Uniform temperature flow channel structure of silicon IGBT and silicon carbide SBD diode hybrid power module
By adopting a hybrid structure and a temperature uniform runner design of silicon IGBT and silicon carbide SBD diodes in the power module, the problem of poor heat dissipation effect of the power module is solved, more uniform heat dissipation and reduce temperature difference are achieved, and the overall performance of the module is improved.
Patent Information
- Application Number
- CN202421069765.6
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-05-16
- Publication Date
- 2025-01-03
- Estimated Expiration
- 2034-05-16
AI Technical Summary
The heat dissipation effect of existing power modules is poor, resulting in large chip temperature difference, and high loss of submodules of IGBT power modules, and significant thermal coupling impact.
The temperature uniform runner structure of the mixed power module of silicon IGBT and silicon carbide SBD diode is adopted. By setting a heat dissipation water channel and wing needle on the heat dissipation base plate, the heat dissipation effect is gradually enhanced by the height changes of small, medium and large bosses, combined with silicon carbide SBD The low loss and single-shaped arrangement of diode chips reduce the impact of thermal coupling.
It effectively reduces the temperature difference between power modules, improves the overall heat dissipation effect, reduces the impact of thermal coupling, and improves the output electrical performance of the module.
Smart Images
Figure CN222300664U_ABST
Abstract
Description
Technical Field
[0001] The utility model relates to the technical field of heat dissipation of power modules, in particular to a temperature-averaging flow channel structure of a hybrid power module of a silicon IGBT and a silicon carbide SBD diode. Background Art
[0002] The power module is a power electronic device that is combined with certain functions and then encapsulated into a module. With the rapid development of modern science and technology, the market demand for power modules is increasing rapidly, and the heat dissipation effect of the power module will affect the use of the module, so the heat dissipation problem of the power module has become a top priority. For example, Chinese patent CN201721513164.X discloses an IGBT power module and a power module comprising it, which includes a plurality of IGBT power module submodules and two cooling substrates, and the plurality of IGBT power module submodules are arranged along the length direction of the cooling substrate at a predetermined interval and encapsulated between the two cooling substrates through a package body, and the cooling substrate includes a first cooling substrate and a second cooling substrate, and the first cooling substrate and the second cooling substrate are formed with a cooling portion consisting of a plurality of protrusions on the surface that does not contact the IGBT power module submodule, and the first cooling substrate and the second cooling substrate are respectively provided with openings at both ends that are interconnected to form a first water guide port and a second water guide port respectively. The module reduces the risk of overheating failure and improves the output electrical performance of the power module through uniform contact between the coolant and the wing pins. However, since the coolant enters from the inlet and undergoes heat exchange, the temperature of the coolant rises near the outlet, which reduces the heat dissipation effect, resulting in a large temperature difference of the chips on the module. In addition, the IGBT power module submodule has a large loss, and the impact of thermal coupling is relatively large. Utility Model Content
[0003] In view of this, the utility model provides a temperature-averaging flow channel structure of a hybrid power module of a silicon IGBT and a silicon carbide SBD diode to solve the above problems.
[0004] A temperature-averaging flow channel structure for a hybrid power module of silicon IGBT and silicon carbide SBD diodes, comprising a heat dissipation base plate, a heat dissipation water channel arranged on the heat dissipation base plate, and a plurality of power modules arranged on the heat dissipation base plate. A plurality of heat dissipation fins are arranged at intervals on one side of the heat dissipation base plate facing the heat dissipation water channel. The heat dissipation water channel comprises a body, a first partition arranged on the body, a second partition arranged on one side of the first partition, and a third partition arranged on one side of the second partition. At least four small bosses are arranged at intervals on the first partition, at least two medium bosses are arranged at intervals on the second partition, and at least two large bosses are arranged at intervals on the third partition. The height of the large boss is greater than the height of the medium boss, and the height of the medium boss is greater than the height of the small boss. The upper and lower bridges in the power module are respectively arranged in parallel in a straight line with three silicon IGBT chips and twelve silicon carbide SBD diode chips.
[0005] Furthermore, the heat dissipation fin pins are in the shape of a cylinder or an elliptical cylinder structure.
[0006] Furthermore, a plurality of the heat dissipation fins are distributed in three regions, namely a first region, a second region, and a third region.
[0007] Furthermore, the first area is close to a coolant inlet position, and the third area is close to a coolant outlet position.
[0008] Furthermore, the height of some of the heat dissipating fins gradually decreases from the first area toward the third area.
[0009] Further, the heat dissipation fins in the first area are located in the first partition, the heat dissipation fins in the second area are located in the second partition, and the heat dissipation fins in the third area are located in the third partition.
[0010] Compared with the prior art, the temperature-averaging flow channel structure of the hybrid power module of silicon IGBT and silicon carbide SBD diode provided by the utility model adopts the silicon carbide SBD diode chip, which has lower loss than the FRD diode, and the chips are arranged in a straight line, which greatly reduces the influence of thermal coupling, thereby reducing the overall junction temperature of the module. The heights of the small, medium and large bosses increase from low to high with the flow direction of the coolant, so that the heat dissipation effect at the first, second and third partitions is gradually enhanced, thus compensating for the influence of the coolant after heat exchange, thereby reducing the temperature difference between each of the power modules. BRIEF DESCRIPTION OF THE DRAWINGS
[0011] Figure 1 The present invention provides a schematic structural diagram of a temperature-averaging flow channel structure for a hybrid power module of a silicon IGBT and a silicon carbide SBD diode.
[0012] Figure 2 for Figure 1 Schematic diagram of the structure of the heat dissipation base plate of the temperature-averaging flow channel structure of the silicon IGBT and silicon carbide SBD diode hybrid power module.
[0013] Figure 3 for Figure 1 Schematic diagram of the structure of the heat dissipation channel of the temperature-averaging flow channel structure of the silicon IGBT and silicon carbide SBD diode hybrid power module.
[0014] Figure 4 for Figure 1 Schematic diagram of the cross-section of the temperature-averaging flow channel structure of the silicon IGBT and silicon carbide SBD diode hybrid power module. DETAILED DESCRIPTION
[0015] The following is a further detailed description of the specific embodiments of the present invention. It should be understood that the description of the embodiments of the present invention herein is not intended to limit the protection scope of the present invention.
[0016] like Figure 1 As shown, it is a structural schematic diagram of the temperature-averaging flow channel structure of the hybrid power module of silicon IGBT and silicon carbide SBD diode provided by the utility model. The temperature-averaging flow channel structure of the hybrid power module of silicon IGBT and silicon carbide SBD diode includes a heat dissipation base plate 10, a heat dissipation water channel 20 arranged on the heat dissipation base plate 10, and a plurality of power modules 30 arranged on the heat dissipation base plate 10. It can be imagined that the temperature-averaging flow channel structure of the hybrid power module of silicon IGBT and silicon carbide SBD diode also includes some other functional modules, such as power supply module, welding module, etc., which are technologies already known to those skilled in the art and will not be described one by one here.
[0017] Please also read Figures 2 to 4 A plurality of heat dissipation fins 11 are arranged at intervals on one side of the heat dissipation base plate 10 facing the heat dissipation water channel 20. The heat dissipation fins 11 may be in the shape of a cylindrical or elliptical cylindrical structure. The plurality of heat dissipation fins 11 are distributed in three regions, namely a first region 12, a second region 13, and a third region 14, each region corresponding to the power module 30 arranged on the heat dissipation base plate 10.
[0018] The first area 12 is close to the coolant inlet, and the third area 14 is close to the coolant outlet. The height of some of the heat dissipation fins 11 gradually decreases from the first area 12 toward the third area 14, thereby cooperating with the heat dissipation channel 20 to control the uniform temperature of the entire module. The specific coordination will be described below.
[0019] The heat dissipation water channel 20 includes a main body 21, a first partition 22 arranged on the main body 21 and corresponding to the first area 12, a second partition 23 arranged at a side of the first partition 22 and corresponding to the second area 13, and a third partition 24 arranged at a side of the second partition 23 and corresponding to the third area 14.
[0020] The side of the body 21 facing the heat dissipation base plate 10 is in contact with and fixedly connected to the heat dissipation base plate 10, so that the heat dissipation fins 11 in the first area 12 are located in the first partition 22, the heat dissipation fins 11 in the second area 13 are located in the second partition 23, and the heat dissipation fins 11 in the third area 14 are located in the third partition 24. The coolant enters from the inlet position of the heat dissipation channel 20, passes through the first, second, and third partitions 22, 23, and 24 in sequence, and finally flows out from the outlet position of the heat dissipation channel 20, so as to perform heat dissipation operation on the power module 30 on the heat dissipation base plate 10.
[0021] At least four small bosses 25 are arranged on the first partition 22, and the height of the heat dissipation fins 11 corresponding to the four small bosses 25 is reduced. When the coolant flows through the first partition 22, the flow channel space of the coolant is reduced and the flow speed is accelerated, thereby improving the heat dissipation effect there.
[0022] At least two middle bosses 26 are spaced apart on the second partition 23, and the height of the middle bosses 26 is greater than the height of the small bosses 25, so that the height of the heat dissipation fin pins 11 corresponding to the second partition 23 is less than the height of the heat dissipation fin pins 11 corresponding to the first partition 22. After the coolant flows through the second partition 23, the flow channel space of the coolant is further reduced, so that the flow rate of the coolant at the second partition 23 is faster than the flow rate of the coolant at the first partition 22, thereby further enhancing the heat dissipation effect at the second partition 23.
[0023] At least two large bosses 27 are spaced apart on the third partition 24, and the height of the large bosses 27 is greater than the height of the middle boss 26, so that the height of the heat dissipation fin pins 11 corresponding to the third partition 24 is less than the height of the heat dissipation fin pins 11 corresponding to the second partition 23. When the coolant flows through the third partition 24, the flow channel space of the coolant is greatly reduced, so that the flow rate of the coolant at the third partition 24 is faster than the flow rate of the coolant at the second partition 23, thereby greatly enhancing the heat dissipation effect at the third partition 24.
[0024] The upper and lower bridges in the power module 30 are respectively composed of three silicon IGBT chips 31 and twelve silicon carbide SBD diode chips 32 arranged in parallel in a line. The power module 30 is soldered on the DBC substrate through a primary reflow, and then the DBC substrate is soldered on the heat dissipation base plate 10 through a secondary reflow.
[0025] Compared with the prior art, the temperature-averaging flow channel structure of the hybrid power module of silicon IGBT and silicon carbide SBD diode provided by the utility model adopts the silicon carbide SBD diode chip 32, which has lower loss than the FRD diode, and the chips are arranged in a straight line, which greatly reduces the influence of thermal coupling, thereby reducing the overall junction temperature of the module. The heights of the small, medium and large bosses 25, 26 and 27 increase from low to high as the coolant flows, so that the heat dissipation effect of the first, second and third partitions 22, 23 and 24 is gradually enhanced, thus compensating for the influence of the coolant after heat exchange, thereby reducing the temperature difference between each of the power modules 30.
[0026] The above are only preferred embodiments of the present invention and are not intended to limit the protection scope of the present invention. Any modification, equivalent substitution or improvement within the spirit of the present invention are included in the scope of the claims of the present invention.
Claims
1. A temperature-averaging flow channel structure for a hybrid power module of a silicon IGBT and a silicon carbide SBD diode, characterized in that: The temperature-averaging flow channel structure of the silicon IGBT and silicon carbide SBD diode hybrid power module includes a heat dissipation base plate, a heat dissipation water channel arranged on the heat dissipation base plate, and a plurality of power modules arranged on the heat dissipation base plate. A plurality of heat dissipation fins are arranged at intervals on one side of the heat dissipation base plate facing the heat dissipation water channel. The heat dissipation water channel includes a body, a first partition arranged on the body, a second partition arranged on one side of the first partition, and a third partition arranged on one side of the second partition. At least four small bosses are arranged at intervals on the first partition, at least two middle bosses are arranged at intervals on the second partition, and at least two large bosses are arranged at intervals on the third partition. The height of the large boss is greater than the height of the middle boss, and the height of the middle boss is greater than the height of the small boss. The upper and lower bridges in the power module are respectively arranged in parallel in a line by three silicon IGBT chips and twelve silicon carbide SBD diode chips.
2. The temperature-averaging flow channel structure of the hybrid power module of silicon IGBT and silicon carbide SBD diode according to claim 1, characterized in that: The heat dissipation fin pins are in the shape of a cylinder or an elliptical cylinder structure.
3. The temperature-averaging flow channel structure of the hybrid power module of silicon IGBT and silicon carbide SBD diode according to claim 1, characterized in that: The plurality of heat dissipation fins are distributed in three regions, namely a first region, a second region, and a third region.
4. The temperature-averaging flow channel structure of the hybrid power module of silicon IGBT and silicon carbide SBD diode according to claim 3, characterized in that: The first area is close to the coolant inlet, and the third area is close to the coolant outlet.
5. The temperature-averaging flow channel structure of the hybrid power module of silicon IGBT and silicon carbide SBD diode according to claim 3, characterized in that: The height of some of the heat dissipation fins gradually decreases from the first area toward the third area.
6. The temperature-averaging flow channel structure of the hybrid power module of silicon IGBT and silicon carbide SBD diode according to claim 3, characterized in that: The heat dissipation fins in the first region are located in the first partition, the heat dissipation fins in the second region are located in the second partition, and the heat dissipation fins in the third region are located in the third partition.