A porous ceramic and a method for making the same
By introducing specific raw materials and controlling the sintering process into porous ceramic materials, the problem of insufficient strength in porous ceramics has been solved, achieving high strength and low thermal expansion under high porosity, which is suitable for semiconductor wafer processing.
CN122277230APending Publication Date: 2026-06-26国机金刚石(河南)有限公司 +1
View PDF 0 Cites 0 Cited by
Patent Information
- Application Number
- CN202610593183.5
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2026-04-30
- Publication Date
- 2026-06-26
Smart Images
Figure FT_1 
Figure FT_2 
Figure FT_3
Abstract
This invention discloses a porous ceramic for semiconductors and its preparation method, which is mainly composed of the following raw materials by weight percentage: 50-80% high-temperature calcined oxide, 1-10% boron oxide, 5-20% silicon dioxide, 5-15% calcium carbonate, 3-5% lithium carbonate, 0.5-1.5% yttrium oxide, 2-15% sodium carbonate, and 0.3-0.8% zirconium tungstate. The preparation steps of the porous ceramic include: 1) thoroughly mixing all raw materials; 2) forming the mixed powder particles into a green body in a mold; and 3) sintering the green body in an oxygen-rich atmosphere with an oxygen volume ratio ≥30%. This porous ceramic material has good air permeability, low density, high strength, and a low coefficient of thermal expansion, making it an excellent choice for preparing vacuum adsorption components for cutting ceramic substrates and wafer thinning equipment.
Need to check novelty before this filing date? Find Prior Art