Radio frequency front-end module

Abstract

The utility model relates to the technical field of integrated circuits, in particular to a radio frequency front-end module which comprises a circuit substrate and a chip arranged on the circuit substrate. The chip comprises a metal layer and a substrate layer arranged opposite to the metal layer, and further comprises a component unit, the first metal component is arranged on the metal layer, and the first metal component is electrically connected with at least one component unit; the second metal component is arranged on the metal layer, and the second metal component is not electrically connected with any component unit; the metal layer of the chip is opposite to the circuit substrate, and the chip is inversely connected to the circuit substrate through the first metal component and the second metal component; through the above mode, the second metal member which does not play a role in electrical connection is formed on the chip metal layer, so that when the chip is inversely connected to the circuit substrate, the stress distribution on the chip is more uniform, and the circuit performance and reliability in the radio frequency front end module are improved.

Description

Technical Field

[0001] The present application relates to the field of integrated circuit technology, and in particular to a radio frequency front-end module. Background Art

[0002] In the background technology, the chip and the circuit substrate in the RF front-end module are connected to each other through metal components and metal solder balls in the metal components. The metal components extend the metallization layer inside the chip to the periphery and connect to the metal solder balls, and export the electrical signal from the circuit inside the chip to the metal solder balls, and then to the circuit substrate. In the above-mentioned RF front-end module, the metal component not only transmits the signal as an extension of the metal layer, but also plays a mechanical connection role between the chip and the circuit substrate. Since the metal components are unevenly distributed on the chip, the chip stress is uneven, which is not conducive to improving the circuit performance and reliability in the RF front-end module. Utility Model Content

[0003] In view of the above problems, an embodiment of the present application provides a radio frequency front-end module to solve the technical problem of uneven chip stress.

[0004] An embodiment of the present application provides a radio frequency front-end module, comprising a circuit substrate and a chip disposed on the circuit substrate;

[0005] The chip includes multiple metal layers;

[0006] Component unit;

[0007] A first metal component disposed on the metal layer, wherein the first metal component is electrically connected to at least one of the component units;

[0008] a second metal component disposed on the metal layer, wherein the second metal component is not electrically connected to any of the component units;

[0009] The metal layer of the chip faces the circuit substrate, and the chip is flip-chip connected to the circuit substrate via the first metal component and the second metal component.

[0010] Optionally, a projection of the second metal component on the metal layer along a first direction does not overlap with a setting area of ​​the component unit, and the first direction is perpendicular to the metal layer.

[0011] Optionally, the chip is further provided with a circuit unit, and a projection of the second metal component on the metal layer along the first direction does not overlap with a setting area of ​​the circuit unit.

[0012] Optionally, the chip is rectangular, and the second metal components are arranged at four corners of the chip.

[0013] Optionally, the second metal component is also disposed on other areas of the metal layer except four vertex areas where the first metal component is not distributed.

[0014] Optionally, the component unit includes a transistor unit, and the second metal component is arranged around the first metal component which is arranged opposite to the transistor unit.

[0015] Optionally, the second metal component includes a metal column disposed on the metal layer and a solder disposed on the metal column.

[0016] Optionally, the second metal component further includes a metal connection region connected to the metal column, and the metal connection region penetrates the plurality of metal layers and a dielectric layer between every two adjacent metal layers.

[0017] Optionally, the first direction is perpendicular to the metal layer, and a projection of the metal column on the metal layer along the first direction is located within a projection of the metal connection region on the metal layer along the first direction.

[0018] Optionally, a difference between a radius of a projection of the first hollow portion on the metal layer and a radius of a projection of the metal column on the metal layer is 8-10 μm.

[0019] Optionally, a first cavity region is formed in a corresponding region below the second metal component on the chip, and the first cavity region is filled with a medium.

[0020] Optionally, the first direction is perpendicular to the metal layer, and a projection of the metal column on the metal layer along the first direction is located within a projection of the first cavity region on the metal layer along the first direction.

[0021] Optionally, the first direction is perpendicular to the metal layer, the first metal component is a metal convex strip whose projection on the metal layer along the first direction is a circular metal convex strip or a metal convex block whose projection on the metal layer along the first direction is a strip-shaped metal convex block, and the second metal component is a metal convex block whose projection on the metal layer along the first direction is a circular metal convex block.

[0022] Optionally, the second metal component is electrically connected to the chip but not to the circuit substrate, or the second metal component is electrically connected to the circuit substrate but not to the chip, or the second metal component is not electrically connected to both the chip and the circuit substrate.

[0023] Optionally, the first direction is perpendicular to the metal layer, the metal layer includes a second direction perpendicular to the first direction and a third direction perpendicular to the second direction, the metal layer includes a plurality of setting areas arranged along the second direction, the setting areas include at least one uniform setting area and at least one non-uniform setting area, the uniform setting area is provided with at least two of the first metal components arranged along the third direction and uniformly distributed, the non-uniform setting area includes at least one of the first metal components arranged along the third direction and non-uniformly distributed, and at least one second metal component is arranged in the non-uniform setting area so that the first metal components and the second metal components are uniformly distributed.

[0024] Optionally, the metal layer includes a non-uniformly set area, a first uniformly set area, a second uniformly set area and a third uniformly set area arranged in sequence along the second direction, the first uniformly set area includes a plurality of the first metal components whose projections on the metal layer along the first direction are strip-shaped, the second uniformly set area and the third uniformly set area respectively include a plurality of the first metal components whose projections on the metal layer along the first direction are circular, the non-uniformly set area includes a first second metal component arranged in sequence along the third direction, at least two continuously arranged first metal components whose projections on the metal layer along the first direction are circular, and a second second metal component.

[0025] The RF front-end module provided in the embodiment of the present application includes a circuit substrate and a chip arranged on the circuit substrate; the chip includes a metal layer and a substrate layer arranged opposite to the metal layer, and the chip also includes a component unit; a first metal component arranged on the metal layer, the first metal component is electrically connected to at least one of the component units; a second metal component is arranged on the metal layer, the second metal component is not electrically connected to any of the component units; the metal layer of the chip is opposite to the circuit substrate, and the chip is flip-chip connected to the circuit substrate through the first metal component and the second metal component; through the above method, a second metal component that does not play an electrical connection role is formed on the metal layer of the chip, so that when the chip is flip-chip connected to the circuit substrate, the stress distribution on the chip is more uniform, so as to improve the circuit performance and reliability in the RF front-end module.

[0026] These and other aspects of the present application will become more clearly understood in the description of the following embodiments. BRIEF DESCRIPTION OF THE DRAWINGS

[0027] Figure 1 A schematic diagram of the structure of the radio frequency front-end module provided in an embodiment of the present application is shown.

[0028] Figure 2A schematic diagram of the structure of a chip in a radio frequency front-end module provided in an embodiment of the present application is shown.

[0029] Figure 3 A structural schematic diagram of a chip in a radio frequency front-end module provided in an embodiment of the present application is shown.

[0030] Figure 4 A structural schematic diagram of a chip in a radio frequency front-end module provided in an embodiment of the present application is shown.

[0031] Figure 5 A partial structural schematic diagram of a chip in a radio frequency front-end module provided in an embodiment of the present application is shown.

[0032] Figure 6 A partial structural schematic diagram of a chip in a radio frequency front-end module provided in an embodiment of the present application is shown.

[0033] Figure 7 A partial structural schematic diagram of a chip in a radio frequency front-end module provided in an embodiment of the present application is shown.

[0034] Figure 8 A partial structural schematic diagram of a chip in a radio frequency front-end module provided in an embodiment of the present application is shown.

[0035] Fig. 9 A partial structural schematic diagram of a chip in a radio frequency front-end module provided in an embodiment of the present application is shown.

[0036] Fig.10 An example diagram of the layout of metal components of the chip in the RF front-end module provided in an embodiment of the present application is shown. DETAILED DESCRIPTION

[0037] The embodiments of the present application are described in detail below, and examples of the embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals throughout represent the same or similar elements or elements having the same or similar functions. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain the present application, and cannot be understood as limiting the present application.

[0038] In order to enable those skilled in the art to better understand the solutions of the present application, the technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without making creative work are within the scope of protection of the present application.

[0039] In the embodiments of the present application, it should be noted that, in this article, relational terms such as first and second, etc. are merely used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any actual relationship or order between these entities or operations.

[0040] Moreover, the terms "comprises," "comprising," or any other variation thereof are intended to encompass non-exclusive inclusion, such that a process, method, article, or apparatus that includes a list of elements includes not only those elements, but also other elements not explicitly listed, or elements inherent to such process, method, article, or apparatus. In the absence of further limitations, an element defined by the phrase "comprising a ..." does not exclude the presence of additional identical elements in the process, method, article, or apparatus that includes the element.

[0041] In the description of the embodiments of the present application, words such as "example" or "for example" are used to indicate examples, illustrations or descriptions. Any embodiment or design described as "example" or "for example" in the embodiments of the present application is not to be interpreted as being more preferred or having more advantages than another embodiment or design. The use of words such as "example" or "for example" is intended to present relative concepts in a clear manner.

[0042] In addition, the "plurality" in the embodiments of the present application refers to two or more than two. In view of this, in the embodiments of the present application, "plurality" can also be understood as "at least two". "At least one" can be understood as one or more, for example, one, two or more. For example, including at least one means including one, two or more, and there is no limit on which ones are included. For example, including at least one of A, B and C, then A, B, C, A and B, A and C, B and C, or A, B and C can be included.

[0043] It should be noted that, in the embodiments of the present application, "and / or" describes the association relationship of the associated objects, indicating that three relationships may exist. For example, A and / or B may represent: A exists alone, A and B exist at the same time, and B exists alone. In addition, the character " / ", unless otherwise specified, generally indicates that the associated objects before and after are in an "or" relationship.

[0044] It should be noted that in the embodiments of the present application, "connection" can be understood as electrical connection, and the connection between two electrical components can be a direct or indirect connection between the two electrical components. For example, the connection between A and B can be either a direct connection between A and B or an indirect connection between A and B through one or more other electrical components.

[0045] The present application embodiment provides a radio frequency front-end module 100, see Figure 1 and Figure 2As shown, the RF front-end module 100 includes a circuit substrate 10 and a chip 20 disposed on the circuit substrate.

[0046] Among them, see Figure 1 , Figure 2 and Figure 3 As shown, the chip 20 includes a metal layer 201, an active layer and a substrate layer 202. The substrate layer 202, the active layer and the metal layer 201 are arranged from bottom to top. The chip 20 also includes a component unit 21, a first metal component 22 and a second metal component 23.

[0047] It should be noted that, for the convenience of description, Figure 2 , Figure 5 and Figure 6 The illustrated chip only shows the component unit 21 , the first metal component 22 and the second metal component 23 , and does not show the portion between the component unit 21 and the first metal component 22 .

[0048] In at least one embodiment, the first metal component 22 and the second metal component 23 may be copper pillar bumps or solder balls.

[0049] In at least one embodiment, the chip includes multiple metal layers, wherein the metal layer 201 of the chip 20 can be any metal layer of the multiple metal layers of the chip, for example, the first metal component 22 and the second metal component 23 are arranged on the top metal layer of the chip. The component unit 21 is arranged on other metal layers of the chip or on the active layer.

[0050] In some embodiments, see Figure 3 As shown, the chip 20 may include a semiconductor substrate, an active layer formed on the upper surface of the semiconductor substrate, and multiple metal layers formed on the active layer. Components such as transistors, resistors, capacitors or inductors may be made in at least one of the above-mentioned metal layers. In this case, the lower surface of the semiconductor substrate may be the substrate layer 202 of the chip 20, and the upper surface of the topmost metal layer 201 is the side of the chip 20 facing the circuit substrate 10. The components in the component unit 21 may be located in the same metal layer or in different metal layers. The components in the component unit 21 may also be located in the active layer. Please refer to Figure 4 As stated in Figure 3 Based on the figure, the chip 20 may further include a component unit 21 protruding from the topmost metal layer 201 .

[0051] For example, components such as transistors, resistors, capacitors or inductors are connected in different ways to form different component units 21 arranged on the chip 20 to achieve functions such as signal processing, information storage, data calculation, etc.

[0052] In the background technology, the chip can be prepared by, for example, CMOS (Complementary Metal Oxide Semiconductor) process, SOI (Silicon-On-Insulator) process, gallium arsenide process, and silicon-based gallium nitride process. The chips used in the RF front-end module are mostly prepared by, for example, CMOS process and silicon-based gallium nitride process. Among them, the first metal component 22 is arranged on the metal layer 201, and the first metal component 22 is electrically connected to at least one component unit 21. Specifically, a plurality of component units 21 can be arranged on the chip 20. Exemplarily, the component unit 21 can be a unit composed of active devices, a unit composed of passive devices, or a unit composed of active devices and passive devices. For example: the component unit 21 can be a transistor unit formed by a plurality of transistor elements connected in parallel, or the component unit 21 can be a current mirror unit formed by a plurality of transistor elements, or the component unit 21 can be an impedance matching unit formed by a capacitor and an inductor in series. At least some of the component units 21 on the chip 20 may need to transmit electrical signals to other component units on the chip 20 or external component units on the circuit substrate 10, or need to receive electrical signals transmitted by other component units on the chip 20 or external component units on the circuit substrate 10. The transmission of the above electrical signals can be achieved through the first metal component 22. The first metal component 22 is connected to the component unit 21 located inside the chip 20 through the metal layer of the chip 20 to extract the electrical signal from the inside of the chip 20 or transmit the electrical signal to the inside of the chip 20. The first metal component 22 realizes the electrical connection between the chip 20 and the circuit substrate 10. At the same time, when the chip 20 is soldered to the circuit substrate 10 with the metal layer 201 facing downward, the first metal component 22 realizes the connection between the chip 20 and the circuit substrate 10, and the first metal component 22 also plays a role in supporting the chip 20. In this embodiment, the electrical signal can be a signal transmitted in the RF front-end circuit, such as a radio frequency signal, a control signal, or a bias signal.

[0053] The second metal component 23 is disposed on the metal layer 201, and the second metal component 23 is not electrically connected to any component unit 21. Specifically, the second metal component 23 is not electrically connected to any component unit 21. When the chip 20 is soldered to the circuit substrate 10 with the metal layer 201 facing downward, the second metal component 23 only realizes the mechanical connection between the chip 20 and the circuit substrate 10, and the second metal component 23 also plays a role in supporting the chip 20. The electrical connection between the chip 20 and the circuit substrate 10 is not realized by the second metal component 23. For example, when the chip 20 is soldered to the circuit substrate 10, the second metal component 23 may be electrically connected to the chip 20 but not to the circuit substrate 10, or the second metal component 23 may be electrically connected to the circuit substrate 10 but not to the chip 20, or the second metal component 23 may be electrically connected to neither the chip 20 nor the circuit substrate 10.

[0054] Among them, the metal layer 201 of the chip 20 is opposite to the circuit substrate 10, and the chip 20 is flip-connected to the circuit substrate 10 through the first metal component 22 and the second metal component 23. The chip 20 in the RF front-end module 100 of the embodiment of the present application is a flip chip. As a flip chip, the chip 20 can have more interfaces, a smaller package size, better electrical performance and heat dissipation performance, and more stable structural characteristics, thereby improving the performance of the RF front-end module. When the chip is flip-connected to the circuit substrate, physical stress is formed between the component units inside the chip and the metal components on the surface of the chip. The stress can exist between grains, lattice defects, and interface dislocations.

[0055] Compared with only setting the first metal component 22, setting the first metal component 22 and the second metal component 23 at the same time can make the support points on the chip 20 more evenly distributed, so that when the chip 20 is flip-chip connected to the circuit substrate 10, the chip 20 is subjected to more uniform force, and the uniformity of stress distribution on the chip 20 is improved.

[0056] In at least one embodiment, the first metal component 22 and the second metal component 23 may be pads, solder balls, bumps, etc. The first metal component 22 and the second metal component 23 may be in any shape such as circular, oval, square or rectangular. It should be emphasized that the first metal component 22 can realize the electrical connection between the chip 20 and the circuit substrate 10, while the second metal component 23 does not play the role of electrical connection.

[0057] In this embodiment, a second metal component that does not serve as an electrical connection is formed on the metal layer of the chip so that when the chip is flip-chip connected to the circuit substrate, the stress distribution on the chip is more uniform, thereby improving the circuit performance and reliability in the RF front-end module.

[0058] As an implementation, see Figure 1As shown, the first direction S1 extends in the thickness direction of the chip 20. For example, in a three-dimensional coordinate system, if the metal layer 201 is parallel to the XY plane, the first direction S1 is parallel to the Z axis. Figure 3 and Figure 4 As shown, the component unit 21 can be located above the top metal layer 201 or below the top metal layer 201. Figure 5 As shown, the projection of the second metal component 23 on the metal layer 201 along the first direction S1 does not overlap with the arrangement area of ​​the component unit 21 , and the first direction S1 is perpendicular to the metal layer 201 .

[0059] In this embodiment, the second metal component 23 is not disposed above the component unit 21 to avoid the second metal component 23 from affecting the component unit 21 , which can further improve the reliability of the RF front-end module.

[0060] In some embodiments, please refer to Figure 4 As shown, the chip 20 is further provided with a circuit unit 24. The chip 20 includes alternately stacked metal layers M and dielectric layers ILD. Each component 211 in the component unit 21 is formed in the dielectric layer ILD and / or the metal layer M. The circuit unit 24 for connecting each component 211 is formed in the metal layer M. The circuit unit 24 can be located on the top metal layer 201, or in any metal layer below the top metal layer 201. Please refer to Figure 5 As shown, the projection of the second metal component 23 on the metal layer 201 along the first direction S1 does not overlap with the setting area of ​​the line unit 24. In this embodiment, the line unit 24 can be used to connect at least two component units 21, and the second metal component 23 is not set above the line unit 24 to avoid the second metal component 23 from affecting the line unit 24, which can further improve the reliability of the RF front-end module.

[0061] As an example, the second metal component is disposed on a first area of ​​the metal layer, the circuit unit is disposed on a second area of ​​the metal layer, the first area and the second area are different areas on the metal layer, and the first area and the second area do not overlap.

[0062] As an example, the second metal component is arranged on a first area of ​​the metal layer, and the circuit unit is arranged on a second area of ​​a metal layer below the metal layer, and an area where the second area of ​​the metal layer below the metal layer is projected onto the metal layer does not overlap with the first area.

[0063] In some embodiments, the second metal member 23 may be grounded to allow the second metal member 23 to have a stable potential and to prevent static electricity from accumulating on the second metal member 23 .

[0064] In some embodiments, the second metal component 23 may not be grounded.

[0065] As an implementation, see Figure 6 As shown, the chip 20 is rectangular, and the second metal component 23 is provided at the four corners of the chip 20. In this embodiment, since there are fewer component units 21 or line units 24 at the four corners of the rectangle and there is generally no first metal component 22 at the four corners of the rectangle, the stress at the four corners of the chip 20 is relatively large. This embodiment can not only improve the stress but also avoid affecting the component unit 21 or line unit 24 by providing the second metal component 23 at the four corners of the rectangle, and can further improve the reliability of the RF front-end module.

[0066] It should be noted that if the chip 20 is polygonal, the second metal component can be disposed at multiple corners of the chip.

[0067] In some embodiments, the second metal component 23 is also disposed in other regions except the four corner regions on the topmost metal layer 201. For example, the second metal component 23 can be disposed in a region where the first metal component 22 is less distributed, so that the support points on the chip 20 are more evenly distributed.

[0068] As an example, see Figure 5 As shown, in Figure 5 The first metal component 22 is not distributed in the A1 area, see Figure 6 As shown, at least one second metal component 23 may be disposed in the A1 region.

[0069] As an embodiment, the component unit 21 includes a transistor unit, and the second metal component 23 is arranged around the first metal component 22 arranged opposite to the transistor unit. Figure 5 The component unit 21 in the A2 region is a transistor unit. A plurality of second metal components 23 (such as Figure 6As shown). Exemplarily, the transistor unit may include a plurality of transistors arranged in sequence, and the plurality of transistors are arranged in parallel with each other. The transistor may be a heterojunction bipolar transistor (HBT) or a field effect transistor. The transistor unit may be used as part of a power amplifier circuit to amplify the power of a signal, and the transistor unit may also be used as part of a switch circuit for transmitting and switching signals. In this embodiment, the transistor unit is more sensitive to stress than other component units. At least one second metal component 23 is arranged around the first metal component 22 above the transistor unit, so that the stress in the area where the single tube unit is located can be more uniform, which is beneficial to improving the stability of the transistor unit.

[0070] As an implementation, see Figure 7 As shown, the second metal component 23 includes a metal column 231 and a solder 232. The metal column 231 is disposed on the top metal layer 201, and the solder 232 is disposed at one end of the metal column 231 away from the metal layer 201. When the chip 20 is flip-chip connected to the circuit substrate 10, it is soldered to the circuit substrate 10 through the solder 232. Exemplarily, the metal column 231 can be formed on the outermost metal layer of the chip 20 by using a photolithography process.

[0071] In this embodiment, the metal pillar 231 is columnar, which can improve the packaging density; the metal pillar 231 can be a copper pillar, and the use of copper material can improve the electrical and thermal conductivity.

[0072] In some embodiments, please refer to Figure 7 As shown, the second metal component 23 also includes a metal connection area 233 connected to the metal column 231. The metal connection area 233 is located below the metal column 231. The metal connection area 233 runs through multiple metal layers and the dielectric layer between each two adjacent metal layers. In this embodiment, the second metal component 23 extends to the inside of the chip 20 through the metal connection area 233. Under the premise of ensuring uniform stress on the chip 20, the stress of the second metal component 23 is improved, which is conducive to further improving the stability of the RF front-end module. For example, in Figure 7 In the figure, the metal layer M1 is the top metal layer 201, and three metal layers M are arranged in sequence along the thickness direction of the chip 20 below the metal pillar 231, namely the metal layer M1, the metal layer M2 and the metal layer M3. The second metal component 23 is connected to the metal layer M1, and a dielectric layer N1 is arranged between the metal layer M1 and the metal layer M2, and a dielectric layer N2 is arranged between the metal layer M2 and the metal layer M3. The metal connection area 233 passes through the metal layer M1, the dielectric layer N1, the metal layer M2, the dielectric layer N2 and the metal layer M3 in sequence. Through the metal connection area 233, the second metal component 23 can directly penetrate to Figure 7The bottommost metal layer M3 is shown.

[0073] In some embodiments, please refer to Figure 7 As shown, the projection of the metal pillar 231 on the metal layer 201 along the first direction S1 is located within the projection of the metal connection area 233 on the metal layer 201 along the first direction S1. In this embodiment, the projection area of ​​the metal portion of the second metal component 233 extending to the inside of the chip 20 (i.e., the metal connection area 233) is larger than the bottom area of ​​the metal pillar 231 of the second metal component 233 located above the topmost metal layer 201, which is beneficial to further improve the stress of the second metal component 23 and further improve the stability of the RF front-end module.

[0074] In some embodiments, please refer to Figure 7 As shown, the radius of the projection of the metal connection area 233 on the metal layer 201 is R1, the radius of the projection of the metal column 231 on the metal layer 201 is R2, and the difference between R1 and R2 can be 8 to 10 μm. In this embodiment, the difference between R1 and R2 is controlled within 8 to 10 μm, which is conducive to better improving the stress of the second metal component 23 and further improving the stability of the RF front-end module.

[0075] In some embodiments, please refer to Figure 8 and Fig. 9 As shown, a first cavity region 203 is formed in a corresponding region below the second metal component 23 on the chip 20 , and the first cavity region 203 is filled with a medium.

[0076] In some embodiments, please refer to Figure 8 and Fig. 9 As shown, the second metal component 23 further includes a metal extension portion 234 disposed between the metal pillar 231 and the first cavity region 203. The metal extension portion 234 may be a portion of the metal pillar 231 extending to the inside of the chip 20, and the metal extension portion 234 is integrated with the metal pillar 231. Exemplarily, the projection of the metal extension portion 234 on the metal layer 201 along the first direction S1 is located within the projection of the first cavity region 203, and the projection of the metal pillar 231 on the metal layer 201 along the first direction S1 is located within the projection of the metal extension portion 234.

[0077] In some embodiments, see Figure 8 and Fig. 9 As shown, in the first direction S, the first cavity region 203 extends from the bottom of the metal extension portion 234 to the bottom metal layer M. The extension area of ​​the metal extension portion 234 in the first direction S1 is not limited. Figure 8 As shown, the metal extension 234 can be set through the topmost metal layer M1; Fig. 9As shown, the metal extension portion 234 may also be disposed to sequentially penetrate the topmost metal layer M1 and the metal layer M2 located below the metal layer M1 .

[0078] In some embodiments, see Figure 1 and Figure 5 As shown, the first metal component 22 can be a metal bump or a metal bar, and the second metal component 23 can be a metal bump. The projection of the metal bump on the metal layer 201 along the first direction S1 is circular, and the projection of the metal bar on the metal layer 201 along the first direction S1 is bar-shaped.

[0079] As an implementation, see Fig.10 As shown, the metal layer 201 includes a second direction perpendicular to the first direction S1 and a third direction perpendicular to the second direction. For example, in a three-dimensional coordinate system, if the metal layer 201 is parallel to the XY plane, the first direction S1 is parallel to the Z axis, the second direction is parallel to the Y axis, and the third direction is parallel to the X axis. The metal layer 201 includes a plurality of setting areas arranged along the second direction, the plurality of setting areas include at least one uniform setting area 200a and at least one non-uniform setting area 200b, the uniform setting area 200a is provided with at least two first metal components 22 arranged along the third direction and uniformly distributed, the non-uniform setting area 200b includes at least one first metal component 22 arranged along the third direction and non-uniformly distributed, the uniform setting area 200a and the non-uniform setting area 200b are determined according to whether the first metal component 22 is uniformly distributed in the corresponding area. The stress distribution in the uniform setting area 200a is relatively uniform; the stress distribution in the non-uniform setting area 200b is relatively uneven, and a second metal component 23 needs to be provided to make the stress distribution more uniform. At least one second metal component 23 is also arranged in the non-uniform arrangement area 200b to evenly distribute the first metal component 22 and the second metal component 23. In this embodiment, the second metal component is arranged in the area where the first metal component is unevenly distributed in the chip, which can reduce chip stress.

[0080] In some embodiments, please refer to Fig.10As shown, the metal layer 201 includes a non-uniformly arranged area 200b, a first uniformly arranged area 200a, a second uniformly arranged area 200a and a third uniformly arranged area 200a arranged in sequence along the second direction; the first uniformly arranged area 200a includes a plurality of first metal components 22 whose projections on the metal layer 201 along the first direction S1 are in the shape of strips, and exemplarily, the number of the first metal components 22 in the shape of strips is two; the second uniformly arranged area 200a and the third uniformly arranged area 200a respectively include a plurality of first metal components 22 whose projections on the metal layer 201 along the first direction S1 are in the shape of circles, and exemplarily, the number of the first metal components 22 in each area is four; the non-uniformly arranged area 200b includes a first second metal component 23 arranged in sequence along the third direction, at least two continuously arranged first metal components 22 whose projections on the metal layer 201 along the first direction S1 are in the shape of circles, and a second second metal component 23, and exemplarily, two circular first metal components 22 are provided, and the second metal component 23 whose projections on the metal layer 201 along the first direction S1 are in the shape of circles. In this embodiment, the second metal component is provided in the region where the first metal component is unevenly distributed in the chip, so as to reduce the chip stress.

[0081] The above is only an implementation method of the present application. It should be pointed out that a person skilled in the art can make improvements without departing from the inventive concept of the present application, but these improvements are within the scope of protection of the present application.

Claims

1. A radio frequency front-end module, characterized in that: It includes a circuit substrate and a chip arranged on the circuit substrate; The chip includes multiple metal layers; Component unit; A first metal component disposed on the metal layer, wherein the first metal component is electrically connected to at least one of the component units; A second metal component disposed on the metal layer, wherein the second metal component is not electrically connected to any of the component units; The metal layer of the chip faces the circuit substrate, and the chip is flip-chip connected to the circuit substrate via the first metal component and the second metal component.

2. The RF front-end module according to claim 1, characterized in that: A projection of the second metal component on the metal layer along a first direction does not overlap with a setting area of ​​the component unit, and the first direction is perpendicular to the metal layer.

3. The RF front-end module according to claim 2, characterized in that: The chip is further provided with a circuit unit, and a projection of the second metal component on the metal layer along the first direction does not overlap with a setting area of ​​the circuit unit.

4. The RF front-end module according to claim 1, characterized in that: The chip is rectangular, and the second metal components are arranged at four corners of the chip.

5. The RF front-end module according to claim 4, characterized in that: The second metal component is also arranged on other areas of the metal layer except the four vertex areas where the first metal component is not distributed.

6. The RF front-end module according to claim 1, characterized in that: The component unit includes a transistor unit, and the second metal component is arranged around the first metal component which is arranged opposite to the transistor unit.

7. The RF front-end module according to any one of claims 1 to 6, characterized in that: The second metal component includes a metal column disposed on the metal layer and a solder disposed on the metal column.

8. The RF front-end module according to claim 7, characterized in that: The second metal component further includes a metal connection region connected to the metal column, and the metal connection region penetrates through the plurality of metal layers and a dielectric layer between every two adjacent metal layers.

9. The RF front-end module according to claim 8, characterized in that: The first direction is perpendicular to the metal layer, and a projection of the metal column on the metal layer along the first direction is located within a projection of the metal connection region on the metal layer along the first direction.

10. The RF front-end module according to claim 9, characterized in that: A difference between a radius of a projection of the metal connection region on the metal layer and a radius of a projection of the metal column on the metal layer is 8-10 μm.

11. The RF front-end module according to claim 7, characterized in that: A first cavity region is formed in a corresponding area below the second metal component on the chip, and a medium is filled in the first cavity region.

12. The RF front-end module according to claim 11, characterized in that: The first direction is perpendicular to the metal layer, and a projection of the metal column on the metal layer along the first direction is located within a projection of the first cavity region on the metal layer along the first direction.

13. The RF front-end module according to claim 1, characterized in that: The first direction is perpendicular to the metal layer, the first metal component is a metal convex strip whose projection on the metal layer along the first direction is circular or a metal convex block whose projection on the metal layer along the first direction is strip-shaped, and the second metal component is a metal convex block whose projection on the metal layer along the first direction is circular.

14. The RF front-end module according to claim 1, characterized in that: The second metal component is electrically connected to the chip but not to the circuit substrate, or the second metal component is electrically connected to the circuit substrate but not to the chip, or the second metal component is not electrically connected to either the chip or the circuit substrate.

15. The RF front-end module according to claim 1, characterized in that: The first direction is perpendicular to the metal layer, the metal layer includes a second direction perpendicular to the first direction and a third direction perpendicular to the second direction, the metal layer includes a plurality of setting areas arranged along the second direction, the setting areas include at least one uniform setting area and at least one non-uniform setting area, the uniform setting area is provided with at least two of the first metal components arranged along the third direction and uniformly distributed, the non-uniform setting area includes at least one of the first metal components arranged along the third direction and non-uniformly distributed, and at least one second metal component is arranged in the non-uniform setting area so that the first metal components and the second metal components are uniformly distributed.

16. The radio frequency front-end module according to claim 15, characterized in that: The metal layer includes a non-uniformly arranged area, a first uniformly arranged area, a second uniformly arranged area and a third uniformly arranged area arranged in sequence along the second direction, the first uniformly arranged area includes a plurality of the first metal components whose projections on the metal layer along the first direction are in the shape of strips, the second uniformly arranged area and the third uniformly arranged area respectively include a plurality of the first metal components whose projections on the metal layer along the first direction are in the shape of circles, the non-uniformly arranged area includes a first second metal component arranged in sequence along the third direction, at least two continuously arranged first metal components whose projections on the metal layer along the first direction are in the shape of circles, and a second second metal component.

Images