Gas inlet structure of MPCVD device

Abstract

The application discloses a kind of gas inlet structure of MPCVD equipment, including reaction chamber, detachable gas inlet disc is equipped in the reaction chamber, substrate table is equipped below the gas inlet disc, a plurality of gas inlet holes are opened on the gas inlet disc, closed uniform gas chamber is formed between the gas inlet disc and the top wall of reaction chamber, gas inlet passage is opened in the top of reaction chamber and is communicated with uniform gas chamber.The gas inlet structure of the MPCVD equipment of the application has the advantages of flexible airflow distribution adjustment, low development cost and short process debugging period.

Description

Technical Field

[0001] This invention relates to the field of semiconductor equipment technology, and in particular to an air intake structure for an MPCVD equipment. Background Technology

[0002] Microwave Plasma Chemical Vapor Deposition (MPCVD) is one of the important technologies for preparing high-quality single-crystal and polycrystalline diamond materials. Its basic principle is to use a microwave electric field to excite reactive gases under low-pressure conditions to form a high-density plasma. The active carbon groups and atomic hydrogen in the plasma then undergo a deposition reaction on the substrate surface to form a diamond film. Due to its advantages such as high deposition purity, good crystal quality, and strong process controllability, MPCVD technology is widely used in thermal management, optical windows, semiconductor devices, quantum detection, and other fields. With the increasing demand for electronic-grade diamond materials and large-size diamond substrates in end-use applications, the requirements for deposition uniformity and process stability in MPCVD equipment are also becoming increasingly stringent.

[0003] Once the manufacturing process is complete, the top air inlet structure of existing MPCVD equipment is usually fixed. The number, size, spatial distribution, and jet direction of the air inlets cannot be adjusted according to subsequent process requirements. Therefore, uneven airflow distribution inside the cavity is prone to occur during the deposition of diamond materials of different sizes. To improve the flow field distribution, it is usually only possible to redesign the cavity top cover or replace the entire cavity structure. This approach is not only costly to manufacture but also has a long process development cycle, failing to meet the current requirements for large-size, highly uniform, and multi-process compatible MPCVD diamond growth. Especially during the deposition of large-size diamonds, the uneven gas flow field distribution on the substrate stage surface leads to significant differences in plasma distribution, activated carbon source transport, and temperature field distribution, further causing problems such as uneven diamond deposition thickness, growth rate fluctuations, and inconsistent film quality. Summary of the Invention

[0004] The technical problem to be solved by the present invention is to overcome the shortcomings of the prior art and provide an air intake structure for MPCVD equipment that is flexible in airflow distribution adjustment, low in development cost and short in process debugging cycle.

[0005] To solve the above-mentioned technical problems, the present invention adopts the following technical solution: An air intake structure for an MPCVD device includes a reaction chamber, a detachable air intake plate is provided inside the reaction chamber, a substrate stage is provided below the air intake plate, multiple air intake holes are provided on the air intake plate, a closed gas equalization chamber is formed between the air intake plate and the top wall of the reaction chamber, and an air intake channel communicating with the gas equalization chamber is provided on the top of the reaction chamber.

[0006] As a further improvement to the above technical solution: The air inlet includes one or more of the following: circular, stepped, conical, and elongated.

[0007] Each of the air inlets is distributed in a multi-region gradient, annular partition, or asymmetric compensation manner.

[0008] The air intake is arranged at an angle toward the center of the air intake plate.

[0009] The radial inclination angle of the air inlet is α, which satisfies 10°≤α≤80°.

[0010] The air intake is offset along the tangent of the air intake disc.

[0011] The tangential deflection angle of the air inlet is β, which satisfies -60°≤β≤60°.

[0012] The air intake plate is divided into a central air supply area, an intermediate transition area, and an edge compensation area from the center to the edge. The air distribution chamber is correspondingly divided into a central air supply chamber, an intermediate transition air supply chamber, and an edge compensation air supply chamber. The air intake channel is provided in multiple ways, which respectively connect to the central air supply chamber, the intermediate transition air supply chamber, and the edge compensation air supply chamber.

[0013] The air intake plate is provided with multiple layers at intervals along the vertical direction. The uppermost air intake plate forms the gas equalization chamber between itself and the top wall of the reaction chamber, and the adjacent air intake plates form a closed cavity.

[0014] The reaction chamber includes an inner cavity wall and an outer cavity wall, with a water-cooled interlayer formed between the inner cavity wall and the outer cavity wall, and the gas equalization chamber formed between the air inlet plate and the inner cavity wall.

[0015] Compared with the prior art, the advantages of the present invention are as follows: 1. The air intake structure of the MPCVD equipment of the present invention, by setting a detachable air intake plate, allows for adjustment of the height, diameter, and air intake holes of the air intake plate according to the equipment size and process requirements, flexibly adjusting the airflow distribution mode. This effectively solves the problem of insufficient adaptability of traditional fixed air intake structures. When it is necessary to optimize the flow field under different substrate sizes or different process parameters, only the air intake plate with the corresponding parameters needs to be replaced. There is no need to reprocess the main body of the cavity, which can achieve flexible control of the airflow field inside the cavity, improve the airflow uniformity on the substrate stage surface, enhance the adaptability of the equipment to diamond material deposition under different sizes and different process conditions, reduce development costs, and shorten the process debugging cycle.

[0016] 2. The air intake structure of the MPCVD equipment of the present invention, by setting an air intake hole inclined towards the center of the air intake plate, can guide the process gas to converge towards the central area of ​​the substrate stage, reduce the diffusion of gas to the edge of the reaction chamber wall, effectively improve the deposition rate in the central area, and at the same time reduce the ineffective deposition of reaction gas on the chamber wall, thereby reducing the consumption of process gas.

[0017] 3. The air intake structure of the MPCVD equipment of the present invention, by setting an air intake hole offset along the tangential direction of the air intake plate, enables the process gas to form a swirling flow after flowing into the reaction chamber. This can effectively enhance the lateral flow capability of the process gas on the substrate surface, reduce the probability of forming local stagnant areas, improve the discharge efficiency of reaction by-products, achieve effective control of the flow field distribution, and significantly improve the uniformity of the flow field inside the cavity.

[0018] 4. The air intake structure of the MPCVD equipment of the present invention provides independent air supply to the central air supply area, the intermediate transition area and the edge compensation area by setting multiple air intake channels. That is, different areas are connected to independent air paths, which can realize zoned flow control. By adjusting the flow ratio of different areas, the flow field distribution on the substrate stage surface can be further optimized and the process adaptability to substrates of different sizes can be enhanced.

[0019] 5. The air intake structure of the MPCVD equipment of the present invention, by setting up a multi-layer air intake plate, can form a closed cavity between each air intake plate as a buffer cavity or pressure equalization cavity in addition to the uniform air chamber, so that the gas pressure entering each air intake hole is more uniform, further improving the uniformity of airflow inside the cavity and enhancing the adaptability to complex process conditions. Attached Figure Description

[0020] Figure 1 This is a schematic diagram of the air intake structure of the MPCVD equipment according to Embodiment 1 of the present invention.

[0021] Figure 2 This is a main sectional view of the air intake plate in the air intake structure of the MPCVD equipment according to Embodiment 1 of the present invention.

[0022] Figure 3 This is a front sectional view of the air intake disc in the air intake structure of the MPCVD equipment according to Embodiment 1 of the present invention.

[0023] Figure 4 This is a schematic diagram of the multi-region gradient distribution air intake disk in the air intake structure of the MPCVD equipment according to Embodiment 1 of the present invention.

[0024] Figure 5 This is a schematic diagram of the annular partitioned air intake disk in the air intake structure of the MPCVD equipment according to Embodiment 1 of the present invention.

[0025] Figure 6This is a schematic diagram of the asymmetric compensation distribution air intake disk in the air intake structure of the MPCVD equipment according to Embodiment 1 of the present invention.

[0026] Figure 7 This is a front view schematic diagram of the air inlet hole in the air inlet structure of the MPCVD equipment according to Embodiment 1 of the present invention.

[0027] Figure 8 This is a top view of the air inlet in the air inlet structure of the MPCVD equipment according to Embodiment 1 of the present invention.

[0028] Figure 9 It is a CFD simulation diagram of vertical air intake through evenly distributed air holes at the edge.

[0029] Figure 10 It is a CFD simulation diagram of vertical air intake with multi-region gradient distribution.

[0030] Figure 11 It is a CFD simulation diagram of a multi-region gradient distribution inclined air intake.

[0031] Figure 12 This is a front sectional view of the air intake disc in the air intake structure of the MPCVD equipment according to Embodiment 2 of the present invention.

[0032] Figure 13 This is a front sectional view of the air intake disc in the air intake structure of the MPCVD equipment according to Embodiment 3 of the present invention.

[0033] The labels in the diagram represent: 1. Reaction chamber; 11. Gas homogenization chamber; 12. Gas inlet channel; 13. Inner cavity wall; 14. Outer cavity wall; 15. Water-cooled jacket; 16. Sealed cavity; 2. Gas inlet plate; 21. Gas inlet hole; 22. Central gas supply area; 23. Intermediate transition area; 24. Edge compensation area; 3. Substrate stage; 4. Microwave power supply; 5. Waveguide system; 6. Gas path system; 7. Vacuum system. Detailed Implementation

[0034] The present invention will be further described in detail below with reference to the accompanying drawings and specific embodiments.

[0035] In the description of this invention, it should be understood that the terms "length", "width", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are only for the convenience of describing this invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this invention.

[0036] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of this invention, "a plurality of" means two or more, unless otherwise explicitly specified.

[0037] In this invention, unless otherwise explicitly specified and limited, the terms "assembly," "connection," "joining," and "fixing," etc., should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components. Those skilled in the art can understand the specific meaning of the above terms in this invention according to the specific circumstances.

[0038] Example 1: like Figures 1 to 11 As shown, the air intake structure of the MPCVD equipment in this embodiment includes a reaction chamber 1, a detachable air intake plate 2 is provided in the reaction chamber 1, a substrate stage 3 is provided below the air intake plate 2, a plurality of air intake holes 21 are provided on the air intake plate 2, a closed gas equalization chamber 11 is formed between the air intake plate 2 and the top wall of the reaction chamber 1, and an air intake channel 12 communicating with the gas equalization chamber 11 is provided on the top of the reaction chamber 1.

[0039] The air intake structure of the MPCVD equipment in this embodiment, by setting a detachable air intake plate 2, allows for adjustment of the height, diameter, and air intake holes 21 of the air intake plate 1 according to the equipment size and process requirements. This flexibly adjusts the airflow distribution, effectively solving the problem of insufficient adaptability of traditional fixed air intake structures. When it is necessary to optimize the flow field under different substrate sizes or different process parameters, only the air intake plate 1 with the corresponding parameters needs to be replaced. There is no need to reprocess the main body of the cavity, which can achieve flexible control of the airflow field inside the cavity, improve the airflow uniformity on the surface of the substrate stage 3, enhance the equipment's adaptability to diamond material deposition under different sizes and process conditions, reduce development costs, and shorten the process debugging cycle.

[0040] Furthermore, in this embodiment, the air intake plate 1 can adopt a quick-disassembly structure such as flange thread connection, snap-fit ​​connection, guide rail insertion or magnetic assisted fixation, and be connected and installed to the top wall of the reaction chamber 1. This makes it convenient for operators to quickly replace the air intake plate 2 with different air intake parameters according to actual needs. It is particularly suitable for scientific research equipment, multi-process development platforms and working conditions that require frequent switching of deposition conditions, and has high engineering application value and industrialization promotion prospects.

[0041] Preferably, in this embodiment, the air intake disc 1 is disc-shaped and made of stainless steel, which is simple and reliable in structure. Of course, in other embodiments, molybdenum, aluminum alloy, or other metal materials with corrosion resistance and high temperature resistance can also be used.

[0042] Furthermore, the air intake structure of the MPCVD equipment in this embodiment also includes a microwave power supply 4, a waveguide system 5, a gas path system 6, and a vacuum system 7. The gas path system 6 is connected to the air intake channel 12 and supplies process gases (e.g., H2, CH4, N2, CO2) to the reaction chamber 1. The vacuum system 7 is used to obtain a vacuum in the reaction chamber 1 and maintain the cavity gas pressure required for diamond deposition. During operation, the microwaves generated by the microwave power supply 4 enter the reaction chamber 1 through the waveguide system 5, forming a high-intensity electric field in the central region above the substrate stage 3. The process gases inside the reaction chamber 1 dissociate under the action of the microwave electric field and form plasma, ultimately achieving the deposition of diamond material above the substrate stage 3.

[0043] Furthermore, in this embodiment, the air inlet 21 is a circular hole. Circular holes are easy to manufacture, provide stable airflow within the hole, and have low pressure loss, facilitating a stable supply of process gas. Of course, in other embodiments, the air inlet 21 can also be composed of one or more of circular holes, stepped holes, tapered holes, and elongated holes. Different types of holes can have different effects on airflow velocity, gas diffusion capacity, and injection direction. For example, tapered holes can increase gas injection velocity and enhance gas renewal capacity, while also improving airflow directionality, thereby improving the gas supply effect in different areas of the substrate surface.

[0044] Furthermore, such as Figure 4 As shown, in this embodiment, each air inlet 21 is distributed in a multi-region gradient. This multi-region gradient distribution means that multiple rings of air inlets 21 are evenly distributed from the center to the edge of the air inlet disk 2. Compared to the existing technology of vertical air intake with evenly distributed air inlets at the edge, which only has a ring of evenly distributed air inlets 21 at the outer edge of the cavity, this increases the air supply to the central region, making the airflow intensity in the central region more consistent with that in the edge region, thereby improving the airflow uniformity across the entire surface of the substrate stage 3.

[0045] Specifically, such as Figure 9 As shown, in the existing technology of vertical air intake with evenly distributed vents at the edges, it can be seen that there is very little airflow above the substrate stage 3 in the center of the cavity, indicating that only a small amount of reactive gas reaches the central deposition area. Figure 10 As shown, by improving the edge-uniformly distributed pores to a multi-regional gradient distribution, it can be seen that the reactive gas in the central region of substrate stage 3 is significantly increased. Figure 11As shown, by changing the vertical air intake of the evenly distributed air holes at the edge to the inclined air intake, it can be seen that the reactive gas in the central region of the substrate stage 3 is further increased. This shows that the air intake structure of the MPCVD equipment in this embodiment can effectively optimize the flow field distribution above the substrate stage 3 by adjusting the distribution of the air intake holes 21 and the air intake direction, so that the reactive gas is more evenly and abundantly distributed on the entire surface of the substrate stage 3, thereby improving the uniformity and quality of diamond deposition.

[0046] Of course, in other embodiments, each air inlet 21 may also be distributed in a ring-shaped partition or in an asymmetrical compensation distribution.

[0047] like Figure 5 As shown, the air intake is distributed in a ring-shaped pattern, meaning that multiple rings of air intake holes 21 are distributed from the center to the edge of the air intake plate 2. However, the spacing between the air intake holes 21 in each ring varies. The distribution density of each ring of air intake holes can be adjusted according to the air supply needs of different areas, thereby achieving precise control of the air supply to different areas. Figure 6 As shown, the asymmetric compensation distribution means that the density of the air inlet 21 is adjusted in the corresponding offset direction according to the offset of the flow field or plasma shape inside the reaction chamber 1. This compensates for the airflow distribution deviation caused by the asymmetry of the cavity structure and adapts to the uniform gas supply requirements under special cavity structures or asymmetric microwave input scenarios. For example, for small-sized single-crystal diamond deposition, a centralized gas supply method in the central region can be adopted to improve the plasma density and deposition rate in the central region; for large-sized diamond deposition processes, a denser pore structure in the edge region can be adopted to improve the gas renewal efficiency in the edge region and alleviate the problem of low deposition rate in the edge region.

[0048] Furthermore, in this embodiment, the air inlet 21 is arranged at an angle toward the center of the air inlet plate 2. By setting the air inlet 21 at an angle toward the center of the air inlet plate 2, the process gas can be guided to converge toward the central region of the substrate stage 3, reducing the diffusion of gas toward the inner wall edge of the reaction chamber 1, effectively improving the deposition rate in the central region, and also reducing the ineffective deposition of reaction gas on the cavity wall, thus reducing the consumption of process gas.

[0049] Furthermore, in this embodiment, the radial tilt angle of the air inlet 21 is α, that is, the angle between the axis of the air inlet 21 and the normal of the air inlet disk 2, satisfying 10°≤α≤80°. If α is too small, the tilting and converging effect is not obvious, and it is difficult to effectively guide the gas to converge towards the central area; if α is too large, the airflow direction is too horizontal, which will cause the airflow jet direction to be too parallel to the surface of the substrate stage 3, which will easily scour the central area and affect the diamond film quality. Controlling the tilt angle within the above range can ensure the converging effect and avoid negative impacts on the deposition process.

[0050] Furthermore, in this embodiment, the air inlet 21 is offset along the tangential direction of the air inlet plate 2. By setting the air inlet 21 offset along the tangential direction of the air inlet plate 2, the process gas can form a swirling flow after flowing into the reaction chamber 1, which can effectively enhance the lateral flow capability of the process gas on the substrate surface, reduce the probability of the formation of local stagnant areas, improve the discharge efficiency of reaction by-products, achieve effective control of the flow field distribution, and significantly improve the uniformity of the flow field inside the cavity.

[0051] Furthermore, in this embodiment, the tangential deflection angle of the air inlet 21 is β, which is the angle between the projection of the axis of the air inlet 21 onto the lower surface of the air inlet disk 2 and the line connecting the center of the lower opening of the air inlet 21 and the center of the air inlet disk 2. The angle satisfies -60°≤β≤60°. The deflection angle can be adjusted according to the actual required swirl intensity to ensure that the flow field distribution meets the current process requirements.

[0052] Furthermore, in this embodiment, the reaction chamber 1 includes an inner cavity wall 13 and an outer cavity wall 14, with a water-cooled interlayer 15 formed between the inner cavity wall 13 and the outer cavity wall 14, and a uniform gas chamber 11 formed between the air inlet plate 2 and the inner cavity wall 13. The water-cooled interlayer 15 controls the temperature of the inner cavity wall 13 of the reaction chamber 1, preventing the temperature of the inner cavity wall 13 from becoming too high and affecting plasma stability. At the same time, it can absorb excess heat during the deposition process, maintaining a stable temperature field inside the cavity. The structure is simple, and the temperature control effect is stable and reliable.

[0053] Example 2: like Figure 12 As shown, the air intake structure of the MPCVD equipment in this embodiment is basically the same as that in Embodiment 1. The differences include: the air intake plate 2 is divided into a central air supply area 22, an intermediate transition area 23 and an edge compensation area 24 from the center to the edge; the air distribution chamber 11 is correspondingly divided into a central air supply chamber, an intermediate transition air supply chamber and an edge compensation air supply chamber; and the air intake channel 12 is provided with multiple channels, which respectively connect to the central air supply chamber, the intermediate transition air supply chamber and the edge compensation air supply chamber.

[0054] The air intake structure of the MPCVD equipment in this embodiment provides independent air supply to the central air supply area 22, the intermediate transition area 23 and the edge compensation area 24 by setting multiple air intake channels 12. That is, different areas are connected to independent air paths, which can realize zoned flow control. By adjusting the flow ratio of different areas, the surface flow field distribution of the substrate stage 3 can be further optimized and the process adaptability to substrates of different sizes can be enhanced.

[0055] Preferably, in this embodiment, the central air supply chamber, the intermediate transition air supply chamber, and the edge compensation air supply chamber are interconnected, and zoned air supply can be achieved without additional isolation structures. This simplifies the processing and assembly difficulty of the air intake plate 2, reduces structural design costs, and facilitates the modification and upgrading of existing equipment.

[0056] Of course, in other embodiments, sealing separators can also be set between each gas supply zone to achieve complete independent sealing of the three gas supply chambers, avoid gas leakage between different zones, and further improve the accuracy of zoned flow regulation.

[0057] Example 3: like Figure 13 As shown, the air intake structure of the MPCVD equipment in this embodiment is basically the same as that in Embodiment 1. The differences include: the air intake plate 2 is provided with multiple layers at intervals along the vertical direction, the uppermost air intake plate 2 forms a uniform air chamber 11 between it and the top wall of the reaction chamber 1, and a closed cavity 16 is formed between adjacent air intake plates 2.

[0058] The air intake structure of the MPCVD equipment in this embodiment, by setting up multiple air intake disks 2, can form a closed cavity 16 between each air intake disk 2 as a buffer cavity or pressure equalization cavity, in addition to the gas equalization chamber 11. This makes the gas pressure entering each air intake hole 21 more uniform, further improves the uniformity of airflow inside the cavity, and enhances the adaptability to complex process conditions.

[0059] Preferably, in this embodiment, the air intake plate 2 has three layers. The uppermost air intake plate 2 is a pressure equalization layer, used to balance the gas pressure entering each area. The middle air intake plate 2 is a flow guide layer, used to adjust the airflow direction and flow distribution. The lowermost air intake plate 2 is a spray layer, used to be responsible for finally spraying gas into the cavity. The three air intake plates 2 cooperate with each other, so that the process gas can form a stable and uniform pressure distribution and flow direction before entering the cavity. The uniformity of the airflow finally sprayed onto the surface of the substrate stage 3 is greatly improved, effectively improving the uniformity and consistency of diamond deposition.

[0060] The above description is merely a preferred embodiment of the present invention and is not intended to limit the present invention in any way. Although the present invention has been disclosed above with reference to preferred embodiments, it is not intended to limit the present invention. Any person skilled in the art can make many possible variations and modifications to the technical solutions of the present invention using the methods and techniques disclosed above, or modify them into equivalent embodiments with equivalent changes, without departing from the spirit and technical essence of the present invention. Therefore, any simple modifications, equivalent substitutions, equivalent changes, and modifications made to the above embodiments based on the technical essence of the present invention without departing from the content of the technical solutions of the present invention shall still fall within the protection scope of the technical solutions of the present invention.

Claims

1. An air intake structure for an MPCVD device, characterized in that: The reaction chamber (1) includes a removable air inlet plate (2) and a substrate stage (3) below the air inlet plate (2). The air inlet plate (2) has multiple air inlets (21). A closed gas equalization chamber (11) is formed between the air inlet plate (2) and the top wall of the reaction chamber (1). An air inlet channel (12) communicating with the gas equalization chamber (11) is provided on the top of the reaction chamber (1).

2. The air intake structure of the MPCVD equipment according to claim 1, characterized in that: The air inlet (21) includes one or more of the following: circular hole, stepped hole, conical hole, and elongated hole.

3. The air intake structure of the MPCVD equipment according to claim 1, characterized in that: Each of the air inlets (21) is distributed in a multi-region gradient, annular partition, or asymmetric compensation distribution.

4. The air intake structure of the MPCVD equipment according to claim 1, characterized in that: The air inlet (21) is arranged at an angle toward the center of the air inlet plate (2).

5. The air intake structure of the MPCVD equipment according to claim 4, characterized in that: The radial inclination angle of the air inlet (21) is α, which satisfies 10°≤α≤80°.

6. The air intake structure of the MPCVD equipment according to claim 1, characterized in that: The air inlet (21) is offset along the tangential direction of the air inlet disc (2).

7. The air intake structure of the MPCVD equipment according to claim 6, characterized in that: The tangential deflection angle of the air inlet (21) is β, which satisfies -60°≤β≤60°.

8. The air intake structure of the MPCVD equipment according to claim 1, characterized in that: The air intake plate (2) is divided into a central air supply area (22), an intermediate transition area (23) and an edge compensation area (24) from the center to the edge. The air distribution chamber (11) is correspondingly divided into a central air supply chamber, an intermediate transition air supply chamber and an edge compensation air supply chamber. The air intake channel (12) is provided with multiple channels, which are respectively connected to the central air supply chamber, the intermediate transition air supply chamber and the edge compensation air supply chamber.

9. The air intake structure of the MPCVD equipment according to claim 1, characterized in that: The air intake plate (2) is provided with multiple layers at intervals along the vertical direction. The uppermost air intake plate (2) forms the uniform air chamber (11) between it and the top wall of the reaction chamber (1), and the adjacent air intake plates (2) form a closed cavity (16).

10. The air intake structure of the MPCVD equipment according to any one of claims 1 to 9, characterized in that: The reaction chamber (1) includes an inner cavity wall (13) and an outer cavity wall (14), a water-cooled interlayer (15) is formed between the inner cavity wall (13) and the outer cavity wall (14), and the air-equalizing chamber (11) is formed between the air intake plate (2) and the inner cavity wall (13).

Images