Semiconductor processing equipment

Abstract

The utility model discloses semiconductor processing equipment, which relates to the technical field of semiconductors and comprises a shell, a transmission assembly and an infrared temperature measuring device. The shell is provided with a transfer cavity and a plurality of functional cavities communicated with the transfer cavity, and a light-transmitting part is arranged on a wall body, where the transfer cavity is formed, of the shell; the conveying assembly is arranged in the transfer cavity, and the conveying assembly can move to convey the substrate between the multiple functional cavities and the transfer cavity; and the infrared temperature measuring device is arranged outside the shell, is opposite to the light transmitting part, and is used for detecting the temperature of the substrate through the light transmitting part when the substrate is positioned in the transfer cavity. According to the utility model, the infrared temperature measuring device is adopted to measure the temperature of the substrate, contact with the substrate is not needed, the measuring process is convenient and fast, direct induction of heat of the substrate is not needed, measurement hysteresis does not exist, and the temperature of the substrate can be detected in real time.

Description

Technical Field

[0001] The utility model relates to the technical field of semiconductors, in particular to semiconductor processing equipment. Background Art

[0002] In the semiconductor field, a large amount of vacuum processing equipment is needed to produce and process semiconductor products. Common vacuum processing equipment includes PVD equipment, CVD equipment, Dry Etch equipment, etc.

[0003] The temperature of some semiconductor products during some process steps is a very important parameter in the process operation, which will affect the qualified rate of semiconductor product production. In the related technology, traditional vacuum processing equipment uses thermocouple temperature measuring devices to measure the temperature of semiconductor products. The temperature measurement has hysteresis, which affects the accuracy of temperature measurement. Utility Model Content

[0004] The utility model aims to solve at least one of the technical problems existing in the prior art. To this end, the utility model provides a semiconductor processing device that can improve the accuracy of temperature measurement during the manufacturing process of semiconductor products.

[0005] According to a first aspect of the present invention, a semiconductor processing device is used to process a substrate. The semiconductor processing device includes:

[0006] A housing is provided with a transfer cavity and a plurality of functional cavities connected to the transfer cavity, and a light-transmitting portion is provided on a wall of the housing forming the transfer cavity;

[0007] A conveying assembly is disposed in the transfer chamber, and the conveying assembly is movable to convey the substrate between the plurality of functional chambers and the transfer chamber; and

[0008] The infrared temperature measuring device is arranged outside the shell and opposite to the light-transmitting portion. The infrared temperature measuring device is used to detect the temperature of the substrate through the light-transmitting portion when the substrate is located in the transfer cavity.

[0009] The semiconductor processing equipment according to the embodiment of the utility model has at least the following beneficial effects:

[0010] The temperature of the substrate is measured by using an infrared temperature measuring device. The infrared temperature measuring device is a radiation temperature measuring device and does not need to contact the substrate. The measurement process is convenient and quick. Compared with the use of contact temperature measuring devices such as thermocouples to measure the substrate, the infrared temperature measuring device only needs to receive the infrared radiation radiated by the substrate. It does not need to directly sense the heat of the substrate, there is no measurement lag, and the temperature of the substrate can be detected in real time.

[0011] The substrate is also transferred from the process chamber to the transfer chamber by the transfer assembly, and the temperature of the substrate is detected by the infrared temperature measuring device through the light-transmitting portion, so that the temperature of the substrate is measured in the transfer chamber. There is no need to set up an infrared temperature measuring device separately in each process chamber, which can reduce the number of infrared temperature measuring devices and thus reduce the production cost of semiconductor processing equipment.

[0012] According to some embodiments of the present invention, the transmittance of the light-transmitting portion to infrared light is greater than or equal to 90%.

[0013] According to some embodiments of the present invention, the light-transmitting portion is made of glass.

[0014] According to some embodiments of the utility model, the semiconductor processing equipment also includes a host computer, which is electrically connected to the infrared temperature measuring device, and is used to receive temperature data T1 detected by the infrared temperature measuring device. The host computer is set with a calibration coefficient A, and the host computer is used to calculate the actual temperature T2 of the substrate based on the temperature data T1; the actual temperature T2 of the substrate is: T2=A*T1.

[0015] According to some embodiments of the present invention, the semiconductor processing equipment further comprises a light shield, which is connected to the outside of the shell and covers the infrared temperature measuring device and the light-transmitting portion.

[0016] According to some embodiments of the present invention, a plurality of the functional chambers are arranged around the outer side of the transfer chamber.

[0017] According to some embodiments of the present utility model, a plurality of transfer stations corresponding to the plurality of functional chambers are arranged in the transfer chamber; the transmission assembly comprises:

[0018] A material picking portion, used for picking up the substrate;

[0019] A moving mechanism connected to the material taking part, the moving mechanism is used to drive the material taking part to move; and

[0020] The first rotating mechanism is connected to the moving mechanism, and is used to drive the moving mechanism to rotate, so as to drive the material taking part to rotate and switch between the plurality of transfer stations.

[0021] According to some embodiments of the present invention, the conveying assembly further includes a second rotating mechanism, which is disposed on the moving mechanism and connected to the material picking portion, and is used to drive the material picking portion to rotate, thereby driving the substrate to rotate.

[0022] According to some embodiments of the present invention, the conveying component is a robot.

[0023] According to some embodiments of the present invention, the semiconductor processing equipment further includes:

[0024] a first negative pressure component, the first negative pressure component is connected to the transfer chamber, and the first negative pressure component is used to evacuate the transfer chamber; and

[0025] A plurality of second negative pressure components are connected one-to-one with the plurality of functional chambers, and each of the second negative pressure components is used for evacuating the functional chamber connected thereto.

[0026] Additional aspects and advantages of the present invention will be given in part in the following description, and in part will become apparent from the following description, or will be learned through the practice of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0027] The present invention is further described below with reference to the accompanying drawings and embodiments, wherein:

[0028] Figure 1 A schematic diagram of the structure of a semiconductor processing device according to an embodiment of the utility model;

[0029] Figure 2 It is a partial assembly diagram of the infrared temperature measuring device and the light-transmitting part of the first embodiment of the utility model;

[0030] Figure 3 It is a partial assembly diagram of the infrared temperature measuring device and the light-transmitting part of the second embodiment of the utility model;

[0031] Figure 4 It is a partial assembly diagram of the infrared measuring device and the light-transmitting part of the third embodiment of the utility model;

[0032] Figure 5 It is a structural schematic diagram of a conveying assembly of a semiconductor processing equipment according to an embodiment of the utility model;

[0033] Figure 6 It is a schematic diagram of the assembly of the housing and negative pressure component of the semiconductor processing equipment according to an embodiment of the utility model.

[0034] Figure Number:

[0035] Semiconductor processing equipment 10;

[0036] Shell 100; first shell 110; transfer cavity 110a; light-transmitting portion 111; second shell 120; functional cavity 120a;

[0037] Conveying assembly 200; material taking part 210; moving mechanism 220; first rotating mechanism 230; second rotating mechanism 240;

[0038] Infrared temperature measuring device 300 ; light shield 400 ; first negative pressure assembly 500 ; second negative pressure assembly 600 ; substrate 20 . DETAILED DESCRIPTION

[0039] The embodiments of the present invention are described in detail below, and examples of the embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals throughout represent the same or similar elements or elements having the same or similar functions. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain the present invention, and cannot be understood as limiting the present invention.

[0040] In the description of the present invention, it should be understood that the descriptions involving orientation, such as the orientation or positional relationship indicated as up, down, etc., are based on the orientation or positional relationship shown in the drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present invention.

[0041] In the description of the present utility model, "a plurality" means more than two. If there is a description of "first" or "second", it is only for the purpose of distinguishing the technical features, and cannot be understood as indicating or implying the relative importance or implicitly indicating the number of the indicated technical features or implicitly indicating the order of the indicated technical features.

[0042] In the description of the present invention, unless otherwise clearly defined, terms such as setting, installing, connecting, etc. should be understood in a broad sense, and technicians in the relevant technical field can reasonably determine the specific meanings of the above terms in the present invention based on the specific content of the technical solution.

[0043] The present application provides a semiconductor processing equipment.

[0044] Specifically, the semiconductor processing equipment provided by the present application is used to process a substrate, where the substrate refers to a semiconductor substrate, for example, a silicon substrate. The semiconductor processing equipment may be a PVD device (physical vapor deposition equipment), a CVD device (chemical vapor deposition equipment), or a Dry Etch device (etching equipment).

[0045] Please refer to Figure 1 , Figure 1 Schematic diagram of the structure of a semiconductor processing device according to an embodiment of the present utility model. In the embodiment of the present application, the semiconductor processing device 10 includes a housing 100, a transmission assembly 200 and an infrared temperature measuring device 300.

[0046] The housing 100 is used to form the outer contour of the main body of the semiconductor processing equipment 10, so that some electric control equipment, operating mechanisms, functional devices, etc. of the semiconductor processing equipment 10 are sealed and arranged inside the housing 100, and the housing 100 is used to provide positioning, support and bearing functions for these electric control equipment, operating mechanisms and functional devices, etc. It can be understood that the housing 100 is also used to form a space for the substrate 20 to perform various process operations. For example, multiple process spaces can be set in the housing 100, so that the substrate 20 performs different process operations in different process spaces.

[0047] like Figure 1 As shown, a plurality of functional chambers 120a are provided in the housing 100. For example, the functional chamber 120a may include a feed chamber, a discharge chamber, and a plurality of process chambers. The feed chamber may be connected to an upstream production line so that the substrate 20 produced by the upstream production line can be directly transferred to the feed chamber. The discharge chamber is used to output the substrate 20 that has completed the process operation so that the substrate 20 enters the next production process. The process chamber is configured to perform various process operations of the substrate 20, and the process chamber may include, for example, a thin film deposition chamber, a thin film etching chamber, and the like.

[0048] It is understandable that semiconductor processing has high requirements for the working environment. In order to ensure the processing accuracy of the substrate 20 and ensure that each process step of the substrate 20 is qualified, each functional cavity 120a of the shell 100 needs to be set to a vacuum environment, that is, each functional cavity 120a is a vacuum cavity.

[0049] In order to transfer the substrate 20 from outside the housing 100 into the vacuum environment and facilitate the transfer of the substrate 20 between multiple process chambers, the housing 100 may also be provided with a transfer chamber 110a, which is connected to each functional chamber 120a. It can be understood that the transfer chamber 110a is also configured as a vacuum chamber.

[0050] Among them, a vacuum valve (not shown in the figure) is provided at the connection between each functional chamber 120a and the transfer chamber 110a, and each vacuum valve is used to control the connection or isolation between the corresponding functional chamber 120a and the transfer chamber 110a. For example, in the process of transferring the substrate 20 to the semiconductor processing equipment 10, the vacuum valve of the feed chamber and the transfer chamber 110a are first closed. After the substrate 20 enters the feed chamber, the feed chamber is closed and evacuated, and then the vacuum valve of the feed chamber is opened to connect the feed chamber with the transfer chamber 110a. At this time, the substrate 20 can be transferred to the transfer chamber 110a to prevent the ambient air outside the shell 100 from entering the transfer chamber 110a.

[0051] The transfer assembly 200 is disposed in the transfer chamber 110a, and the transfer assembly 200 can move to transfer the substrate 20 between the plurality of functional chambers 120a and the transfer chamber 110a. For example, after the substrate 20 enters the feed chamber from the outside of the housing 100, the transfer assembly 200 first transfers the substrate 20 from the feed chamber to the transfer chamber 110a, and then sequentially transfers the substrate 20 to the corresponding process chambers for different process operations according to the processing steps.

[0052] It can be understood that when not in use, the entire transfer assembly 200 is located in the transfer chamber 110a; during use, at least a portion of the transfer assembly 200 can move into the functional chamber 120a, thereby transferring the substrate 20 from the transfer chamber 110a to the functional chamber 120a, or transferring the substrate 20 from the functional chamber 120a to the transfer chamber 110a.

[0053] The temperature of the substrate 20 is a key parameter of some process steps. To ensure the smooth completion of related process operations, the temperature of the substrate 20 needs to be monitored after some process steps to ensure that the substrate 20 performs the process operation within a suitable temperature range.

[0054] Any heat-generating object will continuously emit infrared radiation. By detecting the infrared radiation of the heat-generating object, the temperature of the heat-generating object can be determined. In this regard, the present application sets up an infrared temperature measuring device 300 to detect the temperature of the substrate 20. The infrared temperature measuring device 300 can be an infrared temperature measuring sensor.

[0055] Then, the embodiment of the present application adopts an infrared temperature measuring device 300 to measure the temperature of the substrate 20. The infrared temperature measuring device 300 is a radiation temperature measurement and does not need to contact the substrate 20. The measurement process is convenient and fast. Compared with using contact temperature measuring devices such as thermocouples to measure the substrate 20, the infrared temperature measuring device 300 only needs to receive the infrared rays radiated by the substrate 20. There is no need to directly sense the heat of the substrate 20, there is no measurement lag, and the temperature of the substrate 20 can be detected in real time.

[0056] In order to give full play to the radiation temperature measurement performance of the infrared temperature measurement device 300 , in the embodiment of the present application, the infrared temperature measurement device 300 is disposed outside the housing 100 .

[0057] By arranging the infrared temperature measuring device 300 outside the housing 100, it is convenient to maintain the infrared temperature measuring device 300. When the service life of the infrared temperature measuring device 300 reaches the specified number of years (or when the infrared temperature measuring device 300 fails), the infrared temperature measuring device 300 can be directly disassembled and replaced outside the housing 100 without disassembling the housing 100, which is convenient for maintenance. In addition, the temperature of the substrate 20 is very high during some process operations. The infrared temperature measuring device 300 is arranged outside the housing 100 and will not be burned by the heat generated by the substrate 20, thus avoiding damage to the infrared temperature measuring device 300 caused by excessive temperature, and can increase the service life of the infrared temperature measuring device 300.

[0058] In order to realize that the infrared temperature measuring device 300 can detect the temperature of the substrate 20 outside the housing 100, please combine Figure 1 And refer to Figure 2 , Figure 2 The infrared temperature measuring device and the light-transmitting portion of the first embodiment of the utility model are partially assembled. The light-transmitting portion 111 is provided on the wall of the housing 100 forming the transfer cavity 110a. The infrared temperature measuring device 300 is provided outside the housing 100 and opposite to the light-transmitting portion 111. The infrared temperature measuring device 300 is used to detect the temperature of the substrate 20 through the light-transmitting portion 111 when the substrate 20 is located in the transfer cavity 110a.

[0059] The light-transmitting portion 111 is disposed on the wall of the housing 100 forming the transfer cavity 110a, that is, the light-transmitting portion 111 is opposite to the space where the transfer cavity 110a is located, so when the substrate 20 is located in the transfer cavity 110a, the infrared rays radiated by the substrate 20 can pass through the light-transmitting portion 111 and be emitted to the outside of the housing 100, so as to be received by the infrared temperature measuring device 300, thereby realizing the temperature measurement of the substrate 20. Specifically, when performing temperature measurement, the substrate 20 needs to be transported and moved by the transport component 200 to face the light-transmitting portion 111, so that the infrared rays radiated by the substrate 20 directly pass through the light-transmitting portion 111.

[0060] It should be noted that the substrate 20 is transferred from the process chamber to the transfer chamber 110a for temperature measurement by the transfer assembly 200. Since the temperature of the substrate 20 drops very slowly under a vacuum environment and the infrared temperature measuring device 300 measures the temperature very quickly, the time from the completion of the process operation of the substrate 20 to the temperature measurement can be less than 10 seconds. Therefore, there is no need to consider the temperature loss of the substrate 20 during the transmission process from the process chamber to the transfer chamber 110a.

[0061] Then, the embodiment of the present application transfers the substrate 20 from the process chamber to the transfer chamber 110a through the transfer assembly 200, and detects the temperature of the substrate 20 through the light-transmitting portion 111 by the infrared temperature measuring device 300, so that the temperature of the substrate 20 is measured in the transfer chamber 110a, and there is no need to set up an infrared temperature measuring device 300 in each process chamber, which can reduce the number of infrared temperature measuring devices 300, thereby reducing the production cost of the semiconductor processing equipment 10. In other words, the embodiment of the present application provides a semiconductor processing equipment 10 that can detect the temperature of the substrate 20 and is low-cost.

[0062] In order to improve the accuracy of measuring the temperature of the substrate 20 , in one embodiment, the infrared transmittance of the light-transmitting portion 111 is greater than or equal to 90%.

[0063] The infrared transmittance of the light-transmitting portion 111 is greater than or equal to 90%, and the light-transmitting portion 111 is highly transparent in the infrared spectrum and has a very high penetrating effect on infrared rays, so that the infrared measuring device can receive more infrared rays radiated by the substrate 20, thereby improving the accuracy and reliability of the infrared temperature measuring device 300 in measuring the temperature of the substrate 20.

[0064] Furthermore, in one embodiment, the transmittance of the light-transmitting portion 111 to infrared rays with a wavelength in the range of 5 um to 20 um is greater than or equal to 90%.

[0065] Exemplarily, the material used to make the light-transmitting portion 111 may be chrysanthemum glass, which can meet the above-mentioned light-transmitting requirements of the light-transmitting portion 111 and achieve high transmittance for infrared rays.

[0066] In one embodiment, the semiconductor processing equipment 10 may further include a host computer (not shown in the figure), which is electrically connected to the infrared temperature measuring device 300 and is used to receive temperature data detected by the infrared detection device to calculate the actual temperature of the substrate 20 according to the temperature data. The host computer may be an industrial computer.

[0067] It can be understood that since the infrared temperature measuring device 300 detects the temperature of the substrate 20 through the light-transmitting portion 111, it is difficult for the light-transmitting portion 111 to ensure that the infrared rays radiated by the substrate 20 can be 100% transmitted. Therefore, there will be a small deviation between the temperature value detected by the infrared temperature measuring device 300 and the actual temperature of the substrate 20. Of course, this deviation is relatively small, and can be calculated by setting a calibration coefficient (or compensation coefficient) based on the detected temperature data and the calibration coefficient. The calculated temperature value is approximately the actual temperature of the substrate 20.

[0068] Exemplarily, the upper computer is set with a calibration coefficient A, defines the temperature data of the substrate 20 detected by the infrared temperature measuring device 300 as T1, and defines the actual temperature of the substrate 20 as T2, then the actual temperature of the substrate 20 T2 = A*T1.

[0069] Before the semiconductor processing equipment 10 is used for the first time, it must be tested to obtain a more accurate calibration coefficient. Specifically, during the test, the infrared temperature measuring device 300 is first used to directly measure the temperature of a heating object, and the measured temperature value is T3. Then, the heating object maintained at this temperature is immediately placed in the transfer chamber 110a of the semiconductor processing equipment 10, and the infrared temperature measuring device 300 detects the temperature of the heating object through the light-transmitting portion 111. If the temperature is T4, the calibration coefficient can be obtained based on T3 and T4, and the calibration coefficient A=T3 / T4. It can be understood that in order to ensure the accuracy of the calibration coefficient, multiple tests can be performed to obtain a more accurate calibration coefficient based on multiple test results.

[0070] Then, during the process operation of the substrate 20, the conveying component 200 transfers the substrate 20 that has just completed a certain process step from the corresponding process chamber to the transfer chamber 110a, so that the substrate 20 moves to be opposite to the infrared temperature measuring device 300 (or a certain temperature measuring point on the substrate 20 moves to be opposite to the infrared temperature measuring device 300), and the infrared rays excited on the substrate 20 are received by the infrared temperature measuring device 300 through the light-transmitting portion 111. The temperature detected by the infrared temperature measuring device 300 is T1, and the infrared temperature measuring device 300 sends the temperature data to the host computer. The host computer calculates the actual temperature of the substrate 20 according to the above-mentioned calibration coefficient A as T2=A*T1.

[0071] In this way, the actual temperature value of the substrate 20 is calculated by setting the calibration coefficient, and the influence of the light-transmitting portion 111 on the infrared radiation is eliminated, so that the accuracy and reliability of the temperature detection of the substrate 20 can be improved.

[0072] In some optional implementations, in order to further ensure the accuracy of the temperature measurement of the substrate 20, multiple infrared temperature measuring devices 300 may also be provided.

[0073] For example, please refer to Figure 3 , Figure 3 The infrared temperature measuring device and the light-transmitting portion of the second embodiment of the utility model are partially assembled. In one embodiment, the number of the infrared temperature measuring devices 300 is two, and the two infrared temperature measuring devices 300 are arranged at intervals, and the two infrared temperature measuring devices 300 are respectively opposite to the light-transmitting portion 111.

[0074] By setting up two infrared measuring devices, the two infrared temperature measuring devices 300 simultaneously detect the temperature of the substrate 20. When the two temperature values ​​detected by the two infrared temperature measuring devices 300 are not much different, for example, when the deviation of the two temperature values ​​is less than or equal to the preset temperature threshold, it indicates that the two infrared temperature measuring devices 300 are in a normal state, thereby obtaining similar detection results. If the temperature values ​​detected by the two infrared temperature measuring devices 300 are greatly different, for example, the deviation of the two temperature values ​​is greater than the above-mentioned preset threshold, it means that one of the infrared temperature measuring sensors is faulty or damaged, and the infrared temperature measuring device 300 needs to be checked and replaced.

[0075] Then, by setting up two infrared temperature measuring devices 300, the status of the infrared temperature measuring device 300 can be checked according to the temperature data detected by the two infrared detection devices respectively, so as to avoid the situation where the abnormality of the infrared temperature measuring device 300 is not discovered in time and the detected temperature data is inaccurate, and the accuracy and reliability of temperature measurement can be improved.

[0076] Optional, please refer to Figure 4 , Figure 4 The third embodiment of the present invention is a partial assembly diagram of the infrared measuring device and the light-transmitting portion. In one embodiment, the semiconductor processing equipment 10 further includes a light shield 400 , which is connected to the outside of the housing 100 and covers the infrared temperature measuring device 300 and the light-transmitting portion 111 .

[0077] It can be understood that the shading hood 400 is made of opaque material, or the shading hood 400 is made of material that blocks infrared light, so as to prevent infrared light in the external environment of the shell 100 from irradiating the infrared temperature measuring device 300, being received by the infrared temperature measuring device 300 and interfering with its temperature measurement of the substrate 20, thereby avoiding affecting the accuracy and reliability of the temperature measurement of the substrate 20.

[0078] Moreover, the shading cover 400 covers the infrared temperature measuring device 300 and the light-transmitting portion 111, and the infrared temperature measuring device 300 and the light-transmitting portion 111 can be covered in a closed environment formed by the shading cover 400, which can prevent dust and impurities in the environment outside the shell 100 from accumulating on the surface of the light-transmitting portion 111, avoiding affecting the penetration of infrared rays radiated by the substrate 20.

[0079] The light shield 400 adopts a quick-release connection design to facilitate subsequent maintenance of the infrared temperature measuring device 300 .

[0080] Optional, please continue to refer to Figure 1 , multiple functional chambers 120a are arranged around the outside of the transfer chamber 110a.

[0081] By surrounding a plurality of functional chambers 120a in the transfer chamber 110a, the transfer assembly 200 can be configured to rotate to realize the transfer and switching of the substrate 20 between the plurality of functional chambers 120a, thereby reducing the transfer path of the transfer assembly 200 for the substrate 20, so that the transfer assembly 200 as a whole does not need to be set larger, thereby reducing the overall volume of the semiconductor processing equipment 10.

[0082] like Figure 1 As shown, in one embodiment, the shell 100 includes a first shell 110 forming a transfer cavity 110a, and multiple second shells 120 forming multiple functional cavities 120a. The overall design of the first shell 110 is polygonal, as shown in the figure using a heptagon as an example. The first shell 110 has multiple side surfaces, and the second shell 120 can be respectively connected to the multiple side surfaces of the first shell 110.

[0083] In one embodiment, please refer to Figure 5 , Figure 5 The structure diagram of the conveying assembly of the semiconductor processing equipment of the embodiment of the utility model is shown in FIG.

[0084] The material taking portion 210 is used to grab or support the substrate 20 .

[0085] For example, the material taking part 210 may be an electric clamp, which clamps the upper and lower surfaces of the substrate 20. The material taking part 210 may also be a tray, which is used to support one side of the substrate 20. The specific structure of the material taking part 210 is not limited here.

[0086] The transfer chamber 110a is provided with a plurality of transfer stations opposite to the plurality of functional chambers 120a. The moving mechanism 220 is connected to the material taking part 210, and the moving mechanism 220 is used to drive the material taking part 210 to move. The first rotating mechanism 230 is connected to the moving mechanism 220, and the first rotating mechanism 230 is used to drive the moving mechanism 220 to rotate, so as to drive the material taking part 210 to rotate and switch between the plurality of transfer stations.

[0087] The moving mechanism 220 may be a telescopic moving mechanism, and the first rotating mechanism 230 may be a first motor.

[0088] Specifically, taking the example of the conveying assembly 200 transferring the substrate 20 from the feed chamber to one of the process chambers, the moving mechanism 220 first drives the pick-up portion 210 to move into the feed chamber, and the pick-up portion 210 grabs the substrate 20 in the feed chamber, and then the moving mechanism 220 drives the pick-up portion 210 to move back to the initial position in the transfer chamber 110a, and then the first rotating mechanism 230 drives the moving mechanism 220 and the pick-up portion 210 to rotate as a whole, so that the pick-up portion 210 moves from the feed chamber to the transfer chamber 110a. The transfer station opposite to the material chamber rotates to the transfer station opposite to one of the process chambers. After the vacuum valve of the process chamber is opened, the moving mechanism 220 drives the material taking part 210 to move into the process chamber, and releases the substrate 20 on the substrate table of the process chamber through the material taking part 210. Then the moving mechanism 220 drives the material taking part 210 to move again, so that the material taking part 210 comes out of the process chamber and returns to the transfer station opposite to the process chamber, thereby realizing the transfer of the substrate 20.

[0089] Furthermore, the conveying assembly 200 may further include a second rotating mechanism 240 , which is disposed on the moving mechanism 220 and connected to the material taking portion 210 , and is used to drive the material taking portion 210 to rotate so as to drive the substrate 20 to rotate.

[0090] That is to say, the moving mechanism 220 is indirectly connected to the material taking part 210 through the second rotating mechanism 240 .

[0091] The present embodiment also provides a second rotating mechanism 240, which can more conveniently control the rotation of the substrate 20. When it is necessary to measure the temperature of different points on the substrate 20, the second rotating mechanism 240 can drive the material picking portion 210 to rotate, thereby driving the substrate 20 to rotate, so that the different temperature measurement points on the substrate 20 that need to be measured are rotated to be opposite to the light-transmitting portion 111, thereby realizing temperature measurement of different points on the substrate 20.

[0092] Optionally, in another embodiment, the transport component 200 may also be a robot.

[0093] Please refer to Figure 6 , Figure 6 The schematic diagram of the assembly of the housing and the negative pressure assembly of the semiconductor processing equipment of the embodiment of the utility model. The semiconductor processing equipment 10 also includes a first negative pressure assembly 500, which is connected to the transfer chamber 110a and is used to evacuate the transfer chamber 110a. The first negative pressure assembly 500 can be a vacuum pump assembly.

[0094] The semiconductor processing equipment 10 further includes a second negative pressure assembly 600. A plurality of second negative pressure assemblies 600 are connected one-to-one with a plurality of functional chambers 120a. Each second negative pressure assembly 600 is used to evacuate the connected functional chamber 120a. The second negative pressure assembly 600 may also be a vacuum pump assembly.

[0095] The embodiments of the present invention are described in detail above in conjunction with the accompanying drawings, but the present invention is not limited to the above embodiments, and various changes can be made within the knowledge scope of ordinary technicians in the relevant technical field without departing from the purpose of the present invention.

Claims

1. Semiconductor processing equipment, characterized in that Used to process a substrate, the semiconductor processing equipment comprises: A housing is provided with a transfer cavity and a plurality of functional cavities connected to the transfer cavity, and a light-transmitting portion is provided on a wall of the housing forming the transfer cavity; A conveying assembly is disposed in the transfer chamber, and the conveying assembly is movable to convey the substrate between the plurality of functional chambers and the transfer chamber; and The infrared temperature measuring device is arranged outside the shell and opposite to the light-transmitting portion. The infrared temperature measuring device is used to detect the temperature of the substrate through the light-transmitting portion when the substrate is located in the transfer cavity.

2. The semiconductor processing equipment according to claim 1, characterized in that The transmittance of the light-transmitting portion to infrared light is greater than or equal to 90%.

3. The semiconductor processing equipment according to claim 2, characterized in that: The material of the light-transmitting portion is glass.

4. The semiconductor processing equipment according to claim 3, characterized in that: The semiconductor processing equipment also includes a host computer, which is electrically connected to the infrared temperature measuring device. The host computer is used to receive temperature data T1 detected by the infrared temperature measuring device. The host computer is set with a calibration coefficient A. The host computer is used to calculate the actual temperature T2 of the substrate based on the temperature data T1; the actual temperature T2 of the substrate is: T2=A*T1.

5. The semiconductor processing equipment according to any one of claims 1 to 4, characterized in that: The semiconductor processing equipment further comprises a light shield, which is connected to the outside of the housing and covers the infrared temperature measuring device and the light-transmitting portion.

6. The semiconductor processing equipment according to any one of claims 1 to 4, characterized in that: A plurality of the functional chambers are arranged around the outer side of the transfer chamber.

7. The semiconductor processing equipment according to any one of claims 1 to 4, characterized in that: The transfer chamber is provided with a plurality of transfer stations corresponding to the plurality of functional chambers; the transmission assembly comprises: A material picking portion, used for picking up the substrate; A moving mechanism connected to the material taking part, the moving mechanism is used to drive the material taking part to move; and The first rotating mechanism is connected to the moving mechanism, and is used to drive the moving mechanism to rotate, so as to drive the material taking part to rotate and switch between the plurality of transfer stations.

8. The semiconductor processing equipment according to claim 7, characterized in that: The conveying assembly further includes a second rotating mechanism, which is disposed on the moving mechanism and connected to the material taking part, and is used to drive the material taking part to rotate, so as to drive the substrate to rotate.

9. The semiconductor processing equipment according to any one of claims 1 to 4, characterized in that: The conveying component is a robot.

10. The semiconductor processing equipment according to any one of claims 1 to 4, characterized in that: The semiconductor processing equipment further comprises: a first negative pressure component, the first negative pressure component is connected to the transfer chamber, and the first negative pressure component is used to evacuate the transfer chamber; and A plurality of second negative pressure components are connected one-to-one with the plurality of functional chambers, and each of the second negative pressure components is used for evacuating the functional chamber connected thereto.

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