Gas shunting device with uniformly distributed plasmas

Abstract

The utility model relates to a gas shunting device with uniformly distributed plasmas, which comprises a gas inlet joint, a plasma production chamber, a bearing plate and a gas uniformizing device, the plasma production chamber is arranged above the bearing plate, and the gas uniformizing device is arranged below the bearing plate. The gas inlet connector, the plasma production chamber, the bearing plate and the gas uniformizing device are sequentially communicated, a flow dividing block is arranged in the plasma production chamber and wraps the gas inlet connector, and a gathering ring used for placing a wafer is arranged below the gas uniformizing device.

Description

Technical Field

[0001] The utility model relates to the technical field of semiconductor dry-process adhesive removal, in particular to a gas flow distribution device with uniform plasma distribution. Background Art

[0002] In wafer processing, inductively coupled plasma and heating platform systems are usually used to remove photoresist. When in use, oxygen is ionized under the action of high frequency and microwave energy in the reaction chamber of the vacuum plasma degumming machine to produce plasma mixed with oxygen ions, free oxygen atoms, oxygen molecules and electrons. The plasma is highly active to remove organic matter such as photoresist, and can also activate and thicken the wafer surface machine, improve the wettability of the wafer surface, and make the wafer surface more adhesive. For example, the existing authorized Chinese utility model patent publication number: CN220041777U, the scheme used in the prior art is that the airflow flows into the chamber through the top channel for ionization to obtain plasma, and then the plasma flows directly to the gas homogenization device for filtering and treatment, and finally the plasma is fed into the wafer for degumming operation.

[0003] In the current method, the plasma will flow directly from the middle of the chamber to the gas uniformity device, resulting in a problem that the degumming rate is faster in the middle and slower at the edge, which will affect the overall uniformity of the wafer and cause poor finished wafer results. Utility Model Content

[0004] In order to solve the above problems, the utility model provides a gas flow distribution device with uniform plasma distribution.

[0005] To achieve the above-mentioned purpose, the utility model adopts the following technical solution: the utility model relates to a gas diversion device for uniformly distributing plasma, comprising an air inlet connector, a plasma production chamber, a support plate and a gas uniforming device, wherein the plasma production chamber is installed above the support plate, and the gas uniforming device is installed below the support plate, the air inlet connector, the plasma production chamber, the support plate and the gas uniforming device are connected in sequence, a diversion block is provided inside the plasma production chamber, the diversion block covers the air inlet connector, and a gathering ring for placing wafers is provided below the gas uniforming device.

[0006] Preferably, the plasma production chamber comprises a cover plate and a chamber, the cover plate is sealed and installed on the chamber, and the air inlet joint passes through the cover plate and is connected to the chamber.

[0007] Preferably, an air inlet is provided at the center of the cover plate, the air inlet runs through the upper and lower surfaces of the cover plate, and the air inlet connector is installed in the air inlet.

[0008] Preferably, a plurality of air outlet holes are provided on the peripheral surface of the diverter block, and the air outlet holes are orderly distributed along the peripheral surface of the diverter block.

[0009] Preferably, the gas homogenizing device comprises a first air hole plate and a second air hole plate, and the first air hole plate is arranged above the second air hole plate.

[0010] Preferably, a plurality of through holes are distributed in an orderly array on the first air hole plate and the second air hole plate, and the through holes have a rounded rectangular shape with the same size.

[0011] In order to make the flow rate in the gas re-homogenizing device more stable and uniform, preferably, the through holes of the first air hole plate and the second air hole plate are arranged in a criss-cross pattern in an up-and-down relationship.

[0012] Preferably, an air-uniform interlayer is provided between the first air-hole plate and the second air-hole plate.

[0013] Preferably, the gathering ring fixes and connects the air homogenizing device and the supporting plate sequentially from bottom to top via a fixing member.

[0014] The beneficial effects of the utility model are as follows: the utility model adds air outlet holes on the peripheral surface of the shunt block, and after the gas enters the shunt block, it flows out through a large number of orderly distributed air outlet holes and diffuses to the edge of the chamber, so that the gas can enter the uniform gas device from the chamber more evenly; the utility model also gathers the free radicals in the plasma passing through the uniform gas device by adding a gathering ring, so that the wafer can be continuously debonded at a high concentration. The utility model avoids the problem of fast middle debonding rate and slow edge rate in the prior art, ensures the uniformity of wafer debonding, and improves the overall quality effect of the wafer. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] Figure 1 It is the overall structural diagram of the utility model.

[0016] Figure 2 It is an explosion schematic diagram of the utility model.

[0017] Figure 3 It is a cross-sectional structural diagram of the utility model.

[0018] Figure 4 It is the overall structural diagram of the diverter block of the utility model.

[0019] Figure 5 It is the overall structural diagram of the gas homogenizing device of the utility model.

[0020] Figure 6 It is a gas flow flow chart of the utility model.

[0021] Figure 7 This utility model Figure 6 Magnified image of .

[0022] Reference numerals

[0023] 1. Cover plate; 11. Air inlet; 12. Air inlet connector; 2. Chamber; 3. Diverter block; 31. Air outlet; 4. Support plate; 5. Air homogenizing device; 51. First air hole plate; 52. Second air hole plate; 53. Through hole; 54. Air homogenizing interlayer; 6. Gathering ring; 7. Wafer. DETAILED DESCRIPTION

[0024] See also Figure 1-7 As shown, the utility model is about a gas flow distribution device for uniform plasma distribution, including an inlet connector 12, a plasma production chamber, a support plate 4 and a gas homogenizing device 5, wherein the plasma production chamber is installed above the support plate 4, and the gas homogenizing device 5 is installed below the support plate 4, and the inlet connector 12, the plasma production chamber, the support plate 4 and the gas homogenizing device 5 are connected in sequence. A flow distribution block 3 is provided inside the plasma production chamber, and the flow distribution block 3 covers the inlet connector, and a gathering ring 6 for placing a wafer 7 is provided below the gas homogenizing device 5.

[0025] Furthermore, in this embodiment, the plasma production chamber includes a cover plate 1 and a chamber 2, and the cover plate 1 is sealed and installed on the top of the chamber 2. An air inlet 11 is provided at the center of the cover plate 1, and the air inlet 11 runs through the upper and lower surfaces of the cover plate 1. The air inlet connector 12 is installed at the air inlet 11, one end of the air inlet connector 12 is connected to the chamber 2 through the air inlet 11, and the other end of the air inlet connector 12 is exposed on the surface of the cover plate 1 and connected to the factory service end (not shown in the figure), and the factory service end provides gas to flow from the air inlet connector 12 to the chamber 2.

[0026] In this embodiment, the chamber 2 is a component through which the gas ionization process flows, and the outside of the chamber 2 is connected to a power source (not shown in the figure). When the gas flows into the chamber 2, the chamber 2 is powered to generate a high-frequency electromagnetic field, so that the gas is evenly ionized and decomposed into plasma inside. Preferably, the chamber 2 is a hollow straight cylinder structure with openings at both ends, the upper end opening of the chamber 2 is assembled and connected with the cover plate 1, the chamber 2 covers the diverter block 3 inside, and the lower end opening of the chamber 2 is connected to the gas homogenizing device 5.

[0027] In this embodiment, the diverter block 3 has a cylindrical shell structure. The diverter block 3 is installed at the center of the lower end of the cover plate 1 to cover the air inlet 11. The peripheral surface of the diverter block 3 is provided with a plurality of air outlet holes 31. The air outlet holes 31 are orderly distributed along the peripheral surface of the diverter block 3. It should also be noted that no air outlet holes 31 are provided at the bottom of the diverter block 3. Therefore, when the gas enters from the air inlet interface, the gas first flows into the diverter block 3 and cannot flow directly into the gas homogenizing device 5 from the center of the chamber 2. The gas needs to diffuse from the air outlet holes 31 on the peripheral surface of the diverter block 3 to the edge of the chamber 2, and the gas flows downward from the edge of the chamber 2 to gradually fill the entire chamber 2, and then flows to the gas homogenizing device 5.

[0028] In this embodiment, the gas homogenizing device 5 includes a first pore plate 51 and a second pore plate 52, wherein the first pore plate 51 is arranged above the second pore plate 52, and a plurality of through holes 53 are distributed in an orderly array on the first pore plate 51 and the second pore plate 52, wherein the through holes 53 are in the shape of a rounded rectangle of the same size, and the through holes 53 of the first pore plate 51 and the second pore plate 52 are arranged in a crisscross pattern, so that the transverse diameters of the through holes 53 are inconsistent, so that the flow rate of the gas in the gas homogenizing device 5 is more stable and uniform. More specifically, the first pore plate 51 is used for primary filtering of other substances except free radicals for the plasma flowing into the chamber 2, and the second pore plate 52 is used for secondary filtering of other substances except free radicals for the plasma filtered by the first pore plate 51. In addition, a gas-uniform layer 54 is provided between the first air hole plate 51 and the second air hole plate 52. The gas-uniform layer 54 is used to accumulate plasma filtered by the first air hole plate 51. After a certain amount of accumulation, the gas is dispersed for the second time through the second air hole plate 52, so that the flow rate of the gas from the gas-uniform device 5 to the gathering ring 6 is more uniform.

[0029] In addition, a carrier (not shown in the figure) is provided below the gathering ring 6, and the carrier is used to receive the product wafer 7. The function of the gathering ring 6 is to gather the free radicals in the plasma passing through the uniform gas device 5 to uniformly treat the surface of the product wafer 7.

[0030] The gas flow process of the utility model is as follows: first, the factory service end provides gas to flow from the air inlet connector 12 to the diverter block 3, and then diffuses and flows out from the air outlet 31 on the peripheral surface of the diverter block 3 to the edge of the chamber 2. The gas flows downward from the edge of the chamber 2 and gradually fills the entire chamber 2. At the same time, the chamber 2 is energized to generate a high-frequency electromagnetic field, so that the gas is evenly ionized and decomposed into plasma inside. After the gas is ionized into plasma, it flows into the first air hole plate 51 of the gas homogenizing device 5. The first air hole plate 51 performs a primary filtration of other substances in the plasma except free radicals. After the primary filtration, the plasma flows to the gas homogenizing interlayer 54, and then flows from the gas homogenizing interlayer 54 to the second air hole plate 52 for secondary filtration. After the secondary filtration, the plasma enters the gathering ring 6 to perform degumming treatment on the surface of the wafer 7. This process ensures the uniformity of degumming.

[0031] The utility model adds gas outlet holes 31 on the peripheral surface of the shunt block 3. After the gas enters the shunt block 3, it flows out through a large number of orderly distributed gas outlet holes 31 and diffuses to the inner edge of the chamber 2, so that the gas can enter the gas homogenizing device 5 from the chamber 2 more evenly; the utility model also adds a gathering ring 6 to gather the free radicals in the plasma passing through the gas homogenizing device 5, so that the wafer 7 can be continuously debonded at a high concentration. The utility model avoids the problem of fast middle debonding rate and slow edge rate in the prior art, ensures the uniformity of debonding of the wafer 7, and improves the overall quality effect of the wafer 7.

[0032] The above implementation modes are merely descriptions of the preferred implementation modes of the present invention, and are not intended to limit the scope of the present invention. Without departing from the design spirit of the present invention, various modifications and improvements made to the technical solutions of the present invention by ordinary engineering and technical personnel in the field shall fall within the protection scope determined by the claims of the present invention.

Claims

1. A gas flow distribution device for uniform plasma distribution, comprising an air inlet connector, a plasma production chamber, a support plate and a gas homogenizing device, wherein the plasma production chamber is installed above the support plate, the gas homogenizing device is installed below the support plate, the air inlet connector, the plasma production chamber, the support plate and the gas homogenizing device are connected in sequence, and characterized in that: A shunt block is provided inside the plasma production chamber, and the shunt block covers the gas inlet joint. A gathering ring for placing wafers is provided below the gas homogenizing device.

2. A gas flow distribution device for uniform plasma distribution according to claim 1, characterized in that: The plasma production chamber comprises a cover plate and a chamber, wherein the cover plate is sealed and installed on the chamber, and the air inlet joint passes through the cover plate and is connected to the chamber.

3. A gas flow distribution device for uniform plasma distribution according to claim 2, characterized in that: An air inlet is arranged at the center of the cover plate, the air inlet runs through the upper and lower surfaces of the cover plate, and the air inlet connector is installed in the air inlet.

4. The gas flow distribution device for uniform plasma distribution according to claim 1, characterized in that: The peripheral surface of the diverter block is provided with a plurality of air outlet holes, and the air outlet holes are orderly distributed along the peripheral surface of the diverter block.

5. The gas flow distribution device for uniform plasma distribution according to claim 1, characterized in that: The gas homogenizing device comprises a first air hole plate and a second air hole plate, wherein the first air hole plate is arranged above the second air hole plate.

6. A gas flow distribution device for uniform plasma distribution according to claim 5, characterized in that: A plurality of through holes are distributed in an orderly array on the first air hole plate and the second air hole plate, and the through holes are in the shape of a rounded rectangle with the same size.

7. A gas flow distribution device for uniform plasma distribution according to claim 6, characterized in that: The through holes of the first pore plate and the second pore plate are arranged in a crisscross pattern up and down.

8. The gas flow distribution device for uniform plasma distribution according to claim 5, characterized in that: An air-uniform interlayer is provided between the first air-hole plate and the second air-hole plate.

9. The gas flow distribution device for uniform plasma distribution according to claim 1, characterized in that: The gathering ring fixes and connects the gas homogenizing device and the supporting plate sequentially from bottom to top through the fixing piece.

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