Wide bandgap semiconductor photoelectric homojunction junction field effect transistor, method of manufacturing and application thereof

Abstract

The application discloses a wide-bandgap semiconductor photoelectric homojunction field effect transistor, a manufacturing method thereof and application. The transistor comprises a wide-bandgap semiconductor layer capable of generating photo-generated carriers under light irradiation, a conductive channel formed in the semiconductor layer, a source, a drain and a gate. The gate comprises a p-type semiconductor material layer arranged on a first region of the surface of the wide-bandgap semiconductor layer, which is in contact with the wide-bandgap semiconductor layer to form a heterojunction or a p-n junction, and can deplete the electrons in the conductive channel under the first region. Meanwhile, a light receiving window is formed on the transistor, which can allow light to pass through and irradiate on the surface and / or inside of the wide-bandgap semiconductor layer. The transistor utilizes the p-type semiconductor material layer and the wide-bandgap semiconductor channel to form a heterojunction gate or a p-n junction gate control structure, which can improve the gate control ability, reduce the off-state leakage current, serve as an extraction channel for photo-generated holes, promote the export of residual holes in the off process, and realize low conduction loss and fast turn-off.

Images