High-power transmit-receive switching assembly

Abstract

The utility model relates to a high-power transmit-receive switching assembly, which relates to the field of microwave switches and comprises a PIN switch and an isolator. The PIN switch is connected with a first connector (1), a second connector (21) and a third connector (41) and comprises a middle microstrip line (2), a microstrip line T-shaped junction (4), an upper signal channel and a lower signal channel. The microstrip line T-shaped junction (4) is respectively connected with the middle microstrip line (2), the upper signal channel and the lower signal channel; the upper signal channel and the lower signal channel are both provided with isolators. According to the utility model, a high-power L-band switch and transmit-receive switching assembly is realized by using a microstrip line form, used diodes can be accurately matched, a debugging structure is reserved at a corresponding position of an input end after simulation, and only a capacitor needs to be replaced at a corresponding reserved position during debugging, so that the debugging difficulty is greatly reduced.

Description

Technical Field

[0001] The utility model relates to the field of microwave switches, in particular to a high-power transceiver switching component. Background Art

[0002] As a microwave control device, microwave switches are widely used in modern radar systems, communication systems, and electronic countermeasures. The main function is to control the transmission of microwave signals or switch one microwave signal to multiple transmission signals. With the development of technology, microwave switches are also divided into mechanical microwave switches and semiconductor device microwave switches. Mechanical microwave switches are limited by mechanical movement, and their switching time is slow, while semiconductor device microwave switches are switched by semiconductor devices, and their speed is fast. Semiconductor switches can be divided into diode forms and transistor forms (bare chips). For high-power microwave switches, separate PIN diode forms or GaN bare chip forms are generally used. The former can reach a power capacity of kW, while GaN devices can only be in the order of 100W. Therefore, for high-power switches, PIN diode switches play a major role in microwave switches.

[0003] For high-power single-pole double-throw PIN switches, they can be divided into parallel structure, series structure and parallel + series mixed structure. Due to the large internal resistance (tens of milliohms to hundreds of milliohms) and parasitic capacitance of the diode, the isolation of the parallel structure diode is better than that of the series structure, but the bandwidth of the parallel structure is narrower than that of the series structure. Therefore, for narrow-band high-power switches, parallel connection is generally adopted, while for broadband switches, series + parallel connection is generally adopted. Since the diode is a bare chip, it is easy to integrate with the microstrip line, so the transmission line is mostly in the form of microstrip line. Since the diode needs to be isolated, the DC blocking capacitor on the transmission line has a certain influence on the matching of the diode. In order to eliminate the influence, a certain matching is required at the input end to eliminate these influences. Utility Model Content

[0004] In order to solve the above-mentioned problems in the prior art, the utility model provides a high-power transceiver switching component.

[0005] A high-power transceiver switching component comprises: a PIN switch and an isolator; the PIN switch connects a first joint, a second joint and a third joint, the PIN switch comprises a middle microstrip line, a microstrip line T-junction, an upper signal channel and a lower signal channel; the microstrip line T-junction respectively connects the middle microstrip line, the upper signal channel and the lower signal channel; the upper signal channel and the lower signal channel are both provided with isolators.

[0006] Furthermore, a matching capacitor is provided between the middle microstrip line and the microstrip line T-junction.

[0007] Furthermore, the isolator includes an upper circulator and a lower circulator, the upper circulator is provided with an upper signal channel; the lower circulator is provided with a lower signal channel.

[0008] Furthermore, the added signal channel includes a first added DC blocking capacitor, a first added diode, a second added diode, a second added DC blocking capacitor and an added coupling structure connected in sequence; the second added DC blocking capacitor and the added coupling structure are connected via an added circulator, and the added circulator is also connected to a fourth connector via a second added microstrip line.

[0009] Furthermore, an add bias circuit, an add bypass capacitor and a first add microstrip line are sequentially connected between the second add diode and the second add DC blocking capacitor of the add signal channel.

[0010] Furthermore, the add coupling structure is provided with two parallel coupling lines between the add circulator and the second connector, the coupling line close to the add circulator is connected to the add coupling interface, and the coupling line close to the second connector is connected to the add load resistor.

[0011] Furthermore, the lower signal channel comprises a first lower DC blocking capacitor, a first lower diode, a second lower diode, a second lower DC blocking capacitor (36) and a lower coupling structure connected in sequence; the second lower DC blocking capacitor and the lower coupling structure are connected via a lower circulator, and the lower circulator is further connected to a fifth connector via a second lower microstrip line.

[0012] Furthermore, a lower bias circuit, a lower bypass capacitor and a first lower microstrip line are sequentially connected between the second lower diode and the second lower DC blocking capacitor of the lower signal channel.

[0013] Furthermore, the downlink coupling structure is provided with two parallel coupling lines between the downlink circulator and the third connector, the coupling line close to the downlink circulator is connected to the downlink coupling interface, and the coupling line close to the third connector is connected to the downlink load resistor.

[0014] The beneficial effects of the utility model: the utility model uses a microstrip line form to realize a high-power L-band 1kW switch and transceiver switching component, which can accurately match the diode used. After simulation, a debugging structure is left at the corresponding position of the input end. During debugging, it is only necessary to replace the capacitor at the corresponding reserved position, which greatly reduces the difficulty of debugging; it has strong versatility. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] Figure 1 It is a schematic diagram of the structural principle of the utility model.

[0016] Figure 2 This is the front view of the microstrip.

[0017] Figure 3 This is the back view of the microstrip.

[0018] Description of the drawings: 1. First connector; 2. Mid-path microstrip line; 3. Matching capacitor; 4. Microstrip line T-junction; 10. First upper-path DC-blocking capacitor; 11. First upper-path diode; 12. Second upper-path diode; 13. Upper-path bias circuit; 14. Upper-path bypass capacitor; 15. First upper-path microstrip line; 16. Second upper-path DC-blocking capacitor; 17. Upper-path circulator; 18. Upper-path coupling structure; 19. Upper-path coupling interface; 20. Upper-path load resistor; 21. Second connector; 2 2. Second upper microstrip line; 23. Fourth connector; 30. First lower DC blocking capacitor; 31. First lower diode; 32. Second lower diode; 33. Lower bias circuit; 34. Lower bypass capacitor; 35. First lower microstrip line; 36. Second lower DC blocking capacitor; 37. Lower circulator; 38. Lower coupling structure; 39. Lower coupling interface; 40. Lower load resistor; 41. Third connector; 42. Second lower microstrip line; 43. Fifth connector. DETAILED DESCRIPTION

[0019] The following will be combined with the drawings in the embodiments of the utility model to clearly and completely describe the technical solutions in the embodiments of the utility model. Obviously, the described embodiments are only part of the embodiments of the utility model, not all of the embodiments. Based on the embodiments in the utility model, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the utility model.

[0020] In this embodiment, refer to Figure 1~Figure 3 A high-power transceiver switching component, a transceiver switching component composed of an L-band high-power PIN switch and an isolator; the PIN switch connects a first joint 1, a second joint 21 and a third joint 41, and the PIN switch includes a middle microstrip line 2, a microstrip line T-junction 4, an upper signal channel and a lower signal channel; the microstrip line T-junction 4 connects the middle microstrip line 2, the upper signal channel and the lower signal channel respectively; the upper signal channel and the lower signal channel are both provided with isolators.

[0021] A matching capacitor 3 is provided between the mid-path microstrip line 2 and the microstrip line T-junction 4 .

[0022] The isolator includes an add circulator 17 and a drop circulator 36. The add circulator 17 is provided with an add signal channel; the drop circulator 36 is provided with a drop signal channel.

[0023] The add signal channel includes a first add DC blocking capacitor 10, a first add diode 11, a second add diode 12, a second add DC blocking capacitor 16 and an add coupling structure 18 which are connected in sequence; the second add DC blocking capacitor 16 and the add coupling structure 18 are connected via an add circulator 17, and the add circulator 17 is also connected to a fourth connector 23 via a second add microstrip line 22.

[0024] An add bias circuit 13, an add bypass capacitor 14 and a first add microstrip line 15 are connected in sequence between the second add diode 12 and the second add DC blocking capacitor 16 of the add signal channel.

[0025] The add coupling structure 18 is provided with two parallel coupling lines between the add circulator 17 and the second connector 21 . The coupling line close to the add circulator 17 is connected to the add coupling interface 19 , and the coupling line close to the second connector 21 is connected to the add load resistor 20 .

[0026] The lower signal channel includes a first lower DC blocking capacitor 30, a first lower diode 31, a second lower diode 32, a second lower DC blocking capacitor 36 and a lower coupling structure 38 connected in sequence; the second lower DC blocking capacitor 36 and the lower coupling structure 38 are connected via a lower circulator 37, and the lower circulator 37 is also connected to a fifth connector 43 via a second lower microstrip line 42.

[0027] A lower bias circuit 33, a lower bypass capacitor 34 and a first lower microstrip line 35 are sequentially connected between the second lower diode 32 and the second lower DC blocking capacitor 36 of the lower signal channel.

[0028] The downlink coupling structure 38 is provided with two parallel coupling lines between the downlink circulator 37 and the third connector 41 . The coupling line close to the downlink circulator 37 is connected to the downlink coupling interface 39 , and the coupling line close to the third connector 41 is connected to the downlink load resistor 40 .

[0029] In this embodiment, the components mainly include a high-power PIN switch and a two-way circulator; the switch is used to switch the signal input from the first connector 1 to the output of the second connector 21 or the third connector 41, and the circulator is used to feed the received signal to the output end during reception, so as to realize transmission and reception at the same port and use the same antenna. The coupling interface can be used for internal calibration.

[0030] The high-power signal is input into the component through the first connector 1, and first passes through the middle microstrip line 2 to the matching capacitor 3 and the microstrip line T-junction 4. The matching capacitor 3 is used for input end matching. During debugging, the capacitor will be fine-tuned according to the specific situation to achieve a better in-band standing wave. The T-junction 4 divides the signal into two upper and lower signals. Take the upper signal output and the lower signal off as an example for analysis. The signal passes through the first lower DC blocking capacitor 30 of the lower branch and enters the first lower diode 31 and the second lower diode 32. Since the first lower diode 31 and the second lower diode 32 are in the on state at this time, they are equivalent to a short circuit to the ground. A large amount of signals cannot pass through the diode and then enter the next level. They can only be reflected back to the T-junction 4 through the first lower DC blocking capacitor 30 and enter the first upper DC blocking capacitor 10. After passing through the first upper diode 11 and the second upper diode 12, it enters the upper bias circuit 13 of the diode. Since the first uplink diode 11 and the second uplink diode 12 are in a reverse bias state, the diodes are equivalent to capacitors, and the signal can pass smoothly. The uplink bias circuit 13 reflects the signal entering the uplink bias circuit 13 through the uplink bypass capacitor 14 via a quarter-wavelength transmission line, and the DC signal is fed in from the first uplink microstrip line 15 to control the forward and reverse bias of the diode. The signal passes through the second uplink DC-isolating capacitor 16 and then passes through the isolator (i.e., circulator 17), at which time the RF impedance has been matched to 50Ω. The function of the circulator 17 is to separate the receiving and transmitting signals. For the transmission signal coming from the second uplink DC-isolating capacitor 16, it passes through the isolator and enters the uplink coupling structure 18, which is composed of parallel coupling lines and is used to couple a part of the energy into the receiving system to perform internal calibration on the amplitude and phase of the receiving system. The uplink load resistor 20 is used to absorb reverse energy.

[0031] Since the first lower diode 31 and the second lower diode 32 are in a short-circuit state, a short-circuit path is formed through the first lower capacitor 30 and the microstrip T-junction 4. The structure is related to the frequency. Combined with the matching effect of the matching capacitor 3 and the microstrip T-junction 4, the relative bandwidth of the switch of this structure can reach 20%~30%.

[0032] When receiving, the signal enters from the second interface 21, passes through the circulator 17, and is output from the second microstrip line 22 and the fourth connector 23, and then enters the low noise amplifier module behind. For transmission, the signal is input from the first connector 1 and output from the second connector 21; for reception, the signal is input from the second connector 21 and output from the fourth connector 23. In this way, the switching of the transmission signal and the separation of the reception signal are realized.

[0033] The microstrip line high-power switch of this solution has strong versatility, and the bias circuit, matching circuit, DC blocking capacitor, etc. can be changed to achieve different frequencies and different structures.

[0034] In the description of the embodiments of the present utility model, it is necessary to understand that the terms "upper", "lower", "front", "back", "left", "right", "vertical", "horizontal", "center", "top", "bottom", "top", "bottom", "inside", "outside", "inner side", "outer side" and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present utility model and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present utility model. Among them, "inside" refers to an internal or enclosed area or space. "Periphery" refers to the area surrounding a specific component or a specific area.

[0035] In the description of the embodiments of the present utility model, the terms "first", "second", "third", and "fourth" are used for descriptive purposes only and cannot be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first", "second", "third", and "fourth" may explicitly or implicitly include one or more of the features. In the description of the present utility model, unless otherwise specified, the meaning of "multiple" is two or more.

[0036] In the description of the embodiments of the present invention, it should be noted that, unless otherwise clearly specified and limited, the terms "install", "connect", "connect", and "assemble" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a direct connection, or an indirect connection through an intermediate medium, or it can be the internal communication of two components. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0037] In the description of the embodiments of the present invention, specific features, structures, materials or characteristics may be combined in a suitable manner in any one or more embodiments or examples.

[0038] In the description of the embodiments of the present utility model, it should be understood that "-" and "~" represent the range between two values, and the range includes the endpoints. For example: "AB" represents a range greater than or equal to A and less than or equal to B. "A~B" represents a range greater than or equal to A and less than or equal to B.

[0039] In the description of the embodiments of the present utility model, the term "and / or" herein is only a kind of association relationship of describing the associated objects, indicating that there may be three relationships, for example, A and / or B can represent: A exists alone, A and B exist at the same time, and B exists alone. In addition, the character " / " herein generally indicates that the associated objects before and after are in an "or" relationship.

[0040] Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that various changes, modifications, substitutions and variations may be made to the embodiments without departing from the principles and spirit of the present invention, and that the scope of the present invention is defined by the appended claims and their equivalents.

Claims

1. A high-power transceiver switching component, characterized in that: The invention comprises a PIN switch and an isolator; the PIN switch connects a first joint (1), a second joint (21) and a third joint (41); the PIN switch comprises a middle microstrip line (2), a microstrip line T-junction (4), an upper signal channel and a lower signal channel; the microstrip line T-junction (4) respectively connects the middle microstrip line (2), the upper signal channel and the lower signal channel; and the upper signal channel and the lower signal channel are both provided with an isolator.

2. A high-power transceiver switching component according to claim 1, characterized in that: A matching capacitor (3) is provided between the middle microstrip line (2) and the microstrip line T-junction (4).

3. A high-power transceiver switching component according to claim 1, characterized in that: The isolator comprises an upper circulator (17) and a lower circulator (37), wherein the upper circulator (17) is provided with an upper signal channel; and the lower circulator (37) is provided with a lower signal channel.

4. A high-power transceiver switching component according to claim 3, characterized in that: The added signal channel comprises a first added DC blocking capacitor (10), a first added diode (11), a second added diode (12), a second added DC blocking capacitor (16) and an added coupling structure (18) which are connected in sequence; the second added DC blocking capacitor (16) and the added coupling structure (18) are connected via an added circulator (17); the added circulator (17) is also connected to a fourth connector (23) via a second added microstrip line (22).

5. A high-power transceiver switching component according to claim 4, characterized in that: An uplink bias circuit (13), an uplink bypass capacitor (14) and a first uplink microstrip line (15) are sequentially connected between the second uplink diode (12) and the second uplink DC blocking capacitor (16) of the uplink signal channel.

6. A high-power transceiver switching component according to claim 4, characterized in that: The added-path coupling structure (18) is provided with two parallel coupling lines between the added-path circulator (17) and the second connector (21), the coupling line close to the added-path circulator (17) is connected to the added-path coupling interface (19), and the coupling line close to the second connector (21) is connected to the added-path load resistor (20).

7. A high-power transceiver switching component according to claim 3, characterized in that: The lower signal channel comprises a first lower DC blocking capacitor (30), a first lower diode (31), a second lower diode (32), a second lower DC blocking capacitor (36) and a lower coupling structure (38) which are connected in sequence; the second lower DC blocking capacitor (36) and the lower coupling structure (38) are connected via a lower circulator (37); the lower circulator (37) is further connected to a fifth connector (43) via a second lower microstrip line (42).

8. A high-power transceiver switching component according to claim 7, characterized in that: A lower bias circuit (33), a lower bypass capacitor (34) and a first lower microstrip line (35) are sequentially connected between the second lower diode (32) and the second lower DC blocking capacitor (36) of the lower signal channel.

9. A high-power transceiver switching component according to claim 7, characterized in that: The downlink coupling structure (38) is provided with two parallel coupling lines between the downlink circulator (37) and the third connector (41), the coupling line close to the downlink circulator (37) is connected to the downlink coupling interface (39), and the coupling line close to the third connector (41) is connected to the downlink load resistor (40).

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