Semiconductor test system

Abstract

The utility model belongs to the technical field of semiconductor testing, and aims to provide a semiconductor testing system. The utility model discloses a semiconductor test system which comprises a master control module, a laser emission module, a capacitive sensor and a sampling signal processing module. In the implementation process, the laser emission module emits the pulsed light to the tested piece, so that the square resistance of the tested piece is measured through the reflected pulsed light of the tested piece, direct contact with the tested piece in the testing process can be avoided, the problem that the tested piece is damaged is avoided, the integrity of the tested piece in the testing process is ensured, and the testing efficiency is improved. And meanwhile, the semiconductor test system can be prevented from being damaged, so that the test accuracy of the semiconductor test system is more stable in long-term use, the repeatability is better, and the semiconductor test system has popularization and application values.

Description

Technical Field

[0001] The utility model belongs to the technical field of semiconductor testing, and in particular relates to a semiconductor testing system. Background Art

[0002] Various important tests must be performed on semiconductors to determine their suitability for further device processing or process adjustments. Semiconductor testing typically involves measuring doping concentration, charge retention time, and minority carrier lifetime. In the prior art, a four-probe tester is typically used to measure the square resistance of semiconductors. However, in the process of using this prior art, the inventors discovered that this prior art has at least the following problems:

[0003] Existing four-probe testers use contact measurement. Therefore, when measuring semiconductors with a four-probe tester, the probes must be inserted into the semiconductor surface, which inevitably causes irreversible damage to the semiconductor surface. Furthermore, prolonged use of a four-probe tester can lead to contamination, oxidation, and wear on the probe surfaces, causing changes in the probe surface resistance and causing deformation and fatigue of the probe material, thus affecting the accuracy of the measurement results. Utility Model Content

[0004] The present utility model aims to solve the above technical problems at least to a certain extent, and provides a semiconductor testing system.

[0005] In order to achieve the above purpose, the utility model adopts the following technical solutions:

[0006] The utility model provides a semiconductor testing system, comprising a main control module, a laser emitting module, a capacitive sensor, a sampling signal processing module and a host computer; the controlled end of the laser emitting module and the signal output end of the sampling signal processing module are both electrically connected to the main control module, the main control module is communicatively connected to the host computer, and the signal output end of the capacitive sensor is electrically connected to the signal receiving end of the sampling signal processing module; the laser emitting module and the capacitive sensor are both provided in two groups, the two groups of capacitive sensors are arranged opposite to each other, and the two groups of laser emitting modules are respectively located on opposite sides of the two groups of capacitive sensors.

[0007] In one possible design, the laser emission module includes a power amplification module, a laser driving module and a laser; the controlled end of the power amplification module is electrically connected to the main control module, and the output end of the power amplification module is electrically connected to the laser through the laser driving module.

[0008] In one possible design, the semiconductor testing system further includes a laser power detection device, which is electrically connected to the main control module.

[0009] In one possible design, the semiconductor testing system further includes an ultrasonic ranging module, and a controlled end of the ultrasonic ranging module is electrically connected to the main control module.

[0010] In one possible design, the sampling signal processing module includes a signal amplification module, a differential conversion module and an analog-to-digital conversion module; the signal input end of the signal amplification module is electrically connected to the signal output end of the capacitive sensor, the signal output end of the signal amplification module is electrically connected to the signal receiving end of the differential conversion module, the signal output end of the differential conversion module is electrically connected to the signal input end of the analog-to-digital conversion module, and the signal output end of the analog-to-digital conversion module is electrically connected to the main control module as the signal output end of the sampling signal processing module.

[0011] In one possible design, the semiconductor testing system further includes a light flux detection module; the light flux detection module is electrically connected to the main control module.

[0012] In one possible design, the semiconductor testing system further includes a temperature detection module; the temperature detection module is electrically connected to the main control module.

[0013] In one possible design, the semiconductor testing system also includes a shell and a light guide, and the light guide and the capacitive sensor are both fixedly arranged on the shell; the emitting end of the laser emitting module is arranged in contact with one end of the light guide, and the other end of the light guide is arranged through the shell, and the detection end of the capacitive sensor is arranged through the shell, and the other end of the light guide and the detection end of the capacitive sensor are oriented in the same direction.

[0014] The beneficial effects of the utility model are:

[0015] The present invention can avoid damage to the device under test, and at the same time, the test accuracy is more stable and the repeatability is better during long-term use. Specifically, the present invention includes a main control module, a laser emission module, a capacitive sensor and a sampling signal processing module. During the implementation of the present invention, the main control module can drive the laser emission module to operate when receiving a square resistance test instruction; the laser emission module can emit pulse light to the device under test under the drive of the main control module; the capacitive sensor can obtain a surface photovoltage according to the reflected pulse light generated by the device under test when the laser emission module emits pulse light to the device under test, and obtain a first voltage Vin and a second voltage Vout according to the surface photovoltage, and then send the first voltage Vin and the second voltage Vout to the sampling signal processing module; the sampling signal processing module can obtain the square resistance value of the device under test according to the first voltage Vin and the second voltage Vout, and then send the square resistance value to the main control module, thereby realizing the square resistance measurement of the device under test. During this process, since pulse light is emitted to the device under test through the laser emission module, and the square resistance of the device under test is measured by the reflected pulse light of the device under test, direct contact with the device under test can be avoided during the test, thereby avoiding the problem of damage to the device under test and ensuring the integrity of the device under test during the test; in addition, since the utility model realizes non-destructive testing of the device under test, it can avoid damage to the semiconductor test system in the utility model, so that the test accuracy of the semiconductor test system is more stable and the repeatability is better during long-term use, and it has the value of promotion and application.

[0016] Other beneficial effects of the present invention will be further described in the specific implementation manner. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] Figure 1 is a module block diagram of the semiconductor test system in Example 1;

[0018] Figure 2 is a schematic structural diagram of the semiconductor testing system in Example 1;

[0019] Among them, 1-main control module; 2-laser emission module; 3-capacitive sensor; 4-sampling signal processing module; 5-host computer; 6-laser power detection device; 7-ultrasonic ranging module; 8-luminous flux detection module; 9-temperature detection module; 10-housing; 11-light guide. DETAILED DESCRIPTION

[0020] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the present invention will be briefly introduced below in conjunction with the drawings and the description of the embodiments or the prior art. Obviously, the following description of the structures of the drawings is only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative work. It should be noted that the description of these embodiments is used to help understand the present invention, but does not constitute a limitation of the present invention.

[0021] Example 1:

[0022] like Figure 1 and Figure 2 As shown, this embodiment discloses a semiconductor testing system, including a main control module 1, a laser emitting module 2, a capacitive sensor 3, a sampling signal processing module 4 and a host computer 5; the controlled end of the laser emitting module 2 and the signal output end of the sampling signal processing module 4 are both electrically connected to the main control module 1, the main control module 1 is communicatively connected to the host computer 5, and the signal output end of the capacitive sensor 3 is electrically connected to the signal receiving end of the sampling signal processing module 4; the laser emitting module 2 and the capacitive sensor 3 are each provided with two groups, the two groups of capacitive sensors 3 are arranged opposite to each other, the two groups of laser emitting modules 2 are respectively located on opposite sides of the two groups of capacitive sensors 3, and the centers of the two groups of laser emitting modules 2 and the two groups of capacitive sensors 3 are the same. Specifically, in this embodiment, the center of the plane formed by the two groups of laser emitting modules 2 coincides with the center of the plane formed by the two groups of capacitive sensors 3.

[0023] It should be understood that in this embodiment, the host computer 5 can send a square resistance test instruction, a distance detection instruction, a reflectivity detection instruction, and / or a temperature detection instruction to the main control module 1 according to the test requirements. In addition, when the main control module 1 receives the test results such as the square resistance value, it can also send the test results to the host computer 5 for visual display to achieve an intuitive display of the test results.

[0024] Specifically, in this embodiment, the main control module 1 is used to drive the laser emission module 2 to operate when receiving a square resistance test instruction;

[0025] The laser emitting module 2 is used to emit pulsed light to the device under test under the drive of the main control module 1; specifically, during the implementation of this embodiment, the laser emitting module 2 irradiates the pulsed light vertically onto the device under test, thereby facilitating improving the accuracy of the test results.

[0026] The capacitive sensor 3 is used to obtain a surface photovoltage based on the reflected pulse light generated by the device under test when the laser emitting module 2 emits pulse light to the device under test, and obtain a first voltage Vin and a second voltage Vout based on the surface photovoltage, and then send the first voltage Vin and the second voltage Vout to the sampling signal processing module 4; specifically, during the implementation of this embodiment, the capacitive sensor 3 sends the first voltage Vin and the second voltage Vout to the sampling signal processing module 4 through a coaxial cable.

[0027] The sampling signal processing module 4 is configured to obtain the square resistance value of the device under test according to the first voltage Vin and the second voltage Vout, and then send the square resistance value to the main control module 1 .

[0028] It should be noted that when the laser emitting module 2 emits pulsed light to the device under test, the device under test will generate surface photovoltage, and the value of the surface photovoltage is normally distributed. The corresponding middle value of the normal distribution graph is the first voltage Vin, and the value at the specified position on the edge of the normal distribution graph is the second voltage Vout. When the distance, power and frequency between the laser emitting module 2 and the device under test are constant, the size of the surface photovoltage of the device under test represents the size of the square resistance of the device under test, and thus the value of the square resistance can be determined by detecting the size of the photovoltage.

[0029] Specifically, in this embodiment, the capacitive sensor 3 includes a photoelectric sensor and a capacitor, and the photoelectric sensor is connected in parallel with the capacitor. In addition, to improve the detection effect of the device under test, in this embodiment, the photoelectric sensor adopts a sheet structure. During the testing process of the device under test, the photoelectric sensor is placed parallel to the device under test. In addition, in this embodiment, the sampling signal processing module 4 can calculate the square resistance value of the device under test by linear fitting based on the difference between the coil radii of the two capacitors in the pre-stored capacitive sensor 3, as well as the first voltage Vin and the second voltage Vout.

[0030] It should be noted that, during the implementation of this embodiment, the distance between the DUT and the housing 10 of the semiconductor test system is greater than 1-2 mm, and the semiconductor test system tests the DUT through near-field induction.

[0031] This embodiment can avoid damage to the device under test, and at the same time, the test accuracy is more stable and the repeatability is better during long-term use. Specifically, this embodiment includes a main control module 1, a laser emission module 2, a capacitive sensor 3 and a sampling signal processing module 4. During the implementation of this embodiment, the main control module 1 can drive the laser emission module 2 to operate when receiving a square resistance test instruction; the laser emission module 2 can emit pulse light to the device under test under the drive of the main control module 1; the capacitive sensor 3 can obtain a surface photovoltage according to the reflected pulse light generated by the device under test when the laser emission module 2 emits pulse light to the device under test, and obtain a first voltage Vin and a second voltage Vout according to the surface photovoltage, and then send the first voltage Vin and the second voltage Vout to the sampling signal processing module 4; the sampling signal processing module 4 can obtain the square resistance value of the device under test according to the first voltage Vin and the second voltage Vout, and then send the square resistance value to the main control module 1, thereby achieving square resistance measurement of the device under test. During this process, since pulse light is emitted to the device under test through the laser emission module 2, and the square resistance of the device under test is measured by the reflected pulse light of the device under test, direct contact with the device under test can be avoided during the test, thereby avoiding the problem of damage to the device under test and ensuring the integrity of the device under test during the test; in addition, since this embodiment realizes non-destructive testing of the device under test, it can also avoid damage to the semiconductor test system in this embodiment, so that the test accuracy of the semiconductor test system is more stable and repeatable during long-term use, and it has the value of promotion and application.

[0032] Specifically, in this embodiment, the laser emission module 2 includes a power amplifier module, a laser driver module, and a laser; the controlled end of the power amplifier module is electrically connected to the main control module 1, and the output end of the power amplifier module is electrically connected to the laser through the laser driver module. It should be noted that in this embodiment, under the drive of the main control module 1, the power amplifier module can amplify the input signal and transmit the amplified signal to the laser driver module, so that the laser driver module generates a pulse power supply and emits pulsed light toward the device under test through the laser.

[0033] Furthermore, in order to ensure that the laser can stably emit pulsed light, the semiconductor test system in this embodiment further includes a laser power detection device 6, which is electrically connected to the main control module 1; wherein,

[0034] The laser power detection device 6 is used to detect the power of the laser, obtain the laser power, and send the laser power to the main control module 1;

[0035] The main control module 1 is also used to determine whether the laser power is less than the power threshold. If so, it is determined that the laser power is attenuated and a power increase instruction is sent to the power amplification module in the laser emission module 2 so that the laser emission module 2 increases the emission power of the pulsed light.

[0036] It should be noted that the provision of the laser power detection device 6 can ensure the stability of the laser power, thereby improving the stability of the semiconductor test system in this embodiment during long-term operation, making the semiconductor test system in this embodiment more repeatable.

[0037] To achieve distance testing for semiconductors, this embodiment further makes the following improvements:

[0038] In this embodiment, the semiconductor testing system further includes an ultrasonic distance measuring module 7, and a controlled end of the ultrasonic distance measuring module 7 is electrically connected to the main control module 1;

[0039] The main control module 1 is further configured to drive the ultrasonic ranging module 7 to operate upon receiving a distance detection instruction, so that the ultrasonic ranging module 7, under the drive of the main control module 1, transmits ultrasonic waves to the device under test, receives reflected ultrasonic signals from the device under test, and then transmits the reflected ultrasonic signals back to the main control module 1; the main control module 1 is further configured to obtain a test distance of the device under test based on the reflected ultrasonic signals.

[0040] Specifically, the ultrasonic ranging module 7 includes an ultrasonic transmitting module and an ultrasonic receiving module, each electrically connected to the main control module 1. The amplitude and phase between the ultrasonic signal sent by the ultrasonic ranging module 7 to the device under test and the reflected ultrasonic signal reflected back by the device under test will change according to the distance of the device under test. Based on this, in this embodiment, the main control module 1 can obtain the ultrasonic phase shift according to the reflected ultrasonic signal, and thereby obtain the distance between this embodiment and the device under test, that is, the test distance.

[0041] In addition, in this embodiment, when measuring the distance of the device under test, the following scheme can also be adopted: the photoelectric sensor in the capacitive sensor 3 can also receive the pulse light reflected by the device under test and convert it into an electrical signal carrying the pulse light reception time, thereby facilitating the main control module 1 to obtain the distance between the current semiconductor test system and the device under test, that is, the test distance of the device under test, based on the pulse light emission rate, pulse light reception time and pulse light emission time.

[0042] Specifically, in this embodiment, the sampling signal processing module 4 includes a signal amplification module, a differential conversion module and an analog-to-digital conversion module; the signal input end of the signal amplification module is electrically connected to the signal output end of the capacitive sensor 3, the signal output end of the signal amplification module is electrically connected to the signal receiving end of the differential conversion module, the signal output end of the differential conversion module is electrically connected to the signal input end of the analog-to-digital conversion module, and the signal output end of the analog-to-digital conversion module is electrically connected to the main control module 1 as the signal output end of the sampling signal processing module 4;

[0043] When the sampling signal processing module 4 receives the first voltage Vin and the second voltage Vout, the signal amplification module is used to perform signal amplification processing on the first voltage Vin and the second voltage Vout to obtain an amplified first voltage and an amplified second voltage, and then send the amplified first voltage and the amplified second voltage to the differential conversion module;

[0044] The differential conversion module is used to convert the amplified first voltage and the amplified second voltage into a single-ended signal, and then send the single-ended signal to the analog-to-digital conversion module; it should be noted that the amplified first voltage and the amplified second voltage constitute a differential signal, which can be converted into a single-ended signal under the processing of the differential conversion module to facilitate subsequent transmission and processing of the signal, thereby ensuring normal transmission and accurate interpretation of the signal.

[0045] The analog-to-digital conversion module is used to perform analog-to-digital conversion on the single-ended signal to obtain a converted single-ended signal, then obtain the square resistance value of the device under test based on the converted single-ended signal, and finally send the square resistance value to the main control module 1.

[0046] It should be noted that the manufacturing process of semiconductors usually includes an important process of texturing on their surfaces, and the quality of the texturing results directly affects the service life of the finished semiconductor cell. Based on this, since the reflectivity of the semiconductor can directly reflect the texturing effect, in order to achieve the test of the semiconductor texturing effect, this embodiment further makes the following improvements: the semiconductor test system also includes a light flux detection module 8; the light flux detection module 8 is electrically connected to the main control module 1; wherein,

[0047] The main control module 1 is further configured to drive the laser emission module 2 to operate upon receiving a reflectivity detection instruction, so that the laser emission module 2 emits pulsed light toward the device under test under the drive of the main control module 1;

[0048] The luminous flux detection module 8 is used to obtain luminous flux based on the reflected pulse light generated by the device under test when the laser emission module 2 emits pulse light to the device under test, and send the luminous flux to the main control module 1 so that the main control module 1 can obtain the reflectivity of the device under test based on the luminous flux.

[0049] It should be noted that when pulsed light is emitted onto the DUT, luminous flux detection module 8 can obtain luminous flux based on the reflected pulsed light generated by the DUT. This luminous flux can represent the DUT's reflectivity coefficient. Based on the configuration of luminous flux detection module 8, reflectivity detection of the DUT can be performed, thereby expanding the test range of semiconductor test systems.

[0050] To achieve temperature testing of semiconductors, this embodiment further makes the following improvements:

[0051] The semiconductor test system further includes a temperature detection module 9; the temperature detection module 9 is electrically connected to the main control module 1; wherein,

[0052] The main control module 1 is used to drive the temperature detection module 9 to perform temperature detection on the device under test when receiving a temperature detection instruction, so that the temperature detection module 9 obtains the temperature data of the device under test, and then sends the temperature data to the main control module 1 through the sampling signal processing module 4.

[0053] Based on the above content, this embodiment can realize the square resistance test, distance test, surface reflectivity test and temperature test functions of semiconductors. The test range is wider and can be applied to different test needs of users, which has the value of promotion and application.

[0054] In addition, in this embodiment, the semiconductor test system further includes a housing 10 and a light guide 11. The light guide 11, the capacitive sensor 3 and the ultrasonic ranging module 7 are all fixedly arranged on the housing 10. Specifically, in this embodiment, the laser of the laser emitting module 2 is fixedly arranged on the housing 10; the emitting end of the laser emitting module 2 is fitted with one end of the light guide 11, and the other end of the light guide 11 is arranged through the housing 10. The ultrasonic ranging module 7 ( Figure 2 The emitting end of the ultrasonic ranging module 7 (not shown) and the detecting end of the capacitive sensor 3 are arranged through the housing 10, and the other end of the light guide 11, the emitting end of the ultrasonic ranging module 7 and the detecting end of the capacitive sensor 3 are oriented in the same direction; two groups of ultrasonic ranging modules 7 are provided, and two light guides 11 are also provided to match the two groups of ultrasonic ranging modules 7.

[0055] It should be understood that, in this embodiment, the main control module 1, the sampling signal processing module 4, the luminous flux detection module 8 and the temperature detection module 9 are also fixedly arranged on the housing 10, and the detection end of the luminous flux detection module 8 and the detection end of the temperature detection module 9 are oriented in the same direction as the detection end of the capacitive sensor 3, so as to simultaneously realize the luminous flux and temperature detection of the measured object.

[0056] Specifically, in this embodiment, the emitting end of the laser serves as the emitting end of the laser emitting module 2 and is fitted to one end of the light guide 11, and the other end of the light guide 11 is provided through the housing 10. In this embodiment, the light guide 11 is made of high-transmittance quartz glass, which has technical advantages such as high light transmittance, low attenuation, high temperature resistance, corrosion resistance, and high mechanical strength. In addition, in this embodiment, the spectrum of the laser can be any spectrum in nature, and the emission spectrum of the laser can be selected according to the characteristics of the device under test, which is not limited here; the surface of the light guide 11 can be coated according to the emission spectrum of the laser to increase its transmittance.

[0057] Example 2:

[0058] This embodiment discloses a working method of the semiconductor test system as described in Embodiment 1, comprising:

[0059] When the main control module 1 receives the square resistance test instruction, it drives the laser emission module 2 to operate;

[0060] The laser emission module 2 emits pulse light toward the device under test under the drive of the main control module 1;

[0061] When the laser emitting module 2 emits pulse light to the device under test, the capacitive sensor 3 obtains a surface photovoltage according to the reflected pulse light generated by the device under test, and obtains a first voltage Vin and a second voltage Vout according to the surface photovoltage, and then sends the first voltage Vin and the second voltage Vout to the sampling signal processing module 4;

[0062] The sampling signal processing module 4 obtains the square resistance value of the device under test according to the first voltage Vin and the second voltage Vout, and then sends the square resistance value to the main control module 1 .

[0063] In addition, to implement distance testing of the device under test, the method in this embodiment further includes:

[0064] When the main control module 1 receives the distance detection instruction, it drives the ultrasonic ranging module 7 to operate, so that the ultrasonic ranging module 7, under the drive of the main control module 1, transmits ultrasonic waves to the device under test, receives the reflected ultrasonic signal reflected by the device under test, and then transmits the reflected ultrasonic signal back to the main control module 1; the main control module 1 is also used to obtain the test distance of the device under test based on the reflected ultrasonic signal.

[0065] Furthermore, to implement reflectivity testing of the device under test, the method in this embodiment further includes:

[0066] When the main control module 1 receives the reflectivity detection instruction, it drives the laser emission module 2 to operate, so that the laser emission module 2 emits pulse light to the device under test under the drive of the main control module 1;

[0067] When the laser emission module 2 emits pulse light to the device under test, the luminous flux detection module 8 obtains luminous flux based on the reflected pulse light generated by the device under test, and sends the luminous flux to the main control module 1 so that the main control module 1 obtains the reflectivity of the device under test based on the luminous flux.

[0068] Furthermore, to implement temperature testing of the device under test, the method in this embodiment further includes:

[0069] When receiving the temperature detection instruction, the main control module 1 drives the temperature detection module 9 to perform temperature detection on the device under test, so that the temperature detection module 9 obtains the temperature data of the device under test, and then sends the temperature data to the main control module 1 through the sampling signal processing module 4.

[0070] It should be noted that the working details and technical effects of the working method of the semiconductor testing system provided in this embodiment 2 can be found in embodiment 1 and will not be described in detail here.

[0071] Finally, it should be noted that the above embodiments are intended only to illustrate the technical solutions of the present invention, and are not intended to limit the present invention. Although the present invention has been described in detail with reference to the above embodiments, those skilled in the art should understand that they may modify the technical solutions described in the above embodiments, or replace some of the technical features therein with equivalents. However, such modifications or replacements do not deviate from the spirit and scope of the technical solutions of the various embodiments of the present invention.

Claims

1. A semiconductor testing system, characterized in that: The invention comprises a main control module (1), a laser emission module (2), a capacitive sensor (3), a sampling signal processing module (4) and a host computer (5); the controlled end of the laser emission module (2) and the signal output end of the sampling signal processing module (4) are both electrically connected to the main control module (1), the main control module (1) is communicatively connected to the host computer (5), and the signal output end of the capacitive sensor (3) is electrically connected to the signal receiving end of the sampling signal processing module (4); the laser emission module (2) and the capacitive sensor (3) are both provided in two groups, the two groups of capacitive sensors (3) are arranged opposite to each other, and the two groups of laser emission modules (2) are respectively located on opposite sides of the two groups of capacitive sensors (3).

2. A semiconductor testing system according to claim 1, characterized in that: The laser emission module (2) comprises a power amplifier module, a laser driving module and a laser; the controlled end of the power amplifier module is electrically connected to the main control module (1), and the output end of the power amplifier module is electrically connected to the laser through the laser driving module.

3. A semiconductor testing system according to claim 2, characterized in that: The semiconductor testing system further comprises a laser power detection device (6), and the laser power detection device (6) is electrically connected to the main control module (1).

4. A semiconductor testing system according to claim 1, characterized in that: The semiconductor testing system further comprises an ultrasonic distance measuring module (7), wherein a controlled end of the ultrasonic distance measuring module (7) is electrically connected to the main control module (1).

5. A semiconductor testing system according to claim 1, characterized in that: The sampling signal processing module (4) comprises a signal amplification module, a differential conversion module and an analog-to-digital conversion module; the signal input end of the signal amplification module is electrically connected to the signal output end of the capacitive sensor (3), the signal output end of the signal amplification module is electrically connected to the signal receiving end of the differential conversion module, the signal output end of the differential conversion module is electrically connected to the signal input end of the analog-to-digital conversion module, and the signal output end of the analog-to-digital conversion module is electrically connected to the main control module (1) as the signal output end of the sampling signal processing module (4).

6. A semiconductor testing system according to claim 1, characterized in that: The semiconductor testing system further comprises a light flux detection module (8); the light flux detection module (8) is electrically connected to the main control module (1).

7. A semiconductor testing system according to claim 1, characterized in that: The semiconductor testing system further comprises a temperature detection module (9); the temperature detection module (9) is electrically connected to the main control module (1).

8. A semiconductor testing system according to claim 1, characterized in that: The semiconductor testing system further comprises a housing (10) and a light guide (11); the light guide (11) and the capacitive sensor (3) are both fixedly arranged on the housing (10); the emitting end of the laser emitting module (2) is arranged in contact with one end of the light guide (11), the other end of the light guide (11) is arranged through the housing (10), the detection end of the capacitive sensor (3) is arranged through the housing (10), and the other end of the light guide (11) and the detection end of the capacitive sensor (3) are arranged in the same direction.

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