Edge ring and semiconductor device

Abstract

The invention relates to an edge ring and a semiconductor device. The edge ring comprises an annular body and a plurality of temperature control parts; the annular body comprises a plurality of temperature control sub-areas; the plurality of temperature control components are located on the back face of the annular body and located in the corresponding temperature control sub-areas, and each temperature control component is internally provided with a temperature sensing device and a temperature control device; the plurality of temperature sensing devices are used for synchronously collecting the instantaneous temperatures of the corresponding temperature control sub-areas and transmitting the plurality of instantaneous temperatures to the central processing unit; the plurality of temperature control devices are configured to receive a control instruction from the central processing unit and perform temperature compensation on the corresponding temperature control sub-areas at the same time according to the control instruction; the control instruction is a temperature compensation instruction generated by the central processing unit according to the deviation between the instantaneous temperature of the temperature control sub-area and the preset temperature. The edge ring provided by the invention has an automatic temperature adjusting function, and can meet the intelligent temperature control requirements in process scenes such as high-temperature annealing.

Description

Technical Field

[0001] This application relates to the field of semiconductor equipment technology, and in particular to an edge ring and a semiconductor device. Background Technology

[0002] In high-temperature annealing processes, temperature uniformity is crucial for determining wafer processing quality and reliability. Because the heat dissipation rate at the wafer's edges is higher than at the center, a temperature gradient easily forms along the "center to edge" direction, leading to thermal stress and defects such as lattice slip or dislocations, affecting semiconductor device performance and yield. Therefore, in high-temperature annealing, an edge ring design is typically used around the wafer edge. This reduces heat loss at the wafer edge and regulates the distribution of the radiative thermal field, effectively suppressing localized overcooling or overheating. Furthermore, the edge ring can buffer the cooling effect caused by process gas convection, ensuring uniform heating of the entire wafer at high temperatures (e.g., above 1000°C), mitigating material structure damage and device parameter drift caused by temperature inhomogeneity.

[0003] However, edge rings mostly employ a passive design, meaning they use materials with specific thermal conductivity and heat capacity (such as silicon carbide and quartz) as the thermal expansion structure, relying on the material's inherent thermal properties for thermal compensation. Once the design of a passive edge ring is finalized, its thermal properties are fixed and cannot be dynamically adjusted according to different process formulations and temperature profiles. Therefore, these edge rings lack automatic temperature regulation capabilities and cannot meet the intelligent temperature control requirements of processes such as high-temperature annealing. Summary of the Invention

[0004] Therefore, it is necessary to provide an edge ring that does not have automatic temperature regulation function and cannot meet the intelligent temperature control requirements of processes such as high-temperature annealing.

[0005] An edge ring includes an annular body and multiple temperature control components; the annular body includes multiple temperature control sub-regions; the multiple temperature control components are located on the back side of the annular body and in the corresponding temperature control sub-regions, each temperature control component having a built-in temperature sensing device and a temperature control device; the multiple temperature sensing devices are used to synchronously collect the instantaneous temperature of the corresponding temperature control sub-region and transmit the multiple instantaneous temperatures to a central processing unit; the multiple temperature control devices are configured to receive control instructions from the central processing unit and, according to the control instructions, simultaneously perform temperature compensation on the corresponding temperature control sub-regions; the control instructions are temperature compensation instructions generated by the central processing unit based on the deviation between the instantaneous temperature of the temperature control sub-region and a preset temperature.

[0006] In one embodiment, the temperature control device is connected to the central processing unit (CPU) via a high-speed communication bus. The CPU has a built-in real-time control system and a data storage module. The data storage module stores fused temperature field state information, which includes at least an edge-ring temperature distribution map composed of multiple instantaneous temperatures and the preset temperature. The real-time control system generates control commands based on the fused temperature field state information and using a PID control algorithm. These control commands are then sent to the temperature control device via the high-speed communication bus. This configuration enables high-precision closed-loop temperature control.

[0007] In one embodiment, the central processing unit incorporates a predictive optimization system. This system, based on a device thermal model and a region coupling model, predicts the dynamic changes in the overall thermal field of the edge ring and the wafer located on the edge ring, obtaining a temperature evolution trajectory. Furthermore, the predictive optimization system generates feedforward compensation instructions in advance based on the temperature evolution trajectory, making proactive adjustments to the control instructions. The device thermal model represents the results of device thermal field simulation; the region coupling model is a model constructed based on the coupling relationship between the power of the heating lamp beads, the power of the temperature control device, and the real-time surface temperature of the wafer. This allows for fine-grained adjustment and dynamic control of the temperature field in multiple temperature-controlled sub-regions.

[0008] In one embodiment, the central processing unit controls the power of the corresponding heating lamp beads based on the deviation between the instantaneous temperature and the preset temperature of the multiple temperature-controlled sub-zones. This enables bidirectional temperature regulation of each temperature-controlled sub-zone, thereby improving the system's responsiveness to complex heat load changes.

[0009] In one embodiment, the outer diameter of the annular body is larger than the diameter of the wafer, and the inner diameter of the annular body is smaller than the diameter of the wafer; the outer diameter of the annular body is smaller than the outer contour diameter of the circular lamp array composed of a plurality of heating lamps. This dimensional limitation ensures that the annular body can provide stable support for the wafer, and that the area where the wafer is located is compatible with the heating range of the heating lamps.

[0010] In one embodiment, multiple temperature control components are arranged in a ring shape; the outer shell of each temperature control component is adjacent to the back of the ring-shaped body, and the material of the outer shell of the temperature control component is the same as that of the ring-shaped body. The temperature fields of the temperature control components and the ring-shaped body form a seamless transition, eliminating the thermal island effect caused by the splicing of dissimilar materials, effectively reducing local temperature distortion, and improving the process consistency and product yield of the edge ring.

[0011] In one embodiment, the temperature sensing device has a sampling frequency in the millisecond range; the temperature control device has a response time in the millisecond range. Through this closed-loop linkage of "millisecond-level sampling - millisecond-level response," the control efficiency and precision of temperature changes can be significantly improved.

[0012] In one embodiment, the temperature control device is a high-temperature resistant resistor; and / or, the temperature sensing device is a distributed thermocouple array or a high-temperature infrared temperature measuring device. Using the aforementioned high-temperature resistant resistor ensures that the equipment maintains stable heat output and precise temperature control at 1000℃, meeting the temperature control reliability requirements of processes such as high-temperature annealing.

[0013] In one embodiment, the temperature control device is a silicon-carbon based heating element, a silicide heating element, a metal-based electric heating element, or a ceramic-based electric heating element; and / or, the temperature sensing device is a distributed K-type thermocouple array, a distributed S-type thermocouple array, a distributed B-type thermocouple array, a thin-film thermistor, or a fiber-optic-based high-temperature temperature probe.

[0014] In one embodiment, an annular limiting structure is located on the front side of the annular body and at its edge; the annular limiting structure and the annular body form a stepped structure. The annular limiting structure is continuously arranged circumferentially along the edge of the front side of the annular body, forming an annular limiting groove adapted to the wafer, which can constrain the circumferential displacement of the wafer.

[0015] Based on this, this application also provides a semiconductor device, which includes the edge ring described in any of the above embodiments.

[0016] This application embodiment integrates multiple temperature control components on the back of the annular body, directly combining temperature sensing and temperature control devices onto the edge ring. This forms a closed-loop temperature control system of "real-time detection and dynamic adjustment." Based on this design, local temperature deviations at any location on the edge ring can be quickly and accurately compensated, improving the dynamic response performance and temperature field uniformity of the edge ring. This, in turn, enables rapid and precise local temperature control of the wafer edge region, improving the temperature uniformity of the wafer surface. Therefore, the edge ring provided by this application possesses automatic temperature adjustment capabilities, meeting the intelligent temperature control requirements of processes such as high-temperature annealing. Attached Figure Description

[0017] To more clearly illustrate the technical solutions in the embodiments of this application or the conventional technology, the drawings used in the description of the embodiments or the conventional technology will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0018] Figure 1 This is a schematic diagram of the edge ring structure provided in an embodiment of this application;

[0019] Figure 2 This is a schematic diagram of the structure of the temperature control component provided in the embodiments of this application;

[0020] Figure 3 A schematic diagram of the structure provided in this application embodiment, showing the edge ring disposed in the cavity of a rapid annealing furnace;

[0021] Figure 4 A schematic diagram illustrating the system relationships of the central processing unit, intelligent control algorithm system, temperature control system, and temperature sensing system provided in the embodiments of this application. Detailed Implementation

[0022] To facilitate understanding of this application, it will be described in more detail below. However, it should be understood that this application can be implemented in many different forms and is not limited to the embodiments or examples described herein. Rather, these embodiments or examples are provided to provide a more thorough and complete understanding of the disclosure of this application.

[0023] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein in the specification of this application is for the purpose of describing particular implementations or embodiments only and is not intended to be limiting of this application. The optional range of the term "and / or" as used herein includes any one of two or more of the related listed items, as well as any and all combinations of the related listed items, including any two related listed items, any more related listed items, or a combination of all related listed items.

[0024] In this application, numerical ranges are referred to as continuous unless otherwise specified, and include the minimum and maximum values ​​of the range, as well as every value between the minimum and maximum values. Furthermore, when the range refers to integers, it includes every integer between the minimum and maximum values ​​of the range. Additionally, when multiple ranges are provided to describe a feature or characteristic, the ranges may be merged. In other words, unless otherwise specified, all ranges disclosed herein should be understood to include any and all subranges to which they are incorporated.

[0025] In related technologies, wafer carriers mainly include covered trays and edge rings, both of which have significant drawbacks in application.

[0026] When carrying wafers, covered trays are prone to poor uniformity of temperature field on the wafer surface due to edge effect, and uneven airflow inside the tray can easily cause heat transfer imbalance, resulting in local thermal stress. In addition, particles generated by mechanical friction during the opening and closing of the tray cover, as well as contaminants adsorbed by the cover itself, can easily cause wafer surface contamination.

[0027] When using edge rings to support wafers, the edge rings, with their simple structure and lack of moving parts, can reduce the risk of wafer contamination and improve the temperature difference between the wafer center and edge. However, the following problems still exist: ① Uneven heat radiation reception, with greater heat loss at the wafer edge, and changes in thermal contact between the edge ring and the wafer, as well as differences in their heating rates, lead to local temperature drift; ② The heating functions added to some edge rings are mostly overall heating or simple zone heating, which suffers from low control accuracy and slow response speed, making it impossible to achieve fast and accurate local temperature control; ③ Some local temperature control designs can achieve passive temperature correction through LED radiation, but this design relies on high-density LED arrangement and independent control to achieve precise temperature control, resulting in high cost, complex design and installation, and low heating efficiency.

[0028] Figure 1 This is a schematic diagram of the edge ring structure provided in an embodiment of this application; Figure 2 This is a schematic diagram of the structure of the temperature control component provided in the embodiments of this application; Figure 3 A schematic diagram of the structure provided in this application embodiment, showing the edge ring disposed in the cavity of a rapid annealing furnace; Figure 4 A schematic diagram illustrating the system relationships of the central processing unit, intelligent control algorithm system, temperature control system, and temperature sensing system provided in the embodiments of this application.

[0029] Based on this, embodiments of this application provide an edge ring. For example... Figure 1 and Figure 2 As shown; the edge ring includes an annular body 101 and multiple temperature control components 110;

[0030] The annular body 101 includes multiple temperature-controlled sub-regions;

[0031] Multiple temperature control components 110 are located on the back of the annular body 101 and in corresponding temperature control sub-areas; each temperature control component 110 has a built-in temperature sensing device 112 and a temperature control device 111.

[0032] Multiple temperature sensors 112 are used to synchronously collect the instantaneous temperature of the corresponding temperature control sub-zone and transmit the multiple instantaneous temperatures to the central processing unit 200; multiple temperature control devices 111 are configured to receive control instructions from the central processing unit 200 and perform temperature compensation on the corresponding temperature control sub-zone according to the control instructions; the control instructions are temperature compensation instructions generated by the central processing unit 200 based on the deviation between the instantaneous temperature of the temperature control sub-zone and the preset temperature.

[0033] It is understood that, in this embodiment of the application, multiple temperature control components 110 are provided on the back side of the annular body 101, directly integrating the temperature sensing device 112 and the temperature control device 111 onto the edge ring. These two components form a closed-loop temperature control system of "real-time detection and dynamic adjustment." Based on this design, local temperature deviations at any location on the edge ring can be quickly and accurately compensated, improving the dynamic response performance and temperature field uniformity of the edge ring. This, in turn, allows for rapid and accurate local temperature control of the wafer edge region, improving the temperature uniformity of the wafer surface. Therefore, the edge ring provided by this application has an automatic temperature adjustment function, which can meet the intelligent temperature control requirements of processes such as high-temperature annealing.

[0034] In some embodiments, please refer to Figure 3 An edge ring is disposed within the rapid annealing furnace cavity to support the substrate during high-temperature operation. Specifically, the front side of the annular body 101 of the edge ring is used to place the wafer 300. Multiple heating lamps 302 are positioned above the wafer 300 for heating it. The multiple heating lamps 302 can form a circular lamp array. The material of the annular body 101 can be a high-temperature resistant material, such as silicon carbide (SiC) or molybdenum disilicide (MoSi2). The heating lamps 302 can be densely packed high-power halogen lamps.

[0035] In some specific embodiments, please refer to Figure 3 When performing a high-temperature annealing process in an 8-inch rapid annealing furnace, under the condition of being filled with process gases such as inert gases, an electric current is applied to heat the tungsten filament in the heating lamp 302 located below the chamber wall 301 to generate infrared light. The infrared radiation passes through the transparent quartz cover 303 and heats the surface of the wafer 300 located on the edge ring by means of radiative heat. Figure 3 The direction indicated by the middle arrow is the flow direction of the process gas.

[0036] In some embodiments, the annular body 101 may be defined by an inner edge, an outer edge, an upper side, and a lower side; the inner and outer edges of the annular body 101 are concentric about a central axis. The outer diameter of the annular body 101 is larger than the diameter of the wafer 300, and the inner diameter of the annular body 101 is smaller than the diameter of the wafer 300; the outer diameter of the annular body 101 is smaller than the outer contour diameter of the circular LED array. Through these dimensional limitations, it can be ensured that the annular body 101 can provide stable support for the wafer 300, and that the area where the wafer 300 is located is adapted to the heating range of the heating LEDs 302.

[0037] Specifically, the outer diameter of the annular body 101 can be 8 inches to 14 inches; the diameter of the wafer can be 8 inches; and the outer diameter of the circular LED array can be 10 inches to 15 inches.

[0038] It should be noted that the inner diameter of the annular body 101 refers to the diameter of the circle enclosed by its inner edge, that is, the maximum distance between any two points on the inner edge through the central axis; the outer diameter of the annular body 101 refers to the diameter of the circle enclosed by its outer edge, that is, the maximum distance between any two points on the outer edge through the central axis.

[0039] In some embodiments, the annular body 101 can be circular in shape, and a plurality of temperature-controlled sub-regions on the annular body 101 are distributed in a circular shape adapted to the shape of the annular body 101; correspondingly, a plurality of temperature-controlled components 110 are distributed in a ring shape to achieve precise temperature control of each temperature-controlled sub-region. The insertion density of the plurality of temperature-controlled components 110 on the back side of the annular body 101 can be determined by the precision of the edge ring manufacturing process; for example, the number of temperature-controlled components 110 can be set to 20-500.

[0040] It should be noted that in this application, the distribution of multiple temperature control sub-regions is adapted to the shape of the annular body 101, and this application does not limit the specific shape of the annular body 101. In other embodiments, the annular body 101 can also be set as a rectangle or other arbitrarily adaptable shape according to the actual application scenario, and the distribution of the corresponding temperature control sub-regions and temperature control components 110 can also be adaptively adjusted according to the shape of the annular body 101.

[0041] In some embodiments, the temperature control component 110 may be cylindrical in shape and may consist of a temperature sensing device 112, a temperature control device 111, and a housing 113. The housing 113 of the temperature control component 110 is adjacent to the back side of the annular body 101, and the material of the housing 113 of the temperature control component 110 is the same as that of the annular body 101. Thus, the temperature control component 110 can be regarded as an extension structure of the annular body. The temperature field of the temperature control component 110 and the annular body 101 forms a seamless transition, which can eliminate the thermal island effect caused by the splicing of heterogeneous materials, effectively reduce local temperature distortion, and thus improve the process consistency and product yield of the edge ring.

[0042] In some specific embodiments, the temperature control component 110 can be a cap-shaped structure; the bottom opening of the cap-shaped structure is attached to the back of the annular body 101; the diameter of the cap-shaped structure can be 0.5cm-1.0cm; the material of the outer shell 113 of the temperature control component 110 can be a high-temperature resistant material, such as silicon carbide or molybdenum disilicide.

[0043] In some embodiments, each temperature control component 110 incorporates a temperature sensor 112 and a temperature control device 111, such that the temperature sensor 112 and the temperature control device 111 within the same temperature control component 110 can correspond one-to-one, and the distribution pattern of the multiple temperature sensors 112 on the back side of the annular body 101 is completely consistent with the distribution pattern of the multiple temperature control devices 111. In some other embodiments, the number of temperature sensors 112 and temperature control devices 111 incorporated in each temperature control component 110 can be set according to actual needs, and this application does not impose specific limitations on this.

[0044] In some embodiments, the temperature sensing device 112 has a sampling frequency in the millisecond range, and the temperature control device 111 has a response time in the millisecond range. Thus, the temperature sensing device 112 can acquire the instantaneous temperature of the corresponding area in milliseconds, and the temperature control device 111 has high responsiveness, dynamically compensating for local temperature deviations on the edge ring within a time range of milliseconds to seconds.

[0045] Understandably, the temperature control device 111 possesses rapid heating capabilities and can achieve bidirectional temperature control (heating / cooling) output as needed. It can independently, actively, in real-time, and in a closed-loop manner adjust the temperature of each temperature control sub-zone. Compared to related technologies that use gas heat transfer to control local temperature differences, this embodiment of the application, through a closed-loop linkage of "millisecond-level acquisition - millisecond-level response," can significantly improve the control efficiency and regulation accuracy of temperature changes, achieving stable and precise spatial distributed temperature control in high-temperature environments.

[0046] In some embodiments, the temperature control device 111 can be a high-temperature resistant resistive element; depending on the base material, the temperature control device 111 can be a silicon carbide-based heating element, a silicide heating element, a metal-based electric heating element, or a ceramic-based electric heating element; for example, the temperature control device 111 can be a molybdenum disilicide heating rod, a silicon carbide electric heating element, a tungsten (W) heating wire, a rhenium (Re) heating wire, an alumina (Al2O3)-based ceramic heater, or a zirconium oxide (ZrO2)-based ceramic heater, etc. The temperature control device 111 can also be referred to as a "temperature control actuator," a "high-temperature actuator unit," or a "high-temperature actuator."

[0047] Understandably, the use of the aforementioned high-temperature resistant resistors ensures that the equipment maintains stable heat output and precise temperature control at a high temperature of 1000℃, meeting the temperature control reliability requirements of processes such as high-temperature annealing.

[0048] In some embodiments, the temperature sensing device 112 is a distributed thermocouple array or a high-temperature infrared temperature measuring device; in some specific embodiments, the temperature sensing device 112 can be a distributed K-type thermocouple array, a distributed S-type thermocouple array, or a distributed B-type thermocouple array; the temperature sensing device 112 can also be a thin-film thermistor or a fiber-optic-based high-temperature temperature probe. The temperature sensing device 112 can also be referred to as an "embedded high-resolution thermal sensor," a "high-density temperature sensing unit," or a "high-temperature fast-response temperature sensing unit."

[0049] It is understandable that using a distributed thermocouple array, a high-temperature infrared temperature measuring device, a thin-film thermistor, or a fiber-optic-based high-temperature temperature probe as the temperature sensing device 112 can, on the one hand, meet the requirements for long-term stable operation in environments above 1000℃ through the high-temperature resistant and interference-resistant material properties and structural design, adapt to high-temperature annealing processes, and avoid the problem of high-temperature failure of sensing elements; on the other hand, with the performance advantages of high precision, high spatial resolution, and fast response, it can accurately acquire the temperature field distribution or local micro-area temperature data of the measured object, providing reliable data support for the dynamic compensation and adjustment of the temperature control device 111, thereby helping to improve the temperature uniformity of the wafer surface.

[0050] In some embodiments, multiple temperature sensing devices 112 can constitute a temperature sensing system 230 (also known as a "high-resolution real-time temperature sensing system") for collaboratively acquiring the instantaneous temperature of each temperature-controlled sub-region; the instantaneous temperatures of multiple temperature-controlled sub-regions are integrated to form a high spatial resolution edge ring temperature distribution map; multiple temperature control devices 111 constitute a temperature control system 220 (also known as a "multi-region active temperature regulation execution system") for collaboratively regulating the temperature deviation of each temperature-controlled sub-region. In some embodiments, the temperature control device 111 can be connected to the central processing unit 200 via a high-speed communication bus; the central processing unit 200 has a built-in real-time control system and a data storage module; the data storage module stores the fused temperature field state information, which includes at least the edge ring temperature distribution map composed of multiple instantaneous temperatures and a preset temperature; the real-time control system generates control commands based on the fused temperature field state information and uses a PID control algorithm, and the control commands are sent to the temperature control device 111 via the high-speed communication bus; the fused temperature field state information includes at least the edge ring temperature distribution map composed of multiple instantaneous temperatures and a preset temperature.

[0051] In some specific embodiments, the data storage module is configured to receive instantaneous temperatures transmitted by multiple temperature sensing devices 112 in real time and dynamically update the edge ring temperature distribution map to form real-time fused temperature field state information.

[0052] Understandably, the fused temperature field state information integrates the instantaneous temperature distribution of the entire thermal management area of ​​the edge ring with the preset temperature benchmark, providing comprehensive data support for temperature regulation; the PID control algorithm accurately calculates the compensation amount through proportional-integral-derivative operations, and can dynamically track temperature changes; the control command is directly transmitted to the temperature control device 111 via the high-speed communication bus, which can reduce transmission delay and ensure rapid response after deviation occurs; thus, high-precision closed-loop temperature control can be achieved.

[0053] In some specific embodiments, the temperature sensing device 112 can also be connected to the central processing unit 200 via a high-speed communication bus; the high-speed feedback data (i.e., instantaneous temperature) acquired by the temperature sensing device 112 can be transmitted to the central processing unit 200 via the high-speed communication bus to realize high-resolution temperature detection and feedback; the central processing unit 200 can implement PID control on the temperature control device 111 based on the high-speed feedback data to realize zoned collaborative regulation.

[0054] For example, when the temperature of a certain temperature control sub-zone deviates from the set value (preset temperature), the central processing unit 200 can adjust the heating power of the temperature control device 111 in that area in real time based on the data fed back by the temperature sensing system 230, thereby actively adjusting the temperature of that area.

[0055] In some embodiments, the central processing unit 200 has a built-in predictive optimization system. The predictive optimization system predicts the dynamic changes of the overall thermal field of the edge ring and the wafer 300 located on the edge ring based on the device thermal model and the region coupling model, and obtains the temperature evolution trajectory. Furthermore, the predictive optimization system generates feedforward compensation instructions in advance according to the temperature evolution trajectory to adjust the control instructions in advance. The device thermal model is the simulation result of the device thermal field. The region coupling model is a model constructed based on the coupling relationship between the power of the heating lamp 302, the power of the temperature control device 111 and the real-time surface temperature of the wafer 300.

[0056] Understandably, by incorporating a predictive optimization system within the central processing unit 200, it is possible to predict in advance temperature deviations caused by thermal inertia, regional thermal coupling effects, or external disturbances during high-temperature annealing. Based on the prediction results, feedforward compensation instructions are generated to suppress temperature field fluctuations caused by various interference factors, thereby achieving fine-grained adjustment and dynamic control of the temperature field in multiple temperature control sub-regions.

[0057] In some embodiments, the real-time surface temperature of wafer 300 can be detected by a TC wafer (thermocouple wafer); specifically, by setting multiple thermocouples on the surface of wafer 300, the real-time surface temperature of wafer 300 can be detected and input to the central processing unit 200.

[0058] It is understandable that by constructing a regional coupling model based on the coupling relationship between the power of the heating lamp 302, the power of the temperature control device 111, and the real-time surface temperature of the wafer 300, the edge ring temperature information and the actual surface temperature of the wafer can be accurately mapped and correlated, thereby improving the temperature control accuracy of the overall temperature control system 220.

[0059] It should be noted that the aforementioned real-time control system and predictive optimization system can constitute an intelligent control algorithm system 210, and the algorithm built into the intelligent control system can be called an intelligent control algorithm; the temperature sensing system 230, the temperature control system 220, the central processing unit 200, and the intelligent control algorithm system 210 built into the central processing unit 200 can constitute an edge-loop temperature control system (such as...). Figure 4 (As shown). The central processing unit 200 is used to realize real-time linkage between the temperature sensing system 230, the temperature control system 220, and the intelligent control algorithm, thereby enabling real-time response, predictive compensation, and dynamic closed-loop optimization of temperature regulation.

[0060] In some embodiments, the central processing unit 200 controls the power of the corresponding heating lamps 302 based on the deviation between the instantaneous temperature and the preset temperature of multiple temperature-controlled sub-zones. This enables bidirectional temperature regulation of each temperature-controlled sub-zone, thereby improving the responsiveness of the edge-ring temperature control system to complex heat load changes.

[0061] In some embodiments, the edge ring further includes an annular limiting structure 102, which is located on the front side of the annular body 101 and at the edge of the annular body 101; the annular limiting structure 102 and the annular body 101 form a stepped structure. It is understood that the annular limiting structure 102 is continuously arranged circumferentially along the front edge of the annular body 101 to form an annular limiting groove adapted to the wafer 300, which can constrain the circumferential displacement of the wafer.

[0062] In some embodiments, a gas flow device 304 is also disposed below the edge ring. The gas flow device 304 has a plurality of uniformly distributed gaps, each gap allowing the gas inside the rapid annealing furnace to flow through, thereby accelerating the heat exchange rate of the wafer surface and achieving rapid and uniform cooling of the wafer.

[0063] In summary, the edge ring provided in this application has the following core advantages: Firstly, it reduces the risk of particle detachment, ensures wafer cleanliness meets process requirements, and effectively reduces particle generation (e.g., the number of particles with a surface diameter ≥0.5µm on an 8-inch wafer is controlled to no more than 100 per wafer). Secondly, it has an active temperature regulation function, which can actively and accurately regulate the temperature of local areas of the edge ring, effectively suppressing temperature gradients caused by factors such as uneven reception, edge heat loss, and changes in thermal contact between the edge ring and the wafer, improving the temperature uniformity of the wafer surface, avoiding lattice defects caused by thermal stress, and thus improving device yield and process reliability. In addition, it enhances the stability and response speed of high-temperature processes, and can adapt to the high-temperature process requirements of rapid heating, local compensation, and strict temperature windows.

[0064] Based on this, this application also provides a semiconductor device, which includes the edge ring described in any of the above embodiments.

[0065] In this application, the semiconductor equipment can be a rapid annealing furnace, or it can be a semiconductor manufacturing equipment that requires temperature control and uniformity adjustment of the wafer, such as a plasma etching machine, chemical vapor deposition equipment, physical vapor deposition equipment, or ion implanter.

[0066] The technical features of the above embodiments can be combined in any way. For the sake of brevity, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0067] The embodiments described above are merely illustrative of several implementation methods of this application, and while the descriptions are relatively specific and detailed, they should not be construed as limiting the scope of the invention patent. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of this application, and these all fall within the protection scope of this application. Therefore, the protection scope of this patent application should be determined by the appended claims.

Claims

1. An edge ring, characterized in that, The edge ring includes an annular body and multiple temperature control components; The annular body includes multiple temperature-controlled sub-regions; Multiple temperature control components are located on the back of the annular body and in the corresponding temperature control sub-area. Each temperature control component has a built-in temperature sensing device and a temperature control device. Multiple temperature sensing devices are used to synchronously collect the instantaneous temperature of the corresponding temperature control sub-region and transmit the multiple instantaneous temperatures to the central processing unit; multiple temperature control devices are configured to receive control instructions from the central processing unit and, according to the control instructions, simultaneously perform temperature compensation on the corresponding temperature control sub-region; the control instructions are temperature compensation instructions generated by the central processing unit based on the deviation between the instantaneous temperature of the temperature control sub-region and a preset temperature.

2. The edge ring according to claim 1, characterized in that, The temperature control device is connected to the central processing unit via a high-speed communication bus. The central processing unit has a built-in real-time control system and a data storage module; The data storage module stores the fused temperature field state information, which includes at least an edge ring temperature distribution map composed of multiple instantaneous temperatures and the preset temperature. The real-time control system generates the control command based on the fused temperature field state information and using a PID control algorithm. The control command is then sent to the temperature control device via the high-speed communication bus.

3. The edge ring according to claim 1 or 2, characterized in that, The central processing unit has a built-in predictive optimization system; The predictive optimization system, based on the device thermal model and the region coupling model, predicts the dynamic changes of the overall thermal field of the edge ring and the wafer located on the edge ring, obtaining the temperature evolution trajectory. Furthermore, the predictive optimization system generates feedforward compensation commands in advance based on the temperature evolution trajectory, and adjusts the control commands ahead of time. The device thermal model is the result of device thermal field simulation; the region coupling model is a model constructed based on the coupling relationship between the power of the heating lamp beads, the power of the temperature control device, and the real-time surface temperature of the wafer.

4. The edge ring according to claim 3, characterized in that, The central processing unit controls the power of the corresponding heating lamp beads based on the deviation between the instantaneous temperature and the preset temperature of the multiple temperature control sub-regions.

5. The edge ring according to claim 3, characterized in that, The outer diameter of the annular body is larger than the diameter of the wafer, and the inner diameter of the annular body is smaller than the diameter of the wafer; the outer diameter of the annular body is smaller than the outer contour diameter of the circular lamp array composed of a plurality of heating lamp beads.

6. The edge ring according to claim 1, characterized in that, The multiple temperature control components are arranged in a ring; the outer shell of the temperature control component is in contact with the back of the ring-shaped body, and the material of the outer shell of the temperature control component is the same as the material of the ring-shaped body.

7. The edge ring according to claim 1, characterized in that, The temperature sensing device has a sampling frequency in the millisecond range; the temperature control device has a response time in the millisecond range.

8. The edge ring according to claim 1, characterized in that, The temperature control device is a high-temperature resistant resistive element; and / or, the temperature sensing device is a distributed thermocouple array or a high-temperature infrared temperature measuring device.

9. The edge ring according to claim 1, characterized in that, The temperature control device is a silicon-carbon based heating element, a silicide heating element, a metal-based electric heating element, or a ceramic-based electric heating element; and / or, the temperature sensing device is a distributed K-type thermocouple array, a distributed S-type thermocouple array, a distributed B-type thermocouple array, a thin-film thermistor, or a fiber-optic-based high-temperature temperature probe.

10. The edge ring according to claim 1, characterized in that, The edge ring also includes: A ring-shaped limiting structure is located on the front side of the ring-shaped body and at the edge of the ring-shaped body; the ring-shaped limiting structure and the ring-shaped body form a stepped structure.

11. A semiconductor device, characterized in that, The semiconductor device includes an edge ring as described in any one of claims 1 to 10.

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