Detection device for rapidly judging incoming silicon material performance in batches
By designing a detection device that quickly determines the performance of silicon material incoming materials in batches, the problem of hysteresis of silicon material electrical performance detection in polycrystalline silicon ingot production is solved, and fast and accurate performance detection of silicon ingots is achieved, reducing the mass scrapping of silicon ingots and shortening of production cycles is achieved. .
Patent Information
- Application Number
- CN202420162311.7
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-01-23
- Publication Date
- 2024-12-10
- Estimated Expiration
- 2034-01-23
AI Technical Summary
During the production process of polycrystalline silicon ingots, due to the delay in the detection of the electrical performance of the silicon material, the batch reduction and scrapping of the silicon ingots, affecting production efficiency and product quality.
A detection device for rapid batch determination of the performance of silicon material incoming materials is designed, including water-cooled plates, bottom hot plates, guard plates and heat insulation cages. The rapid sample preparation and electrical performance detection are achieved through the ingot cavity and heater in the crucible to shorten the The sample preparation time is completed and the rationality of the ingot temperature ladder is ensured through a special ingot process.
It realizes rapid and accurate determination of the performance of incoming silicon materials, reduces the mass scrapping of silicon ingots, shortens the production cycle, and improves the inspection efficiency of product quality.
Smart Images
Figure CN222144919U_ABST
Abstract
Description
Technical Field
[0001] The utility model relates to the technical field of silicon material detection, in particular to a detection device for quickly and in batches determining the properties of incoming silicon materials. Background Art
[0002] With the rapid development of the photovoltaic industry, the expansion of single crystals has led to a lack of good materials available in the polycrystalline industry. In order to survive, the polycrystalline industry can only lower the standard of silicon materials. A large amount of broken materials, fragments and crucible bottom materials have all poured into polycrystalline. The electrical properties of broken silicon materials cannot be detected by the naked eye, and the incoming materials can only be tested for metal content. Due to the lack of electrical performance data, there is a lack of practical guidance for the material preparation end, resulting in frequent downgrading and scrapping of silicon ingots at the ingot casting end, which has a great impact on production.
[0003] Since the loading capacity of a single crucible for ingot casting is 1,200 kg, the normal ingot casting cycle is four days, and it takes two days of cooling before it can flow normally to the process steps, the feedback of its electrical performance indicators is seriously delayed, making it impossible for the front-end loader to accurately judge the quality of the silicon material through the electrical performance indicators. During the uninterrupted production process, the silicon material performance data has not been released, and the lower furnace has already entered the furnace, which poses a huge hidden danger to product quality. Utility Model Content
[0004] The technical problem to be solved by the utility model is the abnormal electrical performance of silicon ingot batches caused by inaccurate silicon material determination.
[0005] In order to solve the above technical problems, the technical solution adopted by the utility model is: a detection device for quickly and in batches determining the performance of incoming silicon materials, comprising a water-cooled plate, a bottom hot plate fixed above the water-cooled plate, and a guard plate fixed to the top of the bottom hot plate. The guard plate is in a box structure and is connected to a cover plate on the top. A crucible is arranged in the guard plate, and ingot cavities are evenly distributed in the crucible. An insulating cage is provided on the outer cover of the guard plate, a heater is arranged on the inner wall of the insulating cage, and an air flow channel is provided in the center of the bottom hot plate.
[0006] Preferably, the heater includes a top heater fixedly arranged on the top of the thermal insulation cage and a side heater arranged on the inner side wall of the thermal insulation cage.
[0007] Preferably, a base is provided at the bottom of the guard plate and is connected to the bottom heat sink through the base. A supporting foot is provided at the bottom of the base, and the air flow channel is located at the center below the base.
[0008] Preferably, the tops of the side walls of the guard plates are each provided with notches.
[0009] 1. The utility model provides a method for quickly determining the performance of incoming silicon materials in batches. By making the material cavity in the crucible into a 250*250mm structure, optimizing the size of the guard plate, increasing fixation, and matching a dedicated sample preparation and ingot casting process, the entire furnace production cycle is controlled within 36 hours, greatly shortening the sample preparation time. After the furnace is taken out, 25 small square ingot silicon material samples can be obtained. The performance of the incoming silicon material can be quickly determined by comparing with the silicon material batch, avoiding the situation where a large number of silicon ingots are scrapped due to inaccurate silicon material quality determination caused by traditional methods.
[0010] 2. Crucible and special sample preparation and ingot casting process. The crucible is customized according to the size of the thermal field in the furnace. Under the premise of ensuring safety, the temperature gradient of the ingot is kept more reasonable. The short-cycle sample preparation process ensures that the small square ingots are free of shadows, hidden cracks and other problems when they are taken out of the furnace, which facilitates the rapid detection of the results in the process. BRIEF DESCRIPTION OF THE DRAWINGS
[0011] The present invention will be further described below with reference to the accompanying drawings and embodiments:
[0012] Figure 1 Schematic diagram of the internal structure of an embodiment of the present utility model.
[0013] Figure 2 Schematic diagram of the structure of the guard plate in the embodiment of the present utility model.
[0014] In the figure: 1. Water cooling plate; 2. Bottom hot plate; 3. Guard plate; 4. Crucible; 5. Silicon ingot; 6. Cover plate; 7. Insulation cage; 8. Side heater; 9. Top heater; 10. Base. DETAILED DESCRIPTION
[0015] like Figure 1 and Figure 2 As shown, the utility model provides a detection device for quickly and in batches determining the performance of incoming silicon materials, comprising a water-cooled plate 1, a bottom hot plate 2 fixed above the water-cooled plate 1, and a guard plate 3 fixed to the top of the bottom hot plate 2. The guard plate 3 is in a box structure and is connected to a cover plate 6 on the top. A crucible 4 is arranged in the guard plate 3, and ingot cavities are evenly distributed in the crucible 4. An outer cover of the guard plate 3 is provided with a heat-insulating cage 7, and a heater is arranged on the inner wall of the heat-insulating cage 7. An air flow channel is provided in the center of the bottom hot plate 2.
[0016] The cover plate 6 is connected to the lifting equipment, and the cover plate 6 is lifted by the lifting equipment to separate the cover plate 6 from the bottom hot spot 2; the crucible 4 is a conventional quartz crucible with a 5*5 material cavity inside. Different types of miscellaneous materials purchased from outside are loaded into 25 material cavities respectively, and each material cavity is loaded with 10-20kg, flush with the crucible mouth of the crucible 4. The crucible 4 is then placed in the guard plate 3 to form a whole, and the ingot is cast according to the normal ingot casting method. The ingot is evacuated and heated. In order to prevent the broken materials from being blown out of the crucible 4 in the early stage of melting, the air intake air flow is controlled at 20L / min. After the melting is completed, the silicon material in the furnace is cast into 25 small square ingots in conjunction with a special ingot casting process. The cycle from waiting for the material to discharging from the furnace is controlled within 36h.
[0017] After the silicon material is taken out of the furnace, the crucible 4 is removed to obtain regular small ingots, which are then ground and sent to the manufacturing process to test the resistance and minority carrier properties. The electrical performance quality of the silicon material is quickly determined to be qualified. Based on the process inspection, it is determined whether the quality of the incoming material meets the standards, thereby reducing the production accidents of silicon ingots being scrapped in batches due to inaccurate judgment of silicon material properties.
[0018] A gap is provided between the water cooling plate 1 and the bottom hot plate 2. The air flow channel is located in the middle of the bottom hot plate 2. Argon gas is transported to the inside of the closed insulation cage 7 through the air flow channel. The crucible 4 is heated by the heater inside the insulation cage 7 to realize ingot casting.
[0019] like Figure 1 As shown, in order to achieve omnidirectional heating of the silicon ingot 5 in the crucible 4, the heater comprises a top heater 9 fixedly arranged on the top of the heat-insulating cage 7 and a side heater 8 arranged on the inner wall of the heat-insulating cage 7.
[0020] like Figure 1 As shown, in order to facilitate the supply of argon gas to the interior of the guard plate 3, the silicon ingot 5 is cast. The bottom of the guard plate 3 is provided with a base 10 and is connected to the bottom hot plate 2 through the base 10. The bottom of the base 10 is provided with a supporting foot, and the air flow channel is located at the center below the base 10.
[0021] The bottom heat source 2 is used as the supporting structure of the base 10 to stably support the guard plate 3. The base 10 raises the guard plate 3 to form an air flow channel connecting the outside with the inside of the insulation cage 7.
[0022] like Figure 2 As shown. The top of the side wall of the guard plate 3 is provided with a notch. The cover plate 6 is inserted into the guard plate 3, and the edge of the cover plate 6 is in the notch, which makes it easy to remove the cover plate 6 from the guard plate 3.
Claims
1. A detection device for quickly determining the properties of incoming silicon materials in batches, characterized by: The invention comprises a water cooling plate (1), a bottom hot plate (2) fixed on the top of the water cooling plate (1), and a guard plate (3) fixed on the top of the bottom hot plate (2); the guard plate (3) is in a box structure and is connected to a cover plate (6) on the top; a crucible (4) is arranged in the guard plate (3); ingot casting cavities are evenly distributed in the crucible (4); an insulating cage (7) is arranged on the outer cover of the guard plate (3); a heater is arranged on the inner wall of the insulating cage (7); and an air flow channel is arranged in the center of the bottom hot plate (2).
2. A detection device for rapidly determining the properties of incoming silicon materials in batches as claimed in claim 1, characterized in that: The heater comprises a top heater (9) fixedly arranged on the top of the heat insulation cage (7) and a side heater (8) arranged on the inner side wall of the heat insulation cage (7).
3. A detection device for rapidly determining the properties of incoming silicon materials in batches as claimed in claim 1, characterized in that: A base (10) is provided at the bottom of the guard plate (3) and is connected to the bottom heat sink (2) via the base (10); a supporting foot is provided at the bottom of the base (10); and the airflow channel is located at the center below the base (10).
4. A detection device for rapidly determining the properties of incoming silicon materials in batches as claimed in claim 1, characterized in that: The top of the side wall of the guard plate (3) is provided with a notch.