Preparation device for effectively doping silicon in MPCVD diamond
By designing adjustable sample plate and carrier plate structure in the MPCVD system, the high production cost problem caused by the sample holder fixing structure in the prior art is solved, and the inclination angle is adjusted under different silicon concentrations is realized, and the diamond doping is reduced. The cost of silicon.
Patent Information
- Application Number
- CN202420664513.1
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-04-02
- Publication Date
- 2024-12-13
- Estimated Expiration
- 2034-04-02
AI Technical Summary
The sample holder of diamond silicon doping equipment in the existing MPCVD system is a fixed structure, which leads to the need to make sample holder with different inclination angles at different silicon concentrations, which increases production costs.
A MPCVD diamond-effective silicon preparation device including a base, sample plate, carrier plate, and adjustment mechanism is designed. The tilt angle of the carrier plate is changed through the adjustment mechanism to adapt to the doping needs of different silicon concentrations, and the production cost is reduced.
Through the design of the adjustment mechanism, the inclination angle of the sample plate can be adjusted at different silicon concentrations, which significantly saves the cost of producing multiple inclination angle sample holders and improves the preparation efficiency.
Smart Images
Figure CN222160470U_ABST
Abstract
Description
Technical Field
[0001] The utility model relates to the technical field of diamond growth, in particular to a preparation device for effectively doping silicon with MPCVD diamond. Background Art
[0002] Diamond's excellent physical and chemical properties have attracted attention from many fields. Among the many technical methods for growing diamond, microwave plasma chemical vapor deposition (MPCVD) technology is considered to be the preferred method for growing high-quality diamond.
[0003] Doping diamond is the key to the application of diamond as a semiconductor material and quantum device material. Doped diamond materials have broad application prospects in the manufacture of high-power semiconductor devices, as single-photon emission devices in quantum communications and quantum sensing, and as detection materials in highly sensitive temperature and magnetic field sensors.
[0004] Announcement No. CN116463609A proposes an apparatus and method for effectively realizing silicon doping in diamond. The present invention uses a specially made metal molybdenum sample holder with an inclined surface at different inclination angles of 0-90° in the MPCVD system to adjust the deposition angle of the substrate, thereby changing the distribution of plasma concentration and temperature on the substrate surface, changing the doping area of the dopant, and thus changing the doping efficiency.
[0005] However, the sample holder is a fixed structure, and when doping silicon with different concentrations, sample holders with different tilt angles need to be manufactured, resulting in high production costs.
[0006] Therefore, we propose a preparation device for effectively doping silicon in MPCVD diamond to solve the above problems. Utility Model Content
[0007] 1. Technical issues to be solved
[0008] In view of the deficiencies of the prior art in the above background technology, the purpose of the present invention is to provide a preparation device for effectively doping silicon in MPCVD diamond to solve the problems raised in the above background technology.
[0009] (II) Technical solution
[0010] In order to achieve the above objectives, the present invention is implemented through the following technical solutions:
[0011] A preparation device for effectively doping silicon with MPCVD diamond, comprising an MPCVD device and a base located in the MPCVD device, wherein a sample plate is arranged on the top of the base, wherein the sample plate comprises a connecting plate and a carrier plate relatively hinged on both sides of the connecting plate, wherein an air inlet pipe is arranged on the connecting plate, and an adjustment mechanism is arranged on the base;
[0012] The adjustment mechanism includes an adjustment rod fixed at the bottom of the connecting plate, a slide groove slidably connected to the adjustment rod is provided on the base, an inclined groove connected to the slide groove is provided on the top of the base, a first clamping groove is provided on the adjustment rod, a clamping plate is clamped in the first clamping groove, a plurality of second clamping grooves are provided on the slide groove along the up and down directions, and the clamping plate is clamped with the second clamping groove.
[0013] Furthermore, the cross section of the inclined groove is a triangular structure, and the inclined groove and the sliding groove form a Y-shaped groove.
[0014] Furthermore, a plurality of growth grooves for placing seed crystals are provided on the top of the carrier plate.
[0015] Furthermore, the air inlet pipe is a telescopic pipe.
[0016] Furthermore, the first card slot and the plurality of second card slots are all blind slots.
[0017] (III) Beneficial effects
[0018] Compared with the prior art, the beneficial effects of the utility model are:
[0019] The sample plate used to carry diamond seed crystals consists of a connecting plate and two carrier plates hinged thereto. In conjunction with an adjustment mechanism, the tilt angles of the two carrier plates can be changed through the adjustment mechanism when diamonds doped with silicon at different concentrations need to be prepared. Compared with traditional sample holders with multiple tilt angles, this can greatly save production costs. BRIEF DESCRIPTION OF THE DRAWINGS
[0020] Figure 1 It is a schematic diagram of the planar structure of the MPCVD diamond preparation device for effective silicon doping of the utility model;
[0021] Figure 2 This is a schematic diagram of the adjustment structure of the MPCVD diamond preparation device for effective silicon doping of the utility model;
[0022] Figure 3 This is a schematic diagram of the partial structure of the MPCVD diamond preparation device for effectively doping silicon according to the utility model.
[0023] In the figure: base 1, sample plate 2, connecting plate 21, carrier plate 22, air inlet pipe 3, adjustment mechanism 4, adjustment rod 41, slide groove 42, inclined groove 43, first card slot 44, card plate 45, second card slot 46, growth groove 5, MPCVD equipment 6. DETAILED DESCRIPTION
[0024] The technical solutions in the embodiments of the utility model will be described clearly and completely below in conjunction with the drawings in the embodiments of the utility model. Obviously, the described embodiments are only a part of the embodiments of the utility model, rather than all of the embodiments. It should be noted that the words "front", "back", "left", "right", "up" and "down" used in the following description refer to the directions in the drawings, and the words "bottom surface" and "top surface", "inside" and "outside" refer to the directions toward or away from the geometric center of a specific component, respectively. Based on the embodiments in the utility model, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of the utility model.
[0025] See also Figure 1-3 As shown, the utility model provides a preparation device for effectively doping silicon in MPCVD diamond, including an MPCVD device 6 and a base 1 located in the MPCVD device. The MPCVD device 6 can be used to grow diamond seed crystals and dope silicon. The detailed process can refer to the announcement number CN116463609A, which proposes a device and method for effectively realizing silicon doping in diamond. This is a prior art and will not be described in detail here. The base 1 has an angle adjustment function. Specifically, a sample plate 2 is arranged on the top of the base 1. The sample plate 2 is made of metal molybdenum. The sample plate 2 includes a connecting plate 21 and a carrier plate 22 relatively hinged on both sides of the connecting plate 21. The connecting plate 21 is provided with an air inlet pipe 3 for ventilation, and the base 1 is provided with an adjustment mechanism 4.
[0026] like Figure 2 and Figure 3 As shown, the adjustment mechanism 4 includes an adjustment rod 41 fixed to the bottom of the connecting plate 21 and a clamping plate 45 clamped on the adjustment rod 41. An inclined groove 43 with an inverted triangular cross-section is provided on the top of the base 1. A slide groove 42 slidably connected to the adjustment rod 41 is provided at the bottom of the inclined groove 43. The slide groove 42 and the inclined groove 43 form a Y-shaped groove. A first clamping groove 44 is provided on one side of the adjustment rod 41. The slide groove 42 is provided with a plurality of clamping grooves 46 along the up and down directions. The width of the clamping groove 46 is equal to the width of the first clamping groove 44, and both are half the width of the clamping plate 45. One side of the clamping plate 45 is clamped inside the first clamping groove 44, and the other side thereof is clamped in one of the clamping grooves 46.
[0027] When it is necessary to prepare silicon-doped diamonds of different concentrations, the first slot 44 on the adjusting rod 41 can be matched with the second slot 46 at different heights, and then the card plate 45 can be inserted into the first slot 44 and the second slot 46 to fix the adjusting rod 41 and then fix the sample plate 2. When the adjusting rod 41 slides in the slide groove 42, the bottoms of the two carrier plates 22 fit with the top of the base 1, and they rotate as the connecting plate 21 sinks. The end close to the connecting plate 21 tilts toward the inside of the inclined groove 43, and the inclination angle gradually increases as the connecting plate 21 sinks. The opening positions of multiple second slots 46 can correspond to the inclination angle after multiple tests, and can be marked on the side wall of the base 1 by numbers to facilitate quick adjustment by the staff. By adding the adjustment mechanism 4, the cost of casting multiple metal molybdenum plates can be reduced.
[0028] As a preferred technical solution of the utility model: a plurality of growth grooves 5 for placing seed crystals are provided on the top of the carrier plate 22. The setting of the growth grooves 5 can limit the position of the seed crystals when they are placed inside, so as to prevent the seed crystals from falling off when the carrier plate 22 is tilted.
[0029] As a preferred technical solution of the utility model: the air inlet pipe 3 is a telescopic pipe to adapt to the height position of the adjustment rod 41.
[0030] As a preferred technical solution of the present invention: the first card slot 44 and the plurality of second card slots 46 are all blind slots, so as to prevent the card plate 45 from being separated from the first card slot 44 due to being inserted too deeply.
[0031] Although the present invention has been described in detail with reference to the aforementioned embodiments, it should be noted that, in the present invention, unless otherwise clearly specified and limited, the terms such as “set”, “install”, “connected”, “connected”, “fixed”, etc. should be understood in a broad sense. For example, it can be a fixed connection or a detachable connection; it can also be indirectly connected through an intermediate medium.
[0032] In the description of the present invention, relational terms such as first and second, etc. are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. In this article, the meaning of "plurality" is two or more, unless otherwise clearly and specifically limited.
[0033] For ordinary technicians in this field, the specific meanings of the above terms in the present utility model can be understood according to specific circumstances; for technicians in this field, they can still modify the technical solutions recorded in the aforementioned embodiments, or make equivalent substitutions for some of the technical features therein. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present utility model should be included in the protection scope of the present utility model.
Claims
1. A preparation device for effectively doping silicon with MPCVD diamond, comprising an MPCVD device (6) and a base (1) located in the MPCVD device, characterized in that: A sample plate (2) is arranged on the top of the base (1), the sample plate (2) comprises a connecting plate (21) and a carrier plate (22) relatively hinged on both sides of the connecting plate (21), an air inlet pipe (3) is arranged on the connecting plate (21), and an adjustment mechanism (4) is arranged on the base (1); The adjusting mechanism (4) comprises an adjusting rod (41) fixed at the bottom of the connecting plate (21); a sliding groove (42) slidably connected to the adjusting rod (41) is provided on the base (1); an inclined groove (43) connected to the sliding groove (42) is provided on the top of the base (1); a first clamping groove (44) is provided on the adjusting rod (41); a clamping plate (45) is clamped in the first clamping groove (44); a plurality of second clamping grooves (46) are provided on the sliding groove (42) along the up and down directions; the clamping plate (45) is clamped with the second clamping grooves (46).
2. The MPCVD diamond effectively doped silicon preparation device according to claim 1, characterized in that: The cross section of the inclined groove (43) is a triangular structure, and the inclined groove (43) and the sliding groove (42) form a Y-shaped groove.
3. The MPCVD diamond effectively doped silicon preparation device according to claim 2, characterized in that: The top of the carrier plate (22) is provided with a plurality of growth grooves (5) for placing seed crystals.
4. The MPCVD diamond effectively doped silicon preparation device according to claim 1, characterized in that: The air inlet pipe (3) is a telescopic pipe.
5. The MPCVD diamond effectively doped silicon preparation device according to claim 1, characterized in that: The first card slot (44) and the plurality of second card slots (46) are all blind slots.