Battery piece with compound transparent conducting layer structure
By introducing a metal layer into the duplex structure of the transparent conductive layer, the problem of increasing costs and relying on precious metals in the traditional method is solved, and the effects of high conductivity and low cost are achieved.
Patent Information
- Application Number
- CN202420201230.3
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-01-26
- Publication Date
- 2025-02-18
- Estimated Expiration
- 2034-01-26
AI Technical Summary
The existing transparent conductive layer increases costs when improving conductivity, and the traditional method adds precious metal indium (In) to improve conductivity, resulting in high manufacturing costs.
The complex transparent conductive layer structure is adopted, consisting of a first transparent conductive layer, a metal layer and a second transparent conductive layer, and a metal layer is provided between the two transparent conductive layers to improve the conductivity.
The use of precious metal indium (In) in the transparent conductive layer is reduced, and even the use of indium is not required, which achieves ideal conductivity, while reducing the thickness and usage of the overall TCO layer, and reducing production costs.
Smart Images
Figure CN222509901U_ABST
Abstract
Description
Technical Field
[0001] The utility model relates to the technical field of manufacturing crystalline silicon solar cell sheets, in particular to a cell sheet with a compound transparent conductive layer structure. Background Art
[0002] Improving efficiency and reducing costs have always been the goal that the photovoltaic cell industry continues to pursue. Among them, how to improve the lateral and longitudinal conductivity of the cell is one of the hot directions. Industry experts from all walks of life have always focused on how to improve the conductivity of silver paste. But as we all know, the cost of silver paste has also remained high due to the continuous development of the new energy industry and other electronic industries, and the ceiling of silver's ability to improve conductivity has long been reached. Therefore, people in the industry are all focused on thinking about whether there are other ways to improve efficiency and reduce costs.
[0003] The improvement of the conductivity of the cell is not only on the surface (silver paste, visible to the naked eye). In fact, it includes the improvement of the conductivity in the horizontal and vertical directions. In the horizontal direction, and the surface conductivity through the transparent conductive layer (commonly known as TCO), the electrons and holes generated by the photoelectric conversion in the silicon wafer (pn junction) are first conducted to the transparent conductive layer (horizontally), and then collected by each metal grid line (vertically). Therefore, if the conductivity in the horizontal and vertical directions is to be improved, first of all, the transparent conductive layer must be improved. Generally, the thickness of the single transparent conductive layer is increased or it is doped with different metal contents. Although high conductivity is obtained, the transmittance is sacrificed, and the difficulty of making the target material increases, which also increases the production cost. Finally, because the thickness of the existing TCO conductive layer is ~100nm, indium (commonly known as ITO doped tin indium oxide, Indium Tin Oxides) is generally added for higher conductivity. Indium is also one of the expensive materials. How to reduce the cost and improve the conductivity of the TCO conductive layer is still a problem to be solved. Utility Model Content
[0004] In order to overcome the above disadvantages, the purpose of the present invention is to provide a cell with a composite transparent conductive layer structure to replace the existing single expensive transparent conductive layer whose conductivity needs to be improved.
[0005] In order to achieve the above purpose, the technical solution adopted by the utility model is: a battery cell with a composite transparent conductive layer structure, comprising:
[0006] Battery cell substrate;
[0007] A first transparent conductive layer, wherein the first transparent conductive layer is disposed on the battery cell substrate;
[0008] A metal layer, the metal layer being arranged on a side of the first transparent conductive layer away from the battery cell substrate;
[0009] A second transparent conductive layer is disposed on a side of the metal layer away from the first transparent conductive layer.
[0010] In the present application, a metal layer is provided between the first transparent conductive layer and the second transparent conductive layer, so that the conductivity of the composite transparent conductive layer can be increased.
[0011] Furthermore, the first transparent conductive layer, the metal layer and the second transparent conductive layer are sequentially disposed on two side surfaces of the cell substrate in the thickness direction.
[0012] Further, the thickness of the first transparent conductive layer is 10-40 nm. Exemplarily, the thickness of the first transparent conductive layer is 10 nm, 15 nm, 20 nm, 25 nm, 30 nm, 35 nm, or 40 nm.
[0013] Further, the thickness of the metal layer is 5-30 nm. Exemplarily, the thickness of the metal layer is 5 nm, 10 nm, 15 nm, 20 nm, 25 nm, or 30 nm.
[0014] Further, the thickness of the second transparent conductive layer is 10-50 nm. Exemplarily, the thickness of the second transparent conductive layer is 10 nm, 15 nm, 20 nm, 25 nm, 30 nm, 35 nm, 40 nm, 45 nm, or 50 nm.
[0015] Further, the material of the metal layer is a single metal or a composite metal alloy. Further, the material of the metal layer is selected from any one of gold, silver, platinum, copper, palladium, titanium, nickel, tungsten, bismuth, vanadium, gallium, rhodium, magnesium, chromium, and tin.
[0016] Furthermore, the first transparent conductive layer and / or the second transparent conductive layer is a single-layer structure or a multi-layer structure. The first transparent conductive layer can be a single-layer structure with only one layer, or a multi-layer structure with 2 layers, 3 layers, 4 layers, etc. The second transparent conductive layer can be a single-layer structure with only one layer, or a multi-layer structure with 2 layers, 3 layers, 4 layers, etc.
[0017] Furthermore, the metal layer is a single-layer structure or a multi-layer structure. The metal layer can be a single-layer structure with only one layer, or a multi-layer structure with 2 layers, 3 layers, 4 layers, etc.
[0018] Furthermore, a doping layer is provided between the cell substrate and the first transparent conductive layer.
[0019] The beneficial effects of the utility model are:
[0020] The present application can increase the conductivity of the compound transparent conductive layer by setting a metal layer between the first transparent conductive layer and the second transparent conductive layer. In the traditional process, in order to achieve higher conductivity, indium (commonly known as ITO-doped tin-doped indium oxide, Indium Tin Oxides) is generally added to the transparent conductive layer, and indium is also one of the expensive materials, which increases the manufacturing cost of the transparent conductive layer. Due to the setting of the metal layer, the conductivity of the transparent conductive layer increased by the metal layer in the present application can reduce the use of the precious metal indium In in the transparent conductive layer, and even the use of metal indium In can achieve the ideal conductivity. At the same time, by increasing the conductivity of the compound transparent conductive layer by adding a metal layer instead of the traditional method of increasing the thickness of a single transparent conductive layer, the thickness and usage of the overall TCO can be reduced. BRIEF DESCRIPTION OF THE DRAWINGS
[0021] The drawings constituting a part of the present application are used to provide a further understanding of the present invention. The illustrative embodiments of the present invention and the description thereof are used to explain the present invention and do not constitute an improper limitation on the present invention.
[0022] In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.
[0023] Figure 1 It is a schematic diagram of a cell with a composite transparent conductive layer structure according to an embodiment of the present invention.
[0024] In the figure: 1, battery cell substrate; 2, doping layer; 3, compound transparent conductive layer; 31, first transparent conductive layer; 32, metal layer; 33, second transparent conductive layer. DETAILED DESCRIPTION
[0025] In order to make the above-mentioned purposes, features and advantages of the utility model more obvious and easy to understand, the specific implementation methods of the utility model are described in detail below in conjunction with the accompanying drawings. In the following description, many specific details are set forth to facilitate a full understanding of the utility model. However, the utility model can be implemented in many other ways different from those described herein, and those skilled in the art can make similar improvements without violating the connotation of the utility model, so the utility model is not limited by the specific embodiments disclosed below.
[0026] In addition, the term "and / or" in this article is only a description of the association relationship of associated objects, indicating that there can be three relationships. For example, A and / or B can represent: A exists alone, A and B exist at the same time, and B exists alone. In addition, the character " / " in this article, unless otherwise specified, generally means that the associated objects before and after are in an "or" relationship.
[0027] See attached Figure 1 As shown, a cell with a compound transparent conductive layer structure in this embodiment includes a cell substrate 1 and a compound transparent conductive layer 3, the compound transparent conductive layer 3 includes a first transparent conductive layer 31, a metal layer 32 and a second transparent conductive layer 33 connected in sequence, and a doping layer 2 (pn junction) is made on at least one side of the cell substrate 1; a cell on which the doping layer 2 (pn junction) has been completed is introduced into a PVD device, and a TCO1 layer is deposited on it with a deposition power of 200-600W, and a first transparent conductive layer 31 is prepared on a side of the doping layer 2 away from the cell substrate 1, the first transparent conductive layer 31 is a single-layer structure after one TCO1 layer deposition, and can also be a multi-layer structure after multiple TCO1 layer depositions, and the thickness of the first transparent conductive layer 31 is 10-40nm.
[0028] In some embodiments, a metal layer 32 is prepared on the side of the first transparent conductive layer 31 away from the cell substrate 1, specifically, the cell with the first transparent conductive layer 31 is introduced into a PVD device for deposition of the metal layer 32, the deposition power is 100-500W, the metal layer 32 is a single-layer structure after one metal deposition, or a multi-layer structure after multiple metal depositions, and the thickness of the metal layer 32 is 5-30nm. The material of the metal layer 32 is a single metal or a composite metal alloy, and the single metal is selected from any one of gold, silver, platinum, copper, palladium, titanium, nickel, tungsten, bismuth, vanadium, gallium, rhodium, magnesium, chromium, and tin.
[0029] In some embodiments, a second transparent conductive layer 33 is prepared on a side of the metal layer 32 away from the first transparent conductive layer 31. Specifically, the cell on which the metal layer 32 has been deposited is introduced into a PVD device for TCO2 layer deposition. The deposition power is 200-800W. The second transparent conductive layer 33 is prepared on a side of the metal layer 32 away from the first transparent conductive layer 31. The second transparent conductive layer 33 is a single-layer structure after one TCO2 layer deposition, or a multi-layer structure after multiple TCO2 layer depositions. The thickness of the second transparent conductive layer 33 is 10-50nm.
[0030] The present application can increase the conductivity of the compound transparent conductive layer 3 by setting a metal layer 32 between the first transparent conductive layer 31 and the second transparent conductive layer 33. In the traditional process, in order to achieve higher conductivity, indium (commonly known as ITO-doped tin indium oxide, Indium Tin Oxides) is generally added to the transparent conductive layer, and indium is also one of the expensive materials, which increases the manufacturing cost of the transparent conductive layer. In the present application, due to the setting of the metal layer 32, the conductivity of the transparent conductive layer 3 is improved by the metal layer 32, so the use of the precious metal indium In in the transparent conductive layer 3 can be reduced, and even the use of metal indium In can achieve the ideal conductivity. At the same time, by increasing the conductivity of the compound transparent conductive layer 3 by adding the metal layer 32 instead of the traditional method of increasing the thickness of the single transparent conductive layer 3, the thickness and usage of the overall TCO can be reduced.
[0031] Example 1
[0032] S1. After the doping layer 2 (p+) is prepared on the double-sided cell substrate 1, the first transparent conductive layer 31 is prepared by PVD deposition. The material of the first transparent conductive layer 31 is specifically an ITO layer with a ratio of 90:10, specifically 90% indium oxide and 10% tin oxide. The applied power is ~300W, and the deposition thickness is ~20nm, that is, the thickness of the first transparent conductive layer 31 is 20nm.
[0033] Alternatively, the first transparent conductive layer 31 is prepared by PVD deposition on the doped layer 2 (n+) of the double-sided heterojunction cell substrate. The material of the first transparent conductive layer 31 is specifically a 90:10 ratio AZO layer, AZO is ZnO doped with Al2O3, the weight ratio of ZnO to Al2O3 is 90:10, and the applied power is ~300 W. The deposition thickness is ~30 nm, that is, the thickness of the first transparent conductive layer 31 is 20 nm.
[0034] S2. On the double-sided cell, a metal silver layer is prepared by PVD deposition with a power of ~200 W and a deposition thickness of ~10 nm, that is, the thickness of the metal layer 32 is 10 nm.
[0035] S3. On the doping layer 2 (p+) of the double-sided cell substrate, a corresponding second transparent conductive layer 33 is prepared by PVD deposition. The material of the second transparent conductive layer 33 is specifically a tin oxide SnOx layer, and the power is ~200W. The corresponding second transparent conductive layer 33 is prepared, and the deposition thickness is ~30nm, that is, the thickness of the second transparent conductive layer 33 is 30nm.
[0036] Alternatively, on the doping layer 2 (n+) of the double-sided heterojunction cell substrate, a second transparent conductive layer 33 is prepared by PVD deposition. The material of the second transparent conductive layer 33 is specifically a 982 AZO layer, AZO is ZnO doped with Al2O3, the weight ratio of ZnO to Al2O3 is 98:2, the power is ~300W, and the corresponding second transparent conductive layer 33 is prepared. Its deposition thickness is ~30nm, that is, the thickness of the second transparent conductive layer 33 is 30nm.
[0037] The transparent conductive layer 3 prepared in this embodiment has a thickness of 60nm (20+10+30). Compared with the conventional transparent conductive layer 3 having a thickness of 100nm, the transparent conductive layer 3 prepared in this application is thinner, which reduces the thickness and usage of the overall TCO. In addition, the transparent conductive layer 3 prepared in this embodiment does not contain precious metal In, which reduces the production cost of the conductive layer.
[0038] In the description of the present invention, it should be understood that the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Therefore, a feature defined as "first" or "second" may explicitly or implicitly include at least one of the features. In the description of the present invention, "plurality" means at least two, such as two, three, etc., unless otherwise clearly and specifically defined.
[0039] The above implementation modes are only for illustrating the technical concept and features of the utility model, and their purpose is to allow people familiar with this technology to understand the content of the utility model and implement it. It cannot be used to limit the protection scope of the utility model. Any equivalent changes or modifications made according to the spirit of the utility model should be included in the protection scope of the utility model.
Claims
1. A cell having a composite transparent conductive layer structure, characterized in that: include: Battery cell substrate (1); A first transparent conductive layer (31), wherein the first transparent conductive layer (31) is arranged on the cell substrate (1); A metal layer (32), the metal layer (32) being arranged on a side of the first transparent conductive layer (31) away from the cell substrate (1); a second transparent conductive layer (33), the second transparent conductive layer (33) being arranged on a side of the metal layer (32) away from the first transparent conductive layer (31); The thickness of the metal layer (32) is 5-30 nm.
2. The cell with a composite transparent conductive layer structure according to claim 1, characterized in that: The first transparent conductive layer (31), the metal layer (32) and the second transparent conductive layer (33) are sequentially arranged on two side surfaces of the cell substrate (1) in the thickness direction.
3. The cell with a composite transparent conductive layer structure according to claim 1, characterized in that: The thickness of the first transparent conductive layer (31) is 10-40 nm.
4. The cell with a composite transparent conductive layer structure according to claim 1, characterized in that: The thickness of the second transparent conductive layer (33) is 10-50 nm.
5. The cell with a composite transparent conductive layer structure according to claim 1, characterized in that: The material of the metal layer (32) is a single metal or a composite metal alloy.
6. The cell with a composite transparent conductive layer structure according to claim 1, characterized in that: The material of the metal layer (32) is selected from any one of gold, silver, platinum, copper, palladium, titanium, nickel, tungsten, bismuth, vanadium, gallium, rhodium, magnesium, chromium and tin.
7. The cell with a composite transparent conductive layer structure according to claim 1, characterized in that: The first transparent conductive layer (31) and / or the second transparent conductive layer (33) is a single-layer structure or a multi-layer structure.
8. The cell with a composite transparent conductive layer structure according to claim 1, characterized in that: The metal layer (32) is a single-layer structure or a multi-layer structure.
9. A cell with a composite transparent conductive layer structure according to any one of claims 1 to 8, characterized in that: A doping layer (2) is provided between the cell substrate (1) and the first transparent conductive layer (31).