Flexible printing type photoelectric detector

Abstract

The utility model relates to a flexible printing type photoelectric detector. Comprising a signal enhancement unit and a photoelectric detection unit. The signal enhancement unit comprises an upper unit and a lower unit, and the upper unit sequentially comprises a PDMS upper friction layer, a copper metal film electrode and an organic film electrode from bottom to top; the lower unit sequentially comprises an Al lower friction layer, a copper metal film electrode and an organic film electrode from top to bottom, and metal electrodes are arranged on the side faces of the lower unit. The photoelectric detection unit sequentially comprises an ITO layer, a zirconium oxide insulating layer, a PEDOT: PSS organic semiconductor layer and a perovskite quantum dot layer from bottom to top; gallium-based liquid metal layers are arranged on the two sides; the metal electrode of the upper unit is connected with the gallium-based liquid metal layer; and the metal electrode of the lower unit and the ITO layer are integrally coated by the PET layer. According to the photoelectric detector provided by the utility model, the detection efficiency and the responsivity of the photoelectric detector are improved while low power consumption is realized, and the signal enhancement unit does not need energy supplement, so that the photoelectric detector has important significance in the aspect of low-power-consumption application.

Description

Technical Field

[0001] The utility model relates to a flexible printing type photoelectric detector, belonging to the technical field of photoelectric detection. Background Art

[0002] A photodetector is a functional device that converts optical signals into electrical signals. Depending on the wavelength of the detected light, it can be divided into ultraviolet, visible light, infrared, and terahertz detectors. Photodetectors play a key role in many applications, such as remote sensing, night vision, reconnaissance, medical imaging, thermal imaging, and chemical detection. As photodetection tasks become increasingly complex, photodetectors working in different bands are gradually integrated for wide-spectrum detection of the same scene. Limited by the volume and mission modules of the integrated system, conventional wide-spectrum detection tasks often require multiple detectors in different bands to work together, greatly increasing the complexity of the system. In addition, there is still little research on flexible photodetectors, which limits the scope of application of flexible photodetectors.

[0003] Although semiconductor detectors suitable for different wavelengths are available, they are limited by the volume of the integrated system and the task modules. Conventional wide-spectrum detection tasks often require multiple detectors of different wavelengths to work together, which greatly increases the complexity of the system and the detection speed. In addition, the development of optical detectors also faces the problems of breakthroughs in performance such as response speed and detection rate, and improving integration while controlling costs. Summary of the invention

[0004] In view of the deficiencies in the prior art, the utility model provides a flexible printed photoelectric detector.

[0005] The technical solution of the utility model is as follows:

[0006] A flexible printed photoelectric detector comprises a signal enhancement unit and a photoelectric detection unit;

[0007] The signal enhancement unit comprises an upper unit and a lower unit, wherein the upper unit comprises a PDMS upper friction layer, a copper metal film electrode, and an organic film electrode in order from bottom to top; the lower unit comprises an Al lower friction layer, a copper metal film electrode, and an organic film electrode in order from top to bottom; and metal electrodes are arranged on the sides of the upper unit and the lower unit;

[0008] The photoelectric detection unit includes an ITO layer, a zirconium oxide insulating layer, a PEDOT:PSS organic semiconductor layer and a perovskite quantum dot layer in order from bottom to top; gallium-based liquid metal layers are arranged on both sides of the PEDOT:PSS organic semiconductor layer and the perovskite quantum dot layer;

[0009] The metal electrode of the upper unit is connected to the gallium-based liquid metal layer of the photoelectric detection unit; the metal electrode of the lower unit is connected to the ITO layer of the photoelectric detection unit;

[0010] The bottom and top of the signal enhancement unit and the photoelectric detection unit are integrally covered by a PET layer.

[0011] Preferably, according to the present utility model, the signal enhancement unit is connected to a plurality of photoelectric detection units, and the number of the photoelectric detection units is 2 to 9.

[0012] Preferably, according to the present invention, the thickness of the friction layer on the PDMS is 0.05-0.15 mm.

[0013] Preferably, according to the present invention, the thickness of the copper metal film electrode is 0.05-0.07 mm.

[0014] Preferably, according to the present invention, the thickness of the organic thin film electrode is 0.04-0.06 mm.

[0015] Preferably, according to the present invention, the thickness of the Al lower friction layer is 0.04-0.06 mm.

[0016] Preferably, according to the present invention, the thickness of the ITO layer is 0.17-0.18 mm.

[0017] Preferably according to the present invention, the thickness of the zirconium oxide insulating layer is 200-300 nm.

[0018] Preferably, according to the present invention, the thickness of the PEDOT:PSS organic semiconductor layer is 100-300 nm.

[0019] Preferably according to the present invention, the thickness of the perovskite quantum dot layer is 300-500 nm.

[0020] The beneficial effects of the utility model are:

[0021] 1. The PDMS upper friction layer and the Al lower friction layer of the signal enhancement unit in the flexible printed photodetector provided by the utility model will generate a voltage difference through the bending of the device, and then act on the ITO layer of the photodetection unit through the copper metal film electrode, the organic film electrode and the metal electrode to provide a gate voltage to the photodetection unit, thereby achieving a signal enhancement effect, while achieving low power consumption and improving the detection efficiency and responsiveness of the photodetector.

[0022] 2. The signal enhancement unit in the flexible printed photodetector provided by the utility model can realize self-power supply by bending the device. The signal enhancement unit can generate voltage between the source and bottom gate of the photodetection unit to increase the responsiveness of the photodetector. In addition, the signal enhancement unit does not require energy replenishment, which is of great significance in low-power applications.

[0023] 3. The flexible printed photodetector provided by the utility model can adopt a parallel array design, and multiple photodetector units work simultaneously to effectively improve the detection efficiency of the photodetector. In addition, different photodetection units of the utility model use different perovskite quantum dot layers to achieve full-band detection of visible light. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] Figure 1 This is a structural diagram of the photoelectric detector described in Example 1 of the utility model.

[0025] Figure 2 This is a schematic diagram of the connection relationship of the photoelectric detector described in Example 2 of the utility model.

[0026] In the figure, 1. signal enhancement unit, 2. photoelectric detection unit, 3. PDMS upper friction layer, 4. copper metal film electrode, 5. organic thin film electrode, 6. Al lower friction layer, 7. metal electrode, 8. ITO layer, 9. zirconium oxide insulating layer, 10. PEDOT:PSS organic semiconductor layer, 11. perovskite quantum dot layer, 12. gallium-based liquid metal layer, 13. PET layer. DETAILED DESCRIPTION

[0027] The following will be combined with the drawings in the embodiments of the utility model to clearly and completely describe the technical solutions in the embodiments of the utility model. Obviously, the described embodiments are only part of the embodiments of the utility model, not all of the embodiments. Based on the embodiments in the utility model, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the utility model.

[0028] Example 1

[0029] like Figure 1 As shown, a flexible printed photodetector comprises a signal enhancement unit 1 and a photodetection unit 2;

[0030] The signal enhancement unit 1 includes an upper unit and a lower unit, wherein the upper unit includes a PDMS upper friction layer 3, a copper metal film electrode 4, and an organic film electrode 5 from bottom to top; the lower unit includes an Al lower friction layer 6, a copper metal film electrode 4, and an organic film electrode 5 from top to bottom; and metal electrodes 7 are arranged on the sides of the upper unit and the lower unit;

[0031] The photoelectric detection unit includes an ITO layer 8, a zirconium oxide insulating layer 9, a PEDOT:PSS organic semiconductor layer 10 and a perovskite quantum dot layer 11 from bottom to top; a gallium-based liquid metal layer 12 is disposed on both sides of the PEDOT:PSS organic semiconductor layer 10 and the perovskite quantum dot layer 11;

[0032] The metal electrode 7 of the upper unit is connected to the gallium-based liquid metal layer 12 of the photodetection unit 2; the metal electrode 7 of the lower unit is connected to the ITO layer 8 of the photodetection unit 2;

[0033] The bottom and top of the signal enhancement unit 1 and the photoelectric detection unit 2 are integrally covered by a PET layer 13 .

[0034] The thickness of the friction layer 3 on the PDMS is 0.1 mm; the thickness of the copper metal thin film electrode 4 is 0.065 mm; the thickness of the organic thin film electrode 5 is 0.05 mm; the thickness of the friction layer 6 under Al is 0.05 mm; the thickness of the ITO layer 8 is 0.17 mm; the thickness of the zirconium oxide insulating layer 9 is 250 nm; the thickness of the PEDOT:PSS organic semiconductor layer 10 is 200 nm; and the thickness of the perovskite quantum dot layer 11 is 400 nm.

[0035] The utility model adopts the PET layer 13 as a flexible substrate, combined with an organic thin film electrode, an Al lower friction layer, a metal electrode, an ITO layer, a zirconium oxide insulating layer, a PEDOT:PSS organic semiconductor layer, a perovskite quantum dot layer, and a gallium-based liquid metal layer, is suitable for preparation by printing, and can achieve large-area, low-cost, rapid industrial preparation.

[0036] Example 2

[0037] like Figure 2 As shown, a flexible printed photodetector has a structure as described in Example 1, except that it includes a signal enhancement unit 1 and nine photodetection units 2, wherein the nine photodetection units 2 are connected to the signal enhancement unit 1 in a 3×3 array.

[0038] In this embodiment, the materials used in the perovskite quantum dot layer 11 in the nine photoelectric detection units include CsPbCl3, CsPbCl2Br, CsPbCl 1.5 Br 1.5 , CsPbClBr2, CsPbBr3, CsPbBr2I, CsPbBr 1.5 I 1.5 , CsPbBrI2 and CsPbI3, a total of nine types, realizing full-band detection of visible light.

Claims

1. A flexible printed photoelectric detector, characterized in that: It includes a signal enhancement unit and a photoelectric detection unit; The signal enhancement unit comprises an upper unit and a lower unit, wherein the upper unit comprises a PDMS upper friction layer, a copper metal film electrode, and an organic film electrode in order from bottom to top; the lower unit comprises an Al lower friction layer, a copper metal film electrode, and an organic film electrode in order from top to bottom; and metal electrodes are arranged on the sides of the upper unit and the lower unit; The photoelectric detection unit includes an ITO layer, a zirconium oxide insulating layer, a PEDOT:PSS organic semiconductor layer and a perovskite quantum dot layer in order from bottom to top; gallium-based liquid metal layers are arranged on both sides of the PEDOT:PSS organic semiconductor layer and the perovskite quantum dot layer; The metal electrode of the upper unit is connected to the gallium-based liquid metal layer of the photoelectric detection unit; the metal electrode of the lower unit is connected to the ITO layer of the photoelectric detection unit; The bottom and top of the signal enhancement unit and the photoelectric detection unit are integrally covered by a PET layer.

2. The flexible printed photodetector according to claim 1, characterized in that: The signal enhancement unit is connected to a plurality of photoelectric detection units, and the number of the photoelectric detection units is 2 to 9.

3. The flexible printed photodetector according to claim 1, characterized in that: The thickness of the friction layer on the PDMS is 0.05-0.15 mm.

4. The flexible printed photodetector according to claim 1, characterized in that: The thickness of the copper metal film electrode is 0.05-0.07 mm.

5. The flexible printed photodetector according to claim 1, characterized in that: The thickness of the organic thin film electrode is 0.04-0.06 mm.

6. The flexible printed photodetector according to claim 1, characterized in that: The thickness of the Al lower friction layer is 0.04-0.06 mm.

7. The flexible printed photodetector according to claim 1, characterized in that: The thickness of the ITO layer is 0.17-0.18 mm.

8. The flexible printed photodetector according to claim 1, characterized in that: The thickness of the zirconium oxide insulating layer is 200-300 nm.

9. The flexible printed photoelectric detector according to claim 1, characterized in that: The thickness of the PEDOT:PSS organic semiconductor layer is 100-300 nm.

10. The flexible printed photodetector according to claim 1, characterized in that: The thickness of the perovskite quantum dot layer is 300-500 nm.

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