Furnace tube structure and coating equipment
By designing the air inlet holes of the furnace tube structure in the silicon wafer coating equipment, the film thickness uniformity problem caused by blockage of the inlet pipe is solved. The annular gas replenishment pipe and pulsed air intake mechanism are used to ensure uniform gas distribution, realizing the Improve film thickness uniformity and production efficiency.
Patent Information
- Application Number
- CN202422532642.8
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-10-21
- Publication Date
- 2024-12-31
- Estimated Expiration
- 2034-10-21
AI Technical Summary
In existing silicon wafer coating equipment, due to the clogging of the intake pipe, the uniformity of the film thickness on the silicon wafer is affected, resulting in increased rework and fluctuations in production efficiency.
A furnace tube structure is designed, in which the air inlet hole of the furnace body directly passes the source gas into the cavity of the furnace body, avoiding the blockage problem caused by the use of the air inlet pipe, and ensuring the gas through the annular air replenishment pipe and the pulse air intake mechanism. uniform distribution.
It effectively improves the uniformity of the coating film thickness, avoids rework and production efficiency fluctuations caused by intake pipe blockage, and improves the uniformity and production efficiency of the silicon wafer.
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Figure CN222274690U_ABST
Abstract
Description
Technical Field
[0001] The utility model relates to the technical field of coating equipment, in particular to a furnace tube structure and coating equipment. Background Art
[0002] With the development of photovoltaic technology, the use of silicon wafers to produce solar cells has attracted widespread attention due to its high photoelectric conversion efficiency and low cost. Among them, silicon wafers undergo a chemical vapor deposition process during the production process. The chemical vapor deposition process plays a vital role in the manufacturing process of solar cells. Through chemical vapor deposition, a thin film is deposited on a silicon wafer.
[0003] In this process, the silicon wafer is placed in a furnace tube, and source gas is introduced into the furnace tube through an air inlet pipe for deposition. In existing silicon wafer coating equipment, source gas is introduced into the furnace tube through an air inlet pipe. However, after a long period of production, silicon powder will cause the air inlet pipe to be blocked, affecting the uniformity of the film thickness on the silicon wafer. Utility Model Content
[0004] In view of this, the utility model proposes a furnace tube structure and a coating device, aiming to partially or completely solve the technical problem that when chemical vapor deposition is performed on silicon wafers in the furnace tube, the uniformity of the film thickness on the silicon wafer is affected due to the blockage of the air inlet pipe.
[0005] In order to achieve the above object, the technical solution of the utility model is implemented as follows:
[0006] In the first aspect, an embodiment of the utility model provides a furnace tube structure, which includes a furnace body, a cover plate assembly, an oxygen inlet pipe, a monitoring element, a tail exhaust pipe and an annular air supply pipe; the furnace body has a furnace mouth part and a furnace tail part, the furnace mouth part is connected to the cover plate assembly and surrounded by a furnace body cavity, and the furnace tail part is provided with an air inlet hole and a tail exhaust hole; the oxygen inlet pipe is inserted into the furnace body cavity from the furnace mouth part to transport oxygen from the outside of the furnace tube structure to the furnace body cavity; one end of the tail exhaust pipe passes through the furnace tail part and is inserted into the furnace body cavity through the tail exhaust hole; the monitoring element is arranged in the furnace body cavity to monitor the temperature of the furnace body cavity; the annular air supply pipe is arranged at the furnace mouth part, the annular air supply pipe has an air supply hole connected to the furnace body cavity, and the annular air supply pipe is used to transport the source gas from the outside of the furnace tube structure to the furnace body cavity.
[0007] Optionally, the cover plate assembly includes a cover plate, a cooling assembly and a flange, and the cover plate is connected to the cooling assembly and the flange respectively; the flange is connected to the furnace mouth.
[0008] Optionally, the furnace tube structure further includes an air inlet pipe, one end of which passes through the air inlet hole, penetrates the furnace tail portion and is inserted into the furnace body cavity.
[0009] Optionally, the length of the air inlet pipe in the furnace cavity is L7, the length of the furnace body is L8, and the ratio of L7 to L8 is in the range of 7 / 12-9 / 12.
[0010] Optionally, the air inlet pipe includes a first air inlet pipe and a second air inlet pipe, and the first air inlet pipe and the second air inlet pipe have different lengths in the furnace cavity.
[0011] Optionally, there are multiple air inlet holes, and the multiple air inlet holes are divided into a first group of air inlet holes and a second group of air inlet holes. The first group of air inlet holes and the second group of air inlet holes are arranged at intervals along a first direction, and the first group of air inlet holes and the second group of air inlet holes respectively include at least two air inlet holes.
[0012] Optionally, the first group of air inlet holes and the second group of air inlet holes are respectively spaced apart in a second direction perpendicular to the first direction, and along the first direction, the distance between the first group of air inlet holes and the second group of air inlet holes is L4, the radius of the furnace body is L1, and the ratio range of L4 to L1 is 1 / 5-2 / 5. The first group of air inlet holes has two air inlet holes, and the centers of the two air inlet holes and the center of the tail row holes are located on the same connecting line; the distance from the center of each air inlet hole in the first group of air inlet holes to the center of the tail row holes is L3, and the ratio range of L3 to L1 is 3 / 4-15 / 16; the second group of air inlet holes has two air inlet holes; along the second direction, the distance from the center of each air inlet hole in the second group of air inlet holes to the center of the tail row holes is L9, and the ratio range of L9 to L1 is 3 / 4-7 / 8.
[0013] Optionally, along the first direction, the first group of air inlet holes and the second group of air inlet holes are respectively arranged on both sides of the tail row holes, and the centers of the first group of air inlet holes and the second group of air inlet holes are located on the same connecting line with the center of the tail row holes; the distance between the air inlet hole closest to the center of the tail row holes in the first group of air inlet holes and the second group of air inlet holes and the center of the tail row holes is L6, the diameter of the furnace body is L2, and the ratio of L6 to L2 is in the range of 1 / 8-1 / 4; the distance between two adjacent air inlet holes in the first group of air inlet holes and the second group of air inlet holes is L5, and the ratio of L5 to L2 is in the range of 1 / 8-3 / 8.
[0014] In a second aspect, an embodiment of the utility model provides a coating device, which includes a coating chamber and a furnace tube structure as described above, which is arranged in the coating chamber.
[0015] Optionally, the coating equipment further comprises a pulse air intake mechanism, the air outlet end of the pulse air intake mechanism is connected to the air inlet hole of the furnace tube structure, and the pulse air intake mechanism is used to introduce source-carrying gas into the furnace tube structure through the air inlet hole.
[0016] The utility model discloses a furnace tube structure, in which source-carrying gas is directly introduced into the furnace body cavity through the air inlet hole of the furnace body, which can effectively avoid the blockage problem caused by using the air inlet pipe to introduce the source-carrying gas into the furnace body cavity, so as to improve the uniformity of the coating film thickness, ensure the uniformity of the film thickness between different silicon wafers and between and within different parts of a single silicon wafer, and avoid rework and production efficiency fluctuation caused by blockage of the air inlet pipe.
[0017] The above description is only an overview of the technical solution of the utility model. In order to more clearly understand the technical means of the utility model, it can be implemented in accordance with the contents of the specification. In order to make the above and other purposes, features and advantages of the utility model more obvious and easy to understand, the specific implementation methods of the utility model are listed below. BRIEF DESCRIPTION OF THE DRAWINGS
[0018] In order to more clearly illustrate the embodiments of the utility model or the technical solutions in the prior art, the drawings required for describing the embodiments are briefly introduced below.
[0019] Figure 1 This is a structural schematic diagram of the furnace tube structure according to an embodiment of the utility model at a first angle;
[0020] Figure 2 It is a structural schematic diagram of the furnace tube structure according to the embodiment of the utility model at a second angle;
[0021] Figure 3 for Figure 1 A structural diagram of the enlarged view of part A;
[0022] Figure 4 It is a structural schematic diagram of a perspective view of an annular air supply pipe in a furnace tube structure according to an embodiment of the utility model;
[0023] Figure 5 It is a structural schematic diagram of a perspective view of an air inlet pipe, a monitoring element, and an oxygen inlet pipe in the furnace tube structure according to an embodiment of the utility model;
[0024] Figure 6 The left side view of the furnace tube structure according to the embodiment of the utility model is a schematic diagram Figure 1 ;
[0025] Figure 7 The left side view of the furnace tube structure according to the embodiment of the utility model is a schematic diagram Figure 2 ;
[0026] Figure 8 It is a partial structural schematic diagram of the furnace tube structure according to the embodiment of the utility model at a third angle;
[0027] Fig. 9 It is a structural schematic diagram of the connection between the furnace tube structure and the pulse air intake mechanism according to an embodiment of the utility model;
[0028] Fig.10 It is a structural schematic diagram of the furnace tube structure in use state according to an embodiment of the utility model;
[0029] Fig.11 This is a schematic diagram of the first air intake method in the furnace tube structure according to an embodiment of the utility model;
[0030] Fig.12 This is a schematic diagram of a second air intake method in the furnace tube structure described in an embodiment of the utility model.
[0031] Description of reference numerals:
[0032] 10. furnace body; 11. air inlet pipe; 111. first air inlet pipe; 112. second air inlet pipe; 12. annular air supply pipe; 121. air supply hole; 13. furnace body cavity; 14. air inlet hole; 141. first group of air inlet holes; 142. second group of air inlet holes; 15. tail exhaust pipe; 16. tail exhaust hole; 20. oxygen air inlet pipe; 30. cover plate assembly; 40. flange; 50. cooling assembly; 60. monitoring element; 70. pulse air inlet mechanism; 80. cover plate; 90. silicon wafer assembly. DETAILED DESCRIPTION
[0033] The exemplary embodiments of the present invention will be described in more detail below with reference to the accompanying drawings. Although the exemplary embodiments of the present invention are shown in the accompanying drawings, it should be understood that the present invention can also be implemented in various forms and should not be limited by the embodiments described herein. On the contrary, these embodiments are provided to enable a more thorough understanding of the present invention and to fully convey the scope of the present invention to those skilled in the art.
[0034] Reference Figure 1 , which shows a schematic diagram of the structure of the furnace tube structure provided in the embodiment of the present application, and the furnace tube structure is suitable for use in a variety of equipment for the production of processed parts such as silicon wafers. For example, the furnace tube structure is used in a coating device to coat a processed part such as a silicon wafer, for example, to deposit a thin film on a silicon wafer. In the embodiment of the present application, a silicon wafer is used as an example for explanation.
[0035] Reference Figure 2 , Figure 4 and Figure 5As shown, in some embodiments, the furnace tube structure includes a furnace body 10, a cover plate assembly 30, an oxygen inlet pipe 20, a monitoring element 60, a tail exhaust pipe 15 and an annular air supply pipe 12; the furnace body 10 has a furnace mouth and a furnace tail, the furnace mouth is connected to the cover plate assembly 30 and is surrounded to form a furnace cavity 13, and the furnace tail is provided with an air inlet hole 14 and a tail exhaust hole 16; the oxygen inlet pipe 20 is inserted into the furnace cavity 13 from the furnace mouth to transfer oxygen from the furnace tube structure The gas is transported from the outside to the furnace body cavity 13; one end of the tail exhaust pipe 15 passes through the tail exhaust hole 16 and is inserted into the furnace body cavity 13 through the furnace tail; the monitoring element 60 is arranged in the furnace body cavity 13, and is used to monitor the temperature of the furnace body cavity 13; the annular air supply pipe 12 is arranged at the furnace mouth, and the annular air supply pipe 12 has an air supply hole 121 connected to the furnace body cavity 13, and the annular air supply pipe 12 is used to transport the source-carrying gas from the outside of the furnace tube structure to the furnace body cavity 13.
[0036] Among them, the cover plate assembly 30 is used to seal the furnace mouth of the furnace tube structure to enclose a furnace body cavity 13. The furnace body cavity 13 is suitable for arranging silicon wafers, forming a production environment suitable for silicon wafer coating, and accommodating source-carrying gas and oxygen used for coating.
[0037] The specific structure of the oxygen inlet pipe 20 inserted into the furnace cavity 13 from the furnace mouth can be set according to the use requirements, for example, refer to Figure 1 and Figure 3 As shown, the oxygen inlet pipe 20 is connected to the flange 40 in the cover plate assembly 30, and is inserted into the furnace cavity 13 from the furnace mouth after passing through the flange 40.
[0038] The monitoring element 60 is arranged in the furnace cavity 13, and is used to monitor the temperature of the furnace cavity 13 to ensure that the temperature in the furnace tube structure meets the production environment requirements. The monitoring element 60 is arranged according to the use requirements, for example, the monitoring element 60 is an inner pair tube for measuring temperature. The monitoring element 60 is used to be electrically connected to the coating equipment, and the monitoring element 60 transmits the temperature information in the furnace cavity 13 to the coating equipment. The coating equipment can adjust the temperature in the furnace cavity 13 by adjusting the temperature in the furnace chamber (the furnace tube structure is arranged in the furnace chamber of the coating equipment).
[0039] Since the pressure fluctuation in the furnace cavity 13 will affect the uniformity of the coating film thickness, the tail exhaust pipe 15 is used to exhaust the gas in the furnace cavity 13, for example, Figure 5 As shown, the tail exhaust pipe 15 is inserted into the tail exhaust hole 16 to ensure the pressure stability in the furnace cavity 13 by exhausting the internal gas, meet the pressure requirements in the furnace cavity 13 during processing, and avoid the influence of the pressure change in the furnace cavity 13 on the uniformity of the film thickness.
[0040] The specific structure of the annular air supply pipe 12 arranged at the furnace mouth can be set according to the use requirements, for example, refer to Figure 4As shown, the annular gas supply pipe 12 is connected to the cover plate assembly 30, the annular gas supply pipe 12 is arranged in the furnace body cavity 13, the gas supply hole 121 of the annular gas supply pipe 12 is connected to the furnace body cavity 13, and the annular gas supply pipe 12 is connected to the gas delivery pipe (not shown in the figure) outside the furnace tube structure, and is used to transport the source-carrying gas from the outside of the furnace tube structure to the furnace body cavity 13. The annular gas supply pipe 12 achieves the purpose of replenishing the source-carrying gas in the furnace body cavity 13, especially replenishing the concentration of the source-carrying gas at the furnace mouth, so as to increase the uniformity of the source-carrying gas in the furnace body cavity 13.
[0041] The uniformity of the film thickness of the thin film deposited on the silicon wafer will be affected by many factors. For example, the gas flow rate will affect the inconsistency of the film thickness between different silicon wafers and between and within different parts of a single silicon wafer. The inlet pipe for introducing the source gas (the source gas is, for example, silane) into the furnace cavity 13 will affect the gas flow rate when it is blocked. The blockage of the inlet pipe for introducing the source gas into the furnace cavity 13 is due to the fact that the coating process uses heating to cause the gaseous compounds to react on the surface of the silicon wafer and deposit into a solid film. In this way, it is inevitable that a layer of polycrystalline silicon will be deposited inside the inlet pipe during the air intake process. When the number of processes reaches a certain level, the problem of blockage of the inlet pipe of the source gas will occur, thereby affecting the uniformity of the film thickness of the polycrystalline silicon film. Usually, when the inlet pipe of the source gas is blocked, the production line needs to be cooled down and shut down to replace the inlet pipe of the source gas. The blockage of the intake pipe carrying the source gas will not only increase the difficulty of process control, but may even cause unnecessary rework; it will increase the risk of contamination of the furnace body 10 and the intake pipe; it will also affect the production capacity of the production line and increase the cost of consumables for replacing the intake pipe.
[0042] In the furnace tube structure of the embodiment of the present application, the source-carrying gas is directly introduced into the furnace body cavity 13 through the air inlet hole 14 of the furnace body 10, which can effectively avoid the blockage problem caused by using the air inlet pipe to introduce the source-carrying gas into the furnace body cavity 13, so as to improve the uniformity of the coating film thickness, ensure the uniformity of the film thickness between different silicon wafers and between and within different parts of a single silicon wafer, and avoid rework and production efficiency fluctuations caused by blockage of the air inlet pipe.
[0043] In some embodiments, Figure 3 and 4 As shown, the cover plate assembly 30 includes a cover plate 80, a cooling assembly 50 and a flange 40, and the cover plate 80 is connected to the cooling assembly 50 and the flange 40 respectively; the flange 40 is connected to the furnace mouth.
[0044] In the embodiment of the present application, the cover plate 80 is connected to the furnace mouth through the flange 40 . The flange 40 has the advantage of a secure connection, thereby ensuring the stability of the production environment such as pressure and temperature in the furnace cavity 13 .
[0045] The cooling assembly 50 can be used to cool the cover plate assembly 30 , especially to cool the seal in the cover plate assembly 30 , so as to prevent the temperature in the furnace cavity 13 from affecting the cover plate assembly 30 .
[0046] Poor sealing of the furnace cavity 13 may easily lead to a drop in the actual temperature in the furnace cavity 13 and a drop in the concentration of the source-carrying gas in the furnace cavity 13, thereby resulting in poor uniformity of the film thickness on the silicon wafer. In some embodiments, the cover assembly 30 further includes a seal that can seal the connection between the cover assembly 30 and the furnace mouth to ensure the sealing of the furnace cavity 13.
[0047] In some embodiments, Figure 2 and Figure 5 As shown, the furnace tube structure further includes an air inlet pipe 11 , one end of which passes through the furnace tail through an air inlet hole 14 and is inserted into the furnace body cavity 13 .
[0048] In this embodiment, the air inlet pipe 11 can be used to assist air intake, that is, to assist in introducing the source-carrying gas into the furnace cavity 13 to ensure the concentration and uniformity of the source-carrying gas in the furnace cavity 13 .
[0049] In some embodiments, Figure 5 As shown, the length of the air inlet pipe 11 in the furnace cavity 13 is L7, the length of the furnace 10 is L8, and the ratio of L7 to L8 is 7 / 12-9 / 12. In the embodiment of the present application, when the ratio of the length L7 of the air inlet pipe 11 in the furnace cavity 13 to the length L8 of the furnace 10 is within the above range, the air inlet pipe 11 is not easy to be blocked, and the air inlet pipe 11 can replenish the source-carrying gas in the furnace cavity 13, so that the distribution of the source-carrying gas in the furnace cavity 13 is more uniform, and the concentration of the source-carrying gas is guaranteed, so as to improve the uniformity of the film thickness between different silicon wafers, and between and within different parts of a single silicon wafer.
[0050] It can be understood that the specific ratio of L7 to L8 can be set according to usage requirements. For example, the ratio of L7 to L8 is 7 / 12, 11 / 18, 23 / 36, 2 / 3, 25 / 36, 13 / 18, 9 / 12 (i.e., 3 / 4), and multiple values between the above ratios.
[0051] In some embodiments, the length L7 of the air inlet pipe 11 in the furnace cavity 13 ranges from 2300 mm to 2800 mm. It is understood that the specific length of L7 is set according to the use requirements. For example, L7 is 2300 mm, 2350 mm, 2400 mm, 2450 mm, 2500 mm, 2550 mm, 2600 mm, 2650 mm, 2700 mm, 2750 mm, 2800 mm, and multiple values between the above values.
[0052] In some embodiments, the length L8 of the furnace body 10 ranges from 3300 mm to 4000 mm. It is understood that the length L8 of the furnace body 10 is set according to the specific use requirements. For example, L8 is 3300 mm, 3400 mm, 3500 mm, 3600 mm, 3700 mm, 3800 mm, 3900 mm, 4000 mm, and multiple values between the above values.
[0053] In some embodiments, reference Figure 8 As shown, the air inlet pipe 11 includes a first air inlet pipe 111 and a second air inlet pipe 112; the first air inlet pipe 111 and the second air inlet pipe 112 are located at different lengths in the furnace cavity 13. In the embodiment of the present application, the first air inlet pipe 111 and the second air inlet pipe 112 are used to assist in air intake, that is, to assist in introducing source-carrying gas into the furnace cavity 13, so as to ensure the concentration and uniformity of the source-carrying gas in the furnace cavity 13, thereby improving the uniformity of the coating film thickness.
[0054] In the embodiment of the present application, the first air inlet pipe 111 and the second air inlet pipe 112 are located at different lengths in the furnace body cavity 13, and the source-carrying gas can be introduced into different positions in the furnace body cavity 13 according to usage requirements to ensure the concentration and uniformity of the source-carrying gas in the furnace body cavity 13, thereby improving the uniformity of the coating film thickness.
[0055] In some embodiments, there are multiple air inlet holes 14, and the multiple air inlet holes 14 are divided into a first group of air inlet holes 141 and a second group of air inlet holes 142. The first group of air inlet holes 141 and the second group of air inlet holes 142 are arranged at intervals along a first direction, and the first group of air inlet holes 141 and the second group of air inlet holes 142 respectively include at least two air inlet holes 14.
[0056] In the embodiment of the present application, the vertical direction corresponding to the furnace tube structure when it is used horizontally is the first direction, that is, the Z-axis direction. It should be noted here that the XZ-axis coordinate system is only used to illustrate the directionality of this solution, so as to facilitate the explanation of the relevant technical description. Further, at least two air inlet holes 14 of the first group of air inlet holes 141 and at least two air inlet holes 14 of the second group of air inlet holes 142 are parallel and perpendicular to the first direction.
[0057] In some embodiments, reference Figure 6As shown, the first group of air inlet holes 141 and the second group of air inlet holes 142 are respectively arranged in a second direction (i.e., the X-axis direction) perpendicular to the first direction, and along the first direction, the distance between the first group of air inlet holes 141 and the second group of air inlet holes 142 is L4, the radius of the furnace body 10 is L1, and the ratio of L4 to L1 is 1 / 5-2 / 5. In the embodiment of the present application, when the distance between the first group of air inlet holes 141 and the second group of air inlet holes 142 is L4 and the ratio of the radius L1 of the furnace body 10 is within the above range, the uniformity of the source-carrying gas entering the furnace body cavity 13 through the first group of air inlet holes 141 and the second group of air inlet holes 142 can be effectively ensured, thereby improving the uniformity of the coating film thickness.
[0058] Further, see Figure 2 and Figure 6 As shown, at least two air inlet holes 14 of the first group of air inlet holes 141 are arranged at intervals along the second direction, and at least two air inlet holes 14 of the second group of air inlet holes 142 are also arranged at intervals along the second direction.
[0059] In some embodiments, the radius L1 of the furnace body 10 is in the range of 220 mm to 250 mm. It is understood that the radius L1 of the furnace body 10 is set according to the specific use requirements. For example, L1 is 220 mm, 225 mm, 230 mm, 235 mm, 240 mm, 245 mm, 250 mm, and multiple values between the above values.
[0060] In some embodiments, reference Figure 6 As shown, the first group of air inlet holes 141 has two air inlet holes 14, and the centers of the two air inlet holes 14 and the center of the tail hole 16 are located on the same connecting line; the distance from the center of each air inlet hole 14 in the first group of air inlet holes 141 to the center of the tail hole 16 is L3, and the ratio range of L3 to L1 is 3 / 4-15 / 16.
[0061] In the embodiment of the present application, the centers of the two air inlet holes 14 in the first group of air inlet holes 141 and the center of the tail row hole 16 are located on the same connecting line, and the connecting line is perpendicular to the Z-axis direction, that is, the connecting line is arranged along the X-axis direction. When the ratio of the distance L3 from the center of each air inlet hole 14 in the first group of air inlet holes 141 to the center of the tail row hole 16 to the radius L1 of the furnace body 10 is within the above range, the uniformity of the source-carrying gas entering the furnace body cavity 13 through the first group of air inlet holes 141 can be ensured, thereby improving the uniformity of the coating film thickness.
[0062] It can be understood that the specific ratio of L3 to L1 can be set according to usage requirements. For example, the ratio of L3 to L1 is 3 / 4, 25 / 32, 13 / 16, 27 / 32, 14 / 16, 29 / 32, 15 / 16, and multiple values between the above ratios.
[0063] In some embodiments, reference Figure 6 As shown, the second group of air inlet holes 142 has two air inlet holes 14; along the second direction (X-axis direction), the distance from the center of each air inlet hole 14 in the second group of air inlet holes 142 to the center of the tail row hole 16 is L9, and the ratio range of L9 to L1 is 3 / 4-7 / 8.
[0064] In the embodiment of the present application, the center line of the two air inlet holes 14 of the second group of air inlet holes 142 is arranged along the second direction. In the embodiment of the present application, along the second direction, when the ratio of the distance L9 from the center of each air inlet hole 14 in the second group of air inlet holes 142 to the center of the tail row hole 16 to the radius L1 of the furnace body 10 is within the above range, the uniformity of the source-carrying gas entering the furnace body cavity 13 through the second group of air inlet holes 142 can be ensured, thereby improving the uniformity of the coating film thickness.
[0065] It is understandable that the specific ratio of L9 to L1 can be set according to usage requirements. For example, the ratio of L9 to L1 is 3 / 4, 25 / 32, 13 / 16, 27 / 32, 14 / 16, and multiple values between the above ratios.
[0066] In some embodiments, reference Figure 8 As shown, the air inlet pipe 11 includes a first air inlet pipe 111 and a second air inlet pipe 112; the first air inlet pipe 111 is inserted into the air inlet holes 14 of the first group of air inlet holes 141, and the second air inlet pipe 112 is inserted into the air inlet holes 14 of the second group of air inlet holes 142; the first air inlet pipe 111 and the second air inlet pipe 112 have different lengths in the furnace body cavity 13. It can be understood that the first air inlet pipe 111 can be inserted into one of the air inlet holes 14 of the first group of air inlet holes 141, and the number of the first air inlet pipes 111 is the same as the number of the air inlet holes 14 in the first group of air inlet holes 141, or it can be less than the number of the air inlet holes 14 in the first group of air inlet holes 141; when the number of the first air inlet pipes 111 is less than the number of the air inlet holes 14 in the first group of air inlet holes 141, the first air inlet pipe 111 is not inserted into some of the air inlet holes 14 in the first group of air inlet holes 141. The second air intake pipe 112 may be inserted into an air intake hole 14 in the second group of air intake holes 142. The number of the second air intake pipes 112 may be the same as the number of the air intake holes 14 in the second group of air intake holes 142, or may be less than the number of the air intake holes 14 in the second group of air intake holes 142. When the number of the second air intake pipes 112 is less than the number of the air intake holes 14 in the second group of air intake holes 142, the second air intake pipe 112 is not inserted into some of the air intake holes 14 in the second group of air intake holes 142.
[0067] In some embodiments, reference Figure 7As shown, along the first direction, the first group of air inlet holes 141 and the second group of air inlet holes 142 are respectively arranged on both sides of the tail-discharge hole 16, and the centers of the first group of air inlet holes 141 and the second group of air inlet holes 142 are both located on the same connecting line as the center of the tail-discharge hole 16; that is, the first group of air inlet holes 141 includes at least one air inlet hole 14, and all the air inlet holes 14 in the first group of air inlet holes 141 are arranged along the first direction, and the second group of air inlet holes 142 includes at least one air inlet hole 14, and all the air inlet holes 14 in the second group of air inlet holes 142 are also arranged along the first direction. The distance between the air inlet hole 14 closest to the center of the tail-discharge hole 16 in the first group of air inlet holes 141 and the second group of air inlet holes 142 and the center of the tail-discharge hole 16 is L6, the diameter of the furnace body 10 is L2, and the ratio of L6 to L2 is in the range of 1 / 8-1 / 4. In the embodiment of the present application, when the ratio of L6 to L2 is within the above range, the uniformity of the source-carrying gas entering the furnace cavity 13 through the first group of air inlet holes 141 and the second group of air inlet holes 142 can be ensured, thereby improving the uniformity of the coating film thickness.
[0068] It is understandable that the specific ratio of L6 to L2 can be set according to usage requirements, for example, the ratio of L6 to L2 is 1 / 8, 5 / 32, 6 / 32, 7 / 32, 1 / 4, and multiple values between the above ratios.
[0069] In some embodiments, the distance between two adjacent air inlet holes 14 in the first group of air inlet holes 141 and the second group of air inlet holes 142 is L5, and the ratio of L5 to L2 is in the range of 1 / 8-3 / 8. In the embodiment of the present application, when the ratio of L5 to L2 is in the above range, the uniformity of the source-carrying gas entering the furnace cavity 13 through the first group of air inlet holes 141 and the second group of air inlet holes 142 can be ensured, thereby improving the uniformity of the coating film thickness.
[0070] It can be understood that the distance between two adjacent air inlet holes 14 in the first group of air inlet holes 141 is L5, and the distance between two adjacent air inlet holes 14 in the second group of air inlet holes 142 is L5. The specific ratio of L5 to L2 can be set according to usage requirements. For example, the ratio of L5 to L2 is 1 / 8, 5 / 32, 6 / 32, 7 / 32, 1 / 4, 9 / 32, 10 / 32, 11 / 32, 3 / 8, and multiple values between the above ratios.
[0071] In the furnace tube structure of the embodiment of the present application, the source-carrying gas is directly introduced into the furnace body cavity 13 through the air inlet hole 14 of the furnace body 10, which can effectively avoid the blockage problem caused by using the air inlet pipe to introduce the source-carrying gas into the furnace body cavity 13, so as to improve the uniformity of the coating film thickness, ensure the uniformity of the film thickness between different silicon wafers and between and within different parts of a single silicon wafer, and avoid rework and production efficiency fluctuations caused by blockage of the air inlet pipe.
[0072] The furnace tube structure also assists in air intake through the air intake pipe 11 to further ensure the concentration and uniformity of the source-carrying gas in the furnace cavity 13, thereby improving the uniformity of the coating film thickness. In addition, the ratio of the length L7 of the air intake pipe 11 in the furnace cavity 13 to the length L8 of the furnace body 10 is in the range of 7 / 12-9 / 12, and the air intake pipe 11 is not easily blocked to affect the air intake effect.
[0073] In actual use, the furnace tube structure of the embodiment of the present application can control the air intake pressure so that the source-carrying gas entering the furnace cavity 13 through the air intake hole 14 is more evenly distributed, and the problem of blockage of the air intake spray pipe is solved.
[0074] An embodiment of the present application also provides a coating device, which includes a coating chamber and a furnace tube structure as described above, which is arranged in the coating chamber.
[0075] Since the furnace tube structure in the coating equipment directly introduces the source gas into the furnace cavity 13 through the air inlet 14 of the furnace body 10, the blockage problem caused by using the air inlet pipe to introduce the source gas into the furnace cavity 13 can be effectively avoided, so as to improve the uniformity of the coating film thickness, ensure the uniformity of the film thickness between different silicon wafers, and between and within different parts of a single silicon wafer, and avoid rework and production efficiency fluctuations caused by the blockage of the air inlet pipe. Furthermore, the silicon wafers produced by the coating equipment have the advantages of good film thickness uniformity and high production efficiency, and the silicon wafers meet the production of subsequent processes.
[0076] In some embodiments, Fig. 9 As shown, the coating equipment also includes a pulse air intake mechanism 70 , the air outlet end of the pulse air intake mechanism 70 is connected to the air inlet hole 14 of the furnace tube structure, and the pulse air intake mechanism 70 is used to introduce source-carrying gas into the furnace tube structure through the air inlet hole 14 .
[0077] Among them, the pulse air intake mechanism 70 is a device for controlling the flow of gas, which realizes intermittent supply of gas by periodic opening and closing. The working principle of the pulse air intake mechanism 70 is generally to use a solenoid valve or other types of valves to control the on and off of the gas. When the valve is opened, the gas enters the furnace body cavity 13 in the furnace tube structure; when the valve is closed, the gas flow stops. This periodic switching action can be controlled by a preset program or manual operation, so as to achieve precise regulation of the gas flow. The pulse air intake mechanism 70 is a conventional component, and the specific structure of the pulse air intake mechanism 70 is selected according to the use requirements. For example, the Haskel series of air booster pumps are used in combination with a throttle valve or a solenoid valve to realize pulse air intake inside the furnace tube.
[0078] In the embodiment of the present application, the source-carrying gas can be introduced into the furnace body cavity 13 through the pulse air intake mechanism 70 in various ways such as pressure cycle fluctuations, pulse air intake, or air intake at different pressures, so that the source-carrying gas quickly fills the furnace body cavity 13. The source-carrying gas in the furnace body cavity 13 has good uniformity, thereby improving the uniformity of the coating film thickness.
[0079] Reference Fig.10 As shown, the source-carrying gas introduced into the furnace cavity 13 can reach different positions of the furnace cavity 13 respectively (refer to the arrows) to coat the multiple silicon wafers in the silicon wafer assembly 90.
[0080] When the coating equipment is in use, there are many ways to intake air. For example, refer to Fig.11 As shown, the pulse air intake mechanism 70 has pressure cycle fluctuations or pulse air supply, so that the air flow range covers the entire furnace tube length. Fig.12 As shown, the pulse air intake mechanism 70 is used to intake air at different pressures through a plurality of air intake holes 14 ( 14 a , 14 b , 14 c ), so that the air flow range covers the entire length of the furnace tube.
[0081] It should be noted that, in this article, relational terms such as first and second, etc. are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the terms "include", "comprise" or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or device. In the absence of further restrictions, the elements defined by the sentence "comprise a ..." do not exclude the existence of other identical elements in the process, method, article or device including the elements.
[0082] Each embodiment in this specification is described in a related manner, and the same or similar parts between the embodiments can be referred to each other, and each embodiment focuses on the differences from other embodiments. For the embodiments of the device, electronic device, computer-readable storage medium and computer program products containing instructions, since they are basically similar to the method embodiments, the description is relatively simple, and the relevant parts can be referred to the partial description of the method embodiments.
[0083] The above description is only a preferred embodiment of the present invention and is not intended to limit the protection scope of the present invention. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention are included in the protection scope of the present invention.
Claims
1. A furnace tube structure, characterized in that: The furnace tube structure comprises a furnace body (10), a cover plate assembly (30), an oxygen intake pipe (20), a monitoring element (60), a tail exhaust pipe (15) and an annular air supply pipe (12); The furnace body (10) comprises a furnace mouth portion and a furnace tail portion, the furnace mouth portion is connected to the cover plate assembly (30) and encloses a furnace body cavity (13), and the furnace tail portion is provided with an air inlet hole (14) and a tail exhaust hole (16); The oxygen inlet pipe (20) is inserted into the furnace cavity (13) from the furnace mouth portion, so as to transport oxygen from the outside of the furnace tube structure into the furnace cavity (13); One end of the tail discharge pipe (15) passes through the tail discharge hole (16), penetrates the furnace tail portion and is inserted into the furnace body cavity (13); The monitoring element (60) is arranged in the furnace cavity (13) and is used to monitor the temperature of the furnace cavity (13); The annular gas supply pipe (12) is arranged at the furnace mouth, and the annular gas supply pipe (12) has a gas supply hole (121) connected to the furnace body cavity (13). The annular gas supply pipe (12) is used to transport the source-carrying gas from the outside of the furnace tube structure to the furnace body cavity (13).
2. The furnace tube structure according to claim 1, characterized in that: The cover plate assembly (30) comprises a cover plate (80), a cooling assembly (50) and a flange (40); the cover plate (80) is connected to the cooling assembly (50) and the flange (40) respectively; and the flange (40) is connected to the furnace mouth.
3. The furnace tube structure according to claim 1, characterized in that: The furnace tube structure further comprises an air intake pipe (11), one end of which passes through the air intake hole (14), penetrates the furnace tail portion and is inserted into the furnace body cavity (13).
4. The furnace tube structure according to claim 3, characterized in that: The length of the air inlet pipe (11) in the furnace cavity (13) is L7, the length of the furnace body (10) is L8, and the ratio of L7 to L8 is in the range of 7 / 12-9 / 12.
5. The furnace tube structure according to claim 3, characterized in that: The air intake pipe (11) comprises a first air intake pipe (111) and a second air intake pipe (112); the first air intake pipe (111) and the second air intake pipe (112) have different lengths when located in the furnace body cavity (13).
6. The furnace tube structure according to claim 1, characterized in that: The air inlet holes (14) are multiple, and the multiple air inlet holes (14) are divided into a first group of air inlet holes (141) and a second group of air inlet holes (142). The first group of air inlet holes (141) and the second group of air inlet holes (142) are arranged at intervals along a first direction, and the first group of air inlet holes (141) and the second group of air inlet holes (142) respectively include at least two of the air inlet holes (14).
7. The furnace tube structure according to claim 6, characterized in that: The first group of air inlet holes (141) and the second group of air inlet holes (142) are respectively arranged at intervals in a second direction perpendicular to the first direction, and along the first direction, the distance between the first group of air inlet holes (141) and the second group of air inlet holes (142) is L4, the radius of the furnace body (10) is L1, and the ratio of L4 to L1 is in the range of 1 / 5-2 / 5; The first group of air inlet holes (141) comprises two air inlet holes (14), the centres of the two air inlet holes (14) and the centre of the tail row hole (16) being located on the same connecting line; the distance from the centre of each air inlet hole (14) in the first group of air inlet holes (141) to the centre of the tail row hole (16) is L3, and the ratio of L3 to L1 is in the range of 3 / 4-15 / 16; The second group of air inlet holes (142) has two air inlet holes (14); along the second direction, the distance from the center of each air inlet hole (14) in the second group of air inlet holes (142) to the center of the tail row hole (16) is L9, and the ratio of L9 to L1 is in the range of 3 / 4-7 / 8.
8. The furnace tube structure according to claim 6, characterized in that: Along the first direction, the first group of air inlet holes (141) and the second group of air inlet holes (142) are respectively arranged on both sides of the tail row holes (16), and the centers of the first group of air inlet holes (141) and the second group of air inlet holes (142) are both located on the same connecting line as the center of the tail row holes (16); The distance between the air inlet hole (14) closest to the center of the tail exhaust hole (16) in the first group of air inlet holes (141) and the center of the tail exhaust hole (16) is L6, the diameter of the furnace body (10) is L2, and the ratio of L6 to L2 is in the range of 1 / 8-1 / 4; The distance between two adjacent air inlet holes (14) in the first group of air inlet holes (141) and the second group of air inlet holes (142) is L5, and the ratio of L5 to L2 is in the range of 1 / 8-3 / 8.
9. A coating device, characterized in that: The invention comprises a coating chamber and a furnace tube structure as claimed in any one of claims 1 to 8 arranged in the coating chamber.
10. The coating device according to claim 9, characterized in that: The coating device further comprises a pulse air intake mechanism (70), the air outlet end of the pulse air intake mechanism (70) being connected to the air intake hole (14) of the furnace tube structure, and the pulse air intake mechanism (70) being used to introduce source-carrying gas into the furnace tube structure through the air intake hole (14).