A laser chamfering apparatus and method for silicon carbide substrates

Abstract

The application relates to a laser chamfering processing device and method for a silicon carbide substrate, which comprises a laser light source and shaping module, a laser focusing module and a substrate loading control module. The laser light source and shaping module are used for emitting a laser beam, and the axis of the laser beam is parallel to the reference surface of the substrate to be processed. The laser focusing module is arranged on the outgoing light path of the laser beam and is used for focusing the laser beam and controlling the laser focal depth in a preset range, so that the non-circular mark area of the outer peripheral edge of the substrate is in the processing range of the laser focal depth. The substrate loading control module is used for adsorbing and fixing the substrate and driving the substrate to rotate along the axis, and makes the substrate move linearly and reciprocally along the axial direction perpendicular to the reference surface of the substrate. The laser chamfering processing device is arranged to control the substrate to keep rotating, and through the linear reciprocating movement of the substrate in multiple steps of axial stepping, the laser beam is used for multi-stage step-by-step layered cutting processing of the edge of the substrate to form a chamfer.

Description

Technical Field

[0001] This invention relates to the field of semiconductor processing technology, and specifically to a laser chamfering processing device and method for silicon carbide substrates. Background Technology

[0002] Currently, the chamfering of silicon carbide substrates is commonly achieved using mechanical contact grinding wheels. However, due to the high hardness and brittleness of silicon carbide, this contact machining method easily leads to edge chipping and cracking during chamfering, resulting in low product yield and high consumption of consumables such as grinding wheels, leading to high production costs. Furthermore, the outer periphery of standard silicon carbide substrates typically has non-circular marking areas, such as flat or concave shapes, used to indicate crystal orientation. Traditional processing equipment, when dealing with these non-circular marking areas, often struggles to adapt its processing trajectory or focal length to the inward edge recess, easily resulting in uneven processing or failure to form the non-circular marking areas in a single pass. This severely impacts the overall uniformity and production efficiency of the chamfering process. Summary of the Invention

[0003] The purpose of this invention is to provide a laser chamfering processing equipment and method for silicon carbide substrates, which can eliminate the impact of mechanical contact stress on hard and brittle silicon carbide substrates to reduce the cracking rate and edge breakage rate, improve the yield of finished products and reduce production costs. It can also ensure that non-circular marking areas have the same material removal efficiency as ordinary circular areas, and achieve high uniformity and continuity of chamfering processing around the entire substrate.

[0004] To achieve the above objectives, according to a first aspect of the present invention, a laser chamfering apparatus for silicon carbide substrates is provided, comprising: A laser source and shaping module are used to emit a laser beam, the axis of which is parallel to the reference plane of the substrate to be processed; A laser focusing module is disposed on the outgoing light path of the laser beam to focus the laser beam and control the laser focal depth within a preset range so that the non-circular marking area on the outer periphery of the substrate is within the processing range of the laser focal depth. The substrate is equipped with a control module for adsorbing and fixing the substrate and driving the substrate to rotate along its axis, and for causing the substrate to reciprocate linearly in an axial direction perpendicular to the substrate reference plane. The laser chamfering equipment is configured to control the substrate to maintain its rotation, and to perform multi-level stepped layer-by-layer cutting on the edge of the substrate by means of multiple axial step-by-step linear reciprocating movements of the substrate in conjunction with the laser beam to form a chamfer.

[0005] Optionally, the laser beam focused by the laser focusing module has a focal depth range of not less than 10 mm, and the energy density of the laser beam within the focal depth range is not less than 50% of the highest energy density at the laser focal point.

[0006] Optionally, in the multi-stage stepped layer cutting process, the area removed by the single cutting process performed by the substrate in a single linear reciprocating motion in conjunction with the laser beam is a single-stage stepped cutting layer, and the axial step distance between two adjacent single-stage stepped cutting layers is less than the radius of the laser focus.

[0007] Optionally, the substrate rotates at a speed of 60 rpm to 1200 rpm.

[0008] Optionally, the laser chamfering processing equipment for silicon carbide substrates further includes a light source sealing module, which includes an integral sealing cavity covering the laser light source and the shaping module, a laser glass disposed at the output end of the integral sealing cavity, and an air inlet and an air outlet respectively disposed on the integral sealing cavity.

[0009] Optionally, the laser focusing module includes: Focus on the housing; The lens mounting bracket is disposed within the focusing housing; A laser focusing lens is mounted on the lens mounting bracket; Two sealed laser windows are disposed within the focusing housing and located on both sides of the laser focusing lens; A coaxial protective gas inlet is provided on the focusing housing and communicates with the interior of the focusing housing; A laser processing nozzle is disposed at the output end of the focusing housing and is used to output the focused laser beam and coaxial protective gas.

[0010] Optionally, the substrate carries a control module including: A vacuum suction cup is used to adsorb and fix the substrate; A drive assembly is connected to the vacuum suction cup via a transmission shaft. The drive assembly is used to drive the transmission shaft to rotate the vacuum suction cup and drive the vacuum suction cup to move linearly back and forth along the axial direction.

[0011] Optionally, the laser chamfering processing equipment for silicon carbide substrates further includes a gas protection module, which consists of a bypass blowing assembly, a bypass suction assembly, a filter assembly, and a pressurization assembly connected in series at the laser processing location.

[0012] According to a second aspect of the present invention, a processing method for a laser chamfering processing apparatus for a silicon carbide substrate is provided, comprising the following steps: The substrate to be processed is fixed onto the substrate-mounted control module; The laser source and shaping module are turned on to emit the laser beam, so that the axis of the laser beam is parallel to the reference plane of the substrate, and the edge of the substrate is within the focal depth range of the laser after focusing by the laser focusing module; The substrate is controlled to maintain its rotation and to perform multiple linear reciprocating movements with progressively increasing axial steps, so that the laser beam performs multi-level stepped layer-by-layer cutting on the edge of the substrate to form the chamfer.

[0013] Optionally, controlling the substrate to maintain its rotation and controlling the substrate to perform multiple progressively axially stepped linear reciprocating movements, so that the laser beam performs multi-level stepped layered cutting processing on the edge of the substrate to form the chamfer, includes the following steps: The substrate is controlled to maintain its rotation while simultaneously moving to the starting point; The substrate is controlled to move linearly back and forth along the axial direction according to a preset chamfer longitudinal width, so that the laser beam cuts away the first single-stage stepped cutting layer. The substrate is controlled to move linearly in the axial direction in a step-by-step axial reciprocating motion so that the laser beam can cut and remove the next single-stage stepped cutting layer. Repeat the above cutting steps until the chamfering is complete.

[0014] The beneficial effects of this invention are as follows: By employing a laser light source and a shaping module to emit a laser beam with its axis parallel to the reference surface of the substrate to be processed, and combining this with a substrate-mounted control module to perform non-contact, multi-level, stepped layer cutting processing on the substrate edge, the traditional mechanical contact grinding method is changed. The non-contact laser energy removal method eliminates the impact of mechanical contact stress on the edge of the hard and brittle silicon carbide substrate, reduces the cracking rate and edge breakage rate during the chamfering process, improves the yield of finished products, and reduces production costs. By using a laser focusing module to control the laser focal depth within a preset range, the non-circular marking area on the outer periphery of the substrate is completely within the processing range of the laser focal depth. Thus, when the substrate rotates to the non-circular marking area and the edge retracts inward, the retracted edge surface is still completely covered within the effective processing window of the laser focal depth, ensuring that the non-circular marking area has the same material removal efficiency as the ordinary circular area, and achieving a high degree of uniformity and continuity in the chamfering process around the entire substrate periphery.

[0015] The above description is merely an overview of the technical solution of the present invention. In order to better understand the technical means of the present invention and to implement it in accordance with the contents of the specification, the preferred embodiments of the present invention are described in detail below with reference to the accompanying drawings. Attached Figure Description

[0016] Figure 1 This is a schematic block diagram of a laser chamfering processing device for silicon carbide substrates according to an embodiment of the present invention; Figure 2 This is a schematic structural diagram of a light source sealing module for a laser chamfering processing equipment for silicon carbide substrates, according to an embodiment of the present invention. Figure 3 This is a schematic structural diagram of a laser focusing module for a laser chamfering processing device for silicon carbide substrates, according to an embodiment of the present invention. Figure 4 This is a schematic structural diagram of a substrate-mounted control module for a laser chamfering processing equipment for silicon carbide substrates, according to an embodiment of the present invention. Figure 5 This is a schematic structural diagram of a substrate chamfer processed by a laser chamfering processing device for silicon carbide substrates, according to an embodiment of the present invention. Figure 6(a) is a schematic structural diagram of a substrate chamfer processed by a laser chamfering processing equipment for silicon carbide substrates according to a specific embodiment of the present invention; Figure 6(b) is a schematic structural diagram of a substrate chamfer processed by a laser chamfering processing equipment for silicon carbide substrates, according to another specific embodiment of the present invention; Figure 6(c) is a schematic structural diagram of a substrate chamfer processed by a laser chamfering processing equipment for silicon carbide substrates, according to another specific embodiment of the present invention; Figure 7 This is a schematic flowchart illustrating a processing method for a laser chamfering processing apparatus for a silicon carbide substrate according to an embodiment of the present invention; Figure 8 for Figure 7 A schematic flowchart of step S30; In the diagram: 1. Laser source and shaping module; 2. Laser focusing module; 21. Focusing housing; 22. Lens mounting bracket; 23. Laser focusing lens; 24. Sealed laser window; 25. Coaxial protective gas inlet; 26. Laser processing nozzle; 3. Substrate mounting control module; 31. Vacuum chuck; 32. Drive assembly; 33. Drive shaft; 4. Substrate; 41. Single-stage stepped cutting layer; 5. Source sealing module; 51. Overall sealed cavity; 52. Laser glass; 53. Inlet; 54. Outlet; 6. Gas protection module; 61. Off-axis blowing assembly; 62. Off-axis suction assembly. Detailed Implementation

[0017] The technical solution of the present invention will now be clearly and completely described with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0018] In the description of this invention, it should be noted that the terms "center," "upper," "lower," "left," "right," "vertical," "horizontal," "inner," and "outer," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are used only for the convenience of describing the invention and for simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on the invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and should not be construed as indicating or implying relative importance.

[0019] In the description of this invention, it should be noted that, unless otherwise explicitly specified and limited, the terms "installation," "connection," and "linking" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection of two components. Those skilled in the art can understand the specific meaning of the above terms in this invention based on the specific circumstances. Furthermore, the technical features involved in the different embodiments of this invention described below can be combined with each other as long as they do not conflict with each other.

[0020] Please see Figure 1 A preferred embodiment of this application discloses a laser chamfering apparatus for silicon carbide substrates, comprising a laser source and shaping module 1, a laser focusing module 2, and a substrate mounting control module 3. The laser source and shaping module 1 emits a laser beam, the axis of which is parallel to the reference surface of the substrate 4 to be processed. The laser focusing module 2 is disposed on the output path of the laser beam and is used to focus the laser beam and control the laser depth of focus within a preset range, so that the non-circular marking area on the outer periphery of the substrate 4 is within the processing range of the laser depth of focus. The substrate mounting control module 3 is used to adsorb and fix the substrate 4 and drive the substrate 4 to rotate along its axis, and to make the substrate 4 reciprocate linearly in an axial direction perpendicular to the reference surface of the substrate 4. The laser chamfering apparatus is configured to control the substrate 4 to maintain its rotation, and through multiple progressively advancing axial linear reciprocating movements of the substrate 4, in conjunction with the laser beam, perform multi-level stepped layered cutting processing on the edge of the substrate 4 to form a chamfer.

[0021] According to the embodiment of the present invention, by using a laser light source and shaping module 1 to emit a laser beam with its axis parallel to the reference surface of the substrate 4 to be processed, and combining it with the substrate-mounted control module 3 to perform non-contact, multi-level stepped layer cutting processing on the edge of the substrate 4, the traditional mechanical contact grinding method is changed. The non-contact laser energy removal method eliminates the impact of mechanical contact stress on the edge of the hard and brittle silicon carbide substrate 4, reduces the cracking rate and edge breakage rate during the chamfering process, improves the yield of finished products, and reduces production costs. By using the laser focusing module 2 to control the laser focal depth within a preset range, the non-circular marking area on the outer periphery of the substrate 4 is completely within the processing range of the laser focal depth. Thus, when the substrate 4 rotates to the non-circular marking area and the edge retracts inward, the retracted edge surface is still completely covered within the effective processing window of the laser focal depth, ensuring that the non-circular marking area has the same material removal efficiency as the ordinary circular area, and achieving high uniformity and continuity of the chamfering processing around the entire substrate 4.

[0022] The following detailed description uses specific examples: Specifically, the laser focal depth range of the laser beam focused by laser focusing module 2 is not less than 10 mm, and the energy density of the laser beam within the laser focal depth range is not less than 50% of the highest energy density at the laser focal point. In this embodiment, the laser focal depth range of the laser beam is ±5 mm with the laser focal point as the origin.

[0023] Please see Figure 5 In multi-stage stepped layer cutting, the area removed by a single linear reciprocating motion of the substrate 4 in conjunction with the laser beam is the single-stage stepped cutting layer 41. The axial step distance between two adjacent single-stage stepped cutting layers 41 is less than the radius of the laser focus. By utilizing a high overlap rate axial step design, the single-stage stepped cutting layers 41 removed by two adjacent cuts are highly overlapped and staggered in the axial direction to form a composite shape, thereby minimizing the unevenness of the stepped surface inherent in stepped processing and improving the smoothness of the final composite chamfered section.

[0024] Specifically, in this embodiment, the rotation speed of the substrate 4 is 60 rpm to 1200 rpm. By maintaining the rotation speed within a reasonable process range, it is ensured that the substrate 4 can complete at least one full circumferential rotation within the time required for processing a single single-stage stepped cutting layer 41. This ensures the circumferential continuity and integrity of the chamfer across the entire circumference and non-circular marking areas, effectively avoiding the problem of uneven local processing or missed cuts caused by excessively low rotation speed. It also avoids the negative impact of mechanical vibration caused by excessively high rotation speed on the accuracy of laser focusing processing.

[0025] Further, please see Figure 1 and Figure 2The laser chamfering processing equipment also includes a light source sealing module 5. The light source sealing module 5 includes an integral sealed cavity 51 covering the laser light source and shaping module 1, a laser glass 52 located at the output end of the integral sealed cavity 51, and an air inlet 53 and an air outlet 54 respectively located on the integral sealed cavity 51. The light source sealing module 5 can construct a sealed, clean protective cavity for the laser light source and shaping module 1. While maintaining air circulation through the air inlet 53 and the air outlet 54, the laser glass 52 allows the parallel laser beam to be emitted without damage, effectively extending the service life of the light source components.

[0026] Specifically, please see Figure 3 The laser focusing module 2 includes a focusing housing 21, a lens mounting bracket 22, a laser focusing lens 23, sealed laser windows 24, a coaxial protective gas inlet 5325, and a laser processing nozzle 26. The lens mounting bracket 22 is housed within the focusing housing 21, and the laser focusing lens 23 is mounted on the lens mounting bracket 22. Two sealed laser windows 24 are located within the focusing housing 21 and on either side of the laser focusing lens 23. The coaxial protective gas inlet 5325 is located on the focusing housing 21 and communicates with its interior. The laser processing nozzle 26 is located at the output end of the focusing housing 21 and is used to output the focused laser beam and the coaxial protective gas. The laser focusing lens 23 achieves precise focusing of the laser beam to control the depth of focus and spot size. Protective gas is introduced through the coaxial protective gas inlet 5325, and the focused laser beam and coaxial protective gas are output together by the laser processing nozzle 26, forming a high-pressure isolation in the cutting zone, effectively preventing silicon carbide debris from splashing and contaminating the laser focusing lens 23.

[0027] Specifically, please see Figure 4 The substrate is equipped with a control module 3, which includes a vacuum chuck 31 and a drive assembly 32. The vacuum chuck 31 is used to adsorb and fix the substrate 4. A drive shaft 33 is connected between the drive assembly 32 and the vacuum chuck 31. The drive assembly 32 drives the drive shaft 33 to rotate the vacuum chuck 31 and drive the vacuum chuck 31 to move linearly back and forth along the axial direction. The vacuum chuck 31 generates sufficient negative pressure pneumatic adsorption force to firmly lock the silicon carbide substrate 4, and the drive assembly 32 precisely drives the drive shaft 33 to seamlessly transmit high-precision rotational motion and axial linear reciprocating movement to the substrate 4, ensuring the execution accuracy of the multi-level stepped layering processing trajectory.

[0028] Further, please see Figure 1 and Figure 4The laser chamfering equipment also includes a gas protection module 6, which consists of a bypass blowing assembly 61 and a bypass suction assembly 62 located at the laser processing area, a filter assembly, and a pressurization assembly connected in series. The gas protection module 6 establishes a local flow field on both sides of the laser chamfering area, enabling real-time blowing away and suction of high-temperature silicon carbide particulate dust generated during processing. After purification by the filter assembly and pressurization by the pressurization assembly, the dust is recycled, preventing interference with the laser path and pollution of the equipment environment.

[0029] Please see Figure 7 This application also provides a processing method for a laser chamfering processing apparatus for silicon carbide substrates, comprising the following steps: Step S10: Fix the substrate 4 to be processed onto the substrate mounting control module 3; Step S20: Turn on the laser source and shaping module 1 to emit a laser beam, so that the axis of the laser beam is parallel to the reference plane of the substrate 4, and the edge of the substrate 4 is within the laser focal depth range after being focused by the laser focusing module 2. Step S30: Control the substrate 4 to maintain its rotation and control the substrate 4 to perform multiple axial step-by-step linear reciprocating movements so that the laser beam performs multi-level stepped layer-by-layer cutting processing on the edge of the substrate 4 to form a chamfer.

[0030] Please see Figure 8 Step S30 includes the following steps: Step S301: Control the substrate 4 to maintain its rotation, while simultaneously controlling the substrate 4 to move to the starting point; Step S302: Control the substrate 4 to move linearly back and forth along the axial direction according to the preset chamfer longitudinal width, so that the laser beam cuts and removes the first single-stage stepped cutting layer 41; Step S303: Control the substrate 4 to perform the next step-by-step linear reciprocating movement along the axial direction so that the laser beam can cut and remove the next single-stage stepped cutting layer 41; Step S304: Repeat the above cutting steps until the chamfering is completed.

[0031] Please refer to Figure 6(a), in one specific embodiment: This embodiment provides a laser chamfering process for an 8-inch silicon carbide substrate 4 with a thickness of 500µm. The final chamfered cross-section has a longitudinal width of 150µm and a transverse depth of 500µm. The specific process parameters for this embodiment are set as follows: the laser focus diameter of the laser beam focused by the laser focusing module 2 is 0.06mm, and the laser focal depth range is ±5mm with the laser focus as the origin. The laser beam emitted by the laser source and shaping module 1 has a power of 50W, a repetition frequency of 100kHz, and a laser pulse width of 10ns. The substrate-mounted control module 3 drives the substrate 4 to rotate at a speed of 300rpm.

[0032] The specific control steps of the processing path in this embodiment are as follows: First, while keeping the substrate 4 to be processed in a rotating state, the axial relative position between the substrate 4 and the laser beam is initialized, so that the laser focus is positioned at the starting point 0.1mm above the top surface of the substrate 4; then, an initial linear reciprocating movement is performed, controlling the laser focus to move relative to the starting point to a preset maximum longitudinal width position 0.15mm below the top surface of the substrate 4, and the laser beam cuts the edge of the substrate 4 to remove the first single-stage stepped cutting layer 41; next, the laser focus is controlled to move relative to the starting point 0.1mm above the top surface of the substrate 4 to move out of the processing area, where an axial step distance is given. After the shift, the laser focus is controlled to move relatively to a position 0.12 mm below the top surface of the substrate 4 to perform the next linear reciprocating movement, cutting away the next single-stage stepped cutting layer 41. Then, the laser focus is controlled to move relatively in the opposite direction back to the starting position 0.1 mm above the top surface of the substrate 4. This process is repeated, sequentially controlling the laser focus to move relatively to positions 0.09 mm below and 0.1 mm above the top surface of the substrate 4, 0.06 mm below and 0.1 mm above, 0.03 mm below and 0.1 mm above, and 0 mm below and 0.1 mm above. Finally, the laser beam is turned off. Through the gradual decrease and staggered overlap of multiple single-stage stepped cutting layers 41 in the axial direction, the overall chamfering process is completed. The relative linear movement speed during this segment is controlled at 0.01 mm / s, and there is no dwell time during the stroke.

[0033] Please refer to Figure 6(b) for another specific embodiment: This embodiment provides another laser chamfering process for an 8-inch silicon carbide substrate 4 with a thickness of 500µm. The final chamfered cross-section has a longitudinal width of 150µm and a lateral depth of 150µm.

[0034] The specific process parameters for this embodiment are set as follows: the laser focal point diameter of the laser beam focused by the laser focusing module 2 is 0.06 mm, and the laser focal depth range is ±5 mm with the laser focal point as the origin. The laser beam emitted by the laser source and shaping module 1 has a power of 50 W, a repetition frequency of 100 kHz, and a laser pulse width of 10 ns. The substrate-mounted control module 3 drives the rotation speed of the substrate 4 to be processed to 300 rpm.

[0035] In the processing path control process, this embodiment also uses the substrate 4 to be processed as a stationary reference to define the relative motion trajectory. The axial relative position between the substrate 4 and the laser beam is initialized to a starting point 0.1 mm above the top surface of the substrate 4. The axial step-by-step longitudinal width values ​​of the multi-level stepped layer cutting processing are successively set to 0.15 mm, 0.12 mm, 0.09 mm, 0.06 mm, 0.03 mm, and 0 mm below the top surface of the substrate 4. The substrate is equipped with a control module 3, which controls the speed of a single linear reciprocating movement to be 0.05 mm / s, and there is no dwell time during the stroke. The chamfering process is completed through multiple linear reciprocating movements in conjunction with a fixed laser beam.

[0036] Please refer to Figure 6(c), in yet another specific embodiment: This embodiment provides another laser chamfering process for an 8-inch silicon carbide substrate 4 with a thickness of 500µm. The final chamfered cross-section has a longitudinal width of 100µm and a lateral depth of 500µm.

[0037] The specific process parameters for this embodiment are set as follows: the diameter of the laser focal point of the laser beam focused by the laser focusing module 2 is 0.04 mm, and the laser focal depth range is ±5 mm with the laser focal point as the origin. The laser beam emitted by the laser source and shaping module 1 has a power of 50 W, a repetition frequency of 100 kHz, and a laser pulse width of 10 ns. The substrate-mounted control module 3 drives the rotation speed of the substrate 4 to be processed to 600 rpm.

[0038] In the processing path control process, this embodiment also uses the substrate 4 to be processed as a stationary reference to define the relative motion trajectory. The axial relative position between the substrate 4 and the laser beam is initialized to a starting point 0.1 mm above the top surface of the substrate 4. The axial step-by-step longitudinal width values ​​of the multi-level stepped layer cutting processing are successively set to 0.1 mm, 0.08 mm, 0.06 mm, 0.04 mm, 0.02 mm, and 0 mm below the top surface of the substrate 4. The substrate is equipped with a control module 3, which controls the speed of a single linear reciprocating movement to be 0.01 mm / s, and there is no dwell time during the stroke. The chamfering process is completed through multiple linear reciprocating movements in conjunction with a fixed laser beam.

[0039] The technical features of the above embodiments can be combined in any way. For the sake of brevity, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0040] The embodiments described above are merely illustrative of several implementations of the present invention, and while the descriptions are relatively specific and detailed, they should not be construed as limiting the scope of the invention patent. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of the present invention, and these all fall within the protection scope of the present invention. Therefore, the protection scope of this invention patent should be determined by the appended claims.

Claims

1. A laser chamfering processing device for silicon carbide substrates, characterized in that, include: A laser source and shaping module are used to emit a laser beam, the axis of which is parallel to the reference plane of the substrate to be processed; A laser focusing module is disposed on the outgoing light path of the laser beam to focus the laser beam and control the laser focal depth within a preset range, so that the non-circular marking area on the outer periphery of the substrate is within the processing range of the laser focal depth; The substrate is equipped with a control module for adsorbing and fixing the substrate and driving the substrate to rotate along its axis, and for causing the substrate to reciprocate linearly in an axial direction perpendicular to the substrate reference plane. The laser chamfering equipment is configured to control the substrate to maintain its rotation, and to perform multi-level stepped layer-by-layer cutting on the edge of the substrate by means of multiple axial step-by-step linear reciprocating movements of the substrate in conjunction with the laser beam to form a chamfer.

2. The laser chamfering equipment for silicon carbide substrates according to claim 1, characterized in that, The laser beam focused by the laser focusing module has a focal depth range of not less than 10 mm, and the energy density of the laser beam within the focal depth range is not less than 50% of the highest energy density at the laser focal point.

3. The laser chamfering equipment for silicon carbide substrates according to claim 1, characterized in that, In the multi-stage stepped layer cutting process, the area removed by the single cutting process of the substrate moving linearly back and forth in conjunction with the laser beam is a single-stage stepped cutting layer, and the axial step distance between two adjacent single-stage stepped cutting layers is less than the radius of the laser focus.

4. The laser chamfering equipment for silicon carbide substrates according to claim 1, characterized in that, The substrate rotates at a speed of 60 rpm to 1200 rpm.

5. The laser chamfering equipment for silicon carbide substrates according to claim 1, characterized in that, It also includes a light source sealing module, which includes an overall sealing cavity covering the outside of the laser light source and the shaping module, a laser glass disposed at the output end of the overall sealing cavity, and an air inlet and an air outlet respectively disposed on the overall sealing cavity.

6. The laser chamfering equipment for silicon carbide substrates according to claim 1, characterized in that, The laser focusing module includes: Focus on the housing; The lens mounting bracket is disposed within the focusing housing; A laser focusing lens is mounted on the lens mounting bracket; Two sealed laser windows are disposed within the focusing housing and located on both sides of the laser focusing lens; A coaxial protective gas inlet is provided on the focusing housing and communicates with the interior of the focusing housing; A laser processing nozzle is disposed at the output end of the focusing housing and is used to output the focused laser beam and coaxial protective gas.

7. The laser chamfering equipment for silicon carbide substrates according to claim 1, characterized in that, The substrate-mounted control module includes: A vacuum suction cup is used to adsorb and fix the substrate; A drive assembly is connected to the vacuum suction cup via a transmission shaft. The drive assembly is used to drive the transmission shaft to rotate the vacuum suction cup and drive the vacuum suction cup to move linearly back and forth along the axial direction.

8. The laser chamfering equipment for silicon carbide substrates according to claim 1, characterized in that, It also includes a gas protection module, which consists of a bypass blowing assembly, a bypass suction assembly, a filter assembly, and a pressurization assembly connected in series at the laser processing location.

9. A processing method for a laser chamfering apparatus for silicon carbide substrates as described in any one of claims 1-8, characterized in that, Includes the following steps: The substrate to be processed is fixed onto the substrate-mounted control module; The laser source and shaping module are turned on to emit the laser beam, so that the axis of the laser beam is parallel to the reference plane of the substrate, and the edge of the substrate is within the focal depth range of the laser after focusing by the laser focusing module; The substrate is controlled to maintain its rotation and to perform multiple linear reciprocating movements with progressively increasing axial steps, so that the laser beam performs multi-level stepped layer-by-layer cutting on the edge of the substrate to form the chamfer.

10. The processing method of the laser chamfering processing equipment for silicon carbide substrates according to claim 9, characterized in that, The process of controlling the substrate to maintain its rotation and controlling the substrate to perform multiple progressively axially stepped linear reciprocating movements, so that the laser beam performs multi-level stepped layered cutting processing on the edge of the substrate to form the chamfer, includes the following steps: The substrate is controlled to maintain its rotation while simultaneously moving to the starting point; The substrate is controlled to move linearly back and forth along the axial direction according to a preset chamfer longitudinal width, so that the laser beam cuts away the first single-stage stepped cutting layer. The substrate is controlled to move linearly in the axial direction in a step-by-step axial reciprocating motion so that the laser beam can cut and remove the next single-stage stepped cutting layer. Repeat the above cutting steps until the chamfering is complete.

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