Hard key destroying circuit of mass storage system

Abstract

The utility model belongs to the technical field of computer equipment, and particularly relates to a hard key destroying circuit of a mass storage system, which comprises a power supply unit, a power supply switching unit, a burning control unit, a channel switching unit and an energy storage capacitor unit, according to the utility model, the NAND Flash chips are burnt by adopting a current-limiting time-sharing method, the energy-storage capacitor unit in the designed circuit is used for carrying out energy-storage amplification on key-destroying input, and then the burning control unit is used for controlling the channel switching unit, so that energy is output to each key-destroying channel in a high-voltage pulse mode in a time-sharing manner, and the NAND Flash chips are burnt one by one; the purpose of destroying key data in a short time through smaller burning current can be achieved.

Description

Technical Field

[0001] The utility model belongs to the technical field of computer equipment, and in particular relates to a hard-destruct key circuit of a large-capacity storage system. Background Art

[0002] With the continuous development of information technology, the importance of information security is becoming more and more obvious. Especially in the field of aerospace, the importance of core key data is self-evident. In order to protect the security of key data, data decryption technology has emerged as the last line of defense for data protection. Faced with the increasingly large scale of data, a single storage particle can no longer meet the actual needs. How to completely and safely decrypt multiple storage devices that store key data in a large-capacity system in a short time poses a challenge.

[0003] Currently, the commonly used destruction technologies are soft key destruction and hard key destruction.

[0004] Soft key destruction mainly adopts the data overwriting method, that is, rewriting or erasing the original data through software. Its implementation method is relatively simple and can be completed by writing "0" or "1" to the data storage chip. Its disadvantages are that it is not flexible enough, and it cannot complete data destruction in a short time, and there is a risk of data recovery. In order to improve the reliability of the storage system and make up for the defects of soft key destruction, a hard key destruction scheme is proposed. The key destruction power supply is connected to the storage medium chip through the control circuit. The high voltage and high current of the key destruction power supply destroy the internal structure of the storage medium chip, and the storage chip storing the core key data is physically burned. However, with the increasing capacity of the storage system, facing the multi-target key destruction scenario, it is difficult to meet the requirements of completing effective key data destruction in a short time at a critical moment. Utility Model Content

[0005] In view of this, the utility model provides a large-capacity storage system hard key destruction circuit, which can ensure the security of confidential stored data. For multi-target key destruction scenarios, when an unexpected situation occurs, multiple storage chips can be completely destroyed in a short time, making it impossible to crack and recover key data.

[0006] In order to achieve the above technical objectives, the specific technical solutions adopted by the utility model are:

[0007] A hard-destruct key circuit for a large-capacity storage system includes a power supply unit, a power switching unit, a burn control unit, a channel switching unit, and an energy storage capacitor unit;

[0008] The power supply unit, the power switching unit, the energy storage capacitor unit, the channel switching unit and the large-capacity storage unit are electrically connected in sequence;

[0009] The inlet of the burn control unit is connected to the key-destroying power supply, and the outlet is connected to the power switching unit and the channel switching unit;

[0010] The input end of the power switching unit is connected to the energy storage capacitor unit and the burn control unit, and the output end is connected to the channel switching unit; the outlet of the channel switching unit is connected to the key destruction unit, and the key destruction unit includes multiple key destruction channels; each of the key destruction channels is respectively connected to multiple NAND Flash partitions of the large-capacity storage unit.

[0011] Furthermore, each of the NAND Flash partitions connected to the key-destroying channel is a key data partition of the large-capacity storage unit.

[0012] Furthermore, the burn control unit is a single chip microcomputer.

[0013] Furthermore, a signal receiving end of the burn control unit is connected to a host computer.

[0014] Furthermore, the output end of the power supply unit is connected to the key-destroying power supply.

[0015] Furthermore, the large-capacity storage system hard key-destroying circuit further includes an entry current-limiting switch unit; the entry current-limiting switch unit is arranged between the key-destroying power supply and the energy storage capacitor unit;

[0016] The inlet current limiting switch unit is provided with an anti-reverse switch; the current direction of the anti-reverse switch is from the key-destroying power supply to the energy storage capacitor unit.

[0017] Furthermore, the large-capacity storage system hard-destruct key circuit also includes P5V-SSD; the output end of the P5V-SSD is connected to a DC-DC converter; the DC-DC converter is connected to the large-capacity storage unit; and each NAND Flash partition connected to the DC-DC converter is a general data partition of the large-capacity storage unit.

[0018] The beneficial effects of the utility model are:

[0019] The utility model can ensure the security of confidential stored data, and for multi-target key destruction scenarios, when an unexpected situation occurs, multiple storage chips can be completely destroyed in a short period of time, making it impossible to crack and recover key data. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] In order to more clearly illustrate the technical solutions of the embodiments of the present disclosure, the drawings required for use in the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present disclosure. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0021] Figure 1 The present invention is a block diagram of a circuit structure of a hard-destruction key for a large-capacity storage system in a specific implementation manner of the present invention. DETAILED DESCRIPTION

[0022] The embodiments of the present disclosure are described in detail below with reference to the accompanying drawings.

[0023] The following describes the embodiments of the present disclosure through specific examples, and those skilled in the art can easily understand other advantages and effects of the present disclosure from the contents disclosed in this specification. Obviously, the described embodiments are only a part of the embodiments of the present disclosure, rather than all of the embodiments. The present disclosure can also be implemented or applied through other different specific embodiments, and the details in this specification can also be modified or changed in various ways based on different viewpoints and applications without departing from the spirit of the present disclosure. It should be noted that the following embodiments and features in the embodiments can be combined with each other without conflict. Based on the embodiments in the present disclosure, all other embodiments obtained by ordinary technicians in the field without making creative work are within the scope of protection of the present disclosure.

[0024] It should be noted that various aspects of the embodiments within the scope of the appended claims are described below. It should be apparent that the aspects described herein can be embodied in a wide variety of forms, and any specific structure and / or function described herein is merely illustrative. Based on the present disclosure, it should be understood by those skilled in the art that an aspect described herein can be implemented independently of any other aspect, and two or more of these aspects can be combined in various ways. For example, any number of aspects described herein can be used to implement the device and / or practice the method. In addition, other structures and / or functionalities other than one or more of the aspects described herein can be used to implement this device and / or practice this method.

[0025] It should also be noted that the illustrations provided in the following embodiments are only schematic illustrations of the basic concept of the present disclosure. The drawings only show components related to the present disclosure rather than being drawn according to the number, shape and size of components in actual implementation. In actual implementation, the type, quantity and proportion of each component may be changed arbitrarily, and the component layout may also be more complicated.

[0026] Additionally, in the following description, specific details are provided to facilitate a thorough understanding of the examples. However, it will be understood by those skilled in the art that the aspects described may be practiced without these specific details.

[0027] According to research, the traditional boost burning method uses high voltage to burn the core power pin VCC. The boost burning circuit can burn the Flash chip, but it cannot solve the problem of overload of the front-end power supply unit caused by the peak current. There is a risk that the front-end fuse will blow first during the key destruction process and the storage wafer cannot be burned. There are multiple NAND Flash chips on the large-capacity storage system. To prevent the situation where other Flash chips cannot be destroyed due to a single chip breakdown and short circuit, the core power supply of each Flash chip is separately supplied through a MOS switch so that they can be destroyed one by one.

[0028] In one embodiment of the present utility model, a large-capacity storage system hard-destruct key circuit is provided, such as Figure 1 As shown, it includes a power supply unit, a power switching unit, a burn control unit, a channel switching unit and an energy storage capacitor unit;

[0029] The power supply unit, the power switching unit, the energy storage capacitor unit, the channel switching unit and the large-capacity storage unit are electrically connected in sequence;

[0030] The inlet of the burn control unit is connected to the key-destroying power supply, and the outlet is connected to the power switching unit and the channel switching unit;

[0031] The input end of the power switching unit is connected to the energy storage capacitor unit and the burn control unit, and the output end is connected to the channel switching unit; the outlet of the channel switching unit is connected to the key destruction unit, and the key destruction unit includes multiple key destruction channels; each key destruction channel is respectively connected to multiple NAND Flash partitions of the large-capacity storage unit.

[0032] In this embodiment, each NAND Flash partition connected to the key destruction channel is a key data partition of a large-capacity storage unit. The burn control unit is a single-chip microcomputer. The signal receiving end of the burn control unit is connected to the host computer. The output end of the power supply unit is connected to the key destruction power supply.

[0033] The hard key-destroying circuit of the large-capacity storage system further includes an entry current-limiting switch unit; the entry current-limiting switch unit is arranged between the key-destroying power supply and the energy storage capacitor unit;

[0034] The inlet current limiting switch unit is provided with an anti-reverse switch; the current direction of the anti-reverse switch is from the self-destruct key power supply to the energy storage capacitor unit.

[0035] The large-capacity storage system hard-destruction key circuit also includes P5V-SSD; the output end of P5V-SSD is connected to a DC-DC converter; the DC-DC converter is connected to a large-capacity storage unit; and each NAND Flash partition connected to the DC-DC converter is a general data partition of the large-capacity storage unit.

[0036] In this embodiment, the power supply unit provides normal chip power supply and key-destroying power supply for the large-capacity storage unit;

[0037] The power switching unit is responsible for switching the system power supply and the physical self-destruction power supply in the power supply unit;

[0038] The burning control unit is implemented by a single-chip microcomputer, which controls the channel switching unit to power on and burn the NAND Flash of each channel, thus completing the control of the entire key destruction process;

[0039] The burn control unit receives the key destruction start signal from the host end, and connects the current of the key destruction power supply to the charging and storage capacitor unit for short-term charging;

[0040] The channel switching unit is connected to the large-capacity storage unit. The channel switching unit includes multiple key-destroying channels, each of which corresponds to a NAND Flash, and realizes isolation between self-destructing channels. The main control unit controls the time of switching channels, and switches to the next key-destroying channel for burning after a period of time.

[0041] The energy storage capacitor unit provides energy for the key destruction process. The burn control unit connects the key destruction power supply to the energy storage capacitor of the energy storage capacitor unit, and quickly charges and discharges the energy storage capacitor in a slow charge and fast discharge manner, generating a high-voltage and high-current burn output to the corresponding key destruction channel, breaking down the NAND Flash chip crystal to be burned.

[0042] The inlet current limiting switch unit is converted into the system voltage through an anti-reverse switch to supply the working voltage of the large-capacity storage unit. It is controlled by the burn control unit. Turning off the inlet power switch before destruction can effectively prevent the system current from flowing back to the input end, and setting overcurrent and overvoltage protection circuits to prevent damage to the upstream circuit;

[0043] The large-capacity storage unit of this embodiment includes multiple NAND Flash chips, which can be divided into a core area for storing confidential data. Multiple NAND Flash chips are used specifically for storing confidential data, and the physical burning method only burns the NAND Flash chips storing key data;

[0044] This embodiment adopts an independent channel self-destruction method, controls the channel switching unit through the burning control unit, and burns the NAND Flash chips one by one, which solves the current overload problem caused by the parallel execution of the key destruction instruction by multiple storage particles, and effectively improves the security and stability of the hard key destruction; the NAND Flash chip capacity can be selected from 8GB to 512GB; the host interface of the large-capacity storage module adopts USB, SATA bus or PCIe bus. The key destruction power supply input can be selected from 16V to 32V, 1A.

[0045] The key-destroying circuit design uses the current-limiting time-sharing method to burn the NAND Flash chip. The energy storage capacitor unit in the designed circuit amplifies the key-destroying input, and then controls the channel switching unit through the burning control unit to output energy in the form of high-voltage pulses to each key-destroying channel in time-sharing to burn the NAND Flash chips one by one. The key-destroying power supply is connected to the storage medium chip through the control circuit, and the internal structure of the storage medium chip is destroyed by the high voltage of the key-destroying power supply, and the key-destroying requirement of completing the core data in a short time at a critical moment is met.

[0046] The embodiment of the present application provides the following technical solution: a hard destruction key circuit of a large-capacity storage system, including: a power supply unit, a power switching unit, a burn control unit, a channel switching unit, an energy storage capacitor unit, a large-capacity storage unit, and an inlet current limiting switch unit.

[0047] The power supply unit, the power switching unit, the energy storage capacitor unit, the channel switching unit and the capacity storage unit are electrically connected in sequence;

[0048] The power supply unit is mainly divided into a normal chip working power supply module and a key-destroying power supply module.

[0049] The power switching unit is responsible for switching the system power supply and the physical self-destruction power supply in the power supply unit;

[0050] The working power supply module provides power input for the large-capacity storage unit when it works normally; the key-destroying power supply module provides power input for the key-destroying of the large-capacity storage module. The MOS tube combination is turned on and off by controlling the working enable signal and the key-destroying enable signal by the burn control unit, and the conduction of the key-destroying voltage is controlled.

[0051] The burning control unit is implemented by a single-chip microcomputer, which controls the channel switching unit to power on and burn the NAND Flash of each channel, thus completing the control of the entire key destruction process;

[0052] The burning control unit is implemented by a single-chip microcomputer, which is powered by the key-destroying power supply. 3.3V is the power supply voltage of the single-chip microcomputer. When a 28V key-destroying voltage is input, the single-chip microcomputer has a working voltage and can work normally, otherwise the key-destroying circuit does not work.

[0053] The energy storage capacitor unit provides energy for the key destruction process. The burn control unit connects the key destruction power supply to the energy storage capacitor of the energy storage capacitor unit, and quickly charges and discharges the energy storage capacitor in a slow charge and fast discharge manner, generating a high-voltage and high-current burn output to the corresponding key destruction channel, breaking down the NAND Flash chip crystal to be burned.

[0054] The channel switching unit mainly controls the connection between the key-destroying voltage and the Flash chip, and the burn control unit controls the key-destroying enable to complete the opening and closing of the MOS tube combination. The burn control unit controls the time of switching channels, and switches to the next Flash chip for burning after a period of time until the key-destroying signal input ends.

[0055] The channel switching unit is responsible for switching between the system power supply and the physical self-destruction power supply, and at the same time, it realizes the isolation between the self-destruction channels. At a certain moment in the self-destruction process, only one Flash chip is being burned, which ensures that each Flash chip can be burned. During the burning process of each chip, the burning power supply is intermittently connected, which ensures that the energy storage capacitor can continue to charge after discharging for a period of time to ensure the power supply, and at the same time, it can avoid the occurrence of overcurrent.

[0056] like Figure 1 The embodiment of the utility model provides a large-capacity storage system hard-destruction key circuit, including: a power supply unit, a power switching unit, a burn control unit, a channel switching unit, an energy storage capacitor unit, a large-capacity storage unit, and an inlet current limiting switch unit.

[0057] The power supply unit, the power switching unit, the energy storage capacitor unit, the channel switching unit and the capacity storage unit are electrically connected in sequence;

[0058] The power supply unit is mainly divided into a normal chip working power supply module and a key-destroying power supply module.

[0059] The power switching unit is responsible for switching the system power supply and the physical self-destruction power supply in the power supply unit;

[0060] The working power supply module provides power input for the large-capacity storage unit when it works normally; the key-destroying power supply module provides power input for the key-destroying of the large-capacity storage module. The MOS tube combination is turned on and off by controlling the working enable signal and the key-destroying enable signal by the burn control unit, and the conduction of the key-destroying voltage is controlled.

[0061] The burning control unit is implemented by a single-chip microcomputer, which controls the channel switching unit to power on and burn the NAND Flash of each channel, thus completing the control of the entire key destruction process;

[0062] The energy storage capacitor unit provides energy for the key destruction process. The burn control unit connects the key destruction power supply to the energy storage capacitor of the energy storage capacitor unit, and quickly charges and discharges the energy storage capacitor in a slow charge and fast discharge manner, generating a high-voltage and high-current burn output to the corresponding key destruction channel, breaking down the NAND Flash chip crystal to be burned.

[0063] The burning control unit is implemented by a single-chip microcomputer, which is powered by the key-destroying power supply. 3.3V is the power supply voltage of the single-chip microcomputer. When a 28V key-destroying voltage is input, the single-chip microcomputer has a working voltage and can work normally, otherwise the key-destroying circuit does not work.

[0064] The channel switching unit mainly controls the connection between the key-destroying voltage and the NAND Flash chip, and the burn control unit controls the key-destroying enable to complete the opening and closing of the MOS tube combination. The burn control unit controls the time of switching channels, and switches to the next NAND Flash chip for burning after a period of time until the key-destroying signal input ends.

[0065] The channel switching unit is responsible for switching between the system power supply and the physical self-destruction power supply, and at the same time, it realizes the isolation between the self-destruction channels. At a certain moment in the self-destruction process, only one NAND Flash chip is being burned, which ensures that each NAND Flash chip can be burned. During the burning process of each chip, the burning power supply is intermittently connected, which ensures that the energy storage capacitor can continue to charge after discharging for a period of time to ensure the power supply, and at the same time, it can avoid the occurrence of overcurrent.

[0066] In this embodiment, the key destruction start signal from the host side is input by the large-capacity system; the host-side interface of the large-capacity storage module adopts USB, SATA bus or PCIe bus; the NAND Flash chip capacity can be selected in the range of 8GB-512GB; the input current limiting switch unit is converted into system voltage through an anti-reverse switch to supply the electronic disk, which is controlled by the burning control unit. Turning off the input power switch before destruction can effectively prevent the system current from flowing back to the input end, and setting overcurrent and overvoltage protection circuits to prevent damage to upstream circuits.

[0067] like Figure 1 As shown, in this embodiment, the input voltage of the key-destroying power supply is 28V, which is divided into two outputs after passing through the key-destroying power supply module. One output voltage of 28V is converted by DC-DC into 3.3V to provide 3.3V power to the burning control unit, and the other 28V is used to power the energy storage capacitor to provide a large power supply and a large current power supply for physically burning the NAND Flash.

[0068] In order to ensure the security of confidential stored data when an unexpected situation occurs, the mass storage system is equipped with an emergency key destruction circuit to make the confidential data impossible to crack and recover. An external key destruction switch box is provided to provide a 28VDC, 1A key destruction power supply to the mass storage system, with a decryption time of 1s, which is used to burn the storage chip storing critical information in the mass storage unit. The key destruction process of the key destruction circuit is briefly described as follows:

[0069] Step 1: When the device is working normally, the burnt control unit is not powered, and all NAND Flash chips are in the normal system power supply state by default;

[0070] Step 2: When an accident occurs, the key-destroying power supply starts, and the burning control unit starts working. After the burning control unit detects the key-destroying start signal from the host, the power switching unit first disconnects the connection between the normal power supply of the system and the NAND Flash power supply pin, and then switches the key-destroying voltage 28V to the NAND Flash power supply line (temporarily not conducting), and charges the energy storage capacitor. At the same time, turning off the input power switch before destruction can effectively prevent the system current from flowing back to the input end, and setting overcurrent and overvoltage protection circuits to prevent damage to the upstream circuit.

[0071] Step 3: The burning control unit controls the channel switching unit to connect the key-destroying power supply and the NAND Flash chip to be burned one by one. The physical key-destroying power supply burns the NAND Flash chip through the 28V high voltage and the large current released by the energy storage capacitor. Since the resistance decreases at the moment of crystal breakdown, a large current will be generated, causing the temperature of the NAND Flash chip to rise sharply. The high temperature will also aggravate the burning of the chip, ensuring that the chip is completely burned.

[0072] Step 4: The power supply time of the key-destroying power supply is only 1 second. Within 1 second, the voltage conversion, control signal output and chip burning work must be completed, causing permanent damage to the NAND Flash chip storing key data to ensure that the data cannot be stolen by others.

[0073] The above is only a specific implementation of the present disclosure, but the protection scope of the present disclosure is not limited thereto. Any changes or substitutions that can be easily thought of by a person skilled in the art within the technical scope disclosed in the present disclosure should be included in the protection scope of the present disclosure. Therefore, the protection scope of the present disclosure should be based on the protection scope of the claims.

Claims

1. A mass storage system hard-destruct key circuit, characterized in that: It includes a power supply unit, a power switching unit, a burnout control unit, a channel switching unit and an energy storage capacitor unit; The power supply unit, the power switching unit, the energy storage capacitor unit, the channel switching unit and the large-capacity storage unit are electrically connected in sequence; The inlet of the burn control unit is connected to the key-destroying power supply, and the outlet is connected to the power switching unit and the channel switching unit; The input end of the power switching unit is connected to the energy storage capacitor unit and the burn control unit, and the output end is connected to the channel switching unit; the outlet of the channel switching unit is connected to the key destroying unit, and the key destroying unit includes a plurality of key destroying channels; Each of the key-destroying channels is respectively connected to a plurality of NAND Flash partitions of the large-capacity storage unit.

2. The mass storage system hard-destruct key circuit according to claim 1, characterized in that: Each of the NAND Flash partitions connected to the key-destroying channel is a key data partition of the large-capacity storage unit.

3. The mass storage system hard-destruct key circuit according to claim 2, characterized in that: The burnout control unit is a single chip microcomputer.

4. The mass storage system hard-destruct key circuit according to claim 3, characterized in that: The signal receiving end of the burnout control unit is connected to a host computer.

5. The mass storage system hard-destruct key circuit according to claim 4, characterized in that: The output end of the power supply unit is connected to the key-destroying power supply.

6. The mass storage system hard-destruct key circuit according to claim 5, characterized in that: The large-capacity storage system hard key-destroying circuit further includes an entry current-limiting switch unit; the entry current-limiting switch unit is arranged between the key-destroying power supply and the energy storage capacitor unit; The inlet current limiting switch unit is provided with an anti-reverse switch; the current direction of the anti-reverse switch is from the key-destroying power supply to the energy storage capacitor unit.

7. The mass storage system hard-destruct key circuit according to claim 6, characterized in that: The large-capacity storage system hard-destruction key circuit also includes a P5V-SSD; the output end of the P5V-SSD is connected to a DC-DC converter; The DC-DC converter is connected to the large-capacity storage unit; each NAND Flash partition connected to the DC-DC converter is a general data partition of the large-capacity storage unit.

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