Doping device and single crystal furnace
By designing a doping device including heating chassis and gas transmission components in single crystal silicon production, the problem of difficult control of the sublimation volatility temperature of red phosphorus dopant is solved, and an efficient and precise doping process is achieved, and the resistance is improved rate accuracy and dopant utilization.
Patent Information
- Application Number
- CN202420226235.1
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-01-30
- Publication Date
- 2025-02-14
- Estimated Expiration
- 2034-01-30
AI Technical Summary
In the prior art, it is difficult for the red phosphorus dopant to accurately control the sublimation volatility temperature when preparing the N-type master alloy, resulting in excessive volatility, large resistivity deviation, high cost, and low dopant utilization.
A doping device is designed, including a housing, a doping assembly and a gas delivery assembly. A heating chassis is provided in the doping assembly, the red phosphorus dopant is heated and converted into doped gas, and the gas delivery assembly transports the doped gas to the silicon melt of the single crystal furnace to achieve precise doping.
By precisely controlling the sublimation volatilization temperature of the red phosphorus dopant, the utilization rate of the dopant is improved, the cost is reduced, and the accuracy of the resistivity of the round rod of the phosphorus-doped single-crystal silicon master alloy is improved.
Smart Images
Figure CN222476825U_ABST
Abstract
Description
Technical Field
[0001] The present application relates to the technical field of single crystal silicon production and manufacturing, and in particular to a doping device and a single crystal furnace. Background Art
[0002] With the rapid development of new energy technologies, the application of solar power generation has shown explosive growth in recent years. Solar monocrystalline silicon wafers are divided into N-type and P-type, which are used to make solar cells. The earliest doping element of P-type monocrystalline silicon wafers was boron, but boron will combine with oxygen in the single crystal to form a boron-oxygen complex, which can easily cause light attenuation of the cell. N-type crystalline silicon solar cells have the advantages of high minority carrier lifetime, no light attenuation, and low temperature coefficient. They have received widespread attention in the manufacture of high-efficiency solar cells. As the market's requirements for solar cell efficiency become higher and higher, N-type phosphorus-doped monocrystalline silicon solar cells will gradually become the mainstream.
[0003] At present, when producing single crystal silicon rods, the resistivity is controlled by doping a master alloy with a specific resistivity. In the prior art, the master alloy with a specific resistivity is mainly produced by pulling a heavily doped silicon rod in a single crystal furnace. Specifically, the high-purity silicon raw material in the quartz crucible in the single crystal furnace is melted, and a dopant of a specific type and weight is added to the silicon melt, and then the Czochralski method is implemented to grow the doped single crystal silicon round rod, and finally the required specific type of heavily doped master alloy is produced.
[0004] Since the sublimation temperature of red phosphorus required for the preparation of N-type master alloy is 416°C at normal pressure, while the temperature of silicon melt is more than 1400°C, the sublimation and volatilization temperature of red phosphorus cannot be accurately controlled during the doping process, resulting in rapid sublimation of red phosphorus dopant when encountering high temperature, which may cause explosion in severe cases. The general preparation method of heavily doped phosphorus master alloy is to directly add solid red phosphorus to the molten silicon in the single crystal furnace through a pipeline. It is difficult to accurately control the doping temperature during doping, which leads to a large amount of red phosphorus volatilization, which can reach 10% to 30%. Therefore, the actual resistivity of the obtained N-type master alloy deviates greatly from the target resistivity value, and its manufacturing cost is high. In addition, after the doping is completed, some phosphorus dopants still remain in the doping container, and the utilization rate of the phosphorus dopant is reduced. Utility Model Content
[0005] In view of this, the purpose of the present application is to provide a doping device and a single crystal furnace, aiming to solve the technical problems in the prior art.
[0006] To achieve the above objectives, the technical solutions adopted in this application are as follows:
[0007] In a first aspect, an embodiment of the present application provides a doping device, comprising:
[0008] A housing having a first cavity;
[0009] A doping component, wherein the doping component is disposed in the first cavity, the doping component has a second cavity, the second cavity is used to store a dopant, and the doping component further comprises a heating base plate, the heating base plate is used to heat the dopant and convert the dopant into a doping gas;
[0010] A gas delivery component is arranged on one side of the doping component, the gas delivery component is connected to the doping component, and the gas delivery component is used to transfer the doping gas in the doping component to the silicon melt in the single crystal furnace.
[0011] In one embodiment of the first aspect, the housing comprises:
[0012] A material storage bin, wherein the material storage bin has the first volume;
[0013] A cover body is arranged at one end of the material storage bin away from the gas delivery component, and the cover body is connected to the material storage bin.
[0014] In one embodiment of the first aspect, the housing further comprises:
[0015] An air extraction pipe, the air extraction pipe is passed through the cover body and communicated with the first cavity;
[0016] A first switch, wherein the first switch is arranged on the exhaust pipe and is located on a side of the cover body away from the first cavity, and the first switch is used to close or open the exhaust pipe.
[0017] In one embodiment of the first aspect, the doping component includes:
[0018] A doping body, wherein the doping body has the second cavity;
[0019] A feed hopper, the feed hopper being arranged at one end of the doping body close to the cover body, the feed hopper being communicated with the second cavity, and the feed hopper being used to add a dopant into the second cavity;
[0020] a second switch, the second switch being arranged at an end of the feed hopper away from the cover body, and the second switch being used to control the feed hopper to feed material into the second cavity;
[0021] Wherein, the heating base is arranged at an end of the doping body away from the cover body.
[0022] In one embodiment of the first aspect, the doping component further comprises:
[0023] An air inlet pipe, the air inlet pipe is arranged at one end of the doping body away from the heating base plate, the air inlet pipe is communicated with the second cavity, and the air inlet pipe is used to introduce gas into the second cavity;
[0024] A third switch is provided on the air intake pipe, and is used to control the opening or closing of the air intake pipe.
[0025] In one embodiment of the first aspect, the doping component further includes a first gas pipe, which is disposed in the second cavity, passes through the heating base, is connected to the gas delivery component, and is used to deliver the doping gas in the second cavity to the gas delivery component.
[0026] In one embodiment of the first aspect, the gas delivery assembly comprises:
[0027] A support cylinder, the support cylinder is arranged at one end of the storage bin away from the cover body, and the support cylinder is connected to the storage bin;
[0028] A second gas pipeline, the second gas pipeline is inserted into the support tube, one end of the second gas pipeline close to the storage bin is connected and communicated with the first gas pipeline, and the second gas pipeline is used to transport the doping gas in the first gas pipeline;
[0029] A third gas pipe, wherein the third gas pipe is sleeved on the second gas pipe and is located between the support tube and the second gas pipe, the third gas pipe is slidably and sealingly connected to the second gas pipe, and an end of the third gas pipe away from the first gas pipe is used to extend into the single crystal furnace and transport the doping gas in the second gas pipe to the single crystal furnace.
[0030] In one embodiment of the first aspect, the gas delivery assembly further comprises:
[0031] A heat-insulating layer, which is disposed between the second gas pipeline and the support tube, and is used to heat and insulate the doping gas in the second gas pipeline;
[0032] A fourth switch, wherein the fourth switch is arranged at an end of the thermal insulation layer away from the first gas pipe, and the fourth switch is used to limit the third gas pipe.
[0033] In one of the embodiments of the first aspect, a temperature measuring instrument is further provided on the shell, and the temperature measuring instrument is provided on a side of the shell adjacent to the gas delivery component, and the temperature measuring instrument is used to control the heating temperature of the heating base.
[0034] In a second aspect, an embodiment of the present application provides a single crystal furnace, comprising the doping device described in any of the above embodiments.
[0035] Compared with the prior art, the beneficial effects of the present application are as follows: the present application proposes a doping device and a single crystal furnace. The doping device includes a shell, a doping component and a gas delivery component, the shell has a first cavity; the doping component is arranged in the first cavity, the doping component has a second cavity, the second cavity is used to store a dopant, the doping component also includes a heating base plate, the heating base plate is used to heat the dopant and convert the dopant into a doping gas; the gas delivery component is arranged on one side of the doping component, the gas delivery component is connected to the doping component, and the gas delivery component is used to transfer the doping gas in the doping component to the silicon melt of the single crystal furnace. The present application heats the dopant through the heating base plate in the doping component and sublimates it into a doping gas, and then inputs the doping gas into the silicon melt of the single crystal furnace through the gas delivery component, so that it is fully doped, thereby improving the utilization rate of the red phosphorus dopant, reducing the cost, and improving the accuracy of the resistivity of the phosphorus-doped single crystal silicon master alloy round rod. BRIEF DESCRIPTION OF THE DRAWINGS
[0036] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings required for use in the embodiments will be briefly introduced below. It should be understood that the following drawings only show certain embodiments of the present application and therefore should not be regarded as limiting the scope. For ordinary technicians in this field, other related drawings can be obtained based on these drawings without paying creative work.
[0037] Figure 1 A schematic diagram of the structure of the doping device in the present application from one perspective is shown;
[0038] Figure 2 Another perspective structural schematic diagram of the doping device in the present application is shown;
[0039] Figure 3 Another perspective structural schematic diagram of the doping device in the present application is shown;
[0040] Figure 4 A schematic diagram of the structure of the doping device in the present application when it is not doped is shown;
[0041] Figure 5 A schematic diagram of the structure of the doping device during doping in the present application is shown.
[0042] Description of main component symbols:
[0043] 100-doping device; 110-shell; 111-storage bin; 112-cover; 113-exhaust pipe; 114-first switch; 115-thermometer; 116-first cavity; 120-doping assembly; 121-doping body; 122-second cavity; 123-heating base; 124-feed hopper; 125-second switch; 126-intake pipe; 127-third switch; 128-first gas pipe; 130-gas supply assembly; 131-support tube; 132-second gas pipe; 133-third gas pipe; 134-insulation layer; 135-vacuum meter; 101-dopant; 102-silicon melt; 200-single crystal furnace; 201-furnace cover; 202-quartz crucible. DETAILED DESCRIPTION
[0044] The embodiments of the present application are described in detail below, and examples of the embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals throughout represent the same or similar elements or elements having the same or similar functions. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain the present application, and cannot be understood as limiting the present application.
[0045] In the description of the present application, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise", "axial", "radial", "circumferential" and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present application and simplifying the description, and do not indicate or imply that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the present application.
[0046] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of the features. In the description of this application, the meaning of "plurality" is two or more, unless otherwise clearly and specifically defined.
[0047] In this application, unless otherwise clearly specified and limited, the terms "installed", "connected", "connected", "fixed" and the like should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements. For ordinary technicians in this field, the specific meanings of the above terms in this application can be understood according to specific circumstances.
[0048] In the present application, unless otherwise clearly specified and limited, a first feature being “above” or “below” a second feature may mean that the first and second features are in direct contact, or the first and second features are in indirect contact through an intermediate medium. Moreover, a first feature being “above”, “above”, and “above” a second feature may mean that the first feature is directly above or obliquely above the second feature, or simply means that the first feature is higher in level than the second feature. A first feature being “below”, “below”, and “below” a second feature may mean that the first feature is directly below or obliquely below the second feature, or simply means that the first feature is lower in level than the second feature.
[0049] like Figure 1 , Figure 2 and Figure 3 As shown, an embodiment of the present application provides a doping device 100. The doping device 100 includes a housing 110, a doping component 120 and a gas delivery component 130.
[0050] The housing 110 has a first cavity 116 .
[0051] Specifically, the doping component 120 is disposed in the first cavity 116 , and the doping component 120 has a second cavity 122 , and the second cavity 122 is used to store the dopant 101 , and the dopant 101 is, for example, red phosphorus.
[0052] In addition, the doping component 120 further includes a heating base plate 123, and the heating base plate 123 is used to heat the dopant 101 and convert the dopant 101 into a doping gas, that is, for example, to sublime solid red phosphorus into gaseous red phosphorus.
[0053] The gas delivery component 130 is disposed on one side of the doping component 120 , and the gas delivery component 130 is connected to the doping component 120 .
[0054] In this embodiment, the doping gas in the doping component 120 is transmitted to the silicon melt 102 contained in the quartz crucible 202 of the single crystal furnace 200 through the gas delivery component 130 .
[0055] In the related art, the general preparation method of heavily doped phosphorus master alloy is to directly add solid red phosphorus into the molten silicon of the single crystal furnace through a pipeline. It is difficult to accurately control the doping temperature during doping, which leads to a large amount of red phosphorus volatilization, so that the actual resistivity of the obtained N-type master alloy deviates greatly from the target resistivity value, and the manufacturing cost is high. After the doping is completed, some phosphorus dopants still remain in the doping container, and the utilization rate of the phosphorus dopant is low.
[0056] In this embodiment, the doping device 100 includes a shell 110, a doping component 120 and a gas delivery component 130, wherein this embodiment heats the dopant 101 through the heating base plate 123 in the doping component 120 and sublimates it into a doping gas, and then inputs the doping gas into the silicon melt 102 of the single crystal furnace 200 through the gas delivery component 130 to make it fully doped, thereby avoiding the situation where the solid red phosphorus volatilizes in the single crystal furnace 200 due to the high temperature in the single crystal furnace 200, and this embodiment further improves the utilization rate of the red phosphorus dopant, reduces the cost, and improves the accuracy of the resistivity of the phosphorus-doped single crystal silicon master alloy round rod.
[0057] Alternatively, if Figure 3 and Figure 4 As shown, the housing 110 includes a storage bin 111 and a cover 112 .
[0058] The storage bin 111 has the first cavity 116 .
[0059] In addition, the cover body 112 is disposed at one end of the storage bin 111 away from the gas delivery component 130, and the cover body 112 is connected to the storage bin 111, that is, the cover body 112 and the storage bin 111 are, for example, detachably connected.
[0060] Optionally, the housing 110 further includes an exhaust pipe 113 and a first switch 114 .
[0061] The exhaust pipe 113 is disposed through the cover 112 , and the exhaust pipe 113 is in communication with the first cavity 116 . Specifically, in this embodiment, the gas in the first cavity 116 is exhausted through the exhaust pipe 113 .
[0062] In addition, the first switch 114 is disposed on the exhaust pipe 113, and the first switch 114 is located on the side of the cover 112 away from the first cavity 116. The first switch 114 of this embodiment is used to close or open the exhaust pipe 113, that is, to control the exhaust pipe 113 to exhaust or stop the first cavity 116.
[0063] Optionally, the first switch 114 is, for example, an electromagnetic switch.
[0064] Alternatively, if Figure 3 and Figure 5 As shown, the doping assembly 120 includes a doping body 121 , a feed hopper 124 and a second switch 125 .
[0065] The doping body 121 has the second cavity 122, and the heating base 123 is arranged at one end of the doping body 121 away from the cover 112. Specifically, in this embodiment, the dopant 101 for preparing the doping gas is placed in the doping body 121, and then the dopant 101 is placed on the heating base 123 of the doping assembly 120.
[0066] In addition, the feed hopper 124 is arranged at one end of the doping body 121 close to the cover body 112 , and the feed hopper 124 is connected to the second cavity 122 , that is, the feed hopper 124 is penetrated through the top of the doping body 121 and further connected to the second cavity 122 .
[0067] The second switch 125 is disposed at one end of the feed hopper 124 away from the cover body 112 , and the second switch 125 is used to control the feed hopper 124 to feed materials into the second cavity 122 .
[0068] Specifically, when the second switch 125 is turned on, the feed hopper 124 can add materials to the second cavity 122 , and when the second switch 125 is closed, the feed hopper 124 can stop adding materials to the second cavity 122 .
[0069] Optionally, the second switch 125 is, for example, an electromagnetic switch.
[0070] In this embodiment, the dopant 101 is added into the second cavity 122 through the feed hopper 124. Specifically, by opening the cover 112 and the second switch 125, the dopant 101 is placed in the feed hopper 124, and then the dopant 101 slides into the second cavity 122 through the feed hopper 124 and falls onto the heating bottom plate 123. Further, the dopant 101 is heated and sublimated by the heating bottom plate 123.
[0071] Optionally, a thermometer 115 is further provided on the housing 110. The thermometer 115 is provided on a side of the housing 110 adjacent to the gas delivery assembly 130. In this embodiment, the heating temperature of the heating base 123 is controlled by the thermometer 115, that is, by detecting the temperature of the heating base 123, the heating temperature of the heating base 123 is controlled so that the heating temperature of the heating base 123 is 350-500°C.
[0072] Optionally, the heating temperature of the heating base plate 123 is, for example, 350° C., 400° C., 420° C. or 500° C.
[0073] This embodiment uses the heating base 123 and the thermometer 115 to precisely control the sublimation and volatilization temperature of red phosphorus, thereby controlling the doping rate of red phosphorus, thereby avoiding the situation where the heating temperature is too high and the red phosphorus sublimates and volatilizes too quickly, and further improves the accuracy of the resistivity of the phosphorus-doped single crystal silicon master alloy round rod.
[0074] Alternatively, if Figure 3 and Figure 5 As shown, the doping component 120 further includes an air inlet pipe 126 and a third switch 127 .
[0075] The air inlet pipe 126 is disposed at one end of the doping body 121 away from the heating base plate 123, and the air inlet pipe 126 is connected to the second cavity 122. In this embodiment, gas is introduced into the second cavity 122 through the air inlet pipe 126, and the gas is, for example, argon.
[0076] In addition, the third switch 127 is disposed on the air inlet pipe 126 . In this embodiment, the third switch 127 is used to control the opening or closing of the air inlet pipe 126 , thereby controlling whether the air inlet pipe 126 introduces argon gas into the second cavity 122 .
[0077] Optionally, the third switch 127 is, for example, an electromagnetic switch.
[0078] Specifically, in this embodiment, the air inlet pipe 126 and the exhaust pipe 113 cooperate to modulate the air pressure in the doping device 100 to be consistent with the air pressure in the single crystal furnace 200, thereby facilitating the input of the doping gas in the second cavity 122 into the silicon melt 102 of the single crystal furnace 200.
[0079] In addition, during the doping process, the present embodiment can also pass argon gas into the second cavity 122 via the gas inlet pipe 126, and then input the doping gas remaining in the second cavity 122 into the silicon melt 102 of the single crystal furnace 200, thereby further improving the sufficiency of red phosphorus doping and improving the accuracy of the resistivity of the mother alloy rod after doping.
[0080] Alternatively, if Figure 3 and Figure 5 As shown, the doping assembly 120 further includes a first gas delivery pipe 128. The first gas delivery pipe 128 is disposed in the second cavity 122, and the first gas delivery pipe 128 is sequentially passed through the heating base plate 123 and one end of the storage bin 111 away from the cover body 112, and then communicated with the gas delivery assembly 130.
[0081] In this embodiment, the doping gas in the second cavity 122 is transported to the gas delivery component 130 through the first gas delivery pipe 128 .
[0082] Alternatively, if Figure 3 and Figure 5 As shown, the gas delivery assembly 130 includes a support tube 131 , a second gas delivery pipe 132 and a third gas delivery pipe 133 .
[0083] The support tube 131 is disposed at one end of the storage bin 111 away from the cover body 112 , and the support tube 131 is connected to the storage bin 111 , and the connection method is, for example, welding or bolt connection.
[0084] In this embodiment, the material storage bin 111 is supported on the single crystal furnace 200 by a support cylinder 131. Specifically, one end of the support cylinder 131 away from the material storage bin 111 is connected to the furnace cover 201 of the single crystal furnace 200, and the support cylinder 131 is located between the material storage bin 111 and the furnace cover 201 of the single crystal furnace 200, thereby supporting the material storage bin 111 on the single crystal furnace 200.
[0085] Optionally, the second gas pipe 132 is disposed in the support tube 131, and one end of the second gas pipe 132 close to the storage bin 111 is connected and communicated with the first gas pipe 128. The second gas pipe 132 is used to transport the doping gas in the first gas pipe 128.
[0086] Optionally, the third gas pipe 133 is sleeved on the second gas pipe 132 , and the third gas pipe 133 is located between the support tube 131 and the second gas pipe 132 .
[0087] Among them, the third gas pipe 133 and the second gas pipe 132 are slidably and sealingly connected, that is, the third gas pipe 133 can slide relative to the second gas pipe 132, and when the third gas pipe 133 slides to the end of the second gas pipe 132 away from the storage bin 111, the end of the third gas pipe 133 close to the second gas pipe 132 is sealed and clamped with the second gas pipe 132, thereby preventing leakage of the impurity gas in the second gas pipe 132 and the third gas pipe 133.
[0088] Specifically, the third gas pipe 133 in this embodiment slides on the second gas pipe 132 so that one end away from the first gas pipe 128 extends into the silicon melt 102 of the single crystal furnace 200, and transports the doping gas in the second gas pipe 132 to the silicon melt 102 of the single crystal furnace 200, so that the doping gas is fully doped with the silicon melt 102.
[0089] It should be noted that, under the premise of ensuring that one end of the third gas pipe 133 away from the storage bin 111 is located below the liquid surface of the silicon melt 102 in the single crystal furnace 200, the third gas pipe 133 can be slowly moved up and down, and the quartz crucible 202 containing the silicon melt 102 in the single crystal furnace 200 can be kept at a rotation speed of, for example, 0.5 to 3 rpm, so that the silicon melt 102 can be doped at different depths and different positions to improve the uniformity of the distribution of the dopant 101 in the silicon melt 102.
[0090] Optionally, the rotation speed of the quartz crucible 202 containing the silicon melt 102 in the single crystal furnace 200 is maintained at, for example, 0.5 rpm, 1 rpm, or 3 rpm.
[0091] Alternatively, if Figure 3 and Figure 5 As shown, the gas delivery component 130 also includes a heat-insulating layer 134 and a fourth switch.
[0092] The thermal insulation layer 134 is disposed between the second gas pipe 132 and the support tube 131 , and the thermal insulation layer 134 is used to heat and insulate the doping gas in the second gas pipe 132 .
[0093] In addition, the fourth switch is arranged at one end of the insulation layer 134 away from the first gas pipe 128, and the fourth switch is used to limit the third gas pipe 133, that is, when the fourth switch is turned on, the third gas pipe 133 can slide out of the support tube 131, and when the fourth switch is closed, the third gas pipe 133 can be prevented from sliding out of the support tube 131.
[0094] Optionally, the fourth switch is, for example, an electromagnetic switch.
[0095] Specifically, Figure 4 As shown, when no doping is performed, the fourth switch is closed, the third gas pipe 133 is located in the support tube 131 and is sleeved in the second gas pipe 132 , and the insulation layer 134 is located between the third gas pipe 133 and the support tube 131 .
[0096] like Figure 5 As shown, when doping is required, the fourth switch is turned on, and the third gas pipe 133 slides into the single crystal furnace 200, and then extends into the silicon melt 102 of the single crystal furnace 200. At this time, the insulation layer 134 is located between the support tube 131 and the second gas pipe 132, and the doping gas in the second gas pipe 132 is heated and insulated to prevent the doping gas in the second gas pipe 132 from being converted into solid and attached to the inner wall of the second gas pipe 132, thereby further reducing the waste of the dopant 101.
[0097] Optionally, the gas delivery component 130 further includes a vacuum meter 135, which is disposed at one end of the second gas delivery pipe 132 away from the first gas delivery pipe 128, and is used to detect the vacuum degree in the second gas delivery pipe 132. When the vacuum degree in the doping device 100 is consistent with the internal air pressure of the single crystal furnace 200, doping can be performed.
[0098] Optionally, a heat preservation and heating layer may be provided on the inner wall of the doping body 121 to prevent the doping gas from being converted into a solid and adhering to the inner wall of the doping body 121 when cooled, thereby improving the utilization rate of the dopant 101 .
[0099] This embodiment provides a single crystal furnace having the doping device 100 described in any of the above embodiments, and thus having all the beneficial effects of the doping device 100, which will not be described in detail here.
[0100] In the description of this specification, the description with reference to the terms "one embodiment", "some embodiments", "example", "specific example", or "some examples" etc. means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present application. In this specification, the schematic representations of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described may be combined in any one or more embodiments or examples in a suitable manner. In addition, those skilled in the art may combine and combine the different embodiments or examples described in this specification and the features of the different embodiments or examples, without contradiction.
[0101] Although the embodiments of the present application have been shown and described above, it can be understood that the above embodiments are exemplary and cannot be understood as limitations on the present application. Ordinary technicians in this field can change, modify, replace and modify the above embodiments within the scope of the present application.
Claims
1. A doping device, characterized in that: include: A housing having a first cavity; A doping component, wherein the doping component is disposed in the first cavity, the doping component has a second cavity, the second cavity is used to store a dopant, and the doping component further comprises a heating base plate, the heating base plate is used to heat the dopant and convert the dopant into a doping gas; A gas delivery component is arranged on one side of the doping component, the gas delivery component is connected to the doping component, and the gas delivery component is used to transfer the doping gas in the doping component to the silicon melt in the single crystal furnace.
2. The doping device according to claim 1, characterized in that: The housing comprises: A material storage bin, wherein the material storage bin has the first volume; A cover body is arranged at one end of the material storage bin away from the gas delivery component, and the cover body is connected to the material storage bin.
3. The doping device according to claim 2, characterized in that: The housing further comprises: An air extraction pipe, the air extraction pipe is passed through the cover body and communicated with the first cavity; A first switch, wherein the first switch is arranged on the exhaust pipe and is located on a side of the cover body away from the first cavity, and the first switch is used to close or open the exhaust pipe.
4. The doping device according to claim 2, characterized in that: The doping component comprises: A doping body, wherein the doping body has the second cavity; A feed hopper, the feed hopper being arranged at one end of the doping body close to the cover body, the feed hopper being communicated with the second cavity, and the feed hopper being used to add a dopant into the second cavity; a second switch, the second switch being arranged at an end of the feed hopper away from the cover body, and the second switch being used to control the feed hopper to feed material into the second cavity; Wherein, the heating base is arranged at an end of the doping body away from the cover body.
5. The doping device according to claim 4, characterized in that: The doping assembly further comprises: An air inlet pipe, the air inlet pipe is arranged at one end of the doping body away from the heating base plate, the air inlet pipe is communicated with the second cavity, and the air inlet pipe is used to introduce gas into the second cavity; A third switch is provided on the air intake pipe, and is used to control the opening or closing of the air intake pipe.
6. The doping device according to claim 5, characterized in that: The doping component also includes a first gas pipe, which is arranged in the second cavity, passes through the heating base, is connected to the gas delivery component, and is used to transport the doping gas in the second cavity to the gas delivery component.
7. The doping device according to claim 6, characterized in that: The gas delivery assembly comprises: A support cylinder, the support cylinder is arranged at one end of the storage bin away from the cover body, and the support cylinder is connected to the storage bin; A second gas pipeline, the second gas pipeline is inserted into the support tube, one end of the second gas pipeline close to the storage bin is connected and communicated with the first gas pipeline, and the second gas pipeline is used to transport the doping gas in the first gas pipeline; A third gas pipe, wherein the third gas pipe is sleeved on the second gas pipe and is located between the support tube and the second gas pipe, the third gas pipe is slidably and sealingly connected to the second gas pipe, and an end of the third gas pipe away from the first gas pipe is used to extend into the single crystal furnace and transport the doping gas in the second gas pipe to the single crystal furnace.
8. The doping device according to claim 7, characterized in that: The gas delivery assembly also includes: A heat-insulating layer, which is disposed between the second gas pipeline and the support tube, and is used to heat and insulate the doping gas in the second gas pipeline; A fourth switch, wherein the fourth switch is arranged at an end of the thermal insulation layer away from the first gas pipe, and the fourth switch is used to limit the third gas pipe.
9. The doping device according to claim 1, characterized in that: The shell is also provided with a temperature measuring instrument, which is arranged on a side of the shell adjacent to the gas delivery assembly, and is used to control the heating temperature of the heating chassis.
10. A single crystal furnace, characterized in that: A doping device comprising the doping device according to any one of claims 1 to 9.