RF sputtering of multiple electrodes with optimized plasma coupling by implementation of capacitive and inductive components

Abstract

An apparatus includes a vacuum chamber configured to create a substantially atmospheric vacuum environment for plasma processing; a radio frequency (RF) power source external to the vacuum chamber; an RF matching network operably coupled to the RF power source; and a plurality of electrodes mounted within the vacuum chamber, the plurality of electrodes configured to receive an RF power signal from an RF power source through the RF matching network. During sputtering operation, RF power signals are simultaneously delivered to the plurality of electrodes. The plurality of electrodes and the set of electrical components are operable to manage inductive and capacitive reactance for coupling RF power signals to provide more desirable plasma coupling during sputtering operations.

Description

Cross-references to related applications

[0001] This application claims priority to U.S. Application No. 18 / 366,437, filed August 7, 2023, which is incorporated herein by reference in its entirety. Background Technology

[0002] Magnetron sputtering of targets is well-known and widely used to produce a wide variety of thin films on various substrates. In magnetron sputtering, the material to be sputtered is formed on a planar or tubular target structure. A magnetron assembly is positioned near or within the target structure and supplies a magnetic field, ensuring sufficient magnetic flux at the outer surface of the target structure for the sputtering process.

[0003] Planar magnetron RF sputtering of targets is a known technique. For example, sputtering methods involving the simultaneous application of DC and RF power have been developed, where the superposition of the two power supplies is used for planar target structures. Additionally, multiple connections for a single rotatable magnetron RF sputtering of a target are also known.

[0004] RF magnetron sputtering implemented in current systems utilizes small-scale laboratory-scale magnetrons or planar magnetrons and is limited by the inhomogeneity of the deposited layer. For example, applying RF power to a rotating cathode can result in unacceptable inhomogeneities in the deposited film thickness.

[0005] Therefore, there is a need to improve the application of RF power to rotating sputtering cathodes to address the problem of unevenness in deposited thin films. Summary of the Invention

[0006] An apparatus includes a vacuum chamber configured to generate a substantially atmospheric vacuum environment for plasma processing; a radio frequency (RF) power source located outside the vacuum chamber; an RF matching network operatively coupled to the RF power source; and a plurality of electrodes mounted within the vacuum chamber, configured to receive an RF power signal from the RF power source via the RF matching network. During sputtering operations, the RF power signal is simultaneously delivered to the plurality of electrodes. The plurality of electrodes and a set of electrical components are operable to manage inductive and capacitive reactances for coupling the RF power signal to provide optimized plasma coupling during sputtering operations. Attached Figure Description

[0007] The features of the invention will become apparent to those skilled in the art from the following description, with reference to the drawings. It should be understood that the drawings depict only typical embodiments and are therefore not intended to be limiting in scope; the invention will be described with additional specificity and detail using the accompanying drawings, in which: Figure 1This is a schematic diagram of an RF sputtering apparatus using multiple electrodes and an implemented reactive component, according to one embodiment; and Figure 2 This is a schematic diagram of an RF sputtering device using multiple electrodes and implemented reactive components according to another embodiment. Detailed Implementation

[0008] In the following detailed description, embodiments are described in sufficient detail to enable those skilled in the art to practice the invention. It should be understood that other embodiments can be utilized without departing from the scope of the invention. Therefore, the following detailed description should not be considered limiting.

[0009] This document describes an apparatus and method for RF sputtering with optimized inductive and capacitive coupling. The apparatus can utilize multiple electrodes (such as magnetron electrodes) and reactive components (such as inductors and capacitors) to optimize RF power coupling for sputtering applications. In some embodiments, the magnetron electrodes may have a magnetic field generated by an electric coil of a permanent magnet or wire.

[0010] This method optimizes the RF power coupling with the plasma between capacitive and inductive properties, creating a more desirable impedance and power distribution. These improvements in characteristics can lead to more desirable thin film properties and deposition profiles and / or rates. This is achieved through an operating space configured to develop the desired ion energy and flux.

[0011] In one embodiment, the device has a configuration utilizing multiple electrodes with multiple connections and integrates an RF matching network and any necessary electrical balancing components. This ensures controllable power delivery to each magnetron electrode.

[0012] This device offers the advantage of utilizing unique power coupling and allowing modification of plasma coupling. It also provides the ability to combine various power sources, such as various RF, intermediate frequency AC (MF), DC, or pulsed DC. These techniques have proven effective for controlling deposition rates and film properties.

[0013] The electrodes used in this device are made of materials suitable for transmitting power from DC, pulsed DC, MF, or RF power sources. Power delivery can be sinusoidal, square, or other waveforms as determined to be beneficial for plasma processes. The shape, cross-section, and surface finish of the electrodes will be determined by the properties required for the application. This may include mechanical strength, thermal conductivity, target bonding or adhesion, or other such requirements. The electrodes can function as anodes, cathodes, or as isolating elements within the processing chamber.

[0014] To enhance process uniformity or rate, electrodes can also have magnetic field enhancement by utilizing permanent magnets or electromagnetically generated fields. Depending on their function in the circuit, electrodes can be isolated from or grounded. Cooling of the electrodes can be achieved by radiation or conduction to a liquid such as water. In one embodiment, the device utilizes a rotatable magnetron as an electrode, which creates plasma to sputter material from a target.

[0015] Further details of various implementation schemes are described below with reference to the drawings.

[0016] Figure 1 An apparatus 100 for RF sputtering according to one embodiment is shown, which manages voltage and current, capacitive and inductive reactance to obtain better process and film characteristic results. Apparatus 100 includes a vacuum chamber 110 configured to create a substantially atmospheric vacuum environment 112 for plasma processing. The vacuum environment 112 includes selected gases that create desired sputtering conditions and properties of the deposited material.

[0017] Multiple electrodes (such as a first electrode 120 and a second electrode 130) are mounted within a vacuum chamber 110 for exposure to a vacuum environment 112. In some embodiments, electrodes 120 and 130 are magnetron electrodes rotatably mounted in series within the vacuum chamber 110. For example, electrodes 120 and 130 may each include a rotating magnetron assembly comprising a rotatable target barrel housing the magnetron. In other embodiments, electrodes 120 and 130 may each include a planar magnetron assembly. Electrodes 120 and 130 are selected to generate a desired magnetic field for the target material to optimize the sputtering process.

[0018] like Figure 1 As shown, the first electrode 120 has a first coupling terminal 122 and an opposite second coupling terminal 124. The second electrode 130 has a first coupling terminal 132 and an opposite second coupling terminal 134. A first coupling device 140 is electrically connected to the first electrode 120 through the first coupling terminal 122, and a second coupling device 142 is electrically connected to the first electrode 120 through the second coupling terminal 124. A third coupling device 144 is electrically connected to the second electrode 130 through the first coupling terminal 132, and a fourth coupling device 146 is electrically connected to the second electrode 130 through the second coupling terminal 134.

[0019] In one embodiment, the first coupling device 140 may include a first end block, and the second coupling device 142 may include a second end block. In this embodiment, the first coupling end 122 and the second coupling end 124 of the first electrode 120 are connected to the first end block and the second end block, respectively, via respective vacuum-sealed arrangements. Additionally, the third coupling device 144 may include a third end block, and the fourth coupling device 146 may include a fourth end block. The first coupling end 132 and the second coupling end 134 of the second electrode 130 are connected to the third end block and the fourth end block, respectively, via respective vacuum-sealed arrangements. As used herein, the term "end block" refers to a coupling device that provides one or more functions, including rotation, power, bearing, rotary vacuum seal, or rotary water seal. The vacuum-sealed arrangements allow connection between internal and external components of the vacuum chamber 110.

[0020] In one exemplary embodiment, a first coupling device 140 is a first end block located outside the vacuum chamber 110 on a first side of the vacuum chamber 110, and a second coupling device 142 is a second end block located outside the vacuum chamber 110 on an opposite second side of the vacuum chamber 110. In this embodiment, a first electrode 120 is rotatably coupled to the first end block via a first coupling end 122 and rotatably coupled to the second end block via a second coupling end 124. Additionally, a third coupling device 144 is a third end block located outside the vacuum chamber 110 on a first side of the vacuum chamber 110, and a fourth coupling device 146 is a fourth end block located outside the vacuum chamber 110 on an opposite second side of the vacuum chamber 110. An electrode 130 is rotatably coupled to the third end block via a first coupling end 132 and rotatably coupled to the fourth end block via a second coupling end 134.

[0021] The device 100 also utilizes a plurality of electrical components 152, 154 and 156. Electrical components 152, 154 and 156 may include, for example, one or more capacitors, inductors or resistors configured to optimize power delivery to electrodes 120 and 130.

[0022] Device 100 includes at least one RF power source 160 and an RF matching network 162 coupled to the RF power source 160. Electrodes 120 and 130 are configured to receive RF power signals from the RF power source 160 via the RF matching network 162. In one embodiment, the RF matching network 162 is operatively coupled to electrode 120 via a first coupling device 140 to provide an RF power signal to electrode 120. Electrical component 152 is coupled between a second coupling device 142 and a fourth coupling device 146 such that an RF power signal is also simultaneously delivered to electrode 130.

[0023] In one embodiment, electrical component 154 is coupled between third coupling device 144 and grounding connection 166 within vacuum chamber 110. Electrical component 156 may be coupled between first coupling device 140 and third coupling device 144.

[0024] In another embodiment, electrical component 156 may be grounded at one terminal and configured to act as an additional electrode within the vacuum chamber 110. Similarly, electrical component 152, coupled between the second coupling device 142 and the fourth coupling device 146, may be configured as an electrode, such as a magnetron, designed to enhance plasma coupling within the vacuum chamber 110. This design is configured to improve the impedance, uniformity, and / or deposition rate of the device 100. Furthermore, this design may require additional matching network components, such as capacitors or inductors, to optimize power coupling and plasma performance.

[0025] In some embodiments, electrodes 120 and 130 may each be a single continuous electrode. In alternative embodiments, electrodes 120 and 130 may each be implemented using several discrete portions instead of a single continuous electrode.

[0026] In various implementations, a power delivery device may be employed to deliver RF power to electrodes 120 and 130. The RF power configuration manages the inductive and capacitive reactance between electrodes 120 and 130 during operation to produce the desired sputtering process. The device 100 is configured to provide a power circuit that allows RF power signals to be delivered to electrodes 120 and 130 simultaneously during sputtering operation.

[0027] Figure 2 An apparatus 200 for RF sputtering according to another embodiment is shown, which manages inductive and capacitive reactance in plasma coupling. Apparatus 200 includes a vacuum chamber 210 configured to create a substantially atmospheric vacuum environment 212 for plasma processing.

[0028] Multiple electrodes (such as a first magnetron electrode 220 and a second magnetron electrode 230) are mounted within a vacuum chamber 210 for exposure to a vacuum environment 212. In some embodiments, the magnetron electrodes 220 and 230 are rotatably mounted in series within the vacuum chamber 210. For example, the magnetron electrodes 220 and 230 may each be part of a rotatable magnetron cathode assembly comprising a rotatable target housing a magnetron.

[0029] like Figure 2 As shown, the first magnetron electrode 220 has a first coupling terminal 222 and an opposite second coupling terminal 224. The second magnetron electrode 230 has a first coupling terminal 232 and an opposite second coupling terminal 234.

[0030] The first coupling device 240 is electrically connected to the first magnetron electrode 220 through the first coupling terminal 122, and the second coupling device 242 is electrically connected to the first magnetron electrode 220 through the second coupling terminal 224. The third coupling device 244 is electrically connected to the second magnetron electrode 230 through the first coupling terminal 232, and the fourth coupling device 246 is electrically connected to the second magnetron electrode 230 through the second coupling terminal 234.

[0031] In one embodiment, the first coupling device 240 may include a first end block, and the second coupling device 242 may include a second end block. In this embodiment, the first coupling end 222 and the second coupling end 224 of the first magnetron electrode 220 are respectively connected to the first end block and the second end block via respective vacuum-sealed arrangements. Additionally, the third coupling device 244 may include a third end block, and the fourth coupling device 246 may include a fourth end block. The first coupling end 232 and the second coupling end 234 of the second magnetron electrode 230 are respectively connected to the third end block and the fourth end block via respective vacuum-sealed arrangements.

[0032] In one exemplary embodiment, a first coupling device 240 is a first end block located outside the vacuum chamber 210 on a first side of the vacuum chamber 210, and a second coupling device 242 is a second end block located outside the vacuum chamber 210 on an opposite second side of the vacuum chamber 210. In this embodiment, a first magnetron electrode 220 is rotatably coupled to the first end block via a first coupling end 222 and rotatably coupled to the second end block via a second coupling end 224. Additionally, a third coupling device 244 is a third end block located outside the vacuum chamber 210 on a first side of the vacuum chamber 210, and a fourth coupling device 246 is a fourth end block located outside the vacuum chamber 210 on an opposite second side of the vacuum chamber 210. A second magnetron electrode 230 is rotatably coupled to the third end block via a first coupling end 232 and rotatably coupled to the fourth end block via a second coupling end 234.

[0033] The device 200 also utilizes a number of electrical components 252, 254 and 256. Electrical components 252, 254 and 256 may include, for example, one or more capacitors, inductors or resistors configured to optimize power delivery to magnetron electrodes 220 and 230.

[0034] Device 200 includes an RF power supply 260 and an RF matching network 262 coupled to the RF power supply 260. Magnetron electrodes 220 and 230 are configured to receive RF power signals from the RF power supply 260 via the RF matching network 262.

[0035] In one embodiment, RF matching network 262 is operatively coupled to first magnetron electrode 220 via first coupling device 240 to provide an RF power signal to first magnetron electrode 220. Electrical component 252 is coupled between second coupling device 242 and fourth coupling device 246 such that an RF power signal is also delivered to second magnetron electrode 230 simultaneously.

[0036] In one embodiment, electrical component 254 is coupled between third coupling device 244 and grounding connection 266 within vacuum chamber 210. Electrical component 256 may be coupled between first coupling device 240 and third coupling device 244.

[0037] In another embodiment, electrical component 256 may be grounded at one terminal and configured to act as an additional electrode within vacuum chamber 210. Similarly, electrical component 252, coupled between second coupling device 242 and fourth coupling device 246, may be configured as an electrode, such as a magnetron, designed to enhance plasma coupling within vacuum chamber 210. This design is configured to improve the impedance, uniformity, and / or deposition rate of device 200. Furthermore, this design may require additional matching network components, such as capacitors or inductors, to optimize power coupling and plasma performance.

[0038] In some embodiments, magnetron electrodes 220 and 230 may each be a single continuous electrode. In alternative embodiments, magnetron electrodes 220 and 230 may each be implemented as several discrete portions, rather than a single continuous electrode.

[0039] In various implementations, power delivery devices can be used to deliver RF power to the magnetron electrodes 220 and 230. During operation, the RF power provides magnetic flux between the magnetron electrodes 220 and 230 to produce the desired sputtering process.

[0040] Additionally, a set of low-frequency or DC power supplies is located outside the vacuum chamber 210. In one embodiment, the first low-frequency or DC power supply 280 is operatively connected to the first magnetron electrode 220 via a second coupling device 242, and the second low-frequency or DC power supply 282 is operatively connected to the second magnetron electrode 230 via a fourth coupling device 246.

[0041] Low-frequency or DC power supplies 280 and 282 are grounded and configured to modify the sputtering process rate and control plasma and film properties. For example, mixing an RF power signal with a low-frequency or DC power signal can provide a higher deposition rate, modify film properties, or both. During sputtering operation, the RF power signal and the low-frequency or DC power signal can be delivered to magnetron electrodes 220 and 230 simultaneously.

[0042] A set of filters can be coupled to the outputs of low-frequency or DC power supplies 280 and 282 as needed. In one embodiment, a first filter 284, such as a first low-pass filter, is coupled to the output of low-frequency or DC power supply 280, and a second filter 286, such as a second low-pass filter, is coupled to the output of low-frequency or DC power supply 282. The first filter 284 and the second filter 286 are configured to facilitate the combination of low-frequency or DC power with RF power delivery to magnetron electrodes 220 and 230.

[0043] The configuration of device 200 provides a power circuit that allows RF power signals to be delivered simultaneously to magnetron electrodes 220 and 230 during sputtering operations.

[0044] Exemplary Implementation Example 1 includes an apparatus comprising: a vacuum chamber configured to generate a substantially atmospheric vacuum environment for plasma processing; a radio frequency (RF) power source located outside the vacuum chamber; an RF matching network operatively coupled to the RF power source; and a plurality of electrodes mounted within the vacuum chamber, configured to receive an RF power signal from the RF power source via the RF matching network; wherein, during sputtering operations, the RF power signal is simultaneously delivered to the plurality of electrodes; wherein the plurality of electrodes and a set of electrical components are operable to manage inductive and capacitive reactances for coupling the RF power signal, thereby providing more desired plasma coupling during sputtering operations.

[0045] Example 2 includes the device described in Example 1, wherein each of the plurality of electrodes includes a rotating magnetron assembly, the rotating magnetron assembly including a rotatable target cylinder that houses the magnetron.

[0046] Example 3 includes the device described in Example 1, wherein each of the plurality of electrodes includes a planar magnetron assembly.

[0047] Example 4 includes the device described in any one of Examples 1 to 2, wherein the plurality of electrodes include a first rotating magnetron assembly and a second rotating magnetron assembly mounted in series within a vacuum chamber.

[0048] Example 5 includes the device described in Example 4, wherein: the first rotating magnetron assembly includes a first coupling end and an opposite second coupling end; and the second rotating magnetron assembly includes a first coupling end and an opposite second coupling end.

[0049] Example 6 includes the device described in Example 5, and the device further includes: a first coupling device electrically connected to a first coupling end of a first rotating magnetron assembly; a second coupling device electrically connected to a second coupling end of the first rotating magnetron assembly; a third coupling device electrically connected to a first coupling end of a second rotating magnetron assembly; and a fourth coupling device electrically connected to a second coupling end of the second rotating magnetron assembly.

[0050] Example 7 includes the device described in Example 6, wherein: the first coupling device includes a first end block, and the second coupling device includes a second end block; wherein the first coupling end and the second coupling end of the first rotating magnetron assembly are respectively connected to the first end block and the second end block through their respective vacuum-sealed arrangements.

[0051] Example 8 includes the device described in Example 7, wherein: the third coupling device includes a third end block, and the fourth coupling device includes a fourth end block; wherein the first coupling end and the second coupling end of the second rotating magnetron assembly are respectively connected to the third end block and the fourth end block through their respective vacuum-sealed arrangements.

[0052] Example 9 includes the device described in Example 8, wherein an RF matching network is operatively coupled to a first rotating magnetron assembly via a first end block to provide an RF power signal to the first rotating magnetron assembly.

[0053] Example 10 includes the device described in Example 9, and the device further includes a first electrical component coupled between a first end block and a fourth end block, such that an RF power signal is simultaneously delivered to the second rotating magnetron assembly.

[0054] Example 11 includes the device described in Example 10, and the device further includes a second electrical component coupled between the third end block and a grounding connector within the vacuum chamber.

[0055] Example 12 includes the device described in any one of Examples 1 to 11, the device further including a set of low-frequency or direct-current (DC) power supplies located outside the vacuum chamber and coupled to each of the plurality of electrodes respectively.

[0056] Example 13 includes the device described in Example 12, further comprising a set of filters respectively coupled to the outputs of a set of low-frequency or DC power supplies.

[0057] Example 14 includes an apparatus comprising: a vacuum chamber configured to generate a substantially atmospheric vacuum environment for plasma processing; an RF power supply located outside the vacuum chamber; an RF matching network operatively coupled to the RF power supply; a set of low-frequency or DC power supplies located outside the vacuum chamber; and a plurality of magnetron electrodes rotatably mounted within the vacuum chamber, the plurality of magnetron electrodes being configured to receive RF power signals from the RF power supply via the RF matching network and low-frequency or DC power signals via the low-frequency or DC power supplies; wherein, during sputtering operations, the RF power signals and the low-frequency or DC power signals are simultaneously delivered to the plurality of magnetron electrodes; wherein, in order to couple the RF power signals and the low-frequency or DC power signals, the plurality of magnetron electrodes and a set of electrical components are operable to manage inductive and capacitive reactances for coupling the RF power signals to provide optimized plasma coupling during sputtering operations.

[0058] Example 15 includes the device described in Example 14, wherein the plurality of magnetron electrodes include a first rotating magnetron assembly and a second rotating magnetron assembly mounted in series within a vacuum chamber.

[0059] Example 16 includes the device described in Example 15, wherein: the first rotating magnetron assembly includes a first coupling end and an opposite second coupling end; and the second rotating magnetron assembly includes a first coupling end and an opposite second coupling end.

[0060] Example 17 includes the device described in Example 16, further comprising: a first coupling device electrically connected to a first coupling end of a first rotating magnetron assembly; a second coupling device electrically connected to a second coupling end of the first rotating magnetron assembly; a third coupling device electrically connected to a first coupling end of a second rotating magnetron assembly; and a fourth coupling device electrically connected to a second coupling end of the second rotating magnetron assembly.

[0061] Example 18 includes the device described in Example 17, wherein an RF matching network is operatively coupled to a first rotating magnetron assembly via a first coupling device to provide an RF power signal to the first rotating magnetron assembly.

[0062] Example 19 includes the device described in Example 18, wherein the low-frequency or DC power supply includes: a first low-frequency or DC power supply operably connected to a first rotating magnetron assembly via a second coupling device; and a second low-frequency or DC power supply operably connected to a second rotating magnetron assembly via a fourth coupling device.

[0063] Example 20 includes the device described in Example 19, the device further including: a first low-pass filter coupled to the output of a first low-frequency or DC power supply; and a second low-pass filter coupled to the output of a second low-frequency or DC power supply.

[0064] As will be understood from the foregoing, although specific embodiments have been described herein for illustrative purposes, various modifications may be made without departing from the scope of this disclosure. Therefore, the described embodiments should be considered in all respects as illustrative only and not restrictive. Furthermore, all changes within the equivalent meaning and scope of the claims will be included within their scope.

Claims

1. An apparatus, the apparatus comprising: A vacuum chamber configured to generate a substantially atmospheric vacuum environment for plasma processing; Radio frequency (RF) power supply located outside the vacuum chamber; An RF matching network, operatively coupled to the RF power supply; and Multiple electrodes are installed within the vacuum chamber, and the multiple electrodes are configured to receive RF power signals from the RF power source via the RF matching network; During the sputtering operation, the RF power signal is simultaneously delivered to the plurality of electrodes; The plurality of electrodes and a set of electrical components are operable to manage the inductive and capacitive reactance used to couple the RF power signal, thereby providing more desirable plasma coupling during the sputtering operation.

2. The device according to claim 1, wherein, Each of the plurality of electrodes includes a rotating magnetron assembly, the rotating magnetron assembly including a rotatable target cylinder that houses the magnetron.

3. The device according to claim 1, wherein, Each of the plurality of electrodes includes a planar magnetron assembly.

4. The device according to claim 1, wherein, The plurality of electrodes includes a first rotating magnetron assembly and a second rotating magnetron assembly mounted in series within the vacuum chamber.

5. The device according to claim 4, wherein: The first rotating magnetron assembly includes a first coupling end and an opposite second coupling end; and The second rotating magnetron assembly includes a first coupling end and an opposite second coupling end.

6. The device according to claim 5, further comprising: A first coupling device, wherein the first coupling device is electrically connected to the first coupling end of the first rotating magnetron assembly; The second coupling device is electrically connected to the second coupling end of the first rotating magnetron assembly; A third coupling device, which is electrically connected to the first coupling end of the second rotating magnetron assembly; and A fourth coupling device is electrically connected to the second coupling end of the second rotating magnetron assembly.

7. The device according to claim 6, wherein: The first coupling device includes a first end block, and The second coupling device includes a second end block; The first coupling end and the second coupling end of the first rotating magnetron assembly are respectively connected to the first end block and the second end block through their respective vacuum-sealed arrangements.

8. The device according to claim 7, wherein: The third coupling device includes a third end block, and The fourth coupling device includes a fourth end block; The first and second coupling ends of the second rotating magnetron assembly are respectively connected to the third and fourth end blocks via their respective vacuum-sealed arrangements.

9. The device according to claim 8, wherein, The RF matching network is operatively coupled to the first rotating magnetron assembly via the first end block to provide the RF power signal to the first rotating magnetron assembly.

10. The device of claim 9, further comprising a first electrical component coupled between the first end block and the fourth end block, such that the RF power signal is simultaneously delivered to the second rotating magnetron assembly.

11. The device of claim 10, further comprising a second electrical component coupled between the third end block and a grounding connector within the vacuum chamber.

12. The device of claim 1, further comprising a set of low-frequency or direct-current (DC) power supplies located outside the vacuum chamber and coupled to each of the plurality of electrodes.

13. The device of claim 12, further comprising a set of filters respectively coupled to the outputs of the set of low-frequency or DC power supplies.

14. An apparatus, the apparatus comprising: A vacuum chamber configured to generate a substantially atmospheric vacuum environment for plasma processing; Radio frequency (RF) power supply located outside the vacuum chamber; An RF matching network, the RF matching network being operatively coupled to the RF power source; A set of low-frequency or direct current (DC) power supplies located outside the vacuum chamber, and A plurality of magnetron electrodes are rotatably mounted within the vacuum chamber, the plurality of magnetron electrodes being configured to receive RF power signals from the RF power source via the RF matching network, and to receive low-frequency or DC power signals via a low-frequency or DC power source; During the sputtering operation, the RF power signal and the low-frequency or DC power signal are simultaneously delivered to the plurality of magnetron electrodes; In order to couple the RF power signal and the low-frequency or DC power signal, the plurality of magnetron electrodes and a set of electrical components are operable to manage the inductive and capacitive reactance for coupling the RF power signal, so as to provide optimized plasma coupling during the sputtering operation.

15. The device according to claim 14, wherein, The plurality of magnetron electrodes includes a first rotating magnetron assembly and a second rotating magnetron assembly mounted in series within the vacuum chamber.

16. The device according to claim 15, wherein: The first rotating magnetron assembly includes a first coupling end and an opposite second coupling end; and The second rotating magnetron assembly includes a first coupling end and an opposite second coupling end.

17. The apparatus of claim 16, further comprising: A first coupling device, wherein the first coupling device is electrically connected to the first coupling end of the first rotating magnetron assembly; The second coupling device is electrically connected to the second coupling end of the first rotating magnetron assembly; A third coupling device, which is electrically connected to the first coupling end of the second rotating magnetron assembly; and A fourth coupling device is electrically connected to the second coupling end of the second rotating magnetron assembly.

18. The device according to claim 17, wherein, The RF matching network is operatively coupled to the first rotating magnetron assembly via the first coupling device to provide the RF power signal to the first rotating magnetron assembly.

19. The device according to claim 18, wherein, The low-frequency or DC power supply includes: A first low-frequency or DC power supply, the first low-frequency or DC power supply being operatively connected to the first rotating magnetron assembly via the second coupling device; and A second low-frequency or DC power supply is operatively connected to the second rotating magnetron assembly via the fourth coupling device.

20. The apparatus of claim 19, further comprising: A first low-pass filter, the first low-pass filter being coupled to the output of the first low-frequency or DC power supply; as well as A second low-pass filter is coupled to the output of the second low-frequency or DC power supply.

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