Driving substrate, electronic paper display screen and electronic paper display equipment

Abstract

The utility model provides a driving substrate, an electronic paper display screen and electronic paper display equipment. The driving substrate comprises a first substrate, a reflecting layer, a flat layer, a thin film transistor layer, a passivation layer and a first electrode. The first substrate is provided with a plurality of pixel opening areas; the reflecting layer is located in at least one pixel opening area and used for reflecting light; the flat layer is arranged on the side, away from the first substrate, of the reflecting layer; the thin film transistor layer comprises a plurality of thin film transistors which are arranged on the side, away from the first substrate, of the flat layer and correspond to a partial region of the flat layer, and each thin film transistor comprises a grid electrode, a source electrode and a drain electrode; the passivation layer is arranged on the side, away from the first substrate, of the thin film transistor, covers the source electrode, the drain electrode and the other partial area of the flat layer and is provided with a first through hole and a second through hole, the first through hole corresponds to the other partial area of the flat layer, and the second through hole is used for exposing the source electrode; the first electrode is arranged on the surface, away from the first substrate, of the passivation layer, avoids the first through hole and is located in the second through hole to be electrically connected with the source electrode.

Description

Technical Field

[0001] The present application relates to the display field, and in particular to a driving substrate, an electronic paper display screen and an electronic paper display device. Background Art

[0002] With the advancement of technology, electronic paper display devices have developed rapidly. When the electronic paper display screen of the electronic paper display device is working, no backlight is needed. The ambient light source is irradiated onto the electronic paper display screen, and the electronic paper display screen refracts or reflects the light into the eyes of the viewer, so that the user can clearly see the content displayed on the electronic paper display screen. However, the display effect of the electronic paper display screen in the related art still needs to be improved. Utility Model Content

[0003] In a first aspect, an embodiment of the present application provides a driving substrate, the driving substrate comprising:

[0004] The first substrate has a plurality of pixel opening areas arranged at intervals;

[0005] A reflective layer, disposed on the first substrate and located in at least one pixel opening area, the reflective layer being used to reflect light irradiated to the reflective layer;

[0006] a flat layer, disposed on a side of the reflective layer away from the first substrate;

[0007] A thin film transistor layer, comprising a plurality of thin film transistors, arranged on a side of the planar layer away from the first substrate and corresponding to a partial area of ​​the planar layer, one thin film transistor being arranged corresponding to one pixel opening area, and the thin film transistor comprising a gate, a source and a drain;

[0008] a passivation layer, disposed on a side of the thin film transistor away from the first substrate, covering the source electrode, the drain electrode and another portion of the planar layer, wherein the passivation layer has a first through hole and a second through hole, the first through hole corresponds to the other portion of the planar layer, and the second through hole is used to expose the source electrode; and

[0009] The first electrode is a pixel electrode, which is disposed on a surface of the passivation layer away from the first substrate, avoiding the first through hole, and located in the second through hole to be electrically connected to the source electrode.

[0010] In a second aspect, an embodiment of the present application provides an electronic paper display screen, wherein the electronic paper display screen comprises:

[0011] The driving substrate as described in the first aspect;

[0012] a matching substrate, the matching substrate is opposite to the driving substrate and is spaced apart to form an accommodating space, the matching substrate includes a second substrate and a second electrode disposed on the second substrate; and

[0013] The display layer can display under the control of the control electric field applied by the first electrode and the second electrode.

[0014] In a third aspect, an embodiment of the present application provides an electronic paper display device, wherein the electronic paper display device comprises the electronic paper display screen as described in the second aspect.

[0015] In summary, the driving substrate provided in the embodiment of the present application includes the reflective layer, and the reflective layer can reflect the ambient light irradiated to the reflective layer to increase the brightness value of the bright state of the electronic paper display screen applied by the driving substrate, thereby increasing the contrast of the electronic paper display screen applied by the driving substrate during display. In addition, the existence of the reflective layer will form a parasitic capacitance between the reflective layer and the first electrode to a certain extent. The passivation layer 160 of the driving substrate in the embodiment of the present application is located between the reflective layer and the first electrode, and the passivation layer has a first through hole, and the first through hole corresponds to the other part of the area of ​​the flat layer, so as to reduce the size of the parasitic capacitance between the reflective layer and the first electrode, thereby reducing or even avoiding the risk of reduced display effect caused by the introduction of the reflective layer, so as to improve the display effect of the electronic paper display screen applied by the driving substrate. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings required for use in the implementation will be briefly introduced below. Obviously, the drawings described below are some implementation methods of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0017] Figure 1 A schematic diagram of the structure of an electronic paper display device provided in one embodiment of the present application;

[0018] Figure 2 In one embodiment Figure 1 A schematic diagram of the structure of an electronic paper display screen in an electronic paper display device;

[0019] Figure 3 for Figure 2 A schematic diagram of a section of the structure along line II;

[0020] Figure 4 An implementation method Figure 2 A top view of a portion of the structure in FIG.

[0021] Figure 5for Figure 4 A schematic diagram of the cross-sectional structure along line II-II;

[0022] Figure 6 A schematic diagram of the structure of a reflective layer provided in one embodiment;

[0023] Figure 7 for Figure 5 A schematic diagram of the identification of the first through hole;

[0024] Figure 8 for Figure 5 The schematic diagram of the orthographic projection of the active layer and the light shielding protection layer in the driving substrate on the first substrate is shown;

[0025] Fig. 9 A method for preparing a drive substrate provided in one embodiment;

[0026] Fig.10 (a)~(h) Fig. 9 Schematic diagram of the structures corresponding to each step in the method for preparing the driving substrate.

[0027] Description of main components in the attached drawings

[0028] Electronic paper display device 1, electronic paper display screen 10, housing 30, circuit board 50;

[0029] Driving substrate 100, matching substrate 300, display screen 500;

[0030] A first substrate 110, a pixel opening area 110a;

[0031] Reflective layer 120, first reflective portion 121, second reflective portion 122;

[0032] Flat layer 130, first through hole 131;

[0033] Thin film transistor layer 140 , thin film transistor 141 , gate electrode 1411 , gate insulating layer 1412 , second through hole 1412 a , active layer 1413 , source electrode 1414 , drain electrode 1415 ;

[0034] Passivation layer 160, first through hole 161, second through hole 162;

[0035] A first electrode 170, a light shielding protection layer 180, a protection sublayer 181, and a light shielding sublayer 182;

[0036] Gate line 191, data line 192;

[0037] The accommodating space 10 a , the second substrate 310 , and the second electrode 320 . DETAILED DESCRIPTION

[0038] The following will be combined with the drawings in the embodiments of the present application to clearly and completely describe the technical solutions in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of this application.

[0039] The terms "first", "second", etc. in the specification and claims of this application and the above-mentioned drawings are used to distinguish different objects, rather than to describe a specific order. In addition, the terms "including" and "having" and any variations thereof are intended to cover non-exclusive inclusions. For example, a process, method, system, product or device that includes a series of steps or units is not limited to the listed steps or units, but optionally includes steps or units that are not listed, or optionally includes other steps or units inherent to these processes, methods, products or devices.

[0040] Reference to "embodiment" or "implementation" herein means that a particular feature, structure, or characteristic described in conjunction with the embodiment or implementation may be included in at least one embodiment of the present application. The appearance of the phrase in various locations in the specification does not necessarily refer to the same embodiment, nor is it an independent or alternative embodiment that is mutually exclusive with other embodiments. It is explicitly and implicitly understood by those skilled in the art that the embodiments described herein may be combined with other embodiments.

[0041] See also Figure 1 , Figure 1 The schematic diagram of the structure of the electronic paper display device provided in one embodiment of the present application. The electronic paper display device 1 includes an electronic paper display screen 10. The electronic paper display screen 10 can be used to display text, pictures, etc. In addition, in one embodiment, the electronic paper display device 1 also includes a housing 30 and a circuit board 50. The housing 30 is used to carry the electronic paper display screen 10. The housing 30 and the electronic paper display screen 10 can be surrounded by a receiving space. The circuit board 50 is arranged in the receiving space.

[0042] It can be understood that the description of the electronic paper display device 1 is only one application environment of the electronic paper display screen 10 and should not be understood as a limitation on the electronic paper display screen 10 .

[0043] Please also read Figure 2 and Figure 3 , Figure 2 In one embodiment Figure 1 A schematic diagram of the structure of an electronic paper display screen in an electronic paper display device; Figure 3 for Figure 2 Schematic diagram of the partial structure of the section along line II.

[0044] The electronic paper display screen 10 includes a driving substrate 100, a matching substrate 300 and a display screen 500. The driving substrate 100 includes a first substrate 110 and a first electrode 170 carried on the first substrate 110. In this embodiment, the first electrode 170 is disposed on a side of the first substrate 110 close to the matching substrate 300. The matching substrate 300 is opposite to the driving substrate 100 and is spaced apart to form an accommodating space 10a. The matching substrate 300 includes a second substrate 310 and a second electrode 320 disposed on the second substrate 310. In this embodiment, the second electrode 320 is disposed on a side of the second substrate 310 close to the driving substrate 100. The display screen 500 is disposed in the accommodating space 10a, and the display screen 500 can be displayed under the control of the control electric field loaded by the first electrode 170 and the second electrode 320.

[0045] In one embodiment, the display screen 500 includes an electrophoretic fluid and a plurality of charged particles. The plurality of charged particles are suspended in the electrophoretic fluid. Among the charged particles, at least two different colors of the charged particles have different polarities of surface charges. The charged particles can move under the control of the control electric field loaded by the first electrode 170 and the second electrode 320. When the charged particles are driven by the control electric field, the charged particles facing the display surface of the electronic paper display screen 10 (i.e., the surface facing the user) will reflect ambient light to display the corresponding color to achieve the corresponding display effect. When the control electric field changes, the charged particles move with the change of the control electric field, thereby causing the picture displayed by the electronic paper display screen 10 to change. When the control electric field is removed, the charged particles are suspended in the electrophoretic fluid to maintain the currently displayed picture.

[0046] It can be understood that the introduction of the electronic paper display screen 10 in this embodiment is only an introduction to an application environment of the driving substrate 100, and should not be understood as a limitation on the driving substrate 100 provided in the embodiment of the present application.

[0047] The following is an introduction to the drive substrate 100 provided in the embodiment of the present application. Figure 4 and Figure 5 , Figure 4 An implementation method Figure 2 A top view of a portion of the structure; Figure 5 for Figure 4Schematic diagram of the cross-sectional structure along line II-II in FIG. The driving substrate 100 includes a first substrate 110, a reflective layer 120, a planar layer 130, a thin film transistor layer 140, a common electrode line, a passivation layer 160 and a first electrode 170. The first substrate 110 has a plurality of pixel opening areas 110a arranged at intervals. The reflective layer 120 is arranged on the first substrate 110 and is located in at least one pixel opening area 110a. The reflective layer 120 is used to reflect the light irradiated to the reflective layer 120. The planar layer 130 is arranged on the side of the reflective layer 120 away from the first substrate 110. The thin film transistor layer 140 includes a plurality of thin film transistors 141, which are arranged on the side of the planar layer 130 away from the first substrate 110 and correspond to a partial area of ​​the planar layer 130. One thin film transistor 141 corresponds to one pixel opening area 110a. The thin film transistor 141 includes a gate 1411, a source 1414 and a drain 1415. The passivation layer 160 is disposed on the side of the thin film transistor 141 away from the first substrate 110. The passivation layer 160 covers the source electrode 1414, the drain electrode 1415 and the other part of the planar layer 130, wherein the passivation layer 160 has a first through hole 161 and a second through hole 162, wherein the first through hole 161 corresponds to the other part of the planar layer 130, and the second through hole 162 is used to expose the drain electrode 1415. The first electrode 170 is a pixel electrode, which is disposed on the surface of the passivation layer 160 away from the first substrate 110, avoiding the first through hole 161, and located in the second through hole 162 to be electrically connected to the drain electrode 1415.

[0048] The first substrate 110 may be, but is not limited to, a glass substrate or a plastic substrate, etc. In this embodiment, the first substrate 110 is taken as an example of a glass substrate.

[0049] In this implementation, see Figure 4 The driving substrate 10 includes a plurality of gate lines 191 arranged at intervals along a first direction D1, and a plurality of data lines 192 arranged at intervals along a second direction D2, wherein the plurality of data lines 192 are insulated from the plurality of gate lines 191. In one embodiment, the plurality of data lines 192 are away from the first substrate 110 compared to the plurality of gate lines 191. The pixel opening area 110a is located between two adjacent gate lines 191 and two adjacent data lines 192.

[0050] The reflective layer 120 may be a metal layer with high reflectivity. For example, the reflectivity of the reflective layer 120 is 60% to 80%.

[0051] See also Figure 6 , Figure 6A schematic diagram of the structure of a reflective layer provided for one embodiment. In one embodiment, the reflective layer 120 includes two reflective sublayers 121. For the convenience of description, the two reflective sublayers 121 are named reflective sublayer 121a and reflective sublayer 121b, respectively. Specifically, in this embodiment, the reflective layer 120 includes: a stacked Mo reflective sublayer and an Al reflective sublayer, and the Al reflective sublayer is away from the first substrate 110 compared to the Mo reflective sublayer. In another embodiment, the reflective layer 120 includes: a stacked Cu reflective sublayer 121 and a Mo reflective sublayer, and the Mo reflective sublayer is away from the first substrate 110 compared to the Cu reflective sublayer 121.

[0052] In another embodiment, the reflective layer 120 includes one reflective layer 120 , and specifically, it may be a Mo reflective layer 120 . In another embodiment, alternatively, the reflective layer 120 includes one reflective layer 120 , and specifically, it may be an Al reflective layer 120 .

[0053] In one embodiment, the passivation layer 160 is an organic flat passivation layer, and the thickness of the passivation layer 160 is 2 μm to 3 μm.

[0054] When the passivation layer 160 is an organic flat passivation layer, the passivation layer 160 is also called an organic flat layer (PFA). The passivation layer 160 is an organic flat layer, which can help reduce the parasitic capacitance between the reflective layer 120 and the first electrode 170, improve the charging efficiency, and reduce the disconnection of the first electrode 170.

[0055] In one embodiment, the thickness of the passivation layer 160 may be 2 μm, or 2.1 μm, or 2.2 μm, or 2.3 μm, or 2.4 μm, or 2.5 μm, or 2.6 μm, or 2.7 μm, or 2.8 μm, or 2.9 μm, or 3.0 μm.

[0056] The thickness of the passivation layer 160 is 2 μm to 3 μm. On the one hand, it can effectively reduce the parasitic capacitance between the reflective layer 120 and the first electrode 170, so that the electronic paper display screen 10 used by the driving substrate 100 has a better display effect. On the other hand, it can effectively improve the charging efficiency and effectively reduce the disconnection of the first electrode 170.

[0057] In summary, the driving substrate 100 provided in the embodiment of the present application includes the reflective layer 120, and the reflective layer 120 can reflect the ambient light irradiated to the reflective layer 120, so as to improve the brightness value of the bright state of the electronic paper display screen 10 applied to the driving substrate 100, thereby improving the contrast of the electronic paper display screen 10 applied to the driving substrate 100 during display. In addition, the presence of the reflective layer 120 will form a parasitic capacitance between the first electrode 170 to a certain extent. The passivation layer 160 of the driving substrate 100 in the embodiment of the present application is located between the reflective layer 120 and the first electrode 170, and the passivation layer 160 has a first through hole 161, and the first through hole 161 corresponds to the other part of the flat layer 130, so as to reduce the size of the parasitic capacitance between the reflective layer 120 and the first electrode 170, thereby reducing or even avoiding the risk of reduced display effect caused by the introduction of the reflective layer 120, so as to improve the display effect of the electronic paper display screen 10 applied to the driving substrate 100.

[0058] See also Figure 7 , Figure 7 for Figure 5 In one embodiment, the aperture of the first through hole 161 at one end close to the first substrate 110 is a first aperture d11, and the aperture of the first through hole 161 at one end away from the first substrate 110 is a second aperture d12, wherein the second aperture d12 is larger than the first aperture d11, and the flat layer 130 defines the hole wall of the first through hole 161 as an inclined surface, so as to facilitate the preparation of the first through hole 161.

[0059] In addition, the orthographic projection shape of the first through hole 161 on the first substrate 110 is any one of an ellipse, a circle, a square, a rectangle, and a triangle.

[0060] The shape of the orthographic projection of the first through hole 161 on the first substrate 110 is any one of an ellipse, a circle, a square, a rectangle, and a triangle, so that the first through hole 161 can be easily prepared.

[0061] The driving substrate 100 provided in the embodiment of the present application includes the reflective layer 120, and the reflective layer 120 can reflect the ambient light irradiated to the reflective layer 120, so as to improve the brightness value of the bright state of the electronic paper display screen 10 applied to the driving substrate 100, thereby improving the contrast of the electronic paper display screen 10 applied to the driving substrate 100 during display. In addition, the presence of the reflective layer 120 will form a parasitic capacitance between the first electrode 170 to a certain extent. The passivation layer 160 of the driving substrate 100 in the embodiment of the present application is located between the reflective layer 120 and the first electrode 170, and the passivation layer 160 has a first through hole 161, and the first through hole 161 corresponds to the other part of the flat layer 130, so as to reduce the size of the parasitic capacitance between the reflective layer 120 and the first electrode 170, thereby reducing or even avoiding the risk of reduced display effect caused by the introduction of the reflective layer 120, so as to improve the display effect of the electronic paper display screen 10 applied to the driving substrate 100.

[0062] The specific structure of the driving substrate 100 provided in the embodiment of the present application is introduced below. Figure 5 , the reflective layer 120 includes a first reflective portion 121 and a second reflective portion 122 connected to each other. In the schematic diagram of this embodiment, the first reflective portion 121 is located on the left, and the second reflective portion 122 is located on the right. The planar layer 130 has a first through hole 131 corresponding to the first reflective portion 121. The thin film transistor 141 includes a gate 1411 and a gate insulating layer 1412. The gate 1411 is disposed on a side of the planar layer 130 away from the first substrate 110, and is disposed corresponding to the second reflective portion 122. The gate insulating layer 1412 covers the gate 1411 and covers a portion of the planar layer 130 corresponding to the first reflective portion 121, and the gate insulating layer 1412 has a second through hole 1412a corresponding to the first reflective portion 121, and the second through hole 1412a is connected to the first through hole 131 and the first through hole 161.

[0063] The driving substrate 100 provided in the embodiment of the present application includes the reflective layer 120, which can reflect the ambient light irradiated to the reflective layer 120 to improve the brightness value of the electronic paper display screen 10 used by the driving substrate 100 in the bright state, thereby improving the contrast of the electronic paper display screen 10 used by the driving substrate 100 during display. In addition, the presence of the reflective layer 120 will form a parasitic capacitance between the reflective layer 120 and the first electrode 170 to a certain extent. The planar layer 130, the gate insulating layer 1412 and the passivation layer 160 of the driving substrate 100 of the embodiment of the present application are located between the reflective layer 120 and the first electrode 170. The passivation layer 160 has a first through hole 161, and the first through hole 161 corresponds to the other part of the area of ​​the planar layer 130. The planar layer 130 has a first through hole 131 corresponding to the first reflective portion 121. The gate insulating layer 1412 has a second through hole 1412a corresponding to the first reflective portion 121, and the second through hole 1412a connects the first through hole 131 and the first through hole 161. Therefore, the size of the parasitic capacitance between the reflective layer 120 and the first electrode 170 can be further reduced, thereby reducing or even avoiding the risk of reduced display effect caused by the introduction of the reflective layer 120, so as to improve the display effect of the electronic paper display screen 10 used by the driving substrate 100.

[0064] For further information, see Figure 5 , the thin film transistor 141 further includes an active layer 1413, a drain electrode 1415 and a source electrode 1414. The active layer 1413 is disposed on the surface of the gate insulating layer 1412 away from the first substrate 110, the drain electrode 1415 is connected to one end of the active layer 1413, and the source electrode 1414 is connected to the other end of the active layer 1413, and is spaced apart from the drain electrode 1415. The driving substrate 100 further includes a light shielding protection layer 180. The light shielding protection layer 180 is disposed on the side of the pixel electrode away from the first substrate 110, and the light shielding protection layer 180 is disposed corresponding to the active layer 1413.

[0065] In one embodiment, see Figure 5 , the light shielding protective layer 180 may be, but is not limited to, a protective sublayer 181 and a light shielding sublayer 182 that are stacked. In one embodiment, the protective sublayer 181 is closer to the first substrate 110 than the light shielding sublayer 182. The protective sublayer 181 may be, but is not limited to, a SiNx thin film protective sublayer 181 or a SiO2 thin film protective sublayer 181. The thickness of the protective sublayer 181 may be, but is not limited to, The light shielding sublayer 182 may be, but is not limited to, a metal layer. The light shielding sublayer 182 may be, but is not limited to, a metal light shielding sublayer prepared using a mask process. The light shielding sublayer 182 may be made of a high-hardness metal, such as an alloy, or a pure metal. The metal light shielding sublayer may also play a protective role. When the light shielding sublayer 182 is a metal layer, the thickness of the light shielding sublayer 182 may be

[0066] In one embodiment, the protective sublayer 181 has the same shape as the light shielding sublayer 182, and the protective sublayer 181 is disposed corresponding to the active layer 1413. In this embodiment, in addition to being disposed corresponding to the active layer 1413, the protective sublayer 181 also covers the first electrode 170 and the surface of the passivation layer 160 where the first electrode 170 is not disposed.

[0067] In another embodiment, the light shielding protection layer 180 may be, but is not limited to, a black matrix light shielding protection layer, and the thickness of the light shielding protection layer 180 may be 0.5 μm to 1.0 μm. For example, the material of the black matrix light shielding protection layer may be a black matrix (BM) organic material.

[0068] The thickness of the light shielding protection layer 180 may be, but is not limited to, 0.5 μm, 0.6 μm, 0.7 μm, 0.8 μm, 0.9 μm, or 1.0 μm.

[0069] The light-shielding protection layer 180 may be, but is not limited to, a black matrix light-shielding protection layer. The light-shielding protection layer 180 may be prepared using a yellow light process.

[0070] When the light-shielding protective layer 180 includes a black matrix light-shielding protective layer, when the thickness of the light-shielding protective layer 180 is too thin (for example, the thickness is less than 0.5 μm), the light-shielding effect is not good, and the protection effect is not good; when the thickness of the light-shielding protective layer 180 is too thick (for example, the thickness is greater than 1.0 μm), it is not convenient to coat and form. In this embodiment, the light-shielding protective layer 180 includes a black matrix light-shielding protective layer, and the thickness of the light-shielding protective layer 180 is 0.5 μm to 1.0 μm. On the one hand, the light-shielding protective layer 180 has a better light-shielding protection effect, and on the other hand, it is convenient to coat and form the light-shielding protective layer 180.

[0071] The light shielding protection layer 180 is arranged on the side of the pixel electrode away from the first substrate 110, so that the pixel electrode, the source electrode 1414 and the drain electrode 1415 (also called the metal layer M2) can be protected to prevent the pixel electrode, the source electrode 1414 and the drain electrode 1415 from being scratched. In addition, the light shielding protection layer 180 is arranged corresponding to the active layer 1413, which can reduce or even prevent external light from entering the active layer 1413. If the external light enters the active layer 1413, it can cause the thin film transistor 141 to leak. Therefore, the light shielding protection layer 180 is arranged corresponding to the active layer 1413, which can reduce or even prevent external light from entering the active layer 1413, and further reduce or even prevent the leakage of the thin film transistor 141 caused by the external light entering the active layer 1413, thereby improving the display effect of the electronic paper display screen 10 used by the driving substrate 100.

[0072] For further information, see Figure 8 , Figure 8 for Figure 5 Schematic diagram of the orthographic projection of the active layer and the light shielding protection layer in the driving substrate on the first substrate. The orthographic projection of the active layer 1413 on the first substrate 110 is the first projection S11, and the orthographic projection of the light shielding protection layer 180 on the first substrate 110 is the second projection S12, wherein the first projection S11 falls within the range of the second projection S12. In this embodiment, the orthographic projection of the light shielding protection layer 180 on the first substrate 110 is the second projection S12 as an example for illustration.

[0073] If external light enters the active layer 1413, it may cause leakage of the thin film transistor 141. Therefore, the light shielding protective layer 180 is arranged corresponding to the active layer 1413, the orthographic projection of the active layer 1413 on the first substrate 110 is the first projection S11, and the orthographic projection of the protective layer on the first substrate 110 is the second projection S12, wherein the first projection S11 falls within the range of the second projection S12, which can better reduce or even prevent external light from entering the active layer 1413, thereby reducing or even preventing leakage of the thin film transistor 141 caused by external light entering the active layer 1413, thereby improving the display effect of the electronic paper display screen 10 applied to the driving substrate 100.

[0074] Further, a distance d between a first point in the first projection S11 and a second point in the second projection S12 that is closest to the first point satisfies: 0≤d≤10 μm.

[0075] The distance d may be, but is not limited to, 0 μm, 1 μm, 2 μm, 3 μm, 4 μm, 5 μm, 6 μm, 7 μm, 8 μm, 9 μm, or 10 μm.

[0076] The distance d between the first point in the first projection S11 and the second point in the second projection S12 that is closest to the first point satisfies: 0≤d≤10μm. On the one hand, it can effectively reduce or even prevent external light from entering the active layer 1413, thereby reducing or even preventing leakage of the thin film transistor 141 caused by external light entering the active layer 1413, thereby improving the display effect of the electronic paper display 10 used by the driving substrate 100; on the other hand, it can reduce or even prevent the decrease in the aperture ratio of the electronic paper display 10 used by the driving substrate 100 caused by the light-shielding protective layer 180 being too large.

[0077] In summary, the driving substrate 100 provided in the embodiment of the present application includes a reflective layer 120, the reflective layer 120 is located in at least one pixel opening area 110a of the first substrate 110, and the reflective layer 120 can reflect the ambient light irradiated to the reflective layer 120 to improve the brightness value of the bright state of the electronic paper display screen 10 applied to the driving substrate 100, thereby improving the contrast of the electronic paper display screen 10 applied to the driving substrate 100. In addition, the presence of the reflective layer 120 will form a parasitic capacitance between the first electrode 170 to a certain extent, and therefore, the driving substrate 100 can be applied to a small-sized electronic paper display screen 10. In addition, since the passivation layer 160 of the driving substrate 100 of the embodiment of the present application is located between the reflective layer 120 and the first electrode 170, the passivation layer 160 has a first through hole 161, and the first through hole 161 corresponds to the other partial area of ​​the flat layer 130, so as to reduce the size of the parasitic capacitance between the reflective layer 120 and the first electrode 170, thereby reducing or even avoiding the risk of reduced display effect caused by the introduction of the reflective layer 120, so as to improve the display effect of the electronic paper display screen 10 used by the driving substrate 100.

[0078] The following describes a method for preparing a drive substrate 100 provided in an embodiment of the present application. The method for preparing the drive substrate 100 can prepare the drive substrate 100 provided in the previous embodiment. Accordingly, the drive substrate 100 provided in the previous embodiment can be prepared by the method for preparing the drive substrate 100 provided in the embodiment of the present application.

[0079] See also Fig. 9 , Fig. 9A method for preparing a drive substrate 100 is provided in one embodiment. The method for preparing the drive substrate 100 includes but is not limited to S110, S120, S130, S140, S150, S160, S170 and S180, which are described in detail as follows.

[0080] S110, forming a reflective layer 120 in at least one pixel opening area 110a of the first substrate 110, wherein the reflective layer 120 includes a first reflective portion 121 and a second reflective portion 122 connected to each other, and the first substrate 110 has a plurality of pixel opening areas 110a arranged at intervals. For the corresponding structure, please refer to Fig.10 (a) in .

[0081] The first substrate 110 may be, but is not limited to, a glass substrate or a plastic substrate. In this embodiment, the first substrate 110 is a glass substrate as an example for illustration. The reflective layer 120 may be a metal layer. The metal layer forming the reflective layer 120 may also be referred to as a first metal layer M0 (Metal 0). The reflective layer 120 includes: a stacked Mo reflective sublayer and an Al reflective sublayer, and the Al reflective sublayer is away from the first substrate 110 compared to the Mo reflective sublayer. In another embodiment, the reflective layer 120 includes: a stacked Cu reflective sublayer 121 and a Mo reflective sublayer, and the Mo reflective sublayer is away from the first substrate 110 compared to the Cu reflective sublayer 121.

[0082] In another embodiment, the reflective layer 120 includes one reflective layer 120 , and specifically, it may be a Mo reflective layer 120 . In another embodiment, alternatively, the reflective layer 120 includes one reflective layer 120 , and specifically, it may be an Al reflective layer 120 .

[0083] S120, forming a flat layer 130 disposed on a side of the reflective layer 120 away from the first substrate 110, wherein the flat layer 130 has a first through hole 131 corresponding to the first reflective portion 121. For the corresponding structure, please refer to Fig.10 (b) in .

[0084] After the first metal layer M0 is formed to form the reflective layer 120, the planar layer 130 is formed to cover the first metal layer M0. The planar layer 130 may be, but is not limited to, SiNx or OC, or an organic planar layer (PFA).

[0085] S130, providing a second metal layer M1 to prepare a gate 1411 and a common electrode line. For the corresponding structure, please refer to Fig.10 (c) in .

[0086] After the flat layer 130 is made, the gate 1411 and the common electrode line (Common) of the thin film transistor 141 are prepared. The second metal layer M1 (metal 1) can be any one of metals such as Al, Cu, Mo, Ti, or their alloys (Al, Cu, Mo, Ti), or their composite structures (Al, Cu, Mo, Ti). Accordingly, the gate 1411 and the common electrode line prepared by the second metal layer M1 can be any one of metals such as Al, Cu, Mo, Ti, or their alloys (Al, Cu, Mo, Ti), or their composite structures (Al, Cu, Mo, Ti).

[0087] S140, preparing a gate insulating layer 1412 and an active layer 1413, wherein the gate insulating layer 1412 covers the gate 1411 and covers the portion of the planar layer 130 corresponding to the first reflective portion 121, the gate insulating layer 1412 has a second through hole 1412a corresponding to the first reflective portion 121, the second through hole 1412a is connected to the first through hole 131 and the first through hole 161, and the active layer 1413 is disposed on the surface of the gate insulating layer 1412 away from the first substrate 110. For the corresponding structure, please refer to Fig.10 (d) in.

[0088] The gate insulating layer 1412 may be, but is not limited to, a SiO2 insulating layer, a SiNx insulating layer, or a composite structure thereof. The active layer 1413 may be, but is not limited to, A-Si, amorphous silicon, or metal oxide.

[0089] S150, providing a third metal layer M2 to prepare a source 1414 and a drain 1415. For the corresponding structure, please refer to Fig.10 (e) in .

[0090] The third metal layer M2 (metal 2) may be, but is not limited to, a metal such as Al, Cu, Mo, Ti, or an alloy of Al, Cu, Mo, Ti, or a composite structure of Al, Cu, Mo, Ti. The drain 1415 is connected to one end of the active layer 1413, the source 1414 is connected to the other end of the active layer 1413, and the source 1414 is spaced from the drain 1415. This structure of the source 1414 and the drain 1415 is also called a parallel structure.

[0091] S160, manufacturing a passivation layer 160, the passivation layer 160 is disposed on the side of the thin film transistor 141 away from the first substrate 110, covering the source electrode 1414, the drain electrode 1415 and the other part of the planar layer 130, wherein the passivation layer 160 has a first through hole 161 and a second through hole 162, the first through hole 161 corresponds to the other part of the planar layer 130, and the second through hole 162 is used to expose the source electrode 1414. For the corresponding structure, please refer to Fig.10 (f) in.

[0092] When the passivation layer 160 is an organic flat passivation layer, the passivation layer 160 is also called an organic flat layer (PFA). The passivation layer 160 is an organic flat layer, which can help reduce the parasitic capacitance between the reflective layer 120 and the first electrode 170, improve the charging efficiency, and reduce the disconnection of the first electrode 170.

[0093] The first through hole 161 of the passivation layer 160 may expose the first metal layer M0 where the common electrode line is located.

[0094] S170, preparing a first electrode 170, the first electrode 170 is a pixel electrode, and is disposed on the surface of the passivation layer 160 away from the first substrate 110, avoiding the first through hole 161, and located in the second through hole 162 to be electrically connected to the source electrode 1414. For the corresponding structure, please refer to Fig.10 (g) in.

[0095] The first electrode 170 is a pixel electrode, and the material of the first electrode 170 may be, but is not limited to, indium tin oxide (ITO). The first electrode 170 and the common electrode line form a storage capacitor. The structure of the first electrode 170 may be a block structure, and the shape of the first electrode 170 may be consistent with the shape of the common electrode line.

[0096] S180 , preparing a light-shielding protection layer 180 , wherein the light-shielding protection layer 180 is disposed on a side of the pixel electrode away from the first substrate 110 , and the light-shielding protection layer 180 is disposed corresponding to the active layer 1413 .

[0097] For the corresponding structure, see Fig.10 (h) in the figure. The light shielding protective layer 180 may include, but is not limited to, a protective sublayer 181 and a light shielding sublayer 182 that are stacked. In one embodiment, the protective sublayer 181 is closer to the first substrate 110 than the light shielding sublayer 182. The protective sublayer 181 may include, but is not limited to, a SiNx thin film protective sublayer 181 or a SiO2 thin film protective sublayer 181. The thickness of the protective sublayer 181 may include, but is not limited to, The light shielding sublayer 182 may be, but is not limited to, a metal layer. The light shielding sublayer 182 may be, but is not limited to, a metal light shielding sublayer prepared using a mask process. The light shielding sublayer 182 may be made of a high-hardness metal, such as an alloy, or a pure metal. The metal light shielding sublayer may also play a protective role. When the light shielding sublayer 182 is a metal layer, the thickness of the light shielding sublayer 182 may be

[0098] In another embodiment, the light shielding protection layer 180 may be, but is not limited to, a black matrix light shielding protection layer, and the thickness of the light shielding protection layer 180 may be 0.5 μm to 1.0 μm. For example, the material of the black matrix light shielding protection layer may be a black matrix (BM) organic material.

[0099] The thickness of the light shielding protection layer 180 may be, but is not limited to, 0.5 μm, 0.6 μm, 0.7 μm, 0.8 μm, 0.9 μm, or 1.0 μm.

[0100] The light-shielding protection layer 180 may be, but is not limited to, a black matrix light-shielding protection layer. The light-shielding protection layer 180 may be prepared using a yellow light process.

[0101] When the light-shielding protective layer 180 includes a black matrix light-shielding protective layer, when the thickness of the light-shielding protective layer 180 is too thin (for example, the thickness is less than 0.5 μm), the light-shielding effect is not good, and the protection effect is not good; when the thickness of the light-shielding protective layer 180 is too thick (for example, the thickness is greater than 1.0 μm), it is not convenient to coat and form. In this embodiment, the light-shielding protective layer 180 includes a black matrix light-shielding protective layer, and the thickness of the light-shielding protective layer 180 is 0.5 μm to 1.0 μm. On the one hand, the light-shielding protective layer 180 has a better light-shielding protection effect, and on the other hand, it is convenient to coat and form the light-shielding protective layer 180.

[0102] The light shielding protection layer 180 is arranged on the side of the pixel electrode away from the first substrate 110, so that the pixel electrode, the source electrode 1414 and the drain electrode 1415 (also called the metal layer M2) can be protected to prevent the pixel electrode, the source electrode 1414 and the drain electrode 1415 from being scratched. In addition, the light shielding protection layer 180 is arranged corresponding to the active layer 1413, which can reduce or even prevent external light from entering the active layer 1413. If the external light enters the active layer 1413, it can cause the thin film transistor 141 to leak. Therefore, the light shielding protection layer 180 is arranged corresponding to the active layer 1413, which can reduce or even prevent external light from entering the active layer 1413, and further reduce or even prevent the leakage of the thin film transistor 141 caused by the external light entering the active layer 1413, thereby improving the display effect of the electronic paper display screen 10 used by the driving substrate 100.

[0103] Although the embodiments of the present application have been shown and described above, it can be understood that the above embodiments are exemplary and cannot be understood as limitations on the present application. Ordinary technicians in the field can change, modify, replace and modify the above embodiments within the scope of the present application, and these improvements and modifications are also regarded as the scope of protection of the present application.

Claims

1. A driving substrate, characterized in that: The driving substrate comprises: The first substrate has a plurality of pixel opening areas arranged at intervals; A reflective layer, disposed on the first substrate and located in at least one pixel opening area, the reflective layer being used to reflect light irradiated to the reflective layer; a flat layer, disposed on a side of the reflective layer away from the first substrate; A thin film transistor layer, comprising a plurality of thin film transistors, arranged on a side of the planar layer away from the first substrate and corresponding to a partial area of ​​the planar layer, one thin film transistor being arranged corresponding to one pixel opening area, and the thin film transistor comprising a gate, a source and a drain; a passivation layer, disposed on a side of the thin film transistor away from the first substrate, covering the source electrode, the drain electrode and another portion of the planar layer, wherein the passivation layer has a first through hole and a second through hole, the first through hole corresponds to the other portion of the planar layer, and the second through hole is used to expose the source electrode; and The first electrode is a pixel electrode, which is disposed on a surface of the passivation layer away from the first substrate, avoiding the first through hole, and located in the second through hole to be electrically connected to the source electrode.

2. The driving substrate according to claim 1, wherein: The aperture of the first through hole at one end close to the first substrate is a first aperture, and the aperture of the first through hole away from the first substrate is a second aperture, wherein the second aperture is larger than the first aperture, and the flat layer defines a hole wall of the first through hole as an inclined surface.

3. The driving substrate according to claim 1, wherein: The reflective layer includes a first reflective portion and a second reflective portion connected to each other, and the flat layer has a first through hole corresponding to the first reflective portion; The gate is disposed on a side of the flat layer away from the first substrate and is disposed corresponding to the second reflective portion; and The thin film transistor includes: a gate insulating layer covering the gate and covering a portion of the planar layer corresponding to the first reflective portion, the gate insulating layer having a second through hole corresponding to the first reflective portion, the second through hole communicating with the first through hole and the first through hole.

4. The driving substrate according to claim 3, characterized in that: The thin film transistor further comprises an active layer; the active layer is arranged on a surface of the gate insulating layer away from the first substrate, the drain electrode is connected to one end of the active layer, the source electrode is connected to the other end of the active layer, and is arranged spaced apart from the drain electrode; The driving substrate further includes: The light-shielding protection layer is arranged on a side of the pixel electrode away from the first substrate, and the light-shielding protection layer is arranged corresponding to the active layer.

5. The driving substrate according to claim 4, characterized in that: The light-shielding protective layer includes a protective sublayer and a light-shielding sublayer, wherein the protective sublayer includes a SiNx thin film protective sublayer or a SiO2 thin film protective sublayer, and the thickness of the protective sublayer is in the range of The light-shielding sublayer is a metal light-shielding sublayer; Alternatively, the light-shielding protection layer includes a black matrix light-shielding protection layer, and the thickness of the light-shielding protection layer is 0.5 μm to 1.0 μm.

6. The driving substrate according to claim 4, wherein: The orthographic projection of the active layer on the first substrate is a first projection, and the orthographic projection of the light-shielding protection layer on the first substrate is a second projection, wherein the first projection falls within the range of the second projection.

7. The driving substrate according to claim 6, wherein: A distance d between a first point in the first projection and a second point in the second projection that is closest to the first point satisfies: 0≤d≤10 μm.

8. The driving substrate according to claim 1, wherein: The reflective layer includes: a Mo reflective sublayer and an Al reflective sublayer which are stacked, and the Al reflective sublayer is farther away from the first substrate than the Mo reflective sublayer; Alternatively, the reflective layer includes: a Cu reflective sublayer and a Mo reflective sublayer which are stacked, and the Mo reflective sublayer is further away from the first substrate than the Cu reflective sublayer; Alternatively, the reflective layer comprises a Mo reflective layer; Alternatively, the reflective layer includes an Al reflective layer.

9. An electronic paper display screen, characterized in that: The electronic paper display screen comprises: The driving substrate according to any one of claims 1 to 8; a matching substrate, the matching substrate is opposite to the driving substrate and is spaced apart to form an accommodating space, the matching substrate includes a second substrate and a second electrode disposed on the second substrate; and The display layer can display under the control of the control electric field applied by the first electrode and the second electrode.

10. An electronic paper display device, characterized in that: The electronic paper display device comprises the electronic paper display screen as claimed in claim 9.

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