80-120nm;

[0169] The blue-violet powder with an emission peak wavelength of 410-430nm (specifically for this invention) The composition of the co-doped silicon oxynitride phosphor is shown above, with a half-width of 20-40 nm and an absorption spectrum of 300-420 nm. (And combined with...) Figure 3 , Absorption spectrum of co-doped oxynitride phosphors Emission spectrum of co-doped oxynitride phosphor;

[0170] S400: After baking, cut or thresh using a cutting or blanking device. After cutting or threshing, bake at 160℃ for 30 minutes. After baking, spectrally disperse and tape according to the specified photochromic and electrical parameters. The chromaticity coordinates satisfy the condition of a third-order chromatic tolerance ellipse centered at (0.3287, 0.3417), with a major axis a = 0.00744, a minor axis length of 0.00318, and an inclination angle of 60.37°. Figure 12 As shown.

[0171] The multi-chip excitation phosphor LED light source of this invention, which completes the 400-430nm blue light component, has a spectrum of 5700K as shown below. Figure 13 As shown, the spectral pairs are as follows: Figure 14 As shown in the comparison spectrum, it can be directly seen that the LED light source in the embodiment of the present invention has no obvious trough in the 400-430nm range.

[0172] The test data for the 5700K light source of this invention are shown in Table 11 below:

[0173]

[0174] Table 11

[0175] In this embodiment, the oxynitride phosphor is prepared by a multi-step sintering process, which includes at least a pre-sintering stage and a densification sintering stage. The temperature of the pre-sintering stage is 1450-1550℃, and the atmosphere is an inert gas. The temperature of the densification sintering stage is 1600-1700℃, and the atmosphere is a high-pressure inert gas with a pressure of 4-10 atm.

[0176] In this embodiment, the surface of the oxynitride phosphor is coated with a composite protective layer, and the composite protective layer is... The combination with a metal oxide, wherein the metal oxide is At least one of the following; the thickness of the composite protective layer is 2-8 nm, and the coating weight is 2.0%-6.0 wt%.

[0177] In this embodiment, the multi-chip excitation phosphor LED light source that completes the 400-430nm blue light component also includes adhesive and at least one auxiliary phosphor. The adhesive, the auxiliary phosphor, and the spectral completion unit together constitute a phosphor adhesive system. The auxiliary phosphor includes a yellow-green phosphor with an emission peak wavelength of 500-560nm and a red phosphor with an emission peak wavelength of 620-680nm. The mass ratio of each component in the phosphor adhesive system is adjusted according to the set target color temperature, wherein the mass ratio of the spectral completion unit is 5%-20%.

[0178] In this embodiment, the target color temperature is 2000K-7000K, the corresponding chromaticity coordinates fall within the preset 3rd order color tolerance ellipse in the CIE1931 chromaticity diagram, and the color rendering index Ra of the light source is ≥95, the spectral proportion of the 400-430nm band is ≥1.5%, and the SSI (350-830nm) is ≥90.

[0179] The multi-chip excitation phosphor LED light source that completes the 400-430nm blue light component in this embodiment of the invention excites the spectral completion unit to generate 400-430nm blue light through a first excitation sub-unit with a wavelength of 390-425nm, while filling the 420-440nm spectral gap through a second excitation sub-unit with a wavelength of 425-475nm, and completing the mid-to-long wavelength spectrum through the auxiliary phosphor, thereby achieving continuous full-spectrum coverage.

[0180] In summary, the core advantages of the multi-chip excitation phosphor LED light source that completes the 400-430nm blue light component provided by the embodiments of the present invention are as follows:

[0181] I. Technological Breakthrough: Breaking through long-standing technological barriers in the industry.

[0182] Breaking the excitation-emission matching paradox: The pioneering "multi-band chip collaborative excitation" architecture uses 390-425nm high-energy chips (such as 410nm±5nm) to meet the energy requirements for 400-430nm blue light emission, and pairs them with 425-475nm chips (such as 440nm±5nm, 455nm±5nm, etc.) to fill spectral gaps. This not only avoids the problem of insufficient energy of 450nm single chips, but also solves the problem of performance collapse when 400nm chips excite conventional phosphors through the stability design of specially made phosphors, completely breaking the industry deadlock of "performance failure when energy meets the standard".

[0183] Breaking through the bottleneck of material design: through " "Co-doped + lattice-controlled" modified oxynitride phosphors, with Using this as a substrate, the excitation peak is shifted to around 400nm, and the emission peak accurately covers the 400-430nm band. Moreover, the light decay is ≤3% after 1000 hours and the excitation efficiency is ≥91%, which overturns the industry prejudice that "there is no stable oxynitride phosphor suitable for 400nm chips" and fills the material gap for dedicated phosphors in this band.

[0184] II. Spectral performance: Achieve full-spectrum coverage with "natural light-like" performance.

[0185] Spectral continuity and integrity: Through the combination of multi-crystal energy gradient excitation and directional emission of specially made phosphors, there is no obvious trough in the 400-430nm band, the spectral fluctuation in the 400-465nm band is ≤5%, and the SSI (350-830nm) is ≥93. Compared with the existing scheme (the proportion of 400-430nm is only 1.95%-6.62%), the proportion of this band in this invention is increased to 2.13%-8.17%, and the homology of the spectrum with natural light is significantly improved.

[0186] Superior optical, color, and electrical parameters: Achieves a color rendering index Ra≥98.2 (up to 99.4), R9≥94.5, and CQS≥97.4 across the entire color temperature range (2700K, 4000K, 5700K), with chromaticity coordinates precisely falling within a 3rd-order color tolerance ellipse. This allows for accurate reproduction of the true colors of objects, meeting the needs of scenarios with extremely high color reproduction requirements, such as cultural relic preservation and medical diagnosis.

[0187] III. Stability and Reliability: Adaptable to long-term use requirements in high-end scenarios.

[0188] The stability of the phosphor is significantly improved: a two-step sintering process (1500℃ pre-sintering + 1650℃ high-pressure densification sintering) reduces lattice voids, combined with… The surface modification of the composite layer (3:1 mass ratio) improves the phosphor's resistance to hydrolysis, resulting in an intensity retention rate of ≥98% after immersion for 24 hours and a light decay of only 2.6% after 1000 hours of 400nm excitation, which is far superior to the 52.8% light decay rate of conventional SiAlON phosphors. Furthermore, the stability retention rate reaches 95.2% after 500 hours in a 60℃ / 90%RH environment.

[0189] Stable long-term performance of the light source: The multi-chip ring nested arrangement (0.15-0.35mm spacing) improves excitation uniformity. Combined with the segmented baking and curing fluorescent adhesive system, it avoids problems such as spectral shift and brightness decay during long-term use of the light source, ensuring continuous reliability in scenarios that require long-term operation, such as museums and medical equipment.

[0190] IV. Scenario Adaptability: Covers the core needs of multiple high-end fields.

[0191] Improved physiological adaptability: It supplements the 400-430nm short-wavelength blue light (a carrier of physiological signals in natural light), which can simulate the regulatory effect of natural light on the human melatonin rhythm, avoid the physiological rhythm disorder caused by the lack of this wavelength in existing light sources, and adapt to scenarios related to human health such as high-end indoor lighting.

[0192] Performance optimization for specific scenarios: In cultural relic protection lighting, color reproduction deviation has been reduced from over 15% in existing solutions to a negligible range, avoiding spectral loss that accelerates the aging of cultural relics; In plant factory seedling cultivation scenarios, supplementation with 400-430nm blue light significantly reduces the decline in plant PSII activity from over 30%, improving seedling survival rate; In medical diagnostic lighting, high color rendering index and continuous spectrum can accurately present lesion details, assisting doctors in diagnosis.

[0193] V. Industrialization value: It has the potential for large-scale application.

[0194] Strong process compatibility: The processes of phosphor preparation (two-step sintering, sol-gel coating) and light source packaging (die bonding, wire bonding, dispensing) are all based on existing mature equipment in the LED industry, without the need for large-scale production line modifications, thus lowering the threshold for industrialization.

[0195] High cost controllability: Specially formulated oxynitride phosphors are optimized through doping ratio. To avoid concentration quenching and material waste, the power ratio of multiple wafers is reasonably allocated (e.g., 115%-20% for 410nm wafers) to balance performance and energy consumption, making it more cost-competitive than similar high-end full-spectrum solutions.

[0196] The above description is merely a preferred embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of the present invention should be included within the protection scope of the present invention.

Claims

1. A polychromatic sheet excitation phosphor LED light source that complements the 400-430 nm blue light component, characterized in that, The application relates to a full-spectrum light source, which comprises the following parts: A synergistic excitation unit for providing gradient energy photons to adapt to different spectral requirements, at least comprising a first excitation subunit and a second excitation subunit, the first excitation subunit has a peak wavelength in the range of 390-425 nm and is used for providing excitation high-energy photons, and the second excitation subunit has a peak wavelength in the range of 425-475 nm and is used for bridging the spectral gap; A spectral complementation unit which can be excited by the first excitation subunit and directionally emit 400-430 nm blue light, and the spectral complementation unit has a light decay of less than or equal to 5% in 1000 hours under 400 nm wavelength excitation and an excitation efficiency of more than or equal to 85%.

2. The phosphor-converted LED light source of claims 1, wherein the phosphor-converted LED light source is configured to emit light having a dominant wavelength in the range of 450 nm to 470 nm. The synergistic excitation unit comprises 3-5 wafers with different peak wavelengths, and the spacing between the wafers is 0.1-0.5 mm; wherein the power proportion of the wafer in the range of 395-420 nm is 10%-30%, and the total power proportion of the wafer in the range of 430-470 nm is 40%-70%.

3. The phosphor-converted LED light source of claims 1 to 2, wherein the phosphor-converted LED light source is configured to emit light having a CCT of 2700 K to 6500 K, and a CRI Ra of at least 90, and a CRI R9 of at least 50. The spectrum complementing unit is a nitride oxide fluorescent powder, the nitride oxide fluorescent powder is doped with a base and active ions and charge compensation ions, wherein z=0.5-1.5; the active ions are at least one of , and the doping amount is 0.3%-1.0mol%; the charge compensation ions are at least one of , and the molar ratio of the active ions to the charge compensation ions is 1:1.5-1:

4.

4. The phosphor-converted LED light source of claims 3, wherein the phosphor-converted LED light source is configured to emit light having a dominant wavelength in the range of 450 nm to 470 nm. The nitride oxide fluorescent powder is prepared through a multi-step sintering process, and the multi-step sintering process at least comprises a pre-sintering stage and a densification sintering stage; the temperature of the pre-sintering stage is 1450-1550 DEG C, and the atmosphere is inert gas; the temperature of the densification sintering stage is 1600-1700 DEG C, the atmosphere is high-pressure inert gas, and the pressure is 4-10 atm.

5. The phosphor-converted LED light source of claims 3, wherein the phosphor-converted LED light source is configured to emit light having a dominant wavelength in the range of 450 nm to 460 nm. The nitride oxide fluorescent powder is coated with a composite protective layer, the composite protective layer is a combination with a metal oxide, the metal oxide is at least one of the following: a metal oxide, a metal halide, a metal chalcogenide, a metal pnictide, a metal carbide, a metal nitride, a metal phosphide, a metal arsenide, a metal antimonide, a metal bismuthide, a metal silicide, a metal boride, a metal aluminide, a metal galliumide, a metal indiumide, a metal germanide, a metal stannide, a metal leadide, a metal oxide semiconductor, a metal halide semiconductor, a metal chalcogenide semiconductor, a metal pnictide semiconductor, a metal carbide semiconductor, a metal nitride semiconductor, 6. The phosphor-converted LED light source of claims 1 to 5, wherein the phosphor-converted LED light source is a polycrystalline chip excitation phosphor LED light source that emits light in the 400-430 nm blue light component. The application further comprises glue and at least one auxiliary fluorescent powder, the glue, the auxiliary fluorescent powder and the spectral complementation unit jointly form a fluorescent glue system; the auxiliary fluorescent powder comprises yellow-green fluorescent powder with an emission peak wavelength of 500-560 nm and red fluorescent powder with an emission peak wavelength of 620-680 nm; the mass ratio of each component in the fluorescent glue system is adjusted according to a set target color temperature, and the mass proportion of the spectral complementation unit is 5%-20%.

7. The phosphor-converted LED light source of claims 6, wherein the phosphor-converted LED light source is configured to emit light having a dominant wavelength in the range of 450 nm to 460 nm. The target color temperature is 2000 K-7000 K, the corresponding chromaticity coordinates fall in a preset 3rd-order color tolerance ellipse in a CIE1931 chromaticity diagram, the color rendering index Ra of the light source is greater than or equal to 95, the spectral proportion in the 400-430 nm wave band is greater than or equal to 1.5%, and SSI (350-830 nm) is greater than or equal to 90.

8. The phosphor-converted LED light source of claims 6, wherein the phosphor-converted LED light source is configured to emit light having a dominant wavelength in the range of 450 nm to 460 nm. The spectral complementation unit is excited by the first excitation subunit with a wavelength of 390-425 nm to generate 400-430 nm blue light, the spectral gap in the range of 420-440 nm is filled by the second excitation subunit with a wavelength of 425-475 nm, and the medium and long wave band spectrum is complemented by the auxiliary fluorescent powder, so that full-spectrum continuous coverage is realized.

9. A method for preparing a polycrystalline sheet excitation fluorescent powder LED light source complementing 400-430 nm blue light components according to any one of claims 1-8, characterized in that, The application further comprises the following steps: S100: fixing each wafer of the synergistic excitation unit in a functional area of a support, arranging and solidifying according to a preset position; S200: connecting each wafer and the electrode of the support through a bonding process; S300: preparing a fluorescent glue system corresponding to the target color temperature, and performing point gluing, segmented baking and solidification; S400: cutting, degermination, spectral splitting and ribbon processing on the solidified light source.

10. Use of a phosphor-converted LED light source according to any of claims 1 to 8 for supplementing the blue light component in the range of 400 to 430 nm, characterized in that Applications in lighting scenarios requiring spectral continuity ≥ 90% including at least one of: heritage preservation lighting, medical diagnostic lighting, plant cultivation lighting, high-end display backlighting, high-end indoor lighting.

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