Ultra-fast recovery IGBT (Insulated Gate Bipolar Translator) packaging structure and IGBT device

Abstract

The utility model discloses an ultra-fast recovery IGBT (Insulated Gate Bipolar Translator) packaging structure, which comprises a heat dissipation plate, a conducting strip laid on the heat dissipation plate, one or more chip groups welded on the conducting strip, and an electric connection unit for electrically connecting a chip of each chip group with the conducting strip, each chip group comprises an IGBT chip, a fly-wheel diode chip and a fast recovery diode chip, the fast recovery diode chip comprises a first fast recovery diode and a second fast recovery diode, and the conducting strips comprise a first conducting strip, a second conducting strip and a third conducting strip. The first conducting strip, the second conducting strip and the third conducting strip are sequentially arranged in the first direction, the C electrode of the IGBT chip and the negative electrode of the fly-wheel diode chip are welded to the first conducting strip in the first direction, the first fast recovery diode is welded to the second conducting strip, and the second fast recovery diode is welded to the third conducting strip. The utility model also discloses an IGBT device. The utility model has the advantages of flexible design, reasonable layout and wide applicability.

Description

Technical Field

[0001] The utility model relates to the field of semiconductors, in particular to an ultra-fast recovery IGBT packaging structure and an IGBT device. Background Art

[0002] IGBT (Insulated Gate Bipolar Transistor), an insulated gate bipolar transistor, is a composite fully controlled voltage-driven power semiconductor device composed of a bipolar junction transistor (BJT) and an insulated gate field effect transistor (MOS). It has the advantages of high input impedance of a metal-oxide-semiconductor field-effect transistor (MOSFET) and low on-state voltage drop of a power transistor (Giant Transistor, GTR). GTR has a low saturation voltage drop and a large current density, but a large drive current; MOSFET has a very small drive power and a fast switching speed, but a large on-state voltage drop and a small current density. IGBT combines the advantages of the above two devices, with low drive power and low saturation voltage drop. It is very suitable for use in converter systems with a DC voltage of 600V and above, such as AC motors, inverters, switching power supplies, lighting circuits, traction drives, and other fields.

[0003] The IGBT module includes an IGBT chip and an FRD diode chip, and the IGBT power module generally welds the IGBT chip and the diode chip on a heat dissipation substrate with a circuit, and then electrically connects the electrodes of the chip and the corresponding conductive structures on the circuit through a bonding wire or a bridge such as a CLIP. Among them, the positive and negative electrodes of the diode chip are generally electrically connected to the E pole and C pole of the IGBT chip, so that the diode chip serves as a freewheeling diode of the IGBT module. The diode chip needs to have a high-speed trr characteristic to reduce losses. Specifically, in inverter and motor drive applications using IGBTs, the freewheeling diode is used as a path for the reverse current generated during switching.

[0004] However, conventional IGBT chips are only used as a path for the reverse current generated during switching through a freewheeling diode, and their rapid recovery performance is still poor. For this reason, referring to Chinese patent CN101290927, in existing IGBT devices with freewheeling diodes, a variety of diodes are set to increase the freewheeling and recovery characteristics of the IGBT device, but in its packaging structure, the diodes and the IGBT chip are installed on a circuit board, so that this connection method can only set the diodes in parallel and connect them between the E pole and the C pole of the IGBT chip. The circuit setting is rigid and it is difficult to flexibly adapt to the rapid recovery structure of different IGBT modules, which limits the recovery function of the IGBT module, makes it difficult to flexibly design, and makes wiring difficult. Even gold wires can only be used for electrical connection, making the electrical connection of the IGBT device unstable.

[0005] Therefore, there is an urgent need for an ultra-fast recovery IGBT packaging structure and an IGBT device that can solve the above problems. Utility Model Content

[0006] The utility model aims to provide an ultra-fast recovery IGBT packaging structure and an IGBT device, which have flexible design, wide applicability, reasonable layout and are convenient for setting electrical connection units.

[0007] In order to achieve the above-mentioned purpose, the utility model provides an ultra-fast recovery IGBT packaging structure, including a heat sink, a conductive sheet laid on the heat sink, one or more chip groups welded on the conductive sheet, and an electrical connection unit electrically connecting the chip and the conductive sheet of each chip group together, each of the chips group includes an IGBT chip, a freewheeling diode chip, and a fast recovery diode chip, the fast recovery diode chip includes a first fast recovery diode and a second fast recovery diode, the conductive sheet includes a first conductive sheet, a second conductive sheet and a third conductive sheet, the first conductive sheet, the second conductive sheet and the third conductive sheet are arranged in sequence along a first direction, the C pole of the IGBT chip and the negative electrode of the freewheeling diode chip are welded to the first conductive sheet along the first direction, the first fast recovery diode is welded to the second conductive sheet, and the second fast recovery diode is welded to the third conductive sheet.

[0008] Preferably, the conductive sheet further includes a fourth conductive sheet and a fifth conductive sheet, each of the electrical connection units includes at least three groups of electrical connectors, the cathode of the first fast recovery diode is welded to the second conductive sheet, the cathode of the second fast recovery diode is welded, the first group of electrical connectors electrically connects the E pole of the IGBT chip, the positive electrode of the freewheeling diode chip and the fourth conductive sheet together, the second group of electrical connectors electrically connects the anode of the first fast recovery diode and the fifth conductive sheet together, and the third group of electrical connectors electrically connects the anode of the second fast recovery diode, the second conductive sheet and the fourth conductive sheet together. This solution can form an IGBT structure with faster and better fast recovery effect.

[0009] More preferably, three groups of terminal welding areas for welding power terminals are formed on the first conductive sheet, the fifth conductive sheet and the third conductive sheet respectively, and the third conductive sheet has a plurality of protruding arms protruding toward the second conductive sheet, and the second conductive sheet is formed with grooves that match the protruding arms and have a spacing, so that the third conductive sheet and the second conductive sheet have a staggered structure, and the terminal welding areas on the third conductive sheet correspond to the protruding arms one by one and are formed on the protruding arms. This solution forms two groups of installation areas for power terminals on the conductive sheet for welding fast recovery diodes, so that the external power terminals are directly connected to the fast recovery diodes to achieve ultra-fast recovery of the IGBT module.

[0010] Specifically, each group of the electrical connection parts includes one or more electrical connection monomers, and each of the electrical connection monomers is a gold wire or a CLIP part. The utility model can use the CLIP part as the electrical connection monomer, and the welding stability is high.

[0011] Specifically, the first conductive sheet, the fourth conductive sheet, the fifth conductive sheet, the second conductive sheet and the third conductive sheet are sequentially arranged along the first direction, and the layout is compact and reasonable.

[0012] More specifically, the electrical connectors are all arranged along the first direction, which facilitates welding of the electrical connectors.

[0013] Specifically, the second group of electrical connectors and the third group of electrical connectors are CLIP parts respectively, and a part of the third group of electrical connectors spans over the second group of electrical connectors, which can effectively save space and has high welding stability.

[0014] Preferably, there are multiple chipsets, and the electrical connection unit includes electrical connection components corresponding to the chipsets, wherein the second group of electrical connection components corresponding to two chipsets are shared, and the third group of electrical connection components are shared.

[0015] Among them, the ultra-fast recovery IGBT packaging structure also includes a sixth conductive plate located on the side of the first conductive plate away from the second conductive plate, and the electrical connection unit includes a fourth group of electrical connectors that electrically connect the G pole of the IGBT chip and the sixth conductive plate together.

[0016] The utility model also provides an IGBT device, comprising the above-mentioned IGBT packaging structure, power terminals and signal terminals electrically connected to the IGBT packaging structure, and a housing for mounting the IGBT packaging structure, the power terminals and the signal terminals.

[0017] The utility model is an IGBT packaging unit and an IGBT device with multiple fast recovery diode chips. Three different conductive sheets for welding diode chips are arranged in the IGBT packaging unit: a first conductive sheet, a second conductive sheet and a third conductive sheet. The IGBT chip and the freewheeling diode chip are installed on one conductive sheet, and two different fast recovery diode chips are installed on two conductive sheets respectively. The three conductive sheets are arranged in sequence along the first direction. Compared with the prior art, the utility model still installs the freewheeling diode chip in the first conductive sheet where the IGBT chip is installed in the fast recovery IGBT packaging unit, so that the freewheeling diode and the IGBT chip are designed close to each other, and the freewheeling current can quickly flow into the freewheeling diode when the IGBT chip is in action. On the other hand, the utility model installs the two freewheeling diode chips on different conductive sheets respectively, which can be applied to a variety of different fast recovery schemes, and the design is more flexible and has wide applicability. On the other hand, the fast recovery diode of the utility model is arranged on one side of the IGBT main structure and is arranged along one direction, with a reasonable layout, which is convenient for setting the electrical connection unit. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] Figure 1 It is a three-dimensional diagram of the IGBT device of the utility model.

[0019] Figure 2 It is a three-dimensional diagram of the IGBT device of the utility model with the shell removed.

[0020] Figure 3 It is an exploded view of the IGBT device of the utility model.

[0021] Figure 4 It is a three-dimensional diagram of the IGBT packaging structure of the utility model.

[0022] Figure 5 yes Figure 4 Enlarged view of part a.

[0023] Figure 6 yes Figure 4 Enlarged view of part b.

[0024] Figure 7 It is a top view of the IGBT packaging structure of the utility model.

[0025] Figure 8 It is an exploded view of the IGBT packaging structure of the utility model.

[0026] Fig. 9 It is a layout diagram of the conductive sheet and the chip in the IGBT packaging structure of the utility model. DETAILED DESCRIPTION

[0027] In order to explain the technical content, structural features, achieved objectives and effects of the present invention in detail, the following is a detailed description in conjunction with the implementation modes and the accompanying drawings.

[0028] refer to Figures 1 to 3 The utility model discloses an IGBT device 1, comprising the above-mentioned IGBT packaging structure 4, a power terminal 2 and a signal terminal 3 electrically connected to the IGBT packaging structure 4, and a housing 5 for mounting the IGBT packaging structure 4, the power terminal 2, and the signal terminal 3.

[0029] refer to Figure 3 and Figure 4 The IGBT packaging structure 4 includes a heat sink 10, a conductive sheet laid on the heat sink 10, one or more chip groups welded on the conductive sheet, and an electrical connection unit that electrically connects the chip of each chip group and the conductive sheet together.

[0030] refer to Fig. 9 Each of the chipsets includes an IGBT chip 51, a freewheeling diode chip 52, and a fast recovery diode chip. The fast recovery diode chip includes a first fast recovery diode 53 and a second fast recovery diode 54. The conductive sheet includes a first conductive sheet 21, a second conductive sheet 22, a third conductive sheet 23, a fourth conductive sheet 24, and a fifth conductive sheet 25. The first conductive sheet 21, the second conductive sheet 22, and the third conductive sheet 23 are sequentially arranged along the first direction. The C pole of the IGBT chip 51 and the negative electrode of the freewheeling diode chip 52 are welded to the first conductive sheet 21 along the first direction, the negative electrode of the first fast recovery diode 53 is welded to the two conductive sheets, and the negative electrode of the second fast recovery diode 54 is welded to the third conductive sheet 23.

[0031] refer to Figures 4 to 6Each of the electrical connection units includes at least three groups of electrical connectors. The first group of electrical connectors 31 electrically connects the E pole of the IGBT chip 51, the positive electrode of the freewheeling diode chip 52 and the fourth conductive sheet 24 together. The second group of electrical connectors 32 electrically connects the positive pole of the first fast recovery diode 53 and the fifth conductive sheet 25 together. The third group of electrical connectors 33 electrically connects the positive pole of the second fast recovery diode 54, the second conductive sheet 22 and the fourth conductive sheet 24 together.

[0032] refer to Figures 7 to 9 Terminal welding areas 211, 251, and 231 for welding three power terminals are respectively formed on the first conductive sheet 21, the fifth conductive sheet 25, and the third conductive sheet 23, and the third conductive sheet 23 protrudes toward the second conductive sheet 22 with a plurality of protruding arms 232, and the second conductive sheet 22 is formed with grooves 221 that are concave-convex and match the protruding arms 232 and have a spacing, so that the third conductive sheet 23 and the second conductive sheet 22 have a staggered structure, and the terminal welding area 231 on the third conductive sheet 23 corresponds one-to-one to the protruding arms 232 and is formed on the protruding arms 232.

[0033] Among them, the first conductive sheet 21 , the fourth conductive sheet 24 , the fifth conductive sheet 25 , the second conductive sheet 22 and the third conductive sheet 23 are sequentially arranged along the first direction, and the layout is compact and reasonable.

[0034] refer to Figure 4 and Figure 5 The ultra-fast recovery IGBT package structure 4 further includes a sixth conductive sheet 26 located on a side of the first conductive sheet 21 away from the second conductive sheet 22, and the electrical connection unit includes a fourth group of electrical connectors 34 electrically connecting the G pole of the IGBT chip 51 and the sixth conductive sheet 26. The electrical connectors (31, 32, 33, 34) are all arranged along the first direction to facilitate welding of the electrical connectors.

[0035] Wherein, each group of the electrical connection components includes one or more electrical connection units, and each electrical connection unit is a gold wire or a CLIP component. In this embodiment, each group of the electrical connection components is a single CLIP component.

[0036] Specifically, the second group of electrical connectors 32 and the third group of electrical connectors 33 are CLIP components respectively, and a portion of the third group of electrical connectors 33 spans over the second group of electrical connectors 32, which can effectively save space.

[0037] refer to Figure 4 and Figure 8, the chipset has 4 groups, the electrical connection unit includes a second group of electrical connectors 32 corresponding to the chipset, and a third group of electrical connectors 33 corresponding to the middle two chipset, so that the second group of electrical connectors 32 and the third group of electrical connectors 33 corresponding to the middle two chipset can be made wider, with good heat dissipation, stable mounting during mounting, and good soldering effect of CLIP. Of course, the number of chipsets is not limited to 4, and can also be other numbers.

[0038] refer to Figure 5 The first group of electrical connectors 31 is a three-point welded CLIP component, including an E-pole welding piece 311 welded to the E-pole of the IGBT chip 51, a first welding piece 312 welded to the freewheeling diode chip 52, a second welding piece 313 welded to the fourth conductive piece 24, a first connecting bridge 314 connected between the E-pole welding piece 311 and the first welding piece 312, and a second connecting bridge 315 connected between the first welding piece 312 and the second welding piece 313, wherein the bridge surfaces of the first connecting bridge 314 and the second connecting bridge 315 are higher than the E-pole welding piece 311, the first welding piece 312 and the second welding piece 313. The E-pole welding piece 311 and the first welding piece 312 are provided with one or more fixing holes 3111.

[0039] refer to Figure 6 The second group of electrical connectors 32 is a two-point welded CLIP part, including a third welding piece 322 welded on the positive electrode of the first fast recovery diode 53, a fourth welding piece 321 welded on the fifth conductive piece 25, and a third connecting bridge 323 connecting the third welding piece 322 and the fourth welding piece 321, wherein the bridge surface of the third connecting bridge 323 is higher than the third welding piece 322 and the fourth welding piece 321.

[0040] refer to Figure 6 The third group of electrical connectors 33 is a three-point welded CLIP member, including a front welding piece 331 welded on the fourth conductive piece 24, a middle welding piece 332 welded on the second conductive piece 22 adjacent to the second fast recovery diode 54, a rear welding piece 333 welded on the positive electrode of the second fast recovery diode 54, a front connecting bridge 334 connecting the front welding piece 331 and the middle welding piece 332, and a rear connecting bridge 335 connecting the middle welding piece 332 and the rear welding piece 333. The bridge surfaces of the front connecting bridge 334 and the rear connecting bridge 335 are higher than the front welding piece 331, the middle welding piece 332 and the rear welding piece 333, the front connecting bridge 334 spans over the second group of electrical connectors 32, and has a gap with the bridge surface of the third connecting bridge 323, and the bridge surface of the front connecting bridge 334 is higher than the bridge surface of the rear connecting bridge 335.

[0041] refer to Figure 5 The front end of the fourth set of electrical connectors 34 is welded to the sixth conductive sheet 26, and the rear end extends laterally to form two rear soldering feet which are respectively welded to the G poles of the two IGBT chips 51, wherein the connecting bridge connecting the front end and the two rear soldering feet is T-shaped.

[0042] In this embodiment, the heat sink 10 is a ceramic plate, but it can also be made of other materials. The conductive sheet and the electrical connector are copper, which has good conductivity and heat dissipation efficiency. Of course, it is not limited to this, and heat sinks, conductive sheets and electrical connectors made of other materials can also be used.

[0043] The above disclosure is only the preferred embodiment of the present invention, which certainly cannot be used to limit the scope of rights of the present invention. Therefore, equivalent changes made according to the scope of the patent application of the present invention are still within the scope covered by the present invention.

Claims

1. An ultra-fast recovery IGBT packaging structure, comprising a heat sink, a conductive sheet laid on the heat sink, one or more chipsets welded on the conductive sheet, and an electrical connection unit electrically connecting the chips and the conductive sheet of each chipset, each chipset comprising an IGBT chip, a freewheeling diode chip, and a fast recovery diode chip, characterized in that: The fast recovery diode chip includes a first fast recovery diode and a second fast recovery diode, the conductive sheet includes a first conductive sheet, a second conductive sheet, and a third conductive sheet, the first conductive sheet, the second conductive sheet, and the third conductive sheet are arranged in sequence along a first direction, the C pole of the IGBT chip and the negative electrode of the freewheeling diode chip are welded to the first conductive sheet along the first direction, the first fast recovery diode is welded to the two conductive sheets, and the second fast recovery diode is welded to the third conductive sheet.

2. The ultra-fast recovery IGBT packaging structure according to claim 1, characterized in that: The conductive sheet also includes a fourth conductive sheet and a fifth conductive sheet. The negative electrode of the first fast recovery diode is welded to the second conductive sheet, and the negative electrode of the second fast recovery diode is welded to the third conductive sheet. Each of the electrical connection units includes at least three groups of electrical connectors. The first group of electrical connectors electrically connects the E pole of the IGBT chip, the positive electrode of the freewheeling diode chip and the fourth conductive sheet together. The second group of electrical connectors electrically connects the positive electrode of the first fast recovery diode and the fifth conductive sheet together. The third group of electrical connectors electrically connects the positive electrode of the second fast recovery diode, the second conductive sheet and the fourth conductive sheet together.

3. The ultra-fast recovery IGBT packaging structure according to claim 2, characterized in that: Three groups of terminal welding areas for welding power terminals are respectively formed on the first conductive sheet, the fifth conductive sheet and the third conductive sheet, and the third conductive sheet has a plurality of protruding arms protruding toward the second conductive sheet, and the second conductive sheet is formed with grooves that are concave-convexly matched with the protruding arms and have a spacing, so that the third conductive sheet and the second conductive sheet have a staggered structure, and the terminal welding areas on the third conductive sheet correspond one-to-one to the protruding arms and are formed on the protruding arms.

4. The ultra-fast recovery IGBT packaging structure according to claim 2, characterized in that: Each group of the electrical connection members includes one or more electrical connection units, and each of the electrical connection units is a gold wire or a CLIP member.

5. The ultra-fast recovery IGBT packaging structure according to claim 2, characterized in that: The first conductive sheet, the fourth conductive sheet, the fifth conductive sheet, the second conductive sheet and the third conductive sheet are sequentially arranged along the first direction.

6. The ultra-fast recovery IGBT packaging structure according to claim 5, characterized in that: The electrical connectors are all arranged along the first direction.

7. The ultra-fast recovery IGBT packaging structure according to claim 6, characterized in that: The second group of electrical connectors and the third group of electrical connectors are CLIP components respectively, and a portion of the third group of electrical connectors spans over the second group of electrical connectors.

8. The ultra-fast recovery IGBT packaging structure according to claim 2, characterized in that: There are multiple chipsets, and the electrical connection unit includes electrical connection parts corresponding to the chipsets, wherein the electrical connection parts of the second group corresponding to the two chipsets are shared, and the electrical connection parts of the third group are shared.

9. The ultra-fast recovery IGBT packaging structure according to claim 1, characterized in that: It also includes a sixth conductive sheet located on a side of the first conductive sheet away from the second conductive sheet, and the electrical connection unit includes a fourth group of electrical connectors electrically connecting the G pole of the IGBT chip and the sixth conductive sheet.

10. An IGBT device, characterized in that: It comprises the IGBT packaging structure according to any one of claims 1 to 9, a power terminal and a signal terminal electrically connected to the IGBT packaging structure, and a shell for mounting the IGBT packaging structure, the power terminal and the signal terminal.

Images