Self-adaptive D-band CMOS (complementary metal oxide semiconductor) ultra-low noise amplifier
By designing an adaptive noise adjustment and detection mechanism in a CMOS ultra-low noise amplifier, the problem of difficult automatic noise cancellation in the prior art is solved, and the design robustness and success rate are improved.
Patent Information
- Application Number
- CN202421263182.7
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-06-04
- Publication Date
- 2025-02-18
- Estimated Expiration
- 2034-06-04
AI Technical Summary
Existing low-noise amplifiers fail to achieve automatic noise cancellation, resulting in long design cycles and high risk of failure.
Design an adaptive D-band CMOS ultra-low noise amplifier, adjust the noise of the received radio frequency signal through two channels, generate two noises with equal amplitude and opposite phases, and set up a noise detector at the cancellation end for adaptive control. .
Automatic noise cancellation is achieved, which enhances the circuit's immune ability to environmental changes and process deviations, and improves the robustness of noise suppression performance.
Smart Images
Figure CN222509272U_ABST
Abstract
Description
Technical Field
[0001] The utility model relates to the technical field of amplifiers, in particular to an adaptive D-band CMOS ultra-low noise amplifier. Background Art
[0002] A lower receiver noise figure means better receiver sensitivity. In the receiver chain, the first amplifier, the low noise amplifier, plays an almost decisive role in the noise figure of the entire chain. Therefore, various solutions for reducing the noise figure of the first-stage amplifier have emerged one after another.
[0003] These methods of reducing noise figures are mainly divided into two methods: passive cancellation and active cancellation. Passive cancellation is to achieve noise cancellation and reduction by designing passive devices such as three-coil transformers, thereby reducing the noise figure, while active cancellation is to achieve equal amplitude and anti-phase cancellation of coherent noise by designing multiple amplifier channels, thereby achieving a lower noise figure.
[0004] It should be pointed out that in the context of CMOS technology, due to process limitations, it is more difficult to achieve a lower noise figure than GaAs or GaN. However, CMOS has attracted many circuit designers due to its advantages such as higher integration of digital-analog hybrid and low power consumption. Therefore, LNA design based on CMOS technology has always been a design challenge and research hotspot.
[0005] Compared with the passive cancellation method, the active cancellation method has a greater reduction in noise figure and is more flexible in structure.
[0006] The specific principle diagram of active cancellation is as follows: Figure 1 As shown in the figure, when the two coherent noises VN1 and VN2 have equal amplitudes and opposite phases at a certain circuit node, the noises will cancel each other out. In the whole process, the useful signal is not canceled out, so the noise factor can be greatly improved.
[0007] However, according to the currently available literature, existing active noise cancellation designs cannot achieve automatic cancellation, and the early design process requires a lot of simulation to consider the impact of process processing deviations and changes in the actual environment on its performance. This will lead to a longer design cycle, and simulation cannot fully cover all real-world situations, so there is a high risk of tape-out failure. Utility Model Content
[0008] Existing low-noise amplifiers cannot achieve automatic cancellation, have a long design cycle, and have a high risk of failure.
[0009] In view of the above problems, an adaptive D-band CMOS ultra-low noise amplifier is proposed. The noise of the received RF signal is adjusted in two ways, thereby generating two noises with equal amplitude and opposite phase, which can be offset. The noise detector arranged at the offset end can detect the amplitude and phase of the two noises respectively, thereby generating corresponding feedback signals, and adaptively controlling the adjustment without manual intervention. The circuit is enhanced in immunity to environmental changes and process deviations, making the noise suppression performance more robust.
[0010] An adaptive D-band CMOS ultra-low noise amplifier, comprising:
[0011] Receiver module;
[0012] A first regulating module;
[0013] A second adjustment module;
[0014] Offset module;
[0015] The first adjustment module and the second adjustment module are connected in parallel, and are used to adjust the noise of the received radio frequency signal according to the feedback signal, so as to obtain two paths of noise with equal amplitude and opposite phase;
[0016] The output end of the receiving module is connected to the input end of the first regulating module and the second regulating module, and the output end of the first regulating module and the second regulating module is connected to the input end of the offset module;
[0017] The cancellation module is used to cancel the two-way noise after adjustment, and output the feedback signal to the first adjustment module and the second adjustment module respectively for automatic adjustment control.
[0018] In conjunction with the adaptive D-band CMOS ultra-low noise amplifier described in the utility model, in a first possible implementation manner, the first adjustment module includes:
[0019] A first amplitude adjustment circuit;
[0020] a first phase adjustment circuit;
[0021] The output end of the first amplitude adjustment circuit is electrically connected to the input end of the first phase adjustment circuit;
[0022] The first amplitude adjustment circuit is used to adjust the amplitude of the noise signal according to the feedback signal;
[0023] The first phase adjustment circuit is used to adjust the phase of the noise signal according to the feedback signal.
[0024] In combination with the first possible implementation manner of the present utility model, in a second possible implementation manner, the second adjustment module includes:
[0025] a second amplitude adjustment circuit;
[0026] a second phase adjustment circuit;
[0027] The output end of the second amplitude adjustment circuit is electrically connected to the input end of the second phase adjustment circuit;
[0028] The second amplitude adjustment circuit is used to adjust the amplitude of the noise signal according to the feedback signal;
[0029] The second phase adjustment circuit is used to adjust the phase of the noise signal according to the feedback signal.
[0030] In combination with the second possible implementation of the utility model, in a third possible implementation, the
[0031] The offset module comprises:
[0032] Noise detector;
[0033] The noise detector is electrically connected to the first amplitude adjustment circuit, the first phase adjustment circuit, the second amplitude adjustment circuit, and the second phase adjustment circuit, respectively, and is used to detect the amplitude and phase of the two-way noise respectively, and generate corresponding feedback signals to the first amplitude adjustment circuit, the first phase adjustment circuit, the second amplitude adjustment circuit, and the second phase adjustment circuit.
[0034] In combination with the third possible implementation manner of the utility model, in a fourth possible implementation manner, the first amplitude adjustment circuit includes:
[0035] a first resistor;
[0036] The first MOS tube;
[0037] The first end of the first resistor and the output end of the receiving module are electrically connected to the noise detector;
[0038] The second end of the first resistor is electrically connected to the gate of the first MOS transistor.
[0039] In combination with the fourth possible implementation manner of the utility model, in a fifth possible implementation manner, the first phase adjustment circuit includes:
[0040] The second MOS tube;
[0041] The third MOS tube;
[0042] The second MOS tube is connected in parallel with the third MOS tube:
[0043] The gate of the second MOS tube is connected to the gate of the third MOS tube and then connected to the drain of the first MOS tube;
[0044] The drain of the second MOS tube is connected to the drain of the third MOS tube;
[0045] The source of the second MOS tube is electrically connected to the noise detector, and the source of the third MOS tube is grounded.
[0046] In combination with the fifth possible implementation manner of the utility model, in a sixth possible implementation manner, the second amplitude adjustment circuit includes:
[0047] a first capacitor;
[0048] The fourth MOS tube;
[0049] The first end of the first capacitor, the output end of the receiving module, and the source of the first MOS transistor are electrically connected;
[0050] The second end of the first capacitor is electrically connected to the gate of the fourth MOS tube; and the source of the fourth MOS tube is grounded.
[0051] In combination with the sixth possible implementation manner of the utility model, in a seventh possible implementation manner, the second phase adjustment circuit includes:
[0052] Fifth MOS tube;
[0053] The sixth MOS tube;
[0054] The fifth MOS tube is connected in parallel with the sixth MOS tube:
[0055] The gate of the fifth MOS tube is connected to the gate of the sixth MOS tube and then connected to the drain of the fourth MOS tube;
[0056] The drain of the fifth MOS tube is connected to the drain of the sixth MOS tube;
[0057] The source of the fifth MOS tube is connected to a power source, and the source of the sixth MOS tube is electrically connected to the noise detector and is grounded.
[0058] The adaptive D-band CMOS ultra-low noise amplifier described in the utility model is implemented, and the noise of the received radio frequency signal is adjusted by two paths, thereby generating two paths of noise with equal amplitude and opposite phase, so that the two paths of noise can be offset. The noise detector arranged at the offset end can detect the amplitude and phase of the two paths of noise respectively, thereby generating corresponding feedback signals, and adaptively controlling the adjustment without manual intervention, thereby enhancing the circuit's immunity to environmental changes and process deviations, and making the noise suppression performance more robust. BRIEF DESCRIPTION OF THE DRAWINGS
[0059] In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.
[0060] Figure 1 A first schematic diagram for connecting the adaptive D-band CMOS ultra-low noise amplifier module in the utility model;
[0061] Figure 2 A second schematic diagram for connecting the adaptive D-band CMOS ultra-low noise amplifier module in the utility model;
[0062] Figure 3 This is a schematic diagram of the adaptive D-band CMOS ultra-low noise amplifier circuit in the utility model. DETAILED DESCRIPTION
[0063] The following will be combined with the drawings in the utility model to clearly and completely describe the technical solution in the utility model. Obviously, the described embodiments are only part of the embodiments of the utility model, not all of the embodiments. Based on the embodiments in the utility model, other embodiments obtained by ordinary technicians in this field without creative work are all within the scope of protection of the utility model.
[0064] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as those commonly understood by those skilled in the art in the technical field of the present invention. The terms used herein in the specification of the present invention are only for the purpose of describing specific embodiments and are not intended to limit the present invention. The term "and / or" used herein includes any and all combinations of one or more related listed items.
[0065] It should be noted that when an element is referred to as being "fixed to" or "disposed on" another element, it can be directly on the other element or indirectly on the other element. When an element is referred to as being "connected to" another element, it can be directly connected to the other element or indirectly connected to the other element.
[0066] It should be understood that the orientation or position relationship indicated by terms such as "length", "width", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside" and "outside" are based on the orientation or position relationship shown in the drawings, and are only for the convenience of describing the present application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the present application.
[0067] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of the features. In the description of this application, the meaning of "plurality" is two or more, unless otherwise clearly and specifically defined.
[0068] Existing low-noise amplifiers cannot achieve automatic cancellation, have a long design cycle, and have a high risk of failure.
[0069] Aiming at the above problems, an adaptive D-band CMOS ultra-low noise amplifier is proposed.
[0070] like Figure 1 , Figure 1 The present invention is a first schematic diagram of the connection of an adaptive D-band CMOS ultra-low noise amplifier module in the utility model; an adaptive D-band CMOS ultra-low noise amplifier, comprising a receiving module 100, a first regulating module 210, a second regulating module 220 and a cancelling module 300; the first regulating module 210 and the second regulating module 220 are connected in parallel, and are used to adjust the noise of the received radio frequency signal according to the feedback signal, so as to obtain two-way noise with equal amplitude and opposite phase; the output end of the receiving module 100 is connected to the input end of the first regulating module 210 and the second regulating module 220, and the output end of the first regulating module 210 and the second regulating module 220 is connected to the input end of the cancelling module 300; the cancelling module 300 is used to cancel the adjusted two-way noise, and output feedback signals to the first regulating module 210 and the second regulating module 220, respectively, for automatic adjustment control. By adopting two paths to adjust the noise of the received RF signal, two paths of noise with equal amplitude and opposite phase are generated, so as to cancel each other out. The noise detector 310 arranged at the cancellation end can detect the amplitude and phase of the two paths of noise respectively, so as to generate corresponding feedback signals, and perform adaptive control on the adjustment without manual intervention, thereby enhancing the circuit's immunity to environmental changes and process deviations, and making the noise suppression performance more robust.
[0071] The CMOS ultra-low noise amplifier design for the D-band in this application can achieve an ultra-low noise figure design for the D-band (<1.5dB). The noise reduction method of the amplifier is based on the principle of active noise cancellation. Unlike the existing active cancellation schemes disclosed, the noise figure optimization of this invention is automatic and does not require human intervention.
[0072] In the present application, the design of a low noise amplifier can be completed quickly while obtaining ultra-low noise coefficient performance. In addition, based on the low noise coefficient amplifier, in the process of achieving ultra-low noise, the negative impact of environmental changes and process manufacturing deviations on functional performance can be offset to the maximum extent.
[0073] like Figure 1 As shown, the present application includes two noise adjustment paths, and each noise path includes an amplitude adjustment circuit and a phase adjustment circuit. There will be a noise detector 310 unit at the noise cancellation node. The RF signal received by the receiving module (antenna and input resistor) enters the two noise adjustment paths in two ways. The noise adjustment path will adjust and control the amplitude and phase of the noise, so that when the cancellation module 300 is used, the noise coefficients of the two paths can be equal in amplitude and opposite in phase, thereby achieving a better noise cancellation effect. Among them, the control signal of the amplitude and phase adjustment of the noise adjustment path is generated by feedback from the noise detector 310 unit in the cancellation module 300. The noise cancellation node will detect the noise amplitude and size, and accordingly generate appropriate amplitude and phase adjustment signals to achieve the best noise cancellation effect.
[0074] Furthermore, if Figure 2 , Figure 2 A second schematic diagram for connecting the adaptive D-band CMOS ultra-low noise amplifier module in the utility model; the first adjustment module 210 includes a first amplitude adjustment circuit 211 and a first phase adjustment circuit 212; the output end of the first amplitude adjustment circuit 211 is electrically connected to the input end of the first phase adjustment circuit 212; the first amplitude adjustment circuit 211 is used to adjust the amplitude of the noise signal according to the feedback signal; the first phase adjustment circuit 212 is used to adjust the phase of the noise signal according to the feedback signal.
[0075] Furthermore, the second adjustment module 220 includes a second amplitude adjustment circuit 221 and a second phase adjustment circuit 222; the output end of the second amplitude adjustment circuit 221 is electrically connected to the input end of the second phase adjustment circuit 222; the second amplitude adjustment circuit 221 is used to adjust the amplitude of the noise signal according to the feedback signal; the second phase adjustment circuit 222 is used to adjust the phase of the noise signal according to the feedback signal.
[0076] Furthermore, the cancellation module 300 includes a noise detector 310; the noise detector 310 is electrically connected to the first amplitude adjustment circuit 211, the first phase adjustment circuit 212, the second amplitude adjustment circuit 221, and the second phase adjustment circuit 222, respectively, for respectively detecting the amplitude and phase of the two-way noise, and generating corresponding feedback signals to the first amplitude adjustment circuit 211, the first phase adjustment circuit 212, the second amplitude adjustment circuit 221, and the second phase adjustment circuit 222.
[0077] Specifically, Figure 3 , Figure 3 The schematic diagram of the adaptive D-band CMOS ultra-low noise amplifier circuit in the utility model. The first amplitude adjustment circuit 211 includes a first resistor R1 and a first MOS tube Q1; the first end of the first resistor R1 and the output end of the receiving module 100 are electrically connected to the noise detector 310; the second end of the first resistor R1 is electrically connected to the gate of the first MOS tube Q1.
[0078] Specifically, Figure 3 The first phase adjustment circuit 212 includes a second MOS tube Q2 and a third MOS tube Q3; the second MOS tube Q2 and the third MOS tube Q3 are connected in parallel:
[0079] The gate of the second MOS transistor Q2 is connected to the gate of the third MOS transistor Q3 and then connected to the drain of the first MOS transistor Q1; the drain of the second MOS transistor Q2 is connected to the drain of the third MOS transistor Q3; the source of the second MOS transistor Q2 is electrically connected to the noise detector 310, and the source of the third MOS transistor Q3 is grounded.
[0080] Specifically, Figure 3 The second amplitude adjustment circuit 221 includes a first capacitor C and a fourth MOS tube Q4; the first end of the first capacitor C, the output end of the receiving module 100, and the source of the first MOS tube Q1 are electrically connected; the second end of the first capacitor C is electrically connected to the gate of the fourth MOS tube Q4; the source of the fourth MOS tube Q4 is grounded.
[0081] Specifically, Figure 3 , the second phase adjustment circuit 222 includes a fifth MOS transistor Q5 and a sixth MOS transistor Q6;
[0082] The fifth MOS tube Q5 and the sixth MOS tube Q6 are connected in parallel:
[0083] The gate of the fifth MOS transistor Q5 is connected to the gate of the sixth MOS transistor Q6 and then connected to the drain of the fourth MOS transistor Q4; the drain of the fifth MOS transistor Q5 is connected to the drain of the sixth MOS transistor Q6; the source of the fifth MOS transistor Q5 is connected to the power supply, and the source of the sixth MOS transistor Q6 is electrically connected to the noise detector 310 and grounded.
[0084] The adaptive D-band CMOS ultra-low noise amplifier of the utility model is implemented, and the noise of the received radio frequency signal is adjusted by two paths, thereby generating two paths of noise with equal amplitude and opposite phase, so that the two paths of noise can be offset. The noise detector arranged at the offset end can detect the amplitude and phase of the two paths of noise respectively, thereby generating corresponding feedback signals, and adaptively controlling the adjustment without manual intervention, thereby enhancing the circuit's immunity to environmental changes and process deviations, and making the noise suppression performance more robust.
[0085] The above are only preferred embodiments of the present invention and are not intended to limit the present invention. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present invention should be included in the protection scope of the present invention.
Claims
1. An adaptive D-band CMOS ultra-low noise amplifier, comprising: Receiver module; A first regulating module; A second adjustment module; Offset module; The first adjustment module and the second adjustment module are connected in parallel, and are used to adjust the noise of the received radio frequency signal according to the feedback signal, so as to obtain two paths of noise with equal amplitude and opposite phase; The output end of the receiving module is connected to the input end of the first regulating module and the second regulating module, and the output end of the first regulating module and the second regulating module is connected to the input end of the offset module; The cancellation module is used to cancel the two-way noise after adjustment, and output the feedback signal to the first adjustment module and the second adjustment module respectively for automatic adjustment control.
2. The adaptive D-band CMOS ultra-low noise amplifier according to claim 1, characterized in that: The first adjustment module includes: A first amplitude adjustment circuit; a first phase adjustment circuit; The output end of the first amplitude adjustment circuit is electrically connected to the input end of the first phase adjustment circuit; The first amplitude adjustment circuit is used to adjust the amplitude of the noise signal according to the feedback signal; The first phase adjustment circuit is used to adjust the phase of the noise signal according to the feedback signal.
3. The adaptive D-band CMOS ultra-low noise amplifier according to claim 2, characterized in that: The second adjustment module includes: a second amplitude adjustment circuit; a second phase adjustment circuit; The output end of the second amplitude adjustment circuit is electrically connected to the input end of the second phase adjustment circuit; The second amplitude adjustment circuit is used to adjust the amplitude of the noise signal according to the feedback signal; The second phase adjustment circuit is used to adjust the phase of the noise signal according to the feedback signal.
4. The adaptive D-band CMOS ultra-low noise amplifier according to claim 3, characterized in that: The offset module comprises: Noise detector; The noise detector is electrically connected to the first amplitude adjustment circuit, the first phase adjustment circuit, the second amplitude adjustment circuit, and the second phase adjustment circuit, respectively, and is used to detect the amplitude and phase of the two-way noise respectively, and generate corresponding feedback signals to the first amplitude adjustment circuit, the first phase adjustment circuit, the second amplitude adjustment circuit, and the second phase adjustment circuit.
5. The adaptive D-band CMOS ultra-low noise amplifier according to claim 4, characterized in that: The first amplitude adjustment circuit comprises: a first resistor; The first MOS tube; The first end of the first resistor and the output end of the receiving module are electrically connected to the noise detector; The second end of the first resistor is electrically connected to the gate of the first MOS transistor.
6. The adaptive D-band CMOS ultra-low noise amplifier according to claim 5, characterized in that: The first phase adjustment circuit comprises: The second MOS tube; The third MOS tube; The second MOS tube is connected in parallel with the third MOS tube: The gate of the second MOS tube is connected to the gate of the third MOS tube and then connected to the drain of the first MOS tube; The drain of the second MOS tube is connected to the drain of the third MOS tube; The source of the second MOS tube is electrically connected to the noise detector, and the source of the third MOS tube is grounded.
7. The adaptive D-band CMOS ultra-low noise amplifier according to claim 6, characterized in that: The second amplitude adjustment circuit comprises: a first capacitor; The fourth MOS tube; The first end of the first capacitor, the output end of the receiving module, and the source of the first MOS transistor are electrically connected; The second end of the first capacitor is electrically connected to the gate of the fourth MOS tube; and the source of the fourth MOS tube is grounded.
8. The adaptive D-band CMOS ultra-low noise amplifier according to claim 7, characterized in that: The second phase adjustment circuit comprises: Fifth MOS tube; The sixth MOS tube; The fifth MOS tube is connected in parallel with the sixth MOS tube: The gate of the fifth MOS tube is connected to the gate of the sixth MOS tube and then connected to the drain of the fourth MOS tube; The drain of the fifth MOS tube is connected to the drain of the sixth MOS tube; The source of the fifth MOS tube is connected to a power source, and the source of the sixth MOS tube is electrically connected to the noise detector and is grounded.