Vacuum processing apparatus and vacuum processing method

Abstract

The purpose of the present invention is to provide a technique with which it is possible to improve the accuracy of gas flow measurement by an accumulation method. Therefore, this vacuum processing apparatus is provided with: a processing chamber capable of decompressing the inside thereof; a first flow rate control unit that controls the flow rate of the first process gas and supplies the first process gas to the process chamber; a second flow rate control unit that controls the flow rate of the second process gas and supplies the second process gas to the process chamber; a pressure measurement unit that measures the internal pressure of the processing chamber; and an index calculation unit that calculates an index based on a pressure measurement unit output, which is an output from the pressure measurement unit. The index calculation unit calculates a relative index based on the ratio of first pressure information, which is output by the pressure measurement unit when the first process gas is supplied to the process chamber, and second pressure information, which is output by the pressure measurement unit when the second process gas is supplied to the process chamber, and changes the setting of the first flow rate control unit and / or the second flow rate control unit on the basis of the relative index. Or, whether the first flow rate control unit and / or the second flow rate control unit needs to be replaced is presented.

Description

Technical Field

[0001] This disclosure relates to vacuum processing apparatus and vacuum processing methods. Background Technology

[0002] In the mass production of semiconductor devices, the traditional process involves placing a substrate-shaped sample, such as a semiconductor wafer, in a processing chamber inside a depressurized vacuum chamber, and then performing a given process, such as etching, using plasma formed within that chamber. As semiconductor device circuits have become increasingly miniaturized in recent years, the required processing precision for plasma-based processes, such as etching, is shifting from the nm level to the Å level. With this miniaturization, the control of processing conditions also becomes more precise; for example, the flow management of process gases used in etching requires high-precision control.

[0003] As described in Patent Document 1, for example, if gas flow rate is used as one of the control parameters, the gas flow rate supplied to the chamber is measured when a gas detector is provided in the semiconductor manufacturing apparatus. However, many semiconductor manufacturing apparatuses do not have gas detectors, and installing a gas detector requires a large investment. Patent Document 1 discloses the following as an invention of a flow measurement method and a flow control method, with the subject matter of "improving the accuracy of gas flow measurement based on the accumulation method". "A flow measurement method is provided, comprising: a step of supplying gas output from a flow controller to a chamber via a gas supply unit; a step of closing an exhaust valve of the chamber after the flow rate supplied to the chamber has stabilized; a step of measuring the pressure of the chamber and the pressure between the flow controller and the gas supply unit after closing the exhaust valve; a step of correcting the pressure of the chamber for the pressure loss per volume of the chamber based on the measured pressure of the chamber and the pressure difference between the flow controller and the gas supply unit; and a step of calculating the gas flow rate based on the corrected pressure rise rate of the chamber and the volume of the chamber."

[0004] Furthermore, Patent Document 2 proposes a method for determining whether gas flow rate is correctly controlled when using the build-up method. For example, Patent Document 2 discloses the following as an invention of a calibration method for a flow controller for a gas supply device and a flow measurement method, with the subject being "providing a flow calibration method for a flow controller based on the build-up (or ROR) method that can be performed more quickly and with higher accuracy through a miniaturized calibration unit." "The calibration unit 5, consisting of the accumulation tank BT, on / off valves V1 and V2, temperature detector Pd, and pressure detector Td, is branched and connected to the gas supply line L. The on / off valve V2 is connected to the vacuum exhaust device. First, the on / off valves Vo1 to Von of each flow controller and the on / off valve V0 of the gas usage part are closed, and the on / off valves V2 and V1 are opened. Next, only the on / off valve of the flow controller to be calibrated is opened, so that the gas with the set flow rate flows into the calibration unit 5. At time t0, the gas temperature and gas pressure in the tank are measured. Then, the on / off valve V2 is closed to accumulate gas in the tank BT. At time t1, the on / off valve V1 is closed, and at time t2, the gas temperature and gas pressure are measured. The gas flow rate Q is calculated based on the measured values. The flow rate is calibrated by comparing the set gas flow rate with the calculated gas flow rate Q." In gas flow measurement based on the accumulation method, the pressure in the chamber where a given flow rate of gas is introduced is measured, and the slope of the pressure rise is measured to determine whether the flow rate of gas supplied to the chamber is being properly controlled.

[0005] Prior art literature

[0006] Patent documents

[0007] Patent Document 1: Japanese Patent Application Publication No. 2018-116583

[0008] Patent Document 2: Japanese Patent Application Publication No. 2012-32983 Summary of the Invention

[0009] The problem that the invention aims to solve

[0010] It is known that the required accuracy of process gas flow management is increasing, and on the other hand, the accuracy of mass flow controllers (MFCs) that measure the pressure of process gases (the difference between the set flow rate and the actual flow rate) deteriorates over time. The accuracy of the mass flow controller can sometimes be affected when the pressure in the chamber is measured using an accumulation method, but this issue has not been adequately addressed in Patent Documents 1 and 2.

[0011] Therefore, the objective of this invention is to provide a technique that can improve the accuracy of gas flow measurement based on the accumulation method.

[0012] Methods for solving problems

[0013] To address the aforementioned issues, one representative vacuum processing apparatus of the present invention is characterized by comprising: a processing chamber capable of depressurizing its interior; a first flow control unit supplying a first processing gas to the processing chamber at a controlled flow rate; a second flow control unit supplying a second processing gas to the processing chamber at a controlled flow rate; a pressure measuring unit measuring the internal pressure of the processing chamber; and an index calculation unit calculating an index based on the output of the pressure measuring unit, wherein the index calculation unit performs the following processing: calculating a relative index based on the ratio of the pressure measuring unit output (i.e., first pressure information) when the first processing gas is supplied to the processing chamber to the pressure measuring unit output (i.e., second pressure information) to the pressure measuring unit output (i.e., second pressure information) when the second processing gas is supplied to the processing chamber; and, based on the relative index, changing the settings of the first flow control unit and / or the second flow control unit, or indicating whether the replacement of the first flow control unit and / or the second flow control unit is necessary.

[0014] Invention Effects

[0015] According to this disclosure, the accuracy of gas flow measurement based on the accumulation method can be improved.

[0016] Other issues, structures, and effects not mentioned above will be clarified in the description of the manner in which the invention is carried out below. Attached Figure Description

[0017] Figure 1 This is a diagram illustrating a structural example of a plasma processing apparatus (vacuum processing apparatus) according to an embodiment of the present disclosure.

[0018] Figure 2 This is a graph showing the time response of the output of the pressure measuring unit according to an embodiment of the present disclosure.

[0019] Figure 3 It is a graph showing the changes in the number of measurements of the standardized relative indicators involved in the embodiments of this disclosure.

[0020] Figure 4 This is a diagram illustrating the standardized relative index measurement process involved in the embodiments of this disclosure.

[0021] Figure 5 This shows the pressure-time variation data P. N2 An example diagram.

[0022] Figure 6 This shows the pressure-time variation data P. N2 Time differential dP N2 A graph of an example of / dt data.

[0023] Figure 7 This is a diagram illustrating the standardized relative index measurement process involved in the embodiments of this disclosure.

[0024] Figure 8 This is a diagram showing the relationship between the set flow rate and the measured flow rate of the flow control unit involved in the embodiments of this disclosure.

[0025] Figure 9 This is a diagram illustrating the anomaly determination process of the flow control unit that serves as a reference in the embodiments of this disclosure.

[0026] Figure 10 This is a diagram illustrating the anomaly determination process of the flow control unit that serves as a reference in the embodiments of this disclosure.

[0027] Figure 11 This is a diagram illustrating the reliability determination process of standardized relative indicators involved in the embodiments of this disclosure. Detailed Implementation

[0028] In the following embodiments, for convenience, they are divided into multiple parts or embodiments for description when necessary. However, unless otherwise explicitly stated, they are not unrelated to each other, and one is a variation, detail, supplementary description, etc., of the other.

[0029] Furthermore, in the following embodiments, when referring to the quantity of elements (including number, value, quantity, range, etc.), it is not limited to that specific quantity, except in cases where it is specifically stated or in cases where it is obviously limited to a specific quantity in principle. It can be more than a specific quantity or less than a specific quantity.

[0030] Furthermore, in the following embodiments, the constituent elements (including element steps, etc.) are not necessarily essential, except where specifically stated or where they are obviously considered necessary in principle.

[0031] Similarly, in the following embodiments, when referring to the shape, positional relationship, etc., of constituent elements, etc., it is assumed to include shapes that are substantially similar to or analogous to that shape, except where specifically stated or where it is obviously not so in principle. The same applies to the values ​​and ranges mentioned above.

[0032] Furthermore, in all the figures used to illustrate the embodiments, the same reference numerals are used to label the same components in principle, and repeated descriptions are omitted. Hereinafter, embodiments of the present invention will be described using the accompanying drawings.

[0033] Furthermore, in this disclosure, the term "above" refers to the vertical direction upward when the object is placed in its usual orientation. The term "upper part" refers to the component or portion located at the top. Additionally, "below" refers to the direction opposite to "up," and the term "lower part" refers to the component or portion located at the bottom.

[0034] <Example 1>

[0035] Figure 1 This is a diagram illustrating a structural example of a plasma processing apparatus (vacuum processing apparatus) according to an embodiment of the present invention. Details will be described later, but... Figure 1 The portion of the plasma processing apparatus 100 related to the processing chamber 110 is schematically shown in a longitudinal sectional view. The plasma processing apparatus 100 is the part that performs plasma processing on the sample, and is connected to a gas supply unit (first gas supply unit 3011 and second gas supply unit 3012) and a gas exhaust unit (exhaust unit 305). Furthermore, regarding the gas supply unit, generally speaking, when using n types of gas (n being an integer of 2 or more) in the plasma processing apparatus 100, the first gas supply unit 3011 to the nth gas supply unit 301 are used. n Regarding the flow control unit of the plasma processing apparatus 100, the first flow control unit 3021 is connected to the first gas supply unit 3011, and the i-th flow control unit 302... i Gas supply unit 301 (where i is an integer greater than or equal to 1 and less than or equal to n) i Connections. In Embodiment 1, the following situation is described: The first gas supply unit 3011 and the second gas supply unit 3012 are mainly used as the gas supply system. Furthermore, the first flow control unit 3021 is connected to the first gas supply unit 3011, and the second flow control unit 3022 is connected to the second gas supply unit 3012. Additionally, regarding the gas supply unit and flow control unit, when it is not necessary to determine which gas is being processed, sometimes they are simply referred to as "gas supply unit" and "flow control unit." Furthermore, in... Figure 1 The illustration shows a configuration where the plasma processing apparatus 100, the gas supply unit, and the gas exhaust unit are separate entities; however, this disclosure is not limited to this configuration. Either the gas supply unit or the gas exhaust unit may be included within the plasma processing apparatus 100.

[0036] In this disclosure, the plasma processing apparatus 100 includes: a processing chamber 110 capable of depressurizing its interior; a first flow control unit 3021 that supplies a first processing gas to the processing chamber 110 at a controlled flow rate; a second flow control unit 3022 that supplies a second processing gas to the processing chamber 110 at a controlled flow rate; a pressure measuring unit 306 that measures the internal pressure of the processing chamber 110; and an index calculation unit 308 that calculates an index based on the output of the pressure measuring unit 306, i.e., the output of the pressure measuring unit. Furthermore, the plasma processing apparatus 100 includes: an exhaust mechanism (exhaust cover 161, cylinder 162, exhaust pump 170) for depressurizing the interior of the processing chamber 110, and an exhaust speed control unit (exhaust adjustment unit) 307 for controlling the exhaust flow rate of the processing chamber 110. Furthermore, the index calculation unit 308 calculates a relative index based on the ratio of the pressure measurement unit output (i.e., the first pressure information) when the first processing gas is supplied to the processing chamber 110 to the pressure measurement unit output (i.e., the second pressure information) when the second processing gas is supplied to the processing chamber 110. Based on the relative index, it changes the settings of the first flow control unit 3021 and / or the second flow control unit 3022, or indicates whether the replacement of the first flow control unit 3021 and / or the second flow control unit 3022 is necessary. This will be explained in detail below.

[0037] (Plasma processing equipment and structures related to gas exhaust)

[0038] The plasma processing apparatus 100 includes: a vacuum container comprising an upper container 130 and a lower container 150, a lower exhaust pump 170 connected thereto, a first high-frequency power supply 101 above, and a solenoid coil (hereinafter also simply referred to as "coil") 106. The upper container 130 and the lower container 150 have inner walls with a horizontal cross-sectional shape of circles. A cylindrical sample stage 140 is disposed in the center of each inner portion and held by a second sample stage base 145. The second sample stage base 145 is fixed to the vacuum container by a plurality of hollow support beams 206.

[0039] The outer walls of the upper container 130 and the lower container 150 form a vacuum partition. The hollow support beam 206 is arranged axially symmetrically along the central axis extending in the vertical direction of the sample stage 140 (the gas flow path shape is approximately coaxially symmetrical with respect to the central axis of the sample stage 140). The space communicating with the hollow support beam 206 and extending from the opening of the upper container 130 to the cylindrical cavity below the second sample stage base 145 has a path communicating with the external space of the plasma processing apparatus 100 and is set to atmospheric pressure. Gases (processing gases, particles in the plasma, reaction products) in the space of the sample stage 140 within the upper container 130 are exhausted through the space between the hollow support beams 206 via the lower container 150. Therefore, the circumferential flow of gas in the sample stage 140, on which the processed object (sample) i.e., the wafer 200 is placed, becomes uniform, enabling uniform processing of the wafer 200.

[0040] Furthermore, the upper container 130, lower container 150, and base plate 160 each have a flange. The upper container 130 and lower container 150 are fastened together by threads on their flanges, and the lower container 150 and base plate 160 are also fastened together by threads on their flanges. Inside the vacuum container, a processing chamber 110 is arranged, which is a cylindrical space into which gas is introduced and supplied with electric and magnetic fields to form plasma. Furthermore, the inner side of the components surrounding the processing chamber 110 and constituting the container has a cylindrical shape, but regarding the shape of the outer wall, the horizontal cross-sectional shape is not limited to circular; it can also be rectangular or other shapes.

[0041] Above the processing chamber 110, a circular plate-shaped cover member 102 constituting a vacuum container and a circular plate-shaped shower head plate 103 constituting the top surface of the processing chamber 110 are disposed below it. These cover members 102 and shower head plates 103 are dielectric components such as quartz. For example, the cover member 102 may also be a quartz plate. Therefore, these components are configured to transmit high-frequency electric fields such as microwaves, UHF, and VHF waves, and the electric field from the first high-frequency power supply 101 disposed above is supplied to the interior of the processing chamber 110 through them. In addition, on the outer periphery of the outer sidewall of the vacuum container, a cylindrical coil 106 is disposed surrounding the outer sidewall and functions as a magnetic field forming unit, configured so that the generated magnetic field can be supplied to the interior of the processing chamber 110.

[0042] The cluster plate 103 is provided with multiple through holes, i.e., inlet holes for the processing gas, through which the processing gas is supplied to the interior of the processing chamber 110. Multiple inlet holes of the cluster plate 103 are arranged in an axially symmetrical region above the sample stage 140, i.e., above the sample placement surface, and about the central axis of the sample stage 140. Processing gas with a given composition and consisting of different gas components is introduced into the processing chamber 110 through the equally arranged inlet holes.

[0043] Electromagnetic waves and magnetic fields generated by a first high-frequency power supply 101 (as an electric field forming unit) and a coil 106 (as a magnetic field forming unit) are supplied into the processing chamber 110, thereby exciting the processing gas introduced into the processing chamber 110. This causes plasma to be generated in the space above the sample stage 140, which forms the upper part of the processing chamber 110 (discharge section). The space where plasma is formed is surrounded by a discharge section chamber 124, and a heater is installed on the outer peripheral sidewall of the discharge section chamber 124. The heater receives power and command signals from a temperature controller containing an electrically connected power supply, adjusting the heater's output or heat generation. This structure allows for heating of the quartz inner cylinder 105 disposed on the inner peripheral sidewall of the discharge section chamber 124. The quartz inner cylinder 105 is configured to contact the plasma formed inside the quartz inner cylinder 105. This structure reduces the adhesion of reaction products to the surface of the component facing the plasma in the discharge section containing the quartz inner cylinder 105.

[0044] The central axis of the sample stage 140, on which the wafer 200 is mounted, is configured to coincide with the central axis of the cluster plate 103 inside the processing chamber 110. The plasma-treated sample is the wafer 200, which is placed on a circular mounting surface that serves as the upper surface of the sample stage 140 and held by electrostatic adsorption (electrostatic chuck) through a dielectric film constituting the mounting surface. The surface of the wafer 200 is processed while it is held on the mounting surface.

[0045] A second high-frequency power supply 148, serving as a high-frequency bias power supply, is connected to electrodes disposed inside the sample stage 140. The supplied high-frequency power creates a high-frequency bias voltage over the sample stage 140 and the wafer 200 mounted thereon. Etching is performed on the surface of the wafer 200 using a physical reaction and a chemical reaction between the free radicals and the wafer surface. This physical reaction is caused by the high-frequency bias voltage inducing charged particles from the plasma to collide with the surface of the wafer 200. Furthermore, the temperature of the sample stage 140 can be controlled to a desired temperature using a temperature controller.

[0046] The application of a high-frequency bias voltage to the sample stage 140 and the temperature control of the sample stage 140 are performed via power supply wiring, temperature control wiring, or refrigerant piping routed within the cavity formed by the hollow support beam 206 and the second sample stage base 145. Furthermore, in addition to the aforementioned wiring, the cavity may also contain a temperature sensor and an electrostatic chuck wiring.

[0047] Below the processing chamber 110, a base plate 160 with an exhaust opening and an exhaust pump 170 are disposed. The exhaust pump 170 is connected to the bottom of the processing chamber 110 via the exhaust opening of the base plate 160. The exhaust opening provided in the base plate 160 is disposed directly below the sample stage 140. An exhaust cover 161 having a generally circular plate shape is disposed on the exhaust opening. A cylinder 162 for moving the exhaust cover 161 vertically is connected to the exhaust cover 161, and the exhaust flow can be adjusted by moving the exhaust cover 161 vertically using the cylinder 162. The amount and speed of gas, plasma, and products discharged from inside the processing chamber 110 to the outside of the processing chamber 110 are regulated by the exhaust cover 161 and the exhaust pump 170.

[0048] The exhaust cover 161 is opened during wafer processing 200. Simultaneously with the supply of processing gas, the pressure inside the processing chamber 110 is maintained at a desired vacuum level by balancing the operation of exhaust units such as the exhaust pump 170. Specifically, the pressure inside the processing chamber 110 during the etching process is monitored by the pressure measuring unit 306, and the opening degree of the exhaust cover 161 is controlled by the exhaust speed control unit 307, thereby controlling the pressure inside the processing chamber 110 to the desired level. Furthermore, the pressure inside the processing chamber 110 measured by the pressure measuring unit 306 is also sent to the index calculation unit 308.

[0049] The index calculation unit 308 has the function of calculating a given index and controlling the first flow control unit 3021 and the second flow control unit 3022 based on the calculated index. The index calculation unit 308 may also be configured, for example, by a control device having a memory and a processor. The memory contains processing commands that cause the processor to execute a given process. By executing the processing commands, the processor can perform processes such as changing the settings of the first flow control unit 3021 and the second flow control unit 3022, and index calculation. Furthermore, the index calculation unit 308 may also have an input / output device for user prompt information of the plasma processing device 100. The processing of the index calculation unit 308 will be described later.

[0050] The exhaust pump 170 is, for example, a turbomolecular pump, and is connected to the exhaust section 305 of a rotary pump or the like present in the building where the plasma processing unit 100 is installed. Furthermore, the exhaust section cover 161 is configured such that, when closed, the exhaust pump 170 can be vacuum-sealed by an O-ring. For convenience, the exhaust section cover 161, cylinder 162, exhaust pump 170, and exhaust section 305 are also referred to as the exhaust mechanism.

[0051] Although not illustrated, a gate is provided on the outer wall of the upper container 130 as an opening connecting the inside and outside of the vacuum container. A transport robot passes through this gate to place the wafer 200 onto the sample stage 140. In addition, during plasma processing, this opening is vacuum-sealed by a gate valve, and the vacuum seal is only released when transporting the wafer 200.

[0052] (Structures related to gas supply)

[0053] For the processing gases used in plasma processing, a single type of gas is used depending on each condition of the process, or a gas is used that is a mixture of multiple types of gases at an optimal flow rate ratio. The gas is supplied to the plasma processing apparatus 100 from the first gas supply unit 3011 and the second gas supply unit 3012, and the flow rate of each gas is regulated by the first flow control unit 3021 and the second flow control unit 3022, respectively. The first flow control unit 3021 and the second flow control unit 3022 are, for example, control valves, and the gas flow rate is controlled by adjusting the valve opening. The gases with adjusted flow rates are introduced through gas piping into the gas retention space between the shower plate 103 and the cover member 102 above the processing chamber 110 in the upper part of the vacuum container, where they are mixed and supplied to the processing chamber 110.

[0054] The index measurement method (relative accumulation method) for detecting flow abnormalities in the first flow control unit 3021 and the second flow control unit 3022 in this embodiment in the plasma processing apparatus described above will be described.

[0055] (Accumulation method based on past examples)

[0056] First, for comparison, the case of applying a conventional accumulation method to the plasma processing apparatus 100 will be explained. In the conventional accumulation method, after the exhaust pump 170 and the like have brought the processing chamber 110 to a near-vacuum state, the exhaust cover 161 is closed. Next, a certain flow rate of gas is filled into the processing chamber 110 via either the first flow control unit 3021 or the second flow control unit 3022. If the moment t at which the gas begins to flow is set to 0, the pressure P, which is the output of the pressure measuring unit 306, is shown. Figure 2 The response shown is as described. Figure 2 This is a diagram showing the time response of the output of the pressure measuring unit 306 according to an embodiment of the present disclosure. At this time, if the actual flow rate of the gas supplied to the processing chamber 110 is set as Q, and the volume of the processing chamber 110 is set as V, then the relationship of mathematical formula (1) holds.

[0057] [Mathematical Expression 1]

[0058]

[0059] If we differentiate and rearrange both sides of mathematical expression (1) using time t, we get mathematical expression (2), which can estimate the actual flow rate Q based on the response of pressure P.

[0060] [Mathematical Expression 2]

[0061]

[0062] However, in reality, there are many factors that can cause errors, and it is difficult to accurately measure the actual flow rate Q. For example, in an ideal gas, the pressure P, volume V, temperature T, mass n, and gas constant R0 have a mathematical relationship as shown in formula (3).

[0063] [Mathematical Expression 3]

[0064]

[0065] In reality, influenced by factors such as temperature deviation from the baseline state, annual variations, and volume deviation caused by mechanical differences, as shown by P' in mathematical formula (4), the pressure deviates from the baseline pressure P by k. T / k V Times. Here, the temperature deviation component is set as k. T Set the volume deviation component as k V .

[0066] [Mathematical Expression 4]

[0067]

[0068] As a result, the measured flow rate Q' is represented by mathematical formula (5), which deviates from mathematical formula (2).

[0069] [Mathematical Expression 5]

[0070]

[0071] These effects can be mitigated by strictly managing the temperature during measurement, but because it takes time to reach temperature equilibrium, measurements cannot be taken in a short period of time during etching, which reduces the operating rate of the plasma processing unit.

[0072] (The relative accumulation method disclosed herein)

[0073] Therefore, it is considered to continuously measure the two gases using an accumulation method and compare the measurement results. The time required for one accumulation method (accumulation of one gas) is approximately a few seconds to tens of seconds, during which time the temperature inside the processing chamber 110 can be considered to remain unchanged. Furthermore, since the measurement is continuous, even if a volume deviation is assumed, the volume V in the two accumulation methods can be considered the same. As an example, let the gas controlled by the first flow control unit 3021 be nitrogen (N2), and the gas controlled by the second flow control unit 3022 be argon (Ar). Then, let the pressure measurement results of nitrogen and argon based on the accumulation method be P. N2 '、P Ar ', then E serves as the relative index of the time derivative ratio of its pressure. Ar / N2 It is shown by mathematical expression (6).

[0074] [Mathematical Expression 6]

[0075]

[0076] Thus, k is the pressure deviation component. V / k T When measuring nitrogen and argon, they can be considered approximately the same, thus canceling each other out, serving as a relative indicator E. Ar / N2 It can calculate the actual flow rate ratio Q, which is unaffected by temperature or volume deviations. Ar / Q N2 This is the basic idea behind the relative accumulation method. Furthermore, the mass flow controllers (MFCs) typically used as the first flow control unit 3021 and the second flow control unit 3022 are generally calibrated with nitrogen. Therefore, this explanation uses nitrogen as the measurement reference and argon as the measurement object. However, it is not limited to this; stable rare gases such as argon can also be used as the reference gas. Since this method is a relative indicator, it is possible to consider various gases.

[0077] Furthermore, this method does not calculate the absolute flow rate, but only the flow ratio; however, the method for calculating the absolute flow rate will be explained here. In recent years, the accuracy of MFCs has been high, and it can be assumed that sufficient accuracy is ensured at the time of manufacture. That is, the relative index E can be considered accurate when the measurement is performed for the first time in the plasma processing apparatus 100. Ar / N2 That is, the initial relative index measurement result E Ar / N2 (0) is consistent with the ratio of the argon to nitrogen flow rate setpoints. Q is shown here. Ar (0) is the argon flow rate setpoint, and Q is also... N2 (0) indicates the nitrogen flow rate setpoint.

[0078] [Mathematical Expression 7]

[0079]

[0080] Using the initial relative index measurement result E Ar / N2 (0) The standardized relative index ε after τ measurements Ar / N2 Defined as mathematical expression (8).

[0081] [Mathematical Expression 8]

[0082]

[0083] The standardized relative index ε of mathematical formula (8) is always calculated. Ar / N2 (τ), after confirming that there were no abnormalities in the MFC using nitrogen as the reference gas, Q N2 (0) and Q N2 (τ) Without change, as shown in mathematical formula (9), the set flow rate of argon MFC is compared with the standardized relative index ε. Ar / N2 By multiplying (τ), the actual flow rate Q of argon can be calculated. Ar (τ).

[0084] [Mathematical Expression 9]

[0085]

[0086] Furthermore, by using the standardized relative index ε of mathematical formula (8) Ar / N2 (τ) can also standardize the anomaly detection of flow control units for different types of gases. Figure 3 This illustrates the standardized relative index ε as described in the embodiments of this disclosure. Ar / N2 A graph showing the corresponding changes in the number of measurements of (τ). For example, as... Figure 3 As shown, the standardized relative index ε is captured by each measurement number τ. Ar / N2 (τ) shows a continuous deviation from its initial value of 1, enabling the detection of long-term changes and anomalies in the first flow control unit 3021 and / or the second flow control unit 3022. More specifically, when τ exceeds the anomaly detection threshold Th, [the following is applied to τ]. Th If an anomaly is detected, the system can replace the first flow control unit 3021 or the second flow control unit 3022, or correct the flow rate. For example, the index calculation unit 308 can calculate the flow rate based on the standardized relative index ε. Ar / N2 The user of the plasma processing device 100 may be prompted to change the settings of the first flow control unit 3021 and / or the second flow control unit 3022, or to indicate whether the replacement of the first flow control unit 3021 and / or the second flow control unit 3022 is necessary.

[0087] (Measurement Processing)

[0088] Next, use Figure 4 This concludes the explanation of the measurement process based on the relative accumulation method. Figure 4 This is a diagram illustrating the standardized relative index measurement process involved in the embodiments of this disclosure.

[0089] In steps 401 and 402, after the pressure measurement unit reduces the pressure in the processing chamber 110 via the exhaust mechanism, it measures pressure information while the processing chamber 110 is sealed by the exhaust speed control unit 307. Specifically, in step 401, the exhaust cover 161 is opened, the exhaust pump 170 and the like are activated, and after the processing chamber 110 is brought to a near-vacuum state, the exhaust cover 161 is closed, and nitrogen supplied by the first gas supply unit 3011 is introduced at a flow rate Q set by the first flow control unit 3021. N2 The fluid is continuously filled into the processing chamber 110. The pressure during this series of actions is measured at a constant cycle in the pressure measuring unit 306, and this pressure is recorded as pressure-time variation data P. N2 (Hereinafter referred to as "First Pressure Information") is saved. Additionally, this pressure-time variation data P is also saved. N2 Typically, this is a list of pressure values ​​at each moment, i.e., vector data. If represented by a chart, it becomes... Figure 5 That way. Figure 5 This shows the pressure-time variation data P. N2 The figure shows an example. As in this example, the pressure response is mostly non-linear during the initial gas filling phase, which will reduce the accuracy of this measurement. Therefore, the pressure-time variation data P... N2 For example, if we want to use the time t from which the response is considered linear. A At time t B The data up to this point.

[0090] Additionally, in step 402, the exhaust cover 161 is similarly opened to operate the exhaust pump 170, etc. After the processing chamber 110 is brought to a near-vacuum state, the exhaust cover 161 is closed, and the argon gas supplied by the second gas supply unit 3012 is introduced at a flow rate Q set by the second flow control unit 3022. Ar The fluid is continuously filled into the processing chamber 110. The pressure during this series of actions is measured at a constant time period in the pressure measuring unit 306, and this pressure-time variation data P is used as the data. Ar (Hereinafter referred to as "Second Pressure Information") is saved.

[0091] In step 403, the index calculation unit 308 performs differential calculations on the pressure-time variation data. Specifically, in step 403, the obtained pressure-time variation data P is... N2 P Ar Differentiating at time t (time differentiation) yields dP. N2 / dt、dP Ar Data in / dt. Figure 6 This shows the pressure-time variation data P. N2 Time differential dP N2 A graph of an example of / dt data. At time t A At time t B Within the range up to this point, constant data is obtained. Furthermore, regarding time dP... Ar / dt, also with dP N2 Similarly, the data for / dt at time t A At time t B The data obtained is constant. Furthermore, if the data is obtained at a constant period, the difference between adjacent data points can be used instead of performing time differentiation.

[0092] In step 404, the index calculation unit 308 performs an averaging operation on the data. Specifically, in step 404, the differential result of step S403 is averaged, thereby suppressing the noise of randomness contained in the data and improving the accuracy of the differential value. If expressed mathematically, the averaging operation is expressed as mathematical formulas (10) and (11).

[0093] [Mathematical Expression 10]

[0094]

[0095] [Mathematical Expression 11]

[0096]

[0097] In step S405, the index calculation unit calculates the relative indices of nitrogen and argon. Specifically, in step 405, the relative index E of nitrogen and argon is obtained by taking their ratio. Ar / N2 If expressed mathematically, it would be mathematical expression (12).

[0098] [Mathematical Expression 12]

[0099]

[0100] In step 406, the index calculation unit determines whether the relative index was calculated in the initial state of the first flow control unit 3021 and / or the second flow control unit 3022. Specifically, in step 406, it determines whether the measurement is the first time after the plasma processing device 100 is started, or whether it is the first time after the first flow control unit 3021 and / or the second flow control unit 3022 is replaced. If it is the first time in at least one of these cases, the relative index is saved (step 408). If it is not the first time in either case, the obtained relative index is standardized using the saved initial relative index (the relative index calculated in the initial state) to obtain the standardized relative index ε. Ar / N2 (Step 407).

[0101] Following the above measurement procedure, due to the differential processing in step 403, even if the output deviation of the pressure measuring unit 306 is not a problem, measurement can be achieved without being affected by zero-point adjustment accuracy. Furthermore, for the same reason, even if the data used in step 401 is within the time range t... A At time t B Even if the timing is off, it won't be a problem.

[0102] Furthermore, the pressure sensor, which serves as the pressure measuring unit 306, contains quantization noise, noise caused by the influence of surrounding machinery, and so on. Therefore, in order to improve the SNR of the data, it is desirable to perform measurement in step 401 until the maximum pressure level that can be measured by the pressure measuring unit 306 is reached.

[0103] By using the index based on the relative accumulation method described in the above embodiments, the flow rate changes caused by time variations and anomalies in the first flow control unit 3021 and the second flow control unit 3022 can be detected with high accuracy, regardless of temperature deviation, volume deviation, or offset of the pressure measuring unit 306. Since the measurement can be performed after eliminating variations generated in the flow control unit, the accuracy of gas flow rate measurement based on the accumulation method can be improved.

[0104] <Example 2>

[0105] In this embodiment, the correction method for the first flow control unit 3021 and the second flow control unit 3022 using the relative accumulation method described in Embodiment 1 will be explained. In Embodiment 2, the index calculation unit 308 calculates a relative index for each flow rate (set flow rate) set in the second flow control unit 3022. Based on the calculated multiple relative indices, the relationship between the flow rate set in the second flow control unit 3022 and the actual flow rate of the second processing gas supplied to the processing chamber 110 is derived. The setting of the second flow control unit 3022 is changed based on the derived relationship. In the following description, the same reference numerals are used for the same or equivalent components as those in Embodiment 1 described above, and their descriptions are simplified or omitted.

[0106] Figure 7 This is a diagram illustrating the standardized relative index measurement process involved in the embodiments of this disclosure. (Compared to Embodiment 1) Figure 4 The difference in the illustrated process is that multiple measurements are performed while changing the flow rates of the first flow control unit 3021 and the second flow control unit 3022. This is because the relationship between the set flow rate of the flow control unit and the actual flow rate may differ for each flow rate. Therefore, it is desirable to perform measurements and calibrations over the entire range of flow rates within which this relationship can be used. An example is given where the used flow rate range is divided into 10 parts for measurement at openings of 10%, 20%, ..., 100%. However, the number of divisions is not limited to 10. The number of divisions can be appropriately set; for example, increasing the number of divisions can further improve calibration accuracy, while decreasing the number of divisions can further shorten measurement time.

[0107] In step 701, the flow rate Q of the first flow control unit 3021 is set to an opening degree of 10%. N2 However, when nitrogen is set as the reference gas in the first flow control unit 3021, and the measurement object is the second flow control unit 3022, the opening degree of the first flow control unit 3021 does not necessarily need to be changed, and can always be set to the same opening degree of 100%. As a result, since a large flow rate can be measured, nitrogen measurement can be completed in a short time.

[0108] In step 401, the same process as step 401 in Example 1 is performed.

[0109] In step 702, the flow rate Q of the second flow control unit 3022 is set to an opening degree of 10%. Ar .

[0110] Steps 402 to 408 are performed in the same manner as steps S402 to S408 in Example 1.

[0111] In step 703, if the number of divisions for the opening is less than the set number, return to step 701, set steps 701 and 702 to an opening of 20%, then to 30%, and so on, and perform the processing from step 701 to step 408 until the set number of divisions is reached.

[0112] Through the above measurements, for example, we obtain Figure 8 The results are shown. Figure 8 This illustrates the set flow rate Q and measured flow rate Q of the flow control unit involved in the embodiments of this disclosure. m The graph shows the relationship between the set flow rate Q and the measured flow rate Q. m The following instructions apply to all types of gas; therefore, descriptions of gas types are omitted. Measuring flow rate Q m As shown in mathematical formula (9), it can be obtained by multiplying the set flow rate Q by the standardized relative index ε. Additionally, the measured flow rate Q... m It is vector data containing measurement data of a quantity with a set number of divisions. Figure 11 The middle part is indicated by a white circle.

[0113] Ideally, since the set flow rate Q and the measured flow rate Q m The same, therefore it should become Figure 11 The relationship is shown by the dashed line. However, in reality, the measured flow rate Q... m yes Figure 11 The data is shown as a solid line. Therefore, based on the measured flow rate Q... m It is approximately a polynomial like the mathematical formula (13). The coefficients α1, α2, α3, and α4 of this polynomial only need to be determined based on the measured flow rate Q. m The measurement data can be obtained using methods such as least squares.

[0114] [Mathematical Expression 13]

[0115]

[0116] When setting the set flow rate Q, substitute the set flow rate Q into mathematical formula (14) to calculate the estimated actual flow rate Q. m Divide the set flow rate Q by the estimated actual flow rate Q. m Therefore, the corrected set flow rate Q can be calculated. c .

[0117] [Mathematical Expression 14]

[0118]

[0119] The corrected set flow rate Q in each flow rate cIt can be registered as firmware for the first flow control unit 3021 and the second flow control unit 3022, and can be appropriately modified within the first flow control unit 3021 and the second flow control unit 3022. The flow rate Q can also be set through this modification. c The settings input to the first flow control unit 3021 and the second flow control unit 3022 are corrected and input.

[0120] Furthermore, the mathematical formula (13) is represented by a third-order polynomial, but it is not limited to this, as long as it can represent the measured flow rate Q with a small error. m This approach is sufficient. For example, if it's just an offset, a 0th-order polynomial can be used; if it deviates from the set flow rate by a constant factor, a 1st-order polynomial can be used. Lower-order polynomials reduce computational costs. Alternatively, exponential functions, logarithmic functions, etc., can be used instead of polynomials.

[0121] By using the correction method based on relative accumulation as described in the above embodiments, it is possible to detect changes in the flow control unit over time and changes in flow caused by abnormalities with high accuracy, regardless of temperature deviation, volume deviation, or offset of the pressure measuring unit, and to correct the actual flow of the flow control unit.

[0122] <Example 3>

[0123] In this embodiment, the anomaly detection method for the reference gas in the relative accumulation method described in Example 1 will be explained. In the following description, the same reference numerals are used for the same or equivalent components as those in Examples 1 and 2 described above, and their descriptions are simplified or omitted.

[0124] In Example 1, the time differential ratio is set as a relative index E. Ar / N2 Therefore, if the flow rate of the first flow control unit 3021 for nitrogen, which serves as the reference gas, deviates due to changes over time or abnormalities, the relative indicators will also deviate even if the second flow control unit 3022 for argon is normal. When only these two types of gases are used, it is difficult to determine which one is abnormal. However, since the plasma processing unit 100 uses many gases in each process, it typically has dozens of gas types, i.e., flow control units. Therefore, if the flow control unit for the reference gas is abnormal, all measured relative indicators will show the same deviation pattern, making it possible to determine the abnormality.

[0125] Therefore, use Figure 9 The process is described below: The correlation between the relative index data of the n flow control units installed in the plasma processing device 100 is calculated. If there are many strongly correlated relationships, the flow control unit of the reference gas is judged to be abnormal. Figure 9 This is a diagram illustrating the anomaly determination process of the flow control unit that serves as a reference in the embodiments of this disclosure.

[0126] In step 801, by Figure 4 Steps 401 to 408 of Embodiment 1, or Figure 7 The processing of steps 701 to 703 in Example 2 is used to measure the standardized relative index ε. i In addition, this standardized relative index ε i It is vector data containing measurement results of quantities from the past τ times, and is related to the i-th (i is an integer from 1 to n) flow measurement unit 302. i The relevant data can be expressed as a mathematical formula (15).

[0127] [Mathematical Expression 15]

[0128]

[0129] In step 802, it is determined whether all measurements of the n types of flow control units have been completed. Step 801 is performed while changing i until all measurements are completed. Furthermore, in this disclosure, it is assumed that the reference gas in step 801 is always nitrogen, which is the output of the first flow control unit 3021. The reference gas is not limited to nitrogen; other gases can also be set as the reference gas. The flow control unit can be appropriately selected based on the set reference gas.

[0130] In step 803, the standardized relative index ε measured in step 801 is... i The vector data elements are logarithmized as shown in equation (16). This is because relative indicators are the ratio of two measured data, so in order to find the correlation, it is better to express it in a linear combination, which can be expressed in a linear combination through logarithmization.

[0131] [Mathematical Expression 16]

[0132]

[0133] In step 804, the logarithmized vector data is smoothed to suppress the bias of each measurement.

[0134] In step 805, the correlation matrix R between the vector data of each flow control unit is calculated. First, as shown in mathematical formula (17), the correlation matrix R is calculated by dividing the covariance of the logarithmically standardized relative index by the standard deviation σ. i With σ j The value obtained by multiplying can be used to calculate the correlation coefficient ρ between the vector data of the i-th flow control unit and the j-th flow control unit (j is an integer from 1 to n) after logarithmic transformation. ijCalculate the correlation coefficient ρ among all n types of gas data. ij Thus, the n×n correlation matrix R shown in mathematical formula (18) is obtained.

[0135] [Mathematical Expression 17]

[0136]

[0137] [Mathematical Expression 18]

[0138]

[0139] In step 806, the number of elements in the correlation matrix R that exceed a preset correlation coefficient threshold is calculated, and it is determined whether this number of elements exceeds the preset threshold. If the threshold is not exceeded, it can be said that the correlation is relatively small among the deviation modes of each flow control unit, and therefore the first flow control unit 3021 for the reference gas (nitrogen in this case) can be judged to be within the normal range. On the other hand, if the threshold is exceeded, the correlation is relatively large among the deviation modes of each flow control unit, meaning that the deviation of the reference gas will affect other standardized relative indicators ε. i (i is 1 to n) This has an impact, and in this case, the processing in step 807 is performed.

[0140] In step 807, the vector data of the flow control unit that was determined to be highly relevant in step 806 is averaged for each element, and this average is used as the deviation of the first flow control unit 3021 of the reference gas. The deviation of each element is then divided by the entire standardized relative index ε. i The vector data (i is from 1 to n) is used for correction.

[0141] In step 808, for the corrected standardized relative index, it is determined whether it exceeds a preset judgment threshold. If it exceeds the threshold, it is judged as abnormal; if it does not exceed the threshold, it is judged as normal.

[0142] Furthermore, this example illustrates the corrected standardized relative index ε. i (i is 1 to n) is an example, but if the first flow control unit 3021 for the reference gas is determined to be abnormal in step 806, it is possible to replace the first flow control unit 3021. In addition, it is also possible to use an MFC or similar device that can self-diagnose abnormalities for only the first flow control unit 3021 for the reference gas, thereby improving reliability.

[0143] By using the anomaly detection and correction method of the first flow control unit 3021 of the reference gas in the relative accumulation method described in the above embodiments, it is possible to detect the time-related changes and flow rate changes caused by anomalies of the flow control unit with high accuracy, regardless of temperature deviation, volume deviation, or offset of the pressure measuring unit 306. For example, it is conceivable that the plasma processing apparatus 100, in addition to the first flow control unit 3021 and the second flow control unit 3022, also has a third flow control unit 3023 that sets the flow rate of the third processing gas and supplies it to the processing chamber 110. The index calculation unit 308 of the plasma processing apparatus 100 can calculate a first relative index based on the ratio of the first pressure information to the second pressure information, and calculate a second relative index based on the ratio of the third pressure information to the first pressure information, wherein the third pressure information is output by the pressure measurement unit when the third processing gas is supplied to the processing chamber 110. Based on the correlation coefficient between the first relative index and the second relative index, the setting of the first flow control unit 3021 is changed, or the user is prompted whether at least one of the first flow control unit 3021, the second flow control unit 3022, and the third flow control unit 3023 needs to be replaced.

[0144] <Example 4>

[0145] In this embodiment, a method for improving measurement accuracy and reliability in the relative accumulation method described in Example 2 will be explained. (The rest of the text will be discussed later.) Figure 10 In steps 901 and 902, after the pressure measuring unit 306 has repeatedly supplied the first processing gas and / or the second processing gas to the processing chamber 110 and exhausted the gas a given number of times, it measures the pressure information. In the following description, the same reference numerals are used for the same or equivalent components as those in Examples 1 to 3 described above, and their descriptions are simplified or omitted.

[0146] In Example 2 Figure 7 In the standardized relative index measurement process shown, when the given flow rate indexes of the first flow control unit 3021 and the second flow control unit 3022 are determined, only one accumulation measurement is performed for each. However, depending on the type of gas, this may not be sufficient. For example, in the case of easily liquefied gases such as SiCl4, the pressure during accumulation measurement may be lower than expected because gas molecules are adsorbed on the walls inside the processing chamber 110. Additionally, sometimes the pressure may be higher than expected because gas molecules adsorbed on the walls in previous measurements are released during the measurement. The influence of these pressure changes caused by the emitted gases also becomes a measurement error in the relative accumulation method, thus reducing measurement accuracy. This influence of emitted gases can be suppressed by fully filling the processing chamber 110 with the gas to be measured before measurement. Therefore, a method of performing measurements after pre-filling the processing chamber 110 multiple times will be explained.

[0147] Figure 10 This is a diagram illustrating the anomaly determination process of the flow control unit used as a reference in an embodiment of this disclosure. (Compared to Embodiment 2) Figure 7 The difference in the process shown is that multiple measurements are performed using the same gas.

[0148] Steps 701 and 401 are performed in accordance with Example 2. Figure 7 The same process applies to steps 701 and 401.

[0149] In step 901, it is determined whether the cumulative measurement of the first flow control unit 3021 has been performed a given number of times. The cumulative measurement is repeatedly performed in the pressure measurement unit 306 and the index calculation unit 308 until the given number of times is reached. In addition, the given number of times can be preset, or it can be determined by checking the linearity of the measured pressure change, or by whether the same pressure change is obtained.

[0150] Steps 702 and 402 are performed in accordance with Example 2. Figure 7 The same process applies to steps 702 and 402.

[0151] In step 902, it is determined whether the cumulative measurement for the second flow control unit 3022 has been performed a given number of times, and the cumulative measurement is repeated until the given number of times is reached.

[0152] Steps 403 to 408 are performed in accordance with Example 2. Figure 7 The same process applies to steps 403 to 408.

[0153] By using the index based on the relative accumulation method described in the above embodiments, it is possible to detect the time-related changes and flow rate changes caused by abnormalities of the flow control unit with high precision, without being affected by temperature deviation, volume deviation, or offset of the pressure measurement unit 306, and further reducing the impact of exhaust gas.

[0154] <Example 5>

[0155] In this embodiment, a method for improving reliability in the relative accumulation method described in Embodiment 1 will be explained. The index calculation unit 308 calculates a first relative index based on the ratio of a first pressure information to a second pressure information, and calculates a second relative index based on the ratio of a third pressure information to the second pressure information, wherein the third pressure information is the output of the pressure measurement unit when the first processing gas is supplied to the processing chamber 110 again. A determination is made as to whether the difference between the first relative index and the second relative index is within a given range. In the following description, the same reference numerals are used for components that are the same as or equivalent to those in Embodiment 1 described above, and their descriptions are simplified or omitted.

[0156] In Example 1, it was stated that "the temperature inside the processing chamber 110 can be considered to remain unchanged during this time" as a premise for the relative index to hold true. However, in actual plasma processing measurements based on the relative accumulation method, the temperature is strictly considered to change. By confirming whether it is within the permissible range, the reliability of the index can be ensured.

[0157] Figure 11 This is a diagram illustrating the reliability determination process of standardized relative indicators involved in the embodiments of this disclosure. (Compared to Embodiment 1) Figure 4 The difference in the process shown is that it adds an accumulation measurement based on a reference gas.

[0158] Step 1001 is the same as in Example 1. Figure 4 The processing corresponding to steps 401, 403, and 404 in the process involves accumulating measurements for the first flow control unit 3021.

[0159] Step 1002 is the same as in Example 1. Figure 4 The processing corresponding to steps 402, 403, and 404 in the process involves accumulating measurements for the second flow control unit 3022.

[0160] In step 1003, the first standardized relative index (first relative index) is calculated based on the data obtained from steps 1001 and 1002 above.

[0161] In step 1004, similar to step 1001, the accumulated measurement for the first flow control unit 3021 is performed again. The pressure measured by the pressure measuring unit 306 in step 1001 is the first pressure information, and the pressure measured by the pressure measuring unit 306 in step 1002 is the second pressure information. For convenience, the pressure measured by the pressure measuring unit 306 in step 1004 can be referred to as the third pressure information.

[0162] In step 1005, the second standardized relative index (the second relative index) is calculated based on the data obtained from steps 1004 and 1002 above.

[0163] In step 1006, the first standardized relative index obtained in step 1003 and the second standardized relative index obtained in step 1005 are compared. If the difference exceeds a given range, for example, if it is determined to be due to a sudden change in temperature, a remeasurement is performed. On the other hand, if the difference is within the given range, it is assumed that there is no sudden change in temperature.

[0164] Furthermore, while this description outlines step 1004, which involves performing an accumulation measurement of the reference gas for this deviation confirmation, this situation can also be accommodated since an accumulation measurement of the reference gas is required for the measurement of the next flow control unit or the next opening degree. That is, the deviation confirmation of this embodiment can be performed while sequentially measuring the first gas (reference gas) → the second gas (measurement object 1) → the first gas (reference gas) → the third gas (measurement object 2) → the first gas (reference gas) → ...

[0165] By using the index based on the relative accumulation method described in the above embodiments, it is possible to detect changes in the flow control unit over time and changes in flow rate caused by abnormalities without being affected by temperature deviation, volume deviation, or offset of the pressure measuring unit, and further, based on the confirmation that the temperature has not changed.

[0166] The embodiments of the present invention have been described above, but the present invention is not limited to the above embodiments, and various modifications can be made without departing from the spirit of the present invention.

[0167] The following description can be considered as part of the content of this invention, but is not limited thereto.

[0168] (Method 1)

[0169] A vacuum processing apparatus, characterized in that it comprises: a processing chamber capable of depressurizing its interior; a first flow control unit for supplying a first processing gas to the processing chamber at a controlled flow rate; a second flow control unit for supplying a second processing gas to the processing chamber at a controlled flow rate; a pressure measuring unit for measuring the internal pressure of the processing chamber; and an index calculation unit for calculating an index based on the output of the pressure measuring unit, wherein the index calculation unit performs the following processing: calculating a relative index based on the ratio of the pressure measuring unit output (i.e., first pressure information) when the first processing gas is supplied to the processing chamber to the pressure measuring unit output (i.e., second pressure information) when the second processing gas is supplied to the processing chamber; and, based on the relative index, changing the settings of the first flow control unit and / or the second flow control unit, or indicating whether the replacement of the first flow control unit and / or the second flow control unit is necessary.

[0170] (Method 2)

[0171] In the vacuum processing apparatus described in Method 1, the vacuum processing apparatus further includes: an exhaust mechanism for depressurizing the interior of the processing chamber; and an exhaust adjustment unit for controlling the exhaust flow rate of the processing chamber. The pressure measuring unit measures pressure information after the processing chamber is depressurized by the exhaust mechanism and the processing chamber is sealed by the exhaust adjustment unit.

[0172] (Method 3)

[0173] In the vacuum processing apparatus described in Method 1 or Method 2, the index calculation unit standardizes the relative index based on the relative index calculated in the initial state of the first flow control unit and / or the second flow control unit.

[0174] (Method 4)

[0175] In any of the vacuum processing apparatuses described in methods 1 to 3, the index calculation unit performs time differentiation on the first pressure information and the second pressure information.

[0176] (Method 5)

[0177] In any of the vacuum processing apparatuses described in Modes 1 to 4, the index calculation unit calculates a relative index for each flow rate set in the second flow control unit, and derives a relationship between the flow rate set in the second flow control unit and the actual flow rate of the second processing gas supplied to the processing chamber based on the calculated multiple relative indices, and changes the setting of the second flow control unit based on the derived relationship.

[0178] (Method 6)

[0179] In any one of the vacuum processing apparatuses of methods 1 to 5, the vacuum processing apparatus further comprises: a third flow control unit that sets a flow rate for a third processing gas and supplies it to the processing chamber; an index calculation unit that performs the following processing: calculates a first relative index based on the ratio of the first pressure information to the second pressure information; calculates a second relative index based on the ratio of the third pressure information to the first pressure information; the third pressure information is the output of the pressure measurement unit when the third processing gas is supplied to the processing chamber; and changes the setting of the first flow control unit based on the correlation coefficient between the first relative index and the second relative index, or prompts whether at least one of the first flow control unit, the second flow control unit, and the third flow control unit needs to be replaced.

[0180] (Method 7)

[0181] In any one of the vacuum processing apparatuses of embodiments 1 to 6, the vacuum processing apparatus includes: an exhaust mechanism for depressurizing the interior of the processing chamber; and an exhaust adjustment unit for controlling the exhaust flow rate of the processing chamber; wherein the pressure measuring unit measures pressure information after the first processing gas and / or the second processing gas have been supplied to the processing chamber and exhausted a given number of times.

[0182] (Method 8)

[0183] In any of the vacuum processing apparatuses described in methods 1 to 7, the index calculation unit performs the following processing: calculates a first relative index based on the ratio of the first pressure information to the second pressure information, calculates a second relative index based on the ratio of the third pressure information to the second pressure information, wherein the third pressure information is the output of the pressure measurement unit when the first processing gas is supplied to the processing chamber again, and determines whether the difference between the first relative index and the second relative index is within a given range.

[0184] (Method 9)

[0185] A vacuum processing method is provided in an apparatus comprising a processing chamber capable of depressurizing its interior, a first flow control unit supplying a first processing gas to the processing chamber at a controlled flow rate, and a second flow control unit supplying a second processing gas to the processing chamber at a controlled flow rate. The vacuum processing method is characterized by comprising: a pressure measurement step for measuring the internal pressure of the processing chamber; an index calculation step for calculating a relative index based on the ratio of the output of the pressure measurement step (i.e., first pressure information) when the first processing gas is supplied to the processing chamber to the output of the pressure measurement step (i.e., second pressure information) when the second processing gas is supplied to the processing chamber; and a change notification step for changing the settings of the first flow control unit and / or the second flow control unit based on the relative index, or for notifying whether replacement of the first flow control unit and / or the second flow control unit is necessary.

[0186] (Method 10)

[0187] In the vacuum processing method described in Method 9, the vacuum processing method includes: an exhaust step to depressurize the interior of the processing chamber; and an exhaust adjustment step to control the exhaust flow rate of the processing chamber. In the pressure measurement step, after depressurizing the processing chamber through the exhaust step, pressure information is measured while the processing chamber is sealed through the exhaust adjustment step.

[0188] (Method 11)

[0189] In the vacuum processing method described in mode 9 or mode 10, in the index calculation step, the relative index is standardized based on the relative index calculated in the initial state of the first flow control unit and / or the second flow control unit.

[0190] (Method 12)

[0191] In any of the vacuum processing methods described in methods 9 to 11, in the index calculation step, the first pressure information and the second pressure information are differentiated over time.

[0192] (Method 13)

[0193] In any of the vacuum processing methods described in methods 9 to 12, in the index calculation step, a relative index is calculated for each flow rate set in the second flow control unit, and based on the calculated relative indexes, a relationship is derived between the flow rate set in the second flow control unit and the flow rate observed in the processing chamber, i.e., the actual flow rate. In the change prompt step, the setting of the second flow control unit is changed based on the derived relationship.

[0194] (Method 14)

[0195] In any one of the vacuum processing methods of methods 9 to 13, the apparatus further comprises: a third flow control unit that supplies a third processing gas to the processing chamber; in the index calculation step, calculating a first relative index based on the ratio of the first pressure information to the second pressure information, and calculating a second relative index based on the ratio of the third pressure information to the first pressure information, wherein the third pressure information is the output of the pressure measurement step when the third processing gas is supplied to the processing chamber; and in the change prompting step, changing the setting of the first flow control unit based on the correlation coefficient between the first relative index and the second relative index, or prompting whether at least one of the first flow control unit, the second flow control unit, and the third flow control unit needs to be replaced.

[0196] (Method 15)

[0197] In any one of the vacuum processing methods of methods 9 to 14, the vacuum processing method comprises: an exhaust step of depressurizing the interior of the processing chamber; and an exhaust adjustment step of controlling the exhaust flow rate of the processing chamber; and in the pressure measurement step, pressure information is measured after the first processing gas and / or the second processing gas have been supplied to the processing chamber and exhausted repeatedly for a given number of times.

[0198] (Method 16)

[0199] In any of the vacuum processing methods described in methods 9 to 15, in the index calculation step, a first relative index is calculated based on the ratio of the first pressure information to the second pressure information, and a second relative index is calculated based on the ratio of the third pressure information to the second pressure information, wherein the third pressure information is the output of the pressure measurement step when the first processing gas is supplied to the processing chamber again, and in the change prompting step, a determination is made as to whether the difference between the first relative index and the second relative index is within a given range.

[0200] -Explanation of Figure Markers-

[0201] 100: Plasma treatment device

[0202] 101: First High-Frequency Power Supply

[0203] 102: Cover component (quartz plate)

[0204] 103: Cluster Plate

[0205] 105: Quartz inner tube

[0206] 106: Solenoid coil

[0207] 110: Processing Room

[0208] 120: Discharge block

[0209] 124: Discharge chamber

[0210] 125: Grounding ring

[0211] 130: Upper container

[0212] 140: Sample Stage

[0213] 148: Second High-Frequency Power Supply

[0214] 150: Lower container

[0215] 160: Base plate

[0216] 161: Exhaust cover

[0217] 162: Cylinder

[0218] 170: Exhaust pump

[0219] 200: Chip

[0220] 206: Hollow Support Beam

[0221] 3011: First Gas Supply Department

[0222] 3021: First Flow Control Department

[0223] 3012: Second Gas Supply Department

[0224] 3022: Second Flow Control Department

[0225] 305: Exhaust Section

[0226] 306: Pressure Measurement Department

[0227] 307: Exhaust Speed ​​Control Unit

[0228] 308: Indicator Calculation Department.

Claims

1. A vacuum processing apparatus, characterized in that, have: The processing chamber is capable of depressurizing the internal pressure; The first flow control unit supplies the first processing gas to the processing chamber at a controlled flow rate. The second flow control unit supplies the second processing gas to the processing chamber at a controlled flow rate. The pressure measuring unit measures the internal pressure of the processing chamber; and The index calculation unit calculates the index based on the output of the pressure measurement unit, i.e., the index output by the pressure measurement unit. The indicator calculation unit performs the following processing: A relative index is calculated based on the ratio of the pressure measurement unit output (i.e., the first pressure information) when the first processing gas is supplied to the processing chamber to the pressure measurement unit output (i.e., the second pressure information) when the second processing gas is supplied to the processing chamber. Based on the relative indicators, the settings of the first flow control unit and / or the second flow control unit are changed, or the need to replace the first flow control unit and / or the second flow control unit is indicated.

2. The vacuum processing apparatus according to claim 1, wherein, The vacuum processing device also has: The exhaust mechanism depressurizes the interior of the processing chamber; and The exhaust adjustment unit controls the exhaust flow rate of the processing chamber. After the pressure in the processing chamber is reduced by the exhaust mechanism, the pressure measuring unit measures the pressure information while the processing chamber is sealed by the exhaust adjustment unit.

3. The vacuum processing apparatus according to claim 1, wherein, The index calculation unit standardizes the relative index based on the relative index calculated in the initial state of the first flow control unit and / or the second flow control unit.

4. The vacuum processing apparatus according to claim 1, wherein, The index calculation unit performs time differentiation on the first pressure information and the second pressure information.

5. The vacuum processing apparatus according to claim 1, wherein, The index calculation unit calculates a relative index for each flow rate set in the second flow control unit, and derives the relationship between the flow rate set in the second flow control unit and the actual flow rate of the second processing gas supplied to the processing chamber based on the calculated multiple relative indices. Based on the derived relationship, the setting of the second flow control unit is changed.

6. The vacuum processing apparatus according to claim 1, wherein, The vacuum processing apparatus further includes: a third flow control unit, which sets the flow rate of the third processing gas and supplies it to the processing chamber. The indicator calculation unit performs the following processing: Calculate a first relative index based on the ratio of the first pressure information to the second pressure information. A second relative index is calculated based on the ratio of the third pressure information to the first pressure information, wherein the third pressure information is the output of the pressure measuring unit when the third processing gas is supplied to the processing chamber. Based on the correlation coefficient between the first relative index and the second relative index, the setting of the first flow control unit is changed, or a prompt is made indicating whether at least one of the first flow control unit, the second flow control unit, and the third flow control unit needs to be replaced.

7. The vacuum processing apparatus according to claim 1, wherein, The vacuum processing device has the following features: The exhaust mechanism depressurizes the interior of the processing chamber; and The exhaust adjustment unit controls the exhaust flow rate of the processing chamber. The pressure measuring unit measures pressure information after repeatedly supplying the first processing gas and / or the second processing gas to the processing chamber and venting the gas a given number of times.

8. The vacuum processing apparatus according to claim 1, wherein, The indicator calculation unit performs the following processing: Calculate a first relative index based on the ratio of the first pressure information to the second pressure information. A second relative index is calculated based on the ratio of the third pressure information to the second pressure information, wherein the third pressure information is the output of the pressure measuring unit when the first processing gas is supplied to the processing chamber again. Determine whether the difference between the first relative indicator and the second relative indicator is within a given range.

9. A vacuum processing method comprising an apparatus including a processing chamber capable of depressurizing its interior, a first flow control unit for supplying a first processing gas to the processing chamber at a controlled flow rate, and a second flow control unit for supplying a second processing gas to the processing chamber at a controlled flow rate. The vacuum processing method is characterized by comprising: The pressure measurement step involves measuring the internal pressure of the processing chamber. The index calculation step calculates a relative index based on the ratio of the output of the pressure measurement step when the first processing gas is supplied to the processing chamber (i.e., the first pressure information) to the output of the pressure measurement step when the second processing gas is supplied to the processing chamber (i.e., the second pressure information); and The change prompt step, based on the relative index, changes the settings of the first flow control unit and / or the second flow control unit, or prompts whether the replacement of the first flow control unit and / or the second flow control unit is necessary.

10. The vacuum processing method according to claim 9, wherein, The vacuum processing method has the following characteristics: The exhaust step depressurizes the interior of the processing chamber; and The exhaust adjustment step controls the exhaust flow rate of the processing chamber. In the pressure measurement step, after the processing chamber is depressurized through the venting step, and the processing chamber is sealed through the venting adjustment step, pressure information is measured.

11. The vacuum processing method according to claim 9, wherein, In the index calculation step, the relative index is standardized based on the relative index calculated in the initial state of the first flow control unit and / or the second flow control unit.

12. The vacuum processing method according to claim 9, wherein, In the index calculation step, the first pressure information and the second pressure information are differentiated over time.

13. The vacuum processing method according to claim 9, wherein, In the index calculation step, a relative index is calculated for each flow rate set in the second flow control unit. Based on the calculated relative indexes, the relationship between the flow rate set in the second flow control unit and the flow rate observed in the processing chamber, i.e., the actual flow rate, is derived. In the change prompting step, the settings of the second flow control unit are changed based on the derived relationship.

14. The vacuum processing method according to claim 9, wherein, The device further includes: a third flow control unit for supplying a third processing gas to the processing chamber. In the step of calculating the index, Calculate a first relative index based on the ratio of the first pressure information to the second pressure information. A second relative index is calculated based on the ratio of the third pressure information to the first pressure information, wherein the third pressure information is the output of the pressure measurement step when the third processing gas is supplied to the processing chamber. In the change notification step, based on the correlation coefficient between the first relative indicator and the second relative indicator, the setting of the first flow control unit is changed, or a notification is sent indicating whether at least one of the first flow control unit, the second flow control unit, and the third flow control unit needs to be replaced.

15. The vacuum processing method according to claim 9, wherein, The vacuum processing method has the following characteristics: The exhaust step depressurizes the interior of the processing chamber; and The exhaust adjustment step controls the exhaust flow rate of the processing chamber. In the pressure measurement step, pressure information is measured after the first processing gas and / or the second processing gas are repeatedly supplied to the processing chamber and vented a given number of times.

16. The vacuum processing method according to claim 9, wherein, In the step of calculating the index, Calculate a first relative index based on the ratio of the first pressure information to the second pressure information. A second relative index is calculated based on the ratio of the third pressure information to the second pressure information, wherein the third pressure information is the output of the pressure measurement step when the first processing gas is supplied to the processing chamber again. In the change notification step, a determination is made as to whether the difference between the first relative indicator and the second relative indicator is within a given range.

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