Infrared detector chipset film coating clamp and film coating method

Abstract

The invention discloses an infrared detector chipset film coating clamp and a film coating method, the clamp comprises a base and cover plates, the base is provided with a plurality of fixing assemblies, each fixing assembly is provided with one cover plate, each fixing assembly comprises a first groove and a second groove, the first groove is used for placing a chipset, and the second groove is used for placing the chipset. The second grooves are symmetrically arranged at the two ends of the diagonal line of the first groove, and the second grooves and the first groove are partially overlapped, so that the two ends of the diagonal line of the chipset extend into the second grooves. The vacuum pumping mode is adopted to enable the interior of the coating cavity to be in a negative pressure state, then the chip is fixed to the clamp, screw positioning and other operations are not needed, the process efficiency is remarkably improved, and cost reduction is facilitated.

Description

Technical Field

[0001] This invention relates to the field of infrared detector chip technology, and in particular to an infrared detector chip assembly coating fixture and coating method. Background Technology

[0002] Anti-reflection coatings on infrared detector chips are used to increase the transmittance of infrared light in the target wavelength band. Currently, the mainstream infrared thin film processes include physical vapor deposition (PVD), chemical vapor deposition (CVD), and atomic layer deposition (ALD).

[0003] Physical vapor deposition (PVD) is a physical method used under vacuum conditions to vaporize the surface of a solid or liquid material into gaseous atoms, molecules, or partially ionized ions, and then deposit a thin film with a specific function on the substrate surface through a low-pressure gas (or plasma) process.

[0004] Chemical vapor deposition (CVD) utilizes gaseous precursor reactants to decompose certain components in the gaseous precursor through intermolecular chemical reactions, thereby forming a thin film on the substrate.

[0005] Atomic layer deposition (ALD) is a high-precision thin film deposition technology based on chemical vapor deposition (CVD). It is a technique that deposits materials as single-atom films onto the surface of a substrate layer by layer based on chemical vapor deposition.

[0006] During coating, a coating fixture is needed to fix the chip to ensure coating quality. CN209665165U discloses a surface coating fixture device for an infrared detector. This type of fixture mainly uses screws to fix the chip, but this fixing method and processing technology have low production efficiency and are not suitable for mass production. Summary of the Invention

[0007] To address the aforementioned issues, this invention provides an infrared detector chip group coating fixture and coating method. By evacuating the coating chamber and using gravity to press the chip onto the fixture, the chip is fixed in place without the need for screw positioning, significantly improving process efficiency and reducing costs.

[0008] An infrared detector chipset coating fixture includes a base and a cover plate. The base is provided with a plurality of fixing components, each fixing component having a cover plate attached. Each fixing component includes:

[0009] The first groove is used to place the chipset, and the cover is used to cover the readout circuit pads of the chipset.

[0010] The second groove is symmetrically arranged at both ends of the diagonal of the first groove, and the second groove partially overlaps with the first groove, so that both ends of the diagonal of the chip group and the cover plate extend into the second groove and are in a suspended state.

[0011] The depth of the second groove is greater than the depth of the first groove.

[0012] Furthermore, the second groove partially overlaps with the first groove, such that one side intersects the first groove, and this side is perpendicular to the diagonal of the first groove.

[0013] Furthermore, the distance from the side where the second groove intersects the first groove to the diagonal vertex of the nearest first groove is 2-3 mm.

[0014] Furthermore, the thickness of the cover is less than 0.2 mm.

[0015] According to a second aspect, the present invention also provides a coating method for an infrared detector chipset, comprising:

[0016] Step S1: Place the chip assembly on the coating fixture inside the coating chamber and evacuate the coating chamber; the coating fixture is the infrared detector chip assembly coating fixture according to any one of claims 1-4;

[0017] Step S2: Perform CVD coating on the infrared detector chipset using coating gas and preset coating parameters;

[0018] Step S3: After the coating chamber cools down to the predetermined temperature, the coated infrared detector chip and cover are clamped out from the second groove at the opposite corner.

[0019] Furthermore, in step S2, the coating material includes silicon dioxide or silicon nitride with an infrared transmission window of 0.14-5 μm.

[0020] This invention enables the synchronous fixing of multiple chip groups through vacuuming. Its working principle is as follows:

[0021] The first groove restricts the horizontal movement of the chipset. When no vacuum is applied, the cover plate is pressed against the chipset by gravity. At the same time, the two opposite corners of the cover plate and the chipset are locked by the overlapping part of the first and second grooves, achieving precise positioning.

[0022] After vacuuming, the air in the first groove and between the cover and the chipset is sucked away. There is no airflow disturbance in the chamber and no other external interference, thus providing an interference-free environment for the cover and the chipset. At this time, the cover and the chipset are only subject to gravity. The cover is pressed vertically by its own gravity, pressing the chipset tightly.

[0023] The beneficial effects of this invention are:

[0024] 1. This invention does not require the use of screws or other fixing devices, is simple to operate, and can achieve synchronous fixing of multiple chip groups by vacuuming, which improves the efficiency of chip surface coating and is more suitable for mass industrial production.

[0025] 2. The second groove is set diagonally, which facilitates the placement and removal of chips and covers, and improves the efficiency of chip and cover placement. Attached Figure Description

[0026] Figure 1 This is a schematic diagram of the infrared detector chip group coating fixture in Example 1;

[0027] Figure 2 This is a schematic diagram of the fixing component in Example 1;

[0028] Figure 3 This is an exploded view of the fixing component in Example 1;

[0029] Figure 4 This is a top view of the fixing component in Example 1.

[0030] Figure label:

[0031] 1-Base; 2-First groove; 3-Second groove; 4-Cover plate; 5-Chipset. Detailed Implementation

[0032] The present invention will be further described in detail below through specific embodiments.

[0033] Example 1

[0034] like Figure 1-4 As shown, this embodiment discloses an infrared detector chipset coating fixture, including a base 1 and several fixing components disposed on the base 1. Each fixing component includes: a first groove 2, a second groove 3, and a cover plate 4. The first groove 2 is made according to the size of the chipset 5 and is generally rectangular. There is a gap of about 0.1mm between the edge of the first groove 2 and the edge of the cover plate 4. The cover plate 4 covers the chipset 5 and is used to shield the readout circuit pads of the chipset 5. The material of the cover plate 4 includes, but is not limited to, metals such as molybdenum and stainless steel, and its thickness is less than 0.2mm.

[0035] The second groove 3 is located on both sides of the diagonal of the first groove 2. The side where the second groove 3 intersects with the first groove 2 is perpendicular to the diagonal of the first groove 2. The distance 'a' between the side where the second groove 3 intersects with the first groove 2 and the vertex of the diagonal of the first groove 2 is 2-3 mm. At the same time, the second groove 3 is slightly deeper than the first groove 2 so that the two symmetrical corners of the chip assembly 5 are suspended in the air, so that the chip assembly 5 and the cover plate 4 can be put in and taken out. In addition, during the vacuuming process, even slight movement of the chip assembly 5 and the cover plate 4 will not cause damage, which can effectively protect the chip assembly 5 and the cover plate 4.

[0036] The specific coating method is as follows:

[0037] Step S1: Place the chip assembly 5 on the first groove 2, then cover it with the cover plate 4, and then evacuate the coating chamber.

[0038] Step S2: Perform back-side anti-reflection CVD coating on the infrared detector chipset using the coating gas and preset coating parameters. The coating materials include silicon dioxide and silicon nitride with infrared transmission windows of 0.14-5μm. The coating parameters include: the working pressure of the coating chamber, the coating heating temperature on the fixture, the coating power, and the flow rate of the gas used for coating.

[0039] Step S3: After the coating chamber cools down to the predetermined temperature, the coated infrared detector chip group 5 and cover plate 4 are clamped out from the second groove 5 at the opposite corner.

[0040] The above examples illustrate the present invention only to aid in understanding it and are not intended to limit the scope of the invention. Those skilled in the art can make various simple deductions, modifications, or substitutions based on the principles of this invention.

Claims

1. An infrared detector chipset coating fixture, comprising a base and a cover plate, characterized in that, The base is provided with a plurality of fixing components, each fixing component having a cover plate, the fixing components comprising: The first groove is used to place the chipset, and the cover is used to cover the readout circuit pads of the chipset. The second groove is symmetrically arranged at both ends of the diagonal of the first groove, and the second groove partially overlaps with the first groove, so that both ends of the diagonal of the chip group and the cover plate extend into the second groove and are in a suspended state. The depth of the second groove is greater than the depth of the first groove.

2. The infrared detector chipset coating fixture as described in claim 1, characterized in that, The second groove partially overlaps with the first groove, such that one side intersects the first groove, and this side is perpendicular to the diagonal of the first groove.

3. The infrared detector chipset coating fixture as described in claim 2, characterized in that, The distance from the side where the second groove intersects the first groove to the diagonal vertex of the nearest first groove is 2-3 mm.

4. The infrared detector chipset coating fixture as described in claim 1, characterized in that, The cover plate is made of materials including molybdenum or stainless steel.

5. The infrared detector chipset coating fixture as described in claim 1, characterized in that, The thickness of the cover is less than 0.2 mm.

6. A method for coating an infrared detector chipset using an infrared detector chipset coating fixture according to any one of claims 1-5, characterized in that, include: Step S1: Place the chip assembly on the coating fixture inside the coating chamber and evacuate the coating chamber; the coating fixture is the infrared detector chip assembly coating fixture according to any one of claims 1-4; Step S2: Perform CVD coating on the infrared detector chipset using coating gas and preset coating parameters; Step S3: After the coating chamber cools down to the predetermined temperature, the coated infrared detector chip and cover are clamped out from the second groove at the opposite corner.

7. The method as described in claim 6, characterized in that, In step S2, the coating material includes silicon dioxide or silicon nitride with an infrared transmission window of 0.14-5 μm.

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