Electrode structure of polycrystalline silicon reduction furnace

By using the matching design and flange structure of grooves and protrusions in the electrode structure of polysilicon reduction furnace, the problem of poor insulation effect between the electrode and the chassis is solved, the insulation reliability and equipment stability are improved, and the cost is reduced.

CN222293623UActive Publication Date: 2025-01-03HIMILE MECHANICAL MFG
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Patent Information

Application Number
CN202420248927.6
Authority / Receiving Office
CN · China
Patent Type
Utility models(China)
Current Assignee / Owner
Filing Date
2024-02-01
Publication Date
2025-01-03
Estimated Expiration
2034-02-01

AI Technical Summary

Technical Problem

The insulation effect between the electrode and the chassis of the existing polysilicon reduction furnace is poor, and arc discharge is prone to occur, resulting in circuit short circuits and equipment damage. Increasing the thickness of the insulation pad will reduce the tightening stability of the lock nut and increase the cost.

Method used

A polycrystalline silicon reduction furnace electrode structure is designed. By providing grooves on the insulating pad and a protrusion on the electrode holder or an insulating sleeve, the stability of the insulating pad and the electrode holder is increased, and the outer periphery of the insulating pad is increased. Multiple flanges are provided on the surface to increase creepage distance and avoid increasing the thickness of the insulation pad.

Benefits of technology

It improves the overall structural strength and insulation reliability of the electrode body, reduces production and maintenance costs, and enhances the safety of equipment operation and personnel.

✦ Generated by Eureka AI based on patent content.

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Abstract

The utility model discloses an electrode structure of a polycrystalline silicon reduction furnace, which belongs to the technical field of polycrystalline silicon production equipment and comprises an electrode body. The insulating sleeve is arranged on the electrode body in a sleeving manner; the electrode holder is arranged on the insulating sleeve in a sleeving manner; the insulation cushion block is arranged on the electrode body in a sleeving mode and abuts against the electrode base; the end face of the insulating cushion block is provided with a groove, the electrode holder and / or the insulating sleeve are / is provided with a protrusion, and the protrusion is embedded into the groove; at least two flanges arranged in the circumferential direction are arranged on the outer circumferential face of the insulating cushion block, and a gap is formed between every two adjacent flanges. According to the utility model, the groove on the insulating cushion block is matched with the bulge on the electrode holder or the insulating sleeve, so that the relative position between the insulating cushion block and the electrode holder is more stable during locking, and the mounting and the positioning are more convenient; the creepage distance can be increased by utilizing a plurality of flanges on the peripheral surface of the insulating cushion block; the overall structural strength and the insulation reliability of the electrode body can be improved without increasing the thickness of the insulation cushion block, and the production and maintenance cost is reduced.
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Description

Technical Field

[0001] The utility model relates to the technical field of polysilicon production equipment, in particular to an electrode structure of a polysilicon reduction furnace. Background Art

[0002] The modified Siemens method is the mainstream production process of polysilicon at this stage. The reduction furnace is the core production equipment of this process. The working principle of the reduction furnace is to heat the reduction furnace to the reaction temperature by energizing the high-temperature silicon core. The mixed gas of trichlorosilane and hydrogen undergoes a reduction reaction in a high-temperature environment, and the silicon produced by the reaction is chemically vapor deposited (CVD) onto the energized high-temperature silicon core.

[0003] In actual production, the reduction furnace is started with high voltage. The breakdown voltage of the silicon core is generally around 8000V, and sometimes as high as 12000V. Therefore, high voltage startup places higher requirements on the insulation performance between the electrode and the chassis. The insulation effect between the electrode and the bottom of the chassis of the existing reduction furnace is poor, and arc discharge is prone to occur between the electrode and the chassis, which will cause a short circuit, the silicon rod cannot grow, the chassis is damaged, and may even cause safety accidents. Figure 5 As shown, the common solution at this stage is to increase the thickness of the insulating spacer. Since the insulating spacer is usually made of PTFE material with a large expansion coefficient, as the thickness of the insulating spacer increases, on the one hand, the fastening stability of the locking nut will be reduced, causing the fastening pre-tightening force of the locking nut to fluctuate, and on the other hand, the length of the electrode body and the insulating sleeve will be increased, increasing the equipment cost. In addition, the increase in the thickness of the insulating spacer is difficult to significantly increase the creepage distance, and there are still hidden dangers in the insulation reliability.

[0004] Therefore, it is an urgent problem to be solved at this stage to develop and design a polysilicon reduction furnace electrode structure that can improve the fastening stability and increase the creepage distance without increasing the thickness of the insulating spacer, improve the insulation reliability of the electrode body, and reduce the production and maintenance costs. Utility Model Content

[0005] In response to the problems existing in the prior art, the utility model provides an electrode structure for a polysilicon reduction furnace, in which the groove on the insulating pad matches the protrusion on the electrode seat or the insulating sleeve, and the relative position between the insulating pad and the electrode seat is more stable when locked, and installation and positioning are also more convenient; at the same time, the creepage distance can be increased by utilizing multiple flanges on the outer peripheral surface of the insulating pad; the overall structural strength and insulation reliability of the electrode body can be improved without increasing the thickness of the insulating pad, thereby reducing production and maintenance costs.

[0006] In order to achieve the above purpose, the technical solution adopted by the utility model is as follows:

[0007] The utility model provides an electrode structure for a polysilicon reduction furnace, comprising:

[0008] Electrode body;

[0009] An insulating sleeve, wherein the insulating sleeve is sleeved on the electrode body;

[0010] An electrode seat, wherein the electrode seat is sleeved on the insulating sleeve;

[0011] An insulating spacer block is sleeved on the electrode body and abuts against the electrode seat; a groove is provided on the end face of the insulating spacer block, and a protrusion is provided on the electrode seat and / or the insulating sleeve, and the protrusion is embedded in the groove; at least two circumferentially arranged flanges are provided on the outer circumferential surface of the insulating spacer block, and there is a gap between adjacent flanges.

[0012] As a preferred technical solution, it comprises a chassis having a through hole; the electrode body, the insulating sleeve and the electrode seat all pass through the through hole.

[0013] As a preferred technical solution, the electrode body is provided with a locking nut threadedly connected thereto, and the insulating spacer is located between the electrode seat and the locking nut.

[0014] As a preferred technical solution, a gasket is provided between the insulating spacer and the locking nut.

[0015] As a preferred technical solution, the outer diameter of one end of the insulating spacer close to the gasket is larger than the outer diameter of the gasket;

[0016] And / or, the outer diameter of one end of the insulating spacer close to the electrode holder is larger than the outer diameter of one end of the electrode holder close to the insulating spacer;

[0017] And / or, the gasket includes a flat gasket and / or a spring gasket;

[0018] And / or, the electrode holder and the gasket are both made of conductive materials.

[0019] As a preferred technical solution, the protruding height of each flange is the same or different;

[0020] And / or, the surface of each flange has a smooth transition;

[0021] and / or, the maximum outer diameter of each flange is greater than the outer diameter of one end of the electrode holder close to the insulating spacer;

[0022] And / or, the creepage distance of the outer peripheral surface of the insulating spacer is not less than 250 mm.

[0023] As a preferred technical solution, the thickness of the insulating sleeve is not less than 4 mm.

[0024] As a preferred technical solution, the protrusion and the groove are loosely matched.

[0025] As a preferred technical solution, the protrusion is arranged on the lower end surface of the electrode seat; there is a gap between the insulating spacer and the electrode body, and the lower end of the insulating sleeve extends into the gap.

[0026] As a preferred technical solution, the protrusion is arranged on the lower end surface of the insulating sleeve; and there is a gap between the protrusion and the bottom surface of the groove.

[0027] The beneficial effects of the utility model are as follows:

[0028] The groove on the insulating gasket of the utility model matches the protrusion on the electrode seat or the insulating sleeve. When locking the insulating gasket, the protrusion is embedded in the groove, which can make the relative position between the insulating gasket and the electrode seat more stable, strengthen the fastening stability of the locking nut to the insulating gasket, and make installation and positioning more convenient. In addition, the structure of the groove and the protrusion can also increase the inner insulation distance of the insulating gasket, and the increase in the thickness of the insulating gasket will not lead to an increase in the length of the electrode body. At the same time, the creepage distance of the outer surface of the insulating gasket can be effectively increased by utilizing multiple flanges on the outer peripheral surface of the insulating gasket. There is no need to increase the thickness of the insulating gasket to improve the overall structural strength and insulation reliability of the electrode body, thereby improving the safety of equipment operation and personnel and reducing production and maintenance costs. BRIEF DESCRIPTION OF THE DRAWINGS

[0029] Figure 1 It is a schematic diagram of the overall structure of an embodiment of an electrode structure of a polysilicon reduction furnace of the utility model;

[0030] Figure 2 for Figure 1 A magnified image of area A;

[0031] Figure 3 It is a schematic diagram of the overall structure of another embodiment of an electrode structure of a polysilicon reduction furnace of the utility model;

[0032] Figure 4 for Figure 3 Enlarged view of area B;

[0033] Figure 5 Schematic diagram of the existing reduction furnace electrode structure.

[0034] In the figure: 1-electrode body, 11-locking nut, 2-insulating sleeve, 3-electrode holder, 4-insulating spacer, 41-groove, 42-flange, 5-protrusion, 6-chassis, 61-through hole, 7-gasket, 71-flat gasket, 72-spring gasket. DETAILED DESCRIPTION

[0035] In order to facilitate understanding by those skilled in the art, the present invention is further described below in conjunction with the accompanying drawings.

[0036] Embodiment 1

[0037] Please refer to Figure 1 and Figure 2 , is an embodiment of an electrode structure of a polysilicon reduction furnace provided by the utility model, comprising an electrode body 1, an insulating sleeve 2, an electrode seat 3 and an insulating pad 4; the insulating sleeve 2 is sleeved on the electrode body 1, the electrode seat 3 is sleeved on the insulating sleeve 2, and the insulating pad 4 is sleeved on the electrode body 1 and abuts against the electrode seat 3; the end surface of the insulating pad 4 is provided with a groove 41, and the lower end surface of the electrode seat 3 is provided with a protrusion 5. When the insulating pad 4 is locked, the protrusion 5 is embedded in the groove 41, which can make the relative position between the insulating pad 4 and the electrode seat 3 more stable, and the installation and positioning are more convenient. Under the premise of ensuring insulation, it will not increase The length of the electrode body 1 and the insulating sleeve 2 is increased; at the same time, two circumferentially arranged flanges 42 are provided on the outer peripheral surface of the insulating spacer 4, and there is a gap between the two flanges 42. The two flanges 42 make the outer peripheral surface of the insulating spacer 4 curved along its thickness direction, which can effectively increase the creepage distance and insulation reliability of the outer peripheral surface of the insulating spacer 4; the thickness of the insulating spacer 4 can be further shortened, which effectively reduces the fluctuation of the locking force of the locking nut 11 caused by the thermal expansion of the insulating spacer 4, and the insertion structure formed by the protrusion 5 and the groove 41 further improves the stability of the connection between the insulating spacer 4 and the electrode holder 3 and the electrode body 1.

[0038] In other embodiments, the number of flanges 42 may also be set to three or more, so as to effectively increase the creepage distance and insulation reliability of the outer peripheral surface of the insulating spacer 4 .

[0039] In this embodiment, please refer to Figure 1 and Figure 2 There is a gap between the insulating spacer 4 and the electrode body 1, and the lower end of the insulating sleeve 2 extends into the gap and has a gap with the gasket 7, which is convenient for installation. The insulating spacer 4 and the insulating sleeve 2 can effectively insulate the electrode holder 3 from the electrode body 1.

[0040] For clarification, please refer to Figure 1 and Figure 2The protrusion 5 and the groove 41 are loosely matched, which improves the insulation performance and facilitates the installation and positioning of the insulating spacer 4, and can effectively avoid interference fit caused by different thermal expansion coefficients of the protrusion 5 and the groove 41.

[0041] In this embodiment, please refer to Figure 1 The utility model also includes a chassis 6 having a through hole 61; the electrode body 1, the insulating sleeve 2 and the electrode holder 3 all pass through the through hole 61 and extend from the lower surface of the chassis 6, and the insulation between the electrode body 1 and the chassis 6 can be effectively achieved through the insulating sleeve 2 and the insulating pad 4.

[0042] Based on the above examples, please refer to Figure 1 and Figure 2 The electrode body 1 is provided with a locking nut 11 threadedly connected thereto, and the insulating spacer 4 is located between the electrode holder 3 and the locking nut 11. By tightening the locking nut 11, the insulating spacer 4 can be firmly pressed against the electrode holder 3; further, a gasket 7 is provided between the insulating spacer 4 and the locking nut 11, and the gasket 7 can effectively improve the fastening effect of the locking nut 11 on the insulating spacer 4.

[0043] For further information, please refer to Figure 1 and Figure 2 The outer diameter of the end of the insulating spacer 4 close to the gasket 7 should be larger than the outer diameter of the gasket 7. At the same time, the outer diameter of the end of the insulating spacer 4 close to the electrode holder 3 should be larger than the outer diameter of the end of the electrode holder 3 close to the insulating spacer 4. The insulating spacer 4 can effectively enhance the insulation capacity between the gasket 7 and the electrode holder 3.

[0044] For further information, please refer to Figure 1 and Figure 2 The gasket 7 includes a flat gasket 71 and a spring gasket 72. The flat gasket 71 and the spring gasket 72 are used together to effectively improve the locking effect of the locking nut 11 on the insulating gasket 4. In other embodiments, on the premise of ensuring the fastening effect on the insulating gasket 4, only the flat gasket 71 or the spring gasket 72 can be used.

[0045] It should be noted that the electrode holder 3 and the gasket 7 are both made of conductive materials.

[0046] In this embodiment, please refer to Figure 1 and Figure 2The maximum outer diameter of each flange 42 should be larger than the outer diameter of one end of the electrode holder 3 close to the insulating spacer 4, which can effectively increase the insulation distance and prevent arcing; further, the surfaces of the alternately arranged flanges 42 should have a smooth transition, and there should be no sharp corners on the surface of the flanges 42, which can reduce the risk of breakdown; specifically, the outer peripheral surface of the insulating spacer 4 forms a continuous curved surface along its thickness direction under the action of multiple flanges 42, and the creepage distance formed by the curved surface is not less than 250mm, which can effectively improve the insulation reliability of the outer peripheral surface of the insulating spacer 4.

[0047] It should be noted that the protruding height of each flange 42 can be the same or different, so as to ensure insulation and facilitate production and installation.

[0048] Embodiment 2

[0049] Please refer to Figure 3 and Figure 4 The main difference between this embodiment and the first embodiment is that: the protrusion 5 is arranged on the lower end surface of the insulating sleeve 2, and the protrusion 5 is embedded in the groove 41, so that the insulating spacer 4 and the insulating sleeve 2 can be positioned, and then the position of the insulating spacer 4 and the electrode holder 3 can be positioned, and at the same time, the insulation between the electrode holder 3 and the electrode body 1 can be ensured; further, when the insulating spacer 4 abuts against the electrode holder 3, there should be a gap between the protrusion 5 and the bottom surface of the groove 41, which can ensure the relative position stability between the insulating spacer 4 and the electrode holder 3.

[0050] In other embodiments, the electrode holder 3 and the lower end surface of the insulating sleeve 2 may also be provided with protrusions 5 at the same time, and the protrusions 5 are embedded in the grooves 41 to improve the overall structural strength and insulation reliability of the utility model.

[0051] It should be noted that in order to ensure the insulation effect, the thickness of the insulating sleeve 2 should not be less than 4 mm. At the same time, this thickness can also ensure that there is enough space on the end surface of the insulating sleeve 2 to set the protrusion 5 and ensure the structural strength of the protrusion 5.

[0052] The above description is only the preferred embodiment of the utility model, and is not intended to limit the utility model. For those skilled in the art, the utility model can have various modifications and changes. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the utility model shall be included in the protection scope of the utility model.

Claims

1. A polysilicon reduction furnace electrode structure, characterized in that: include: Electrode body (1); An insulating sleeve (2), the insulating sleeve (2) being sleeved on the electrode body (1); An electrode seat (3), wherein the electrode seat (3) is sleeved on the insulating sleeve (2); An insulating spacer (4), wherein the insulating spacer (4) is sleeved on the electrode body (1) and abuts against the electrode seat (3); a groove (41) is provided on the end face of the insulating spacer (4), and a protrusion (5) is provided on the electrode seat (3) and / or the insulating sleeve (2), and the protrusion (5) is embedded in the groove (41); at least two circumferentially arranged flanges (42) are provided on the outer peripheral surface of the insulating spacer (4), and there is a gap between adjacent flanges (42).

2. The electrode structure of a polysilicon reduction furnace according to claim 1, characterized in that: It comprises a chassis (6), the chassis (6) having a through hole (61); the electrode body (1), the insulating sleeve (2) and the electrode seat (3) all pass through the through hole (61).

3. The electrode structure of a polysilicon reduction furnace according to claim 1 or 2, characterized in that: The electrode body (1) is provided with a locking nut (11) threadedly connected thereto, and the insulating pad (4) is located between the electrode seat (3) and the locking nut (11).

4. The electrode structure of a polysilicon reduction furnace according to claim 3, characterized in that: A gasket (7) is provided between the insulating spacer (4) and the locking nut (11).

5. The electrode structure of a polysilicon reduction furnace according to claim 4, characterized in that: The outer diameter of one end of the insulating spacer (4) close to the gasket (7) is greater than the outer diameter of the gasket (7); And / or, the outer diameter of one end of the insulating spacer (4) close to the electrode holder (3) is greater than the outer diameter of one end of the electrode holder (3) close to the insulating spacer (4); And / or, the gasket (7) includes a flat gasket (71) and / or a spring gasket (72); And / or, the electrode holder (3) and the gasket (7) are both made of conductive materials.

6. The electrode structure of a polysilicon reduction furnace according to claim 1, characterized in that: The protruding height of each flange (42) is the same or different; And / or, the surface of each flange (42) has a smooth transition; and / or, the maximum outer diameter of each flange (42) is greater than the outer diameter of one end of the electrode holder (3) close to the insulating spacer (4); And / or, the creepage distance of the outer peripheral surface of the insulating spacer (4) is not less than 250 mm.

7. The electrode structure of a polysilicon reduction furnace according to claim 1, characterized in that: The thickness of the insulating sleeve (2) is not less than 4 mm.

8. The electrode structure of a polysilicon reduction furnace according to claim 1, characterized in that: The protrusion (5) and the groove (41) are clearance-matched.

9. The electrode structure of a polysilicon reduction furnace according to claim 1 or 8, characterized in that: The protrusion (5) is arranged on the lower end surface of the electrode seat (3); there is a gap between the insulating pad (4) and the electrode body (1), and the lower end of the insulating sleeve (2) extends into the gap.

10. The electrode structure of a polysilicon reduction furnace according to claim 1 or 8, characterized in that: The protrusion (5) is arranged on the lower end surface of the insulating sleeve (2); and there is a gap between the protrusion (5) and the bottom surface of the groove (41).