Photovoltaic module
By using a quantum-cut adhesive film and a UV cut-off layer stacked design, the problem of low UV light conversion efficiency in photovoltaic modules is solved, achieving efficient conversion and utilization of UV light and improving the efficiency of photovoltaic modules.
Patent Information
- Application Number
- CN202421161392.5
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-05-24
- Publication Date
- 2025-01-10
- Estimated Expiration
- 2034-05-24
AI Technical Summary
The conversion efficiency of ultraviolet light in existing photovoltaic modules is relatively low, which makes it impossible to fully utilize ultraviolet light and limits the further improvement of photovoltaic module efficiency.
The design employs a stacked structure of quantum-cut film and UV cut-off layer. The quantum-cut film converts ultraviolet light into visible light, while the UV cut-off layer controls the UV light transmittance to be 50%–90%. By combining the high-refractive-index quantum-cut film and the low-refractive-index UV cut-off layer, light diffusion is reduced and the utilization rate of ultraviolet light is improved.
While solving the problem of light decay in photovoltaic cells, it improves the conversion efficiency of ultraviolet light and enhances the overall efficiency of photovoltaic modules.
Smart Images

Figure CN222339919U_ABST
Abstract
Description
Technical Field
[0001] The utility model relates to the technical field of photovoltaic components, in particular to a photovoltaic component. Background Art
[0002] The solar spectrum contains radiation with wavelengths of 300nm to 2400nm. Currently, solar cells can only use sunlight with a wavelength less than 1000nm. However, due to the high energy of ultraviolet light, it will cause changes in the interface of the heterojunction cell, resulting in light decay in efficiency. In order to solve this problem, ultraviolet cut-off film is usually used to cut off light with a wavelength less than 400nm. Although this solution can solve the light decay problem of current crystalline silicon cells, the cell efficiency cannot be maximized because ultraviolet light cannot be used. In addition, light conversion materials can be used to convert ultraviolet light into visible light. Such light conversion materials generally include typical light conversion materials such as organic fluorescent materials and quantum dots.
[0003] The prior art adopts a UV cutoff and UV conversion composite film solution, that is, the UV cutoff film is placed under the conversion film, the UV light is first converted by the conversion material, and then the remaining UV light is absorbed as much as possible by the UV cutoff. However, the existing UV conversion technology, whether it is organic conversion or quantum dot conversion technology, its highest conversion efficiency is still low for UV light utilization. Although quantum tailoring technology can achieve a higher conversion efficiency, its efficiency is low at high light intensity. Therefore, a solution is needed to improve the conversion efficiency of ultraviolet light in photovoltaic modules, while solving the light decay problem of solar cells, utilizing ultraviolet light as much as possible, thereby improving the efficiency of photovoltaic modules. Utility Model Content
[0004] Therefore, the utility model provides a photovoltaic module to solve the problem that the conversion efficiency of ultraviolet light in the existing photovoltaic modules is low and the ultraviolet light cannot be fully utilized, which limits the further improvement of the efficiency of the photovoltaic modules.
[0005] The utility model provides a photovoltaic component, comprising: a solar cell layer; a quantum cutting adhesive film, which is located on the light-receiving side surface of the solar cell layer; and an ultraviolet cut-off layer, which covers the side surface of the quantum cutting adhesive film away from the solar cell layer, and the ultraviolet light transmittance of the ultraviolet cut-off layer is 50% to 90%.
[0006] Optionally, the refractive index of the quantum tailoring film is greater than the refractive index of the ultraviolet cut-off layer.
[0007] Optionally, the photovoltaic module further comprises a first glass plate covering a side of the ultraviolet cutoff layer away from the solar cell layer;
[0008] Optionally, the refractive index of the UV cutoff layer is greater than or equal to the refractive index of the first glass plate.
[0009] Optionally, the refractive index of the quantum tailoring film is greater than 1.5;
[0010] The refractive index of the ultraviolet cut-off layer is less than or equal to 1.5;
[0011] The refractive index of the first glass plate is less than or equal to 1.5;
[0012] Optionally, the refractive index of the ultraviolet cutoff layer is 1.4-1.5.
[0013] Optionally, the thickness of the ultraviolet cutoff layer is 10 μm to 100 μm.
[0014] Optionally, the ultraviolet cutoff layer is a patterned hollow ultraviolet cutoff layer, the patterned hollow ultraviolet cutoff layer comprises a pattern area and a hollow area, and the transmittance of the patterned hollow ultraviolet cutoff layer is 50% to 90%.
[0015] Optionally, the hollow area is filled with the same material as the quantum tailoring film.
[0016] Optionally, the ultraviolet light transmittance of the ultraviolet cutoff layer is 80% to 90%.
[0017] The technical solution of the utility model has the following advantages:
[0018] (1) By adopting quantum tailoring technology, the absorption range of ultraviolet light sources is improved to achieve a higher ultraviolet light conversion efficiency; quantum tailoring film is formed by using Yb-doped quantum dot materials with quantum tailoring function, and its high quantum tailoring ability is utilized to improve the conversion efficiency of ultraviolet light.
[0019] (2) The UV cutoff layer is arranged above the quantum tailoring film, and the transmittance of the UV light is first controlled at 50% to 90% by the UV cutoff layer, and then the UV light is efficiently converted into visible light by the quantum tailoring film under appropriate light intensity. Although controlling the transmittance at 50% to 90% reduces the transmittance of a part of the UV light, the conversion efficiency of the remaining UV light by the quantum tailoring film can be maximized by controlling the light intensity. The visible light outputted from the part that is not absorbed by the cutoff after quantum tailoring can make up for the part that is cutoff, and because the efficiency of the quantum tailoring film is maximized, the amount of visible light converted from the part that is not absorbed by the cutoff can be greater than the output light amount of direct quantum tailoring without cutoff, and the overall utilization rate of the UV light is finally improved; while solving the light decay problem of photovoltaic cells, as much UV light as possible is transmitted, the conversion utilization rate of UV light is improved, and the efficiency of photovoltaic modules is thereby improved.
[0020] (3) By adopting a laminated design, a UV agent with a lower refractive index is selected as the cutoff layer (the refractive index is controlled to be less than or equal to 1.5, and greater than or equal to the first glass plate), and it is matched with a high refractive index quantum tailoring film (refractive index > 1.5) to achieve the effect of light gathering, thereby reducing light diffusion and reducing edge light loss. BRIEF DESCRIPTION OF THE DRAWINGS
[0021] In order to more clearly illustrate the specific implementation methods of the utility model or the technical solutions in the prior art, the drawings required for use in the specific implementation methods or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are some implementation methods of the utility model. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.
[0022] Figure 1 This is a schematic structural diagram of a photovoltaic module according to an embodiment of the utility model;
[0023] Figure 2 A schematic diagram of light refraction of a photovoltaic module according to an embodiment of the utility model;
[0024] Figure 3 This is a schematic structural diagram of another photovoltaic assembly according to an embodiment of the utility model;
[0025] Description of reference numerals:
[0026] 100 - second glass plate; 200 - solar cell layer; 300 - quantum tailoring film; 400 - ultraviolet cut-off layer; 500 - first glass plate. DETAILED DESCRIPTION
[0027] In order to solve the problem that the conversion efficiency of ultraviolet light in existing photovoltaic modules is low, ultraviolet light cannot be fully utilized, and the efficiency of photovoltaic modules is further improved, the utility model provides a photovoltaic module, including: a solar cell layer; a quantum tailoring film, which is located on the light-receiving side surface of the solar cell layer; and an ultraviolet cutoff layer, which covers the side surface of the quantum tailoring film away from the solar cell layer, and the ultraviolet light transmittance of the ultraviolet cutoff layer is 50% to 90%.
[0028] The technical solution of the utility model will be clearly and completely described below in conjunction with the accompanying drawings. Obviously, the described embodiments are part of the embodiments of the utility model, rather than all of the embodiments. Based on the embodiments in the utility model, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of the utility model. In the description of the utility model, it should be noted that the terms "first", "second" and "third" are used for descriptive purposes only and cannot be understood as indicating or implying relative importance.
[0029] refer to Figure 1 , this embodiment provides a photovoltaic module, including:
[0030] Solar cell layer 200;
[0031] The quantum tailoring adhesive film 300 is located on the light-receiving side surface of the solar cell layer 200;
[0032] The UV cutoff layer 400 covers the surface of the quantum tailoring film away from the solar cell layer 200 , and the UV cutoff layer 400 has a UV light transmittance of 50% to 90%, such as 90%, 80%, 70%, 60% or 50%.
[0033] In the existing light conversion technology, in order to balance the transmittance design, it is usually necessary to control the content of the light conversion agent at a certain level, which brings the problem that the ultraviolet light cannot be fully utilized, or the content of convertible ultraviolet light is greatly reduced. In addition, the efficiency of quantum clipping in quantum clipping technology is greatly affected by the light intensity, that is, when the light intensity is high, the quantum clipping efficiency is low, and when the light intensity is low, the quantum clipping efficiency is high. Therefore, how to control the transmittance of ultraviolet light and reduce the light intensity while increasing the content of convertible ultraviolet light is a key problem to be solved to improve the utilization rate of ultraviolet light.
[0034] This embodiment adopts quantum tailoring technology to increase the absorption range of ultraviolet light sources and improve the conversion efficiency of ultraviolet light; a quantum tailoring film is formed by using Yb-doped quantum dot material with quantum tailoring function, and its high quantum tailoring ability is used to improve the ultraviolet light conversion efficiency.
[0035] In this embodiment, the UV cut-off layer 400 is disposed above the quantum cutting film 300, and the transmittance of the UV light is first controlled at 50% to 90% by the UV cut-off layer 400, and then the UV light is efficiently converted into visible light by the quantum cutting film 300 under appropriate light intensity. Although controlling the transmittance at 50% to 90% reduces the transmittance of a part of the UV light, the efficiency of the quantum cutting film can be maximized by controlling the light intensity, and the visible light outputted from the part that is not cut off and absorbed after quantum cutting conversion can make up for the cut-off part, and because the efficiency of the quantum cutting film is maximized, the amount of visible light converted from the part that is not cut off and absorbed can be greater than the output light amount of direct quantum cutting without cutting, and finally the overall utilization rate of the UV light is improved; while solving the light decay problem of crystalline silicon cells, as much UV light as possible is transmitted, the conversion utilization rate of UV light is improved, and the efficiency of photovoltaic modules is thereby improved.
[0036] Furthermore, in this embodiment, the refractive index of the quantum tailoring film 300 is greater than the refractive index of the ultraviolet cut-off layer 400 .
[0037] In the prior art, photovoltaic films have a certain haze, indicating that photovoltaic films have a certain scattering effect, especially there is a refractive index mismatch problem between the UV cutoff layer and the UV conversion layer, and part of the light will be scattered to the edge of the glass, resulting in increased light loss.
[0038] This embodiment adopts a laminated design, selects a UV agent with a lower refractive index as a cut-off layer, and matches it with a quantum tailoring film with a high refractive index to achieve the effect of light gathering, thereby reducing light diffusion and edge light loss. Figure 2 shown.
[0039] In this embodiment, the material of the quantum dot with quantum tailoring function is Yb-doped quantum dot material. Specifically, Yb-doped quantum tailoring quantum dot material can be prepared by hot injection process, purified, fully mixed with film raw materials, and quantum tailoring film can be prepared by tape casting technology. Preferably, the Yb-doped quantum dot material includes Yb-doped CsPb (Br x Cl 1-x ) 3 ;
[0040] Furthermore, in this embodiment, the photovoltaic module further includes a first glass plate 500 covering the side of the UV cutoff layer 400 away from the solar cell layer 200. The UV cutoff layer 400 is a film layer formed by a UV cutoff agent on the surface of the first glass plate 500 facing away from the quantum tailoring film 300. In a specific implementation, the UV cutoff agent is applied to the inner side of the first glass plate 500, and its transmittance is controlled between 50% and 90%.
[0041] UV cut-off agents may be selected from materials such as zinc oxide, titanium dioxide, benzophenone compounds, oxybenzoate compounds, amino acid compounds, benzophenone compounds, oxybenzoylmethyl compounds, and aminobenzoate compounds.
[0042] In this embodiment, the photovoltaic module further includes a second glass plate 100 located on the backlight side surface of the solar cell layer 200 .
[0043] Furthermore, in this embodiment, the refractive index of the ultraviolet cutoff layer is greater than or equal to the refractive index of the first glass plate.
[0044] Further, in this embodiment, the refractive index of the quantum tailoring film 200 is greater than 1.5, such as 1.52, 1.58, 1.6, or 1.68;
[0045] The refractive index of the ultraviolet cutoff layer is less than or equal to 1.5; for example: 1.5, 1.46, 1.44, 1.38, 1.36;
[0046] The refractive index of the first glass plate is less than or equal to 1.5, for example: 1.5, 1.45, 1.42, 1.37, 1.35.
[0047] In specific implementation, the refractive index of the UV cutoff layer is controlled to be less than or equal to 1.5 and greater than or equal to the refractive index of the first glass plate, and then a high-refractive-index quantum tailoring film (refractive index > 1.5) is used to achieve the effect of light gathering, thereby reducing light diffusion and edge light loss.
[0048] Furthermore, in this embodiment, the refractive index of the ultraviolet cutoff layer 400 is 1.4-1.5, for example, 1.44 or 1.46.
[0049] Furthermore, in this embodiment, the thickness of the ultraviolet cutoff layer 400 is 10 μm to 100 μm, for example, 10 μm, 20 μm, 50 μm, 80 μm, or 100 μm.
[0050] When implementing it, Figure 1 As shown, by controlling the thickness of the ultraviolet cut-off layer 400 to 20 μm, the transmittance thereof is controlled to 90%.
[0051] Furthermore, in this embodiment, the UV cutoff layer 400 is a patterned hollow UV cutoff layer, which includes a pattern area and a hollow area, and has a transmittance of 50% to 90%, for example, 90%, 80%, 70%, 60% or 50%.
[0052] By designing a patterned hollow UV cutoff layer, the transmittance of the UV cutoff layer can be controlled at 50% to 90%. At the same time, the color difference between the UV cutoff layer and the quantum tailoring film can be used to achieve a patterned visual effect, which has a unique effect on the aesthetic design of photovoltaic modules.
[0053] Furthermore, in this embodiment, the hollow area is filled with the same material as the quantum tailoring film.
[0054] When implementing it, Figure 3As shown, the UV cutoff agent can be coated on the first glass plate to form a pattern area and a hollow part at the same time, and the hollow area is filled with the same material as the quantum cutting adhesive film, so that the overall transmittance of the patterned hollow UV cutoff layer is controlled at 50% to 90%. At this time, the patterned hollow UV cutoff layer as a whole includes a solid cutoff layer and a hollow part. Therefore, the light intensity transmitted by the UV cutoff layer 400 can maximize the quantum cutting efficiency of the quantum cutting adhesive film of the lower layer.
[0055] Further, in this embodiment, the ratio of the ultraviolet (UV) light source for the test is adjusted so that the ultraviolet light intensity of the test spectrum is close to the ultraviolet light intensity in the solar spectrum. At this time, the light conversion efficiency of the quantum tailoring film is about 140%. A UV cutoff layer with a transmittance of 90% is used to block the light path, so that the ultraviolet light intensity reaching the quantum tailoring film is reduced by 10%. It is found that the light conversion efficiency of the quantum tailoring film is increased to 165%. Test conditions: Using a Xipu spectrometer, the ultraviolet light intensity in the solar spectrum is simulated by adjusting the ratio of the ultraviolet light source to 20%. The quantum tailoring film is a quantum tailoring film with Yb-doped perovskite quantum dots added, and the ultraviolet cutoff layer is a UV cutoff layer with benzophenone, hydroxybenzophenone, and ultraviolet cutoff agent added. The thickness of the ultraviolet cutoff layer is controlled at 20μm.
[0056] In different embodiments, the UV cut-off agent may be coated on the first photovoltaic glass 500 to form another patterned UV cut-off layer 400 , so that its transmittance is controlled at 50% to 90%, which is not limited in this embodiment.
[0057] Furthermore, in this embodiment, the ultraviolet light transmittance of the ultraviolet cutoff layer is 80% to 90%, for example, 80%, 85%, 88%, or 90%.
[0058] It should be noted that, since the quantum tailoring efficiency of the quantum tailoring film will be affected by environmental factors, such as the intensity of ultraviolet light in the incident light, compared with the prior art in which no ultraviolet cutoff layer is provided before the ultraviolet light conversion layer, the design of the utility model does not always improve the photoelectric conversion efficiency of the photovoltaic cell, but needs to be used in a suitable application scenario to exert a beneficial effect. For example, when the ultraviolet light intensity in the incident light exceeds the cutting ability of the quantum tailoring film, the ultraviolet light intensity reaching the quantum tailoring film is appropriately reduced by the ultraviolet cutoff layer to improve the light conversion efficiency of the quantum tailoring film, and the ultraviolet photons in the incident light can be used to convert more visible photons or infrared photons, thereby improving the photoelectric conversion efficiency of the battery.
[0059] Obviously, the above embodiments are merely examples for the purpose of clear explanation, and are not intended to limit the implementation methods. For those skilled in the art, other different forms of changes or modifications can be made based on the above description. It is not necessary and impossible to list all the implementation methods here. The obvious changes or modifications derived therefrom are still within the scope of protection of the invention of the utility model.
Claims
1. A photovoltaic module, characterized in that: include: Solar cell layer; A quantum tailoring adhesive film is located on the light-receiving side surface of the solar cell layer; The ultraviolet cut-off layer covers the surface of the quantum tailoring film on one side away from the solar cell layer, and the ultraviolet light transmittance of the ultraviolet cut-off layer is 50% to 90%.
2. The photovoltaic module according to claim 1, characterized in that: The refractive index of the quantum tailoring adhesive film is greater than the refractive index of the ultraviolet cut-off layer.
3. The photovoltaic module according to claim 1, characterized in that: The photovoltaic module further comprises a first glass plate covering a side of the ultraviolet cut-off layer away from the solar cell layer.
4. The photovoltaic module according to claim 3, characterized in that: The refractive index of the ultraviolet cutoff layer is greater than or equal to the refractive index of the first glass plate.
5. The photovoltaic module according to claim 3, characterized in that: The refractive index of the quantum tailoring film is greater than 1.5; The refractive index of the ultraviolet cut-off layer is less than or equal to 1.5; The refractive index of the first glass plate is less than or equal to 1.
5.
6. The photovoltaic module according to claim 5, characterized in that: The refractive index of the ultraviolet cutoff layer is 1.4-1.
5.
7. The photovoltaic module according to claim 6, characterized in that: The thickness of the ultraviolet cut-off layer is 10 μm to 100 μm.
8. The photovoltaic module according to claim 7, characterized in that: The ultraviolet cutoff layer is a patterned hollow ultraviolet cutoff layer; the patterned hollow ultraviolet cutoff layer comprises a pattern area and a hollow area, and the transmittance of the patterned hollow ultraviolet cutoff layer is 50% to 90%.
9. The photovoltaic module according to claim 8, characterized in that: The hollow area is filled with the same material as the quantum tailoring adhesive film.
10. The photovoltaic module according to claim 1, characterized in that: The ultraviolet light transmittance of the ultraviolet cut-off layer is 80% to 90%.