Substrate table bearing device for preparing single crystal diamond by MPCVD (Micro Plasma Chemical Vapor Deposition)

Abstract

The utility model relates to the technical field of diamond growth, and discloses a substrate table bearing device for preparing monocrystal diamond by MPCVD, which comprises a base and an upper cover, a plurality of bosses are uniformly distributed at the top of the base, a plurality of sleeves sleeved with the bosses are arranged on the upper cover, and the bosses and the sleeves are provided with adjusting mechanisms. The adjusting mechanism is arranged between the sleeve of the upper cover and the boss of the base, so that when monocrystal diamonds with different thicknesses need to be prepared, the height difference between the sleeve and the placing barrel can be adjusted by inserting the extension inserting plate into different inserting grooves, and the preparation of the monocrystal diamonds with different thicknesses is met; compared with a traditional base or an upper cover with bosses of different heights, the production cost can be greatly saved.

Description

Technical Field

[0001] The utility model relates to the technical field of diamond growth, in particular to a substrate table bearing device used for preparing single crystal diamond by MPCVD. Background Art

[0002] Diamond's excellent physical and chemical properties have attracted attention from many fields. Among the many technical methods for growing diamond, microwave plasma chemical vapor deposition (MPCVD) technology is considered to be the preferred method for growing high-quality diamond.

[0003] Microwave plasma chemical vapor deposition (MPCVD) is currently the most popular method for depositing single crystal diamond. Its specific principle is to inject the microwaves generated by the microwave source into the deposition chamber through an isolator, introduce the reaction gas, and apply the microwave energy to the gas. The gas in the deposition chamber decomposes and generates a glow discharge to form a plasma, and deposit single crystal diamond on the substrate. Due to the high density of plasma, the concentration of activated carbon groups and atomic hydrogen generated is high, so the deposition speed is fast and the diamond purity is high. At the same time, it also has some other advantages, such as stable equipment operation, easy to control deposition temperature, simple operation process and low cost.

[0004] In the prior art, a patent document with authorization announcement number CN217149393U discloses a base, which includes a separately arranged upper cover and a base, the upper cover is provided with a through hole, the base includes a column and a boss arranged on the upper end face of the column, the boss is adapted to the through hole and the depth of the through hole is greater than the height of the boss, when the upper cover is arranged on the base, the boss is inserted into the through hole, the top surface of the boss and the hole wall surface of the through hole form a growth groove for the diamond seed crystal to be placed in, the upper cover is a cylindrical upper cover, the cylindrical upper cover includes a cylinder bottom and a cylinder wall, the through hole is arranged at the cylinder bottom, the inner circumferential surface of the cylinder wall is used to cooperate with the outer circumferential surface of the cylinder so that the upper cover is guided to be sleeved on the base, the inner side surface of the cylinder bottom is used to fit with the upper end face of the cylinder, a first upper fillet is provided at the intersection of the inner side surface of the cylinder bottom and the inner circumferential surface of the cylinder wall, a first lower fillet is provided at the edge of the upper end face of the cylinder, and the first upper fillet is matched with the first lower fillet. However, the boss is a fixed structure. When single-crystal diamonds of different thicknesses need to be prepared, the base or cover of the boss of different heights needs to be replaced, which results in high production costs.

[0005] Therefore, we propose a substrate stage supporting device for preparing single crystal diamond by MPCVD in order to solve the above-mentioned problems. Utility Model Content

[0006] 1. Technical issues to be solved

[0007] In view of the deficiencies of the prior art in the above-mentioned background technology, the purpose of the present invention is to provide a substrate stage supporting device for preparing single crystal diamond by MPCVD, so as to solve the problems raised in the above-mentioned background technology.

[0008] (II) Technical solution

[0009] In order to achieve the above objectives, the present invention is implemented through the following technical solutions:

[0010] A substrate stage bearing device for preparing single crystal diamond by MPCVD, comprising a base and an upper cover, wherein a plurality of bosses are evenly distributed on the top of the base, a plurality of sleeves sleeved with the bosses are arranged on the upper cover, and an adjustment mechanism is arranged on the bosses and the sleeves;

[0011] The adjustment mechanism includes a placement tube which is sleeved on the boss and has a closed end at the top, and a compression spring arranged between the placement tube and the boss. The outer wall of the placement tube is provided with a plurality of slots in the up and down directions, an extension plug plate is inserted into one of the slots, and the bottom of the sleeve abuts against the extension plug plate.

[0012] Furthermore, two ends of the compression spring are respectively fixed to the top wall of the boss and the inner end wall of the placement tube.

[0013] Furthermore, the slot is a U-shaped slot, and the extension plug board is a U-shaped board.

[0014] Furthermore, the length and width of the inner wall of the sleeve are respectively equal to the length and width of the boss, and the length and width of the outer wall of the sleeve are respectively equal to the length and width of the inner wall of the sleeve.

[0015] Preferably, a recessed groove is provided at the top edge of the base, and a convex ring engaging with the recessed groove is provided at the bottom edge of the upper cover.

[0016] Preferably, a plurality of cavities corresponding to the bosses are formed at the bottom of the base.

[0017] (III) Beneficial effects

[0018] Compared with the prior art, the beneficial effects of the utility model are:

[0019] By setting an adjustment mechanism between the sleeve of the upper cover and the boss of the base, when single-crystal diamonds of different thicknesses need to be prepared, the height difference between the sleeve and the placement tube can be adjusted by inserting the extension plug plate into different slots to meet the preparation of single-crystal diamonds of different thicknesses. Compared with the traditional method of replacing the base or upper cover with bosses of different heights, the production cost can be greatly saved. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] Figure 1This is a schematic structural diagram of a substrate stage supporting device for preparing single crystal diamond by MPCVD according to the utility model;

[0021] Figure 2 It is a partial cross-sectional view of the adjustment mechanism of the substrate stage bearing device used for preparing single crystal diamond by MPCVD according to the utility model;

[0022] Figure 3 This is a schematic diagram of the internal structure of a substrate stage carrying device for preparing single crystal diamond by MPCVD according to the utility model;

[0023] Figure 4 This is an enlarged view of point A of the substrate stage supporting device used for preparing single crystal diamond by MPCVD according to the utility model.

[0024] In the figure: base 1, upper cover 2, boss 3, sleeve 4, adjustment mechanism 5, placement tube 51, compression spring 52, slot 53, extension plug plate 54, sink groove 6, convex ring 7, cavity 8. DETAILED DESCRIPTION

[0025] The technical solutions in the embodiments of the utility model will be described clearly and completely below in conjunction with the drawings in the embodiments of the utility model. Obviously, the described embodiments are only a part of the embodiments of the utility model, rather than all of the embodiments. It should be noted that the words "front", "back", "left", "right", "up" and "down" used in the following description refer to the directions in the drawings, and the words "bottom surface" and "top surface", "inside" and "outside" refer to the directions toward or away from the geometric center of a specific component, respectively. Based on the embodiments in the utility model, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of the utility model.

[0026] See also Figure 1-4 As shown, the utility model provides a substrate stage bearing device for preparing single crystal diamond by MPCVD, including a base 1 and a buckled upper cover 2 therewith, a plurality of bosses 3 are evenly distributed on the top of the base 1, the bosses 3 and the base 1 are an integrated structure, a plurality of sleeves 4 sleeved with the bosses 3 are arranged on the upper cover 2, the sleeves 4 sleeved with the bosses 3 are all square structures, the sleeves 4 are a middle through structure, and the lower part thereof protrudes from the bottom wall of the upper cover 2, the bosses 3 and the sleeves 4 are provided with an adjusting mechanism 5, and the base 1, the bosses 3 and the adjusting mechanism 5 are all made of metal molybdenum material.

[0027] like Figure 2 , 3 and Figure 4As shown, the adjustment mechanism 5 includes a placement tube 51, a compression spring 52 and an extension plug plate 54. The placement tube 51 is a square tube with a closed top and an open bottom. Its top is a plane and is used to place diamond seed crystals. The placement tube 51 is sleeved on the top of the boss 3 and slides in the up and down directions. The compression spring 52 is located inside the placement tube 51, and its two ends are respectively fixed to the inner end wall of the placement tube 51 and the top wall of the boss 3. A plurality of slots 53 are equidistantly opened on the outer wall of the placement tube 51 in the up and down directions. The extension plug plate 54 is inserted into one of the slots 53. When the upper cover 2 is buckled on the base 1, the lower end of the sleeve 4 abuts against the extension plug plate 54.

[0028] The top of the placement tube 51 is used to place the diamond seed crystal, and it and the sleeve 4 form a growth groove for the diamond seed crystal. Before the upper cover 2 is buckled, the extension plug plate 54 is inserted into the corresponding slot 53 according to the required diamond thickness to be prepared. When the upper cover 2 is buckled, the bottom of the sleeve 4 contacts the extension plug plate 54, and its top forms a height difference corresponding to the diamond of the required preparation thickness with the top of the placement tube 51, and then the diamond seed crystal is placed in the growth groove for subsequent growth steps.

[0029] As a preferred technical solution of the utility model: the length and width of the inner wall of the sleeve 4 are equal to the length and width of the boss 3, and the length and width of the outer wall of the sleeve 4 are equal to the length and width of the inner wall of the sleeve 4, so as to improve the sealing of the growth groove and prevent carbon ions from contacting the bottom of the seed crystal from the bottom gap and affecting the growth of the seed crystal.

[0030] As a preferred technical solution of the utility model: the slot 53 is a U-shaped slot, and the extension plug plate 54 is a U-shaped plate, which can expand the contact area between the extension plug plate 54 and the sleeve 4 and facilitate plugging and unplugging.

[0031] As a preferred technical solution of the utility model: a sink groove 6 is provided at the top edge of the base 1, and a convex ring 7 engaged with the sink groove 6 is provided at the bottom edge of the upper cover 2. The sink groove 6 cooperates with the convex ring 7 to improve the stability during buckling.

[0032] As a preferred technical solution of the utility model: a plurality of cavities 8 corresponding to the bosses 3 are provided at the bottom of the base 1. Since the base 1 is placed in a water cooling plate, when the base 1 is subsequently water-cooled to dissipate heat, the setting of the cavity 8 can expand the contact area between the cold water and the base 1, thereby achieving extremely high heat dissipation efficiency.

[0033] Although the present invention has been described in detail with reference to the aforementioned embodiments, it should be noted that, in the present invention, unless otherwise clearly specified and limited, the terms such as “set”, “install”, “connected”, “connected”, “fixed”, etc. should be understood in a broad sense. For example, it can be a fixed connection or a detachable connection; it can also be indirectly connected through an intermediate medium.

[0034] In the description of the present invention, "plurality" means two or more than two, unless otherwise clearly and specifically defined.

[0035] For ordinary technicians in this field, the specific meanings of the above terms in the present utility model can be understood according to specific circumstances; for technicians in this field, they can still modify the technical solutions recorded in the aforementioned embodiments, or make equivalent substitutions for some of the technical features therein. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present utility model should be included in the protection scope of the present utility model.

Claims

1. A substrate stage supporting device for preparing single crystal diamond by MPCVD, comprising a base (1) and an upper cover (2), wherein a plurality of bosses (3) are evenly distributed on the top of the base (1), and a plurality of sleeves (4) are provided on the upper cover (2) and are sleeved with the bosses (3), wherein: The boss (3) and the sleeve (4) are provided with an adjustment mechanism (5); The adjustment mechanism (5) comprises a placement tube (51) which is sleeved on the boss (3) and has a closed top, and a compression spring (52) arranged between the placement tube (51) and the boss (3). The outer wall of the placement tube (51) is provided with a plurality of slots (53) in the up-down direction, an extension plug plate (54) is inserted into one of the slots (53), and the bottom of the sleeve (4) is in contact with the extension plug plate (54).

2. The substrate stage supporting device for preparing single crystal diamond by MPCVD according to claim 1, characterized in that: The two ends of the compression spring (52) are respectively fixed to the top wall of the boss (3) and the inner end wall of the placement tube (51).

3. The substrate stage supporting device for preparing single crystal diamond by MPCVD according to claim 2, characterized in that: The slot (53) is a U-shaped slot, and the extension plug plate (54) is a U-shaped plate.

4. The substrate stage supporting device for preparing single crystal diamond by MPCVD according to claim 3, characterized in that: The length and width of the inner wall of the sleeve (4) are respectively equal to the length and width of the boss (3), and the length and width of the outer wall of the sleeve (4) are respectively equal to the length and width of the inner wall of the sleeve (4).

5. The substrate stage supporting device for preparing single crystal diamond by MPCVD according to claim 4, characterized in that: A sink groove (6) is provided at the top edge of the base (1), and a convex ring (7) engaged with the sink groove (6) is provided at the bottom edge of the upper cover (2).

6. The substrate stage supporting device for preparing single crystal diamond by MPCVD according to claim 5, characterized in that: The bottom of the base (1) is provided with a plurality of cavities (8) corresponding to the bosses (3).

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