Plasma processing assembly
By adding multiple microwave input ports and connection control structures to the plasma processing device, the problem of uneven plasma concentration is solved, and the uniform distribution and flexible adjustment of plasma concentration in the chamber is achieved, thereby improving the effect of plasma treatment.
Patent Information
- Application Number
- CN202421148774.4
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-05-24
- Publication Date
- 2025-01-10
- Estimated Expiration
- 2034-05-24
AI Technical Summary
The existing plasma processing device is connected to only one microwave supply source and only one microwave input port on the cavity, resulting in uneven plasma concentration in the chamber, which cannot effectively control the plasma concentration at different locations, making it difficult to achieve optimal electricity. Slurry treatment effect.
A plasma processing component is designed to connect multiple microwave supply sources and set up multiple spaced microwave input ports on the top of the cavity. Each input port corresponds to a connection control structure for connecting and controlling the microwave supply source separately. The output microwave intensity ensures uniform distribution of the plasma in the chamber and adjusts the plasma concentration at different locations.
Through the design of multiple microwave supply sources and control structures, the uniform distribution and flexible adjustment of the plasma concentration in the chamber is achieved, adapting to the surface treatment needs at different locations, and significantly improving the effect of plasma treatment.
Smart Images
Figure CN222338218U_ABST
Abstract
Description
Technical Field
[0001] The utility model relates to a plasma processing component, in particular to a processing component which excites gas into plasma through microwaves and uses the plasma to process the surface of a workpiece. Background Art
[0002] In the manufacturing field of semiconductor components such as wafers, plasma processing technology is often used to treat the surface of workpieces.
[0003] Among them, today's plasma processing equipment includes a single microwave supply source and a cavity, the interior of the cavity has a chamber, the cavity has a microwave input port connected to the chamber, the microwave supply source is connected to the microwave input port, a dielectric shield is provided around the outside of the chamber, and the cavity is further connected to a vacuum pumping device and a working gas supply source. The workpiece to be processed is placed in the chamber of the cavity, the vacuum pumping device evacuates the chamber of the cavity, the working gas supply source inputs working gas into the chamber, and the microwave supply source outputs microwaves to discharge in the chamber through the microwave input port and the dielectric shield, so that the working gas in the chamber receives the discharge energy and is excited into plasma, thereby utilizing the plasma to perform surface treatment operations on the workpiece in the chamber.
[0004] Although current plasma processing devices can use plasma to perform surface treatment on workpieces in a chamber, current plasma processing devices are only connected to one microwave supply source and have only one microwave input port on the cavity, so that a higher concentration of plasma is formed at the position where the microwave supply source directly transmits microwaves, while the plasma concentration at other positions far away from the microwave transmission position is lower. Therefore, the plasma distribution concentration is uneven, and the plasma concentration cannot be controlled according to the surface treatment requirements of different positions on the workpiece. Therefore, it is difficult to achieve a better plasma treatment effect. Utility Model Content
[0005] The technical problem to be solved by the utility model is to improve the problem that the cavity of the current plasma processing device has only one microwave input port and is only connected to one microwave supply source, resulting in uneven plasma concentration in the cavity and inability to control the plasma concentration at different positions.
[0006] The technical solution proposed by the utility model is to provide a plasma processing component that can be connected to multiple microwave supply sources, and the plasma processing component includes:
[0007] A cavity body, a chamber is formed inside the cavity body, a top of the cavity body has a set of parts, the set of parts has a plurality of input ports, the plurality of input ports are arranged at intervals and are connected to the chamber respectively; and
[0008] A plurality of connection control structures are arranged in the assembly part, and each of the connection control structures is respectively arranged at one of the input ports. The plurality of connection control structures can respectively connect to the plurality of microwave supply sources. The microwaves supplied by the microwave supply sources can enter the cavity of the cavity through the corresponding input ports, and the connection control structures can control the intensity of the microwaves supplied by the microwave supply sources.
[0009] Preferably, as in the aforementioned plasma processing assembly, the assembly portion is conical, the multiple input ports are not parallel to each other, and the center line of each input port faces the center of the chamber, and the multiple connection control structures are not parallel to each other.
[0010] Preferably, as in the aforementioned plasma processing assembly, the assembly portion is planar, the plurality of input ports are formed on the same plane, and the plurality of connection control structures are arranged perpendicular to the assembly portion and parallel to each other.
[0011] Preferably, as in the aforementioned plasma processing assembly, the number of the plurality of connection control structures is three.
[0012] Preferably, as in the aforementioned plasma processing assembly, the number of the plurality of connection control structures is four.
[0013] The beneficial effects that can be achieved by the utility model are as follows: the plasma processing component of the utility model is applied to a plasma processing device and can be connected to the multiple microwave supply sources, a vacuum device and a working gas supply source, the vacuum device and the working gas supply source are respectively connected to the chamber of the cavity, a workpiece to be surface-treated is placed in the chamber, the vacuum device evacuates the chamber, the working gas supply source inputs working gas into the chamber, and the multiple microwave supply sources output microwaves, so that the microwaves enter the chamber through the corresponding connection control structures and corresponding input ports of the multiple microwave supply sources respectively, and receive discharge energy to be excited into plasma, thereby performing surface treatment operations on the workpiece.
[0014] Among them, since the plasma processing assembly of the utility model can connect multiple microwave supply sources, and each of the microwave supply sources inputs microwaves into the cavity of the cavity to excite plasma through the multiple input ports arranged at intervals in the assembly part of the cavity, and the multiple connection control structures can respectively control the microwave intensity output by the corresponding microwave supply source, so that the plasma concentration at different positions in the cavity of the cavity can be adjusted according to demand. For example, when a more uniform plasma concentration is required, since the multiple input ports are arranged at intervals in the assembly part, the positions where the microwave enters the cavity of the cavity are more evenly distributed, and then each of the microwave supply sources outputs the same microwave intensity, the plasma concentration at different positions in the cavity can be controlled to be consistent. If the surface treatment of the workpiece requires different plasma concentrations at different positions, it can be achieved by controlling the corresponding microwave supply sources to output different microwave intensities through the multiple connection control structures, thereby effectively achieving a better plasma processing effect. BRIEF DESCRIPTION OF THE DRAWINGS
[0015] Figure 1 : It is a top view stereoscopic schematic diagram of a first preferred embodiment of the plasma processing component of the utility model.
[0016] Figure 2 : It is a bottom-up stereoscopic schematic diagram of a first preferred embodiment of the plasma processing component of the utility model.
[0017] Figure 3 : It is a front plan view schematic diagram of a first preferred embodiment of the plasma processing component of the utility model.
[0018] Figure 4 : It is a schematic diagram of a top view of a first preferred embodiment of the plasma processing component of the utility model.
[0019] Figure 5 : It is a top view stereoscopic schematic diagram of a second preferred embodiment of the plasma processing component of the utility model.
[0020] Figure 6 : It is a front plan view schematic diagram of a second preferred embodiment of the plasma processing component of the utility model.
[0021] Figure 7 : It is a schematic diagram of a top view of a second preferred embodiment of the plasma processing component of the utility model.
[0022] Brief description of the figures:
[0023] 10: Cavity
[0024] 11: Chamber
[0025] 12: Organization Department
[0026] 121: Input port
[0027] 20: Connection control structure
[0028] 30: Platform DETAILED DESCRIPTION
[0029] The following is a detailed description of the technical means used by the present invention to achieve the intended purpose of the present invention with reference to the drawings and preferred embodiments of the present invention.
[0030] See also Figure 1 and Figure 5 , which are the first and second preferred embodiments of the plasma processing component of the utility model. The plasma processing component can be connected to multiple microwave supply sources and includes a cavity 10 and multiple connection control structures 20.
[0031] like Figure 2 and Figure 4 As shown, a chamber 11 is formed inside the cavity 10 , and a group of devices 12 is formed on the top of the cavity 10 . The group of devices 12 has a plurality of input ports 121 . The plurality of input ports 121 are arranged at intervals and are connected to the chamber 11 respectively.
[0032] like Figures 1 to 4 As shown, the multiple connection control structures 20 are arranged in the assembly part 12, and each of the connection control structures 20 is respectively arranged at one of the input ports 121. The multiple connection control structures 20 can respectively connect to the multiple microwave supply sources. The microwaves supplied by the microwave supply sources can enter the chamber 11 of the cavity 10 through the corresponding input ports 121, and the connection control structures 20 can control the intensity of the microwaves supplied by the microwave supply sources.
[0033] The plasma processing assembly of the utility model is applied to a plasma processing device and can be connected to the plurality of microwave supply sources, a vacuum device and a working gas supply source, such as Figure 1 and Figure 5 As shown, the cavity 10 of the plasma processing component is set on a platform 30 of the plasma processing device, the vacuum device and the working gas supply source are respectively connected to the chamber 11 of the cavity 10, a workpiece to be surface treated is placed in the chamber 11, the vacuum device evacuates the chamber 11, the working gas supply source inputs working gas to the chamber 11, and the multiple microwave supply sources output microwaves, so that the microwaves enter the chamber 11 through the corresponding connection control structures 20 and the corresponding input ports 121 of the multiple microwave supply sources, and receive discharge energy to be excited into plasma, thereby performing surface treatment operations on the workpiece.
[0034] Among them, Figure 2 and Figure 4As shown, since the plasma processing assembly of the utility model can connect multiple microwave supply sources, and each of the microwave supply sources inputs microwaves to the chamber 11 of the cavity 10 through the multiple input ports 121 arranged at intervals in the assembly part 12 of the cavity 10 to excite plasma, and the multiple connection control structures 20 can respectively control the microwave intensity output by the corresponding microwave supply source, so that the plasma concentration at different positions in the chamber 11 can be adjusted according to demand. For example, when a more uniform plasma concentration is required, since the multiple input ports 121 are arranged at intervals in the assembly part 12, the positions where the microwave enters the chamber 11 of the cavity 10 are more evenly distributed, and each of the microwave supply sources outputs the same microwave intensity, the plasma concentration at different positions in the chamber 11 can be controlled to be consistent, and if the surface treatment of the workpiece requires different plasma concentrations at different positions, it can be achieved by controlling the corresponding microwave supply sources to output different microwave intensities through the multiple connection control structures 20, thereby effectively achieving a better plasma processing effect.
[0035] In addition, if Figures 2 to 4 As shown, in the first preferred embodiment of the plasma processing assembly of the utility model, the assembly portion 12 is conical, the multiple input ports 121 are not parallel to each other, and the center line of each input port 121 is oriented toward the center of the chamber 11, and the multiple connection control structures 20 are not parallel to each other. In this embodiment, since the center line of the input port 121 is oriented toward the center of the chamber 11, when the multiple microwave supply sources output microwaves to the chamber 11 through the multiple connection control structures 20 and the multiple input ports 121, the microwaves will be more concentrated in the center of the chamber 11, so that the plasma concentration in the center of the chamber 11 can be increased to adjust the plasma concentration in response to the processing requirements of the workpiece.
[0036] In addition, if Figures 5 to 7 As shown, in the second preferred embodiment of the plasma processing assembly of the utility model, the assembly part 12 is planar, the multiple input ports 121 are formed in the same plane, and the multiple connection control structures 20 are arranged perpendicular to the assembly part 12 and parallel to each other. In this embodiment, the multiple input ports 121 are evenly distributed in the assembly part 12, so that the multiple microwave supply sources have a larger coverage area for the microwaves output from the chamber 11 through the multiple input ports 121, so that the plasma at different positions in the cavity 10 is more uniform, or the plasma concentration at different positions can be adjusted according to the processing requirements of the workpiece.
[0037] Furthermore, the number of the multiple connection control structures 20 of the plasma processing component can be increased or decreased according to demand. For example, in the first and second preferred embodiments of the present invention, the number of the multiple connection control structures 20 is three; and in other embodiments of the present invention, the number of the multiple connection control structures 20 can be four.
[0038] In summary, the plasma processing component of the utility model is applied to the plasma processing device, and the multiple connection control structures 20 are respectively connected to the multiple microwave supply sources to respectively control the microwave intensity output by the corresponding microwave supply sources, so that the plasma concentration at different positions in the chamber 11 of the cavity 10 can be adjusted according to needs, and the multiple input ports 121 are arranged at intervals in the assembly part 12 of the cavity 10, so that the positions where the microwaves enter the chamber 11 of the cavity 10 are more evenly distributed, thereby achieving a better plasma processing effect.
[0039] The above is only a preferred embodiment of the utility model, and does not limit the utility model in any form. Although the utility model has been disclosed as a preferred embodiment as above, it is not used to limit the utility model. Any technician familiar with this profession can make some changes or modify the technical contents disclosed above into equivalent embodiments of equivalent changes without departing from the scope of the technical solution of the utility model. However, any simple modification, equivalent change and modification made to the above embodiments based on the technical essence of the utility model without departing from the content of the technical solution of the utility model still fall within the scope of the technical solution of the utility model.
Claims
1. A plasma processing assembly capable of connecting a plurality of microwave supply sources, characterized in that: The plasma processing assembly comprises: A cavity body, a chamber is formed inside the cavity body, a group of devices is formed on the top of the cavity body, a plurality of input ports are formed on the group of devices, and the plurality of input ports are arranged at intervals and are respectively connected to the chamber; and A plurality of connection control structures are arranged in the assembly part, and each of the connection control structures is respectively arranged at one of the input ports. The plurality of connection control structures can respectively connect to the plurality of microwave supply sources. The microwaves supplied by the microwave supply sources can enter the cavity of the cavity through the corresponding input ports, and the connection control structures can control the intensity of the microwaves supplied by the microwave supply sources.
2. The plasma processing assembly according to claim 1, characterized in that The assembly part is cone-shaped, the multiple input ports are not parallel to each other, and the center line of each input port faces the center of the chamber, and the multiple connection control structures are not parallel to each other.
3. The plasma processing assembly according to claim 1, characterized in that The assembly part is in a plane shape, the multiple input ports are formed in the same plane, and the multiple connection control structures are arranged perpendicular to the assembly part and parallel to each other.
4. The plasma processing assembly according to any one of claims 1 to 3, characterized in that: The number of the plurality of connection control structures is three.
5. The plasma processing assembly according to any one of claims 1 to 3, characterized in that: The number of the plurality of connection control structures is four.