Wafer film deposition machine and wafer film deposition system

Abstract

The invention provides a wafer thin film deposition machine table and a wafer thin film deposition system.The wafer thin film deposition machine table comprises a reaction cavity, a first conveying opening is formed in the side wall, and the interior and the exterior of the reaction cavity are communicated through the first conveying opening; the wafer enters and exits the reaction cavity through the first transmission port; the base is arranged in the reaction cavity and is used for bearing a wafer; and the movable shielding piece can be used for opening or closing the first conveying opening. According to the wafer thin film deposition machine, when the wafer needs to be transferred into the reaction cavity for thin film deposition reaction, the shielding piece is moved to open the first conveying opening, and when the wafer is conveyed into the reaction cavity for thin film deposition reaction, the shielding piece moves to close the first conveying opening; the process gas is prevented from entering the transmission channel outside the reaction cavity through the first transmission port to pollute the inner wall of the transmission channel, so that pollution particles are prevented from falling on the surface of the wafer in the wafer transmission process, and the yield of products is improved.

Description

Technical Field

[0001] This invention relates to the field of semiconductor processing equipment technology, and in particular to a wafer thin film deposition machine and a wafer thin film deposition system. Background Technology

[0002] Epitaxial growth (EPI) is a process of depositing a thin layer of single-crystal material on a single-crystal substrate. EPI is usually achieved in a machine by chemical vapor deposition (CVD).

[0003] The equipment contains a reaction chamber with a base for holding the wafer. The reaction chamber is connected to the wafer cache unit via a slit channel, through which the wafer enters and exits the reaction chamber. Due to the elongated and narrow location of the slit channel, it is difficult to remove the coating using HCl etching (an etching method that uses hydrogen chloride gas as an etchant to remove part of the material from the surface through a chemical reaction). Therefore, the coating tends to grow thicker and thicker within the slit channel. If this coating detaches and falls onto the wafer, it becomes contaminant particles on the wafer surface, ultimately affecting product yield. Summary of the Invention

[0004] The purpose of this invention is to provide a wafer thin film deposition machine and a wafer thin film deposition system that can avoid wafer contamination and improve product yield.

[0005] To achieve the above objectives, in a first aspect, the present invention provides a wafer thin film deposition apparatus, comprising: The reaction chamber has a first transfer port on its side wall, which connects the interior of the reaction chamber to the outside; the wafer enters and exits the reaction chamber through the first transfer port. A base, located within the reaction chamber, is used to support the wafer; A movable shield, which can be used to open or close the first conveyor port. The beneficial effects of the wafer thin film deposition apparatus provided by this invention are as follows: By setting a movable shielding member inside the reaction chamber, the shielding member can open or close the first transfer port. Therefore, when it is necessary to transfer the wafer into the reaction chamber for thin film deposition, the shielding member needs to be moved to open the first transfer port. When the wafer is transferred to the substrate inside the reaction chamber for thin film deposition, the shielding member moves to close the first transfer port, preventing process gases from entering the transfer channel located outside the reaction chamber through the first transfer port and contaminating the inner wall of the transfer channel. This avoids contamination particles falling onto the wafer surface during the wafer transfer process, thereby improving the product yield.

[0006] In some embodiments, the wafer thin film deposition equipment further includes a liner assembly disposed within the reaction chamber and fitted onto the base, the liner assembly including the movable shielding member.

[0007] In some embodiments, the liner assembly includes a liner ring and a driver; The inner liner ring is disposed inside the reaction chamber and surrounds the base. The side wall of the inner liner ring is provided with a second conveying port corresponding to the first conveying port. The second conveying port is connected to the first conveying port. The shielding component is movably disposed within the second conveying port; The driver is connected to the shielding member and is used to drive the shielding member to open or close the second transfer port. Its advantages are as follows: the inner liner assembly includes an inner liner ring and a driver. The inner liner ring is located inside the reaction chamber and sleeved on the base. The side wall of the inner liner ring has a second transfer port corresponding to the first transfer port, and the second transfer port communicates with the first transfer port. Therefore, during the wafer transfer process, it needs to pass through both the first and second transfer ports to enter the reaction chamber. The shielding member is movably located at the second transfer port, and the driver is connected to the shielding member. By driving the shielding member to open or close the second transfer port, it prevents process gases from adhering to the second transfer port, the first transfer port, and the transfer channel located outside the reaction chamber, forming contaminant particles that cannot be cleaned. This reduces the possibility of wafer contamination and improves product yield.

[0008] In some embodiments, a groove is provided at the bottom or top of the second conveying port, the groove extending through the inner liner ring from the bottom of the second conveying port; The shielding member is slidably disposed in the chute. The shielding member has a shielding part and a connecting part. The shielding part is adapted to the second conveying port, and the connecting part extends from the bottom or top of the chute. The driver is located inside the reaction chamber and is connected to the connecting part; When the second conveying port needs to be closed, the driver extends the blocking part to block the second conveying port; when the second conveying port needs to be opened, the driver retracts the blocking part into the groove. Its advantages are: a groove is provided at the bottom or top of the second conveying port, the blocking part is slidably disposed within the groove, and the driver is connected to the blocking part to drive the blocking part to move up and down. By driving the blocking part to move up and down, the second conveying port is controlled to open or close, thus preventing the leakage of process gases.

[0009] In some embodiments, the driver is preset with a first retraction distance; When the driver retracts the shielding part into the chute until it stops according to the first retraction distance, a portion of the shielding part protrudes from the inner wall of the bottom or top of the second conveying port. The beneficial effect is that by pre-setting the first retraction distance on the driver, a portion of the shielding part protrudes from the inner wall of the bottom or top of the second conveying port, forming a step within the second conveying port. This step prevents contaminant particles from entering the reaction chamber from the transport channel located outside the reaction chamber, ensuring the cleanliness of the reaction chamber and further improving product yield.

[0010] In a second aspect, embodiments of the present invention provide a wafer thin film deposition system, comprising: a wafer buffer stage, a connector, and the wafer thin film deposition stage; The connector has a transmission channel, a first connection end, and a second connection end. The transmission channel is opened along the axial direction of the connector and connects the first connection end and the second connection end. The first connection end is connected to the reaction chamber, and the second connection end is connected to the wafer cache stage. The wafer cache station is used to store wafers and can transfer the wafers to the reaction chamber through the transmission channel.

[0011] The beneficial effects of the wafer thin film deposition system provided by the present invention are as follows: by using the wafer thin film deposition machine provided by the present invention in the wafer thin film deposition system, process gases are prevented from entering the transport channel and depositing in the transport channel, thereby preventing contaminant particles in the transport channel from falling onto the wafer surface during the wafer transport process, and improving the product yield.

[0012] In some embodiments, the wafer thin film deposition system further includes a gas splitter; The top of the transmission channel is provided with a mounting slot; The gas diversion component is disposed within the mounting groove. The gas diversion component has a first exhaust port and a second exhaust port. The first exhaust port sprays air towards the first connecting end, and the second exhaust port blows air towards the bottom of the transmission channel to form an air curtain, which separates the transmission channel. Its advantages are: by setting the gas diversion component within the transmission channel, the first exhaust port on the gas diversion component sprays air towards the first connecting end, preventing process gas from overflowing from the edges of the shielding component and the second conveying port within the reaction chamber, thus ensuring the cleanliness of the transmission channel. The second exhaust port on the gas diversion component blows air towards the bottom of the transmission channel to form an air curtain, which separates the transmission channel and prevents contaminant particles from the wafer cache from entering the reaction chamber through the transmission channel, ensuring the cleanliness of the reaction chamber and greatly improving product yield.

[0013] In some embodiments, the gas splitter has an inlet pipe and a splitter body; The diversion body has a first exhaust channel and a second exhaust channel along its axial direction. The diversion body has a first sidewall and a second sidewall. The first sidewall and the second sidewall are adjacent to each other and perpendicular to each other. A plurality of first exhaust holes are provided at intervals on the first sidewall. The first exhaust holes are connected to the first exhaust channel. A plurality of second exhaust holes are provided at intervals on the second sidewall. The second exhaust holes are connected to the second exhaust channel. One end of the intake pipe is connected to the first exhaust channel and the second exhaust channel, and the other end of the intake pipe is used to connect to the purging gas.

[0014] In some embodiments, the liner assembly includes a liner ring and a driver; The inner liner ring is disposed inside the reaction chamber and surrounds the base. The side wall of the inner liner ring is provided with a second conveying port corresponding to the first conveying port. The second conveying port is connected to the first conveying port. The shielding component is movably disposed within the second conveying port; The driver is connected to the shielding member, and the driver is also preset with a first extension distance; When the driver extends the shielding member outward from the chute according to the first extension distance until it stops, there is a gap between the top of the shielding member and the top inner wall of the second conveying port, and the first exhaust port blows air into the gap. The beneficial effects are: the driver has a preset first extension distance; when the driver extends the shielding member outward from the chute according to the first extension distance until it stops, there is a gap between the top of the shielding member and the top inner wall of the second conveying port, thus connecting the reaction chamber and the transmission channel. This avoids a large pressure difference between the reaction chamber and the transmission channel, preventing the shielding member from being unable to rise or fall. Furthermore, to prevent process gas in the reaction chamber from overflowing from the gap, the first exhaust port blows air into the gap, ensuring the cleanliness of the transmission channel.

[0015] In some embodiments, the width of the purging area formed by purging the plurality of first exhaust holes is greater than the width of the gap. The advantage is that by setting the width of the purging area formed by purging the plurality of first exhaust holes to be greater than the width of the gap, contamination of the transmission channel by the overflow of process gas from the reaction chamber is avoided. Attached Figure Description

[0016] Figure 1 This is a schematic diagram of the structure of a wafer thin film deposition machine after the first transfer port is closed, as provided in an embodiment of the present invention. Figure 2 A cross-sectional view of the inner liner ring along its radial direction, provided in an embodiment of the present invention; Figure 3 This is a schematic diagram of the structure of a wafer thin film deposition machine after the first transfer port is opened, according to an embodiment of the present invention. Figure 4 This is a schematic diagram of the structure of the wafer thin film deposition system provided by the present invention; Figure 5 This is a schematic diagram of the structure of the gas splitter provided in the embodiment of the present invention; Figure 6 A cross-sectional view along the axial direction of the gas splitter provided in the embodiment of the present invention.

[0017] Figure label: Reaction chamber 1, first transfer port 11, base 2, inner liner assembly 3, inner liner ring 31, second transfer port 311, slide 312, shield 32, driver 33, connector 4, transmission channel 41, first connection end 42, second connection end 43, wafer buffer stage 5, wafer thin film deposition stage 6, gas splitter 7, inlet pipe 71, splitter body 72, first exhaust port 721, second exhaust port 722, first exhaust channel 723, second exhaust channel 724. Detailed Implementation

[0018] To make the objectives, technical solutions, and advantages of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. All other embodiments obtained by those skilled in the art based on the embodiments of the present invention without inventive effort are within the scope of protection of the present invention. Unless otherwise defined, the technical or scientific terms used herein should have the ordinary meaning understood by those skilled in the art to which this invention pertains. The terms "comprising" and similar expressions used herein mean that the element or object preceding the word covers the element or object listed after the word and its equivalents, without excluding other elements or objects. Unless otherwise specified, the term "connection" as used herein can refer to a direct connection or an indirect connection, i.e., a connection through an intermediate object.

[0019] To address the problems existing in the prior art, embodiments of the present invention provide a wafer thin film deposition machine, with reference to... Figure 1 As shown, the wafer thin film deposition machine includes a reaction chamber 1, a base 2, and a movable shielding member 32. The reaction chamber 1 has a first transfer port 11 on its side wall, which connects the interior of the reaction chamber 1 to the outside, allowing the wafer to enter and exit the reaction chamber 1. The base 2 is located inside the reaction chamber 1 and supports the wafer for thin film deposition within the reaction chamber 1. The shielding member 32 is movably located inside the reaction chamber 1 and can be used to open or close the first transfer port 11.

[0020] In this embodiment, a movable shielding member 32 is provided within the reaction chamber 1, which can open or close the first transfer port 11. Therefore, when a wafer needs to be transferred to the reaction chamber 1 for thin film deposition, the shielding member 32 is moved to open the first transfer port 11, allowing the robotic arm to pick up the wafer and place it on the base 2 through the first transfer port 11. Before the wafer undergoes thin film deposition on the base 2 within the reaction chamber 1, the shielding member 32 can be moved to close the first transfer port 11, preventing process gases from entering the transfer channel 41 located outside the reaction chamber 1 through the first transfer port 11 and contaminating the inner wall of the transfer channel 41. This prevents contamination particles from falling onto the wafer surface during transfer, reducing the likelihood of wafer contamination and improving product yield.

[0021] Specifically, the wafer thin film deposition machine also includes a liner assembly 3, which is disposed inside the reaction chamber 1 and sleeved on the base 2. The liner assembly 3 includes the movable shielding member 32.

[0022] refer to Figure 1 As shown, in some embodiments, the inner liner assembly 3 further includes an inner liner ring 31 and a driver 33. The inner liner ring 31 is a hollow ring structure made of quartz. The inner liner ring 31 is disposed inside the reaction chamber 1 and surrounds the base 2. The sidewall of the inner liner ring 31 has a second conveying port 311 corresponding to the first conveying port 11, and the second conveying port 311 communicates with the first conveying port 11. The blocking member 32 is movably disposed inside the second conveying port 311, and the driver 33 is connected to the blocking member 32 to drive the blocking member 32 to open or close the second conveying port 311.

[0023] In this embodiment, the sidewall of the inner liner ring 31 is provided with a second transfer port 311 corresponding to the first transfer port 11. Since the second transfer port 311 is connected to the first transfer port 11, the wafer needs to pass through the first transfer port 11 and the second transfer port 311 before entering the reaction chamber 1 during the transfer process. The shielding member 32 is movably disposed at the second transfer port 311. The driver 33 is a lifting mechanism, and the driving end of the driver 33 is connected to the shielding member 32. The driver 33 drives the shielding member 32 to move up and down, thereby opening or closing the second transfer port 311. Since the second transfer port 311 is connected to the first transfer port 11, closing the second transfer port 311 is equivalent to closing the first transfer port 11. This avoids the situation where the process gas in the reaction chamber 1 adheres to the second transfer port 311, the first transfer port 11, and the transfer channel 41 located outside the reaction chamber 1, forming contaminant particles that cannot be cleaned. The inner wall of the reaction chamber 1 and the shielding member 32 can be cleaned with purge gas (HCl) to remove contaminant particles, reducing the possibility of wafer contamination and improving product yield.

[0024] refer to Figure 1 , Figure 2 and Figure 3 As shown, in some specific embodiments, a groove 312 is provided at the bottom or top of the second conveying port 311. The groove 312 extends through the inner liner ring 31 from the bottom of the second conveying port 311, and the blocking member 32 is slidably disposed within the groove 312. The blocking member 32 has a blocking portion and a connecting portion. The blocking portion is adapted to the second conveying port 311 so that the blocking portion can block the second conveying port 311. The connecting portion extends from the bottom or top of the groove 312, and the driver 33 is located within the reaction chamber 1 and connected to the connecting portion.

[0025] When the second transfer port 311 needs to be closed during the thin film deposition process on the wafer, the driver 33 drives the shielding part to extend from the groove 312 to block the transfer channel 41, such as Figure 1 As shown. When it is necessary to open the second transmission port 311, the driver 33 drives the blocking part to retract into the slide groove 312, as shown. Figure 3 As shown.

[0026] In this embodiment, the chute 312 is disposed at the bottom of the second conveying port 311. By connecting the driver 33 to the connecting part of the shield 32, the driver 33 is used to drive the shield 32 to move up and down, thereby controlling the opening or closing of the second conveying port 311, so as to realize wafer conveying while avoiding the leakage of process gas during wafer reaction.

[0027] refer to Figure 3 As shown, in some embodiments, the driver 33 is preset with a first retraction distance. When the driver 33 drives the blocking part to retract into the slide groove 312 according to the first retraction distance until it stops, part of the blocking part protrudes from the inner sidewall of the bottom or top of the second conveying port 311.

[0028] In this embodiment, the driver 33 has a control program. By adjusting the parameters of the control program, the driver 33 has a first retraction distance. When the driver 33 drives the shielding part to retract into the chute 312 according to the first retraction distance, part of the shielding part will protrude from the inner sidewall of the bottom or top of the second conveying port 311 and will not completely retract into the chute 312, so as to form a step in the second conveying port 311 to block the contaminant particles in the transmission channel 41 outside the reaction chamber 1 from entering the reaction chamber 1, so as to ensure the cleanliness of the reaction chamber 1 and further improve the product yield.

[0029] In yet another embodiment of the present invention, a wafer thin film deposition system is provided, with reference to... Figure 4 As shown, the wafer thin film deposition system includes a wafer buffer stage 5, a connector 4, and the wafer thin film deposition stage 6 provided in the above embodiment. The connector 4 has a transmission channel 41, a first connection end 42, and a second connection end 43. The transmission channel 41 is a long and narrow wafer transmission channel, which is axially oriented along the connector 4 and connects the first connection end 42 and the second connection end 43. The first connection end 42 corresponds to the first transfer port 11 and is connected to the reaction chamber 1. The second connection end 43 is connected to the wafer buffer stage 5. The wafer buffer stage 5 is used to temporarily store wafers and can transmit the wafers through the transmission channel 41 to the reaction chamber 1 for reaction, or transfer the processed wafers in the reaction chamber 1 to the wafer buffer stage 5, and then transfer them to the next processing station via the wafer buffer stage 5.

[0030] In this embodiment, by using the wafer thin film deposition machine 6 provided by the present invention in the wafer thin film deposition system, process gases are prevented from entering the transmission channel 41 and depositing contaminants in the transmission channel 41, thereby preventing contaminant particles in the transmission channel 41 from falling onto the wafer surface during wafer transfer and improving product yield.

[0031] refer to Figures 4 to 6As shown, in some embodiments, the wafer thin film deposition system further includes a gas splitter 7. A mounting groove is formed at the top of the transmission channel 41, and the gas splitter 7 is disposed within the mounting groove. One side wall of the gas splitter 7 has a first exhaust port 721, and the other side wall has a second exhaust port 722. The first exhaust port 721 sprays air towards the first connection end 42, and the second exhaust port 722 blows air towards the bottom of the transmission channel 41 to form an air curtain, which can separate the transmission channel 41.

[0032] In this embodiment, by providing the gas diversion component 7 within the transmission channel 41, the first exhaust port 721 on the gas diversion component 7 blows air towards the direction of the first connecting end 42 to prevent process gas in the reaction chamber 1 from overflowing from the edges of the shielding component 32 and the second conveying port 311, thereby ensuring the cleanliness of the transmission channel 41. Furthermore, the second exhaust port 722 on the gas diversion component 7 blows air towards the bottom of the transmission channel 41 to form an air curtain. This air curtain divides the transmission channel 41 into two sections, preventing contaminant particles from the wafer cache stage 5 from entering the reaction chamber 1 through the transmission channel 41, further ensuring the cleanliness of the reaction chamber 1 and significantly improving product yield.

[0033] In some specific embodiments, the gas splitter 7 has an inlet pipe 71 and a splitter body 72. The splitter body 72 has a first exhaust channel 723 and a second exhaust channel 724 along its axial direction. The splitter body 72 has a first sidewall and a second sidewall, the first sidewall and the second sidewall being adjacent and perpendicular to each other. A plurality of first exhaust holes 721 are spaced apart on the first sidewall, communicating with the first exhaust channel 723. A plurality of second exhaust holes 722 are spaced apart on the second sidewall, communicating with the second exhaust channel 724. The splitter body 72 also has an inlet channel. One end of the inlet pipe 71 communicates with the first exhaust channel 723 and the second exhaust channel 724 through the inlet channel, and the other end of the inlet pipe 71 is connected to an external gas supply source for receiving purge gas.

[0034] refer to Figures 4 to 6As shown, in some embodiments, the inner liner assembly 3 includes an inner liner ring 31 and a driver 33. The inner liner ring 31 is disposed within the reaction chamber 1 and surrounds the base 2. The sidewall of the inner liner ring 31 has a second conveying port 311 corresponding to the first conveying port 11. The second conveying port 311 communicates with the first conveying port 11. The shielding member 32 is movably disposed within the second conveying port 311. The driver 33 is connected to the shielding member 32. The driver 33 also has a preset first extension distance. When the driver 33 drives the shielding member 32 to extend outward from the slide groove 312 according to the first extension distance until it stops, there is a gap between the top of the shielding member 32 and the top inner sidewall of the second conveying port 311. The first exhaust port 721 blows air into the gap.

[0035] It should be noted that after the wafer completes the thin film deposition reaction in the reaction chamber 1, a pressure inconsistency may occur between the reaction chamber 1 and the transfer channel 41, making it difficult for the shielding member 32 to retract and affecting the wafer transfer. To solve this problem, in this embodiment, the driver 33 is preset with a first extension distance. Before the wafer needs to undergo the thin film deposition reaction, the driver 33 drives the shielding member 32 to extend outward from the slide groove 312 according to the first extension distance until there is a relatively narrow gap between it and the top inner wall of the second transfer port 311, thereby connecting the reaction chamber 1 and the transfer channel 41. This avoids a large pressure difference between the reaction chamber 1 and the transfer channel 41, which could prevent the shielding member 32 from retracting. Furthermore, to prevent the process gas in the reaction chamber 1 from overflowing from the gap, the first exhaust port 721 continuously blows air into the gap during wafer processing to ensure the cleanliness of the transfer channel 41.

[0036] In some embodiments, the width of the blowing area formed by the blowing of the plurality of first exhaust holes 721 is greater than the width of the gap.

[0037] It is understood that in this embodiment, by setting the width of the purging area formed by the purging of a plurality of first exhaust holes 721 to be greater than the width of the gap, the reliability of the first exhaust holes 721 purging the gap is ensured, so as to avoid the process gas in the reaction chamber 1 from overflowing and contaminating the transmission channel 41.

[0038] In some embodiments, the first connection end 42 is detachably connected to the reaction chamber 1, and the second connection end 43 is detachably connected to the wafer cache stage 5.

[0039] In this embodiment, by detachably connecting the first connection end 42 to the reaction chamber 1 and detachably connecting the second connection end 43 to the wafer cache stage 5, the installation and cleaning of the wafer thin film deposition system are facilitated.

[0040] The above description is merely a specific implementation of the embodiments of this application, but the protection scope of the embodiments of this application is not limited thereto. Any changes or substitutions within the technical scope disclosed in the embodiments of this application should be covered within the protection scope of the embodiments of this application. Therefore, the protection scope of the embodiments of this application should be determined by the protection scope of the claims.

Claims

1. A wafer thin film deposition machine, characterized in that, include: The reaction chamber has a first conveying port on its side wall, which connects the interior of the reaction chamber with the outside. The wafer enters and exits the reaction chamber through the first transfer port; A base, located within the reaction chamber, is used to support the wafer; A movable shield, which can be used to open or close the first conveyor port.

2. The wafer thin film deposition machine according to claim 1, characterized in that, It also includes an inner liner assembly disposed within the reaction chamber and fitted onto the base, the inner liner assembly including the movable shielding member.

3. The wafer thin film deposition machine according to claim 2, characterized in that, The liner assembly also includes a liner ring and a driver; The inner liner ring is disposed inside the reaction chamber and surrounds the base. The side wall of the inner liner ring is provided with a second conveying port corresponding to the first conveying port. The second conveying port is connected to the first conveying port. The shielding component is movably disposed within the second conveying port; The driver is connected to the shield and is used to drive the shield to open or close the second transmission port.

4. The wafer thin film deposition apparatus according to claim 3, characterized in that, A groove is provided at the bottom or top of the second conveying port, and the groove passes through the inner liner ring from the bottom of the second conveying port; The shielding member is slidably disposed in the chute. The shielding member has a shielding part and a connecting part. The shielding part is adapted to the second conveying port, and the connecting part extends from the bottom or top of the chute. The driver is located inside the reaction chamber and is connected to the connecting part; When it is necessary to close the second transmission port, the driver causes the blocking part to extend to block the second transmission port; when it is necessary to open the second transmission port, the driver causes the blocking part to retract into the chute.

5. The wafer thin film deposition machine according to claim 4, characterized in that, The driver is preset with a first retraction distance; When the driver retracts the blocking part into the chute until it stops according to the first retraction distance, a portion of the blocking part protrudes from the inner sidewall of the bottom or top of the second conveying port.

6. A wafer thin film deposition system, characterized in that, include: Wafer cache machine, connector, and wafer thin film deposition machine according to any one of claims 1 to 5; The connector has a transmission channel, a first connection end, and a second connection end. The transmission channel is opened along the axial direction of the connector and connects the first connection end and the second connection end. The first connection end is connected to the reaction chamber, and the second connection end is connected to the wafer cache stage. The wafer cache station is used to store wafers and can transfer the wafers to the reaction chamber through the transmission channel.

7. The wafer thin film deposition system according to claim 6, characterized in that, It also includes gas splitters; The top of the transmission channel is provided with a mounting slot; The gas diversion component is disposed in the mounting groove. The gas diversion component has a first exhaust port and a second exhaust port. The first exhaust port sprays air towards the first connection end, and the second exhaust port blows air towards the bottom of the transmission channel to form an air curtain, which separates the transmission channel.

8. The wafer thin film deposition system according to claim 7, characterized in that, The gas splitter has an inlet pipe and a splitter body; The diversion body has a first exhaust channel and a second exhaust channel along its axial direction. The diversion body has a first sidewall and a second sidewall. The first sidewall and the second sidewall are adjacent to each other and perpendicular to each other. A plurality of first exhaust holes are provided at intervals on the first sidewall. The first exhaust holes are connected to the first exhaust channel. A plurality of second exhaust holes are provided at intervals on the second sidewall. The second exhaust holes are connected to the second exhaust channel. One end of the intake pipe is connected to the first exhaust channel and the second exhaust channel, and the other end of the intake pipe is used to connect to the purging gas.

9. The wafer thin film deposition system according to claim 7 or 8, characterized in that, The liner assembly includes a liner ring and a drive; The inner liner ring is disposed inside the reaction chamber and surrounds the base. The side wall of the inner liner ring is provided with a second conveying port corresponding to the first conveying port. The second conveying port is connected to the first conveying port. The shielding member is movably disposed within the groove of the second conveying port; The driver is connected to the shielding member, and the driver is also preset with a first extension distance; When the driver drives the shield to extend outward from the chute until it stops according to the first extension distance, there is a gap between the top of the shield and the top inner wall of the second conveying port, and the first exhaust hole blows air into the gap.

10. The wafer thin film deposition system according to claim 9, characterized in that, The width of the blowing area formed by the blowing of several of the first exhaust holes is greater than the width of the gap.

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