Photon integrated chip

Abstract

The utility model relates to a photon integrated chip, comprising a chip main body, a generation module used for generating continuous light with different wavelengths, a wave combination beat frequency module, a signal conversion module and an antenna are integrated on the chip main body, the output end of the generation module is connected with the wave combination beat frequency module, and the output end of the signal conversion module is connected with the antenna. The wave combining and beat frequency module is used for combining any two beams of continuous light output by the generation module and outputting a wave combining and beat frequency signal, the output end of the wave combining and beat frequency module is connected with the signal conversion module, and the signal conversion module is used for converting the wave combining and beat frequency signal output by the wave combining and beat frequency module into a millimeter wave signal. The output end of the signal conversion module is connected with the antenna, and the antenna is used for transmitting the millimeter wave signals output by the signal conversion module outwards. According to the scheme based on the photo-generated millimeter wave technology, the generated millimeter wave signal has the advantages of high power, wide bandwidth, low loss, electromagnetic interference resistance, tunability and the like.

Description

Technical Field

[0001] The utility model relates to the technical field of microwave photons, in particular to a photon integrated chip. Background Art

[0002] In traditional electrical signal transmission, there are serious problems such as signal attenuation and low efficiency. Intel once stated in a blog post that in a data center internal circuit, if PCB is used for transmission, when the physical distance between two chips exceeds 1 meter, the signal strength received by the receiving end is only one ten-thousandth of that of the transmitting end. The large bandwidth of the fiber-optic millimeter wave system can not only reduce energy consumption and heat generation, but also realize large-capacity optical interconnection, improve the quality of data transmission, and effectively solve problems such as network congestion and delay.

[0003] Microwave photonics is a new discipline that integrates microwave technology and photonic technology, that is, using optical devices and technologies to generate, process, control and transmit high-frequency microwave signals. It has the advantages of large bandwidth, low loss, light weight, and anti-electromagnetic interference, and has been widely used in wireless communications, radar, sensing, imaging and instrumentation. As the large bandwidth of modern photonic technology can break through the bandwidth limitation of traditional RF optical millimeter wave systems (less than tens of GHz), the unique ability of microwave photonics in generating and processing ultra-wideband, high-frequency microwave signals makes it a promising alternative for broadband microwave applications.

[0004] At present, the technology of photogenerated microwave is realized based on discrete components, such as optoelectronic oscillator photogenerated millimeter wave system, etc. Separate components have difficult-to-solve problems such as high power consumption, large volume, low optical frequency conversion efficiency and high noise. In the future large-capacity optical fiber communication photogenerated millimeter wave system, integrated chips that can provide high speed, high responsiveness and high saturation output are very necessary. Utility Model Content

[0005] In order to reduce the power consumption of a photogenerated millimeter wave system, reduce the volume of a photogenerated millimeter wave system, reduce link optical loss, and improve photoelectric conversion efficiency, the present application provides a photonic integrated chip.

[0006] The present application provides a photonic integrated chip, including a chip body, on which a generation module for generating continuous light of different wavelengths, a wave combining and beating frequency module, a signal conversion module and an antenna are integrated, the output end of the generation module is connected to the wave combining and beating frequency module, the output end of the wave combining and beating frequency module is connected to the signal conversion module, the output end of the signal conversion module is connected to the antenna, and the signal conversion module is a module that converts the received wave combining and beating frequency signal output by the wave combining and beating frequency module into a millimeter wave signal.

[0007] The beneficial effects of the utility model are as follows: by integrating the generation module, the wave-combining beat frequency module, the signal conversion module and the antenna on the chip body, the volume of the optical millimeter wave system is reduced, the integrated design reduces the number of interfaces and conversions of the optical signal during the transmission process, and reduces the link optical loss. The wave-combining beat frequency module combines any two laser beams output by the generation module, and the signal conversion module converts the wave-combining beat frequency signal output by the wave-combining beat frequency module into a millimeter wave signal, thereby improving the photoelectric conversion efficiency, and sending the millimeter wave signal outward through the antenna.

[0008] Furthermore, the generation module includes a laser array and a plurality of temperature controllers, the laser array includes a plurality of array-distributed lasers, and each of the lasers is connected to one of the temperature controllers.

[0009] The beneficial effect of adopting the above further solution is that by controlling the operating temperature of the laser through the temperature controller, the wavelength of the laser can be tuned, so that the generated millimeter wave signal has a tunable effect.

[0010] Furthermore, the wave combining and beating frequency module comprises an arrayed waveguide grating, and the light outlet of the laser array is connected to the light inlet of the arrayed waveguide grating.

[0011] The beneficial effect of adopting the above further scheme is that the arrayed waveguide grating combines any two laser beams of different wavelengths output by the laser array to synthesize the two laser beams into one beam of light. During the combining process, due to the interference effect of the laser signals of two different wavelengths, a combined beat frequency signal corresponding to the two laser beams of different wavelengths can be obtained. The combined beat frequency signal is a difference frequency signal of the millimeter wave, which improves the accuracy of being detected by the signal conversion module.

[0012] Furthermore, the signal conversion module includes a semiconductor optical amplifier and a single-row carrier photodetector, the light outlet of the arrayed waveguide grating is connected to the light inlet of the semiconductor optical amplifier, and the light outlet of the semiconductor optical amplifier is connected to the light inlet of the single-row carrier photodetector.

[0013] The beneficial effect of adopting the above further scheme is that the combined wave beat frequency signal enters the semiconductor optical amplifier (SOA), and the semiconductor optical amplifier (SOA) can optically amplify the combined wave beat frequency signal to ensure that the combined wave beat frequency signal has sufficient strength when transmitted to the single carrier photodetector (UTC-PD), replacing the discrete device EDFA, and reducing the overall size and power consumption of the photonic integrated chip. The single carrier photodetector can effectively convert the combined wave beat frequency signal into a millimeter wave signal.

[0014] Furthermore, the antenna is a millimeter wave transmitting antenna, and the antenna is connected to the signal output port of the single-row carrier photodetector through a CPW line.

[0015] The beneficial effects of adopting the above further solution are: reducing the link loss of millimeter wave transmission and improving the efficiency and quality of signal transmission.

[0016] Furthermore, each of the laser, semiconductor optical amplifier and single-row carrier photodetector is a waveguide structure.

[0017] The beneficial effect of adopting the above further scheme is that the structural similarity between the laser and the semiconductor optical amplifier and the single-line carrier photodetector can achieve waveguide compatibility, thereby building a more compact and efficient photonic integrated chip, which helps to reduce the cost of the photonic integrated chip and improve the bandwidth and response speed of the photonic integrated chip.

[0018] Furthermore, the light outlet of the laser array is waveguide-connected to the light inlet of the arrayed waveguide grating.

[0019] The beneficial effect of adopting the above further scheme is: through the waveguide connection between the arrayed waveguide grating and the laser array, it can be ensured that the optical signal enters the arrayed waveguide grating directly and efficiently, reducing the loss of the optical signal during transmission, replacing the lens coupling of discrete components, and reducing material and optical path losses.

[0020] Furthermore, the light output port of the semiconductor optical amplifier is waveguide-connected to the light input port of the single-row carrier photodetector.

[0021] The beneficial effect of adopting the above further scheme is: through the waveguide connection between the semiconductor optical amplifier and the single-row carrier photodetector, it can be ensured that the amplified optical signal enters the single-row carrier photodetector directly and efficiently, thereby improving the sensitivity and response speed of the detector, replacing the discrete device EDFA, reducing the size and power consumption, and the connection with the optical devices on both sides is a waveguide structure, which reduces the optical path loss.

[0022] Furthermore, the single-row carrier photodetector has a responsivity greater than 0.3A / W, a half-power bandwidth greater than 150GHz, and a saturated optical power greater than 20mW. At an operating frequency of 100GHz, the output power of the radio frequency signal of the single-row carrier photodetector is greater than -8dBm.

[0023] The beneficial effect of adopting the above further scheme is: the single-line carrier photodetector has large bandwidth and high saturation output power characteristics, the generated millimeter wave output power is large, no electrical device amplifier is required, the components of the photogenerated millimeter wave system are reduced, and the power consumption is reduced.

[0024] Furthermore, the chip body includes a compound semiconductor substrate, and the laser array, each of the temperature controllers, the arrayed waveguide grating, the semiconductor optical amplifier and the single-row carrier photodetector are all integrated on the same plane of the compound semiconductor substrate.

[0025] The beneficial effect of adopting the above further solution is that by integrating different optoelectronic devices into one chip, the overall size of the optically generated millimeter wave system is greatly reduced, making it more suitable for miniaturized packaging. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] Figure 1 This is a structural block diagram of a photonic integrated chip according to an embodiment of the present application;

[0027] Figure 2 The present invention is a block diagram of the structure of the generation module and the signal conversion module according to the embodiment of the present application.

[0028] In the accompanying drawings, the components represented by the reference numerals are listed as follows:

[0029] 1. Generation module; 11. Laser; 12. Temperature controller; 2. Wave combining and beating frequency module; 21. Arrayed waveguide grating; 3. Signal conversion module; 31. Semiconductor optical amplifier; 32. Single-line carrier photodetector. DETAILED DESCRIPTION

[0030] The present application is further described in detail below in conjunction with the accompanying drawings.

[0031] like Figure 1 As shown, a photonic integrated chip includes a chip body, on which a generation module 1 for generating continuous light of different wavelengths, a wave combining and beating module 2, a signal conversion module 3 and an antenna are integrated, the output end of the generation module 1 is connected to the wave combining and beating module 2, the wave combining and beating module 2 is used to combine any two beams of continuous light output by the generation module 1 and output a wave combining and beating signal, the output end of the wave combining and beating module 2 is connected to the signal conversion module 3, the signal conversion module 3 is used to convert the wave combining and beating signal output by the wave combining and beating module 2 into a millimeter wave signal, the output end of the signal conversion module 3 is connected to the antenna, and the antenna is used to emit the millimeter wave signal output by the signal conversion module 3 to the outside.

[0032] In this embodiment, the millimeter wave signal is a signal of 30 to 300 GHz. The millimeter wave signal has a wide spectrum. By coordinating the use of various multiplexing technologies, the channel capacity can be greatly improved, and it is suitable for high-speed multimedia transmission services. The millimeter wave signal also has the following advantages: high reliability, high frequency makes it less susceptible to interference, can better resist the influence of rainy weather, and provide a stable transmission channel; good directionality, millimeter waves are greatly absorbed by various suspended particles in the air, making the transmission beam narrower, increasing the difficulty of eavesdropping, and suitable for short-distance point-to-point communication; the wavelength is extremely short, the required antenna size is very small, and it is easy to integrate large-scale antenna arrays in a small space.

[0033] By integrating the generation module 1, the wave combining and beating frequency module 2, the signal conversion module 3 and the antenna on the chip body and sending the millimeter wave signal outward through the antenna, the power consumption of the photogenerated millimeter wave system is reduced, the volume of the photogenerated millimeter wave system is reduced, the link optical loss is reduced, and the photoelectric conversion efficiency is improved.

[0034] In this embodiment, the continuous light may be a laser, and the laser may be generated by a laser 11 . The generating module 1 includes a laser array and a plurality of temperature controllers 12 . The laser array includes a plurality of array-distributed lasers 11 , and each of the lasers 11 is connected to a temperature controller 12 .

[0035] The laser 11 may be a DFB (Distributed Feedback) laser. The DFB laser is a laser based on a grating structure, and its output wavelength can be tuned by changing its operating temperature.

[0036] The DFB laser has a temperature tuning coefficient. According to the temperature tuning coefficient and the change value of the operating temperature, the wavelength change can be obtained. For example, the temperature tuning coefficient is 0.1nm / °C, that is, for every 1°C change in the operating temperature, the output wavelength of the DFB laser will change by 0.1nm. Therefore, by controlling the operating temperature of the DFB laser through the temperature controller 12 (heater), the wavelength of the DFB laser can be tuned.

[0037] In order to reduce the possibility of causing significant degradation to the performance of the laser 11, the operating temperature adjustment range of the DFB laser is limited. Exemplarily, the operating temperature adjustment range does not exceed 50°C. Therefore, the tuning range of a single DFB laser can be 3 to 5 nm.

[0038] In this embodiment, the laser array may include DFB lasers 1 to 9, a total of 9 lasers 11, and each DFB laser may be connected to a temperature controller 12. The output wavelength of each laser 11 in DFB lasers 1 to 9 may be different, and the output wavelength corresponding to each laser 11 may differ by about 1 nm.

[0039] In this embodiment, one of the DFB lasers can be used as a reference light source, and the other eight DFB lasers and the DFB laser corresponding to the reference light source output continuous light of different wavelengths. It is also possible to select any two DFB lasers in the laser array to work to output continuous light of different wavelengths. In this embodiment, the working purpose of a specific DFB laser can be achieved by powering a specific DFB laser. Since there are a large number of laser arrays and a large tunable wavelength range, a large RF output frequency range can be tuned.

[0040] In this embodiment, the wave combining beat frequency module 2 includes an arrayed waveguide grating 21, and the light outlet of the laser array is connected to the light inlet of the arrayed waveguide grating 21. Beat frequency is an electrical signal generated by two laser signals with different frequencies (or wavelengths) due to the interference effect, which is equal to the frequency difference between the two laser signals.

[0041] In this embodiment, the arrayed waveguide grating 21 (AWG) is used to combine any two laser beams with different wavelengths output by the laser array, and combine the two laser beams into one beam of light. During the combining process, due to the interference effect of the two laser signals with different wavelengths, a combined beat signal corresponding to the two laser beams with different wavelengths can be obtained. It is easy to understand that the combined beat signal is an optical signal.

[0042] The combined beat signal is the difference frequency signal between two laser beams of different wavelengths. According to the known relationship between the output wavelength and the frequency, such as 1nm is approximately equal to 125GHz, the difference frequency signal between two laser beams of different wavelengths can be calculated. For example, the wavelengths corresponding to the two high-frequency laser signals are 1550nm and 1549nm, respectively, and the corresponding frequencies are 193.5THz and 193.375THz, respectively. When the arrayed waveguide grating 21 (AWG) combines the two high-frequency laser signals, a difference frequency signal of 0.125THz is generated. The difference frequency signal is a millimeter wave signal that can be detected by the signal conversion module 3.

[0043] In this embodiment, the signal conversion module 3 includes a semiconductor optical amplifier 31 and a single-row carrier photodetector 32. The light output port of the arrayed waveguide grating 21 is connected to the light input port of the semiconductor optical amplifier 31, and the light output port of the semiconductor optical amplifier 31 is connected to the light input port of the single-row carrier photodetector 32.

[0044] The combined beat signal enters the semiconductor optical amplifier 31 (SOA), which can optically amplify the combined beat signal to ensure that the combined beat signal has sufficient strength when transmitted to the single-line carrier photodetector 32 (UTC-PD), replacing the discrete device EDFA and reducing the overall size and power consumption of the photonic integrated chip.

[0045] The combined beat signal amplified by the semiconductor optical amplifier 31 (SOA) enters the single carrier photodetector 32 (UTC-PD). The single carrier photodetector 32 (UTC-PD) has the characteristics of high-speed response, large bandwidth and high saturation output light rate, and can effectively convert the combined beat signal into a millimeter wave signal.

[0046] In this embodiment, the antenna is a millimeter wave transmitting antenna, and the antenna is connected to the signal output port of the single-row carrier photodetector 32 through a CPW line.

[0047] The single-row carrier photodetector 32 includes an S signal line, which is connected to the signal output port of the single-row carrier photodetector 32. The millimeter wave transmitting antenna is directly connected to the S signal line through a CPW line, replacing the gold wire welding connection between the two, reducing the link loss of the millimeter wave transmission and improving the efficiency and quality of signal transmission. It is easy to understand that the CPW line is a high-frequency signal transmission line with the characteristics of wide working frequency band, low transmission loss, small linear size, and convenient processing.

[0048] In this embodiment, each of the laser 11, the semiconductor optical amplifier 31 and the single-row carrier photodetector 32 is a waveguide structure.

[0049] The structural similarity between the laser 11, the semiconductor optical amplifier 31 and the single-line carrier photodetector 32 can achieve waveguide compatibility, thereby building a more compact and efficient photonic integrated chip, which helps to reduce the cost of the photonic integrated chip and improve the bandwidth and response speed of the photonic integrated chip. It is easy to understand that the waveguide structure is a closed structure that can transmit electromagnetic waves. Among them, the single-line carrier photodetector 32 can adopt an evanescent waveguide structure.

[0050] In this embodiment, the light outlet of the laser array is connected to the light inlet waveguide of the arrayed waveguide grating 21. The light outlet of the semiconductor optical amplifier 31 is connected to the light inlet waveguide of the single-row carrier photodetector 32.

[0051] The waveguide connection between the arrayed waveguide grating 21 and the laser array can ensure that the optical signal enters the arrayed waveguide grating 21 directly and efficiently, reducing the loss of the optical signal during transmission, replacing the lens coupling of discrete components, and reducing material and optical path losses.

[0052] The waveguide connection between the semiconductor optical amplifier 31 and the single-row carrier photodetector 32 can ensure that the amplified optical signal directly and efficiently enters the single-row carrier photodetector 32, thereby improving the sensitivity and response speed of the detector, replacing the discrete device EDFA, reducing the size and power consumption, and the connection with the optical devices on both sides is a waveguide structure, which reduces the optical path loss.

[0053] In this embodiment, the responsivity of the single-row carrier photodetector 32 is greater than 0.3A / W, the half-power bandwidth is greater than 150GHz, and the saturated optical power is greater than 20mW. At an operating frequency of 100GHz, the output power of the RF signal of the single-row carrier photodetector 32 is greater than -8dBm.

[0054] The single-row carrier photodetector 32 has a high responsivity (greater than 0.3 A / W), so that it can efficiently convert optical signals into electrical signals, reducing energy loss during the signal conversion process.

[0055] The half-power bandwidth is the 3dB bandwidth, and the half-power bandwidth is greater than 150GHz, so that the single-line carrier photodetector 32 can maintain efficient signal detection capability in a wide frequency range, and is suitable for high-speed, broadband optically generated millimeter-wave systems.

[0056] The saturation optical power greater than 20 mW ensures that the single-row carrier photodetector 32 can maintain stable performance under high optical power input and is not easily saturated, thereby improving the dynamic range and reliability of the optically generated millimeter wave system.

[0057] At an operating frequency of 100 GHz, the radio frequency signal output power of the single-row carrier photodetector 32 is greater than -8 dBm, so that the converted electrical signal can have sufficient power to facilitate subsequent amplification, transmission and processing.

[0058] The single-line carrier photodetector 32 has the characteristics of large bandwidth and high saturation output power, and generates a large millimeter wave output power, does not require an electrical device amplifier, reduces the number of components in the photogenerated millimeter wave system, and reduces power consumption.

[0059] In this embodiment, the chip body includes a compound semiconductor substrate, and the laser array, each of the temperature controllers 12, the arrayed waveguide grating 21, the semiconductor optical amplifier 31 and the single-row carrier photodetector 32 are all integrated on the same plane of the compound semiconductor substrate.

[0060] The compound semiconductor substrate may be an InP (Indium Phosphide) substrate, which has the characteristics of high saturated electron drift velocity, strong radiation resistance, high photoelectric conversion efficiency, etc. By integrating different optoelectronic devices into one chip, the overall size of the photogenerated millimeter wave system is greatly reduced, making it more suitable for miniaturized packaging.

[0061] The terms "comprises," "comprising," or any other variations thereof are intended to cover non-exclusive inclusion such that a process, method, article, or apparatus that includes a list of elements includes not only those elements but also other elements not expressly listed, or also includes elements inherent to such process, method, article, or apparatus.

[0062] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" and "second" may explicitly or implicitly include at least one of the features. In the description of the present utility model, the meaning of "plurality" is at least two, such as two, three, etc., unless otherwise clearly and specifically defined.

[0063] In the description of this specification, the description with reference to the terms "one embodiment", "some embodiments", "example", "specific example", or "some examples" etc. means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the utility model. In this specification, the schematic representations of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described may be combined in any one or more embodiments or examples in a suitable manner. In addition, those skilled in the art may combine and combine the different embodiments or examples described in this specification and the features of the different embodiments or examples, without contradiction.

[0064] Although the embodiments of the present invention have been shown and described above, it can be understood that the above embodiments are exemplary and cannot be understood as limitations of the present invention. Ordinary technicians in the field can change, modify, replace and modify the above embodiments within the scope of the present invention.

Claims

1. A photonic integrated chip, characterized in that: The invention comprises a chip body, on which a generation module for generating continuous light of different wavelengths, a wave combining and beating frequency module, a signal conversion module and an antenna are integrated. The output end of the generation module is connected to the wave combining and beating frequency module, the output end of the wave combining and beating frequency module is connected to the signal conversion module, the output end of the signal conversion module is connected to the antenna, and the signal conversion module is a module for converting the received wave combining and beating frequency signal output by the wave combining and beating frequency module into a millimeter wave signal.

2. A photonic integrated chip according to claim 1, characterized in that: The generating module comprises a laser array and a plurality of temperature controllers. The laser array comprises a plurality of lasers distributed in an array, and each of the lasers is connected to one of the temperature controllers.

3. A photonic integrated chip according to claim 2, characterized in that: The wave combining and beating frequency module comprises an arrayed waveguide grating, and the light outlet of the laser array is connected to the light inlet of the arrayed waveguide grating.

4. A photonic integrated chip according to claim 3, characterized in that: The signal conversion module comprises a semiconductor optical amplifier and a single-row carrier photodetector, the light outlet of the arrayed waveguide grating is connected to the light inlet of the semiconductor optical amplifier, and the light outlet of the semiconductor optical amplifier is connected to the light inlet of the single-row carrier photodetector.

5. A photonic integrated chip according to claim 4, characterized in that: The antenna is a millimeter wave transmitting antenna, and the antenna is connected to the signal output port of the single-row carrier photoelectric detector through a CPW line.

6. The photonic integrated chip according to claim 4, characterized in that: Each of the laser, semiconductor optical amplifier and single-row carrier photoelectric detector is a waveguide structure.

7. The photonic integrated chip according to claim 6, characterized in that: The light outlet of the laser array is waveguide-connected to the light inlet of the arrayed waveguide grating.

8. The photonic integrated chip according to claim 6, characterized in that: The light outlet of the semiconductor optical amplifier is waveguide-connected to the light inlet of the single-row carrier photodetector.

9. The photonic integrated chip according to claim 4, characterized in that: The single-row carrier photodetector has a responsivity greater than 0.3A / W, a half-power bandwidth greater than 150GHz, and a saturated optical power greater than 20mW. At an operating frequency of 100GHz, the output power of the radio frequency signal of the single-row carrier photodetector is greater than -8dBm.

10. The photonic integrated chip according to claim 4, characterized in that: The chip body comprises a compound semiconductor substrate, and the laser array, each of the temperature controllers, the arrayed waveguide grating, the semiconductor optical amplifier and the single-row carrier photodetector are all integrated on the same plane of the compound semiconductor substrate.

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