Novel laminated perovskite battery

Abstract

The utility model provides a novel laminated perovskite cell, which comprises a substrate, a perovskite main body, an ETL electrode and an HTL electrode, the perovskite main body, the ETL electrode and the HTL electrode are arranged on the substrate, the perovskite main body comprises a plurality of perovskite layers which are sequentially arranged from bottom to top, and band gaps of the plurality of perovskite layers are different; the ETL electrode and the HTL electrode are located on the two sides of the perovskite main body respectively, the ETL electrode comprises an electron transport layer and a negative electrode which are connected, and the electron transport layer is connected with the multiple perovskite layers; the HTL electrode comprises a hole transport layer and a positive electrode which are connected, and the hole transport layer is connected with the multi-layer perovskite layer. The device has the characteristics of simple structure, low cost and high light conversion efficiency.

Description

Technical Field

[0001] The utility model relates to the field of solar cells, in particular to the field of perovskite cells, and further to a novel laminated perovskite cell. Background Art

[0002] Solar cells are a type of photovoltaic semiconductor sheet that uses sunlight to generate electricity directly. As long as the illumination meets certain illumination conditions, it can instantly output voltage and generate current in the presence of a circuit. Perovskite cells are a type of solar cell that uses perovskite-type organic metal halide semiconductors as light-absorbing materials. They belong to the third generation of solar cells, also known as new concept solar cells.

[0003] The sunlight spectrum can be divided into several continuous parts. In the prior art, for example, CN114914365A discloses a perovskite / perovskite tandem solar cell with an inverted structure, and CN217933798U discloses a wide bandgap perovskite / narrow bandgap perovskite / quantum dot triple-junction tandem solar cell. These documents fully absorb sunlight through a combination of perovskite cells with different band gaps, thereby maximally converting light energy into electrical energy.

[0004] However, in the above-mentioned disclosed technologies, the structures are all vertically stacked structures, and the wide bandgap perovskite and the narrow bandgap perovskite are respectively provided with an electron transport layer (ETL) and a hole transport layer (HTL). Such a setting has the following defects: 1. The structure has many layers, the preparation process is complicated, and the preparation difficulty is increased; 2. When sunlight is incident, it needs to pass through the electron transport layer, perovskite layer and hole transport layer of the wide bandgap perovskite first, and then pass through the tunnel junction to enter the narrow bandgap perovskite. When entering the narrow bandgap perovskite, it needs to pass through at least one electron transport layer or hole transport layer before being absorbed by the perovskite layer of the narrow bandgap perovskite; the light loss is large, and the light conversion efficiency is difficult to continue to improve; 3. The perovskite layer of the vertically stacked structure cannot be prepared after the transport layer. In this way, the perovskite layer will be limited by the process of the transport layer, that is, the perovskite material is sensitive to temperature and generally cannot be higher than 150°C, and the transport layer needs to be annealed. Therefore, the perovskite material needs to be preferentially selected to be able to adapt to the annealing temperature; this will affect the performance of the product. Utility Model Content

[0005] Therefore, the utility model provides a novel laminated perovskite battery to solve the above problems.

[0006] To achieve the above purpose, the technical solution provided by the utility model is as follows:

[0007] A novel stacked perovskite battery comprises a substrate and a perovskite body, an ETL electrode and an HTL electrode arranged on the substrate, wherein the perovskite body comprises multiple perovskite layers arranged in sequence from bottom to top, and the band gaps of the multiple perovskite layers are different; the ETL electrode and the HTL electrode are respectively located on both sides of the perovskite body, the ETL electrode comprises a connected electron transport layer and a negative electrode, and the electron transport layer is connected to the multiple perovskite layers; the HTL electrode comprises a connected hole transport layer and a positive electrode, and the hole transport layer is connected to the multiple perovskite layers.

[0008] Furthermore, in the multi-layer perovskite layers arranged from bottom to top, the band gap gradually increases.

[0009] Furthermore, the electron transport layer is arranged on the outside of the perovskite body and connected to the multi-layer perovskite layer; the negative electrode is connected to the outside of the electron transport layer.

[0010] Furthermore, the material of the electron transport layer is C 60 material, PCBM (fullerene derivative) material or SnO2 (tin oxide) material.

[0011] Furthermore, the hole transport layer is arranged on the outside of the perovskite body and connected to the multi-layer perovskite layer; the positive electrode is connected to the outside of the hole transport layer.

[0012] Furthermore, the material of the hole transport layer is NiOx (nickel oxide) material, CuO (copper oxide) material, CuSCN (cuprous thiocyanate) material, Spiro-OMeTAD material or PTAA (polytriarylamine) material.

[0013] Furthermore, it also includes an anti-reflection film, which covers the upper surfaces of the perovskite body, the ETL electrode and the HTL electrode.

[0014] Furthermore, two adjacent perovskite layers are isolated by a light-transmitting isolation layer.

[0015] Furthermore, the light-transmitting isolation layer is an ITO layer or a FTO (conductive glass) layer.

[0016] A method for preparing a novel stacked perovskite battery comprises the following steps: S1, providing a substrate, and preparing an ETL electrode and an HTL electrode on the substrate, wherein the ETL electrode and the HTL electrode are arranged opposite to each other, and the electron transport layer of the ETL electrode and the hole transport layer of the HTL electrode are annealed; S2, stacking multiple perovskite layers from bottom to top between the ETL electrode and the HTL electrode; wherein the band gaps of the multiple perovskite layers are different, and the multiple perovskite layers are all connected to the ETL electrode and the HTL electrode.

[0017] Furthermore, the ETL electrode includes an electron transport layer and a negative electrode, and the HTL electrode includes a hole transport layer and a positive electrode; in step S1, a positive electrode and a negative electrode are first prepared on a substrate, and then a hole transport layer and an electron transport layer are respectively prepared, the positive electrode is connected to the hole transport layer, and the electron transport layer is connected to the negative electrode, and the electron transport layer and the hole transport layer are annealed.

[0018] The technical solution provided by the utility model has the following beneficial effects:

[0019] 1. The perovskite body, ETL electrode and HTL electrode are in a horizontal distribution structure. The transmission layers of the ETL electrode and the HTL electrode are simultaneously connected to the multi-layer perovskite layer of the perovskite body to form a parallel structure. The structure has been greatly optimized, which can greatly simplify the preparation process, reduce costs, and have higher process controllability and more guaranteed yield.

[0020] 2. The adjacent perovskite layers of the perovskite body are isolated only by a light-transmitting isolation layer. When sunlight is incident on the perovskite body, it passes through fewer structural layers, which is equivalent to at least avoiding passing through multiple transmission layers; the light loss is small, which can effectively improve the photoelectric conversion efficiency.

[0021] 3. The perovskite body, ETL electrode and HTL electrode are horizontally distributed and are all arranged on the substrate. During preparation, the ETL electrode and HTL electrode can be prepared first, and then the perovskite body can be prepared, such as the preparation method provided in this scheme. In this way, the perovskite body is not affected by the process of the transport layer, which is beneficial to improving the stability of the battery. Moreover, since there is no need to consider the influence of the annealing temperature of the transport layer on the perovskite layer, the selection of the transport layer material is not so harsh, and the material with the best performance match can be selected to further improve the product performance. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] Figure 1 Shown is a cross-sectional view of a novel stacked perovskite cell in Example 1;

[0023] Figure 2 Shown is a top view of the novel stacked perovskite cell in Example 1;

[0024] Figure 3 Shown is a cross-sectional view of a novel stacked perovskite cell in Example 2;

[0025] Figure 4 Shown is a cross-sectional view of the novel stacked perovskite cell in Example 3;

[0026] Figure 5 Shown is a cross-sectional view of the novel stacked perovskite cell in Example 4. DETAILED DESCRIPTION

[0027] To further illustrate the various embodiments, the present invention provides drawings. These drawings are part of the disclosure of the present invention, which are mainly used to illustrate the embodiments and can be used in conjunction with the relevant descriptions in the specification to explain the operating principles of the embodiments. With reference to these contents, a person of ordinary skill in the art should be able to understand other possible implementations and advantages of the present invention. The components in the figures are not drawn to scale, and similar component symbols are generally used to represent similar components.

[0028] In the description of the present invention, terms such as "upper", "lower", "left", "right", "front", "backward", etc., and the orientation or position relationship are based on the orientation or position relationship shown in the accompanying drawings, and are only for the convenience of description and simplification of operation, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present invention.

[0029] The utility model is now further described in conjunction with the accompanying drawings and specific implementation methods.

[0030] Embodiment 1

[0031] Reference Figure 1 , Figure 2 As shown, a novel stacked perovskite battery provided in this embodiment includes a substrate 10 and a perovskite body 40, an ETL electrode 21 and a HTL electrode 30 arranged on the substrate 10, wherein the perovskite body 40 includes a plurality of perovskite layers arranged in sequence from bottom to top, and the band gaps of the plurality of perovskite layers are different. In this embodiment, there are two upper and lower perovskite layers, the lower perovskite layer is defined as a first perovskite layer 41, and the upper perovskite layer is defined as a second perovskite layer 42, and the first perovskite layer 41 and the second perovskite layer 42 are isolated by a light-transmitting isolation layer 401; the light-transmitting isolation layer 401 provides a tunneling barrier between two adjacent perovskite layers, thereby playing an effective isolation role.

[0032] Among them, preferably, the upper surface facing away from the substrate 10 is the side facing the sun, and the sunlight is incident from top to bottom. Along the incident direction of the sunlight, the band gap of the multi-layer perovskite layer gradually decreases, that is, the second perovskite layer 42 is a wide band gap perovskite layer, and the first perovskite layer 41 is a narrow band gap perovskite layer. Such an arrangement can make the sunlight penetrate better. Specifically, the width and narrowness of the above-mentioned band gap are relative. For example, the second perovskite layer 42 is a wide band gap perovskite layer, which means that the band gap of the second perovskite layer 42 is greater than that of the first perovskite layer 41, and vice versa. And the size of the band gap can be specifically selected according to the actual situation. For example, in this embodiment, the band gap range of the first perovskite layer 41 is 1.2-1.8eV; the band gap range of the second perovskite layer 42 is 1.7-2.1eV.

[0033] The ETL electrode 20 and the HTL electrode 30 are respectively located on both sides of the perovskite body 40, so that the perovskite body 40, the ETL electrode 20 and the HTL electrode 30 form a horizontal distribution structure; the ETL electrode 20 includes a connected electron transport layer 22 and a negative electrode 21, and the electron transport layer 22 is connected to the multi-layer perovskite layer; that is, the electron transport layer 22 is simultaneously connected to the first perovskite layer 41 and the second perovskite layer 42. The HTL electrode 30 includes a connected hole transport layer 32 and a positive electrode 31, and the hole transport layer 32 is connected to the multi-layer perovskite layer, that is, the hole transport layer 32 is simultaneously connected to the first perovskite layer 41 and the second perovskite layer 42.

[0034] When sunlight is incident from above, it does not need to pass through the ETL electrode 20 and the HTL electrode 30, but directly enters the second perovskite layer 42, and after being partially absorbed by the second perovskite layer 42, it passes through the light-transmitting isolation layer 401 and enters the first perovskite layer 41, and is thus absorbed by the first perovskite layer 41. In this way, sunlight of different wavelengths can be absorbed as much as possible, thereby improving the photoelectric conversion efficiency.

[0035] The structure of this embodiment has the following beneficial effects:

[0036] 1. The perovskite body 40, the ETL electrode 20 and the HTL electrode 30 are in a horizontal distribution structure. The transport layers (i.e., the electron transport layer 22 and the hole transport layer 32) of the ETL electrode 20 and the HTL electrode 30 are simultaneously connected to the multi-layer perovskite layer of the perovskite body 40 to form a parallel structure. The structure is greatly optimized, which can greatly simplify the preparation process, reduce costs, and has higher process controllability and more guaranteed yield.

[0037] 2. Adjacent perovskite layers of the perovskite body 40 are isolated only by the light-transmitting isolation layer 401. When sunlight is incident on the perovskite body 40, it passes through fewer structural layers, which is equivalent to avoiding passing through multiple transmission layers; the light loss is small, which can effectively improve the photoelectric conversion efficiency.

[0038] 3. The perovskite body 40, the ETL electrode 20 and the HTL electrode 30 are horizontally distributed and are all arranged on the substrate 10. During preparation, the ETL electrode 20 and the HTL electrode 30 can be prepared first, and then the perovskite body 40 can be prepared. In this way, the perovskite body 40 is not affected by the process of the transport layer, which is beneficial to improving the stability of the battery. Moreover, since there is no need to consider the influence of the annealing temperature of the transport layer on the perovskite layer, the selection of the transport layer material is not so harsh, and the material with the best performance match can be selected to further improve the product performance.

[0039] Specifically, in this embodiment, the electron transport layer 22 is arranged on the outside of the perovskite body 40 and connected to the multiple perovskite layers, that is, connected to the first perovskite layer 41 and the second perovskite layer 42 at the same time; the negative electrode 21 is connected to the outside of the electron transport layer 22, which is convenient for external connection. Among them, the material of the electron transport layer 22 can be selected from C 60 Materials, PCBM (fullerene derivative) materials or SnO2 (tin oxide) materials are more common in practical applications; of course, other materials can also be used in other embodiments.

[0040] Similarly, the hole transport layer 32 is arranged on the outside of the perovskite body 40 and connected to the multi-layer perovskite layer, that is, connected to the first perovskite layer 41 and the second perovskite layer 42 at the same time; the positive electrode 31 is connected to the outside of the hole transport layer 32, which is convenient for external connection. Among them, the material of the hole transport layer 32 can be selected from NiOx (nickel oxide) material, CuO (copper oxide) material, CuSCN (cuprous thiocyanate) material, Spiro-OMeTAD material or PTAA (polytriarylamine) material, which is more common in practical applications; of course, other materials can also be used in other embodiments.

[0041] Specifically, a light-transmitting isolation layer 401 is provided between two adjacent perovskite layers for isolation. The light-transmitting isolation layer 401 ensures the flatness of the covering surface when preparing the next perovskite layer, so that good flatness can be maintained after preparing multiple layers of perovskite layers. At the same time, the light-transmitting isolation layer 401 is provided between adjacent perovskite layers, which can also effectively avoid defects that may be caused by different band gaps between adjacent perovskite layers.

[0042] Specifically, since the multiple layers of perovskite layers in this solution form a parallel structure, there is no need to use a tunnel junction structure between the perovskite layers. In this embodiment, the light-transmitting isolation layer 401 is used to maintain the flatness of each perovskite layer. Therefore, when selecting the material of the light-transmitting isolation layer 401, a more light-transmitting material can be selected for preparation to reduce light blocking.

[0043] In this embodiment, it is preferred that the light-transmitting isolation layer 401 is an ITO layer with good light transmittance; at the same time, the substrate 10 adopts a light-transmitting substrate, such as high-transmittance glass. When a light-transmitting substrate is adopted, sunlight can also penetrate the substrate 10 from below and enter the perovskite body 40. Of course, in other embodiments, the configuration of the light-transmitting isolation layer 401 and the substrate 10 is not limited thereto, such as the light-transmitting isolation layer 401 can also adopt a highly light-transmitting FTO layer; and the preparation temperature of the above-mentioned ITO layer or FTO layer is low, which basically does not affect the perovskite layer.

[0044] This embodiment also provides a method for preparing the novel stacked perovskite battery, comprising the following steps:

[0045] S1, providing a substrate 10, and preparing an ETL electrode 20 and an HTL electrode 30 on the substrate 10, the ETL electrode 20 and the HTL electrode 30 are arranged opposite to each other, and performing annealing treatment on the electron transport layer 22 of the ETL electrode 20 and the hole transport layer 32 of the HTL electrode 30.

[0046] Specifically, in this step, a positive electrode 31 and a negative electrode 21 are first prepared on the substrate 10, and then a hole transport layer 32 and an electron transport layer 22 are respectively prepared, the positive electrode 31 is connected to the hole transport layer 32, the electron transport layer 22 is connected to the negative electrode 21, and the electron transport layer 22 and the hole transport layer 32 are annealed; in this way, the electron transport layer 22 and the hole transport layer 32 are prepared in advance.

[0047] S2, stacking multiple perovskite layers from bottom to top between the ETL electrode 20 and the HTL electrode 30. Specifically, in the present embodiment, since the structure of the light-transmitting isolation layer 401 is added, in actual preparation, the perovskite layer / light-transmitting isolation layer 401 are repeatedly stacked to obtain multiple perovskite layers, so that two adjacent perovskite layers are isolated by the light-transmitting isolation layer 401; wherein the band gaps of the multiple perovskite layers are different, and the multiple perovskite layers are all connected to the ETL electrode 20 and the HTL electrode 30.

[0048] As in this embodiment, a first perovskite layer 41, a light-transmitting isolation layer 401, and a second perovskite layer 42 are sequentially prepared between the ETL electrode 20 and the HTL electrode 30, wherein the first perovskite layer 41 is a narrow-bandgap perovskite layer, and the second perovskite layer 42 is a wide-bandgap perovskite layer. The first perovskite layer 41 and the second perovskite layer 42 are both connected to the ETL electrode 20 and the HTL electrode 30. In this way, the structure of the novel laminated perovskite battery is obtained.

[0049] By adopting the preparation method provided in the present application, the perovskite body is not affected by the process of the transport layer, which is beneficial to improving the stability of the battery. Moreover, since there is no need to consider the influence of the annealing temperature of the transport layer on the perovskite layer, the selection of the transport layer material is not so harsh, and the material with the best performance match can be selected to further improve the product performance.

[0050] Embodiment 2

[0051] The structure of a novel laminated perovskite battery provided in this embodiment is substantially the same as that of the novel laminated perovskite battery provided in the first embodiment, except that: Figure 3As shown, based on the structure of the first embodiment, this embodiment further adds an anti-reflection film 50, and the anti-reflection film 50 covers the upper surface of the perovskite body 40, the ETL electrode 20 and the HTL electrode 30. The structure of adding the anti-reflection film 50 plays a protective role on the one hand, and also plays a role in increasing the transmittance of incident light on the other hand, which has a certain improvement on the product quality and light conversion efficiency.

[0052] This embodiment also provides a preparation method for realizing the novel stacked perovskite cell provided in this embodiment. On the basis of the preparation method provided in Example 1, step S3 is added to cover the upper surfaces of the perovskite body 40, the ETL electrode 20 and the HTL electrode 30 with an antireflection film 50.

[0053] Embodiment 3

[0054] The structure of the novel laminated perovskite battery provided in this embodiment is substantially the same as that of the novel laminated perovskite battery provided in the first embodiment, except that: Figure 4 As shown, in this embodiment, the perovskite body 40 has three perovskite layers, which are, from bottom to top, a first perovskite layer 41, a second perovskite layer 42 and a third perovskite layer 43, that is, a third perovskite layer 43 is added on the basis of the first embodiment, and a light-transmitting isolation layer 401 is provided between the first perovskite layer 41 and the second perovskite layer 42, and between the second perovskite layer 42 and the third perovskite layer 43.

[0055] At the same time, the band gaps of the first perovskite layer 41, the second perovskite layer 42 and the third perovskite layer 43 are different, and do not decrease or increase in sequence; for example, in this embodiment, the band gap of the second perovskite layer 42 is greater than that of the first perovskite layer 41 and greater than that of the third perovskite layer 43. Or other arrangement orders are also possible.

[0056] Embodiment 4

[0057] The structure of the novel laminated perovskite battery provided in this embodiment is substantially the same as that of the novel laminated perovskite battery provided in the first embodiment, except that: Figure 5 As shown, based on the structure of the first embodiment, the light-transmitting isolation layer 401 disposed between the first perovskite layer 41 and the second perovskite layer 42 is removed; that is, the second perovskite layer 42 is directly stacked on the upper surface of the first perovskite layer 41. Such a configuration further simplifies the structure and improves light transmittance.

[0058] The present embodiment provides a method for preparing a novel stacked perovskite cell provided in the present embodiment, which is substantially the same as the method provided in the first embodiment, except that in step S2, a first perovskite layer 41 and a second perovskite layer 42 are stacked directly from bottom to top between the ETL electrode and the HTL electrode.

[0059] Although the present invention has been specifically demonstrated and described in conjunction with the preferred embodiments, those skilled in the art should understand that various changes may be made to the present invention in form and detail without departing from the spirit and scope of the present invention as defined in the appended claims, all of which are within the scope of protection of the present invention.

Claims

1. A novel stacked perovskite battery, characterized in that: It includes a substrate and a perovskite body, an ETL electrode and an HTL electrode arranged on the substrate, wherein the perovskite body includes multiple perovskite layers arranged in sequence from bottom to top, and the band gaps of the multiple perovskite layers are different. The ETL electrode and the HTL electrode are respectively located on both sides of the perovskite body, and the ETL electrode includes an electron transport layer and a negative electrode connected to each other, and the electron transport layer is connected to the multiple perovskite layers; the HTL electrode includes a hole transport layer and a positive electrode connected to each other, and the hole transport layer is connected to the multiple perovskite layers.

2. The novel stacked perovskite cell according to claim 1 is characterized in that: Along the incident direction of sunlight, the band gap of the multi-layer perovskite layer gradually decreases.

3. The novel stacked perovskite cell according to claim 1 is characterized in that: The electron transport layer is arranged on the outside of the perovskite body and connected to the multi-layer perovskite layer; the negative electrode is connected to the outside of the electron transport layer.

4. The novel stacked perovskite cell according to claim 1 is characterized in that: The hole transport layer is arranged on the outside of the perovskite body and connected to the multi-layer perovskite layer; the positive electrode is connected to the outside of the hole transport layer.

5. The novel stacked perovskite cell according to claim 1 is characterized in that: The material of the hole transport layer is NiO x material, CuO material, CuSCN material, Spiro-OMeTAD material or PTAA material; the material of the electron transport layer is C 60 material, PCBM material or SnO2 material.

6. The novel stacked perovskite cell according to claim 1, characterized in that: The invention also includes an anti-reflection film, which covers the upper surfaces of the perovskite body, the ETL electrode and the HTL electrode.

7. The novel stacked perovskite cell according to claim 1 is characterized in that: Two adjacent perovskite layers are isolated by a light-transmitting isolation layer.

8. The novel stacked perovskite cell according to claim 7, characterized in that: The light-transmitting isolation layer is an ITO layer or a FTO layer.

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