High-density semiconductor electric refrigeration device and energy recycling method thereof

Abstract

The invention relates to the technical field of thermoelectric refrigeration, in particular to a high-density semiconductor electric refrigeration device and an energy recycling method thereof.The high-density semiconductor electric refrigeration device comprises at least one external packaging module, at least one semiconductor refrigeration module, at least one thermoelectric power generation module and at least one thermoelectric power generation module, the semiconductor refrigeration module comprises an external packaging module, a circuit adaptation module arranged in the external packaging module, an energy storage unit electrically connected with the circuit adaptation module, a contact module arranged on the circuit adaptation module and not using a contact insulation protection module, and the energy storage unit and the semiconductor refrigeration module form an electrical loop. And the stored electric energy can be at least partially supplied to the semiconductor refrigeration module for use, so that a partial energy recycling system is formed.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of thermoelectric refrigeration, and in particular to a high-density semiconductor electric refrigeration device and an energy recycling method thereof. BACKGROUND

[0002] The semiconductor electric refrigeration device has the advantages of no mechanical rotating parts, no noise, no corrosion and pollution of refrigerant, easy maintenance, long service life, variable refrigeration capacity, great design flexibility, arbitrary shape, miniaturization and temperature control.

[0003] However, the conventional semiconductor refrigeration device always generates an equal amount of unwanted "waste heat" or "waste cold" at the opposite end in exchange for the utility generated at the effective working end (cold end in refrigeration mode). For example, in refrigeration mode, the heat generated at the hot end must be promptly and effectively removed in order to maintain a continuous low temperature at the cold end. Currently, the industry generally uses active heat dissipation methods such as air cooling (natural convection or forced ventilation) or water cooling to handle this heat. Although these traditional heat management methods solve the heat dissipation problem to some extent, they require additional electrical energy to drive fans, water pumps and other equipment, which not only increases the overall energy consumption of the system but also wastes energy. SUMMARY

[0004] Therefore, the present application aims to provide a high-density semiconductor electric refrigeration device and an energy recycling method thereof to solve the problems mentioned in the background.

[0005] To achieve the above-mentioned purpose, the present application provides a high-density semiconductor electric refrigeration device, comprising: at least one external packaging module, which internally has at least one semiconductor refrigeration module that generates a refrigeration effect on one side and a heating effect on the opposite side when powered on; at least one thermoelectric generation module, which is arranged inside the external packaging module and has a hot end that is thermally coupled to the heating side of the semiconductor refrigeration module for generating electricity using the temperature difference between the two; a circuit adaptation module, which is arranged inside the external packaging module and is electrically connected to the thermoelectric generation module for managing the electrical energy generated by the thermoelectric generation module; an energy storage unit, which is electrically connected to the circuit adaptation module for storing the electrical energy generated by the thermoelectric generation module; A contact module is arranged on the circuit adaptation module, and the positive and negative poles of the thermoelectric generation module and the positive and negative poles of the semiconductor refrigeration module are packaged in the form of external contacts in the internal part of the external packaging module through the contact module. A non-use contact insulation protection module is used to block the non-use contact of the thermoelectric generation module.

[0006] The energy storage unit and the semiconductor refrigeration module form an electrical loop, which can at least partially supply the stored electrical energy to the semiconductor refrigeration module, thereby forming a partial energy recycling system.

[0007] Preferably, the semiconductor refrigeration module and the thermoelectric generation module are fixed by high-temperature resistant conductive glue.

[0008] Preferably, the shape of the external packaging module is one of a regular triangular column, a square column and a regular hexagonal column, and the edge length and height of all regular triangular columns, square columns and regular hexagonal columns are the same to facilitate splicing.

[0009] Preferably, the circuit adaptation module includes a current sharing control circuit for balancing the output current of each thermoelectric generation module when multiple modules are spliced.

[0010] Preferably, the thermoelectric generation module is a multi-stage structure, including two or three thermoelectric generation modules connected in series or parallel, and the output voltage of the thermoelectric generation module is customized to one of 5V, 9V, 12V, 24V, 36V and 48V.

[0011] Preferably, the energy storage unit includes a refrigeration power module and a thermoelectric generation storage module, the refrigeration power module is electrically connected to the semiconductor refrigeration module, the thermoelectric generation storage module includes a battery and a charging adapter, the battery is electrically connected to the thermoelectric generation module, the charging adapter is respectively electrically connected to the battery and the thermoelectric generation module, and the input voltage of the refrigeration power module is also customized to one of 5V, 9V, 12V, 24V, 36V and 48V.

[0012] Preferably, the contact module interface includes one or more of a spring contact and a magnetic contact.

[0013] Preferably, it further includes a heat dissipation module, which is thermally coupled to the cold end of the thermoelectric generation module.

[0014] An energy recycling method for a high-density semiconductor electric refrigeration device, the method comprising the following steps: Power is supplied to at least one semiconductor refrigeration module to cool one side and heat the opposite side; The thermoelectric power generation module generates electricity by utilizing the temperature difference established between the heating side of the semiconductor cooling module and the hot end of a thermoelectric power generation module. The electrical energy generated by the thermoelectric power generation module is managed and stored in an energy storage unit; The electrical energy stored in the energy storage unit is fed back at least partially to the semiconductor cooling module to assist or maintain its cooling function. Specifically, through the thermoelectric power generation step, the power management and storage step, and the energy feedback step, the heat energy generated during the semiconductor cooling process is partially recovered and converted into electrical energy for recycling.

[0015] Preferably, in the power management and storage step, current sharing control technology is used to manage the current output by multiple thermoelectric power generation modules connected in parallel.

[0016] The beneficial effects of this invention are as follows: Utilizing the principle of thermoelectric power generation, the higher temperature generated at the other end of this high-density semiconductor electro-cooling device is converted into electrical energy and stored in a battery for continued use by the high-density semiconductor electro-cooling device. This achieves the function of mutual energy support and recycling between thermoelectric power generation and semiconductor cooling / heating. It features a uniform shape, uniform input voltage customization, uniform power generation voltage, uniform electrical and physical performance interfaces, allowing for direct splicing of this high-density semiconductor electro-cooling device without the need for complex circuit and wiring designs, thus facilitating application and installation. Attached Figure Description

[0017] To more clearly illustrate the technical solutions in this invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only for this invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0018] Figure 1 This is a schematic diagram of the high-density semiconductor electrocooling device according to an embodiment of the present invention; Figure 2 This is a schematic diagram illustrating the Peltier effect principle in an embodiment of the present invention; Figure 3 This is a schematic diagram of power generation by a single-stage high-density semiconductor electro-cooling device according to an embodiment of the present invention; Figure 4 This is a schematic diagram of the structure of a high-density semiconductor electrocooling device with a regular hexagonal prism according to an embodiment of the present invention; Figure 5 This is a schematic diagram of the structure of a high-density semiconductor electrocooling device with a square column shape according to an embodiment of the present invention; Figure 6 This is a schematic diagram of the structure of a high-density semiconductor electrocooling device with an equilateral triangular prism according to an embodiment of the present invention; Figure 7 This is a schematic diagram of the splicing of a high-density semiconductor electrocooling device consisting of multiple regular hexagonal prisms according to an embodiment of the present invention; Figure 8 This is a schematic diagram of the splicing of multiple square prisms in a high-density semiconductor electrocooling device according to an embodiment of the present invention; Figure 9 This is a schematic diagram of the splicing of multiple equilateral triangular prisms in a high-density semiconductor electrocooling device according to an embodiment of the present invention; Figure 10 This is a schematic diagram of the splicing of a high-density semiconductor electrocooling device consisting of a square prism and an equilateral triangular prism according to an embodiment of the present invention; Figure 11 This is a schematic diagram of a parallel power generation device for a secondary high-density semiconductor electro-cooling device according to an embodiment of the present invention; Figure 12 This is a schematic diagram of a series-connected high-density semiconductor electrocooling device according to an embodiment of the present invention; Figure 13 This is a schematic diagram of the electrical connection packaging of a series semiconductor refrigeration module and a series thermoelectric power generation module according to an embodiment of the present invention; Figure 14 Two examples of embodiments of the present invention are shown below. Figure 13 A schematic diagram of the assembly of semiconductor cooling devices; Figure 15 This is a schematic diagram of the electrical connection packaging of the parallel connection of the semiconductor cooling module and the parallel connection of the thermoelectric power generation module in an embodiment of the present invention; Figure 16 Two examples of embodiments of the present invention are shown below. Figure 15 A schematic diagram of the assembly of semiconductor cooling devices; Figure 17 This is a schematic diagram of the electrical connection packaging of the series-connected semiconductor cooling module and the parallel-connected thermoelectric power generation module in an embodiment of the present invention; Figure 18 Two examples of embodiments of the present invention are shown below. Figure 17 A schematic diagram of the assembly of semiconductor cooling devices; Figure 19 This is a schematic diagram of the electrical connection packaging of the series-connected semiconductor cooling module and the parallel-connected thermoelectric power generation module in an embodiment of the present invention; Figure 20 Two examples of embodiments of the present invention are shown below. Figure 19 A schematic diagram of the assembly of semiconductor cooling devices; Figure 21 This is a schematic diagram of the spring-loaded contact structure of the contact module according to an embodiment of the present invention; Figure 22This is a schematic diagram of the structure of the magnetic contact of the contact module in an embodiment of the present invention.

[0019] Figure label: 1. External packaging module; 2. Semiconductor cooling module; 3. Thermoelectric power generation module; 4. Circuit adapter module; 5. Energy storage unit; 6. Contact module; 7. Non-use contact insulation protection module; 8. High temperature resistant thermally conductive adhesive; 9. Cooling power-on module; 10. Thermoelectric power generation and energy storage module; 11. Heat dissipation module. Detailed Implementation

[0020] To make the objectives, technical solutions, and advantages of this invention clearer, the invention will be further described in detail below with reference to specific embodiments.

[0021] It should be noted that, unless otherwise defined, the technical or scientific terms used in this invention should have the ordinary meaning understood by one of ordinary skill in the art to which this invention pertains. The terms "first," "second," and similar terms used in this invention do not indicate any order, quantity, or importance, but are merely used to distinguish different components. Terms such as "comprising" or "including" mean that the element or object preceding the word encompasses the elements or objects listed following the word and their equivalents, without excluding other elements or objects. Terms such as "connected" or "linked" are not limited to physical or mechanical connections, but can include electrical connections, whether direct or indirect. Terms such as "upper," "lower," "left," and "right" are used only to indicate relative positional relationships; when the absolute position of the described object changes, the relative positional relationship may also change accordingly.

[0022] like Figures 1 to 22 As shown, a high-density semiconductor electrocooling device includes: At least one external packaging module 1, which has at least one semiconductor cooling module 2 inside, which generates a cooling effect on one side and a heating effect on the opposite side when energized; At least one thermoelectric power generation module 3 is disposed inside the external encapsulation module 1, and the hot end of the thermoelectric power generation module 3 is thermally coupled to the heating side of the semiconductor refrigeration module 2 for generating electricity using the temperature difference between the two. A circuit adapter module 4 is disposed inside the external encapsulation module 1. The circuit adapter module 4 is electrically connected to the thermoelectric power generation module 3 and is used to manage the electrical energy generated by the thermoelectric power generation module 3. An energy storage unit 5 is electrically connected to the circuit adapter module 4 and is used to store the electrical energy generated by the thermoelectric power generation module 3. The contact module 6 is disposed on the circuit adapter module 4, and the positive and negative terminals of the thermoelectric power generation module 3 and the positive and negative terminals of the semiconductor cooling module 2 are encapsulated on the external packaging module 1 in the form of external contacts through the contact module 6. Non-use contact insulation protection module 7 is used to block the non-use contacts of the thermoelectric generator module 3.

[0023] The energy storage unit 5 and the semiconductor cooling module 2 form an electrical circuit, which can supply at least part of the stored electrical energy to the semiconductor cooling module 2, thereby forming a partial energy recycling system.

[0024] like Figure 1 As shown, the semiconductor refrigeration module 2 and the thermoelectric power generation module 3 complement and enhance each other to form the core components of this high-density semiconductor electro-refrigeration device. The circuit adapter module 4 is mainly used to control the current generated by the thermoelectric power generation in this high-density semiconductor electro-refrigeration device. Each contact inside this high-density semiconductor electro-refrigeration device is connected to the positive and negative terminals of the thermoelectric power generation module 3 and the semiconductor refrigeration module 2, respectively. Externally, this high-density semiconductor electro-refrigeration device is connected to other high-density semiconductor electro-refrigeration devices via contacts, facilitating the expansion of electrical performance and the installation, deployment, and application. The external packaging module 1 only encapsulates the sides of the thermoelectric power generation module 3 and the semiconductor refrigeration module 2. The packaging material uses vacuum insulation materials, such as core material (e.g., glass fiber) + vacuum sealing film, or insulation film (PET substrate + aluminum / titanium nitride coating), etc. The non-use contact insulation protection module 7 refers to the fact that when one or more high-density semiconductor electro-cooling devices are spliced ​​together to form a high-density semiconductor electro-cooling device assembly, in addition to installing the cooling power-conducting module 9 and the thermoelectric power generation and energy storage module 10 on the contacts of the high-density semiconductor electro-cooling device assembly, as well as other electrical installations that require the use of contact modules 6, all other unused contacts need to be covered with the non-use contact insulation protection module 7 to prevent leakage, unnecessary energy loss, and circuit accidents. The non-use contact insulation protection module 7 is actually an insulating nut that can be fitted onto each contact module 6, and its material can be insulating materials such as rubber and plastic.

[0025] As an optional embodiment, the semiconductor cooling module 2 and the thermoelectric power generation module 3 are bonded and fixed together by high-temperature resistant thermally conductive adhesive 8.

[0026] like Figure 1 As shown, the high-temperature resistant thermally conductive adhesive 8 is used to bond the thermoelectric generator module 3 and the semiconductor refrigeration module 2 together, fixing the thermoelectric generator module 3 and the semiconductor refrigeration module 2 together, and also has the characteristics of high-temperature thermal conductivity.

[0027] As an optional embodiment, the shape of the external encapsulation module 1 is one of an equilateral triangular prism, a square prism, and a regular hexagonal prism. All equilateral triangular prisms, square prisms, and regular hexagonal prisms have the same edge length and height to facilitate splicing.

[0028] like Figure 4 , Figure 5 , Figure 6 As shown, the implementation of the unified switch is actually to use an external encapsulation module 1 to encapsulate the semiconductor cooling module 2, thermoelectric power generation module 3, high-temperature resistant thermally conductive adhesive 8, circuit adapter module 4, and contact module 6, which constitute the high-density semiconductor electro-cooling device, into shapes such as regular hexagonal prisms, square prisms, and equilateral triangular prisms. The specific size of the encapsulation should be determined according to the specific needs of production and daily life. For example, in large projects, the size should be larger.

[0029] The specific encapsulation process is as follows: (1) Determine the shape and size of the package, such as a 5cm*5cm square column.

[0030] (2) Prepare packaging molds of the required shape and size. The positions of the semiconductor cooling module 2 and thermoelectric power generation module 3, the circuit adapter module 4 and the contact module 6 are clearly and accurately marked in each mold.

[0031] (3) Prepare all the materials that need to be packaged, including: semiconductor cooling module 2, thermoelectric power generation module 3, high temperature heat-conducting adhesive 8, circuit adapter module 4, and contact module 6.

[0032] (4) Bond the semiconductor cooling module 2 and the thermoelectric power generation module 3 together with high-temperature thermally conductive adhesive 8. The bonding method should be such that the hot end of the semiconductor cooling module 2 and the hot end of the thermoelectric power generation module 3 are attached together.

[0033] (5) Install the circuit adapter module 4 on the wiring terminal of the thermoelectric generator module 3. The positive and negative terminals of the circuit adapter module 4 need to match the positive and negative terminals of the thermoelectric generator module 3.

[0034] (6) Connect the contact module 6 to the main body that has just been connected by circuit connection, including the semiconductor cooling module 2, the thermoelectric power generation module 3, the high-temperature thermal conductive adhesive 8, and the circuit adapter module 4.

[0035] (7) Place the device body completed in step (6) into the encapsulation mold. The specific placement should correspond to the placement position of each component module marked in the mold.

[0036] (8) Pour the prepared high-temperature resistant vacuum insulation material (such as core material (such as glass fiber) + vacuum sealing film insulation film PET substrate + aluminized, etc.) adhesive into the encapsulation mold. It should be noted that the high-temperature resistant vacuum insulation material adhesive only needs to cover the side of the module body composed of semiconductor refrigeration module 2 and thermoelectric power generation module 3. Circuit adapter module 4 and contact module 6 are also installed on the side of semiconductor refrigeration module 2 and thermoelectric power generation module 3.

[0037] The high-temperature resistant vacuum insulation material adhesive must not cover the heating and cooling surfaces of the semiconductor refrigeration module 2 and the thermoelectric power generation module 3. Please pay close attention to this.

[0038] like Figure 7 , Figure 8 and Figure 9 As shown, this high-density semiconductor electrocooling device is made in a uniform shape, which facilitates its application, installation and disassembly. When installing and using this high-density semiconductor electrocooling device, no additional wiring is required. Simply splice together high-density semiconductor electrocooling devices of the same shape and voltage (including input voltage and thermoelectric generation voltage).

[0039] This high-density semiconductor electro-refrigeration device, shaped like an equilateral triangular prism, is suitable for installations requiring semiconductor refrigeration in irregularly shaped applications, such as irregularly shaped cold storage units.

[0040] The square-shaped high-density semiconductor electrocooling device can solve most of the installation requirements for planar semiconductor cooling.

[0041] This high-density semiconductor electrocooling device with a regular hexagonal prism shape is suitable for installation requirements of semiconductor cooling in curved shapes, such as blast furnaces in thermal power plants and oil refineries.

[0042] like Figure 10 As shown, in addition to the ability to interlock devices of the same shape, to facilitate the interlocking of various shapes of semiconductor cooling devices, all equilateral triangular prisms, square prisms, and regular hexagonal prisms have equal edge lengths and heights. This facilitates the interlocking of regular hexagonal prisms with regular hexagonal prisms, square prisms with regular hexagonal prisms, equilateral triangular prisms with equilateral triangular prisms, and equilateral triangular prisms, square prisms, and regular hexagonal prisms. For square prism devices, regular hexagonal prism devices, and triangular prism devices of this high-density semiconductor cooling device with the same side length and the same voltage (including input voltage and thermoelectric voltage), they can also be interlocked according to actual needs. The interlocking method can be any combination of the various device types.

[0043] As an optional embodiment, the circuit adapter module 4 includes a current sharing control circuit for balancing the output current of each thermoelectric power generation module 3 when multiple modules are spliced ​​together.

[0044] As an optional embodiment, the thermoelectric power generation module 3 is a single-stage or multi-stage structure. The multi-stage structure includes two or three thermoelectric power generation modules 3 connected in series or parallel, and the output voltage of the thermoelectric power generation module 3 is customized to one of 5V, 9V, 12V, 24V, 36V and 48V.

[0045] like Figure 3 , Figure 11 and Figure 12 As shown, to make the heat generated at the hot end of the thermoelectric cooling system more efficient for thermoelectric power generation, a single-stage or multi-stage thermoelectric power generation module 3 can be used. Multi-stage thermoelectric power generation modules 3 include two-stage and three-stage modules. Whether a single-stage, two-stage, three-stage, or even higher-level thermoelectric power generation module 3 is used depends on the specific cooling scenario requirements. For example, if the temperature difference at the cold end of the thermoelectric cooling system is not large (e.g., only 50 degrees Celsius) and the cooling duration is not particularly long (e.g., only about 3 minutes), then a single-stage thermoelectric power generation module 3 is sufficient. Conversely, if a large temperature difference at the cold end of the thermoelectric cooling system is required, and the cooling duration is also required to be long, then a two-stage, three-stage, or even higher-level single-stage thermoelectric power generation module 3 can be considered.

[0046] The unified input voltage of this high-density semiconductor electrocooling device is achieved by customizing the input voltage of the thermoelectric power generation module to commonly used DC input voltages such as 5V / 9V / 12V / 24V / 36V / 48V, which facilitates use.

[0047] This high-density semiconductor electrocooling device has two unified electrical performance interface methods: series and parallel. The specific choice between series and parallel interface design depends on the user's needs and application scenario.

[0048] When the interface of an electrical circuit is designed to be in series, then multiple high-density semiconductor electrocooling devices connected together are in series.

[0049] When the interface of an electrical circuit is designed to be in parallel, then multiple high-density semiconductor electrocooling devices connected together will be in parallel.

[0050] For example, the input voltage of each high-density semiconductor electrocooling device can be designed to be 5V. The specific implementation method is as follows: Generally speaking, the open-circuit voltage of a PN junction for semiconductor cooling or semiconductor power generation is 0.1V-0.2V. The specific open-circuit voltage of a PN junction for semiconductor cooling or semiconductor power generation is affected by the material (such as bismuth telluride, silicon germanium), the temperature difference, and the junction area.

[0051] If we choose a semiconductor-cooled PN junction with an open-circuit voltage of 0.1V, then we would need 50 semiconductor-cooled PN junctions connected in series, which would have an open-circuit voltage of 5V / 0.1V.

[0052] Generally speaking, the short-circuit current of a PN junction in semiconductor cooling or semiconductor power generation is tens to hundreds of mA (the specific current is affected by the material (such as bismuth telluride, silicon germanium), temperature difference, and junction area). Suppose we choose a semiconductor cooling PN junction with a short-circuit current of 50 mA, but in the actual cooling process, we want to use a cooling current of 100 mA. Then we can divide the 100 semiconductor cooling PN junctions into two equal parts, with 50 PN junctions in each part. First, we connect each group of 50 PN junctions in series to form two groups of 50 PN junctions in series. Then, we connect these two groups of 50 PN junctions in series in parallel to obtain the 100 mA cooling current.

[0053] Similarly, assuming we need a 9V cooling input voltage and a 150mA cooling input current, and assuming we choose a semiconductor cooling PN junction with an open-circuit voltage of 0.1V and a short-circuit current of 50mA, then we need 90 semiconductor cooling PN junctions connected in series (9V / 0.1V). We need 3 groups of 90 semiconductor cooling PN junctions connected in series (150mA / 50mA), and then connect these 3 groups in parallel.

[0054] This high-density semiconductor electrocooling device is manufactured with a uniform input voltage, which facilitates application and installation. During installation, it can be directly spliced ​​with the same side length and the same voltage (including input voltage and thermoelectric voltage), eliminating the need for complex circuit design and wiring design, thus achieving a unified voltage interface.

[0055] This high-density semiconductor electrocooling device is manufactured with a uniform input voltage, and only needs to be connected in series or parallel according to the required rated input voltage. It eliminates the need for complex circuit design and wiring design, making it convenient for application and installation.

[0056] The implementation of a unified power generation voltage has two levels of significance: (1) The thermoelectric power generation voltage and current parameters of the same batch of high-density semiconductor electro-cooling devices are consistent, ensuring the matching of electrical performance parameters after multiple high-density semiconductor electro-cooling devices are spliced ​​together. For example, ensure that the materials (such as bismuth telluride, silicon germanium), temperature difference and junction area of ​​all thermoelectric power generation modules 3 in the high-density semiconductor electro-cooling devices are consistent.

[0057] (2) The high-density semiconductor electro-cooling device is configured with a circuit adapter module 4, which is mainly used to control the current of thermoelectric power generation in this high-density semiconductor electro-cooling device. This is because this high-density semiconductor electro-cooling device is continuously spliced ​​together during use. During the splicing process, the electrical circuits of this high-density semiconductor electro-cooling device are connected in parallel or series. When multiple thermoelectric power generation modules 3 are used in parallel, the current sharing method can ensure that the output current of each module is evenly distributed, avoiding overload of individual modules due to excessive current, thereby improving the reliability and stability of the system. When multiple thermoelectric power generation modules 3 are used in series, passive battery balancing and active current balancing methods can be used for current sharing.

[0058] The unified electrical performance interface method includes both series and parallel connections. Because this invention employs a technique involving the interaction between the semiconductor refrigeration module 2 and the thermoelectric power generation module 3, this high-density semiconductor electro-refrigeration device has both series and parallel connection methods for the semiconductor refrigeration module 2, as well as series and parallel electrical connection methods for the thermoelectric power generation module 3.

[0059] When the external interface of the semiconductor cooling module 2 is designed in series, the power supply of the semiconductor cooling module 2 after multiple high-density semiconductor cooling devices are spliced ​​together is in series.

[0060] When the external interface of the semiconductor cooling module 2 is designed in parallel, the power supply of the semiconductor cooling module 2 is in parallel after multiple high-density semiconductor cooling devices are spliced ​​together.

[0061] Similarly, when the external interface of the thermoelectric power generation module 3 is designed in series, the connection of the thermoelectric power generation module 3 after multiple high-density semiconductor electro-cooling devices are spliced ​​together is in series.

[0062] When the external interface of the thermoelectric power generation module 3 is designed to be connected in parallel, the power supply of the thermoelectric power generation module 3 is in parallel when multiple high-density semiconductor electro-cooling devices are spliced ​​together.

[0063] The specific permutations and combinations are as follows: Semiconductor cooling module 2 is connected in series, and thermoelectric power generation module 3 is connected in series; Semiconductor cooling module 2 is connected in parallel, and thermoelectric power generation module 3 is connected in parallel; Semiconductor cooling module 2 is connected in series, and thermoelectric power generation module 3 is connected in parallel; Semiconductor cooling module 2 is connected in parallel, and thermoelectric power generation module 3 is connected in series; Whether the interface of a specific electrical circuit needs to be designed as parallel or series depends on the requirements of the user and the actual usage scenario.

[0064] We use an external packaging module 1 to encapsulate the semiconductor cooling module 2, thermoelectric power generation module 3, high-temperature resistant thermally conductive adhesive 8, circuit adapter module 4, and contact module 6, which together form this high-density semiconductor electrocooling device, into shapes such as regular hexagonal prisms, square prisms, and equilateral triangular prisms. Correspondingly, each set of contacts in this high-density semiconductor electrocooling device includes: Cooling input voltage positive (+) terminal; The negative (-) terminal of the cooling input voltage; Thermoelectric generator outputs voltage at the positive (+) terminal; Thermoelectric generator outputs voltage at the positive (-) terminal; For the same high-density semiconductor electrocooling device, the corresponding number of contact modules will be 6, 4, and 3. The following is their correspondence.

[0065]

[0066] Correspondingly, the corresponding electrical connection point of each group of contacts is connected. For example, a packaged high-density semiconductor electrocooling device has 6 groups of contact modules 6. Each group of contact modules 6 has electrical connection points: the positive (+) terminal of the cooling input voltage, the negative (-) terminal of the cooling input voltage, the positive (+) terminal of the thermoelectric power generation output voltage, and the positive (-) terminal of the thermoelectric power generation output voltage.

[0067] Correspondingly, a packaged high-density semiconductor electrocooling device has 6 sets of contact modules 6. The same electrical connection points of each set of contact modules 6 are connected. For example, the positive (+) terminals of the cooling input voltage of each set of contact modules 6 are all connected in the circuit, the negative (-) terminals of the cooling input voltage are all connected in the circuit, the positive (+) terminals of the thermoelectric power generation output voltage are all connected in the circuit, and the positive (-) terminals of the thermoelectric power generation output voltage are all connected in the circuit.

[0068] For ease of drawing, we will use 2 sets of contact modules 6 for each package for explanation.

[0069] like Figure 11 and 12As shown, the parallel and series connections of the secondary thermoelectric generator modules 3 are common in practical applications. However, some applications use a series connection as needed. The above only lists the connection methods for the secondary thermoelectric generator modules 3; the connection methods for the tertiary thermoelectric generator modules 3 and beyond are similar in principle to those for the secondary thermoelectric generator modules 3.

[0070] like Figure 13 As shown, the electrical connection packaging of the series-connected semiconductor cooling module 2 and the series-connected thermoelectric power generation module 3 abstracts the multi-stage thermoelectric power generation module 3 into a single-stage thermoelectric power generation module 3. This is illustrated using two sets of contact modules. For this high-density semiconductor electrocooling device with the series-connected packaging of the series-connected semiconductor cooling module 2 and the series-connected thermoelectric power generation module 3, multiple such high-density semiconductor electrocooling devices can be arbitrarily spliced ​​together. The semiconductor cooling module 2 and the thermoelectric power generation module 3 are connected in series between the devices, as shown below. Figure 14 As shown, multiple high-density semiconductor cooling devices, such as semiconductor cooling module 2 connected in series and thermoelectric power generation module 3 connected in series, are spliced ​​together. The positive terminal of semiconductor cooling module 2 is connected to the negative terminal of another splicing device, semiconductor cooling module 2, and the positive terminal of thermoelectric power generation module 3 is connected to the negative terminal of another splicing device, thermoelectric power generation module 3.

[0071] like Figure 15 As shown, the electrical connection packaging of the parallel semiconductor cooling module 2 and the parallel thermoelectric power generation module 3 is illustrated using two sets of contact modules. For this high-density semiconductor electro-cooling device with the parallel semiconductor cooling module 2 and the parallel thermoelectric power generation module packaging, multiple such high-density semiconductor electro-cooling devices are spliced ​​together. The semiconductor cooling module 2 and the thermoelectric power generation module 3 are connected in parallel between the devices, as shown below. Figure 16 As shown, multiple high-density semiconductor refrigeration devices, such as semiconductor refrigeration module 2 connected in parallel and thermoelectric power generation module 3 connected in parallel, are spliced ​​together. The positive terminal of semiconductor refrigeration module 2 is connected to the positive terminal of another splicing device semiconductor refrigeration module 2, the positive terminal of thermoelectric power generation module 3 is connected to the positive terminal of another splicing device thermoelectric power generation module 3, the negative terminal of semiconductor refrigeration module 2 is connected to the negative terminal of another splicing device semiconductor refrigeration module 2, and the negative terminal of thermoelectric power generation module 3 is connected to the negative terminal of another splicing device thermoelectric power generation module 3.

[0072] like Figure 17As shown, the electrical connection package of the series-connected semiconductor cooling module 2 and the parallel-connected thermoelectric power generation module 3 is illustrated using two sets of contact modules. For this high-density semiconductor electrocooling device with the series-connected semiconductor cooling module 2 and the parallel-connected thermoelectric power generation module 3, multiple such high-density semiconductor electrocooling devices are spliced ​​together. The semiconductor cooling module 2 is connected in series between the devices, while the thermoelectric power generation module 3 is connected in parallel, as shown... Figure 18 As shown, multiple high-density semiconductor refrigeration devices, consisting of a semiconductor refrigeration module 2 connected in series and a thermoelectric power generation module 3 connected in parallel, are spliced ​​together. The positive terminal of the semiconductor refrigeration module 2 is connected to the negative terminal of another splicing device, the positive terminal of the thermoelectric power generation module 3 is connected to the positive terminal of another splicing device, the negative terminal of the semiconductor refrigeration module 2 is connected to the positive terminal of another splicing device, and the negative terminal of the thermoelectric power generation module 3 is connected to the negative terminal of another splicing device.

[0073] like Figure 19 The high-density semiconductor electro-cooling device, which uses a series connection of semiconductor cooling modules 2 and a parallel connection of thermoelectric power generation modules 3, is illustrated using two sets of contact modules. When multiple such devices are connected together, the semiconductor cooling modules 2 are connected in parallel, while the thermoelectric power generation modules 3 are connected in series. Figure 20 As shown, multiple high-density semiconductor cooling devices, such as semiconductor cooling modules 2 connected in parallel and thermoelectric power generation modules 3 connected in series, are spliced ​​together. The positive terminal of semiconductor cooling module 2 is connected to the positive terminal of another splicing device semiconductor cooling module 2, the positive terminal of thermoelectric power generation module 3 is connected to the negative terminal of another splicing device thermoelectric power generation module 3, the negative terminal of semiconductor cooling module 2 is connected to the negative terminal of another splicing device semiconductor cooling module 2, and the negative terminal of thermoelectric power generation module 3 is connected to the positive terminal of another splicing device thermoelectric power generation module 3.

[0074] As an optional embodiment, the energy storage unit 5 includes a cooling power supply module 9 and a thermoelectric power generation and energy storage module 10. The cooling power supply module 9 is electrically connected to the semiconductor cooling module 2. The thermoelectric power generation and energy storage module 10 includes a battery and a charging adapter. The battery is electrically connected to the thermoelectric power generation module 3. The charging adapter is electrically connected to both the battery and the thermoelectric power generation module 3. The input voltage of the cooling power supply module 9 is also customized to one of 5V, 9V, 12V, 24V, 36V, and 48V.

[0075] like Figure 1 , Figure 3 , Figure 11 and Figure 14As shown, the cooling power supply module 9 and the thermoelectric power generation and storage module 10 are used to power and store electrical energy generated by the thermoelectric power generation of multiple high-density semiconductor electro-cooling devices spliced ​​together. First, the cooling power supply module 9 provides a direct current. The voltage and load current of the power supply are determined based on the customized input voltage of the high-density semiconductor electro-cooling device (e.g., 5V or 9V) and the number of spliced ​​high-density semiconductor electro-cooling devices. The thermoelectric power generation and storage module 10 involves connecting multiple high-density semiconductor electro-cooling devices in parallel. The electrical energy generated by the thermoelectric power generation module 3 is stored within it. The battery capacity of the thermoelectric power generation and storage module 10 needs to be determined based on parameters such as the thermoelectric power generation output voltage design of the high-density semiconductor electro-cooling device and the number of spliced ​​high-density semiconductor electro-cooling devices. In addition, the thermoelectric power generation and storage module 10 can also be part of the cooling power supply module 9. That is to say, the electricity generated by the thermoelectric power generation module 3 is stored in the thermoelectric power generation and storage module 10. The cooling power supply module 9 and the thermoelectric power generation and storage module 10 use power management functions and algorithms to continuously allocate the electrical energy in the thermoelectric power generation and storage module 10 to supply power to the cooling power supply module 9, without affecting the energy storage function of the thermoelectric power generation and storage module 10 (energy storage can supply power to the cooling power supply module 9 and can also continuously store the electrical energy generated by the thermoelectric power generation module 3).

[0076] like Figure 2 As shown, this invention simultaneously applies the semiconductor cooling (TEC) mode (Peltier effect) and power generation (TEG) mode (Seebeck effect). The working principle of the semiconductor cooling (TEC) mode is that a closed loop composed of two materials will cause charge carriers to move in a directional manner when direct current is applied to the outside. The charge carriers will absorb heat at one junction (cooling) and release heat at the other junction (heating).

[0077] Conversely, in a closed circuit composed of two materials, when semiconductors are present at both ends of the thermocouple, heat drives the directional movement of charge carriers (holes and electrons), generating an electromotive force in the circuit, thereby producing electricity. Furthermore, based on the Pamir effect, this high-density semiconductor electrocooling device can also be converted into a high-density semiconductor electroheating device simply by changing the polarity of the conductive electrode.

[0078] like Figure 3 The principle of achieving mutual energy enhancement and recycling between thermoelectric power generation and semiconductor refrigeration is explained as follows: (1) The cold end of the semiconductor cooling module 2 of this high-density semiconductor electrocooling device is close to the surface that needs to be cooled, such as food, chips, computers, batteries, medicines, etc.

[0079] (2) The hot end of the semiconductor cooling module 2 of this high-density semiconductor electro-cooling device is attached to the hot end of the thermoelectric power generation module 3 for thermoelectric power generation.

[0080] (3) The electrical energy generated by the thermoelectric generator 3 is connected to the battery after passing through the energy storage management device. The battery is used to collect the electrical energy generated by the thermoelectric generator 3.

[0081] (4) Vacuum insulation materials such as glass fiber are added around the semiconductor cooling module 2 of this high-density semiconductor electrocooling device to prevent the heat energy emitted from the hot end of the semiconductor cooling module 2 from being lost.

[0082] (5) The semiconductor cooling module 2 of this high-density semiconductor electrocooling device is surrounded by a material with good strength, high temperature resistance and good adhesion, such as alkali-activated aluminosilicate dehydration condensation system (ACP).

[0083] (6) The thermoelectric power generation module 3 should be installed in the space around the semiconductor refrigeration module 2 with vacuum insulation materials such as glass fiber, and the hot end should be in contact with the hot end of the semiconductor refrigeration module 2 so that all the heat energy emitted by the hot end of the semiconductor refrigeration module 2 is used for thermoelectric power generation.

[0084] As an optional embodiment, the contact module 6 may be interfaced in one or more ways, including spring-loaded contacts and magnetic contacts.

[0085] like Figure 21 and Figure 22 As shown, in addition to using spring-loaded contacts and magnetic contacts, other forms of contacts can also be used to implement the unified IoT interface. The advantage of using contact module 6 is that it allows the high-density semiconductor electrocooling devices to be directly spliced ​​together without the need for complex circuit design and wiring design, which facilitates application and installation.

[0086] As an optional embodiment, a heat dissipation module 11 is also included, which is thermally coupled to the cold end of the thermoelectric power generation module 3.

[0087] like Figure 1 , Figure 11 and Figure 12 As shown, since the low-temperature end of the thermoelectric power generation module 3 passively absorbs heat and rises in temperature during power generation, in order to maintain a constant temperature difference and avoid efficiency degradation, the cold end of the thermoelectric power generation module 3 needs to be dissipated in a timely manner by a heat dissipation module 11. The heat dissipation module 11 can take the form of a heat sink (fan + heat sink, water cooling / liquid cooling, heat spreader + heat sink), (air cooling + water cooling hybrid, thermal paste assistance), etc. It can be integrated with the novel high-density semiconductor electro-cooling device into a whole, or it can be a separate device. That is, many novel high-density semiconductor electro-cooling devices are combined into a cooling device, and then the heat dissipation module 11 is added to the cold end of the thermoelectric power generation module 3.

[0088] The installation and usage process for this high-density semiconductor electrocooling device is as follows: (1) Based on the actual application scenario of the cooling requirements, evaluate the actual cooling area of ​​this high-density semiconductor electro-cooling device, and determine which type of regular hexagonal prism, square prism, or equilateral triangular prism should be used for splicing this high-density semiconductor electro-cooling device. Among them, multiple regular hexagonal prisms can be used for splicing in curved surface cooling scenarios, multiple regular hexagonal prisms can be used for splicing in planar surface cooling scenarios, and multiple equilateral triangular prisms can be used as a supplement to planar and curved surface splicing. In addition, determine how many regular hexagonal prisms of this high-density semiconductor electro-cooling device need to be spliced ​​together in this scenario, how many square prisms of this high-density semiconductor electro-cooling device need to be spliced ​​together, and how many equilateral triangular prisms of this high-density semiconductor electro-cooling device need to be spliced ​​together. (2) The high-density semiconductor electro-cooling device is assembled and fixed onto the object to be cooled (e.g., container, water tank, etc.); (3) Install the cooling power supply module 9 and the thermoelectric power generation and energy storage module 10. When installing the cooling power supply module 9, according to the number of high-density semiconductor electric cooling devices spliced ​​and the connection method of series or parallel connection, adopt the appropriate voltage and current of the cooling power supply module 9 (for example, the power supply voltage of the cooling power supply module 9 connected in series with 10 5V high-density semiconductor electric cooling devices is 10*5=50V, etc.).

[0089] Similarly, when installing the thermoelectric power generation and energy storage module 10, the appropriate voltage adapter for the thermoelectric power generation module 10 should be adopted according to the number of high-density semiconductor electro-cooling devices spliced ​​and the connection method of series or parallel connection (for example, the power supply voltage of the thermoelectric power generation module 10 with 5 12V high-density semiconductor electro-cooling devices in series is 12*5=60V, etc.).

[0090] (4) Install heat dissipation module 11 at the cold end of thermoelectric power generation module 3.

[0091] (5) After installing the heat dissipation module 11 on the cold end of the high-density semiconductor electro-cooling device, it is electrically connected to the cooling power module 9, the battery and the adapter to complete the power supply of the high-density semiconductor electro-cooling device and the energy storage of thermoelectric power generation, so as to realize the function of mutual energy support and recycling of thermoelectric power generation and semiconductor cooling.

[0092] (6) Finally, the unused contact insulation protection module 7 is installed on the unused contacts of the spliced ​​high-density semiconductor electrocooling device to prevent leakage, electric shock and other unsafe events.

[0093] A method for energy recycling of a high-density semiconductor electrocooling device, the method comprising the following steps: Power is supplied to at least one semiconductor cooling module 2, causing it to cool one side and heat the opposite side; The thermoelectric power generation module 3 generates electricity by utilizing the temperature difference established between the heating side of the semiconductor cooling module 2 and the hot end of the thermoelectric power generation module 3. The electrical energy generated by the thermoelectric power generation module 3 is managed and stored in an energy storage unit 5; The electrical energy stored in the energy storage unit 5 is fed back at least partially to the semiconductor cooling module 2 to assist or maintain its cooling function. Specifically, through the thermoelectric power generation step, the power management and storage step, and the energy feedback step, the heat energy generated during the semiconductor cooling process is partially recovered and converted into electrical energy for recycling.

[0094] As an optional embodiment, in the power management and storage step, current sharing control technology is used to manage the current output of multiple thermoelectric power generation modules 3 connected in parallel.

[0095] Those skilled in the art should understand that the discussion of any of the above embodiments is merely exemplary and is not intended to imply that the scope of the invention is limited to these examples; within the framework of the invention, the technical features of the above embodiments or different embodiments can also be combined, the steps can be implemented in any order, and there are many other variations of the different aspects of the invention as described above, which are not provided in detail for the sake of brevity. Any omissions, modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the invention should be included within the scope of protection of the invention.

Claims

1. A high-density semiconductor electro-thermal refrigeration device, characterized by, The application relates to a thermoelectric power generation module, which comprises the following components: at least one external packaging module (1) internally provided with at least one semiconductor refrigeration module (2) which generates a refrigeration effect on one side and a heating effect on the opposite side when powered; at least one thermoelectric power generation module (3) arranged in the internal part of the external packaging module (1), the hot end of the thermoelectric power generation module (3) being coupled with the heating side of the semiconductor refrigeration module (2) to generate power by utilizing the temperature difference between the two; a circuit adaptation module (4) arranged in the internal part of the external packaging module (1), the circuit adaptation module (4) being electrically connected with the thermoelectric power generation module (3) to manage the power generated by the thermoelectric power generation module (3); a storage unit (5) electrically connected with the circuit adaptation module (4) to store the power generated by the thermoelectric power generation module (3); a contact module (6) arranged on the circuit adaptation module (4), and the positive and negative poles of the thermoelectric power generation module (3) and the positive and negative poles of the semiconductor refrigeration module (2) being packaged in the internal part of the external packaging module (1) in the form of external contacts through the contact module (6); a non-use contact insulation protection module (7) for blocking the non-use contact of the thermoelectric power generation module (3); wherein the storage unit (5) and the semiconductor refrigeration module (2) form an electrical loop, and the stored power can be at least partially supplied to the semiconductor refrigeration module (2) for use, thereby forming a partial energy recycling system. The semiconductor refrigeration module (2) and the thermoelectric power generation module (3) are fixedly connected through high-temperature-resistant heat-conducting glue (8). The external packaging module (1) is in the shape of one of a regular triangular column, a square column and a regular hexagonal column, and the edge length and height of all the regular triangular columns, square columns and regular hexagonal columns are the same, so as to facilitate splicing use. The circuit adaptation module (4) comprises a current equalization control circuit for balancing the output currents of the thermoelectric power generation modules (3) when a plurality of the modules are spliced. The thermoelectric power generation module (3) is in a single-stage or multi-stage structure, the multi-stage structure comprises two-stage or three-stage thermoelectric power generation modules (3) which are electrically connected in series or in parallel, and the output voltage of the thermoelectric power generation module (3) is customized as one of 5V, 9V, 12V, 24V, 36V and 48V. The storage unit (5) comprises a refrigeration power module (9) and a thermoelectric power generation storage module (10), the refrigeration power module (9) is electrically connected with the semiconductor refrigeration module (2), the thermoelectric power generation storage module (10) comprises a storage battery and a charging adapter, the storage battery is electrically connected with the thermoelectric power generation module (3), the charging adapter is electrically connected with the storage battery and the thermoelectric power generation module (3) respectively, and the input voltage of the refrigeration power module (9) is also customized as one of 5V, 9V, 12V, 24V, 36V and 48V. The contact module (6) is in the form of one or more of a spring contact and a magnetic contact. ​ 2. The high-density semiconductor electro-thermal device of claim 1, wherein, ​ 3. The high-density semiconductor electro-thermal device of claim 1, wherein, ​ 4. The high-density semiconductor electro-thermal device of claim 1, wherein, ​ 5. The high-density semiconductor electro-thermal device of claim 1, wherein, ​ 6. The high-density semiconductor electro-thermal device of claim 1, wherein, ​ 7. The high-density semiconductor electrocooling device as described in claim 1, characterized in that, ​ 8. The high-density semiconductor electro-thermal device of claim 1, wherein, A heat dissipation module (11) is further included, which is thermally coupled to the cold end of the thermoelectric power generation module (3).

9. A method for recycling energy of a high-density semiconductor electro- refrigeration device, characterized in that, The method comprises the following steps: Power is supplied to at least one semiconductor refrigeration module (2) to make one side of the semiconductor refrigeration module (2) refrigerate and the opposite side heat; Power is generated by a thermoelectric power generation module (3) using the temperature difference between the heating side of the semiconductor refrigeration module (2) and the hot end of the thermoelectric power generation module (3); The power generated by the thermoelectric power generation module (3) is managed and stored in an energy storage unit (5); The power stored in the energy storage unit (5) is at least partially fed back to the semiconductor refrigeration module (2) to assist or maintain the refrigeration function of the semiconductor refrigeration module (2); Through the power generation step, the power management and storage step, and the energy feedback step, the heat generated in the semiconductor refrigeration process is partially recovered and converted into electrical energy for recycling.

10. The method of claim 9, wherein, In the power management and storage step, a current sharing control technology is used to manage the current output by multiple thermoelectric power generation modules (3) in parallel.

Images