Crucible and crystal pulling device

Abstract

The utility model relates to the technical field of single crystal growth devices, in particular to a crucible and a crystal pulling device. The crucible comprises a crucible main body and a retardant, the inner wall of the crucible body is connected with a retardant, the crucible body is used for containing molten silicon, and the melting point of the retardant is larger than that of the molten silicon; the blockers comprise transverse blockers and / or vertical blockers, the transverse blockers are connected with the inner side wall of the crucible main body, and the transverse blockers surround the inner side wall of the crucible main body to form an annular structure; the vertical retardant is connected with the inner side wall of the crucible body, and the vertical retardant and the center line of the crucible body are located in the same plane. Natural convection of molten silicon close to the inner side wall of the crucible is blocked by the transverse blockers, forced convection of the molten silicon close to the inner side wall of the crucible is blocked by the vertical blockers, the strength of the natural convection and the forced convection of the molten silicon can be weakened, and the scouring erosion strength of the convection of the molten silicon to the interior of the crucible is greatly reduced; and the oxygen dissolved in the molten silicon is greatly reduced.

Description

Technical Field

[0001] The utility model relates to the technical field of single crystal growth devices, in particular to a crucible and a crystal pulling device. Background Art

[0002] The growth of single crystal silicon is generally carried out in a crucible. Polycrystalline silicon material is added to the crucible, and after heating, melting, seeding, necking, shoulder expansion, equal diameter, and tailing, a single crystal silicon rod is obtained. During the growth of the single crystal silicon rod, the molten silicon in the crucible has natural convection caused by uneven heating and forced convection caused by the crucible rotation. Under the action of the two convections, the erosion of the crucible by the molten silicon increases. The erosion of the crucible causes silicon dioxide to dissolve into the molten silicon, which greatly increases the oxygen content of the molten silicon, thereby greatly increasing the oxygen content in the single crystal silicon rod.

[0003] At present, the crystal pulling device for controlling the oxygen impurity content in single crystal silicon mainly uses a magnetic field to suppress the convection of molten silicon, thereby controlling and reducing the oxygen content in the single crystal silicon rod.

[0004] However, the above-mentioned crystal pulling device has a complex structure and high equipment cost. Utility Model Content

[0005] In view of this, the utility model aims to provide a crucible and a crystal pulling device to solve the problems of the existing crystal pulling device for controlling and reducing the oxygen content in the single crystal silicon rod, which has a complex structure and high equipment cost.

[0006] In order to achieve the above object, the technical solution of the utility model is implemented as follows:

[0007] In a first aspect, an embodiment of the utility model provides a crucible, which includes a crucible body and a barrier; the inner wall of the crucible body is connected to the barrier, the crucible body is used to contain molten silicon, and the melting point of the barrier is greater than the melting point of the molten silicon; the barrier includes a transverse barrier and / or a vertical barrier, the transverse barrier is connected to the inner side wall of the crucible body, and the transverse barrier surrounds the inner side wall of the crucible body to form an annular structure; the vertical barrier is connected to the inner side wall of the crucible body, and the vertical barrier and the center line of the crucible body are located in the same plane.

[0008] The utility model discloses a crucible. When the crucible is in use, the molten silicon in the crucible forms natural convection and forced convection. The natural convection of the molten silicon close to the inner wall of the crucible is blocked by a lateral blocker, and the strength of the natural convection of the molten silicon will be greatly weakened, so that the scouring and erosion strength of the natural convection of the molten silicon on the inside of the crucible is greatly reduced, and the oxygen dissolved in the molten silicon is greatly reduced. And / or, the forced convection of the molten silicon close to the inner wall of the crucible is blocked by a vertical blocker, and the strength of the forced convection of the molten silicon will be greatly weakened, so that the scouring and erosion strength of the forced convection of the molten silicon on the inside of the crucible is greatly reduced, and the oxygen dissolved in the molten silicon is greatly reduced. The reduction of the oxygen content in the molten silicon can reduce the oxygen content in the single crystal silicon rod, and realize the growth of the single crystal silicon rod with low oxygen content. The lateral blocker and / or the vertical blocker reduce the scouring and erosion effect of the molten silicon on the crucible, and can also extend the service life of the crucible. Moreover, the crucible reduces the oxygen content of the molten silicon, and has the advantages of simple structure and relatively low cost.

[0009] Optionally, in the height direction of the crucible body, the transverse blocker is located at 1 / 3 to 2 / 3 of the crucible body.

[0010] Optionally, the transverse blocker is perpendicular to the center line of the crucible body.

[0011] Optionally, the transverse blocker is provided with at least one circle; when the transverse blocker is provided with at least two circles, the transverse blockers are arranged at intervals along the center line direction of the crucible body.

[0012] Optionally, the crucible body and the barrier are an integrally formed part.

[0013] Optionally, the material of the barrier is quartz or silicon nitride.

[0014] Optionally, the vertical blockers include at least two, and the lower ends of the at least two vertical blockers extend to the center of the bottom of the crucible body and intersect at the center of the bottom of the crucible.

[0015] Optionally, at least two of the vertical blockers are evenly distributed around the center line of the crucible body.

[0016] Optionally, the blocker includes a transverse blocker and a vertical blocker, and the upper end of the vertical blocker is connected to the transverse blocker.

[0017] In a second aspect, an embodiment of the utility model further provides a crystal pulling device, which includes a furnace body and the above-mentioned crucible, wherein the crucible is arranged in the furnace body.

[0018] Compared with the prior art, the utility model:

[0019] (1) The lateral obstruction of the crucible can block the natural convection of the molten silicon next to the inner wall of the crucible. The intensity of the natural convection of the molten silicon will be greatly weakened, thereby greatly reducing the intensity of the erosion of the crucible by the natural convection of the molten silicon, and greatly reducing the oxygen dissolved in the molten silicon. The reduction in the intensity of natural convection and the oxygen content in the molten silicon can also reduce the oxygen content of the molten silicon transported to the molten silicon liquid surface, thereby reducing the oxygen content in the single crystal silicon rod. The lateral obstruction reduces the erosion effect of the molten silicon on the crucible and extends the service life of the crucible.

[0020] (2) The vertical blockers of the crucible can block the forced convection of the molten silicon next to the inner wall of the crucible. The intensity of the forced convection of the molten silicon will be greatly weakened, thereby greatly reducing the intensity of the erosion and corrosion of the crucible by the forced convection of the molten silicon. The oxygen dissolved in the molten silicon is greatly reduced, and the oxygen content in the single crystal silicon rod will also be greatly reduced, achieving the growth of single crystal silicon rods with low oxygen content. The vertical blockers reduce the erosion and corrosion of the crucible by the molten silicon and extend the service life of the crucible.

[0021] (3) The material of the barrier of the utility model is silicon nitride, which has a melting point greater than that of molten silicon and does not contain oxygen. Therefore, it is possible to effectively avoid introducing oxygen into the molten silicon and avoid increasing the oxygen content in the molten silicon.

[0022] The above description is only an overview of the technical solution of the utility model. In order to more clearly understand the technical means of the utility model, it can be implemented in accordance with the contents of the specification. In order to make the above and other purposes, features and advantages of the utility model more obvious and easy to understand, the specific implementation methods of the utility model are listed below. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] In order to more clearly illustrate the embodiments of the utility model or the technical solutions in the prior art, the drawings required for describing the embodiments are briefly introduced below.

[0024] Figure 1 It is a structural schematic diagram of a cross-sectional view of a crucible according to the first embodiment of the utility model;

[0025] Figure 2 It is a structural schematic diagram of a cross-sectional view of a crucible according to a second embodiment of the utility model;

[0026] Figure 3 It is a structural schematic diagram of a top view of a crucible according to an embodiment of the utility model;

[0027] Figure 4 The crucible of the present invention is used as a schematic diagram Figure 1 ;

[0028] Figure 5The crucible of the present invention is used as a schematic diagram Figure 2 ;

[0029] Figure 6 It is a schematic diagram of the structure of a crucible without any obstruction;

[0030] Figure 7 This is a diagram showing the use of a crucible without any obstruction. Figure 1 ;

[0031] Figure 8 This is a diagram showing the use of a crucible without any obstruction. Figure 2 .

[0032] Description of reference numerals:

[0033] 10 - crucible body; 11 - horizontal blocker; 12 - vertical blocker; 13 - columnar straight arm section; 14 - crucible bottom; 15 - transition section; 20 - crucible. DETAILED DESCRIPTION

[0034] The exemplary embodiments of the present invention will be described in more detail below with reference to the accompanying drawings. Although the exemplary embodiments of the present invention are shown in the accompanying drawings, it should be understood that the present invention can also be implemented in various forms and should not be limited by the embodiments described herein. On the contrary, these embodiments are provided to enable a more thorough understanding of the present invention and to fully convey the scope of the present invention to those skilled in the art.

[0035] The present application embodiment discloses a crucible 20, referring to Figure 1 , which shows a schematic structural diagram of a cross-sectional view taken along the center line of the crucible 20 in an embodiment of the present application. The crucible 20 includes a crucible body 10 and a barrier; the inner wall of the crucible body 10 is connected to the barrier, the crucible body 10 is used to hold molten silicon, and the melting point of the barrier is greater than the melting point of molten silicon; the barrier includes a transverse barrier 11, which is connected to the inner side wall of the crucible body 10, and the transverse barrier 11 surrounds the inner side wall of the crucible body 10 to form an annular structure.

[0036] Reference Figure 6 , which shows a schematic diagram of the structure of a crucible without an obstruction. When the crucible is in use, heaters are arranged around the outer side of the crucible. Figure 7As shown, under the heating of the heater, the molten silicon is heated and floats around the crucible, and sinks in the center of the crucible due to cooling, forming natural convection. The molten silicon next to the crucible 20 scours and erodes the inner wall of the crucible 20 under natural convection. When no obstruction is set on the inner wall of the crucible 20, the inner wall of the crucible 20 cannot block the molten silicon under convection. The natural convection will become stronger and stronger under the condition of continuous heat supply, and the scouring and erosion effect on the inner wall of the crucible 20 will also become stronger and stronger. The scoured and eroded silicon dioxide enters the molten silicon, causing the oxygen content in the molten silicon to increase.

[0037] In the crucible 20 of the embodiment of the present application, the inner wall of the crucible body 10 is connected to the barrier, the melting point of the barrier is greater than the melting point of molten silicon, and the barrier does not chemically react with the molten silicon, and the barrier has a stable structure in the molten silicon.

[0038] In the embodiment of the present application, the barrier includes a transverse barrier 11, which is connected to the inner side wall of the crucible body 10, and the transverse barrier 11 surrounds the inner side wall of the crucible body 10 to form an annular structure. When the crucible 20 is in use, the molten silicon in the crucible 20 forms natural convection, referring to Figure 4 As shown, the natural convection of the molten silicon next to the inner wall of the crucible 20 is blocked by the lateral blocker 11, and the intensity of the natural convection of the molten silicon will be greatly weakened, thereby greatly reducing the intensity of the scouring and erosion of the interior of the crucible 20 by the natural convection of the molten silicon, and greatly reducing the oxygen dissolved in the molten silicon. The reduction in the intensity of natural convection and the oxygen content in the molten silicon can also reduce the oxygen content of the molten silicon transported to the molten silicon liquid surface, and further reduce the oxygen content in the single crystal silicon rod. That is, the crucible 20 in the embodiment of the present application can reduce the oxygen content in the molten silicon by providing the lateral blocker 11; the lateral blocker 11 reduces the scouring and erosion effect of the molten silicon on the crucible 20, and can also extend the service life of the crucible 20; moreover, the crucible 20 also has the advantages of simple structure and relatively low cost.

[0039] Optional, see Figure 1 As shown, the crucible body 10 includes a columnar straight arm section 13, a crucible bottom 14 and a transition section 15. The columnar straight arm section 13 is a hollow cylindrical structure. The transition section 15 connects the columnar straight arm section 13 and the crucible bottom 14. The transition section 15 can be an arc-shaped structure. The cavity formed by the columnar straight arm section 13, the transition section 15 and the crucible bottom 14 can be used to carry molten silicon. In the embodiment of the present application, the columnar straight arm section 13 is connected to the lateral blocker 11.

[0040] Optional, see Figure 1 As shown, in the height direction of the crucible body 10, that is, Figure 1In the middle H direction, the transverse blocker 11 is located at 1 / 3 to 2 / 3 of the crucible body 10. The inventors found that in the height direction of the crucible body 10, the 1 / 3 to 2 / 3 of the crucible body 10 is a position where the natural convection of molten silicon is relatively strong. Within this range, the erosion effect of molten silicon on the inner wall of the crucible 20 is also relatively strong. The transverse blocker 11 is arranged at 1 / 3 to 2 / 3 of the crucible body 10, which can effectively reduce the natural convection intensity of the molten silicon close to the inner wall of the crucible 20, thereby greatly reducing the erosion intensity of the natural convection of the molten silicon on the inside of the crucible 20, and greatly reducing the oxygen dissolved in the molten silicon.

[0041] In the height direction of the crucible body 10, the specific position of the transverse blocker 11 in the crucible body 10 can be set according to the use requirements. For example, the transverse blocker 11 is located at 1 / 3 of the height direction of the crucible body 10; the transverse blocker 11 is located at 2 / 5 of the height direction of the crucible body 10; the transverse blocker 11 is located at 7 / 15 of the height direction of the crucible body 10; the transverse blocker 11 is located at 8 / 15 of the height direction of the crucible body 10; the transverse blocker 11 is located at 3 / 5 of the height direction of the crucible body 10; the transverse blocker 11 is located at 2 / 3 of the height direction of the crucible body 10.

[0042] Optional, see Figure 1 As shown, the transverse blocker 11 is perpendicular to the center line of the crucible body 10. The transverse blocker 11 is evenly arranged in the crucible body 10, which can avoid the disturbance of the molten silicon by the transverse blocker 11 during the process of pulling the single crystal silicon rod, so that the crucible 20 is subjected to a relatively uniform force in all directions, the crucible 20 can be stably rotated, and the normal pulling of the single crystal silicon rod is avoided.

[0043] Optionally, the transverse blockers 11 are provided with at least one circle; when the transverse blockers 11 are provided with at least two circles, the transverse blockers 11 are arranged at intervals along the center line direction of the crucible body 10 .

[0044] Reference Figure 1 , which shows a schematic diagram of the structure of the lateral blocker 11 with a circle, referring to Figure 2 , which shows a schematic diagram of a structure in which the lateral blocker 11 is provided with two circles; of course, the lateral blocker 11 can also be provided with three circles, etc. The number of lateral blockers 11 is set according to the use requirements, and the number of lateral blockers 11 needs to comprehensively consider the influence of the lateral blocker 11 on natural convection, and the influence of natural convection in the main body of the crucible 20 on the temperature of molten silicon during the crystal pulling process. Under the premise of ensuring the quality of crystal pulling, the lateral blocker 11 reduces the erosion effect of molten silicon on the inner wall of the crucible 20.

[0045] Optionally, the barrier is a silicon nitride material or a quartz material. The melting points of silicon nitride and quartz are greater than the melting point of molten silicon, and silicon nitride and quartz do not chemically react with molten silicon. When the barrier is made of quartz, the quartz is the same material as the crucible, which can avoid introducing impurities into the molten silicon. When the barrier is made of silicon nitride, silicon nitride does not contain oxygen, so it can effectively avoid introducing oxygen into the molten silicon and avoid increasing the oxygen content in the molten silicon.

[0046] Optionally, the cross section of the transverse blocker 11 is at least one of a rectangle, a partial circle, a trapezoid, and a triangle.

[0047] Optionally, the crucible body 10 and the blocker are an integrally formed part. In this case, the crucible body 10 and the blocker will not move relative to each other, thereby preventing the relative movement between the blocker and the crucible body 10 from affecting the crucible rotation.

[0048] In the crucible 20 of the embodiment of the present application, the lateral barrier 11 can block the natural convection of the molten silicon adjacent to the inner wall of the crucible 20, thereby significantly weakening the natural convection intensity of the molten silicon adjacent to the inner wall of the crucible 20, greatly reducing the scouring and erosion intensity of the interior of the crucible 20 by the natural convection of the molten silicon, and greatly reducing the oxygen dissolved in the molten silicon, thereby reducing the oxygen content in the single crystal silicon rod.

[0049] The present application also discloses a crucible 20, referring to Figure 3 , which shows a schematic diagram of the structure of a top view of a crucible 20 in an embodiment of the present application. The crucible 20 includes a crucible body 10 and a barrier; the inner wall of the crucible body 10 is connected to the barrier, the crucible body 10 is used to hold molten silicon, and the melting point of the barrier is greater than the melting point of molten silicon; the barrier includes a vertical barrier 12, the vertical barrier 12 is connected to the inner side wall of the crucible body 10, and the vertical barrier 12 and the center line of the crucible body 10 are located in the same plane.

[0050] Reference Figure 6 , which shows a schematic diagram of the structure of a crucible without an obstruction. When the crucible is in use, in order to provide a relatively stable growth interface for the growth of a single crystal silicon rod, it is necessary to cause forced convection to resist natural convection to a certain extent through the rotation of the crucible. Figure 8 As shown in the figure, the forced convection caused by the crucible rotation is a horizontal circumferential flow. Under the action of forced convection, the molten silicon at the inner wall of the crucible erodes the inner wall of the crucible in the horizontal direction, dissolving the eroded silicon dioxide into the molten silicon, greatly increasing the oxygen content in the molten silicon.

[0051] In the crucible 20 of the embodiment of the present application, the melting point of the barrier is greater than the melting point of the molten silicon, and the barrier does not chemically react with the molten silicon, and the barrier has a stable structure in the molten silicon.

[0052] In the embodiment of the present application, the barrier includes a vertical barrier 12, which is connected to the inner wall of the crucible body 10, and the vertical barrier 12 and the center line of the crucible body 10 are located in the same plane, that is, the vertical barrier 12 is arranged vertically. When the crucible 20 is in use, the molten silicon in the crucible 20 has forced convection, referring to Figure 5 As shown, the forced convection of molten silicon next to the inner wall of the crucible 20 is blocked by the vertical blocker 12, and the intensity of the forced convection of molten silicon will be greatly weakened, so that the erosion intensity of the forced convection of molten silicon on the inside of the crucible 20 is greatly reduced, and the oxygen dissolved in the molten silicon is greatly reduced. The oxygen content in the single crystal silicon rod will also be greatly reduced, and the growth of single crystal silicon rods with low oxygen content is achieved. In the embodiment of the present application, the crucible 20 can reduce the oxygen content in the molten silicon by setting the vertical blocker 12, and also has the advantages of simple structure and relatively low cost.

[0053] Optionally, the vertical blockers 12 include at least two, and the lower ends of the at least two vertical blockers 12 extend to the center of the bottom 14 of the crucible body 10 and intersect at the center of the bottom 14 .

[0054] Specifically, when the crucible 20 is in use, the convection intensity of the molten silicon at the center of the bottom 14 of the crucible body 10 is also relatively high, and the erosion intensity of the molten silicon on the bottom 14 of the crucible body 10 is also relatively high. When the lower ends of at least two vertical blockers 12 extend to the center of the bottom 14 of the crucible body 10 and intersect at the center of the bottom 14, the portion of the vertical blockers 12 located at the bottom 14 can block the forced convection of the molten silicon adjacent to the inner wall of the bottom 14, weaken the convection intensity of the molten silicon adjacent to the inner wall of the bottom 14, thereby greatly reducing the erosion intensity of the forced convection of the molten silicon on the inner wall of the bottom 14, and greatly reducing the oxygen dissolved in the molten silicon.

[0055] In the embodiment of the present application, the vertical blockers 12 are provided in corresponding quantities according to the use requirements. For example, two vertical blockers 12 are provided; for example, three vertical blockers 12 are provided; for example, referring to Figure 5 As shown, four vertical blockers 12 are provided; for example, five vertical blockers 12 are provided; for another example, six vertical blockers 12 are provided.

[0056] The number of vertical obstructions 12 needs to comprehensively consider the effect of the vertical obstructions 12 on forced convection and the effect of forced convection in the main body of the crucible 20 on resisting natural convection. On the premise of ensuring the quality of crystal pulling, the vertical obstructions 12 should reduce the scouring and erosion effect of molten silicon on the inner wall of the crucible 20.

[0057] Optionally, at least two vertical blockers 12 are evenly arranged around the center line of the crucible body 10 so that the crucible 20 is subjected to relatively uniform force in all directions, thereby avoiding the vertical blockers 12 disturbing the molten silicon during the process of pulling single crystal silicon rods and affecting normal crystal pulling.

[0058] Optional, see Figure 1 As shown, the upper end of the vertical blocker 12 is connected to the transverse blocker 11 of the blocker. And the transverse blocker 11 protrudes the vertical blocker 12 into the crucible body 10.

[0059] Further, see Figure 2 As shown, when there are at least two transverse blocks 11 , the upper end of the vertical blocker 12 is connected to the lowermost transverse blocker 11 .

[0060] In the crucible of the embodiment of the present application, when there are at least two transverse blockers 11 , the vertical blocker 12 may also connect all the transverse blockers 11 , and the upper end of the vertical blocker 12 is connected to the uppermost transverse blocker 11 .

[0061] Optionally, during the growth of single crystal silicon, there is natural convection caused by uneven heating and forced convection caused by crucible rotation. Under the action of the two convections, the erosion effect of the molten silicon on the quartz crucible 20 is greatly increased. The eroded silicon dioxide dissolves into the molten silicon, greatly increasing the oxygen content of the molten silicon, thereby greatly increasing the oxygen content in the crystalline silicon.

[0062] Reference Figure 1 As shown, in the crucible 20 of the embodiment of the present application, the blocker includes a transverse blocker 11 and a vertical blocker 12. The transverse blocker 11 is connected to the inner side wall of the crucible body 10, and the transverse blocker 11 surrounds the inner side wall of the crucible body 10 to form an annular structure; the vertical blocker 12 is connected to the inner side wall of the crucible body 10, and the vertical blocker 12 and the center line of the crucible body 10 are located in the same plane. The upper end of the vertical blocker 12 is connected to the transverse blocker 11 of the blocker, and the lower end of the vertical blocker 12 extends to the center of the crucible bottom 14 and intersects at the center of the crucible bottom 14.

[0063] The horizontal blocker 11 blocks the natural convection of the molten silicon next to the inner wall of the crucible 20, and the vertical blocker 12 blocks the forced convection of the molten silicon next to the inner wall of the crucible 20, the transition section 15 and the bottom 14 of the crucible. The horizontal blocker 11 and the vertical blocker 12 work together to greatly weaken the natural convection and forced convection of the molten silicon in the crucible 20, thereby greatly reducing the erosion intensity of the natural convection and forced convection of the molten silicon on the inside of the crucible 20, and greatly reducing the oxygen dissolved in the molten silicon. The oxygen content in the molten silicon is greatly reduced, and the oxygen content in the crystal will also be greatly reduced accordingly, achieving the growth of single crystal silicon with a low oxygen content. Among them, the oxygen content in single crystal silicon rods can be reduced by 1ppma-2ppma (ppma is the abbreviation of parts per million, indicating that there can be only one oxygen atom in one million silicon atoms), the Topcon (Topcon is the abbreviation of Tunnel Oxide Passivating Contacts technology) battery efficiency can be increased by 0.08%, and the proportion of defective batteries with concentric circle problems can be reduced by 80%.

[0064] Optionally, the material of the lateral blocker 11 and the vertical blocker 12 can be high-purity silicon nitride. The melting point of high-purity silicon nitride is greater than the melting point of molten silicon, and silicon nitride does not chemically react with molten silicon. Silicon nitride does not contain oxygen, and can effectively avoid introducing oxygen into the molten silicon and increasing the oxygen content in the molten silicon.

[0065] Optionally, the cross section of the vertical barrier 12 is at least one of a rectangle, a partial circle, a trapezoid, and a triangle. Figure 5 , which shows a schematic structural diagram of a vertical barrier 12 having a rectangular cross section.

[0066] In the crucible 20 of the embodiment of the present application, the vertical barrier 12 can block the forced convection of the molten silicon adjacent to the inner wall of the crucible 20, the transition section 15 and the bottom 14 of the crucible, thereby significantly weakening the intensity of the forced convection of the molten silicon adjacent to the inner wall of the crucible 20, the transition section 15 and the bottom 14 of the crucible, and greatly reducing the scouring and erosion intensity of the inside of the crucible 20 by the forced convection of the molten silicon, and greatly reducing the oxygen dissolved in the molten silicon, thereby reducing the oxygen content in the single crystal silicon rod.

[0067] The embodiment of the present application discloses a crystal pulling device, which includes a furnace body and the above-mentioned crucible 20, wherein the crucible 20 is arranged in the furnace body.

[0068] Since the crucible 20 is provided with a transverse blocker 11 and a vertical blocker 12, the transverse blocker 11 blocks the natural convection of the molten silicon close to the inner wall of the crucible 20, and the vertical blocker 12 blocks the forced convection of the molten silicon close to the inner wall of the crucible 20, the transition section 15 and the bottom 14 of the crucible. The transverse blocker 11 and the vertical blocker 12 work together to greatly weaken the natural convection and forced convection of the molten silicon in the crucible 20, thereby greatly reducing the erosion intensity of the natural convection and forced convection of the molten silicon on the inside of the crucible 20, greatly reducing the oxygen content in the molten silicon, and the oxygen content in the crystal will also be greatly reduced, so as to achieve the growth of single crystal silicon with low oxygen content. Obviously, the single crystal silicon rod pulled by using the above crucible in the crystal pulling device has the advantage of low oxygen content. The single crystal silicon rod is suitable for the production of N-type silicon wafers, and can improve the quality of N-type silicon wafers, and can reduce the probability of the occurrence of oxygen precipitation concentric circles.

[0069] It should be noted that, in this article, relational terms such as first and second, etc. are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the terms "include", "comprise" or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or device. In the absence of further restrictions, the elements defined by the sentence "comprise a ..." do not exclude the existence of other identical elements in the process, method, article or device including the elements.

[0070] Each embodiment in this specification is described in a related manner, and the same or similar parts between the embodiments can be referred to each other, and each embodiment focuses on the differences from other embodiments. For the embodiments of the device, electronic device, computer-readable storage medium and computer program products containing instructions, since they are basically similar to the method embodiments, the description is relatively simple, and the relevant parts can be referred to the partial description of the method embodiments.

[0071] The above description is only a preferred embodiment of the present invention and is not intended to limit the protection scope of the present invention. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention are included in the protection scope of the present invention.

Claims

1. A crucible, characterized in that: It comprises a crucible body (10) and a barrier; the inner wall of the crucible body (10) is connected to the barrier, the crucible body (10) is used to contain molten silicon, and the melting point of the barrier is greater than the melting point of the molten silicon; The blockers include horizontal blockers (11) and / or vertical blockers (12). The transverse blocker (11) is connected to the inner side wall of the crucible body (10), and the transverse blocker (11) surrounds the inner side wall of the crucible body (10) to form an annular structure; The vertical blocker (12) is connected to the inner side wall of the crucible body (10), and the vertical blocker (12) and the center line of the crucible body (10) are located in the same plane.

2. The crucible according to claim 1, characterized in that In the height direction of the crucible body (10), the transverse blocker (11) is located at 1 / 3 to 2 / 3 of the height of the crucible body (10).

3. The crucible according to claim 1, characterized in that The transverse blocker (11) is perpendicular to the center line of the crucible body (10).

4. The crucible according to claim 1, characterized in that The transverse blocker (11) is provided with at least one circle; when the transverse blocker (11) is provided with at least two circles, the transverse blockers (11) are arranged at intervals along the center line direction of the crucible body (10).

5. The crucible according to claim 1, characterized in that The crucible body (10) and the barrier are an integrally formed part.

6. The crucible according to claim 1, characterized in that The material of the barrier is quartz or silicon nitride.

7. The crucible according to claim 1, characterized in that The vertical blockers (12) include at least two, and the lower ends of the at least two vertical blockers (12) extend to the center of the bottom (14) of the crucible body (10) and intersect at the center of the bottom (14).

8. The crucible according to claim 1, characterized in that At least two of the vertical blockers (12) are evenly distributed around the center line of the crucible body (10).

9. The crucible according to claim 1, characterized in that The blocker comprises a transverse blocker (11) and a vertical blocker (12), and the upper end of the vertical blocker (12) is connected to the transverse blocker (11).

10. A crystal pulling device, characterized in that: The invention comprises a furnace body and the crucible according to any one of claims 1 to 9, wherein the crucible is arranged in the furnace body.

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