Semiconductor process device

Abstract

The utility model provides a semiconductor process device, which is characterized in that the central area of a base is provided with a vent hole, the vent hole penetrates through the base, the vent hole is communicated with a vent pipeline, a pump ring is an annular side wall surrounding the base, the pump ring is provided with an exhaust hole, and a plane vertical to the central axis of the base is a first plane; a preset distance exists between the projection of the pump ring and the projection of the edge of the base on the first plane so as to form a purging channel, and the ventilation pipeline is communicated with the purging channel. According to the utility model, the vent hole is formed in the center of the base, so that reaction byproducts are prevented from being accumulated on the base, and the accuracy of the etching amount is improved; meanwhile, a protective cover structure is arranged in the vent hole, so that the to-be-processed wafer arranged on the base is prevented from being displaced by gas in the vent hole; besides, the positioning rod provided with the protective cover structure can be lifted, and the vent hole is closed after the reaction is stopped, so that the influence of the gas in the vent hole on the wafer to be processed is further reduced, and the operation convenience is improved.

Description

Technical Field

[0001] The utility model belongs to the field of semiconductor equipment, in particular to a semiconductor process device. Background Art

[0002] With the entry into higher process technology, EPI (Epitaxy) has entered the 28nm and below process nodes. The RPCVD (Reduced Pressure Chemical Vapor Deposition) equipment commonly used in EPI can perform boron and phosphorus doping to increase electrons and holes, thereby increasing the carrier migration rate to meet performance requirements. Before the RPCVD process, the ALC (Atomic Layer Clean) process is required. ALC is an important step in the EPI reaction process. The cleaning effect of ALC will affect the subsequent defect rate.

[0003] However, in the chamber where the ALC process is performed, the surface of the pedestal used to place the wafer is often prone to deposition of reaction byproducts, and the accumulation is more serious at the edge of the pedestal. As the reaction byproducts accumulate, the heat transfer efficiency of the pedestal becomes worse and worse, making it increasingly difficult for the heating temperature of the wafer to reach the preset temperature during the reaction process. In the reaction of the ALC process, the lower the temperature, the higher the reaction rate, resulting in a gradual increase in the amount of etching on the wafer in the ALC process, especially at the edge of the wafer. The increase in etching is more significant.

[0004] The conventional method for dealing with this problem is to heat and bake the susceptor at a temperature higher than 100°C after processing about 1,500 wafers, so that the reaction byproducts deposited on the surface of the susceptor are sublimated by heat and discharged in the form of gas. However, in actual use, after processing about 200 wafers, the amount of wafer etching increases significantly. At the same time, heating and baking can only reduce the amount of reaction byproducts deposited, and cannot completely remove the reaction byproducts deposited on the surface of the susceptor. Therefore, it is still necessary to frequently open the cavity to clean the surface of the susceptor, which greatly reduces the process efficiency.

[0005] Therefore, there is an urgent need for a new semiconductor process device that can effectively reduce the deposition of reaction byproducts on the surface of the base and reduce the frequency of opening a cavity to clean the surface of the base.

[0006] It should be noted that the above introduction to the technical background is only for the convenience of providing a clear and complete description of the technical solutions of the present application and for the convenience of understanding by those skilled in the art. It cannot be considered that the above technical solutions are well known to those skilled in the art simply because these solutions are described in the background technology part of the present application. Utility Model Content

[0007] In view of the above-mentioned shortcomings of the prior art, the purpose of the present invention is to provide a semiconductor process device for solving the deposition problem of reaction byproducts on the susceptor in the ALC process in the prior art.

[0008] In order to achieve the above purpose, the utility model provides the following technical solutions:

[0009] In a first aspect, the utility model provides a semiconductor process device, the semiconductor process device comprising: a base, a pump ring, a gas spray device and a ventilation pipeline;

[0010] A vent hole is provided in the central area of ​​the base, the vent hole passes through the base, the vent pipe is located below the base, and the vent hole is communicated with the vent pipe;

[0011] The pump ring is an annular side wall surrounding the base, and the pump ring is provided with an exhaust hole. The gas spray device is arranged above the base; the plane perpendicular to the central axis of the base is the first plane, and there is a preset distance between the projection of the inner edge of the pump ring on the first plane and the projection of the outer edge of the base on the first plane to form a purge channel, and the ventilation pipe is connected to the purge channel.

[0012] Optionally, the gas flow rate of the ventilation pipe entering the ventilation hole is greater than or equal to 1 / 4 of the gas flow rate sprayed by the gas spray device.

[0013] Optionally, the vent hole is provided with a protective cover structure, the protective cover structure includes a protective surface and a positioning rod, the positioning rod is fixedly connected to the protective surface, the projection of the protective surface on the first plane covers the projection of the vent hole on the first plane, the positioning rod is located in the vent hole, and the outer diameter of the positioning rod is less than or equal to the inner diameter of the vent hole.

[0014] Optionally, the projection of the protective surface on the first plane is circular, and the diameter of the projection of the protective surface on the first plane is greater than or equal to 3 times the aperture of the ventilation hole.

[0015] Optionally, the protective cover structure also includes an elastic member, and one end of the positioning rod away from the protective surface is connected to the elastic member; when the ventilation duct does not pass gas into the ventilation hole, the protective surface closes the ventilation hole; when the ventilation duct passes gas into the ventilation hole, the protective surface rises and stretches the elastic member.

[0016] Optionally, a step groove is provided on the upper surface of the center of the base, the projection of the step groove on the first plane covers the projection of the protective surface on the first plane, the protective surface is placed in the step groove, and the vent is located at the bottom surface of the step groove.

[0017] Optionally, the positioning rod is a liftable structure, and the lifting of the positioning rod drives the lifting of the protective surface to control the protective surface to close or open the vent; or the positioning rod is fixed at a preset position on the central axis of the base, and the position where the positioning rod is fixedly connected to the protective surface is higher than the upper surface of the base.

[0018] Optionally, a guide groove and / or a guide protrusion structure is provided on the lower surface of the protective surface.

[0019] Optionally, the base also includes a plurality of lifting holes, and the base is used to place the wafers to be processed. The lifting holes pass through the base, and the lifting holes do not overlap with the ventilation holes. A lifting structure is placed in the lifting holes, and the lifting structure can move up and down in the lifting holes along the direction of the central axis of the base to transfer the wafers to be processed on the base.

[0020] Optionally, the semiconductor process device includes a plurality of the vents, the plurality of the vents surround the center point of the base, a projection of a penetration path of each of the vents in the base on the first plane extends along a radial direction of the base, and a distance between a position of each of the vents on the upper surface of the base and the center of the base is greater than a distance between a position of each of the vents on the lower surface of the base and the center of the base.

[0021] As described above, the semiconductor process device of the utility model has the following beneficial effects:

[0022] The utility model provides a vent hole at the center of the base to allow gas to enter the ventilation pipe. The gas ejected from the vent hole to the upper surface of the base can discharge the reaction by-products to the area outside the base surface, so that the reaction by-products cannot be deposited on the base, fundamentally solving the problem of reaction by-products depositing on the base surface, greatly reducing the frequency of pausing the process for maintenance and cleaning the base, reducing maintenance costs, and improving production efficiency; at the same time, only vent holes need to be added on the base to connect with the ventilation pipe, and the modification is relatively small, so low-cost industrial application can be carried out;

[0023] The utility model sets the ratio of the gas flow rate of the vent hole to the gas flow rate of the gas spray device to ensure that the gas flow rate of the vent hole is sufficient to completely exclude the reaction by-products from the area outside the base surface, further reducing the possibility of the reaction by-products being deposited on the base surface;

[0024] The utility model provides a protective cover structure to prevent the gas blown in from the vent hole below the base from directly blowing the wafer to be processed set on the base, so as to ensure the accuracy of the wafer position and the stability of placement;

[0025] The utility model further ensures that the protective surface can achieve the position stability of the wafer to be processed placed on the base by setting the size relationship between the protective surface and the vent hole, thereby preventing the wafer to be processed from being blown by the gas ejected from the vent hole;

[0026] The utility model arranges an elastic member connected to the positioning rod, so that when gas is introduced into the vent hole, the protective surface is blown upward by the gas from the vent hole to open the vent hole and the elastic member is stretched at the same time; when gas is not introduced into the vent hole, the protective surface automatically falls back to the vent hole as the elastic member shrinks to its original length to close the vent hole, so that the flow rate of gas ejected from the vent hole can be controlled by the pressure of gas introduced into the vent hole, so as to flexibly adjust the gas flow rate required by the vent hole and maximize the efficiency of gas introduction into the vent hole;

[0027] The utility model provides a step groove on the upper surface of the base so that the protective surface can be placed in the step groove, thereby reducing the occupation of the protective surface by the space between the upper surface of the base and the wafer to be processed, and reducing the possibility of collision with the wafer to be processed.

[0028] The utility model sets the positioning rod as a liftable structure, so that it can flexibly adapt to the equipment's requirements for the height of the protective cover structure, thereby improving the flexibility of application to different application scenarios;

[0029] The utility model fixes the positioning rod at a fixed height to ensure that the protective cover structure can protect the wafer to be processed on the base from being affected by the gas blown by the vent hole while ensuring the effectiveness of the discharge of reaction by-products;

[0030] The utility model provides a guide groove and a guide protrusion structure on the lower surface of the protective surface, thereby further improving the guiding effect of the protective surface on the gas ejected from the vent hole, further improving the blocking efficiency of the reaction byproducts at the edge of the base, and further reducing the influence of the gas ejected from the vent hole on the position stability of the wafer to be processed through the guide.

[0031] The utility model sets the vent hole to penetrate the base outwardly along the radial direction of the base, so that the gas ejected from the vent hole from the base is directly ejected outward to the edge of the base, reducing the force of the gas ejected from the vent hole on the wafer to be processed placed above the base, reducing the possibility of shifting the wafer to be processed, and improving the position stability of the wafer to be processed;

[0032] The utility model prevents the reaction by-products from being deposited on the surface of the base and also prevents the reaction by-products from being accumulated in the lifting holes by arranging the vent holes on the base, thereby improving the reliability of the lifting structure. BRIEF DESCRIPTION OF THE DRAWINGS

[0033] Figure 1 It shows a top view cross-sectional structural schematic diagram of the semiconductor process device in the present invention.

[0034] Figure 2 Shown is a side cross-sectional structural schematic diagram of a semiconductor process device in the present invention.

[0035] Figure 3 The diagram shows a top view cross-sectional structure diagram of a semiconductor process device in the prior art.

[0036] Figure 4 It is a schematic diagram of a side cross-sectional view of a semiconductor process device in the prior art.

[0037] Figure 5 The image is a magnified microscopic view of the accumulation of reaction byproducts at the edge of a wafer to be processed in the prior art.

[0038] Figure 6 Shown is a top-down cross-sectional structural schematic diagram of a semiconductor process device in an optional example of the utility model.

[0039] Figure 7 Shown is a schematic diagram of a side cross-sectional view of a semiconductor process device in an optional example of the present utility model.

[0040] Description of Reference Numerals

[0041] 10. Base; 11. Ventilation hole; 12. Purge channel; 13. Lifting hole; 14. Purge gas; 15. Ventilation pipe; 20. Pump ring; 21. Exhaust hole; 30. Gas spray device; 31. Reaction gas; 32. Reaction by-products; 40. Protective cover structure; 41. Protective surface; 42. Positioning rod; 50. Sapphire ball head; 60. Wafer to be processed. DETAILED DESCRIPTION

[0042] The following is an explanation of the implementation of the present invention through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the contents disclosed in this specification. The present invention can also be implemented or applied through other different specific implementations, and the details in this specification can also be modified or changed in various ways based on different viewpoints and applications without departing from the spirit of the present invention.

[0043] For example, when describing the embodiments of the present invention in detail, for the sake of convenience, the schematic diagrams showing the device structure will not be partially enlarged according to the general scale, and the schematic diagrams are only examples, which should not limit the scope of protection of the present invention. In addition, in actual production, the three-dimensional dimensions of length, width and depth should be included.

[0044] For convenience of description, spatially relative terms such as "under", "below", "below", "below", "above", "on", etc. may be used herein to describe the relationship of one element or feature shown in the drawings to other elements or features. It will be understood that these spatially relative terms are intended to encompass other orientations of the device in use or operation in addition to the orientation depicted in the drawings.

[0045] In the context of the present application, a structure in which a first feature is described as being "above" a second feature may include embodiments in which the first and second features are formed in direct contact, and may also include embodiments in which additional features are formed between the first and second features, such that the first and second features may not be in direct contact.

[0046] It should be noted that the illustrations provided in this embodiment are only used to illustrate the basic concept of the present invention in a schematic manner, and therefore the illustrations only show components related to the present invention rather than being drawn according to the number, shape and size of components in actual implementation. In actual implementation, the type, quantity and proportion of each component may be changed at will, and the component layout may also be more complicated.

[0047] The utility model provides a semiconductor process device, such as Figure 1-Figure 2 The semiconductor process device is shown as a top cross-sectional view and a side cross-sectional view, and the semiconductor process device includes: a base 10, a pump ring 20, a gas spray device 30 and a ventilation pipe 15;

[0048] The base 10 is provided with a vent hole 11 in the central area thereof, the vent hole 11 passes through the base 10, the vent pipe 15 is located below the base 10, and the vent hole 11 is communicated with the vent pipe 15;

[0049] The pump ring 20 is an annular side wall surrounding the base 10, and the pump ring 20 is provided with an exhaust hole 21. The gas spray device 30 is arranged above the base 10; the plane perpendicular to the central axis of the base 10 is a first plane, and there is a preset distance between the projection of the inner edge of the pump ring 20 on the first plane and the projection of the outer edge of the base 10 on the first plane to form a purge channel 12, and the ventilation pipe 15 is connected to the purge channel 12.

[0050] In the prior art, such as Figure 3-Figure 4The figure shows a top cross-sectional view and a side cross-sectional view of a semiconductor process device of a process chamber for performing ALC in the prior art. The ventilation pipe 15 introduces a purge gas 14 into the purge channel 12, and the gas spray device 30 sprays a reaction gas 31. In the prior art, the reaction byproducts 32 generated after the reaction of the reaction gas 31 impact the edge of the base 10 and diffuse into the inside of the surface of the base 10, so that the reaction byproducts 32 are easily deposited on the surface of the base 10 where the wafer 60 to be processed is placed, and the accumulation at the edge of the base 10 is more serious, as shown in FIG. Figure 5 As shown, the accumulation of reaction byproducts 32 will reduce the heat transfer efficiency of the base 10, resulting in a decrease in the heating temperature of the wafer 60 to be processed during the reaction process. In the reaction of the ALC process, the lower the temperature, the higher the reaction rate, resulting in a gradual increase in the etching amount of the wafer 60 to be processed in the ALC process, especially the etching amount at the edge of the wafer 60 to be processed. The heating and baking method can only sublimate part of the reaction byproducts 32 into gas and then discharge it from the exhaust hole 21 of the pump ring 20, but it cannot completely and timely effectively reduce the accumulation of reaction byproducts 32 on the surface of the base 10, resulting in a decrease in the overall process efficiency of ALC and requiring higher maintenance costs.

[0051] The utility model provides an air vent 11 at the center of the base 10 to allow gas to enter the air duct 15. The gas ejected from the air vent 11 to the upper surface of the base 10 can discharge the reaction by-products 32 to the area outside the surface of the base 10, so that the reaction by-products 32 cannot be deposited on the base 10, thereby fundamentally solving the problem of the reaction by-products 32 being deposited on the surface of the base 10, greatly reducing the frequency of pausing the process for inspection and cleaning the base 10, reducing maintenance costs, and improving production efficiency. At the same time, it is only necessary to add an air vent 11 on the base 10 to connect it to the air duct 15, with minor changes, so low-cost industrial applications can be carried out.

[0052] Specifically, the edge of the gas spray device 30 is connected to the upper surface of the pump ring 20 .

[0053] Specifically, Figure 1-Figure 2 As shown in FIG. 1 , the same purge gas 14 as that of the purge channel 12 is introduced into the vent hole 11 to improve the use efficiency of the purge gas 14. Different vent pipes 15 can also be used to introduce different gases into the vent hole 11 and the purge channel 12 respectively according to needs.

[0054] In one embodiment, the gas flow rate of the ventilation pipe 15 entering the ventilation hole 11 is greater than or equal to 1 / 4 of the gas flow rate sprayed by the gas spray device 30 .

[0055] The utility model sets the gas flow rate ratio of the vent hole 11 and the gas flow rate of the gas spray device 30 to ensure that the gas flow rate of the vent hole 11 is sufficient to completely exclude the reaction by-products 32 from the area outside the surface of the base 10, further reducing the possibility of the reaction by-products 32 being deposited on the surface of the base 10.

[0056] In one embodiment, Figure 6-Figure 7 The figure shows a top view and a side view of a semiconductor process device, wherein the vent hole 11 is provided with a protective cover structure 40, wherein the protective cover structure 40 includes a protective surface 41 and a positioning rod 42, wherein the positioning rod 42 is fixedly connected to the protective surface 41, wherein the projection of the protective surface 41 on the first plane covers the projection of the vent hole 11 on the first plane, wherein the positioning rod 42 is located inside the vent hole 11, and wherein the outer diameter of the positioning rod 42 is less than or equal to the inner diameter of the vent hole 11.

[0057] The utility model provides a protective cover structure 40 to prevent the gas blown in from the vent hole 11 below the base 10 from directly blowing the wafer 60 to be processed arranged on the base 10, so as to ensure the accuracy of the wafer position and the stability of the placement.

[0058] In one embodiment, the projection of the protection surface 41 on the first plane is circular, and the diameter of the projection of the protection surface 41 on the first plane is greater than or equal to 3 times the aperture of the vent hole 11 .

[0059] The utility model further ensures that the protective surface 41 can achieve position stability of the wafer 60 to be processed placed on the base 10 by setting the size relationship between the protective surface 41 and the vent hole 11, thereby preventing the wafer 60 to be processed from being blown by the gas ejected from the vent hole 11.

[0060] In one embodiment, the protective cover structure 40 also includes an elastic member, and one end of the positioning rod 42 away from the protective surface 41 is connected to the elastic member; when the ventilation duct 15 does not pass gas into the ventilation hole 11, the protective surface 41 closes the ventilation hole 11; when the ventilation duct 15 passes gas into the ventilation hole 11, the protective surface 41 rises and stretches the elastic member.

[0061] In one embodiment, when the ventilation pipe 15 does not pass gas into the ventilation hole 11, the elastic member is at its original length.

[0062] The utility model arranges an elastic member connected to the positioning rod 42, so that when gas is passed into the vent hole 11, the protective surface 41 is blown upward by the gas of the vent hole 11 to open the vent hole 11 and the elastic member is stretched at the same time; when gas is not passed into the vent hole 11, the protective surface 41 automatically falls back onto the vent hole 11 as the elastic member shrinks to its original length to close the vent hole 11, so that the gas flow rate ejected from the vent hole 11 can be controlled by the gas pressure passed into the vent hole 11, so as to flexibly adjust the gas flow rate required by the vent hole 11 and maximize the efficiency of the gas passing into the vent hole 11.

[0063] In one embodiment, a step groove is provided on the upper surface of the center of the base 10, the projection of the step groove on the first plane covers the projection of the protective surface 41 on the first plane, the protective surface 41 is placed in the step groove, and the vent hole 11 is located on the bottom surface of the step groove.

[0064] The utility model sets a step groove on the upper surface of the base 10 so that the protection surface 41 can be placed in the step groove, thereby reducing the occupation of the space between the upper surface of the base 10 and the wafer 60 to be processed by the protection surface 41, and reducing the possibility of collision with the wafer 60 to be processed.

[0065] In one embodiment, the positioning rod 42 is a liftable structure, and the lifting and lowering of the positioning rod 42 drives the lifting and lowering of the protection surface 41 to control the protection surface 41 to close or open the vent hole 11 .

[0066] The utility model sets the positioning rod 42 as a liftable structure, so that it can flexibly adapt to the height requirements of the equipment for the protective cover structure 40, thereby improving the flexibility of application to different application scenarios.

[0067] In one embodiment, the positioning rod 42 is fixed at a preset position on the central axis of the base 10 , and the position where the positioning rod 42 is fixedly connected to the protection surface 41 is higher than the upper surface of the base 10 .

[0068] The utility model fixes the positioning rod 42 at a fixed height to ensure that the protective cover structure 40 can protect the wafer 60 to be processed on the base 10 from being affected by the gas blown by the vent hole 11 while ensuring the effectiveness of exhausting the reaction by-products 32 .

[0069] In one embodiment, the lower surface of the protection surface 41 is provided with a guide groove and / or a guide protrusion structure.

[0070] The utility model arranges guide grooves and guide protrusion structures on the lower surface of the protective surface 41, thereby further improving the guiding effect of the protective surface 41 on the gas ejected from the vent hole 11, further improving the blocking efficiency of the reaction byproducts 32 at the edge of the base 10, and further reducing the influence of the gas ejected from the vent hole 11 on the position stability of the wafer 60 to be processed through the guide flow.

[0071] In one embodiment, the semiconductor process device includes a plurality of the vent holes 11, the plurality of the vent holes 11 surround the center point of the base 10, a projection of a penetration path of each of the vent holes 11 in the base 10 on the first plane extends along the radial direction of the base 10, and a distance between a position of each of the vent holes 11 on the upper surface of the base 10 and the center of the base 10 is greater than a distance between a position of the vent holes 11 on the lower surface of the base 10 and the center of the base 10.

[0072] The utility model sets the vent hole 11 to penetrate the base 10 obliquely outward along the radial direction of the base 10, so that the gas ejected from the base 10 through the vent hole 11 is directly ejected outward to the edge of the base 10, thereby reducing the force of the gas ejected from the vent hole 11 on the wafer 60 to be processed placed above the base 10, reducing the possibility of shifting the wafer 60 to be processed, and improving the position stability of the wafer 60 to be processed.

[0073] In one embodiment, the semiconductor processing apparatus is used for an atomic layer cleaning process.

[0074] The utility model is used to solve the problem of reaction byproducts 32 depositing on the surface of the base 10 carrying the wafer 60 to be processed in the atomic layer cleaning process. Specifically, it can also be used to solve other process problems in which reaction byproducts 32 are deposited on the base 10 carrying the wafer 60 to be processed during the reaction process.

[0075] In one embodiment, the semiconductor process device is located in a reaction chamber of an epitaxial process device. Specifically, it can also be used in other process devices that can use the solution of the utility model.

[0076] In one embodiment, Figure 1-Figure 2 As shown, the base 10 also includes a plurality of lifting holes 13, and the base 10 is used to place the wafer 60 to be processed. The lifting holes 13 pass through the base 10, and the lifting holes 13 do not overlap with the vent holes 11. A lifting structure is placed in the lifting holes 13, and the lifting structure can move up and down in the lifting holes 13 along the direction of the central axis of the base 10 to transfer the wafer 60 to be processed on the base 10.

[0077] The semiconductor process structure of the utility model can also be applied to the above-mentioned device provided with the lifting hole 13 and the lifting structure (pin needle). In such devices of the prior art, the reaction byproducts 32 will also easily accumulate in the lifting hole 13, blocking the lifting hole 13, thereby making it impossible for the lifting structure to move up and down, affecting the transmission of the wafer 60 to be processed. The utility model prevents the reaction byproducts 32 from being deposited on the surface of the base 10 by providing the vent hole 11 on the base 10, and also avoids the accumulation of the reaction byproducts 32 in the lifting hole 13, thereby improving the reliability of the lifting structure.

[0078] In one embodiment, the side of the base 10 is surrounded by an edge ring, and there is a preset distance between the outer edge of the edge ring and the inner edge of the pump ring 20 on the first plane to form the purge channel 12 .

[0079] In one embodiment, the gas spray device 30 is used to introduce ammonia and hydrofluoric acid gas, and the ventilation pipe 15 is used to introduce one or more of hydrogen, argon or nitrogen. Specifically, it can also be used to introduce other suitable gases.

[0080] In one embodiment, the semiconductor process device further comprises a support structure, wherein the support structure is fixed on the base 10 , and the positions of the support structure, the vent holes 11 and the lifting holes 13 do not overlap.

[0081] In one embodiment, Figure 1-Figure 2 As shown, the supporting structure is a sapphire ball head 50 .

[0082] In summary, the semiconductor process device of the utility model can prevent the accumulation of reaction by-products on the base by setting a vent hole in the center of the base, thereby improving the accuracy of the etching amount; at the same time, by setting a protective cover structure in the vent hole, it can prevent the gas in the vent hole from causing the wafer to be processed set on the base to shift; in addition, by setting a positioning rod of the protective cover structure that can be raised and lowered, the vent hole is closed after the reaction is stopped, thereby further reducing the impact of the gas in the vent hole on the wafer to be processed and improving the convenience of operation.

[0083] Therefore, the utility model effectively overcomes various shortcomings in the prior art and has high industrial utilization value.

[0084] The above embodiments are merely illustrative of the principles and effects of the present invention, and are not intended to limit the present invention. Anyone familiar with the technology may modify or alter the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or alterations made by a person of ordinary skill in the art without departing from the spirit and technical concept disclosed in the present invention shall still be covered by the claims of the present invention.

Claims

1. A semiconductor process device, It is characterized in that The semiconductor process device comprises: a base, a pump ring, a gas spray device and a ventilation pipeline; A vent hole is provided in the central area of ​​the base, the vent hole passes through the base, the vent pipe is located below the base, and the vent hole is communicated with the vent pipe; The pump ring is an annular side wall surrounding the base, and the pump ring is provided with an exhaust hole. The gas spray device is arranged above the base; the plane perpendicular to the central axis of the base is the first plane, and there is a preset distance between the projection of the inner edge of the pump ring on the first plane and the projection of the outer edge of the base on the first plane to form a purge channel, and the ventilation pipe is connected to the purge channel.

2. The semiconductor process device according to claim 1, It is characterized in that The gas flow rate of the ventilation pipe entering the ventilation hole is greater than or equal to 1 / 4 of the gas flow rate sprayed by the gas spray device.

3. The semiconductor process device according to claim 1, It is characterized in that The vent hole is provided with a protective cover structure, which includes a protective surface and a positioning rod, the positioning rod is fixedly connected to the protective surface, the projection of the protective surface on the first plane covers the projection of the vent hole on the first plane, the positioning rod is located in the vent hole, and the outer diameter of the positioning rod is less than or equal to the inner diameter of the vent hole.

4. The semiconductor process device according to claim 3, It is characterized in that The projection of the protection surface on the first plane is circular, and the diameter of the projection of the protection surface on the first plane is greater than or equal to 3 times the diameter of the vent hole.

5. The semiconductor process device according to claim 3, It is characterized in that The protective cover structure also includes an elastic member, and one end of the positioning rod away from the protective surface is connected to the elastic member; when the ventilation pipe does not pass gas into the ventilation hole, the protective surface closes the ventilation hole; when the ventilation pipe passes gas into the ventilation hole, the protective surface rises and stretches the elastic member.

6. The semiconductor process device according to claim 5, It is characterized in that A step groove is provided on the upper surface of the center of the base, the projection of the step groove on the first plane covers the projection of the protective surface on the first plane, the protective surface is placed in the step groove, and the vent is located on the bottom surface of the step groove.

7. The semiconductor process device according to claim 3, It is characterized in that The positioning rod is a liftable structure, and the lifting of the positioning rod drives the lifting of the protective surface to control the protective surface to close or open the vent; or the positioning rod is fixed at a preset position on the central axis of the base, and the position where the positioning rod is fixedly connected to the protective surface is higher than the upper surface of the base.

8. The semiconductor process device according to claim 3, It is characterized in that The lower surface of the protective surface is provided with a guide groove and / or a guide protrusion structure.

9. The semiconductor process device according to claim 1, It is characterized in that The base also includes a plurality of lifting holes, and the base is used to place the wafers to be processed. The lifting holes penetrate the base, and the lifting holes do not overlap with the ventilation holes. A lifting structure is placed in the lifting holes, and the lifting structure can move up and down in the lifting holes along the direction of the central axis of the base to transfer the wafers to be processed on the base.

10. The semiconductor process device according to claim 1, It is characterized in that The semiconductor process device includes a plurality of the vents, the plurality of the vents surround the center point of the base, a projection of a penetration path of each of the vents in the base on the first plane extends along the radial direction of the base, and a distance between a position of each of the vents on the upper surface of the base and the center of the base is greater than a distance between a position of the vents on the lower surface of the base and the center of the base.

Images