Etching device

Abstract

The invention provides an etching device which is used for etching a part to be etched. The etching device comprises a shell, a first electrode, a second electrode and an insulating part. The shell comprises an accommodating cavity. The first electrode, the second electrode and the insulating part are all accommodated in the accommodating cavity. In the first direction, the second electrode and the first electrode are oppositely arranged at an interval, the insulating part is arranged between the first electrode and the second electrode, the part to be etched is installed on the insulating part, and the first direction is the thickness direction of the etching device. Wherein plasma can be generated between the first electrode and the second electrode, the plasma comprises a non-sheath layer area, a first sheath layer area and a second sheath layer area, in the first direction, the first electrode, the first sheath layer area, the non-sheath layer area, the second sheath layer area and the second electrode are sequentially arranged, and the insulating part enables the part to be etched to be located in the non-sheath layer area. The etching directivity can be weakened, isotropic etching of the to-be-etched part can be realized, and the control on the etching morphology can be widened. And moreover, the application scene is wide, and the universality is high.

Description

Technical Field

[0001] This application relates to the field of etching technology, and more particularly to an etching apparatus. Background Technology

[0002] In existing etching apparatuses, a first electrode and a second electrode are positioned opposite each other and spaced apart along the thickness direction of the etching apparatus. Plasma is generated between the first and second electrodes. After being accelerated by the electric field between the first and second electrodes, the plasma bombards the workpiece to be etched along the thickness direction of the etching apparatus, thus achieving etching. However, such etching has strong directionality, and existing etching apparatuses have the problem of difficulty in achieving isotropic etching of the workpiece. Summary of the Invention

[0003] This application provides an etching apparatus designed to solve the problem of the inability to achieve isotropic etching.

[0004] This application provides an etching apparatus for etching a workpiece. The etching apparatus includes a housing, a first electrode, a second electrode, and an insulating member. The housing includes a receiving cavity. The first electrode, the second electrode, and the insulating member are all housed within the receiving cavity. In a first direction, the second electrode is positioned opposite and spaced apart from the first electrode, and the insulating member is disposed between the first and second electrodes. The workpiece to be etched is mounted on the insulating member. The first direction is the thickness direction of the etching apparatus. Plasma can be generated between the first and second electrodes. The plasma includes a non-sheath region, a first sheath region, and a second sheath region. In the first direction, the first electrode, the first sheath region, the non-sheath region, the second sheath region, and the second electrode are arranged sequentially. The insulating member ensures that the workpiece to be etched is located in the non-sheath region.

[0005] In the etching apparatus provided in this application embodiment, the workpiece to be etched is located in the non-sheath region of the plasma through an insulating component. Etching is achieved by a chemical reaction between the particles in the non-sheath region and the workpiece. Since an electric field exists between the first and second electrodes, the electric field is weaker in the non-sheath region and stronger in the first and second sheath regions. Charged particles in the first and second sheath regions accelerate along a first direction under the influence of the electric field.

[0006] Compared to existing technologies, the design, which places the workpiece to be etched within the non-sheath region of the plasma using an insulating component, ensures that etching is achieved solely through particles from the non-sheath region. This avoids the situation where particles from the first and second sheath regions bombard the workpiece along the first direction, preventing a faster etching rate in the first direction. This helps reduce the directionality of the etching, achieving isotropic etching and broadening the control over the etching morphology. Moreover, this design has wide applicability and versatility, and can be flexibly applied to isotropic etching of various workpieces.

[0007] In one possible implementation, in a first direction, the insulating member is in contact with the first electrode, the size of the insulating member in the first direction is larger than the size of the first sheath region in the first direction, and smaller than the sum of the size of the non-sheath region in the first direction and the size of the first sheath region in the first direction, and the part to be etched is mounted on the side of the insulating member facing away from the first electrode.

[0008] In the first direction, the insulating component is in contact with the first electrode. The dimension of the insulating component in the first direction is larger than the dimension of the first sheath region in the first direction, and smaller than the sum of the dimensions of the non-sheath region in the first direction and the dimensions of the first sheath region in the first direction. The component to be etched is mounted on the side of the insulating component facing away from the first electrode. The first electrode supports the insulating component, and the insulating component supports the component to be etched. By controlling the dimension of the insulating component in the first direction, the component to be etched can be located in the non-sheath region of the plasma. This design is not only simple and easy to design, but also helps to reduce the cost of achieving isotropic etching of the component to be etched.

[0009] In one possible implementation, the part to be etched is in contact with an insulating part, and the sum of the dimensions of the insulating part in the first direction and the dimensions of the part to be etched in the first direction is smaller than the sum of the dimensions of the non-sheath region in the first direction and the dimensions of the first sheath region in the first direction.

[0010] The design where the part to be etched contacts the insulating component, and the sum of the dimensions of the insulating component and the part to be etched in the first direction is smaller than the sum of the dimensions of the non-sheath region and the first sheath region in the first direction, ensures that the part to be etched is entirely located within the non-sheath region, thereby achieving isotropic etching. Furthermore, this design, where the part to be etched contacts the insulating component, avoids the presence of other components between them, reducing the structural complexity of the etching apparatus and facilitating its miniaturization.

[0011] In one possible implementation, the area of ​​the insulating element projected in the first direction is smaller than the area of ​​the element to be etched projected in the first direction.

[0012] The design that the area of ​​the insulating component projected in the first direction is smaller than the area of ​​the component to be etched projected in the first direction is beneficial to reducing the area occupied by the insulating component on the first electrode, reducing the influence of the insulating component on the formation of the first sheath region of the plasma, avoiding the increase in the size of the first sheath region in the first direction due to the insulating component, reducing the size of the insulating component in the first direction, facilitating the miniaturization and lightweight design of the insulating component, and reducing the cost of isotropic etching of the component to be etched.

[0013] In one possible implementation, the projection of the part to be etched in the first direction is located within the projection of the insulating part in the first direction.

[0014] The design that the projection of the part to be etched in the first direction is located within the projection of the insulating part in the first direction ensures that the insulating part and the part to be etched have a large contact area, which is beneficial to improving the supporting effect of the insulating part on the part to be etched and improving the etching stability of the part to be etched.

[0015] In one possible implementation, the insulating element is made of a thermally conductive and insulating material.

[0016] The insulating component is designed to be made of thermally conductive and insulating material. Heating the first electrode can heat the workpiece to be etched through the insulating component, which meets the requirement of heating the workpiece to be etched during the etching process and helps to broaden the etching scenarios.

[0017] In one possible implementation, the insulating member is fixedly connected to the cavity wall of the receiving cavity. In a first direction, the insulating member is spaced apart from the first electrode and the second electrode. The insulating member is located in the non-sheath region. In the first direction, the part to be etched is mounted on one side of the insulating member. The sum of the dimensions of the insulating member in the first direction and the dimensions of the part to be etched in the first direction is smaller than the dimensions of the non-sheath region in the first direction.

[0018] The insulating component is fixedly connected to the cavity wall of the receiving cavity. In the first direction, the insulating component is spaced apart from the first electrode and the second electrode. The design of the insulating component being located in the non-sheath layer region ensures that the part to be etched can be located in the non-sheath layer region through the insulating component, while avoiding contact or even collision between the insulating component and the first electrode and the second electrode. This avoids damage to the first electrode and the second electrode caused by the insulating component, which is beneficial to improving the safety of the etching device and extending the working life of the etching device.

[0019] In one possible implementation, in a first direction, the insulating member abuts between the first electrode and the second electrode, and in a second direction, the part to be etched is fixedly connected to one side of the insulating member, and the second direction is perpendicular to the first direction.

[0020] In the first direction, the insulating element is designed to abut between the first electrode and the second electrode. The insulating element can support the first electrode and the second electrode, which helps to improve the structural stability and reliability of the etching device.

[0021] In one possible implementation, the area of ​​the insulating member projected in the first direction is smaller than the area of ​​the first electrode projected in the first direction, and smaller than the area of ​​the second electrode projected in the first direction.

[0022] The design that the area of ​​the insulating component projected in the first direction is smaller than the area of ​​the first electrode projected in the first direction and smaller than the area of ​​the second electrode projected in the first direction avoids the formation of the plasma sheath region on the side of the insulating component facing the object to be etched. This helps to reduce the difficulty of placing the object to be etched in the non-sheath region and reduces the cost of isotropic etching of the object to be etched.

[0023] In one possible implementation, the containment cavity contains the processing gas, and the etching apparatus further includes at least one radio frequency power source, a first electrode electrically connected to at least one radio frequency power source, and / or, a second electrode electrically connected to at least one radio frequency power source.

[0024] The radio frequency power supply is used to create an electric field between the first electrode and the second electrode to excite the process gas to ionize and generate plasma.

[0025] By controlling the frequency of the radio frequency power supply, the dimensions of the first sheath region and the second sheath region in the first direction can be controlled, thereby controlling the dimensions of the insulating component in the first direction, which is beneficial for the miniaturization and lightweight design of the insulating component. Attached Figure Description

[0026] To more clearly illustrate the technical solutions in the embodiments of this application or the background art, the accompanying drawings used in the embodiments of this application or the background art will be described below.

[0027] Figure 1 This is a schematic diagram of the structure of an etching apparatus provided in an embodiment of this application;

[0028] Figure 2 yes Figure 1 The diagram shows a cross-section of the etching apparatus along line AA.

[0029] Figure 3 yes Figure 1 An enlarged view of section III of the etching apparatus shown;

[0030] Figure 4 yes Figure 1 A schematic diagram of the etching apparatus shown in another embodiment;

[0031] Figure 5 yes Figure 4 A schematic diagram of the etching apparatus shown, cut along line BB;

[0032] Figure 6 yes Figure 1 A schematic diagram of the etching apparatus shown in another embodiment;

[0033] Figure 7 yes Figure 6 A schematic diagram of the etching apparatus shown, cut along the CC line;

[0034] Figure 8 yes Figure 1 A schematic diagram of the etching apparatus shown in another embodiment;

[0035] Figure 9 yes Figure 8 A schematic diagram of the etching apparatus shown, cut along the DD line;

[0036] Figure 10 This is a schematic flowchart of an etching method based on an etching apparatus provided in an embodiment of this application;

[0037] Figure 11 yes Figure 10 A schematic diagram of the structure of a workpiece to be etched provided by the etching method shown;

[0038] Figure 12 yes Figure 10 The diagram shows a structure in which the part to be etched is mounted on an insulating part in the etching method shown.

[0039] Figure 13 yes Figure 10 A schematic diagram of the structure of an etched part manufactured using the etching method shown.

[0040] Figure 14 This is a schematic diagram of a method for verifying that the etching of the workpiece to be etched is isotropic, provided in an embodiment of this application.

[0041] Explanation of reference numerals in the attached figures:

[0042] 10 - Shell;

[0043] 11-Receiving cavity; 12-First housing; 13-Second housing; 14-Air inlet; 15-Air outlet;

[0044] 100 - Etching apparatus; 121 - First connecting wall; 122 - Second connecting wall;

[0045] 20 - First electrode;

[0046] 200 - Part to be etched; 201 - Main body; 202 - Layer to be etched; 203 - Etched layer;

[0047] 200a - Etched part; 200b - First part to be etched; 200c - Second part to be etched; 200d - Third part to be etched; 200e - Fourth part to be etched; 2011 - First surface; 2012 - Second surface; 2013 - Groove; 2021 - First part; 2022 - Second part; 2023 - Third part; 2031 - Fourth part; 2032 - Fifth part; 2033 - Sixth part;

[0048] 2013a - Bottom wall; 2013b - Side wall;

[0049] 30 - Second electrode;

[0050] 40 - Insulating parts;

[0051] 50-RF power supply;

[0052] 60-capacitor;

[0053] 70-Plasma;

[0054] 71 - Non-sheath region; 72 - First sheath region; 73 - Second sheath region. Detailed Implementation

[0055] The embodiments of this application are described below with reference to the accompanying drawings.

[0056] Please see Figure 1 , Figure 2 and Figure 3 , Figure 1 This is a schematic diagram of the structure of an etching apparatus 100 provided in an embodiment of this application. Figure 2 yes Figure 1 The etching apparatus 100 shown is a schematic diagram cut along line AA. Figure 3 yes Figure 1 An enlarged view of part III of the etching apparatus 100 shown. It should be noted that the arrangement of the trench 2013 shown is only schematic, and the size of the trench 2013 is not limited to the size shown.

[0057] For example, the etching apparatus 100 is a CCP-RIE (Capacitively Coupled Plasma Reactive Ion Etching) etching apparatus. The etching apparatus 100 is used to etch the workpiece 200. The workpiece 200 can be a wafer or silicon wafer or other structural component that needs to be etched. For ease of description, this application defines any two perpendicular directions sequentially as the first direction (i.e., the direction shown in the diagram, i.e., the Z-axis direction) and the second direction (i.e., the X-axis direction). The second direction is perpendicular to the first direction. In this embodiment, the etching apparatus 100 is a cylinder. The first direction (i.e., the Z-axis direction) is the thickness direction of the etching apparatus 100; specifically, the first direction (i.e., the Z-axis direction) is the axial direction of the etching apparatus 100. The second direction (i.e., the X-axis direction) is the radial direction of the etching apparatus 100.

[0058] In some other embodiments, the etching apparatus 100 may also be a rectangular prism. The first direction (i.e., the Z-axis direction shown in the figure) is the thickness direction of the etching apparatus 100. The second direction (i.e., the X-axis direction shown in the figure) may be either the length direction or the width direction of the etching apparatus 100.

[0059] It should be noted that, in this application, "isotropic etching" refers to etching in which the ratio of the difference between the etching rate of the etching apparatus 100 in the second direction and the etching rate of the etching apparatus 100 in the first direction to the etching rate of the etching apparatus 100 in the first direction is less than or equal to 30%. "Anisotropic etching" refers to etching in which the ratio of the difference between the etching rate of the etching apparatus 100 in the second direction and the etching rate of the etching apparatus 100 in the first direction to the etching rate of the etching apparatus 100 in the first direction is less than or greater than 30%.

[0060] The workpiece 200 to be etched includes a body 201 and an etchable layer 202. In the Z-axis direction, the etchable layer 202 covers one side of the body 201. The body 201 includes a first surface 2011 and a second surface 2012. In the Z-axis direction, the first surface 2011 and the second surface 2012 are positioned opposite to each other, and the etchable layer 202 covers the side of the first surface 2011 facing away from the second surface 2012. For example, the body 201 is made of, but is not limited to, silicon oxide or silicon nitride. The etchable layer 202 is made of, but is not limited to, molybdenum, copper, or other materials. The etchable layer 202 is applied to one side of the body 201 in the Z-axis direction using methods including, but not limited to, physical vapor deposition (PVD).

[0061] In some embodiments, the main body 201 is further provided with a groove 2013. The groove 2013 extends from one side of the main body 201 in the Z-axis direction. Specifically, the groove 2013 extends from the first surface 2011 in the Z-axis direction. Exemplarily, the groove 2013 is a circular groove. The groove 2013 includes a bottom wall 2013a and a side wall 2013b, with the side wall 2013b surrounding the bottom wall 2013a. In the Z-axis direction, the bottom wall 2013a is located between the first surface 2011 and the second surface 2012, and is spaced apart from both surfaces. In the Z-axis direction, the side wall 2013b connects the bottom wall 2013a and the first surface 2011. In other embodiments, the groove 2013 may also be a rectangular groove, a triangular groove, or other irregularly shaped groove.

[0062] The etching layer 202 includes a first part 2021, a second part 2022, and a third part 2023. Exemplarily, the first part 2021 is plate-shaped. The second part 2022 is annular. The third part 2023 is annular. The second part 2022 surrounds the outside of the first part 2021. The third part 2023 surrounds the outside of the second part 2022. In the Z-axis direction, the third part 2023 is opposite to and spaced apart from the first part 2021. In the Z-axis direction, the first part 2021 covers the side of the bottom wall 2013a facing away from the second surface 2012, and covers a portion of the bottom wall 2013a. In the Z-axis direction, the second part 2022 covers the side of the bottom wall 2013a facing away from the second surface 2012, and covers another portion of the bottom wall 2013a. The second part 2022 completely covers the side wall 2013b. In the Z-axis direction, the third part 2023 covers the side of the first surface 2011 facing away from the second surface 2012, completely covering the first surface 2011 and surrounding the groove 2013. The thickness dimensions L1 of the first part 2021, M1 of the second part 2022, and N1 of the third part 2023 are equal. In some other embodiments, they may not be equal.

[0063] The etching apparatus 100 includes a housing 10, a first electrode 20, a second electrode 30, an insulating member 40, an RF power supply 50, and a capacitor 60. The first electrode 20, the second electrode 30, and the insulating member 40 are all housed within the housing 10. Plasma 70 is generated between the first electrode 20 and the second electrode 30, and the insulating member 40 is located within the plasma 70. The RF power supply 50 and the capacitor 60 are located outside the housing 10. The RF power supply 50 generates plasma 70 between the first electrode 20 and the second electrode 30 through the capacitor 60. The workpiece 200 to be etched is mounted on the insulating member 40. Etching of the workpiece 200 is achieved through the plasma 70. The insulating member 40 ensures that the etching of the workpiece 200 by the plasma 70 is isotropic.

[0064] The housing 10 includes a receiving cavity 11. The receiving cavity 11 contains a processing gas. The processing gas may be, but is not limited to, a fluorine-containing gas (e.g., sulfur hexafluoride, nitrogen trifluoride, or carbon tetrafluoride) or a chlorine-containing gas (e.g., chlorine or boron trichloride). Specifically, the housing 10 includes a first housing 12 and a second housing 13. The first housing 12 includes the receiving cavity 11, which extends along the Z-axis and has an opening. In the Z-axis direction, the second housing 13 is detachably connected to one side of the first housing 12 and covers the opening of the receiving cavity 11, thus closing the receiving cavity 11. The first housing 12 includes a first connecting wall 121 and a second connecting wall 122. The first connecting wall 121 is plate-shaped, and the second connecting wall 122 is annular. In the Z-axis direction, the second connecting wall 122 is fixedly connected to one side of the first connecting wall 121. In the Z-axis direction, the second housing 13 is detachably connected to the side of the second connecting wall 122 facing away from the first connecting wall 121 by means including but not limited to snaps or screws.

[0065] In some embodiments, the housing 10 further includes an air inlet 14 and an air outlet 15, with the air inlet 14 communicating with the receiving cavity 11. Specifically, the air inlet 14 penetrates the second connecting wall 122 along the X-axis and communicates with the receiving cavity 11. Processing gas can flow into the receiving cavity 11 from the air inlet 14. The air outlet 15 communicates with the receiving cavity 11. The air outlet 15 and the air inlet 14 are spaced apart. Specifically, the air outlet 15 penetrates the second connecting wall 122 along the X-axis. In the X-axis direction, the air outlet 15 and the air inlet 14 are opposite to and spaced apart. Gas in the receiving cavity 11 can flow out of the receiving cavity 11 from the air outlet 15.

[0066] The first electrode 20 is housed in the receiving cavity 11. Specifically, in the Z-axis direction, the first electrode 20 is fixedly connected to the side of the first connecting wall 121 facing the second housing 13, and the first electrode 20 contacts and is fixedly connected to the side of the first connecting wall 121 facing the second housing 13. In the Z-axis direction, the first electrode 20 and the second housing 13 are spaced apart. The first electrode 20 contacts the second connecting wall 122. In some other embodiments, the first electrode 20 may not contact the second connecting wall 122. For example, the first electrode 20 is a circular plate. The axial direction of the first electrode 20 is the Z-axis direction.

[0067] The second electrode 30 is housed in the receiving cavity 11. Specifically, in the Z-axis direction, the second electrode 30 is fixedly connected to the side of the second housing 13 facing the first connecting wall 121, and the second electrode 30 contacts and is fixedly connected to the side of the second housing 13 facing the first connecting wall 121. The second electrode 30 contacts the second connecting wall 122. In some other embodiments, the second electrode 30 may not contact the second connecting wall 122. In the Z-axis direction (i.e., the first direction), the second electrode 30 is opposite to and spaced apart from the first electrode 20. In the Z-axis direction, the air inlet 14 and the air outlet 15 are both located between the first electrode 20 and the second electrode 30, and are spaced apart from both the first electrode 20 and the second electrode 30. For example, the second electrode 30 is a circular plate. The axial direction of the second electrode 30 is the Z-axis direction.

[0068] The insulating member 40 is housed within the receiving cavity 11. In other words, the first electrode 20, the second electrode 30, and the insulating member 40 are all housed within the receiving cavity 11. In the Z-axis direction (i.e., the first direction), the insulating member 40 is disposed between the first electrode 20 and the second electrode 30. Specifically, in the Z-axis direction (i.e., the first direction), the insulating member 40 is located on the side of the first electrode 20 facing the second electrode 30, and the insulating member 40 is in contact with the first electrode 20 and spaced apart from the second electrode 30. In some other embodiments, the insulating member 40 also contacts and is fixedly connected to the first electrode 20.

[0069] For example, the insulating member 40 is a cylinder. The axial direction of the insulating member 40 is the Z-axis direction. The radial dimension of the insulating member 40 is smaller than the radial dimension of the first electrode 20 and smaller than the radial dimension of the second electrode 30. Specifically, the radial dimension of the insulating member 40 is less than or equal to 1 / 5 of the radial dimension of the first electrode 20 and less than or equal to 1 / 5 of the radial dimension of the second electrode 30. The area of ​​the projection of the insulating member 40 in the Z-axis direction (i.e., the first direction) is smaller than the area of ​​the projection of the first electrode 20 in the Z-axis direction (i.e., the first direction) and smaller than the area of ​​the projection of the second electrode 30 in the Z-axis direction (i.e., the first direction). The insulating member 40 is made of a thermally conductive and insulating material. For example, the insulating member 40 is made of a thermally conductive and insulating material including, but not limited to, rubber or thermally conductive silicone.

[0070] In some embodiments, in the Z-axis direction (i.e., the first direction), the part to be etched 200 is mounted on the side of the insulating member 40 facing away from the first electrode 20. Specifically, the part to be etched 200 is located on the side of the insulating member 40 facing away from the first electrode 20, the part to be etched 200 is in contact with the insulating member 40, and the part to be etched 200 is spaced apart from the second electrode 30. The projection of the part to be etched 200 in the Z-axis direction (i.e., the first direction) is located within the projection of the insulating member 40 in the Z-axis direction (i.e., the first direction). In other embodiments, the projection of the part to be etched 200 in the Z-axis direction may also be partially located outside the projection of the insulating member 40 in the Z-axis direction. In this embodiment, the body 201 of the part to be etched 200 is in contact with the insulating member 40. The layer to be etched 202 faces away from the insulating member 40. In the Z-axis direction, the layer to be etched 202 is spaced apart from the second electrode 30. In other embodiments, the part to be etched 200 may also be in contact with and fixedly connected to the insulating member 40.

[0071] In some embodiments, the radio frequency (RF) power supply 50 is located outside the receiving cavity 11. The RF power supply 50 is electrically connected to the first electrode 20. Specifically, the capacitor 60 is located outside the receiving cavity 11, and the RF power supply 50 is electrically connected to the capacitor 60, which in turn is electrically connected to the first electrode 20. The RF power supply 50 is electrically connected to the first electrode 20 through the capacitor 60. That is, the first electrode 20 is electrically connected to the RF power supply 50. In other embodiments, there may be multiple RF power supplies 50, and the first electrode 20 may be electrically connected to multiple RF power supplies 50, i.e., the first electrode 20 may be electrically connected to at least one RF power supply 50.

[0072] The second electrode 30 is grounded. The radio frequency (RF) power supply 50 is used to create an electric field between the first electrode 20 and the second electrode 30 to excite the ionization of the processed gas and generate plasma 70. Specifically, the RF power supply 50 outputs an RF current, which is delivered to the first electrode 20 via a capacitor 60; wherein the capacitor 60 allows alternating current to pass through and blocks direct current. The RF current delivered to the first electrode 20 creates an electric field between the first electrode 20 and the second electrode 30, thereby exciting the ionization of the processed gas and generating plasma 70.

[0073] In some other embodiments, the second electrode 30 may also be electrically connected to at least one radio frequency (RF) power supply 50. Specific connection methods can be found in the description of the first electrode 20. The first electrode 20 and the second electrode 30 may be electrically connected to different RF power supplies 50, or both the first electrode 20 and the second electrode 30 may be electrically connected to the same RF power supply 50. In other embodiments, the second electrode 30 may be electrically connected to at least one RF power supply 50, and the first electrode 20 may be grounded. That is, the etching apparatus 100 includes at least one RF power supply 50, the first electrode 20 is electrically connected to at least one RF power supply 50, and / or, the second electrode 30 is electrically connected to at least one RF power supply 50. The RF power supply 50 can also create an electric field between the first electrode 20 and the second electrode 30 to ionize the processing gas and generate plasma 70.

[0074] The plasma 70 includes a non-sheath region 71, a first sheath region 72, and a second sheath region 73. In the Z-axis direction, the first sheath region 72, the non-sheath region 71, and the second sheath region 73 are stacked sequentially. Specifically, in the Z-axis direction, the first sheath region 72 is stacked between the non-sheath region 71 and the first electrode 20, and the second sheath region 73 is stacked between the non-sheath region 71 and the second electrode 30. That is, in the Z-axis direction (i.e., the first direction), the first electrode 20, the first sheath region 72, the non-sheath region 71, the second sheath region 73, and the second electrode 30 are arranged sequentially. Specifically, in the Z-axis direction, the first electrode 20, the first sheath region 72, the non-sheath region 71, the second sheath region 73, and the second electrode 30 are stacked sequentially.

[0075] exist Figure 1 In the illustrated embodiment, since the mass of electrons in plasma 70 is less than the mass of cations, and the speed of electrons is greater than that of cations, electrons accumulate at the first electrode 20, causing the first electrode 20 to have a negative potential. The first electrode 20 repels subsequent electrons and attracts cations, thereby forming a first sheath region 72 near the first electrode 20. The first sheath region 72 is a space charge layer composed of cations. Under the action of an electric field, the cations in the first sheath region 72 will accelerate and move towards the first electrode 20 along the Z-axis.

[0076] Because the second electrode 30 is grounded, electrons from the second electrode 30 are conducted to the ground, causing cations to accumulate at the second electrode 30. The second electrode 30 attracts electrons and repels cations, thus forming a second sheath region 73 near the second electrode 30. The second sheath region 73 is a space charge layer composed of electrons. Under the influence of the electric field, electrons accelerate towards the second electrode 30 along the Z-axis. The remaining particles in the plasma 70 accumulate between the first sheath region 72 and the second sheath region 73 to form a non-sheath region 71. The intensity of the electric field in the non-sheath region 71 is weaker than that in the first sheath region 72 and the second sheath region 73. Particles in the non-sheath region 71 do not accelerate under the influence of the electric field. In some other embodiments, the first sheath region 72 may also be a space charge layer composed of electrons and ions, and the second sheath region 73 may also be a space charge layer composed of cations. The dimension of the first sheath region 72 in the Z-axis direction is 5%-20% of the distance between the first electrode 20 and the second electrode 30 in the Z-axis direction. The size of the first sheath region 72 in the Z-axis direction is related to the frequency of the plasma 70 (i.e., the frequency of the radio frequency power supply 50) and the composition of the processing gas. The higher the frequency of the plasma 70 (i.e., the frequency of the radio frequency power supply 50), the smaller the size of the first sheath region 72 in the Z-axis direction.

[0077] The dimension of the insulating member 40 in the Z-axis direction (i.e., the first direction) is larger than the dimension of the first sheath region 72 in the Z-axis direction (i.e., the first direction), and smaller than the sum of the dimensions of the non-sheath region 71 and the first sheath region 72 in the Z-axis direction (i.e., the first direction). The sum of the dimensions of the insulating member 40 and the dimension of the part to be etched 200 in the Z-axis direction (i.e., the first direction) is smaller than the sum of the dimensions of the non-sheath region 71 and the first sheath region 72 in the Z-axis direction (i.e., the first direction). The distance between the part to be etched 200 and the second electrode 30 in the Z-axis direction (i.e., the first direction) is larger than the dimension of the second sheath region 73 in the Z-axis direction (i.e., the first direction). The insulating member 40 positions the part to be etched 200 within the non-sheath region 71. Processing gas flows into the receiving cavity 11 from the inlet 14, and plasma 70 is generated by ionization of the processing gas. The particles in the non-sheath region 71 of the plasma 70 react chemically with the etchable layer 202 of the workpiece 200 to achieve etching. During the etching process, the etchable layer 202 generates waste gas, which is discharged from the receiving cavity 11 through the exhaust port 15.

[0078] In the etching apparatus 100 provided in this embodiment, the workpiece 200 to be etched is located in the non-sheath region 71 of the plasma 70 through the insulating member 40. The particles in the non-sheath region 71 react chemically with the workpiece 200 to achieve etching. Since there is an electric field between the first electrode 20 and the second electrode 30, the electric field is weaker in the non-sheath region 71 and stronger in the first sheath region 72 and the second sheath region 73. The charged particles in the first sheath region 72 and the second sheath region 73 will accelerate along the Z-axis direction (i.e., the first direction) under the action of the electric field.

[0079] Compared to existing technologies, the design of placing the workpiece 200 to be etched 70 within the non-sheath region 71 of the plasma 70 via the insulating component 40 ensures that the etching of the workpiece 200 is achieved solely through particles in the non-sheath region 71. This avoids the situation where particles from the first sheath region 72 and the second sheath region 73 bombard the workpiece 200 along the Z-axis direction (i.e., the first direction), thus preventing a faster etching rate in the Z-axis direction (i.e., the first direction). This helps to reduce the directionality of the etching, achieving isotropic etching of the workpiece 200 and broadening the control over the etching morphology. Moreover, this design has a wide range of applications and strong versatility, and can be flexibly applied to the isotropic etching of various workpieces 200.

[0080] In the Z-axis direction (i.e., the first direction), the insulating member 40 is in contact with the first electrode 20. The dimension of the insulating member 40 in the Z-axis direction (i.e., the first direction) is larger than the dimension of the first sheath region 72 in the Z-axis direction (i.e., the first direction) and smaller than the sum of the dimensions of the non-sheath region 71 in the Z-axis direction (i.e., the first direction) and the dimensions of the first sheath region 72 in the Z-axis direction (i.e., the first direction). The design of the part to be etched 200 is mounted on the side of the insulating member 40 facing away from the first electrode 20. The first electrode 20 supports the insulating member 40, and the insulating member 40 supports the part to be etched 200. By controlling the dimension of the insulating member 40 in the Z-axis direction (i.e., the first direction), the part to be etched 200 can be located in the non-sheath region 71 of the plasma 70. This design is not only simple and easy to design, but also helps to reduce the cost of achieving isotropic etching of the part to be etched 200.

[0081] The part to be etched 200 is in contact with the insulating part 40. The design ensures that the sum of the dimensions of the insulating part 40 and the part to be etched 200 in the Z-axis direction (i.e., the first direction) is less than the sum of the dimensions of the non-sheath region 71 and the first sheath region 72 in the Z-axis direction (i.e., the first direction). This design guarantees that the part to be etched 200 is entirely located within the non-sheath region 71, thereby achieving isotropic etching of the part to be etched 200. Moreover, the design that the part to be etched 200 is in contact with the insulating part 40 avoids the presence of other components between them, which helps reduce the structural complexity of the etching apparatus 100 and facilitates its miniaturization.

[0082] By controlling the frequency of the RF power supply 50, the dimensions of the first sheath region 72 in the Z-axis direction (i.e., the first direction) and the second sheath region 73 in the Z-axis direction (i.e., the first direction) can be controlled, thereby controlling the dimensions of the insulating component 40 in the Z-axis direction (i.e., the first direction), which is beneficial for the miniaturization and lightweight design of the insulating component 40.

[0083] The design of having an area smaller than that of the first electrode 20 projected in the Z-axis direction (i.e., the first direction) and smaller than that of the second electrode 30 projected in the Z-axis direction (i.e., the first direction) avoids the formation of the first sheath region 72 (i.e., the sheath region) of the plasma 70 on the side of the insulating component 40 facing the etched component 200. This helps to reduce the difficulty of the insulating component 40 in placing the etched component 200 in the non-sheath region 71 and reduces the cost of isotropic etching of the etched component 200.

[0084] The design that the projection of the part to be etched 200 in the Z-axis direction (i.e., the first direction) is located within the projection of the insulating part 40 in the Z-axis direction (i.e., the first direction) ensures that the insulating part 40 and the part to be etched 200 have a large contact area, which is beneficial to improving the support effect of the insulating part 40 on the part to be etched 200 and improving the stability of etching the part to be etched 200.

[0085] Because the insulating component 40 is made of a thermally conductive and insulating material, when the first connecting wall 121 heats the first electrode 20, the heat can be transferred to the workpiece 200 to be etched via the insulating component 40, thus heating the workpiece 200. In other words, the design of the insulating component 40, made of a thermally conductive and insulating material, allows the workpiece 200 to be heated via the insulating component 40 when the first electrode 20 is heated, meeting the need for heating the workpiece 200 during the etching process (e.g., accelerating the etching speed by heating the workpiece 200), which helps to broaden the etching scenarios for the workpiece 200.

[0086] Please seeFigure 4 and Figure 5 and combined Figure 1 , Figure 4 yes Figure 1 The etching apparatus 100 shown is illustrated in another embodiment. Figure 5 yes Figure 4 The diagram shows a cross-section of the etching apparatus 100 along line BB. It should be noted that... Figure 5 The dashed circle in the diagram schematically indicates the position of the insulating element 40.

[0087] like Figure 1 , Figure 4 and Figure 5 As shown, Figure 4 The illustrated embodiments and Figure 1 The structures of the illustrated embodiments are similar, the difference being that the area occupied by the insulating member 40 on the first electrode 20 is different. Specifically, in Figure 4 In the illustrated embodiment, there are multiple insulating elements 40. For example, there are four insulating elements 40. In other embodiments, the number of insulating elements 40 may be one, two, three, or more. In the Z-axis direction, each insulating element 40 is located on the side of the first electrode 20 facing the second electrode 30 and is in contact with the first electrode 20, and is spaced apart from the second electrode 30. Multiple insulating elements 40 are spaced apart from each other. In other embodiments, each insulating element 40 may also be in contact with and fixedly connected to the first electrode 20. In the Z-axis direction, the part to be etched 200 is located on the side of each insulating element 40 facing away from the first electrode 20 and is in contact with each insulating element 40. In other embodiments, the part to be etched 200 may also be in contact with and fixedly connected to each insulating element 40.

[0088] In this configuration, the projection of the component to be etched 200 in the Z-axis direction overlaps with the projection of each insulating component 40 in the Z-axis direction, and the area of ​​the projection of the component to be etched 200 in the Z-axis direction is larger than the area of ​​the projection of the multiple insulating components 40 in the Z-axis direction. That is to say, the area of ​​the projection of the insulating component 40 in the Z-axis direction (i.e., the first direction) is smaller than the area of ​​the projection of the component to be etched 200 in the Z-axis direction (i.e., the first direction).

[0089] The design that the area of ​​the insulating component 40 projected in the Z-axis direction (i.e., the first direction) is smaller than the area of ​​the component to be etched 200 projected in the Z-axis direction (i.e., the first direction) is beneficial to reducing the area occupied by the insulating component 40 on the first electrode 20, reducing the influence of the insulating component 40 on the formation of the first sheath region 72 of the plasma 70, avoiding the increase in the size of the first sheath region 72 in the Z-axis direction (i.e., the first direction) due to the insulating component 40, reducing the size of the insulating component 40 in the Z-axis direction (i.e., the first direction), facilitating the miniaturization and lightweight design of the insulating component 40, and reducing the cost of isotropic etching of the component to be etched 200.

[0090] Please see Figure 6 and Figure 7 and combined Figure 1 , Figure 6 yes Figure 1 The etching apparatus 100 shown is illustrated in another embodiment. Figure 7 yes Figure 6 The etching apparatus 100 shown is a schematic diagram of its structure cut along the CC line.

[0091] like Figure 1 , Figure 6 and Figure 7 As shown, Figure 6 The illustrated embodiments and Figure 1 The structures of the illustrated embodiments are similar, but the differences lie in the manner in which the insulating member 40 is disposed between the first electrode 20 and the second electrode 30, and the positional relationship between the workpiece to be etched 200 and the insulating member 40. Specifically, in Figure 6 In the illustrated embodiment, the insulating member 40 abuts against the first electrode 20 and the second electrode 30 in the Z-axis direction (i.e., the first direction). Exemplarily, the insulating member 40 is a rectangular prism. In other embodiments, the insulating member 40 may also be a cylinder, a triangular prism, or other irregular shape. The area of ​​the projection of the insulating member 40 in the Z-axis direction is smaller than the area of ​​the projection of the first electrode 20 in the Z-axis direction, and smaller than the area of ​​the projection of the second electrode 30 in the Z-axis direction.

[0092] In the X-axis direction (i.e., the second direction), the part to be etched 200 is fixedly connected to one side of the insulating member 40. Specifically, in the X-axis direction, the part to be etched 200 contacts and is fixedly connected to one side of the insulating member 40. The part to be etched 200 is located in the non-sheath region 71. The distance between the part to be etched 200 and the first electrode 20 in the Z-axis direction is greater than the dimension of the first sheath region 72 in the Z-axis direction, and the distance between the part to be etched 200 and the second electrode 30 in the Z-axis direction is greater than the dimension of the second sheath region 73 in the Z-axis direction. Thus, the insulating member 40 also allows the part to be etched 200 to be located in the non-sheath region 71, thereby achieving isotropic etching of the part to be etched 200.

[0093] The design of the insulating member 40 having a projected area smaller than that of the first electrode 20 and the second electrode 30 in the Z-axis direction ensures that plasma 70 can be generated between the first electrode 20 and the second electrode 30 for isotropic etching of the workpiece 200. In the Z-axis direction (i.e., the first direction), the insulating member 40 abuts against the first electrode 20 and the second electrode 30, providing support for both electrodes and improving the structural stability and reliability of the etching apparatus 100.

[0094] Please see Figure 8 and Figure 9 and combined Figure 1 , Figure 8 yes Figure 1 The etching apparatus 100 shown is illustrated in another embodiment. Figure 9 yes Figure 8 The etching apparatus 100 shown is a schematic diagram of its structure cut along the DD line.

[0095] like Figure 1 , Figure 8 and Figure 9 As shown, Figure 8 The illustrated embodiments and Figure 1 The embodiments shown are structurally similar, differing only in the manner in which the insulating member 40 is disposed between the first electrode 20 and the second electrode 30. Specifically, in Figure 8 In the illustrated embodiment, the insulating member 40 is fixedly connected to the cavity wall of the receiving cavity 11. Specifically, the insulating member 40 contacts and is fixedly connected to the second connecting wall 122 of the first housing 12, and the second connecting wall 122 surrounds the outside of the insulating member 40. In the Z-axis direction (i.e., the first direction), the insulating member 40 is located between the first electrode 20 and the second electrode 30, and the insulating member 40 is spaced apart from the first electrode 20 and the second electrode 30. The area of ​​the insulating member 40 projected in the Z-axis direction is smaller than the area of ​​the first electrode 20 projected in the Z-axis direction, and smaller than the area of ​​the second electrode 30 projected in the Z-axis direction.

[0096] In the Z-axis direction (i.e., the first direction), the part to be etched 200 is mounted on one side of the insulating member 40. Specifically, in the Z-axis direction, the part to be etched 200 is located on the side of the insulating member 40 facing the second electrode 30 and is in contact with the insulating member 40. In some other embodiments, in the Z-axis direction, the part to be etched 200 may also be located on the side of the insulating member 40 facing the second electrode 30, and is in contact with and fixedly connected to the insulating member 40. In the Z-axis direction, the part to be etched 200 may also be located on the side of the insulating member 40 facing the first electrode 20, and is in contact with and fixedly connected to the insulating member 40.

[0097] The insulating element 40 is located in the non-sheath region 71. The sum of the dimensions of the insulating element 40 and the dimension of the part to be etched 200 in the Z-axis direction (i.e., the first direction) is less than the dimension of the non-sheath region 71 in the Z-axis direction (i.e., the first direction). The distance between the insulating element 40 and the first electrode 20 in the Z-axis direction is greater than the dimension of the first sheath region 72 in the Z-axis direction. The distance between the part to be etched 200 and the second electrode 30 in the Z-axis direction is greater than the dimension of the second sheath region 73 in the Z-axis direction. The insulating element 40 also allows the part to be etched 200 to be located in the non-sheath region 71, thereby achieving isotropic etching of the part to be etched 200.

[0098] The insulating member 40 is fixedly connected to the second connecting wall 122 (i.e., the cavity wall of the receiving cavity 11). In the Z-axis direction (i.e., the first direction), the insulating member 40 is spaced apart from the first electrode 20 and the second electrode 30. The design of the insulating member 40 located in the non-sheath region 71 ensures that the workpiece 200 to be etched can be located in the non-sheath region 71 through the insulating member 40, while avoiding contact or even collision between the insulating member 40 and the first electrode 20 and the second electrode 30. This avoids damage to the first electrode 20 and the second electrode 30 caused by the insulating member 40, which is beneficial to improving the safety of the etching apparatus 100 and extending the working life of the etching apparatus 100.

[0099] Please refer to it again. Figure 1 , Figure 4 , Figure 6 and Figure 8 This application provides an etching apparatus 100 for etching a workpiece 200. The etching apparatus 100 includes: a housing 10, a first electrode 20, a second electrode 30, and an insulating member 40; the housing 10 includes a receiving cavity 11, in which the first electrode 20, the second electrode 30, and the insulating member 40 are all received; in a first direction (i.e., the Z-axis direction shown in the figure), the second electrode 30 is opposite to and spaced apart from the first electrode 20; the insulating member 40 is disposed between the first electrode 20 and the second electrode 30; the workpiece 200 to be etched is mounted on the insulating member 40; the first direction (i.e., the Z-axis direction shown in the figure) is the thickness direction of the etching apparatus 100; wherein, plasma 70 can be generated between the first electrode 20 and the second electrode 30; the plasma 70 includes a non-sheath region 71, a first sheath region 72, and a second sheath region 73; in the first direction (i.e., the Z-axis direction shown in the figure), the first electrode 20, the first sheath region 72, the non-sheath region 71, the second sheath region 73, and the second electrode 30 are arranged sequentially; the insulating member 40 causes the workpiece 200 to be etched to be located in the non-sheath region 71.

[0100] In the etching apparatus 100 provided in this embodiment, the workpiece 200 to be etched is located in the non-sheath region 71 of the plasma 70 through the insulating member 40. The particles in the non-sheath region 71 react chemically with the workpiece 200 to achieve etching. Since there is an electric field between the first electrode 20 and the second electrode 30, the electric field is weaker in the non-sheath region 71 and stronger in the first sheath region 72 and the second sheath region 73. The charged particles in the first sheath region 72 and the second sheath region 73 will accelerate along the Z-axis direction (i.e., the first direction) under the action of the electric field.

[0101] Compared to existing technologies, the design of placing the workpiece 200 to be etched 70 within the non-sheath region 71 of the plasma 70 via the insulating component 40 ensures that the etching of the workpiece 200 is achieved solely through particles in the non-sheath region 71. This avoids the situation where particles from the first sheath region 72 and the second sheath region 73 bombard the workpiece 200 along the Z-axis direction (i.e., the first direction), thus preventing a faster etching rate in the Z-axis direction (i.e., the first direction). This helps to reduce the directionality of the etching, achieving isotropic etching of the workpiece 200 and broadening the control over the etching morphology. Moreover, this design has a wide range of applications and strong versatility, and can be flexibly applied to the isotropic etching of various workpieces 200.

[0102] Please see Figure 10 , Figure 11 , Figure 12 and Figure 13 and combined Figure 1 , Figure 10 This is a schematic flowchart of an etching method 500 based on an etching apparatus 100 provided in an embodiment of this application. Figure 11 yes Figure 10 The etching method 500 shown is a schematic diagram of the structure of a workpiece 200 to be etched. Figure 12 yes Figure 10 The diagram shows the structure of the workpiece 200 to be etched mounted on the insulating member 40 in the etching method 500 shown. Figure 13 yes Figure 10 A schematic diagram of the structure of an etched part 200a manufactured by the etching method shown.

[0103] This application embodiment also provides an etching method 500 based on an etching apparatus 100. The etching method 500 includes:

[0104] like Figure 10 , Figure 11 and Figure 12 As shown, S10 provides an etching apparatus 100 and a workpiece 200 to be etched.

[0105] For example, the structure of the etching apparatus 100 can be referred to Figure 1The relevant descriptions of the illustrated embodiment will not be repeated. The etching apparatus 100 includes a housing 10, a first electrode 20, a second electrode 30, an insulating component 40, an RF power supply 50, and a capacitor 60. The housing 10 includes a receiving cavity 11. Specifically, the housing 10 includes a first housing 12 and a second housing 13. The first housing 12 includes the receiving cavity 11, which extends along the Z-axis and has an opening. The second housing 13 is detachably connected to the first housing 12, and covers and seals the opening of the receiving cavity 11. The housing 10 is provided with an air inlet 14 and an air outlet 15.

[0106] The part to be etched 200 includes a main body 201 and an etchable layer 202. The main body 201 includes a first surface 2011 and a second surface 2012. The main body 201 also has a groove 2013, which extends from the first surface 2011 along the Z-axis direction. The groove 2013 includes a bottom wall 2013a and a side wall 2013b. The etchable layer 202 covers the side of the first surface 2011 facing away from the second surface 2012. Specifically, the etchable layer 202 includes a first part 2021, a second part 2022, and a third part 2023. In the Z-axis direction, the first part 2021 covers the side of the bottom wall 2013a facing away from the second surface 2012, and the first part 2021 covers a portion of the bottom wall 2013a. In the Z-axis direction, the second part 2022 covers the side of the bottom wall 2013a facing away from the second surface 2012, and also covers another part of the bottom wall 2013a. The second part 2022 completely covers the side wall 2013b. In the Z-axis direction, the third part 2023 covers the side of the first surface 2011 facing away from the second surface 2012, and also completely covers the first surface 2011, surrounding the groove 2013. The thickness dimensions L1 of the first part 2021, M1 of the second part 2022, and N1 of the third part 2023 are equal. In some other embodiments, they may not be equal. See details for further information. Figure 1 The relevant descriptions of the illustrated embodiments will not be repeated. The thickness dimensions L1 of the first part 2021, M1 of the second part 2022, and N1 of the third part 2023 can be measured by scanning electron microscopy (SEM) or transmission electron microscopy (TEM), or by optical or probe methods.

[0107] For example, the body 201 is made of materials including, but not limited to, silicon oxide or silicon nitride. The layer to be etched 202 is made of materials including, but not limited to, molybdenum, copper, or other materials. The layer to be etched 202 is applied to one side of the body 201 in the Z-axis direction by means including, but not limited to, physical vapor deposition.

[0108] like Figure 10 and Figure 12 As shown, in step S20, the workpiece 200 to be etched is mounted on the insulating part 40 of the etching apparatus 100 and housed in the receiving cavity 11.

[0109] Specifically, the connection between the first housing 12 and the second housing 13 is disconnected, exposing the opening of the receiving cavity 11 to the external environment. The part to be etched 200 is then mounted on the insulating member 40. Specifically, the part to be etched 200 is mounted on the side of the insulating member 40 facing away from the first electrode 20 from the opening of the receiving cavity 11. The second housing 13 is then mounted on the first housing 12, so that the second housing 13 covers the opening of the receiving cavity 11 and seals the receiving cavity 11. The main body 201 of the part to be etched 200 is mounted on the insulating member 40, and the layer to be etched 202 faces away from the insulating member 40. The mating relationship between the part to be etched 200 and the insulating member 40 can be referred to the previous description and will not be repeated here.

[0110] like Figure 1 , Figure 10 and Figure 13 As shown, in step S30, plasma 70 is generated between the first electrode 20 and the second electrode 30 to etch the workpiece 200 to be etched and to form the etched workpiece 200a; wherein, plasma 70 includes a non-sheath region 71, a first sheath region 72 and a second sheath region 73, and in the Z-axis direction (i.e. the first direction), the first electrode 20, the first sheath region 72, the non-sheath region 71, the second sheath region 73 and the second electrode 30 are arranged in sequence, and the insulating member 40 makes the workpiece 200 to be etched located in the non-sheath region 71.

[0111] Specifically, a processing gas is introduced through the air inlet 14, and the receiving cavity 11 contains the processing gas. For example, the processing gas may be, but is not limited to, a fluorine-containing gas (e.g., sulfur hexafluoride, nitrogen trifluoride, or carbon tetrafluoride) or a chlorine-containing gas (e.g., chlorine or boron trichloride). The radio frequency power supply 50 outputs radio frequency current to the first electrode 20 through the capacitor 60, thereby forming an electric field between the first electrode 20 and the second electrode 30 to ionize the processing gas and generate plasma 70. The particles in the non-sheath region 71 of the plasma 70 chemically react with the etchable layer 202 of the workpiece 200 to etch the workpiece 200 and form an etched workpiece 200a. During the etching process of the workpiece 200 and the formation of the etched workpiece 200a, the etchable layer 202 generates waste gas, which is discharged from the receiving cavity 11 through the air outlet 15.

[0112] like Figure 11 and Figure 13As shown, the etched part 200a includes a main body 201 and an etched layer 203. The etched layer 203 includes a fourth part 2031, a fifth part 2032, and a sixth part 2033. The fourth part 2031 is plate-shaped. The fifth part 2032 is annular. The sixth part 2033 is annular. The fifth part 2032 surrounds the outside of the fourth part 2031. The sixth part 2033 surrounds the outside of the fifth part 2032. In the Z-axis direction, the sixth part 2033 is opposite to and spaced apart from the fourth part 2031. In the Z-axis direction, the fourth part 2031 covers the side of the bottom wall 2013a facing away from the second surface 2012, and covers a portion of the bottom wall 2013a. In the Z-axis direction, the fifth part 2032 covers the side of the bottom wall 2013a facing away from the second surface 2012, and covers another portion of the bottom wall 2013a. Furthermore, the fifth part 2032 completely covers the side wall 2013b. In the Z-axis direction, the sixth part 2033 covers the side of the first surface 2011 facing away from the second surface 2012, the sixth part 2033 completely covers the first surface 2011, and the sixth part 2033 surrounds the groove 2013.

[0113] In this embodiment, the thickness dimensions L2 of the fourth part 2031, M2 of the fifth part 2032, and N2 of the sixth part 2033 are equal. In other embodiments, they may not be equal. The thickness dimensions L2 of the fourth part 2031, M2 of the fifth part 2032, and N2 of the sixth part 2033 can be measured using a scanning electron microscope or a transmission electron microscope, or by optical or probe methods. The thickness dimension L2 of the fourth part 2031 of the etched layer 203 is smaller than the thickness dimension L1 of the first part 2021 of the layer to be etched 202. The thickness dimension M2 of the fifth part 2032 of the etched layer 203 is smaller than the thickness dimension M1 of the second part 2022 of the layer to be etched 202. The thickness dimension N2 of the sixth part 2033 of the etched layer 203 is smaller than the thickness dimension N1 of the third part 2023 of the layer to be etched 202.

[0114] The etching rate of the workpiece 200 in each direction during the etching process can be calculated using the following formula.

[0115]

[0116] Wherein, V1 is the etching rate (i.e., the first etching rate) of the first part 2021 of the workpiece 200 in the Z-axis direction (i.e., the first direction), L1 is the thickness of the first part 2021 of the workpiece 200, and L1 is the thickness of the fourth part 2031 of the workpiece 200a.

[0117] V2 is the etching rate (i.e., the second etching rate) of the second part 2022 of the workpiece 200 in the X-axis direction (i.e., the second direction), M1 is the thickness of the second part 2022 of the workpiece 200, and M2 is the thickness of the fifth part 2032 of the workpiece 200a.

[0118] V3 is the etching rate (i.e., the third etching rate) of the third part 2023 of the workpiece 200 in the Z-axis direction (i.e., the first direction), N1 is the thickness of the third part 2023 of the workpiece 200, and N2 is the thickness of the sixth part 2033 of the workpiece 200a. T is the etching time.

[0119] Based on the calculation results, the difference between the second etching rate V2 and the first etching rate V1, and the ratio of the second etching rate V2 to the first etching rate V1, are less than or equal to 30%. Similarly, the difference between the second etching rate V2 and the third etching rate V3, and the ratio of the third etching rate V3, are less than or equal to 30%. Therefore, the etching apparatus 100 provided in this embodiment (e.g., ...) Figure 1 (as shown) and etching method 500 (e.g.) Figure 10 As shown, the etching of part 200 is isotropic.

[0120] In the etching method 500 provided in this application embodiment, the workpiece 200 to be etched is located in the non-sheath region 71 of the plasma 70 through the insulating member 40. The particles in the non-sheath region 71 react chemically with the workpiece 200 to achieve etching. Since there is an electric field between the first electrode 20 and the second electrode 30, the electric field is weaker in the non-sheath region 71 and stronger in the first sheath region 72 and the second sheath region 73. The charged particles in the first sheath region 72 and the second sheath region 73 will accelerate along the Z-axis direction (i.e., the first direction) under the action of the electric field.

[0121] Compared to existing technologies, the design of placing the workpiece 200 to be etched 70 within the non-sheath region 71 of the plasma 70 via the insulating component 40 ensures that the etching of the workpiece 200 is achieved solely through particles in the non-sheath region 71. This avoids the situation where particles from the first sheath region 72 and the second sheath region 73 bombard the workpiece 200 along the Z-axis direction (i.e., the first direction), thus preventing a faster etching rate in the Z-axis direction (i.e., the first direction). This helps to reduce the directionality of the etching, achieving isotropic etching of the workpiece 200 and broadening the control over the etching morphology. Moreover, this design has a wide range of applications and strong versatility, and can be flexibly applied to the isotropic etching of various workpieces 200.

[0122] Please see Figure 14 , Figure 14This is a schematic diagram of the structure of a method for verifying that the etching of the workpiece 200 is isotropic, provided in an embodiment of this application, using an etching apparatus 100.

[0123] This application also provides a method for verifying that the etching of the workpiece 200 by the etching apparatus 100 is isotropic etching. The method includes:

[0124] S50. An etching apparatus 100 and a plurality of parts to be etched 200 are provided; wherein the plurality of parts to be etched 200 include a first part to be etched 200b, a second part to be etched 200c, a third part to be etched 200d and a fourth part to be etched 200e.

[0125] For example, the structure of the etching apparatus 100 can be referred to Figure 1 The relevant descriptions of the illustrated embodiment will not be repeated. The etching apparatus 100 includes a housing 10, a first electrode 20, a second electrode 30, an insulating component 40, an RF power supply 50, and a capacitor 60. The housing 10 includes a receiving cavity 11. Specifically, the housing 10 includes a first housing 12 and a second housing 13. The first housing 12 includes the receiving cavity 11, which extends along the Z-axis and has an opening. The second housing 13 is detachably connected to the first housing 12, and covers and seals the opening of the receiving cavity 11. The housing 10 is provided with an air inlet 14 and an air outlet 15.

[0126] Each part 200 to be etched includes a body 201 and an etchable layer 202. In the thickness direction of the part 200 to be etched, the etchable layer 202 covers one side of the body 201. Figure 14 The structure of the part to be etched 200 shown is similar to Figure 1 The structures of the parts to be etched 200 shown are similar, the difference being that... Figure 14 The main body 201 of the part to be etched 200 shown does not have grooves 2013, and the layer to be etched 202 is flat.

[0127] For example, the body 201 is made of materials including, but not limited to, silicon oxide or silicon nitride. The etchable layer 202 is made of materials including, but not limited to, molybdenum, copper, or other materials. The etchable layer 202 is deposited on one side of the body 201 by means including, but not limited to, physical vapor deposition. The thickness of the etchable layer 202 of each part 200 is obtained by scanning electron microscopy or transmission electron microscopy. The thickness of the etchable layer 202 of each part 200 is also obtained by optical or probe measurement.

[0128] S60. Mount the first etchable part 200b and the second etchable part 200c onto the insulating part 40, such that the thickness direction of the first etchable part 200b is parallel to the Z-axis direction, and the thickness direction of the second etchable part 200c is perpendicular to the Z-axis direction; mount the third etchable part 200d and the fourth etchable part 200e onto the side of the first electrode 20 facing the second electrode 30, such that the thickness direction of the third etchable part 200d is parallel to the Z-axis direction, and the thickness direction of the fourth etchable part 200e is perpendicular to the Z-axis direction.

[0129] Specifically, the connection between the first housing 12 and the second housing 13 is disconnected, exposing the opening of the receiving cavity 11 to the external environment. The second housing 13 is then mounted on the first housing 12, covering the opening of the receiving cavity 11 and sealing it. In the Z-axis direction, both the first part to be etched 200b and the second part to be etched 200c are mounted on the side of the insulating member 40 facing away from the first electrode 20; wherein, in the Z-axis direction, the main body 201 of the first part to be etched 200b is in contact with the insulating member 40, and the etchable layer 202 of the first part to be etched 200b covers the side of the main body 201 facing away from the insulating member 40. The main body 201 and the etchable layer 202 of the second part to be etched 200c are both in contact with the insulating member 40. In the X-axis direction, the etchable layer 202 of the second part to be etched 200c covers one side of the main body 201 of the second part to be etched 200c.

[0130] In the Z-axis direction, both the third etchable component 200d and the fourth etchable component 200e are mounted on the side of the first electrode 20 facing the second electrode 30. In the X-axis direction, the third etchable component 200d and the fourth etchable component 200e are located on one side of the insulating component 40. Specifically, in the Z-axis direction, the main body 201 of the third etchable component 200d is in contact with the insulating component 40, and the etchable layer 202 of the third etchable component 200d covers the side of the main body 201 facing away from the insulating component 40. Both the main body 201 and the etchable layer 202 of the fourth etchable component 200e are in contact with the insulating component 40. In the X-axis direction, the etchable layer 202 of the fourth etchable component 200e covers one side of the main body 201 of the fourth etchable component 200e. The second housing 13 is mounted on the first housing 12, such that the second housing 13 covers the opening of the receiving cavity 11 and closes the receiving cavity 11.

[0131] S70, plasma 70 is generated between the first electrode 20 and the second electrode 30 to etch each workpiece 200; wherein, plasma 70 includes a non-sheath region 71, a first sheath region 72 and a second sheath region 73, and in the Z-axis direction (i.e. the first direction), the first electrode 20, the first sheath region 72, the non-sheath region 71, the second sheath region 73 and the second electrode 30 are arranged in sequence, and the insulating member 40 makes the first workpiece 200b and the second workpiece 200c located in the non-sheath region 71, and the third workpiece 200d and the fourth workpiece 200e located in the first sheath region 72.

[0132] Specifically, a processing gas is introduced through the air inlet 14, and the receiving cavity 11 contains the processing gas. For example, the processing gas may be, but is not limited to, a fluorine-containing gas (e.g., sulfur hexafluoride, nitrogen trifluoride, or carbon tetrafluoride) or a chlorine-containing gas (e.g., chlorine or boron trichloride). The radio frequency power supply 50 outputs radio frequency current to the first electrode 20 through the capacitor 60, thereby forming an electric field between the first electrode 20 and the second electrode 30 to excite the processing gas to ionize and generate plasma 70. Particles in the non-sheath region 71 of the plasma 70 chemically react with the etchable layer 202 of the first etchable component 200b to etch the first etchable component 200b. Particles in the non-sheath region 71 of the plasma 70 chemically react with the etchable layer 202 of the second etchable component 200c to etch the second etchable component 200c. Particles from the first sheath region 72 of plasma 70 bombard the etchable layer 202 of the third etchable component 200d to etch it. Particles from the first sheath region 72 of plasma 70 bombard the etchable layer 202 of the fourth etchable component 200e to etch it. During the etching process of each etchable component 200, waste gas is generated in the etchable layer 202, and the waste gas is discharged from the vent 15 into the receiving cavity 11.

[0133] The thickness of the etchable layer 202 of each part 200 after etching is obtained using scanning electron microscopy or transmission electron microscopy. Thus, the thickness of the etchable layer 202 of each part 200 before and after etching can be obtained using scanning electron microscopy or transmission electron microscopy. The etching rate of the etchable layer 202 along the Z-axis for the first part 200b, the etching rate of the etchable layer 202 along the X-axis for the second part 200c, the etching rate of the etchable layer 202 along the Z-axis for the third part 200d, and the etching rate of the etchable layer 202 along the X-axis for the fourth part 200e are then calculated. For details, please refer to the relevant explanations above; further elaboration is unnecessary.

[0134] Comparing the calculation results, it can be found that the difference between the etching rate of the first etchable component 200b's etched layer 202 along the Z-axis and the etching rate of the second etchable component 200c's etched layer 202 along the X-axis, and the ratio of this difference to the etching rate of the first etchable component 200b's etched layer 202 along the Z-axis, is less than or equal to 30%. The etching rate of the third etchable component 200d's etched layer 202 along the Z-axis is greater than the etching rate of the fourth etchable component 200e's etched layer 202 along the X-axis. Therefore, the etching of the etchable component 200 mounted on the insulating component 40 is isotropic, while the etching of the etchable component 200 mounted on the first electrode 20 is anisotropic. This verifies that isotropic etching of the etchable component 200 can be achieved through the insulating component 40.

[0135] The thickness of the etchable layer 202 of each etchable component 200 after etching is obtained through optical or probe measurements. Thus, the thickness of the etchable layer 202 of each etchable component 200 before and after etching can be obtained through optical or probe measurements. The etching rate of the etchable layer 202 along the Z-axis for the first etchable component 200b, the etching rate of the etchable layer 202 along the X-axis for the second etchable component 200c, the etching rate of the etchable layer 202 along the Z-axis for the third etchable component 200d, and the etching rate of the etchable layer 202 along the X-axis for the fourth etchable component 200e are then calculated. For details, please refer to the relevant explanations above; further elaboration is unnecessary. The calculation results show that the etching of the workpiece 200 mounted on the insulating component 40 is isotropic, while the etching of the workpiece 200 mounted on the first electrode 20 is anisotropic. This also verifies that isotropic etching of the workpiece 200 can be achieved through the insulating component 40, and the verification results are valid and reliable.

[0136] The verification method provided in this application embodiment requires only one etching operation to verify that the isotropic etching of the workpiece 200 to be etched can be achieved through the insulating component 40, which simplifies the verification process and facilitates rapid testing. Moreover, the workpiece 200 to be etched for verification has a simple structure, is easy to manufacture, and helps reduce verification costs.

Claims

1. An etching apparatus for etching a workpiece, characterized in that, The etching apparatus includes: a housing, a first electrode, a second electrode, and an insulating component; the housing includes a receiving cavity, in which the first electrode, the second electrode, and the insulating component are all received; in a first direction, the second electrode is opposite to and spaced apart from the first electrode; the insulating component is disposed between the first electrode and the second electrode; the workpiece to be etched is mounted on the insulating component; the first direction is the thickness direction of the etching apparatus. Plasma can be generated between the first electrode and the second electrode. The plasma includes a non-sheath region, a first sheath region, and a second sheath region. In the first direction, the first electrode, the first sheath region, the non-sheath region, the second sheath region, and the second electrode are arranged in sequence. The insulating member ensures that the part to be etched is located in the non-sheath region.

2. The etching apparatus according to claim 1, characterized in that, In the first direction, the insulating member is in contact with the first electrode. The dimension of the insulating member in the first direction is greater than the dimension of the first sheath region in the first direction, and less than the sum of the dimensions of the non-sheath region in the first direction and the dimensions of the first sheath region in the first direction. The part to be etched is mounted on the side of the insulating member facing away from the first electrode.

3. The etching apparatus according to claim 2, characterized in that, The part to be etched is in contact with the insulating part, and the sum of the dimension of the insulating part in the first direction and the dimension of the part to be etched in the first direction is smaller than the sum of the dimension of the non-sheath region in the first direction and the dimension of the first sheath region in the first direction.

4. The etching apparatus according to claim 2, characterized in that, The area of ​​the insulating component projected in the first direction is smaller than the area of ​​the component to be etched projected in the first direction.

5. The etching apparatus according to claim 2, characterized in that, The projection of the part to be etched in the first direction lies within the projection of the insulating part in the first direction.

6. The etching apparatus according to claim 2, characterized in that, The insulating component is made of a thermally conductive and insulating material.

7. The etching apparatus according to claim 1, characterized in that, The insulating member is fixedly connected to the cavity wall of the receiving cavity. In the first direction, the insulating member is spaced apart from the first electrode and the second electrode. The insulating member is located in the non-sheath region. In the first direction, the part to be etched is mounted on one side of the insulating member. The sum of the dimensions of the insulating member in the first direction and the dimensions of the part to be etched in the first direction is smaller than the dimensions of the non-sheath region in the first direction.

8. The etching apparatus according to claim 1, characterized in that, In the first direction, the insulating member abuts between the first electrode and the second electrode; in the second direction, the part to be etched is fixedly connected to one side of the insulating member; the second direction is perpendicular to the first direction.

9. The etching apparatus according to any one of claims 1 to 8, characterized in that, The area of ​​the insulating element projected in the first direction is smaller than the area of ​​the first electrode projected in the first direction, and smaller than the area of ​​the second electrode projected in the first direction.

10. The etching apparatus according to any one of claims 1 to 8, characterized in that, The containment cavity contains the processing gas, and the etching apparatus further includes at least one radio frequency power source, the first electrode being electrically connected to at least one of the radio frequency power sources, and / or the second electrode being electrically connected to at least one of the radio frequency power sources; The radio frequency power supply is used to form an electric field between the first electrode and the second electrode to excite the processing gas to ionize and generate the plasma.

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