Integrated device with thin film transistor device

Abstract

The utility model discloses an integrated device with a thin film transistor device, and relates to the technical field of electronic devices. Comprising a substrate, a sensor, a thin film transistor and a touch screen, the lower surface of the substrate extends upwards to form a groove-shaped structure, the sensor is arranged in the groove-shaped structure, the sensor is connected with the thin film transistor on the upper surface through a via hole, and the touch screen is connected above the thin film transistor. According to the integrated device, the thin film transistor is connected with the sensor through the via hole, so that the information feedback rate of the sensor can be improved, the current transmission of the thin film transistor and the direct contact between the touch screen and the thin film transistor are increased, the thin film transistor can feed back touch information quickly in real time, conduction is conducted timely and accurately, and page operation is facilitated; the structural design is simple, the transistor is made of the thin film layer, smaller size and lighter weight can be realized, and the use flexibility and universality are improved.

Description

Technical Field

[0001] The utility model relates to the technical field of electronic devices, in particular to an integrated device with a thin film transistor device. Background Art

[0002] Traditional integrated devices usually use traditional electronic components and switch control, with limited functions and cannot be flexibly adjusted. Therefore, there are certain limitations in practical applications. With the continuous development of thin film transistor technology, thin film transistors have been applied to integrated devices. Thin film transistor devices have the advantages of small size, low power consumption, and high control accuracy, providing new possibilities for the function expansion and performance improvement of integrated devices.

[0003] Current thin film transistor integrated devices have problems such as limited functional scalability, complex manufacturing process and unfriendly operation interface in practical applications. Therefore, there is a need to provide an improved thin film transistor enhanced integrated device to provide better performance and user experience. Utility Model Content

[0004] The utility model aims to provide an integrated device with a thin film transistor device to solve the problems raised in the above background technology.

[0005] In order to solve the above technical problems, the utility model provides the following technical solutions: an integrated device with a thin film transistor device, including a substrate, a sensor, a thin film transistor and a touch screen, wherein the lower surface of the substrate extends upward to form a groove-like structure, the sensor is arranged in the groove-like structure, the sensor is connected to the thin film transistor on the upper surface through a via hole, and a touch screen is connected above the thin film transistor.

[0006] Preferably, an etching stop layer is provided on the upper surface of the substrate.

[0007] Preferably, the via hole is arranged at the bottom of the groove structure and penetrates the etching stop layer.

[0008] Preferably, the thin film transistor is connected to the sensor via a pad that penetrates the through hole.

[0009] Preferably, the touch screen is arranged above the thin film transistor and connected to the source and drain of the thin film transistor.

[0010] Preferably, a glass cover plate is arranged above the touch screen.

[0011] Preferably, the source and drain of the thin film transistor are connected to the touch screen.

[0012] Preferably, at least one group of the thin film transistors has a built-in battery disposed between adjacent thin film transistors.

[0013] Preferably, the sensor is a multifunctional sensor integrating a temperature sensor, a humidity sensor and a light sensor.

[0014] Beneficial effects of the utility model: the integrated device thin film transistor and the sensor in the present solution are connected through vias, which can improve the information feedback rate of the sensor and increase the current transmission of the thin film transistor. The direct contact between the touch screen and the thin film transistor is conducive to the thin film transistor to quickly feedback touch information in real time, conduct it in a timely and accurate manner, and facilitate page operation. In addition, the structure is simple in design, and the transistor is manufactured using a thin film layer, which can achieve a smaller size and lighter weight, increasing flexibility and wide range of use. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] Figure 1 It is a schematic diagram of the overall structure of the integrated device.

[0016] The reference numerals in the figure are: substrate 1, etching stop layer 2, gate 3, source 4, touch screen 5, drain 6, glass cover 7, built-in battery 8, sensor 9, via 10, groove structure 11, pad 12. DETAILED DESCRIPTION

[0017] In the following description, a large number of specific details are given to provide a more thorough understanding of the utility model. However, it is obvious to those skilled in the art that the utility model can be implemented without one or more of these details. In other examples, in order to avoid confusion with the utility model, some technical features known in the art are not described.

[0018] Reference Figure 1 The present invention provides an integrated device with a thin film transistor device, including a substrate 1, the lower surface of the substrate 1 extends upward to form a groove structure 11, a sensor 9 is stored in the groove structure 11, the sensor 9 is configured with a temperature sensor, a humidity sensor, a light sensor, etc., for real-time detection of environmental parameters, and transmitting data to a thin film transistor control module for processing and adjustment, the sensor 9 passes through a via 10 on the substrate 1 through a metal material pad 12, and is connected to a gate 3, the via 10 passes through the substrate 1, the etching barrier layer 2 and the gate 3, this connection structure can speed up the transmission of information, the thin film transistor feeds back the information in the sensor 9 in real time through the connection structure, controls the current switch, realizes component control and signal processing, and realizes automatic control and intelligent adaptation.

[0019] An etch stop layer 2 is deposited on the upper surface of the substrate 1. The etch stop layer 2 is an organic material. The gate 3 is deposited on the upper surface of the etch stop layer 2 and is formed into a shape and size matching the substrate 1 through a photolithography process. The source 4 and drain 6 on the gate 3 are in direct contact with the touch screen 5 to improve signal processing efficiency. The upper surface of the touch screen 5 is covered with a glass cover plate 7 to provide protection and support.

[0020] The integrated device contains at least two groups of thin-film transistor devices, which are composed of thin-film semiconductor materials and metal electrodes. The current transmission is regulated by controlling the gate 3 voltage, thereby achieving accurate control of other components. A built-in battery is also provided between two adjacent groups of thin-film transistor devices to supply appropriate voltage and current for power supply according to the needs of the device.

[0021] The device has a shell made of plastic or metal material on the outside, which provides protection and support, accommodates internal components and facilitates carrying or installation.

[0022] As described above, although the present invention has been shown and described with reference to specific preferred embodiments, it should not be interpreted as limiting the present invention itself. Various changes can be made to it in form and detail without departing from the spirit and scope of the present invention defined in the appended claims.

Claims

1. An integrated device having a thin film transistor device, characterized in that The invention comprises a substrate, a sensor, a thin film transistor and a touch screen. The lower surface of the substrate extends upward to form a groove structure. The sensor is arranged in the groove structure. The sensor is connected to the thin film transistor on the upper surface through a via hole. The touch screen is connected above the thin film transistor.

2. The integrated device having a thin film transistor device according to claim 1, characterized in that: An etching stop layer is arranged on the upper surface of the substrate.

3. The integrated device having a thin film transistor device according to claim 1, characterized in that: The via hole is arranged at the bottom of the groove structure and penetrates the etching stop layer.

4. The integrated device having a thin film transistor device according to claim 1, characterized in that: The thin film transistor is connected to the sensor via a pad that penetrates the through hole.

5. The integrated device having a thin film transistor device according to claim 1, characterized in that: The touch screen is arranged above the thin film transistor and is connected to the source and drain of the thin film transistor.

6. The integrated device having a thin film transistor device according to claim 1, characterized in that: A glass cover plate is arranged above the touch screen.

7. The integrated device having a thin film transistor device according to claim 1, characterized in that: The thin film transistors are at least one group, and a built-in battery is arranged between adjacent thin film transistors.

8. The integrated device having a thin film transistor device according to claim 1, characterized in that: The sensor is a multifunctional sensor integrating a temperature sensor, a humidity sensor and a light sensor.

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