Defect anchoring method in preparation of all-inorganic CsPbBr3 perovskite X-ray detector

Abstract

The invention discloses a defect anchoring method in preparation of a full-inorganic CsPbBr3 perovskite X-ray detector. The defect anchoring method comprises the following steps: S1, preparing CsPbBr3 powder; S2, preparing an organic solvent; S3, preparing precursor slurry; s4, conducting substrate surface treatment; S5, slurry blade coating; S6, annealing forming; and S7, device preparation. According to the defect anchoring method in the preparation of the full-inorganic CsPbBr3 perovskite X-ray detection device, the method is simple to operate, and ion migration can be inhibited by anchoring defects in a CsPbBr3 perovskite thick film, so that the low-noise and stable X-ray detection device is prepared.

Description

Technical Field

[0001] This invention relates to the field of X-ray detection technology, specifically to a defect anchoring method in the fabrication of an all-inorganic CsPbBr3 perovskite X-ray detector. Background Technology

[0002] Direct-conversion X-ray detectors have seen rapid development in recent years, especially perovskite direct-conversion X-ray detectors. Ion migration within the perovskite crystal is directly related to the stability of signal output and reception. Simultaneously, ion migration can lead to baseline drift, increased dark current, and crystal collapse during detection. Ion migration is even more severe in polycrystalline thick films. A powerful method to suppress ion migration is to anchor defects within the perovskite crystal.

[0003] Therefore, a defect anchoring method in the fabrication of an all-inorganic CsPbBr3 perovskite X-ray detector is of great significance for achieving high spatial resolution, low noise, and stable X-ray imaging. Summary of the Invention

[0004] The purpose of this section is to outline some aspects of the embodiments of the present invention and to briefly describe some preferred embodiments. Simplifications or omissions may be made in this section, as well as in the abstract and title of this application, to avoid obscuring the purpose of these documents; however, such simplifications or omissions should not be construed as limiting the scope of the invention.

[0005] 1. Technical problems to be solved:

[0006] To address the problems mentioned above, such as baseline drift, increased dark current, and crystal collapse caused by ion migration during detection, especially the more severe ion migration in polycrystalline thick films, this invention is proposed.

[0007] Therefore, the purpose of this invention is to provide a defect anchoring method in the fabrication of all-inorganic CsPbBr3 perovskite X-ray detectors, which can effectively achieve high spatial resolution, low noise, and stable X-ray imaging.

[0008] 2. Technical Solution:

[0009] To address the aforementioned technical problems, according to one aspect of the present invention, the present invention provides the following technical solution:

[0010] Includes the following steps:

[0011] S1. Preparation of CsPbBr3 powder;

[0012] S2. Prepare organic solvents;

[0013] S3. Preparation of precursor slurry;

[0014] S4. Surface treatment of conductive substrate;

[0015] S5. Slurry application;

[0016] S6, Annealing and shaping;

[0017] S7. Device fabrication.

[0018] As a preferred embodiment of the defect anchoring method in the preparation of an all-inorganic CsPbBr3 perovskite X-ray detector device according to the present invention, in step S1, the CsPbBr3 powder is prepared by ball milling lead bromide, cesium bromide, potassium bromide, and hydantoin (Hyd) in a molar ratio of 1:1:0.02:0.005 into a ball mill jar.

[0019] As a preferred embodiment of the defect anchoring method in the fabrication of an all-inorganic CsPbBr3 perovskite X-ray detector of the present invention, in step S1, the ball milling time of the ball milling jar is 4h to 5h, the ball milling jar is a nylon ball milling jar, and the interior of the ball milling jar contains ball milling beads made of zirconia balls.

[0020] As a preferred embodiment of the defect anchoring method in the fabrication of an all-inorganic CsPbBr3 perovskite X-ray detector device according to the present invention, in step S2, the organic solvent is obtained by mixing N,N-dimethylformamide, dimethyl sulfoxide, and ethylene glycol methyl ether in a volume ratio of 1:2:1.

[0021] As a preferred embodiment of the defect anchoring method in the fabrication of an all-inorganic CsPbBr3 perovskite X-ray detector device according to the present invention, in step S3, the precursor slurry is a cesium lead bromine precursor slurry, which is obtained by mixing CsPbBr3 powder with a solvent at a concentration of 3.45 M to 4.45 M and stirring thoroughly.

[0022] In a preferred embodiment of the defect anchoring method in the fabrication of an all-inorganic CsPbBr3 perovskite X-ray detector according to the present invention, in step S4, the conductive substrate is an ITO conductive substrate.

[0023] As a preferred embodiment of the defect anchoring method in the fabrication of an all-inorganic CsPbBr3 perovskite X-ray detector of the present invention, in step S4, the surface treatment method is to place the conductive substrate in an ultraviolet-ozone cleaning machine for 30 min to 45 min.

[0024] As a preferred embodiment of the defect anchoring method in the fabrication of an all-inorganic CsPbBr3 perovskite X-ray detector device of the present invention, the specific steps of the slurry coating are as follows: using tape to fix the ITO conductive substrate on a flat plate and cover a certain area of ​​conductive region, adjusting the thickness of the resulting thick film by adjusting the height of the scraper, taking an appropriate amount of slurry and pouring it onto the ITO conductive substrate, and starting the scraper.

[0025] As a preferred embodiment of the defect anchoring method in the fabrication of an all-inorganic CsPbBr3 perovskite X-ray detector device according to the present invention, in step S6, the annealing process involves placing a CsPbBr3 precursor thick film on a hot plate at 125°C to 165°C and heating it at a constant temperature for 12 to 15 hours to form a robust thick film, and then cooling it at a gradient of 10°C / h to 15°C / h.

[0026] As a preferred embodiment of the defect anchoring method in the fabrication of an all-inorganic CsPbBr3 perovskite X-ray detector of the present invention, in step S7, a 3×3mm Au electrode with a thickness of 80nm~95nm is deposited on a CsPbBr3 thick film as the top electrode, and the ITO vacancy is used as the bottom electrode. The X-ray detector is fabricated using an Au / perovskite / ITO / Au structure.

[0027] 3. Beneficial effects:

[0028] Compared with the prior art, the beneficial effects of the present invention are:

[0029] Defect anchoring method in the fabrication of this type of all-inorganic CsPbBr3 perovskite X-ray detector:

[0030] By adding hydantoin as an additive during the synthesis of cesium lead bromide powder, the defect-induced ion migration problem in cesium lead bromide perovskite was improved, significantly enhancing the stability of CsPbBr3 and increasing its crystallinity, thereby further reducing the defect density. Attached Figure Description

[0031] To more clearly illustrate the technical solutions of the embodiments of the present invention, the present invention will be described in detail below with reference to the accompanying drawings and detailed embodiments. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort. Wherein:

[0032] Figure 1The defect anchoring method in the fabrication of an all-inorganic CsPbBr3 perovskite X-ray detector of the present invention is shown in the X-ray response diagrams of Example 1 (CPB3-0.5%hyd), Comparative Example 1 (CPB3), Comparative Example 2 (CPB3-1.0%hyd), Comparative Example 3 (CPB3-1.5%hyd), and Comparative Example 4 (CPB3-2.0%hyd). Detailed Implementation

[0033] To make the above-mentioned objects, features and advantages of the present invention more apparent and understandable, the specific embodiments of the present invention will be described in detail below with reference to the accompanying drawings.

[0034] This invention is described in detail with reference to the schematic diagrams. When describing the embodiments of this invention, for ease of explanation, the cross-sectional views illustrating the device structure may be partially enlarged, not according to the usual scale. Furthermore, the schematic diagrams are merely examples and should not be construed as limiting the scope of protection of this invention. In actual fabrication, the three-dimensional spatial dimensions of length, width, and depth should be included.

[0035] The orientation or positional relationship indicated in the terminology is based on the orientation or positional relationship shown in the accompanying drawings and is only for the convenience of describing the invention and simplifying the description, and is not intended to indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of the invention.

[0036] The term "connection method" should be interpreted broadly. For example, "connection" can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium; it can be a connection within two components. Those skilled in the art can understand the specific meaning of the above terms in this invention according to the specific circumstances.

[0037] The embodiments of the present invention will now be described in further detail with reference to the accompanying drawings.

[0038] This invention provides an overall structural schematic diagram of an embodiment of a defect anchoring method in the fabrication of an all-inorganic CsPbBr3 perovskite X-ray detector, comprising:

[0039] Please see Figure 1 This embodiment of a defect anchoring method in the fabrication of an all-inorganic CsPbBr3 perovskite X-ray detector includes the following steps:

[0040] S1. Preparation of CsPbBr3 powder;

[0041] S2. Prepare organic solvents;

[0042] S3. Preparation of precursor slurry;

[0043] S4. Surface treatment of conductive substrate;

[0044] S5. Slurry application;

[0045] S6, Annealing and shaping;

[0046] S7. Device fabrication.

[0047] It is worth noting that, specifically in S1, the CsPbBr3 powder is prepared by adding lead bromide, cesium bromide, potassium bromide, and hydantoin (Hyd) in a molar ratio of 1:1:0.02:0.005 into a ball mill jar and then ball milling.

[0048] Next, specifically, in S1, the ball milling time of the ball milling jar is 4h to 5h, the ball milling jar is a nylon ball milling jar, and the inside of the ball milling jar contains grinding beads made of zirconia balls.

[0049] Specifically, in S2, the organic solvent is obtained by mixing N,N-dimethylformamide, dimethyl sulfoxide, and ethylene glycol methyl ether in a volume ratio of 1:2:1.

[0050] Furthermore, specifically, in S3, the precursor slurry is a cesium lead bromine precursor slurry, which is obtained by mixing CsPbBr3 powder with a solvent at a concentration of 3.45M to 4.45M and stirring thoroughly.

[0051] Specifically, in S4, the conductive substrate is an ITO conductive substrate.

[0052] Next, specifically in S4, the surface treatment method is to place the conductive substrate in an ultraviolet-ozone cleaner for 30 to 45 minutes.

[0053] Subsequently, specifically in S5, the specific steps for slurry coating are as follows: using tape to fix the ITO conductive substrate on the flat plate and cover a certain area of ​​conductive region, adjusting the thickness of the resulting thick film by adjusting the height of the squeegee, taking an appropriate amount of slurry and pouring it onto the ITO conductive substrate, and starting the squeegee.

[0054] Furthermore, specifically in S6, the annealing process involves placing the CsPbBr3 precursor thick film on a hot plate at 125℃~165℃ and heating it at a constant temperature for 12h~15h to form a robust thick film, and then cooling it down at a gradient of 10℃ / h~15℃ / h.

[0055] Finally, specifically, in S7, a 3×3mm Au electrode with a thickness of 80nm~95nm is deposited on a CsPbBr3 thick film as the top electrode, and the ITO vacancy is used as the bottom electrode. The X-ray detector device is fabricated using an Au / perovskite / ITO / Au structure.

[0056] Example 1:

[0057] This embodiment of an all-inorganic CsPbBr3 perovskite X-ray detector includes an ITO conductive substrate, a perovskite layer, a 9-grid metal electrode, and a back electrode segment metal electrode, employing an Au / perovskite / ITO / Au structure.

[0058] The fabrication method of the all-inorganic CsPbBr3 perovskite X-ray detector in this embodiment is as follows:

[0059] (1) Lead bromide, cesium bromide, potassium bromide and hydantoin (Hyd) were added to a ball mill jar in a molar ratio of 1:1:0.02:0.005 and ball milled for 4 hours to obtain CsPbBr3 powder.

[0060] (2) N,N-dimethylformamide, dimethyl sulfoxide and ethylene glycol methyl ether are mixed in a volume ratio of 1:2:1 to obtain a mixed organic solvent.

[0061] (3) The optimized CsPbBr3 powder and solvent are mixed at a concentration of 3.45 M and stirred thoroughly to obtain cesium lead bromine precursor slurry.

[0062] (4) Place the ITO conductive substrate in an ultraviolet-ozone cleaner for 30 minutes.

[0063] (5) Take an appropriate amount of slurry on the ITO conductive substrate, adjust the height of the scraper, start the scraper to complete the coating, and obtain a CsPbBr3 precursor thick film.

[0064] (6) The CsPbBr3 precursor thick film was placed on a hot plate at 125℃ and heated at a constant temperature for 12h to form a robust thick film, and then cooled at a gradient of 10℃ / h.

[0065] (7) A 9-grid metal electrode is deposited on the surface of the perovskite layer, and a back electrode section metal electrode is deposited in the back electrode area of ​​the ITO conductive substrate.

[0066] S1. Preparation of CsPbBr3 powder;

[0067] S2. Prepare organic solvents;

[0068] S3. Preparation of precursor slurry;

[0069] S4. Surface treatment of conductive substrate;

[0070] S5. Slurry application;

[0071] S6, Annealing and shaping;

[0072] S7, Device Fabrication

[0073] It is worth noting that, specifically in S1, the CsPbBr3 powder is obtained by ball milling lead bromide, cesium bromide, potassium bromide, and hydantoin (Hyd) in a molar ratio of 1:1:0.02:0.005.

[0074] Next, specifically, in S1, the ball milling time in the milling jar is 4 hours. The milling jar is made of nylon and contains milling beads made of zirconia balls inside.

[0075] Specifically, in S2, the organic solvent is obtained by mixing N,N-dimethylformamide, dimethyl sulfoxide, and ethylene glycol methyl ether in a volume ratio of 1:2:1.

[0076] Furthermore, specifically in S3, the precursor slurry is a cesium lead-bromine precursor slurry, which is obtained by mixing CsPbBr3 powder with a solvent at a concentration of 3.45 M and stirring thoroughly.

[0077] Specifically, in S4, the conductive substrate is an ITO conductive substrate.

[0078] Next, specifically in S4, the surface treatment method is to place the conductive substrate in an ultraviolet-ozone cleaner for 30 minutes.

[0079] Subsequently, specifically in S5, the specific steps for slurry coating are as follows: using tape to fix the ITO conductive substrate on the flat plate and cover a certain area of ​​conductive region, adjusting the thickness of the resulting thick film by adjusting the height of the squeegee, taking an appropriate amount of slurry and pouring it onto the ITO conductive substrate, and starting the squeegee.

[0080] Furthermore, specifically in S6, the annealing process involves placing the CsPbBr3 precursor thick film on a hot plate at 125°C and heating it at a constant temperature for 12 hours to form a robust thick film, followed by a temperature gradient of 10°C / hour.

[0081] Finally, specifically, in S7, a 3×3 mm Au electrode with a thickness of 80 nm is deposited on a CsPbBr3 thick film as the top electrode, and the ITO vacancy is used as the bottom electrode. The X-ray detector device is fabricated using an Au / perovskite / ITO / Au structure.

[0082] Comparative Example 1

[0083] This comparative example is an all-inorganic CsPbBr3 perovskite X-ray detector, the structure of which is the same as that in Example 1.

[0084] The preparation method of this comparative perovskite solar cell:

[0085] (1) Lead bromide, cesium bromide and potassium bromide were added to a ball mill jar in a molar ratio of 1:1:0.02 and ball milled for 4 hours to obtain CsPbBr3 powder.

[0086] (2) N,N-dimethylformamide, dimethyl sulfoxide and ethylene glycol methyl ether are mixed in a volume ratio of 1:2:1 to obtain a mixed organic solvent.

[0087] (3) The selected CsPbBr3 powder and solvent are mixed at a concentration of 3.45M and stirred thoroughly to obtain cesium lead bromine precursor slurry.

[0088] (4) Place the ITO conductive substrate in an ultraviolet-ozone cleaner for 30 minutes.

[0089] (5) Take an appropriate amount of slurry on the ITO conductive substrate, adjust the height of the scraper, start the scraper to complete the coating, and obtain a CsPbBr3 precursor thick film.

[0090] (6) The CsPbBr3 precursor thick film was placed on a hot plate at 125℃ and heated at a constant temperature for 12h to form a robust thick film, and then cooled at a gradient of 10℃ / h.

[0091] (7) A 9-grid metal electrode is deposited on the surface of the perovskite layer, and a back electrode section metal electrode is deposited in the back electrode area of ​​the ITO conductive substrate.

[0092] Comparative Example 2

[0093] This comparative example is an all-inorganic CsPbBr3 perovskite X-ray detector, the structure of which is the same as that in Example 1.

[0094] The preparation method of this comparative perovskite solar cell:

[0095] (1) Lead bromide, cesium bromide, potassium bromide and hydantoin (Hyd) were added to a ball mill jar in a molar ratio of 1:1:0.02:0.01 and ball milled for 4 hours to obtain CsPbBr3 powder.

[0096] (2) N,N-dimethylformamide, dimethyl sulfoxide and ethylene glycol methyl ether are mixed in a volume ratio of 1:2:1 to obtain a mixed organic solvent.

[0097] (3) The selected CsPbBr3 powder and solvent are mixed at a concentration of 3.45M and stirred thoroughly to obtain cesium lead bromine precursor slurry.

[0098] (4) Place the ITO conductive substrate in an ultraviolet-ozone cleaner for 30 minutes.

[0099] (5) Take an appropriate amount of slurry on the ITO conductive substrate, adjust the height of the scraper, start the scraper to complete the coating, and obtain a CsPbBr3 precursor thick film.

[0100] (6) The CsPbBr3 precursor thick film was placed on a hot plate at 125℃ and heated at a constant temperature for 12h to form a robust thick film, and then cooled at a gradient of 10℃ / h.

[0101] (7) A 9-grid metal electrode is deposited on the surface of the perovskite layer, and a back electrode section metal electrode is deposited in the back electrode area of ​​the ITO conductive substrate.

[0102] Comparative Example 3

[0103] This comparative example is an all-inorganic CsPbBr3 perovskite X-ray detector, the structure of which is the same as that in Example 1.

[0104] The preparation method of this comparative perovskite solar cell:

[0105] (1) Lead bromide, cesium bromide, potassium bromide and hydantoin (Hyd) were added to a ball mill jar in a molar ratio of 1:1:0.02:0.015 and ball milled for 4 hours to obtain CsPbBr3 powder.

[0106] (2) N,N-dimethylformamide, dimethyl sulfoxide and ethylene glycol methyl ether are mixed in a volume ratio of 1:2:1 to obtain a mixed organic solvent.

[0107] (3) The optimized CsPbBr3 powder and solvent are mixed at a concentration of 3.45 M and stirred thoroughly to obtain cesium lead bromine precursor slurry.

[0108] (4) Place the ITO conductive substrate in an ultraviolet-ozone cleaner for 30 minutes.

[0109] (5) Take an appropriate amount of slurry on the ITO conductive substrate, adjust the height of the scraper, start the scraper to complete the coating, and obtain a CsPbBr3 precursor thick film.

[0110] (6) The CsPbBr3 precursor thick film was placed on a hot plate at 125℃ and heated at a constant temperature for 12h to form a robust thick film, and then cooled at a gradient of 10℃ / h.

[0111] (7) A 9-grid metal electrode is deposited on the surface of the perovskite layer, and a back electrode section metal electrode is deposited in the back electrode area of ​​the ITO conductive substrate.

[0112] Comparative Example 4

[0113] This comparative example is an all-inorganic CsPbBr3 perovskite X-ray detector, the structure of which is the same as that in Example 1.

[0114] The preparation method of this comparative perovskite solar cell:

[0115] (1) Lead bromide, cesium bromide, potassium bromide and hydantoin (Hyd) were added to a ball mill jar in a molar ratio of 1:1:0.02:0.02 and ball milled for 4 hours to obtain CsPbBr3 powder.

[0116] (2) N,N-dimethylformamide, dimethyl sulfoxide and ethylene glycol methyl ether are mixed in a volume ratio of 1:2:1 to obtain a mixed organic solvent.

[0117] (3) The optimized CsPbBr3 powder and solvent are mixed at a concentration of 3.45 M and stirred thoroughly to obtain cesium lead bromine precursor slurry.

[0118] (4) Place the ITO conductive substrate in an ultraviolet-ozone cleaner for 30 minutes.

[0119] (5) Take an appropriate amount of slurry on the ITO conductive substrate, adjust the height of the scraper, start the scraper to complete the coating, and obtain a CsPbBr3 precursor thick film.

[0120] (6) The CsPbBr3 precursor thick film was placed on a hot plate at 125℃ and heated at a constant temperature for 12h to form a robust thick film, and then cooled at a gradient of 10℃ / h.

[0121] (7) A 9-grid metal electrode is deposited on the surface of the perovskite layer, and a back electrode section metal electrode is deposited in the back electrode area of ​​the ITO conductive substrate.

[0122] Comparing Example 1 with Comparative Examples 1, 2, 3, and 4, it is evident that the present invention has a significant effect on suppressing ion migration in CsPbBr3 perovskite. Furthermore, the optimal ratio achieves the best results. Whether at a low voltage of 3V or an ultra-high voltage of 70V, the present invention effectively anchors defects in CsPbBr3 perovskite and maintains a stable effect over a long period.

[0123] It should also be noted that this invention is applicable to all-inorganic CsPbBr3 polycrystalline thick-film perovskite X-ray detectors of all structures.

[0124] The present invention does not impose any particular limitation on the powder preparation method. Any synthesis method of cesium lead bromide perovskite in the art can be used, as long as hydantoin can be mixed into the cesium lead bromide powder, but ball milling is preferred.

[0125] The present invention does not impose any particular restrictions on the mixing ratio of organic solvents, which can be adjusted according to the temperature and the target film thickness, but preferably N,N-dimethylformamide, dimethyl sulfoxide and ethylene glycol methyl ether are mixed in a volume ratio of 1:2:1.

[0126] This invention does not impose any particular restrictions on the structure of cesium lead bromide perovskite X-ray detectors. Any effective device structure known in the art can be used, as long as the cesium lead bromide perovskite layer is used as the main X-ray absorbing layer.

[0127] Design principles:

[0128] The two carbonyl groups of hydantoin can effectively bind to Pb with insufficient coordination at bromine vacancy attachments. 2+ Ions enable cesium lead bromide perovskite to actively repair ion defects, effectively suppress carrier recombination at grain boundaries, and thus improve the carrier utilization rate of X-ray detectors.

[0129] Although the present invention has been described above with reference to embodiments, various modifications can be made and components can be replaced with equivalents without departing from the scope of the invention. In particular, as long as there is no structural conflict, the features in the disclosed embodiments can be combined with each other in any manner. The lack of an exhaustive description of these combinations in this specification is merely for the sake of brevity and resource conservation. Therefore, the present invention is not limited to the specific embodiments disclosed herein, but includes all technical solutions falling within the scope of the claims.

Claims

1. A defect anchoring method in the fabrication of an all-inorganic CsPbBr3 perovskite X-ray detector, characterized in that, Includes the following steps: S1. Preparation of CsPbBr3 powder; S2, Prepare organic solvents; S3. Preparation of precursor slurry; S4. Surface treatment of conductive substrate; S5. Slurry application; S6, Annealing and shaping; S7. Device fabrication.

2. The defect anchoring method in the fabrication of all-inorganic CsPbBr3 perovskite X-ray detectors according to claim 1, characterized in that, In S1, the CsPbBr3 powder is prepared by ball milling lead bromide, cesium bromide, potassium bromide, and hydantoin (Hyd) in a molar ratio of 1:1:0.02:0.005 into a ball mill jar.

3. The defect anchoring method in the fabrication of all-inorganic CsPbBr3 perovskite X-ray detectors according to claim 2, characterized in that, In step S1, the ball milling time of the ball milling jar is 4h to 5h, the ball milling jar is a nylon ball milling jar, and the interior of the ball milling jar contains ball milling beads made of zirconia balls.

4. The defect anchoring method in the fabrication of all-inorganic CsPbBr3 perovskite X-ray detectors according to claim 1, characterized in that, In step S2, the organic solvent is obtained by mixing N,N-dimethylformamide, dimethyl sulfoxide, and ethylene glycol methyl ether in a volume ratio of 1:2:

1.

5. The defect anchoring method in the fabrication of an all-inorganic CsPbBr3 perovskite X-ray detector according to claim 1, characterized in that, In step S3, the precursor slurry is a cesium lead bromine precursor slurry, which is obtained by mixing CsPbBr3 powder with a solvent at a concentration of 3.45 M to 4.45 M and stirring thoroughly.

6. The defect anchoring method in the fabrication of an all-inorganic CsPbBr3 perovskite X-ray detector according to claim 1, characterized in that, In step S4, the conductive substrate is an ITO conductive substrate.

7. The defect anchoring method in the fabrication of an all-inorganic CsPbBr3 perovskite X-ray detector according to claim 1, characterized in that, In step S4, the surface treatment method involves placing the conductive substrate in an ultraviolet-ozone cleaning machine for 30 to 45 minutes.

8. The defect anchoring method in the fabrication of an all-inorganic CsPbBr3 perovskite X-ray detector according to claim 1, characterized in that, In step S5, the specific steps for applying the slurry are as follows: using tape to fix the ITO conductive substrate on the flat plate and cover a certain area of ​​conductive region, adjusting the thickness of the resulting thick film by adjusting the height of the scraper, taking an appropriate amount of slurry and pouring it onto the ITO conductive substrate, and starting the scraper.

9. The defect anchoring method in the fabrication of an all-inorganic CsPbBr3 perovskite X-ray detector according to claim 1, characterized in that, In step S6, the annealing process involves placing the CsPbBr3 precursor thick film on a hot plate at 125°C to 165°C and heating it at a constant temperature for 12 to 15 hours to form a robust thick film, followed by a temperature reduction gradient of 10°C / h to 15°C / h.

10. The defect anchoring method in the fabrication of an all-inorganic CsPbBr3 perovskite X-ray detector according to claim 1, characterized in that, In S7, a 3×3mm Au electrode with a thickness of 80nm~95nm is deposited on a CsPbBr3 thick film as the top electrode, and the ITO vacancy is used as the bottom electrode. The X-ray detector device is fabricated using an Au / perovskite / ITO / Au structure.

Images