Reaction furnace

Abstract

The utility model relates to a reaction furnace. The reaction furnace comprises a furnace body, a bearing frame and an air inlet pipe assembly, the furnace body is provided with a furnace cavity, and the bearing frame is arranged in the furnace cavity and used for bearing wafers. The air inlet pipe assembly comprises two air inlet pipes with one ends extending into the furnace cavity, one air inlet pipe comprises a first pipe section located in the furnace cavity, and the other air inlet pipe comprises a second pipe section located in the furnace cavity. The length of the first pipe section is equal to that of the second pipe section, the first pipe section and the second pipe section are distributed around at least part of the same wafer, the first pipe section is provided with a plurality of first air outlet parts extending into the furnace chamber, and the second pipe section is provided with a plurality of second air outlet parts extending into the furnace chamber; the plurality of first air outlet parts and the plurality of second air outlet parts are arranged at intervals around the corresponding wafers. Therefore, the film thickness uniformity of the thin film layer deposited on the wafer can be improved, the use of a rotating mechanism for driving the wafer to rotate can be abandoned, and the yield of the wafer can be effectively improved to a certain extent.

Description

Technical Field

[0001] The present application relates to the field of semiconductor manufacturing technology, and in particular to a reaction furnace. Background Art

[0002] The reactor includes a furnace body, a wafer boat disposed in the furnace body, and a rotating mechanism for driving the wafer boat to rotate. However, in a traditional reactor, when the rotating mechanism drives the wafer boat to rotate, scratches are easily caused between the wafer and the wafer boat, thereby causing a decrease in the yield of the wafer. Utility Model Content

[0003] Based on this, it is necessary to provide a reaction furnace to solve the problem of reduced wafer yield due to scratches between wafers and wafer boats.

[0004] The present application provides a reaction furnace, the reaction furnace comprising

[0005] A furnace body having a furnace cavity;

[0006] A carrier, disposed in the furnace chamber and used for carrying wafers; and

[0007] An air inlet pipe assembly, wherein the air inlet pipe assembly includes two air inlet pipes with one end extending into the furnace cavity, wherein one of the air inlet pipes includes a first pipe section located in the furnace cavity, and the other air inlet pipe includes a second pipe section located in the furnace cavity;

[0008] The first tube segment and the second tube segment are of equal length, and the first tube segment and the second tube segment respectively surround at least a portion of the same wafer;

[0009] The first pipe section is provided with a plurality of first gas outlets extending into the furnace chamber, and the second pipe section is provided with a plurality of second gas outlets extending into the furnace chamber. The plurality of first gas outlets and the plurality of second gas outlets are arranged around the corresponding wafers at intervals.

[0010] In one embodiment, the cross section of the wafer is circular;

[0011] The first tube segment and the second tube segment are centrally symmetrically arranged with the central axis of the wafer as a reference datum.

[0012] In one embodiment, the cross-section of the wafer is circular; in the air inlet pipe assembly, the multiple first air outlets on the first pipe segment and the multiple second air outlets on the second pipe segment correspond one to one, and the first air outlets and the corresponding second air outlets are symmetrically arranged with the central axis of the wafer as a reference datum.

[0013] In one embodiment, the first pipe section is curved and extends in an arc shape around the corresponding wafer, and a plurality of the first air outlets are arranged at equal intervals along the arc length direction of the first pipe section; and / or

[0014] The second pipe section is bent and extended in an arc shape around the corresponding wafer, and a plurality of the second air outlets are arranged at equal intervals along the arc length direction of the second pipe section.

[0015] In one embodiment, the first gas outlet portion includes a plurality of first gas outlets penetrating through the side wall of the first pipe section and arranged toward the corresponding wafer; and / or

[0016] The second gas outlet portion includes a plurality of second gas outlets penetrating through a side wall of the second pipe section and disposed toward the corresponding wafers.

[0017] In one embodiment, the cross section of the wafer is circular;

[0018] The first gas outlet portion comprises a first gas outlet, the first gas outlet is circular, and a central axis of the first gas outlet is parallel to a radial direction of the wafer; and / or

[0019] The second gas outlet portion includes a second gas outlet, the second gas outlet is circular, and a central axis of the second gas outlet is parallel to a radial direction of the wafer.

[0020] In one embodiment, the carrier is used to carry a plurality of wafers spaced apart along the axial direction of the furnace chamber;

[0021] The reaction furnace comprises a plurality of the air inlet pipe assemblies arranged at intervals along the axial direction of the furnace chamber, and two air supply pipes;

[0022] In each of the air intake pipe assemblies, one end of one of the air intake pipes away from the first pipe section is connected to one of the air supply pipes, and one end of the other air intake pipe away from the second pipe section is connected to the other air supply pipe.

[0023] In one embodiment, each of the air inlet pipes is disposed spirally and surrounds the corresponding wafer from the inside to the outside; the spiral directions of the two air inlet pipes of the same air inlet pipe assembly are opposite to each other.

[0024] In one embodiment, along the axial direction of the furnace chamber, among the multiple air inlet pipes in the multiple air inlet pipe assemblies connected to the same air supply pipe, the air inlet pipe closer to the air supply pipe has more turns around the corresponding portion of the wafer.

[0025] In one embodiment, in a plurality of air intake pipe assemblies, the first air outlet portions on the plurality of air intake pipes connected to the same air supply pipe have the same structure, and the first air outlet portions corresponding to the plurality of air intake pipes connected to the same air supply pipe have the same orientation;

[0026] In the plurality of air intake pipe assemblies, the second air outlet portions on the plurality of air intake pipes connected to the same air supply pipe have the same structure, and the corresponding second air outlet portions on the plurality of air intake pipes connected to the same air supply pipe have the same orientation.

[0027] In the technical solution of the present application, when the reaction furnace is in use, the reaction gas can enter the furnace chamber respectively from the two air inlet pipes of the same air inlet pipe assembly, and the reaction gas can enter the furnace chamber through the multiple first air outlet portions on the first pipe section of one of the air inlet pipes, and the reaction gas can also enter the furnace chamber through the multiple second air outlet portions on the second pipe section of the other air inlet pipe. Combined with the first pipe section and the second pipe section being staggered around the same wafer, the reaction gas flowing into the furnace chamber from the multiple first air outlet portions on the first pipe section can arrive at the furnace chamber at approximately the same time as the reaction gas flowing into the furnace chamber from the multiple second air outlet portions on the second pipe section, and the multiple first air outlet portions and the multiple second air outlet portions are arranged around the corresponding wafer intervals, so that the reaction gas flowing into the furnace chamber through the multiple first air outlet portions and the reaction gas flowing into the furnace chamber through the multiple second air outlet portions can arrive at the furnace chamber at approximately the same time. The reaction gas flowing into the furnace chamber through the multiple second gas outlets can flow toward the corresponding wafers from different directions, and since the reaction gas flows out from the first pipe section and the second pipe section arranged around the wafer respectively, the reaction gas flowing into the furnace chamber through the multiple first gas outlets and the reaction gas flowing into the furnace chamber through the multiple second gas outlets can flow in the furnace chamber in a swirling manner. In this way, on the one hand, the reaction gas can be evenly contacted with the corresponding wafer, thereby improving the uniformity of the film thickness of the thin film layer deposited on the wafer. On the other hand, the use of the air inlet pipe assembly of the present application to guide the reaction gas can achieve the effect of making the reaction gas flow in the furnace chamber in a swirling manner, so the use of a rotating mechanism for driving the wafer to rotate can be discarded, which can effectively improve the wafer yield to a certain extent. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] Figure 1 A schematic structural diagram of a reactor in one embodiment of the present application is shown.

[0029] Figure 2 A schematic top view of two air inlet pipes (partial structure) and a wafer in an embodiment of the present application is shown.

[0030] Figure 3 A schematic structural diagram of a first air outlet portion in another embodiment of the present application is shown.

[0031] Figure numerals: 10, reactor; 110, furnace body; 111, inner wall; 112, outer wall; 120, carrier frame; 130, air inlet pipe assembly; 131, air inlet pipe; 1311, first pipe section; 1312, second pipe section; 1301, first air inlet pipe assembly; 1302, second air inlet pipe assembly; 1303, third air inlet pipe assembly; 140, air supply pipe; 150, flow regulator; A, furnace chamber; B1, first air outlet portion; B11, first air outlet; B111, first center air outlet; B112, first inner ring air outlet; B113, first outer ring air outlet; B2, second air outlet portion; B21, second air outlet; C, air outlet channel; 20, wafer. DETAILED DESCRIPTION

[0032] In order to make the above-mentioned purposes, features and advantages of the present application more obvious and easy to understand, the specific implementation methods of the present application are described in detail below in conjunction with the accompanying drawings. In the following description, many specific details are set forth to facilitate a full understanding of the present application. However, the present application can be implemented in many other ways different from those described herein, and those skilled in the art can make similar improvements without violating the connotation of the present application, so the present application is not limited by the specific embodiments disclosed below.

[0033] In the description of the present application, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise", "axial", "radial", "circumferential" and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present application and simplifying the description, and do not indicate or imply that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the present application.

[0034] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" and "second" may explicitly or implicitly include at least one of the features. In the description of this application, the meaning of "plurality" is at least two, such as two, three, etc., unless otherwise clearly and specifically defined.

[0035] In this application, unless otherwise clearly specified and limited, the terms "installed", "connected", "connected", "fixed" and the like should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements, unless otherwise clearly defined. For ordinary technicians in this field, the specific meanings of the above terms in this application can be understood according to specific circumstances.

[0036] In the present application, unless otherwise clearly specified and limited, a first feature being “above” or “below” a second feature may mean that the first and second features are in direct contact, or the first and second features are in indirect contact through an intermediate medium. Moreover, a first feature being “above”, “above”, and “above” a second feature may mean that the first feature is directly above or obliquely above the second feature, or simply means that the first feature is higher in level than the second feature. A first feature being “below”, “below”, and “below” a second feature may mean that the first feature is directly below or obliquely below the second feature, or simply means that the first feature is lower in level than the second feature.

[0037] It should be noted that when an element is referred to as being "fixed to" or "disposed on" another element, it may be directly on the other element or there may be a central element. When an element is considered to be "connected to" another element, it may be directly connected to the other element or there may be a central element at the same time. The terms "vertical", "horizontal", "upper", "lower", "left", "right" and similar expressions used herein are for illustrative purposes only and are not intended to be the only implementation method.

[0038] After research, it was found that in traditional reactors, since the direction of the air inlet is relatively single, a rotating mechanism is needed to drive the wafer boat to rotate so that the gas entering the furnace body through the air inlet can contact the wafers on the wafer boat more evenly. However, in the process of the rotating mechanism driving the wafer boat to rotate, scratches are likely to occur between the wafers and the wafer boat, which in turn leads to a decrease in the yield of the wafers.

[0039] In order to solve the problem of reduced wafer yield due to scratches between the wafer and the wafer boat, the present application designs a reactor that can utilize two air inlet pipes to allow reaction gases from different directions to enter the furnace body of the reactor respectively, thereby improving the uniformity of contact between the reaction gas and the wafer, thereby improving the uniformity of the film thickness of the thin film layer deposited on the wafer, and at the same time, the use of a rotating mechanism can be abandoned, which can effectively improve the wafer yield.

[0040] Figure 1 A schematic structural diagram of a reaction furnace 10 in an embodiment of the present application is shown.

[0041] See also Figure 1 , and refer to Figure 2 The reactor 10 provided in one embodiment of the present application includes a furnace body 110, a carrier 120 and an air inlet pipe assembly 130. The furnace body 110 has a furnace chamber A, and the carrier 120 is disposed in the furnace chamber A and is used to carry a wafer 20. The carrier 120 is used to carry the wafer 20 and to fix the wafer 20 in the furnace chamber A so that the reaction gas entering the furnace chamber A reacts with the wafer 20 and deposits a thin film layer on the wafer 20.

[0042] The furnace body 110 includes but is not limited to a low-pressure furnace body such as silicon nitride, polysilicon or silicon oxide, and silicon nitride, polysilicon or silicon oxide can be deposited in the furnace body 110 and on the wafer 20 .

[0043] The carrier 120 may be a wafer boat, or other components for carrying the wafers 20 and enabling the reaction gas entering the furnace chamber A to contact the wafers 20 .

[0044] The air inlet pipe assembly 130 includes two air inlet pipes 131 with one end extending into the furnace cavity A, wherein one air inlet pipe 131 includes a first pipe section 1311 located in the furnace cavity A, and the other air inlet pipe 131 includes a second pipe section 1312 located in the furnace cavity A, the first pipe section 1311 and the second pipe section 1312 are equal in length, and the first pipe section 1311 and the second pipe section 1312 respectively surround at least part of the same wafer 20, and the first pipe section 1311 is provided with a plurality of first air outlet portions B1 extending into the furnace cavity A, and the second pipe section 1312 is provided with a plurality of second air outlet portions B2 extending into the furnace cavity A, and the plurality of first air outlet portions B1 and the plurality of second air outlet portions B2 are arranged at intervals around the corresponding wafer 20.

[0045] It can be understood that the plurality of first air outlets B1 and the plurality of second air outlets B2 are communicated with the furnace cavity A respectively.

[0046] In this way, when the reactor 10 is in use, the reaction gas can enter the furnace chamber A from the two air inlet pipes 131 of the same air inlet pipe assembly 130 respectively, and the reaction gas can enter the furnace chamber A through the multiple first gas outlets B1 on the first pipe section 1311 of one of the air inlet pipes 131, and the reaction gas can also enter the furnace chamber A through the multiple second gas outlets B2 on the second pipe section 1312 of the other air inlet pipe 131. In combination with the fact that the lengths of the first pipe section 1311 and the second pipe section 1312 are equal, and the first pipe section 1311 and the second pipe section 1312 respectively surround at least a portion of the same wafer 20, the reaction gas flowing into the furnace chamber A from the multiple first gas outlets B1 on the first pipe section 1311 can arrive at the furnace chamber A at substantially the same time as the reaction gas flowing into the furnace chamber A from the multiple second gas outlets B2 on the second pipe section 1312, and the multiple first gas outlets B1 and the multiple second gas outlets B2 are arranged at intervals around the corresponding wafer 20, so that The reaction gas flowing into the furnace chamber A through the multiple first gas outlets B1 and the reaction gas flowing into the furnace chamber A through the multiple second gas outlets B2 can flow toward the corresponding wafer 20 from different directions, and since the reaction gas flows out from the first pipe section 1311l and the second pipe section 1312 respectively arranged around the wafer 20, the reaction gas flowing into the furnace chamber A through the multiple first gas outlets B1 and the reaction gas flowing into the furnace chamber A through the multiple second gas outlets B2 can flow in the furnace chamber A in a swirling manner. In this way, on the one hand, the reaction gas can be evenly contacted with the corresponding wafer 20, thereby improving the uniformity of the film thickness of the thin film layer deposited on the wafer 20. On the other hand, the use of the air inlet pipe assembly 130 of the present application to guide the reaction gas can achieve the effect of making the reaction gas flow in the furnace chamber A in a swirling manner, so the use of a rotating mechanism for driving the wafer 20 to rotate can be discarded, which can effectively improve the yield of the wafer 20 to a certain extent.

[0047] In some embodiments, the cross-section of the wafer 20 is circular, and the first tube segment 1311 and the second tube segment 1312 are centrally symmetrically arranged with the central axis of the wafer 20 as a reference datum.

[0048] In this way, the reaction gas flowing into the furnace chamber A from the multiple first gas outlets B1 on the first pipe segment 1311 and the reaction gas flowing into the furnace chamber A from the multiple second gas outlets B2 on the second pipe segment 1312 can arrive at the furnace chamber A at approximately the same time, thereby enabling the reaction gas to contact the corresponding wafer 20 more evenly, thereby improving the uniformity of the film thickness of the thin film layer deposited on the wafer 20.

[0049] In some embodiments, the cross section of the wafer 20 is circular. In the air inlet pipe assembly 130, the first air outlets B1 on the first pipe section 1311 and the second air outlets B2 on the second pipe section 1312 correspond to each other, and the first air outlets B1 and the corresponding second air outlets B2 are symmetrically arranged with the central axis of the wafer 20 as a reference.

[0050] Since the first gas outlet B1 and the corresponding second gas outlet B2 are symmetrically arranged with the central axis of the wafer 20 as a reference, the reaction gas flowing out of the first gas outlet B1 can flow in a swirling manner with the reaction gas flowing out of the second gas outlet B2 in the furnace chamber A respectively, which increases the possibility of collision with each other, thereby improving the reaction rate. In addition, since the first gas outlet B1 and the corresponding second gas outlet B2 are symmetrically arranged, the reaction gas flowing out of the first gas outlet B1 and the corresponding second gas outlet B2 can reach the corresponding wafer 20 at approximately the same time and in opposite directions. Combined with the reaction gas flowing in a swirling manner in the furnace chamber A, the reaction gas can contact the corresponding wafer 20 more evenly, thereby improving the uniformity of the film thickness of the thin film layer deposited on the wafer 20.

[0051] In some embodiments, the first tube segment 1311 is curved and extends in an arc shape around the corresponding wafer 20 , and a plurality of first gas outlets B1 are arranged at equal intervals along the arc length direction of the first tube segment 1311 .

[0052] Since the multiple first gas outlets B1 are arranged at equal intervals along the arc length direction of the first tube segment 1311 , the reaction gas flowing out of the multiple first gas outlets B1 can contact the corresponding wafers 20 more evenly, which can effectively improve the uniformity of the film thickness of the thin film layer deposited on the wafer 20 .

[0053] In some other embodiments, the second tube segment 1312 is curved and extends in an arc shape around the corresponding wafer 20 , and the plurality of second air outlet portions B2 are arranged at equal intervals along the arc length direction of the second tube segment 1312 .

[0054] Since the multiple second gas outlets B2 are arranged at equal intervals along the arc length direction of the second pipe segment 1312, the reaction gas flowing out of the multiple second gas outlets B2 can contact the corresponding wafers 20 more evenly, which can effectively improve the uniformity of the film thickness of the thin film layer deposited on the wafer 20.

[0055] In some other embodiments, the first pipe segment 1311 is bent and extended in an arc shape around the corresponding wafer 20, and a plurality of first air outlet portions B1 are arranged at equal intervals along the arc length direction of the first pipe segment 1311, and the second pipe segment 1312 is bent and extended in an arc shape around the corresponding wafer 20, and a plurality of second air outlet portions B2 are arranged at equal intervals along the arc length direction of the second pipe segment 1312.

[0056] In this way, the reaction gas flowing out from the plurality of first gas outlets B1 and the plurality of second gas outlets B2 can contact the corresponding wafers 20 more uniformly, and the uniformity of the film thickness of the thin film layer deposited on the wafer 20 can be better improved.

[0057] In some embodiments, see Figure 3 The first gas outlet portion B1 includes a plurality of first gas outlets B11 penetrating through the side wall of the first pipe section 1311 and disposed toward the corresponding wafer 20 .

[0058] Optionally, the multiple first air outlets B11 include a first central air outlet B111, a multiple first inner circle air outlets B112 evenly arranged circumferentially around the first central air outlet B111, and a multiple first outer circle air outlets B113 evenly arranged circumferentially around the first central air outlet B111, and the first outer circle air outlet B113 is located on the outside of the first inner circle air outlet B112.

[0059] That is, the first gas outlet portion B1 is constructed as a porous structure, so that the reaction gas flowing out from the plurality of first gas outlets B11 can more fully contact the corresponding wafer 20 , which can effectively improve the quality of the thin film layer deposited on the wafer 20 .

[0060] In some other embodiments, the second gas outlet portion B2 includes a plurality of second gas outlets B21 penetrating through the side wall of the second tube section 1312 and disposed toward the corresponding wafer 20 .

[0061] Optionally, the multiple second air outlets B21 include a second central air outlet, a multiple second inner ring air outlets evenly arranged circumferentially around the second central air outlet, and a multiple second outer ring air outlets evenly arranged circumferentially around the second central air outlet, and the second outer ring air outlets are located outside the second inner ring air outlet.

[0062] That is, the second gas outlet portion B2 is constructed as a porous structure, so that the reaction gas flowing out from the plurality of second gas outlets B21 can more fully contact the corresponding wafer 20 , which can effectively improve the quality of the thin film layer deposited on the wafer 20 .

[0063] In some other embodiments, the first air outlet portion B1 includes a plurality of first air outlets B11 penetrating through the side wall of the first tube segment 1311 and disposed toward the corresponding wafer 20, and the second air outlet portion B2 includes a plurality of second air outlets B21 penetrating through the side wall of the second tube segment 1312 and disposed toward the corresponding wafer 20.

[0064] That is to say, both the first gas outlet portion B1 and the second gas outlet portion B2 are constructed as a porous structure, so that the reaction gas can be more fully in contact with the corresponding wafer 20 , which can effectively improve the quality of the thin film layer deposited on the wafer 20 .

[0065] In some embodiments, the cross section of the wafer 20 is circular, the first gas outlet portion B1 includes a first gas outlet B11 , the first gas outlet B11 is circular, and the central axis of the first gas outlet B11 is parallel to the radial direction of the wafer 20 .

[0066] It can be understood that the first gas outlet B11 is arranged centripetally toward the wafer 20, and the central axes of the first gas outlets B11 of the multiple first gas outlet portions B1 are parallel to the radial direction of the wafer 20. In this way, the reaction gases flowing out from the first gas outlets B11 of the multiple first gas outlet portions B1 can flow out along their respective axial directions, and flow in a swirling manner in the furnace chamber A, so that the reaction gases flowing out from the first gas outlets B11 of the multiple first gas outlet portions B1 can contact the wafer 20 more, so the reaction gases can contact the corresponding wafers 20 more evenly, and the film thickness uniformity of the thin film layer deposited on the wafer 20 can be effectively improved.

[0067] In some other embodiments, the cross section of the wafer 20 is circular, the second gas outlet portion B2 includes a second gas outlet B21 , the second gas outlet B21 is circular, and the central axis of the second gas outlet B21 is parallel to the radial direction of the wafer 20 .

[0068] It can be understood that the second gas outlet B21 is arranged centripetally toward the wafer 20, and the central axes of the second gas outlets B21 of the multiple second gas outlet portions B2 are parallel to the radial direction of the wafer 20. In this way, the reaction gases flowing out from the second gas outlets B21 of the multiple second gas outlet portions B2 can flow out along their respective axial directions, and flow in a swirling manner in the furnace chamber A, so that the reaction gases flowing out from the second gas outlets B21 of the multiple second gas outlet portions B2 can contact the wafer 20 more, so the reaction gases can contact the corresponding wafers 20 more evenly, and the film thickness uniformity of the thin film layer deposited on the wafer 20 can be effectively improved.

[0069] In some other embodiments, the cross-section of the wafer 20 is circular, the first air outlet B11 is circular, the central axis of the first air outlet B11 is parallel to the radial direction of the wafer 20, and the second air outlet B21 is circular, the central axis of the second air outlet B21 is parallel to the radial direction of the wafer 20.

[0070] In this way, the reaction gases flowing out from the first gas outlets B11 of the multiple first gas outlets B1 and the second gas outlets B21 of the multiple second gas outlets B2 flow out along their respective axial directions and flow in a swirling manner in the furnace chamber A, so that the reaction gases flowing out from the first gas outlets B11 of the multiple first gas outlets B1 and the second gas outlets B21 of the multiple second gas outlets B2 can contact the wafers 20 more, so that the reaction gases can contact the corresponding wafers 20 more evenly, and the uniformity of the film thickness of the thin film layer deposited on the wafer 20 can be effectively improved.

[0071] In some embodiments, the carrier 120 is used to carry a plurality of wafers 20 arranged at intervals along the axial direction of the furnace chamber A. The reaction furnace 10 includes a plurality of air inlet pipe assemblies 130 arranged at intervals along the axial direction of the furnace chamber A, and two air supply pipes 140. In each of the air inlet pipe assemblies 130, one end of one of the air inlet pipes 131 away from the first pipe section 1311 is connected to one of the air supply pipes 140, and the other end of the other air inlet pipe 131 away from the second pipe section 1312 is connected to the other air supply pipe 140.

[0072] In this way, the reaction gas can be supplied to the multiple air intake pipes 131 located on one side of the multiple air intake pipe assemblies 130 through one of the air supply pipes 140, and the reaction gas can be supplied to the multiple air intake pipes 131 located on the other side of the multiple air intake pipe assemblies 130 through another air supply pipe 140. In this way, each air supply pipe 140 supplies reaction gas to the multiple air intake pipes 131 located on the same side of the multiple air intake pipe assemblies 130.

[0073] In the present embodiment, each air inlet pipe 131 is disposed spirally around the corresponding wafer 20 from the inside to the outside, and the spiral directions of the two air inlet pipes 131 of the same air inlet pipe assembly 130 are opposite to each other.

[0074] In this way, the use of the spiral inlet pipe 131 can increase the residence time of the reaction gas in the inlet pipe 131, thereby increasing the activation time of the reaction gas, which helps the reaction gas to react more fully, thereby improving the quality of the thin film layer deposited on the wafer 20. And because the spiral winding directions of the two inlet pipes 131 of the same inlet pipe assembly 130 are opposite to each other, the quality of the thin film layer deposited on the wafer 20 can be improved while reducing the overall occupied space of the inlet pipe assembly 130.

[0075] In this embodiment, along the axial direction of the furnace chamber A, among the multiple air inlet pipes 131 in the multiple air inlet pipe assemblies 130 connected to the same air supply pipe 140 , the air inlet pipe 131 closer to the air supply pipe 140 surrounds the corresponding wafer 20 more times.

[0076] It can be understood that, among the multiple air inlet pipes 131 connected to the same air supply pipe 140, the air inlet pipe 131 that is closer to the air supply pipe 140 surrounds the corresponding portion of the wafer 20 more times, and the air inlet pipe 131 that is farther away from the air supply pipe 140 surrounds the corresponding portion of the wafer 20 less times. In other words, the number of turns of the multiple air inlet pipes 131 connected to the same air supply pipe 140 around the corresponding portion of the wafer 20 gradually decreases. In this way, the reaction gases in the multiple air inlet pipes 131 connected to the same air supply pipe 140 can reach the furnace chamber A at approximately the same time, thereby making the reaction gases at different positions in the furnace chamber A along the axial direction of the furnace chamber A more evenly distributed, so that the reaction gases can contact the corresponding wafers 20 at different positions and deposit a thin film layer on the wafers 20, thereby improving the uniformity of the film thickness of the wafers 20 at different positions along the axial direction of the furnace chamber A, and also reducing the temperature difference compensation taken to improve the uniformity of the film thickness of the wafers 20 at different positions along the axial direction of the furnace chamber A. To a certain extent, the temperature difference at different positions in the furnace chamber A along the axial direction of the furnace chamber A can be reduced, which also helps to improve the electrical stability of the wafers 20, improve the overall quality of multiple wafers 20, and reduce the influence of the number of wafers effect in the furnace body 110.

[0077] In this embodiment, the plurality of air inlet pipes 131 connected to the same air supply pipe 140 have the same pipe length.

[0078] In this way, if the furnace body 110 of the present application is a polycrystalline silicon furnace body, multiple air inlet pipes 131 with the same tube length can be used to improve the uniformity of the film thickness of the wafer 20 at different positions along the axial direction of the furnace chamber A, thereby reducing the difference in seed size of the wafer 20 at different positions in the furnace body 110, and also reducing the difference in etching rate of the wafer 20 at different positions in the subsequent etching process, which also helps to improve the electrical stability of the wafer 20, improve the overall quality of multiple wafers 20, and reduce the impact of the number of wafers effect in the furnace body 110.

[0079] Optionally, the plurality of air inlet pipe assemblies 130 include a first air inlet pipe assembly 1301, a second air inlet pipe assembly 1302, and a third air inlet pipe assembly 1303 that are spaced apart along the axial direction of the furnace chamber A, the first air inlet pipe assembly 1301 is arranged around the wafer 20 in the upper section of the furnace chamber A, the second air inlet pipe assembly 1302 is arranged around the wafer 20 in the middle section of the furnace chamber A, and the third air inlet pipe assembly 1303 is arranged around the wafer 20 in the lower section of the furnace chamber A. Among the first air inlet pipe assembly 1301, the second air inlet pipe assembly 1302, and the third air inlet pipe assembly 1303, the air inlet pipe 131 that is closer to the air supply pipe 140 has more turns around the corresponding portion of the wafer 20.

[0080] Specifically, in the first air intake pipe assembly 1301 , the second air intake pipe assembly 1302 , and the third air intake pipe assembly 1303 , the pipe lengths of the plurality of air intake pipes 131 connected to the same air supply pipe 140 are the same.

[0081] In this way, the uniformity of the film thickness of the wafer 20 at different positions along the axial direction of the furnace chamber A can be greatly improved, thereby reducing the difference in seed size of the wafer 20 at different positions in the furnace body 110 (when the furnace body 110 of the present application is a polycrystalline silicon furnace body), and also reducing the difference in etching rate of the wafer 20 at different positions in the subsequent etching process.

[0082] In some embodiments, among the plurality of air inlet pipe assemblies 130, the first air outlet portions B1 on the plurality of air inlet pipes 131 connected to the same air supply pipe 140 have the same structure, and the corresponding first air outlet portions B1 on the plurality of air inlet pipes 131 connected to the same air supply pipe 140 have the same orientation. Among the plurality of air inlet pipe assemblies 130, the second air outlet portions B2 on the plurality of air inlet pipes 131 connected to the same air supply pipe 140 have the same structure, and the corresponding second air outlet portions B2 on the plurality of air inlet pipes 131 connected to the same air supply pipe 140 have the same orientation.

[0083] It can be understood that the first air outlets B1 corresponding to the plurality of air inlet pipes 131 are arranged at intervals along the axial direction of the furnace cavity A. The second air outlets B2 corresponding to the plurality of air inlet pipes 131 are arranged at intervals along the axial direction of the furnace cavity A.

[0084] In this way, the reaction gas flowing out from the corresponding first gas outlet parts B1 on the multiple air inlet pipes 131 connected to the same air supply pipe 140 can flow into the furnace chamber A from different positions along the axial direction of the furnace chamber A at approximately the same time to react with the wafers 20 at the corresponding positions. The reaction gas flowing out from the corresponding second gas outlet parts B2 on the multiple air inlet pipes 131 connected to the same air supply pipe 140 can flow into the furnace chamber A from different positions along the axial direction of the furnace chamber A at approximately the same time to react with the wafers 20 at the corresponding positions. This can improve the uniformity of the film thickness of the wafers 20 at different positions in the furnace chamber A along the axial direction of the furnace chamber A, thereby reducing the difference in seed size of the wafers 20 at different positions in the furnace body 110 (when the furnace body 110 of the present application is a polycrystalline silicon furnace body), and can also reduce the difference in etching rate of the wafers 20 at different positions in the subsequent etching process.

[0085] In some embodiments, a flow regulator 150 is disposed on each air inlet pipe 131 .

[0086] The flow regulator 150 on the corresponding air inlet pipe 131 can be adjusted as needed to adjust the flow of the reaction gas in the corresponding air inlet pipe 131, thereby improving the uniformity of the film thickness of the wafer 20 at different positions in the furnace chamber A along the axial direction of the furnace chamber A, thereby reducing the difference in seed size of the wafer 20 at different positions in the furnace body 110 (when the furnace body 110 of the present application is a polycrystalline silicon furnace body), and also reducing the difference in etching rate of the wafer 20 at different positions in the subsequent etching process.

[0087] In some embodiments, the furnace body 110 includes an inner wall 111 and an outer wall 112 , the inner wall 111 defines a furnace cavity A, an air outlet channel C connected to the furnace cavity A is defined between the inner wall 111 and the outer wall 112 , and the air outlet channel C is arranged around the furnace cavity A.

[0088] Since the gas outlet channel C is disposed around the furnace chamber A, the remaining reaction gas and other products after the reaction in the furnace chamber A can be discharged out of the furnace body 110 more evenly, which is beneficial to improving the uniformity of the film thickness of the wafer 20 .

[0089] In some embodiments, the reaction furnace 10 includes a furnace body 110, a carrier frame 120, a plurality of air inlet pipe assemblies 130 and two air supply pipes 140 arranged at intervals along the axial direction of the furnace chamber A. In each air inlet pipe assembly 130, one end of one air inlet pipe 131 away from the first pipe section 1311 is connected to one of the air supply pipes 140, and another end of another air inlet pipe 131 away from the second pipe section 1312 is connected to another air supply pipe 140. Along the axial direction of the furnace chamber A, among the plurality of air inlet pipes 131 in the plurality of air inlet pipe assemblies 130 connected to the same air supply pipe 140, the air inlet pipe 131 closer to the air supply pipe 140 has more turns around the corresponding portion of the wafer 20.

[0090] By using the reactor 10, the temperature difference at different positions along the axial direction of the furnace chamber A can be reduced, and the film thickness uniformity of the wafers 20 at different positions along the axial direction of the furnace chamber A can be improved, thereby improving the overall quality of multiple wafers 20 and reducing the influence of the wafer number effect in the furnace body 110.

[0091] The technical features of the above-described embodiments may be arbitrarily combined. To make the description concise, not all possible combinations of the technical features in the above-described embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0092] The above-mentioned embodiments only express several implementation methods of the present application, and the descriptions thereof are relatively specific and detailed, but they cannot be understood as limiting the scope of the utility model patent. It should be pointed out that, for a person of ordinary skill in the art, several variations and improvements can be made without departing from the concept of the present application, and these all belong to the protection scope of the present application. Therefore, the protection scope of the patent of the present application shall be subject to the attached claims.

Claims

1. A reactor, characterized in that: The reactor comprises: A furnace body having a furnace cavity; A carrier, disposed in the furnace chamber and used for carrying wafers; and An air inlet pipe assembly, wherein the air inlet pipe assembly includes two air inlet pipes with one end extending into the furnace cavity, wherein one of the air inlet pipes includes a first pipe section located in the furnace cavity, and the other air inlet pipe includes a second pipe section located in the furnace cavity; The first tube segment and the second tube segment are of equal length, and the first tube segment and the second tube segment respectively surround at least a portion of the same wafer; The first pipe section is provided with a plurality of first gas outlets extending into the furnace chamber, and the second pipe section is provided with a plurality of second gas outlets extending into the furnace chamber. The plurality of first gas outlets and the plurality of second gas outlets are arranged around the corresponding wafers at intervals.

2. The reaction furnace according to claim 1, characterized in that: The cross section of the wafer is circular; The first tube segment and the second tube segment are centrally symmetrically arranged with the central axis of the wafer as a reference datum.

3. The reaction furnace according to claim 1, characterized in that: The cross section of the wafer is circular; In the air inlet pipe assembly, the multiple first air outlets on the first pipe segment and the multiple second air outlets on the second pipe segment correspond one to one, and the first air outlets and the corresponding second air outlets are symmetrically arranged with the central axis of the wafer as a reference datum.

4. The reaction furnace according to claim 1, characterized in that: The first pipe section is curved and extends in an arc shape around the corresponding wafer, and the plurality of first air outlets are arranged at equal intervals along the arc length direction of the first pipe section; and / or The second pipe section is bent and extended in an arc shape around the corresponding wafer, and a plurality of the second air outlets are arranged at equal intervals along the arc length direction of the second pipe section.

5. The reaction furnace according to claim 1, characterized in that: The first gas outlet portion includes a plurality of first gas outlets penetrating through the side wall of the first pipe section and arranged toward the corresponding wafer; and / or The second gas outlet portion includes a plurality of second gas outlets penetrating through a side wall of the second pipe section and disposed toward the corresponding wafers.

6. The reaction furnace according to claim 1, characterized in that: The cross section of the wafer is circular; The first gas outlet portion comprises a first gas outlet, the first gas outlet is circular, and a central axis of the first gas outlet is parallel to a radial direction of the wafer; and / or The second gas outlet portion includes a second gas outlet, the second gas outlet is circular, and a central axis of the second gas outlet is parallel to a radial direction of the wafer.

7. The reaction furnace according to any one of claims 1 to 6, characterized in that: The carrier is used to carry a plurality of wafers spaced apart along the axial direction of the furnace chamber; The reaction furnace comprises a plurality of the air inlet pipe assemblies arranged at intervals along the axial direction of the furnace chamber, and two air supply pipes; In each of the air intake pipe assemblies, one end of one of the air intake pipes away from the first pipe section is connected to one of the air supply pipes, and one end of the other air intake pipe away from the second pipe section is connected to the other air supply pipe.

8. The reaction furnace according to claim 7, characterized in that: Each of the air inlet pipes is spirally arranged around the corresponding wafer from the inside to the outside; the spiral directions of the two air inlet pipes of the same air inlet pipe assembly are opposite to each other.

9. The reaction furnace according to claim 8, characterized in that: Along the axial direction of the furnace chamber, among the multiple air inlet pipes in the multiple air inlet pipe assemblies connected to the same air supply pipe, the air inlet pipe closer to the air supply pipe has more turns around the corresponding wafer.

10. The reaction furnace according to claim 7, characterized in that: In the plurality of air intake pipe assemblies, the first air outlet portions on the plurality of air intake pipes connected to the same air supply pipe have the same structure, and the first air outlet portions corresponding to the plurality of air intake pipes connected to the same air supply pipe have the same orientation; In the plurality of air intake pipe assemblies, the second air outlet portions on the plurality of air intake pipes connected to the same air supply pipe have the same structure, and the corresponding second air outlet portions on the plurality of air intake pipes connected to the same air supply pipe have the same orientation.

Images