Driving circuit of power semiconductor, power semiconductor and electric vehicle

Abstract

The utility model provides a driving circuit of a power semiconductor, the power semiconductor and an electric automobile. The driving circuit is characterized in that a turn-on power supply is connected with a negative electrode of a first transient diode through a first switch, and a positive electrode of the first transient diode is connected with a grid electrode of a transistor; the turn-off power supply is connected with the positive electrode of the second transient diode through the second switch. The negative electrode of the second transient diode is connected with the grid electrode of the transistor. The negative electrode of the first transient diode is also connected with the first end of the turn-on resistor, and the positive electrode of the first transient diode is also connected with the second end of the turn-on resistor; the negative electrode of the second transient diode is also connected with the first end of the turn-off resistor, and the positive electrode of the second transient diode is also connected with the second end of the turn-off resistor; the drain of the transistor is connected with the first power supply, and the source of the transistor is grounded. According to the embodiment of the invention, the energy loss is reduced, the operation complexity is reduced, and the applicability of the driving circuit is improved; the method can be widely applied to the technical field of power semiconductors.

Description

Technical Field

[0001] The utility model relates to the technical field of power semiconductors, in particular to a driving circuit of a power semiconductor, a power semiconductor and an electric vehicle. Background Art

[0002] With the rapid development of power electronics technology, power semiconductor devices, as the core component of power electronics technology, their driving circuits are constantly updated. In related technologies, power semiconductor devices are usually driven by passive driving circuits or active driving circuits. However, the passive driving circuit suppresses the voltage and current overshoots during the switching process by increasing the driving resistance or driving capacitance, but it is easy to cause problems such as increased switching time and increased switching losses. The active driving circuit suppresses the voltage and current overshoots during the switching process by adjusting the driving current / voltage in stages, but it is also easy to cause problems such as high complexity of the solution and poor applicability.

[0003] In summary, the problems existing in related technologies need to be solved urgently. Utility Model Content

[0004] The purpose of the utility model is to solve one of the technical problems existing in the related art to at least a certain extent.

[0005] To this end, an object of the embodiments of the present utility model is to provide an efficient power semiconductor drive circuit, a power semiconductor and an electric vehicle, including:

[0006] The utility model embodiment provides a driving circuit of a power semiconductor, the driving circuit is used to drive a transistor, and the driving circuit includes: a first transient diode and a second transient diode; when the power is turned on, the cathode of the first transient diode is connected to the gate of the transistor through a first switch, and the anode of the first transient diode is connected to the gate of the transistor; when the power is turned off, the anode of the second transient diode is connected to the gate of the transistor through a second switch; the cathode of the first transient diode is also connected to the first end of the on resistor, and the anode of the first transient diode is also connected to the second end of the on resistor; the cathode of the second transient diode is also connected to the first end of the off resistor, and the anode of the second transient diode is also connected to the second end of the off resistor; the drain of the transistor is connected to the first power supply, and the source of the transistor is grounded. The present application realizes the driving of the power semiconductor through the first transient diode and the second transient diode, which alleviates the high energy loss problem caused by driving through the driving resistor / voltage / current. The driving process of the embodiment of the present application does not require current or voltage adjustment, which reduces the complexity of operation and improves the applicability of the driving circuit.

[0007] In addition, the power semiconductor driving circuit according to the above embodiment of the utility model may also have the following additional technical features:

[0008] Furthermore, in an embodiment of the present utility model, the driving circuit also includes a first capacitor and a second capacitor; the first end of the first capacitor is connected to the gate of the transistor, and the second end of the first capacitor is connected to the drain of the transistor; the first end of the second capacitor is connected to the gate of the transistor, and the second end of the second capacitor is connected to the source of the transistor.

[0009] Furthermore, in an embodiment of the utility model, the first power supply is connected to the drain of the transistor through a first inductor, the first power supply is connected to the cathode of a first diode, the anode of the first diode is connected to the drain of the transistor, the cathode of the first diode is also connected to the first end of a third capacitor, and the anode of the first diode is also connected to the second end of the third capacitor.

[0010] Furthermore, in an embodiment of the present invention, the anode of the first transient diode is connected to the gate of the transistor through a second inductor and a first resistor, and the cathode of the second transient diode is connected to the gate of the transistor through the second inductor and the first resistor.

[0011] Furthermore, in an embodiment of the present invention, the source of the transistor is connected to the anode of the second diode, and the drain of the transistor is connected to the cathode of the second diode.

[0012] Further, in an embodiment of the present invention, the source of the transistor is connected to the first end of the fourth capacitor, and the drain of the transistor is connected to the second end of the fourth capacitor.

[0013] Furthermore, in an embodiment of the present invention, the driving circuit further includes a microprocessor module, a first end of the microprocessor module is connected to the first switch, and a second end of the microprocessor module is connected to the second switch.

[0014] On the other hand, an embodiment of the present application provides a power semiconductor, which is driven by the driving circuit of the power semiconductor as described above.

[0015] On the other hand, an embodiment of the present application provides an electric vehicle, comprising the above-mentioned power semiconductor.

[0016] The advantages and beneficial effects of the present invention will be partially given in the following description, partially become apparent from the following description, or be understood through the practice of the present invention:

[0017] A driving circuit for a power semiconductor disclosed in an embodiment of the present application, the driving circuit is used to drive a transistor, and the driving circuit includes: a first transient diode and a second transient diode; when the power is turned on, the cathode of the first transient diode is connected to the gate of the transistor through a first switch, and the anode of the first transient diode is connected to the gate of the transistor; when the power is turned off, the anode of the second transient diode is connected to the gate of the transistor through a second switch; the cathode of the first transient diode is also connected to the first end of the on resistor, and the anode of the first transient diode is also connected to the second end of the on resistor; the cathode of the second transient diode is also connected to the first end of the off resistor, and the anode of the second transient diode is also connected to the second end of the off resistor; the drain of the transistor is connected to the first power supply, and the source of the transistor is grounded. The present application realizes the driving of the power semiconductor through the first transient diode and the second transient diode, which alleviates the high energy loss problem caused by driving through the driving resistor / voltage / current. The driving process of the embodiment of the present application does not require current or voltage adjustment, which reduces the complexity of operation and improves the applicability of the driving circuit. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] Figure 1 A schematic diagram of the electrical principle of an embodiment of a driving circuit with variable gate driving resistance provided in the related art;

[0019] Figure 2 A schematic diagram of the electrical principle of an embodiment of a driving circuit for changing gate driving voltage provided in the related art;

[0020] Figure 3 A schematic diagram of the electrical principle of an embodiment of a driving circuit for changing gate driving current provided in the related art;

[0021] Figure 4 A schematic diagram of the working principle of an embodiment of a transient diode provided in the present application;

[0022] Figure 5 A schematic diagram of the electrical principle of an embodiment of a power semiconductor driving circuit provided in the present application;

[0023] Figure 6 A schematic diagram of an electrical signal flow of an embodiment of a transistor turn-on process provided by the present application;

[0024] Figure 7 A schematic diagram of an electrical signal flow of an embodiment of transient diode breakdown during transistor turn-on provided by the present application;

[0025] Figure 8 A schematic diagram of an electrical signal flow of an embodiment of a transient diode not conducting during a transistor turn-on process provided by the present application;

[0026] Fig. 9 A schematic diagram of an electrical signal flow of an embodiment of a transistor turn-off process provided by the present application;

[0027] Fig.10 A schematic diagram of an electrical signal flow of an embodiment of transient diode breakdown during transistor turn-off provided by the present application;

[0028] Fig.11 A schematic diagram of an electrical signal flow of an embodiment of a transient diode not conducting during a transistor turn-off process provided by the present application;

[0029] Fig.12 A schematic structural diagram of an embodiment of a power semiconductor driving circuit provided in the present application. DETAILED DESCRIPTION

[0030] The embodiments of the present invention are described in detail below, and examples of the embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals throughout represent the same or similar elements or elements having the same or similar functions. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain the present invention, and cannot be understood as limiting the present invention.

[0031] In the description of the present utility model, it is necessary to understand that the terms "length", "upper", "lower", "front", "back", "left", "right", "top", "inner", "outer", "axial", "radial", "circumferential" and the like indicate positions or positional relationships based on the positions or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present utility model and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present utility model. In addition, features defined as "first" and "second" may explicitly or implicitly include one or more of the features. In the description of the present utility model, unless otherwise specified, "multiple" means two or more.

[0032] In the description of the present invention, it should be noted that, unless otherwise clearly specified and limited, the terms "set", "install", "connect", and "connect" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be indirectly connected through an intermediate medium, or it can be the internal communication of two components. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0033] The rapid development of people's lives is inseparable from energy. With the massive consumption of non-renewable energy, new renewable energy sources such as wind power generation and solar power generation are widely used in production and life. At the moment of access to the power grid, electronic power technology has made great progress.

[0034] Power semiconductor devices are the core components of power electronics technology, and the development of new power semiconductor devices is the cornerstone of the development of power electronics technology. The development process of power semiconductor devices is as follows: power diodes and power triodes were first applied to industry and power systems; then, power semiconductor devices such as thyristors developed rapidly; then planar power MOSFETs developed; then, trench power MOSFETs and IGBTs gradually came out, and power semiconductor devices officially entered the era of electronic applications; then, superjunction MOSFETs gradually appeared, breaking the traditional "silicon limit" to meet the application needs of high power and high frequency; currently, wide bandgap semiconductors represented by SiC have come out. The advantages of SiC materials such as high thermal conductivity, wide bandgap width, high critical breakdown field strength, and high electron saturation drift velocity make SiC devices have the characteristics of high withstand voltage, high switching speed, fast heat dissipation, and low conduction loss. In high-frequency, high-voltage and high-power applications, they have more advantages than other power devices. At the same time, they can also improve the power density and stability of power electronic equipment, making the development of power electronics technology a leap forward.

[0035] This application focuses on SiC MOSFET power devices. Comparing SiC MOSFET and Si MOSFET, SiC MOSFET has smaller on-state resistance, higher voltage resistance and better high temperature characteristics; compared with Si IGBT, SiC MOSFET does not have tail current during the shutdown process, has lower loss, faster switching speed and higher voltage resistance; from the above, it can be seen that SiC MOSFET has obvious advantages over the previous generation of power devices and will gradually become the mainstream choice in power semiconductor devices.

[0036] Due to the high switching speed of SiC MOSFET, the current changes very quickly. Due to the parasitic parameters that inevitably exist in the circuit, severe voltage and current overshoots will occur in the circuit, making the voltage and current stress of SiC MOSFET very large during switching. The probability of gate-source breakdown or mis-conduction of SiC MOSFET increases, which poses a safety hazard to SiC MOSFET during operation.

[0037] Currently, the industry mainly adopts the following two control methods to suppress the voltage and current overshoot caused by SiC MOSFET.

[0038] Passive drive circuit, adjust the resistance value of the gate drive resistor or the capacitance value of the gate-source capacitor in the drive loop.

[0039] An active drive circuit, comprising:

[0040] A) Drive circuit with variable gate drive resistance.

[0041] According to the characteristics of SiC MOSFET, the resistance of the gate drive resistor is adjusted at different stages to suppress voltage and current overshoot, reduce switching losses and shorten switching time during the switching process. Figure 1 shown.

[0042] B) Drive circuit with variable gate drive voltage.

[0043] According to the characteristics of SiC MOSFET, the gate drive voltage value is adjusted at different stages to suppress voltage and current overshoot during the switching process. Figure 2 shown.

[0044] C) Drive circuit with variable gate drive current.

[0045] According to the characteristics of SiC MOSFET, the gate drive current value is adjusted at different stages to suppress voltage and current overshoot during the switching process. Figure 3 shown.

[0046] There are technical problems for the above two control methods, which are analyzed as follows:

[0047] (1) Passive drive circuit.

[0048] Voltage and current overshoot can be suppressed by adjusting the gate drive resistor or gate-source capacitance in the drive loop.

[0049] When the gate drive resistance increases, the switching speed decreases, the voltage and current overshoots during the switching process are suppressed, and the electromagnetic interference becomes weaker, but the switching time increases and the switching power loss increases.

[0050] When the gate-source capacitance increases, the drain current during the switching process becomes smaller, the rate of change decreases, and the voltage and current overshoots during the switching process are suppressed, but the power loss of the driving circuit increases at this time.

[0051] (2) Active drive circuit.

[0052] A) Drive circuit with variable gate drive resistance.

[0053] Adjust the resistance of the gate drive resistor in stages to suppress voltage and current overshoot during the switching process, while reducing switching loss and time. To achieve the above purpose, it is necessary to preset the gate drive resistor value control logic according to the switching characteristics of the device, and if the working conditions change, the control logic needs to be adjusted in time. This solution is highly complex, difficult to implement, and has poor versatility.

[0054] B) Drive circuit with variable gate drive voltage.

[0055] The gate drive voltage value is adjusted in stages to suppress voltage and current overshoot during the switching process. To achieve the above purpose, it is necessary to preset the gate drive voltage switching scheme according to the switching characteristics of the device. This scheme is highly complex and has poor versatility.

[0056] C) Drive circuit with variable gate drive current.

[0057] The gate drive current value is adjusted in stages to suppress voltage and current overshoot during the switching process. To achieve the above purpose, it is necessary to preset the gate drive current switching scheme according to the switching characteristics of the device. This scheme is highly complex and has poor versatility.

[0058] Therefore, the present application proposes a power semiconductor driving circuit, referring to Figure 4 The working principle of the TVS diode shown in the figure is Figure 5 The structural schematic diagram of the power semiconductor driving circuit shown in the figure provides a detailed introduction to the power semiconductor driving circuit proposed in the present application.

[0059] The present application provides a driving circuit for a power semiconductor, wherein the driving circuit is used to drive a transistor, and the driving circuit includes:

[0060] A first transient diode D1 and a second transient diode D2;

[0061] Turn on the power supply V CC The cathode of the first transient diode is connected through the first switch, and the anode of the first transient diode is connected to the gate of the transistor; the power supply V EE The anode of the second transient diode is connected through the second switch, and the cathode of the second transient diode is connected to the gate of the transistor;

[0062] The cathode of the first transient diode is also connected to the turn-on resistor R Gon The first end of the transient diode is connected to the anode of the first transient diode and the second end of the turn-on resistor; the cathode of the second transient diode is connected to the turn-off resistor R Goff The first end of the second transient diode is also connected to the second end of the turn-off resistor;

[0063] The drain of the transistor is connected to a first power source VDC , the source of the transistor is grounded.

[0064] Optionally, the power semiconductor driving circuit proposed in the present application further includes a first capacitor C GD and the second capacitor C GS ; The first end of the first capacitor is connected to the gate of the transistor, and the second end of the first capacitor is connected to the drain of the transistor; the first end of the second capacitor is connected to the gate of the transistor, and the second end of the second capacitor is connected to the source of the transistor.

[0065] Optionally, in the power semiconductor driving circuit proposed in the present application, the first power supply is connected to the power supply through the first inductor L load The first power source is connected to the drain of the transistor, and the first diode D FW The anode of the first diode is connected to the drain of the transistor, and the cathode of the first diode is also connected to the third capacitor C F The first end of the first diode is also connected to the second end of the third capacitor.

[0066] Optionally, in the power semiconductor driving circuit proposed in the present application, the anode of the first transient diode is connected to the gate of the transistor through a second inductor and a first resistor, and the cathode of the second transient diode is connected to the gate of the transistor through the second inductor and the first resistor.

[0067] In some possible implementations, the second inductor and the first resistor may be Figure 5 The inductance L G1 and resistor R in Of course, you can also increase the inductance L according to actual needs. G .

[0068] Optionally, in the power semiconductor driving circuit proposed in the present application, the source of the transistor is connected to the second diode C DS The anode of the transistor is connected to the cathode of the second diode.

[0069] Optionally, in the power semiconductor driving circuit proposed in the present application, the source of the transistor is connected to a fourth capacitor C DS The first end of the transistor is connected to the second end of the fourth capacitor, and the drain of the transistor is connected to the second end of the fourth capacitor.

[0070] Optionally, the power semiconductor driving circuit proposed in the present application further includes a microprocessor module, a first end of the microprocessor module is connected to the first switch, and a second end of the microprocessor module is connected to the second switch.

[0071] In some possible implementations, the first switch and the second switch may be triggered by other methods, which are not specifically limited in this application.

[0072] This solution proposes a variable resistance drive circuit based on TVS diode to solve the problem of voltage and current overshoot during switching. This solution uses a large-value gate drive resistor to suppress voltage and current overshoot, while also reducing the impact of slow switching speed caused by the large resistor.

[0073] It is understandable that the TVS diode is no different from an ordinary diode when conducting in the forward direction. The difference is that when receiving a reverse voltage, the TVS diode undergoes a reverse breakdown process. When the reverse voltage reaches VR, it reaches the critical voltage for the reverse breakdown of the TVS diode. As the reverse voltage continues to rise, when it reaches VBR, this voltage is the voltage value for the avalanche breakdown of the TVS diode. When the reverse voltage continues to rise, the current across the TVS diode also rises rapidly. When the voltage rises to VC, which is the clamping voltage of the TVS diode, the voltage across the TVS diode will no longer rise, thereby completing the protection of the circuit. Figure 4 As shown in the figure, the TVS diode is a PN junction that can work in the avalanche breakdown state, limiting the excessive voltage within a safe range at a speed of pS level, thereby protecting the subsequent circuits. Unlike ordinary diodes, TVS diodes conduct in the reverse direction.

[0074] TVS diodes are used in SiC MOSFET drive circuits, and attention is paid to the operation of TVS in different stages of the circuit. Specifically, refer to Figure 5 In the specific circuit of the embodiment shown, a diode D is installed close to the positive electrode of the DC power supply. FW It is a freewheeling diode, which protects the circuit and controls the current so that it will not produce sudden changes. Capacitor C F The freewheeling diode D FW It plays a buffering role at startup. The inductor L load The freewheeling diode D FW of load inductance.

[0075] In the driving circuit, the resistor R Gon is the gate turn-on resistance, resistance R Goff It is the gate turn-off resistor, which can suppress voltage and current overshoot and protect the circuit when opening and closing the circuit. Diode D1 is the turn-on TVS diode, and diode D2 is the turn-off TVS diode. When opening and closing the circuit, it can protect the circuit while reducing the turn-on and turn-off losses to a certain extent and improving the speed of opening and closing the circuit.

[0076] MOSFET turn-on stage:

[0077] Switch the SiC MOSFET from the off state to the on state, starting with the capacitor Ciss (i.e. Figure 5 C shown GD and C GS ) Charging, voltage V GS The gate turn-on resistance R Gon The voltage V Gon Less than the breakdown voltage V of the TVS diode BRon , the TVS diode is not conducting, and the current only flows through the gate turn-on resistor R Gon At this time, the MOSFET is in the cut-off state.

[0078] Reference Figure 6 , with the gate turn-on resistance R Gon When the voltage at both ends rises and reaches the breakdown voltage of the TVS diode, the TVS diode undergoes avalanche breakdown. At this time, the driving current I G At the same time, the gate turn-on resistor R Gon and the TVS diode is turned on. Since the resistance of the TVS diode is very small, and the gate turn-on resistance R Gon After parallel connection, the resistance of the driving circuit drops significantly, and the current I G Increase, voltage V GS The rising speed becomes faster, but because the current voltage V GS Still less than the turn-on threshold voltage V TH , so the MOSFET is still in the off state.

[0079] Reference Figure 7 , when the voltage V GS Rising to the turn-on threshold voltage V TH When the MOSFET channel opens, the drain current I D At this time, the TVS diode is still in the avalanche breakdown state, and the voltage V GS Continue to rise rapidly. Figure 8 , when the gate turn-on resistor R Gon When the voltage drops below the breakdown voltage of the TVS diode, the TVS diode loses its conduction capability, the resistance of the driving circuit increases, and the VGS rise speed slows down. The working stage of the TVS diode in the turn-on stage ends here.

[0080] MOSFET turn-off stage:

[0081] When the SiC MOSFET is switched from the on state to the off state, the capacitor C iss Discharge begins, at which point the gate-source voltage V GS The gate turn-off resistor voltage V Goff Starts to rise. At this time, the voltage VGoff Less than the breakdown voltage V of the TVS diode BRoff , the TVS diode is not conducting, and the current only flows through the gate resistor R Goff . At this time, the MOSFET is still in the on state.

[0082] Reference Fig. 9 As shown, when the gate is turned off, the voltage V Goff Continues to rise and reaches the breakdown voltage V of the TVS diode that turns off BRoff At this time, the driving current I G At the same time, the gate turns off the resistor R Goff and turn off the TVS diode. Since the resistance of the TVS diode is very small, and the gate turn-off resistance R Goff After parallel connection, the resistance of the driving circuit drops significantly, and the current I G As VGS increases, the rate of VGS decreases faster, but because VGS is still greater than the threshold voltage V miller , so the MOSFET is still in the on state. Fig.10 shown.

[0083] The voltage across the gate turn-off resistor V Goff When it drops, it is lower than the breakdown voltage V of the TVS diode that turns off BRoff , the TVS diode loses its conduction capability, and the resistance of the drive circuit increases. The voltage V GS The speed of decline slows down. The working phase of the TVS diode in the turn-off phase ends here. Fig.11 shown.

[0084] According to the above analysis, we can know that the breakdown voltage V of the TVS diode is BR The size of will directly affect the performance of MOSFET when it is turned on and off. If the breakdown voltage is too small, the breakdown time of the TVS diode will be too long, and the current overshoot during the turn-on process and the voltage overshoot during the turn-off process will be aggravated; conversely, if the breakdown voltage is too large, the breakdown time of the TVS diode will be too short, and the acceleration effect will be poor. In some embodiments, refer to Fig.12 , the structure of the driving circuit can be designed.

[0085] Based on the above description, the present application provides a circuit design solution based on a TVS diode, which can suppress voltage and current overshoot when the circuit is turned on and off, and at the same time reduce the effect of slow switching speed caused by large resistance. In view of the problems existing in the control method of the related art, the technical means proposed in the present application have made improvements.

[0086] Compared with the passive drive circuit, the solution using TVS diode shortens the opening and closing time. Since the passive drive circuit suppresses the voltage and current overshoot during the opening and closing process by increasing the gate drive resistance, the use of TVS diode avoids the use of high-resistance gate drive resistance and reduces energy loss. Compared with the active drive circuit, the solution using TVS diode does not require active adjustment of the resistance of the gate drive resistor, which greatly improves operability and facilitates promotion. Compared with the drive circuit with variable gate drive voltage and current, the solution using TVS diode does not require active adjustment of the gate drive voltage and current, which greatly simplifies the operation and facilitates promotion. It should be noted that the solution provided in this application can be used in both N-channel and P-channel designs.

[0087] On the one hand, an embodiment of the present application provides a power semiconductor, and the power semiconductor is driven by the above-mentioned power semiconductor driving circuit.

[0088] On the one hand, an embodiment of the present application provides an electric vehicle, comprising the above-mentioned power semiconductor.

[0089] It can be seen from the above description that the driving circuit provided by the present application is used to drive a transistor, and the driving circuit includes: a first transient diode and a second transient diode; the power supply is turned on by connecting the cathode of the first transient diode through a first switch, and the anode of the first transient diode is connected to the gate of the transistor; the power supply is turned off by connecting the anode of the second transient diode through a second switch, and the cathode of the second transient diode is connected to the gate of the transistor; the cathode of the first transient diode is also connected to the first end of the on-resistance, and the anode of the first transient diode is also connected to the second end of the on-resistance; the cathode of the second transient diode is also connected to the first end of the off-resistance, and the anode of the second transient diode is also connected to the second end of the off-resistance; the drain of the transistor is connected to the first power supply, and the source of the transistor is grounded. The present application realizes the driving of power semiconductors through the first transient diode and the second transient diode, which alleviates the high energy loss problem caused by driving resistance / voltage / current. The driving process of the embodiment of the present application does not require current or voltage adjustment, which reduces the complexity of operation and improves the applicability of the driving circuit.

[0090] In the description of this specification, the description with reference to the terms "one embodiment", "another embodiment" or "certain embodiments" etc. means that the specific features, structures, materials or characteristics described in conjunction with the embodiments or examples are included in at least one embodiment or example of the utility model. In this specification, the schematic representation of the above terms does not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described can be combined in any one or more embodiments or examples in a suitable manner.

[0091] Although the embodiments of the present invention have been shown and described, those skilled in the art will appreciate that various changes, modifications, substitutions and variations may be made to the embodiments without departing from the principles and spirit of the present invention, and that the scope of the present invention is defined by the claims and their equivalents.

Claims

1. A driving circuit for a power semiconductor, It is characterized in that The driving circuit is used to drive the transistor, and the driving circuit includes: A first transient diode and a second transient diode; When the power is turned on, the cathode of the first transient diode is connected through the first switch, and the anode of the first transient diode is connected to the gate of the transistor; when the power is turned off, the anode of the second transient diode is connected through the second switch, and the cathode of the second transient diode is connected to the gate of the transistor; The cathode of the first transient diode is also connected to the first end of the on-resistance, and the anode of the first transient diode is also connected to the second end of the on-resistance; the cathode of the second transient diode is also connected to the first end of the off-resistance, and the anode of the second transient diode is also connected to the second end of the off-resistance; The drain of the transistor is connected to a first power source, and the source of the transistor is grounded.

2. A power semiconductor driving circuit according to claim 1, It is characterized in that The driving circuit also includes a first capacitor and a second capacitor; the first end of the first capacitor is connected to the gate of the transistor, and the second end of the first capacitor is connected to the drain of the transistor; the first end of the second capacitor is connected to the gate of the transistor, and the second end of the second capacitor is connected to the source of the transistor.

3. A power semiconductor driving circuit according to claim 1, It is characterized in that The first power supply is connected to the drain of the transistor through a first inductor, the first power supply is connected to the cathode of a first diode, the anode of the first diode is connected to the drain of the transistor, the cathode of the first diode is also connected to the first end of a third capacitor, and the anode of the first diode is also connected to the second end of the third capacitor.

4. A power semiconductor driving circuit according to claim 1, It is characterized in that An anode of the first transient diode is connected to the gate of the transistor via a second inductor and a first resistor, and a cathode of the second transient diode is connected to the gate of the transistor via the second inductor and the first resistor.

5. The power semiconductor driving circuit according to claim 1, It is characterized in that The source of the transistor is connected to the anode of the second diode, and the drain of the transistor is connected to the cathode of the second diode.

6. The power semiconductor driving circuit according to claim 1, It is characterized in that The source of the transistor is connected to the first end of the fourth capacitor, and the drain of the transistor is connected to the second end of the fourth capacitor.

7. The power semiconductor driving circuit according to claim 1, It is characterized in that The driving circuit further includes a microprocessor module, a first end of the microprocessor module is connected to the first switch, and a second end of the microprocessor module is connected to the second switch.

8. A power semiconductor, It is characterized in that The power semiconductor is driven by the power semiconductor driving circuit according to any one of claims 1 to 7.

9. An electric car, It is characterized in that Comprising the power semiconductor as claimed in claim 8.

Images