MOS (Metal Oxide Semiconductor) driving circuit with high switching speed and extremely low loss and protection board

Abstract

The utility model relates to the technical field of electronic circuits, and particularly discloses an MOS (Metal Oxide Semiconductor) driving circuit and a protection board which are high in switching speed and extremely low in loss, and the MOS driving circuit comprises a CD4011 chip, a first current-limiting resistor and an MOS tube, the CD4011 chip is a chip with two input ends and four NAND gates, a fifth pin and a sixth pin of the CD4011 chip are in short circuit, the fifth pin and the sixth pin of the CD4011 chip are connected to a DSG signal line, and a fourth pin of the CD4011 chip is connected with a first pin and a second pin of the CD4011 chip through the first current-limiting resistor; wherein a first pin, a second pin, an eighth pin, a ninth pin, a twelfth pin and a thirteenth pin of the CD4011 chip are in short circuit; the third pin, the tenth pin and the eleventh pin of the CD4011 chip are connected with the driving end of the MOS transistor, the MOS transistor can be quickly turned on or turned off, the loss is extremely low, the MOS transistor or the lithium battery is prevented from being damaged, and the service life of the MOS transistor and the service life of the lithium battery are prolonged.

Description

Technical Field

[0001] The utility model relates to the technical field of electronic circuits, in particular to a MOS drive circuit and a protection board with fast switching speed and extremely low loss. Background Art

[0002] The material problem of lithium batteries themselves determines that they cannot be overcharged, over-discharged, over-current, short-circuited, and charged and discharged at ultra-high temperatures. Therefore, the lithium battery protection board will always control the MOS tube switch to be turned off within the specified value to protect the safety of the battery cell. However, in many application scenarios, due to the limited driving capability of the chip, when more MOS tubes are used in parallel, the chip is no longer used to directly drive the MOS tube to turn on and off. Instead, a stronger driving circuit is built on the periphery of the chip to indirectly drive the MOS tube. The existing peripheral driving circuit cannot guarantee a fast enough opening and closing speed, which is easy to damage the MOS tube and lithium battery, reducing the service life of the MOS tube and lithium battery, and there is also the problem of high power consumption. Utility Model Content

[0003] In view of the above-mentioned problem that the peripheral drive circuit has a slow opening and closing speed, which easily damages the MOS tube and the lithium battery and reduces the service life of the MOS tube and the lithium battery, the utility model provides a MOS drive circuit and a protection board with fast switching speed and extremely low loss, which can quickly turn on or off the MOS tube with extremely low loss, prevent the MOS tube or the lithium battery from being damaged, and increase the service life of the MOS tube and the lithium battery.

[0004] In order to solve the above technical problems, the specific solutions provided by the utility model are as follows:

[0005] A MOS driving circuit with fast switching speed and extremely low loss, comprising a CD4011 chip, a first current limiting resistor and a MOS tube;

[0006] The CD4011 chip is a two-input four-NAND gate chip, the fifth pin and the sixth pin of the CD4011 chip are short-circuited, the fifth pin and the sixth pin of the CD4011 chip are connected to the DSG signal line, and the fourth pin of the CD4011 chip is connected to the first pin and the second pin of the CD4011 chip through the first current limiting resistor;

[0007] Wherein, the first pin, the second pin, the eighth pin, the ninth pin, the twelfth pin and the thirteenth pin of the CD4011 chip are short-circuited;

[0008] The third pin, the tenth pin and the eleventh pin of the CD4011 chip are connected to the driving end of the MOS tube.

[0009] In some embodiments, a second current limiting resistor is further included, and the fifth pin and the sixth pin of the CD4011 chip are connected to the DSG signal line through the second current limiting resistor. The second current limiting resistor can limit the current as needed to ensure that the CD4011 chip in the circuit will not be subjected to excessive current shocks, thereby preventing the CD4011 chip from overheating, short circuiting or damage.

[0010] In some embodiments, the driving end of the MOS tube is connected to a third current limiting resistor, which plays a role in distributing voltage to ensure that the MOS tube obtains an appropriate voltage and prevents the MOS tube from being subjected to excessively high voltage. It can also provide circuit stability and prevent the current from changing too quickly, thereby reducing circuit fluctuations and interference.

[0011] In some embodiments, a first resistor is arranged between the G pole and the S pole of the MOS tube, and a first diode is connected in parallel with the first resistor. The first resistor plays a discharge role, and the first diode plays a voltage stabilization role, which has the effect of preventing the MOS tube from being broken down and improving the stability of the MOS tube.

[0012] In some embodiments, a step-down circuit is further included, wherein the input end of the step-down circuit is connected to a power supply, and the output end of the step-down circuit is connected to the fourteenth pin of the CD4011 chip to provide a stable voltage to the CD4011 chip to ensure the working stability of the CD4011 chip.

[0013] In some embodiments, the step-down circuit includes a composite tube, the driving end and the first end of the composite tube are connected to a power supply, and the second end of the composite tube is connected to the fourteenth pin of the CD4011 chip. The composite tube is used to amplify power and reduce voltage, thereby providing a stable voltage for the CD4011 chip.

[0014] In some embodiments, the step-down circuit further includes a second diode, a second resistor and a third resistor, one end of the second diode is connected to a power supply, the other end of the second diode is connected to a first end of the second resistor, the second end of the second resistor is connected to a first end of the third resistor, the first end of the third resistor is connected to a driving end of the composite tube, the second diode plays an anti-reverse role, the second resistor and the third resistor play a voltage dividing and current limiting role, and ensure the working stability of the composite tube.

[0015] In some embodiments, the step-down circuit further includes a first capacitor, one end of the first capacitor is connected to the second end of the composite tube, and the other end of the first capacitor is connected to the driving end of the composite tube. The first capacitor plays a filtering role, so that the output voltage after filtering is a stable DC voltage.

[0016] In some embodiments, the step-down circuit further includes a third diode, which is disposed between the first capacitor and the driving end of the composite tube. The third diode can prevent reverse breakdown of the composite tube, thereby protecting the composite tube.

[0017] The present application also provides a protection board, including the MOS driving circuit described in any of the above items, which can quickly turn on or off the MOS tube with extremely low loss, prevent the MOS tube or lithium battery from being damaged, and increase the service life of the MOS tube and lithium battery.

[0018] Compared with the prior art, the beneficial effect of the utility model is that the utility model provides a MOS drive circuit and protection board with fast switching speed and extremely low loss. The CD4011 chip is used to construct the drive circuit of the MOS tube. Compared with other drive circuits, it has the advantages of simple design and extremely low power consumption. It can quickly turn on or off the MOS tube, effectively prevent the MOS tube or lithium battery from being damaged, and improve the service life of the MOS tube and the lithium battery. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] Figure 1 A schematic diagram of a MOS driving circuit provided in an embodiment of the utility model;

[0020] Figure 2 A schematic diagram of a MOS driving circuit provided in another embodiment of the utility model;

[0021] Figure 3 The schematic diagram of the step-down circuit provided in the embodiment of the utility model is shown in FIG. DETAILED DESCRIPTION

[0022] The preferred embodiments of the present application are described in detail below in conjunction with the accompanying drawings so that the advantages and features of the present application can be more easily understood by those skilled in the art, thereby making a clearer definition of the protection scope of the present application.

[0023] Please refer to the drawings, where the same component symbols represent the same components, and the principles of the present application are illustrated by implementing them in an appropriate computing environment. The following description is based on the illustrated specific embodiments of the present application, which should not be considered as limiting other specific embodiments of the present application that are not described in detail herein.

[0024] For example, a MOS driving circuit with fast switching speed and extremely low loss includes a CD4011 chip, a first current limiting resistor and a MOS tube; the CD4011 chip is a two-input four-NAND gate chip, the fifth pin and the sixth pin of the CD4011 chip are short-circuited, the fifth pin and the sixth pin of the CD4011 chip are connected to the DSG signal line, and the fourth pin of the CD4011 chip is connected to the first pin and the second pin of the CD4011 chip through the first current limiting resistor; wherein the first pin, the second pin, the eighth pin, the ninth pin, the twelfth pin and the thirteenth pin of the CD4011 chip are short-circuited; the third pin, the tenth pin and the eleventh pin of the CD4011 chip are connected to the driving end of the MOS tube.

[0025] The present embodiment provides a MOS driving circuit and protection board with fast switching speed and extremely low loss. The CD4011 chip is used to construct the driving circuit of the MOS tube. Compared with other driving circuits, it has the advantages of simple design and extremely low power consumption. It can quickly turn on or off the MOS tube, effectively prevent the MOS tube or lithium battery from being damaged, and improve the service life of the MOS tube and the lithium battery.

[0026] Embodiment 1:

[0027] like Figure 1 As shown, a MOS driving circuit with fast switching speed and extremely low loss includes a CD4011 chip, a first current limiting resistor and a MOS tube.

[0028] The CD4011 chip is a two-input four-NAND gate CMOS chip. Its first pin, second pin and third pin represent a single two-input NAND gate, its fifth pin, sixth pin and fourth pin represent a single two-input NAND gate, similarly, its eighth pin, ninth pin and tenth pin represent a single two-input NAND gate, and its twelfth pin, thirteenth pin and eleventh pin represent a single two-input NAND gate.

[0029] In the separate two-input NAND gate represented by the fifth pin, the sixth pin and the fourth pin, the fifth pin and the sixth pin are short-circuited, and the NAND gate is changed to a NOT gate application. The fifth pin and the sixth pin are connected to the DSG signal line. The DSG signal line transmits the DSG signal from the AFE module. The DSG signal can be a high-level signal or a low-level signal. The fourth pin of the CD4011 chip is connected to the first pin and the second pin of the CD4011 chip through the first current limiting resistor R159.

[0030] Among them, the input pins of the two-input NAND gate represented by the first pin, the second pin and the third pin, the two-input NAND gate represented by the eighth pin, the ninth pin and the tenth pin, and the two-input NAND gate represented by the twelfth pin, the thirteenth pin and the eleventh pin are short-circuited together, that is, the first pin, the second pin, the eighth pin, the ninth pin, the twelfth pin and the thirteenth pin of the CD4011 chip are short-circuited. Therefore, after the signal output by the fourth pin of the CD4011 chip passes through the first current limiting resistor R159, the first pin, the second pin, the eighth pin, the ninth pin, the twelfth pin and the thirteenth pin simultaneously receive the level signal output by the fourth pin.

[0031] For example, the fifth and sixth pins of the CD4011 chip receive the DSG signal from the AFE module through the DSG signal line, and the DSG signal is a high-level signal. The DSG signal passes through the fifth and sixth pins and then outputs a low-level signal from the fourth pin. The low-level signal passes through the first current limiting resistor R159, and the first, second, eighth, ninth, twelfth and thirteenth pins receive the low-level signal at the same time. The third, tenth and eleventh pins output a voltage close to the high-level power supply, so that the MOS tube Q1 is turned on or off.

[0032] Similarly, when the fifth and sixth pins of the CD4011 chip receive the DSG signal from the AFE module through the DSG signal line, and the DSG signal is a low-level signal, the DSG signal passes through the fifth and sixth pins and then outputs a high-level signal from the fourth pin. The high-level signal passes through the first current limiting resistor R159, and the first, second, eighth, ninth, twelfth and thirteenth pins receive the high-level signal at the same time, and the third, tenth and eleventh pins output a voltage close to a low level, so that the MOS tube Q1 is turned on or off.

[0033] It can be understood that since the CD4011 chip is a two-input four-NAND gate CMOS chip, when the third pin, the tenth pin and the eleventh pin output a voltage close to the high level of the power supply, the NMOS tube in the CD4011 chip is turned off and the PMOS tube is turned on. Therefore, the output voltage of the third pin, the tenth pin and the eleventh pin is pulled up to the power supply voltage, so that the MOS tube Q1 is turned on; when the third pin, the tenth pin and the eleventh pin output a voltage close to the low level, the NMOS tube in the CD4011 chip is turned on and the PMOS tube is turned off. Therefore, the output voltage of the third pin, the tenth pin and the eleventh pin is pulled down to GND.

[0034] This example provides a MOS drive circuit and protection board with fast switching speed and extremely low loss. The CD4011 chip is used to build the MOS tube drive circuit. Since the CD4011 chip is a CMOS chip, the CMOS chip output works in a push-pull form. It has the unique characteristics of low static power consumption and nanowatt power consumption per gate; large logic swing, approximately equal to the power supply voltage; strong anti-interference ability, and a DC noise tolerance of about 35% of the logic swing; can work within a wider power supply voltage range, which is convenient for interfacing with other circuits; fast speed, and the gate delay time is nanosecond level. Therefore, compared with other drive circuits, the MOS tube drive circuit built using the CD4011 chip has the advantages of simple design and extremely low power consumption, and can quickly turn on or off the MOS tube, effectively preventing the MOS tube or lithium battery from being damaged, and increasing the service life of the MOS tube and lithium battery.

[0035] Embodiment 2:

[0036] refer to Figure 1 In this example, a MOS driving circuit with fast switching speed and extremely low loss is provided, which also includes a second current limiting resistor R109. The fifth pin and the sixth pin of the CD4011 chip are connected to the DSG signal line through the second current limiting resistor R109. The second current limiting resistor R109 can limit the current as needed to ensure that the CD4011 chip in the circuit will not be subjected to excessive current shock, thereby preventing the CD4011 chip from overheating, short circuit or damage.

[0037] In some embodiments, the driving end of the MOS tube Q1 is connected to a third current limiting resistor R40, which plays a role in distributing voltage to ensure that the MOS tube Q1 obtains an appropriate voltage and prevents the MOS tube from being subjected to excessively high voltage. It can also provide circuit stability and prevent the current from changing too quickly, thereby reducing circuit fluctuations and interference.

[0038] In some embodiments, a first resistor R145 is provided between the G pole and the S pole of the MOS tube, and a first diode ZD2 is connected in parallel to the first resistor R145. The first resistor R145 plays a discharge role, and the first diode ZD2 plays a voltage stabilization role, which has the effect of preventing the MOS tube Q1 from being broken down and improving the stability of the MOS tube Q1.

[0039] Combined with the above content, the MOS driving circuit constructed by the CD4011 chip drives the third current limiting resistor R40 and the first resistor R145 to form a MOS circuit with extremely fast opening and closing speeds. Compared with other driving circuits, it has a simple design and extremely low power consumption, which greatly improves the safety and reliability of the driving circuit.

[0040] Embodiment three:

[0041] like Figure 2 and Figure 3 As shown, a MOS driving circuit with fast switching speed and extremely low loss is provided in this example, which also includes a step-down circuit. The input end of the step-down circuit is connected to the power supply, wherein the fourteenth pin of the CD4011 chip is the positive pole of the power supply, and the seventh pin of the CD4011 chip is the negative pole of the power supply. The output end of the step-down circuit is connected to the fourteenth pin of the CD4011 chip to provide a stable voltage to the CD4011 chip to ensure the working stability of the CD4011 chip.

[0042] Specifically, the step-down circuit includes a composite tube, which is composed of a triode Q28 and a triode Q33. The driving end and the first end of the composite tube are connected to the power supply, and the second end of the composite tube is connected to the fourteenth pin of the CD4011 chip. The composite tube is used to amplify power and reduce voltage, thereby providing a stable voltage for the CD4011 chip.

[0043] In some embodiments, the step-down circuit further includes a second diode D9, a second resistor R154 and a third resistor R197, one end of the second diode D9 is connected to the power supply, the other end of the second diode D9 is connected to the first end of the second resistor R154, the second end of the second resistor R154 is connected to the first end of the third resistor R197, the first end of the third resistor R197 is connected to the driving end of the composite tube, the second diode D9 plays an anti-reverse role, the second resistor R154 and the third resistor R197 play a voltage dividing and current limiting role, so as to ensure the working stability of the composite tube.

[0044] In some embodiments, the step-down circuit further includes a first capacitor C5, one end of the first capacitor C5 is connected to the second end of the composite tube, and the other end of the first capacitor C5 is connected to the driving end of the composite tube. The first capacitor C5 plays a filtering role, so that the output voltage after filtering is a stable DC voltage.

[0045] In some embodiments, the step-down circuit further includes a third diode ZD10, which is disposed between the first capacitor C5 and the driving end of the composite tube. The third diode ZD10 can prevent reverse breakdown of the composite tube and protect the composite tube.

[0046] This example provides a MOS drive circuit with fast switching speed and extremely low loss. By adding a step-down circuit, a stable power supply is provided for the CD4011 chip, thereby achieving the purpose of improving the circuit driving capability.

[0047] Embodiment 4:

[0048] The present application also provides a protection board, including the MOS driving circuit in any of the above embodiments. The MOS driving circuit is applied to the protection board, which can quickly turn on or off the MOS tube with extremely low loss, thereby preventing the MOS tube or lithium battery from being damaged and increasing the service life of the MOS tube and the lithium battery.

[0049] In summary, the utility model provides a MOS drive circuit and protection board with fast switching speed and extremely low loss. The CD4011 chip is used to construct the drive circuit of the MOS tube. Compared with other drive circuits, it has the advantages of simple design and extremely low power consumption. It can quickly turn on or off the MOS tube, effectively prevent the MOS tube or lithium battery from being damaged, and improve the service life of the MOS tube and the lithium battery.

[0050] Reference to "embodiments" herein means that a particular feature, structure, or characteristic described in conjunction with the embodiments may be included in at least one embodiment of the present application. The appearance of the phrase in various locations in the specification does not necessarily refer to the same embodiment, nor is it an independent or alternative embodiment that is mutually exclusive with other embodiments. It is explicitly and implicitly understood by those skilled in the art that the embodiments described herein may be combined with other embodiments.

[0051] In the description of this application, it should be noted that, unless otherwise clearly specified and limited, the terms "installed", "connected", and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection, an electrical connection, or mutual communication; it can be a direct connection, or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements. For ordinary technicians in this field, the specific meanings of the above terms in this application can be understood according to specific circumstances.

Claims

1. A MOS drive circuit with fast switching speed and extremely low loss, characterized in that: It includes a CD4011 chip, a first current limiting resistor and a MOS tube; The CD4011 chip is a two-input four-NAND gate chip, the fifth pin and the sixth pin of the CD4011 chip are short-circuited, the fifth pin and the sixth pin of the CD4011 chip are connected to the DSG signal line, and the fourth pin of the CD4011 chip is connected to the first pin and the second pin of the CD4011 chip through the first current limiting resistor; Wherein, the first pin, the second pin, the eighth pin, the ninth pin, the twelfth pin and the thirteenth pin of the CD4011 chip are short-circuited; The third pin, the tenth pin and the eleventh pin of the CD4011 chip are connected to the driving end of the MOS tube.

2. The MOS driving circuit with fast switching speed and extremely low loss according to claim 1, characterized in that: It also includes a second current limiting resistor, and the fifth pin and the sixth pin of the CD4011 chip are connected to the DSG signal line through the second current limiting resistor.

3. The MOS driving circuit with fast switching speed and extremely low loss according to claim 1, characterized in that: The driving end of the MOS tube is connected to a third current limiting resistor.

4. The MOS driving circuit with fast switching speed and extremely low loss according to claim 1, characterized in that: A first resistor is arranged between the G pole and the S pole of the MOS tube, and a first diode is connected in parallel to the first resistor.

5. The MOS driving circuit with fast switching speed and extremely low loss according to claim 1, characterized in that: It also includes a step-down circuit, the input end of the step-down circuit is connected to the power supply, and the output end of the step-down circuit is connected to the fourteenth pin of the CD4011 chip.

6. The MOS driving circuit with fast switching speed and extremely low loss according to claim 5, characterized in that: The step-down circuit comprises a composite tube, a driving end and a first end of the composite tube are connected to a power supply, and a second end of the composite tube is connected to the fourteenth pin of the CD4011 chip.

7. The MOS driving circuit with fast switching speed and extremely low loss according to claim 6, characterized in that: The step-down circuit also includes a second diode, a second resistor and a third resistor, one end of the second diode is connected to a power supply, the other end of the second diode is connected to a first end of the second resistor, the second end of the second resistor is connected to a first end of the third resistor, and the first end of the third resistor is connected to a driving end of the composite tube.

8. The MOS driving circuit with fast switching speed and extremely low loss according to claim 6, characterized in that: The step-down circuit further includes a first capacitor, one end of the first capacitor is connected to the second end of the composite tube, and the other end of the first capacitor is connected to the driving end of the composite tube.

9. The MOS driving circuit with fast switching speed and extremely low loss according to claim 8, characterized in that: The step-down circuit further includes a third diode, and the third diode is arranged between the first capacitor and the driving end of the composite tube.

10. A protective plate, characterized in that: The protection board is provided with a MOS driving circuit, and the MOS driving circuit is the MOS driving circuit described in any one of claims 1-9.

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