Manufacturing ar metasurface lens wafer level bonding method, apparatus, device, and medium

Abstract

The application provides a manufacturing AR super-structured lens wafer-level bonding method, device, equipment and medium, comprising: preparing super-structured lens units in batches on a wafer substrate by using a semiconductor process; pretreating a micro LED chip wafer; using a high-precision wafer alignment device, taking alignment marks on the wafer as a reference, accurately aligning the prepared super-structured lens wafer and the pretreated micro LED chip wafer, so that each super-structured lens unit corresponds to a corresponding micro LED display screen unit one by one; under preset temperature, pressure and environmental atmosphere conditions, bonding the aligned super-structured lens wafer and the micro LED chip wafer to form an integrated optical module wafer; and cutting and separating the integrated optical module wafer to obtain a plurality of independent AR optical machine core units, so as to solve the problem of miniaturization, high efficiency, high precision and low cost manufacturing of the AR optical machine module under the premise of ensuring collimation performance.

Description

Technical Field

[0001] This invention relates to the field of augmented reality (AR) optomechanical technology, and in particular to a method, apparatus, equipment and medium for manufacturing AR metalenses at the wafer level. Background Technology

[0002] MicroLED technology, with its advantages of high brightness, high response speed, and long lifespan, has become the mainstream choice for core display components in AR optical engines, driving the development of AR devices towards higher definition and portability. Achieving precise collimation of the emitted light from microLEDs is a key technological aspect ensuring AR display effects and a core direction for the research and development of AR optical engine components. Currently, the market demand for AR devices is extending from professional to consumer levels, with users placing higher demands on thinner and lighter AR devices, display consistency, and mass production efficiency. This creates an urgent need for technological improvements in the structural design and manufacturing processes of core AR optical engine components.

[0003] In existing technologies, the core optical components of AR optical engines generally employ a combination of microLED displays and traditional multi-lens collimating systems. Specifically, this involves separately fabricating a microLED display unit and a collimating lens system composed of multiple lenses, then assembling them manually or automatically to form an AR optical engine unit with light collimation capabilities. Finally, this unit works in conjunction with an AR waveguide to couple and transmit light, achieving the AR display effect. This approach is currently the mainstream method for manufacturing AR optical engine components and has become a standard technical means to solve the problem of microLED light collimation.

[0004] However, the existing solutions mentioned above have many insurmountable technical defects in practical applications, which seriously restrict the technological upgrading and large-scale mass production of AR devices: First, the stacked structure of multiple lenses makes the optical components bulky and heavy, which cannot meet the development needs of AR devices to be thinner and lighter; Second, the assembly mode of individual components one by one results in extremely low production efficiency, which is difficult to adapt to the mass production rhythm of wafer-level microLED chips; Third, the alignment error in the assembly process can reach tens of micrometers, causing the collimation effect of the optomechanical unit to be unstable, affecting the clarity and consistency of AR display; Fourth, low assembly efficiency and high error rate drive up production and assembly costs, while the processing and storage of multiple lenses also increase additional cost expenditures.

[0005] Therefore, there is an urgent need for a wafer-level bonding method for manufacturing AR meta-lenses to solve the technical problem of miniaturizing, maximizing efficiency, achieving high precision, and reducing the cost of manufacturing AR optomechanical modules while ensuring collimation performance. Summary of the Invention

[0006] To overcome the problems existing in related technologies, this disclosure provides a wafer-level bonding method, apparatus, equipment and medium for manufacturing AR meta-lenses, so as to solve the technical problem of miniaturizing, maximizing efficiency, achieving high precision and low cost manufacturing of AR optomechanical modules while ensuring collimation performance.

[0007] This specification provides one or more embodiments of a wafer-level bonding method for manufacturing AR metalenses, including the following steps: Metalens units are mass-produced on a wafer substrate using semiconductor technology. These metalens units are used to achieve light collimation, and their array spacing and size match the multiple microLED display units integrated on the microLED chip wafer. The microLED chip wafer is pre-processed by cleaning the bonding surface, calibrating the flatness, and removing impurities and oxide layers from the bonding surface. Using a high-precision wafer alignment device, with the alignment marks on the wafer as a reference, the prepared meta-lens wafer is precisely aligned with the pre-processed microLED chip wafer, so that each meta-lens unit corresponds one-to-one with the corresponding microLED display unit. Under preset temperature, pressure and environmental conditions, the aligned meta-lens wafer and microLED chip wafer are bonded together, and the two wafers are tightly bonded together by the bonding layer to form an integrated optical module wafer. The integrated optical module wafer is cut and separated to obtain multiple independent AR optical engine core units. Each AR optical engine core unit includes a microLED display unit and a meta-lens unit bonded to it.

[0008] Preferably, the semiconductor process is any one of photolithography, etching, deposition, nanoimprinting, or 3D printing; The wafer substrate is any one of silicon-based, sapphire, polymer, or nitride materials.

[0009] Preferably, the ambient atmosphere is a vacuum environment or an inert gas protective environment; The bonding process can be any one of direct bonding, metal bonding, or dielectric bonding, and the dielectric bonding is achieved using a silicon oxide dielectric layer.

[0010] Preferably, the size of the meta-lens wafer and the microLED chip wafer is any one of 6 inches, 8 inches, or 12 inches; The array quantity and spacing of the meta-lens unit and the microLED display unit are adjusted according to the selected microLED chip wafer size.

[0011] Preferably, the method further includes the following steps: The AR optical engine core unit is directly assembled with the AR waveguide to complete the overall assembly of the AR optical engine.

[0012] This specification provides one or more embodiments of a wafer-level bonding apparatus for manufacturing AR metalenses, comprising: The meta-lens wafer fabrication module is used to mass-produce meta-lens units on a wafer substrate using semiconductor technology. The meta-lens units are used to achieve light collimation, and the array arrangement spacing and size are matched with the multiple microLED display units integrated in the array on the microLED chip wafer. The wafer preprocessing module, which cleans the bonding surface, calibrates the flatness, and removes impurities and oxide layers from the bonding surface, is used to preprocess the microLED chip wafer, clean the bonding surface, calibrate the flatness, and remove impurities and oxide layers from the bonding surface. A high-precision alignment module is used to precisely align the prepared meta-lens wafer with the pre-processed microLED chip wafer using a high-precision wafer alignment device and the alignment marks on the wafer as a reference, so that each meta-lens unit corresponds one-to-one with the corresponding microLED display unit. The wafer-level bonding module is used to bond aligned meta-lens wafers and microLED chip wafers under preset temperature, pressure and environmental conditions. The bonding layer tightly binds the two wafers together to form an integrated optical module wafer. The dicing module is used to dic and separate the integrated optical module wafer to obtain multiple independent AR optical engine core units. Each AR optical engine core unit includes a microLED display unit and a meta-lens unit bonded to it.

[0013] Preferably, the semiconductor process is any one of photolithography, etching, deposition, nanoimprinting, or 3D printing; The wafer substrate is any one of silicon-based, sapphire, polymer, or nitride materials.

[0014] Preferably, the ambient atmosphere is a vacuum environment or an inert gas protective environment; The bonding process can be any one of direct bonding, metal bonding, or dielectric bonding, and the dielectric bonding is achieved using a silicon oxide dielectric layer.

[0015] This specification provides a computer device according to one or more embodiments, including a memory, a processor, and a computer program stored in the memory and executable on the processor, wherein the processor executes the computer program to implement the wafer-level bonding method for manufacturing AR metalenses as described above.

[0016] This specification provides one or more embodiments of a computer-readable storage medium storing a computer program that, when executed by a processor, implements the steps of the above-described method for manufacturing AR metalenses at the wafer level.

[0017] This disclosure provides a wafer-level bonding method, apparatus, equipment, and medium for manufacturing AR metalenses. Its advantages include: using semiconductor processes to mass-produce metalens units; achieving light collimation with a single metalens unit, replacing the traditional multi-piece collimating lens system; significantly simplifying the optical structure; and effectively reducing the size of the core AR optomechanical components. Simultaneously, the array parameters of the metalens unit are precisely matched with the microLED display unit, laying the foundation for subsequent wafer-level precision integration. Furthermore, the semiconductor mass production process reduces the lens manufacturing cost. Pre-processing the microLED chip wafer, cleaning the bonding surface, calibrating its flatness, and removing impurities and oxide layers from the bonding surface, removes impurities and oxide layers, improving the cleanliness and flatness of the bonding surface, meeting the process requirements of wafer-level bonding, and avoiding problems such as loose bonding and impaired optical performance caused by bonding surface defects, ensuring the stability and reliability of subsequent bonding processes. High-precision wafer alignment equipment is used, with wafer alignment marks as a reference, to achieve precise alignment of the two wafers, ensuring the metalens unit and the microLED display unit are perfectly aligned. The one-to-one correspondence between units controls alignment errors to the micrometer level, significantly improving assembly accuracy compared to the low-precision mode of traditional single-unit assembly. This ensures consistent collimation of each optomechanical unit and avoids display blurring and light loss caused by alignment deviations. Under preset conditions, dual wafers are bonded together and an integrated optical module wafer is formed through the bonding layer. Wafer-level batch bonding replaces the traditional single-unit assembly mode, allowing the integration of all units on the entire wafer to be completed in a single operation. This results in an exponential increase in assembly efficiency, meeting the needs of large-scale mass production. The tight bonding effect enables the integrated integration of optical and display components, further reducing component size. The integrated optical module wafer is then diced to obtain multiple independent and complete AR optomechanical core units. Each unit is equipped with a microLED display unit and a meta-lens unit, eliminating the need for subsequent single-unit assembly processes and simplifying the subsequent production process. The diced core units can be directly adapted and assembled with AR waveguides, improving the overall assembly efficiency of the AR optomechanical system. At the same time, the standardized core units also facilitate unified quality control in production. Attached Figure Description

[0018] To more clearly illustrate the technical solutions in one or more embodiments of this specification or in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments recorded in this specification. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0019] Figure 1 A schematic flowchart illustrating a wafer-level bonding method for manufacturing AR metalenses, provided for one or more embodiments of this specification; Figure 2 A schematic diagram of the wafer-level bonding structure of an AR metalens provided in one or more embodiments of this specification; Figure 3 A schematic diagram of a wafer-level bonding device for manufacturing AR metalenses provided for one or more embodiments of this specification; Figure 4 This is a schematic diagram of the structure of a computer device provided for one or more embodiments of this specification.

[0020] Appendix Figure 1 Explanation of the labels: 1-microLED chip wafer; 2-megalenture wafer; 3-bonding layer; Detailed Implementation To enable those skilled in the art to better understand the technical solutions in one or more embodiments of this specification, the technical solutions in one or more embodiments of this specification will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of this specification, and not all of the embodiments. Based on one or more embodiments of this specification, all other embodiments obtained by those skilled in the art without creative effort should fall within the protection scope of this invention.

[0021] The present invention will now be described in detail with reference to specific embodiments and accompanying drawings.

[0022] Method Implementation Examples According to embodiments of the present invention, a wafer-level bonding method for manufacturing AR metalenses is provided, such as... Figure 1 The diagram shown is a schematic flowchart of the wafer-level bonding method for manufacturing AR metalenses provided in this embodiment. The wafer-level bonding method for manufacturing AR metalenses according to this embodiment includes the following steps: S110. Using semiconductor technology, meta-lens units are mass-produced on a wafer substrate. The optical parameters of the meta-lens units, such as focal length, aperture, and phase distribution, are precisely designed to ensure that a single meta-lens unit can completely replace the collimation function of a traditional multi-piece combined collimating lens system, thereby achieving light collimation. Furthermore, the array arrangement spacing and size match the multiple microLED display units integrated on the microLED chip wafer and arranged in an array according to a preset spacing pattern.

[0023] S120. Provide a chip wafer that has completed the manufacturing of a microLED display unit array, and pre-process the microLED chip wafer by cleaning the bonding surface, calibrating the flatness, and removing impurities and oxide layers from the bonding surface. Specifically, perform pre-processing such as cleaning and flatness calibration on the wafer surface, cleaning the bonding surface, calibrating the flatness, and removing impurities and oxide layers from the bonding surface to ensure the cleanliness and flatness of the bonding surface and meet the process requirements of wafer-level bonding.

[0024] S130. Using a high-precision wafer alignment device, with the alignment marks on the wafer as a reference, the prepared meta-lens wafer is precisely aligned with the pre-processed microLED chip wafer, so that each meta-lens unit corresponds one-to-one with the corresponding microLED display unit, and the alignment error is controlled at the micrometer level.

[0025] S140. Under preset temperature, pressure, and environmental conditions, the aligned metalens wafer and microLED chip wafer are bonded together. A bonding layer tightly integrates the two wafers, forming a microLED display unit-metalens unit integrated optical module wafer. For example... Figure 2 The diagram shown is a schematic of the wafer-level bonding structure of the AR metalens provided in this embodiment.

[0026] S150. The integrated optical module wafer is cut and separated to obtain multiple independent AR optical engine core units. Each AR optical engine core unit includes a microLED display unit and a meta-lens unit bonded to it.

[0027] It also includes the following steps: The AR optical engine core unit is directly assembled with the AR waveguide to complete the overall assembly of the AR optical engine.

[0028] The method provided in this embodiment uses semiconductor technology to mass-produce metalens units, achieving light collimation with a single metalens unit, replacing the traditional multi-piece combined collimating lens system. This significantly simplifies the optical structure and effectively reduces the size of the core AR optical engine components. Simultaneously, the array parameters of the metalens unit are precisely matched with the microLED display unit, laying the foundation for subsequent wafer-level precision integration. Furthermore, the semiconductor mass production process reduces the lens manufacturing cost. Pre-processing the microLED chip wafer cleans the bonding surface, calibrates flatness, and removes impurities and oxide layers. This removes impurities and oxide layers from the wafer bonding surface, improving its cleanliness and flatness, meeting the process requirements of wafer-level bonding, and avoiding problems such as loose bonding and impaired optical performance caused by bonding surface defects. This ensures the stability and reliability of subsequent bonding processes. High-precision wafer alignment equipment is used, with wafer alignment marks as a reference, to achieve precise alignment of the two wafers, ensuring a one-to-one correspondence between the metalens unit and the microLED display unit, controlling the alignment error within a specified range. At the micron level, compared to the low-precision mode of traditional single-unit assembly, the assembly accuracy is significantly improved, ensuring the consistency of collimation effect of each optomechanical unit and avoiding display blurring and light loss caused by alignment deviation. Under preset conditions, dual wafers are bonded and integrated into an optical module wafer through bonding layers. Wafer-level batch bonding replaces the traditional single-unit assembly mode, and the integration of all units on the entire wafer can be completed in one operation, resulting in an exponential increase in assembly efficiency, which is suitable for large-scale mass production. The tight bonding effect enables the integrated integration of optical components and display components, further reducing the component size. The integrated optical module wafer is cut and separated to directly obtain multiple independent and complete AR optomechanical core units. Each unit is equipped with a microLED display unit and a meta-lens unit, eliminating the need for subsequent single-unit assembly processes and simplifying the subsequent production process. The cut core units can be directly adapted and assembled with AR waveguides, improving the overall assembly efficiency of AR optomechanical systems. At the same time, the standardized core units also facilitate unified production quality control.

[0029] In one embodiment, the semiconductor process is any one of photolithography, etching, deposition, nanoimprinting, or 3D printing; the wafer substrate is any one of silicon-based, sapphire, polymer, or nitride materials.

[0030] The method provided in this embodiment offers a variety of semiconductor processes and wafer substrate material options to adapt to different production scenarios and application requirements. It has strong process compatibility and wide material adaptability, and the preparation scheme can be flexibly adjusted. It can not only ensure the collimating optical performance and batch preparation efficiency of the meta-lens unit, but also match the material characteristics of the microLED chip wafer, thereby improving the adaptability of wafer-level bonding and the feasibility of the overall process.

[0031] In one embodiment, the environment is a vacuum environment or an inert gas protective environment; the bonding process is any one of direct bonding, metal bonding or dielectric bonding, and the dielectric bonding is achieved using a silicon oxide dielectric layer.

[0032] The method provided in this embodiment, with its vacuum or inert gas environment, can avoid oxidation and contamination of the wafer surface during bonding, ensuring the cleanliness and bonding effect of the bonding surface. The diverse bonding processes can be flexibly selected according to the wafer substrate material. The dielectric bonding of the silicon oxide dielectric layer has strong compatibility, and all types of bonding methods can ensure the strength, stability, and optical transmittance of the inter-wafer bonding, improving the adaptability and reliability of the wafer-level bonding process.

[0033] In one embodiment, the size of the meta-lens wafer and the microLED chip wafer is any one of 6 inches, 8 inches, or 12 inches; the array arrangement and spacing of the meta-lens unit and the microLED display unit are adjusted according to the selected microLED chip wafer size.

[0034] The method provided in this embodiment supports multi-specification wafer adaptation, including 6-inch, 8-inch, and 12-inch wafers. It can flexibly adjust the array parameters of the meta-lens unit and the display unit according to the selected microLED chip wafer size, ensuring a precise one-to-one match between the two. This adapts to different scale production needs, improves the versatility and flexibility of the process, and meets the batch manufacturing requirements under different capacity planning.

[0035] Device Examples According to embodiments of the present invention, a wafer-level bonding apparatus for manufacturing AR metalenses is provided, such as... Figure 3 The diagram shown is a schematic representation of the wafer-level bonding apparatus for manufacturing AR metalenses provided in this embodiment. The wafer-level bonding apparatus for manufacturing AR metalenses according to this embodiment includes: The metalens wafer fabrication module 31 is used to batch fabricate metalens units on a wafer substrate using semiconductor processes. These metalens units are used to achieve light collimation, and their array spacing and size match the multiple microLED display units integrated into the array on the microLED chip wafer. The semiconductor process can be any one of photolithography, etching, deposition, nanoimprinting, or 3D printing; the wafer substrate can be any one of silicon-based, sapphire, polymer, or nitride materials.

[0036] The wafer preprocessing module 32, which cleans the bonding surface, calibrates the flatness, and removes impurities and oxide layers from the bonding surface, is used to preprocess the microLED chip wafer by cleaning the bonding surface, calibrating the flatness, and removing impurities and oxide layers from the bonding surface.

[0037] The high-precision alignment module 33 is used to precisely align the prepared meta-lens wafer with the pre-processed microLED chip wafer using a high-precision wafer alignment device and the alignment marks on the wafer as a reference, so that each meta-lens unit corresponds one-to-one with the corresponding microLED display unit.

[0038] The wafer-level bonding module 34 is used to bond the aligned meta-lens wafer and microLED chip wafer under preset temperature, pressure, and ambient conditions. The bonding layer tightly bonds the two wafers together to form an integrated optical module wafer. The ambient environment is a vacuum environment or an inert gas protected environment. The bonding process can be any one of direct bonding, metal bonding, or dielectric bonding. The dielectric bonding uses a silicon oxide dielectric layer for bonding.

[0039] The dicing module 35 is used to dic and separate the integrated optical module wafer to obtain multiple independent AR optical engine core units. Each AR optical engine core unit includes a microLED display unit and a meta-lens unit bonded to it.

[0040] The apparatus provided in this embodiment includes a metalens wafer fabrication module 31 that uses semiconductor technology to mass-produce metalens units. Single-piece metalens units achieve light collimation, replacing traditional multi-piece collimating lens systems, significantly simplifying the optical structure and effectively reducing the size of the core AR optical engine components. Simultaneously, the array parameters of the metalens units are precisely matched with the microLED display unit, laying the foundation for subsequent wafer-level precision integration. Furthermore, the semiconductor mass production process reduces the lens fabrication cost. The wafer preprocessing module 32 preprocesses the microLED chip wafer, cleaning the bonding surface, calibrating its flatness, and removing impurities and oxide layers. This removes impurities and oxide layers from the wafer bonding surface, improving its cleanliness and flatness to meet wafer-level bonding process requirements. It avoids problems such as loose bonding and impaired optical performance caused by bonding surface defects, ensuring the stability and reliability of subsequent bonding processes. The high-precision alignment module 33 uses high-precision wafer alignment equipment and wafer alignment marks as a reference to achieve precise alignment of the two wafers, ensuring a one-to-one correspondence between the metalens units and the microLED display units. By controlling alignment errors to the micrometer level, the assembly accuracy is significantly improved compared to the low-precision mode of traditional single-unit assembly, ensuring the consistency of collimation effect of each optomechanical unit and avoiding display blurring and light loss caused by alignment deviations. The wafer-level bonding module 34 performs bonding processing on two wafers under preset conditions and forms an integrated optical module wafer through the bonding layer. Wafer-level batch bonding replaces the traditional single-unit assembly mode, and the integration of all units on the entire wafer can be completed in one operation. The assembly efficiency is improved exponentially, which is suitable for large-scale mass production. The tight bonding effect realizes the integrated integration of optical components and display components, further reducing the component size. The dicing module 35 dices and separates the integrated optical module wafer, which can directly obtain multiple independent and complete AR optomechanical core units. Each unit is equipped with a microLED display unit and a meta-lens unit, eliminating the need for subsequent single-unit assembly processes and simplifying the subsequent production process. The diced core units can be directly adapted and assembled with AR waveguides, improving the overall assembly efficiency of AR optomechanical systems. At the same time, the standardized core units are also conducive to the unified control of production quality.

[0041] The embodiments of the present invention are device embodiments corresponding to the above method embodiments. The specific operations of each module processing step can be understood with reference to the description of the method embodiments, and will not be repeated here.

[0042] like Figure 4 As shown, the present invention also provides a computer-readable storage medium having a computer program stored thereon. When the computer program is executed by a processor, it implements the wafer-level bonding method for manufacturing AR metalenses in the above embodiments, or when the computer program is executed by a processor, it implements the wafer-level bonding method for manufacturing AR metalenses in the above embodiments.

[0043] Those skilled in the art will understand that all or part of the processes in the methods of the above embodiments can be implemented by a computer program instructing related hardware. The computer program can be stored in a non-volatile computer-readable storage medium, and when executed, it can include the processes of the embodiments of the above methods. Any references to memory, storage, databases, or other media used in the embodiments provided in this application can include non-volatile and / or volatile memory. Non-volatile memory can include read-only memory (ROM), programmable ROM (PROM), electrically programmable ROM (EPROM), electrically erasable programmable ROM (EEPROM), or flash memory. Volatile memory can include random access memory (RAM) or external cache memory. By way of illustration and not limitation, RAM is available in various forms, such as static RAM (SRAM), dynamic RAM (DRAM), synchronous DRAM (SDRAM), dual data rate SDRAM (DDRSDRAM), enhanced SDRAM (ESDRAM), synchronous link DRAM (SLDRAM), Rambus direct RAM (RDRAM), direct memory bus dynamic RAM (DRDRAM), and memory bus dynamic RAM (RDRAM), etc.

[0044] The various embodiments in this specification are described in a progressive manner. Similar or identical parts between embodiments can be referred to mutually. Each embodiment focuses on describing the differences from other embodiments. In particular, for apparatus or system embodiments, since they are basically similar to method embodiments, the description is relatively simple; relevant parts can be referred to the descriptions in the method embodiments. The apparatus and system embodiments described above are merely illustrative. The units described as separate components may or may not be physically separate. The components shown as units may or may not be physical units; that is, they may be located in one place or distributed across multiple network units. Some or all of the modules can be selected to achieve the purpose of this embodiment according to actual needs. Those skilled in the art can understand and implement this without creative effort.

[0045] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, and not to limit them. Although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some or all of the technical features. These modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present invention, and the contents not described in detail in the specification of the present invention are known to those skilled in the art.

Claims

1. A wafer-level bonding method for manufacturing AR metalenses, characterized in that, Includes the following steps: Metalens units are mass-produced on a wafer substrate using semiconductor technology. These metalens units are used to achieve light collimation, and their array spacing and size match the multiple microLED display units integrated on the microLED chip wafer. The microLED chip wafer is pre-processed by cleaning the bonding surface, calibrating the flatness, and removing impurities and oxide layers from the bonding surface. Using a high-precision wafer alignment device, with the alignment marks on the wafer as a reference, the prepared meta-lens wafer is precisely aligned with the pre-processed microLED chip wafer, so that each meta-lens unit corresponds one-to-one with the corresponding microLED display unit. Under preset temperature, pressure and environmental conditions, the aligned meta-lens wafer and microLED chip wafer are bonded together, and the two wafers are tightly bonded together by the bonding layer to form an integrated optical module wafer. The integrated optical module wafer is cut and separated to obtain multiple independent AR optical engine core units. Each AR optical engine core unit includes a microLED display unit and a meta-lens unit bonded to it.

2. The wafer-level bonding method for manufacturing AR metalenses as described in claim 1, characterized in that, The semiconductor process is any one of photolithography, etching, deposition, nanoimprinting, or 3D printing. The wafer substrate is any one of silicon-based, sapphire, polymer, or nitride materials.

3. The wafer-level bonding method for manufacturing AR metalenses as described in claim 1, characterized in that, The environmental atmosphere is a vacuum environment or an inert gas protected environment; The bonding process can be any one of direct bonding, metal bonding, or dielectric bonding, and the dielectric bonding is achieved using a silicon oxide dielectric layer.

4. The wafer-level bonding method for manufacturing AR metalenses as described in claim 1, characterized in that, The size of the meta-lens wafer and the microLED chip wafer is any one of 6 inches, 8 inches or 12 inches; The array quantity and spacing of the meta-lens unit and the microLED display unit are adjusted according to the selected microLED chip wafer size.

5. The wafer-level bonding method for manufacturing AR metalenses as described in claim 1, characterized in that, It also includes the following steps: The AR optical engine core unit is directly assembled with the AR waveguide to complete the overall assembly of the AR optical engine.

6. A wafer-level bonding apparatus for manufacturing AR metalenses, characterized in that, include: The meta-lens wafer fabrication module is used to mass-produce meta-lens units on a wafer substrate using semiconductor technology. The meta-lens units are used to achieve light collimation, and the array arrangement spacing and size are matched with the multiple microLED display units integrated in the array on the microLED chip wafer. The wafer preprocessing module, which cleans the bonding surface, calibrates the flatness, and removes impurities and oxide layers from the bonding surface, is used to preprocess the microLED chip wafer, clean the bonding surface, calibrate the flatness, and remove impurities and oxide layers from the bonding surface. A high-precision alignment module is used to precisely align the prepared meta-lens wafer with the pre-processed microLED chip wafer using a high-precision wafer alignment device and the alignment marks on the wafer as a reference, so that each meta-lens unit corresponds one-to-one with the corresponding microLED display unit. The wafer-level bonding module is used to bond aligned meta-lens wafers and microLED chip wafers under preset temperature, pressure and environmental conditions. The bonding layer tightly binds the two wafers together to form an integrated optical module wafer. The dicing module is used to dic and separate the integrated optical module wafer to obtain multiple independent AR optical engine core units. Each AR optical engine core unit includes a microLED display unit and a meta-lens unit bonded to it.

7. The wafer-level bonding apparatus for manufacturing AR metalenses as described in claim 6, characterized in that, The semiconductor process is any one of photolithography, etching, deposition, nanoimprinting, or 3D printing. The wafer substrate is any one of silicon-based, sapphire, polymer, or nitride materials.

8. The wafer-level bonding apparatus for manufacturing AR metalenses as described in claim 6, characterized in that, The environmental atmosphere is a vacuum environment or an inert gas protected environment; The bonding process can be any one of direct bonding, metal bonding, or dielectric bonding, and the dielectric bonding is achieved using a silicon oxide dielectric layer.

9. A computer device comprising a memory, a processor, and a computer program stored in the memory and executable on the processor, characterized in that, When the processor executes the computer program, it implements the wafer-level bonding method for manufacturing AR metalenses as described in any one of claims 1 to 5.

10. A computer-readable storage medium storing a computer program, characterized in that, When the computer program is executed by a processor, it implements the steps of the wafer-level bonding method for manufacturing AR metalenses as described in any one of claims 1 to 5.

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